Tunable resonator and method of manufacturing the same
阅读说明:本技术 可调式谐振器及其制造方法 (Tunable resonator and method of manufacturing the same ) 是由 吴明 唐兆云 赖志国 杨清华 王家友 于 2020-07-24 设计创作,主要内容包括:一种可调式谐振器及其制造方法,谐振器包括:谐振腔,在衬底中,至少包括中心的第一谐振腔和外围的第二谐振腔;第一堆叠结构,在第一谐振腔上,依次包括下电极第一部分、压电层第一部分和上电极第一部分;第二堆叠结构,在第二谐振腔上,依次包括下电极第二部分、压电层第二部分和上电极第二部分;第一绝缘层,在衬底上,位于下电极第一部分和下电极第二部分之间。依照本发明的可调式谐振器及其制造方法,在主谐振器外围增设副谐振器以主动地调节谐振状态,有利于提高器件集成度和效率。(A tunable resonator and a method of manufacturing the same, the resonator comprising: the resonant cavity is arranged in the substrate and at least comprises a first central resonant cavity and a second peripheral resonant cavity; the first stacked structure is arranged on the first resonant cavity and sequentially comprises a first lower electrode part, a first piezoelectric layer part and a first upper electrode part; the second stacked structure is arranged on the second resonant cavity and sequentially comprises a second lower electrode part, a second piezoelectric layer part and a second upper electrode part; a first insulating layer on the substrate between the first portion of the lower electrode and the second portion of the lower electrode. According to the adjustable resonator and the manufacturing method thereof, the auxiliary resonator is additionally arranged on the periphery of the main resonator to actively adjust the resonance state, so that the integration level and the efficiency of the device are improved.)
1. A tunable resonator, comprising:
the resonant cavity is arranged in the substrate and at least comprises a first central resonant cavity and a second peripheral resonant cavity;
the first stacked structure is arranged on the first resonant cavity and sequentially comprises a first lower electrode part, a first piezoelectric layer part and a first upper electrode part;
the second stacked structure is arranged on the second resonant cavity and sequentially comprises a second lower electrode part, a second piezoelectric layer part and a second upper electrode part;
a first insulating layer on the substrate between the first portion of the lower electrode and the second portion of the lower electrode.
2. The resonator ofclaim 1 further comprising a second insulating layer on the first portion ofthe piezoelectric layer and the second portion ofthe piezoelectric layer between the first portion ofthe upper electrode and the second portion ofthe upper electrode; preferably, the first portion of the piezoelectric layer and the second portion of the piezoelectric layer are connected or spaced apart by a second insulating layer.
3. The tunable resonator according to claim 1, wherein the first resonant cavity, the lower electrode first portion, the upper electrode first portion are polygonal, circular or elliptical in plan view; preferably, the size of the top of the first resonant cavity is larger than the size of the first part of the lower electrode or the first part of the upper electrode, and optionally, the size of the top of the second resonant cavity is larger than the size of the second part of the lower electrode or the second part of the upper electrode; preferably, the first portion of the lower electrode is edge aligned with the first portion of the upper electrode, and the second portion of the lower electrode is edge aligned with the second portion of the upper electrode.
4. The tunable resonator of claim 1, wherein a different signal is applied to the second stacked structure than the first stacked structure to adjust a resonance state of the resonator, the resonance state comprising at least one of amplitude, frequency, phase, or a combination thereof.
5. The tunable resonator according to any one of claims 1 to 4, wherein the substrate material is Si, SOI, Ge, GeOI, compound semiconductor; optionally, the materials of the first and second parts of the piezoelectric layer are ZnO, AlN, BST (barium strontium titanate), BT (barium titanate), PZT (lead zirconate titanate), PBLN (lead barium lithium niobate), PT (lead titanate), further preferably the piezoelectric material is doped with rare earth elements; optionally, the material of the first or second insulating layer is a nitride, such as silicon nitride, silicon oxynitride, aluminum nitride, boron nitride; optionally, the material of any one of the lower electrode first portion, the lower electrode second portion, the upper electrode first portion, and the upper electrode second portion is a simple metal or a metal alloy selected from Mo, W, Ru, Al, Cu, Ti, Ta, In, Zn, Zr, Fe, Mg, or a conductive oxide or a conductive nitride of these metals, and any combination of the above materials.
6. A tunable resonator manufacturing method, comprising:
forming a sacrificial layer in the substrate, wherein the sacrificial layer comprises a first sacrificial layer pattern in the center and a second sacrificial layer pattern on the periphery;
forming a lower electrode layer on the sacrificial layer, including a lower electrode first portion on the first sacrificial layer pattern and a lower electrode second portion on the second sacrificial layer pattern;
forming a first insulating layer between the lower electrode first portion and the lower electrode second portion;
forming a piezoelectric layer on the first insulating layer and the lower electrode layer, including at least a first portion of the piezoelectric layer over the first sacrificial layer pattern and a second portion of the piezoelectric layer over the second sacrificial layer pattern;
forming an upper electrode layer on the piezoelectric layer, including an upper electrode first portion on the piezoelectric layer first portion and an upper electrode second portion on the piezoelectric layer second portion;
the sacrificial layer is removed, leaving a resonant cavity in the substrate, including a central first resonant cavity and a peripheral second resonant cavity.
7. The tunable resonator manufacturing method according to claim 6, further comprising, after forming the upper electrode layer, forming a second insulating layer at least between the first portion of the upper electrode and the second portion of the upper electrode; preferably, the first portion of the piezoelectric layer and the second portion of the piezoelectric layer are connected or spaced apart by a second insulating layer.
8. The tunable resonator manufacturing method according to claim 6, wherein the first resonant cavity, the lower electrode first portion, and the upper electrode first portion are polygonal, circular, or elliptical in plan view; preferably, the size of the top of the first resonant cavity is larger than the size of the first part of the lower electrode or the first part of the upper electrode, and optionally, the size of the top of the second resonant cavity is larger than the size of the second part of the lower electrode or the second part of the upper electrode; preferably, the first portion of the lower electrode is edge aligned with the first portion of the upper electrode, and the second portion of the lower electrode is edge aligned with the second portion of the upper electrode.
9. The tunable resonator fabricating method according to claim 6, wherein the substrate material is Si, SOI, Ge, GeOI, compound semiconductor; optionally, the materials of the first and second parts of the piezoelectric layer are ZnO, AlN, BST (barium strontium titanate), BT (barium titanate), PZT (lead zirconate titanate), PBLN (lead barium lithium niobate), PT (lead titanate), further preferably the piezoelectric material is doped with rare earth elements; optionally, the material of the first or second insulating layer is a nitride, such as silicon nitride, silicon oxynitride, aluminum nitride, boron nitride; optionally, the material of any one of the lower electrode first portion, the lower electrode second portion, the upper electrode first portion, and the upper electrode second portion is a simple metal or a metal alloy selected from Mo, W, Ru, Al, Cu, Ti, Ta, In, Zn, Zr, Fe, Mg, or a conductive oxide or a conductive nitride of these metals, and any combination of the above materials; optionally, the sacrificial layer material is an oxide, such as boron doped silicon oxide (BSG), phosphorous doped silicon oxide (PSG), undoped silicon oxide (USG), porous silicon oxide.
10. The tunable resonator manufacturing method according to claim 7, further comprising, after forming the upper electrode layer and before removing the sacrificial layer, etching the piezoelectric layer between the first portion of the upper electrode and the second portion of the upper electrode to form an opening exposing the substrate, and forming a second insulating layer on the upper electrode layer and on a bottom and a sidewall of the opening.
Technical Field
The present invention relates to tunable resonators and methods for fabricating the same, and more particularly, to a tunable resonator and a method for fabricating the same.
Background
In wireless communication, the rf filter is used as an intermediary for filtering signals with specific frequencies, and is used to reduce signal interference in different frequency bands, and to implement functions such as image cancellation, spurious filtering, and channel selection in the wireless transceiver. With the deployment of 4GLTE networks and the growth of the market, the design of the radio frequency front end is developing towards miniaturization, low power consumption and integration, and the market has higher and higher requirements on filtering performance. Because the film bulk acoustic resonator (FBAR, also called bulk acoustic wave, or "BAW") has the characteristics of small size, high working frequency, low power consumption, high quality factor (Q value), direct output of frequency signals, compatibility with CMOS process, etc., it has become an important device in the field of radio frequency communication and is widely used at present.
FBAR is a thin film device with a sandwich structure of electrodes-piezoelectric film-electrodes fabricated on a substrate material. The FBAR has a structure of a cavity type, a bragg reflection type (SMR), and a back surface etching type. The Q value of the cavity type FBAR is higher than that of the SMR type FBAR, the loss is small, and the electromechanical coupling coefficient is high; compared with the back etching FBAR, the back etching FBAR does not need to remove a large-area substrate, and has higher mechanical strength. Therefore, the cavity FBAR is the first choice for integration in CMOS devices.
Conventionally, after the resonant cavity is prepared in the substrate, the resonant frequency of the device is determined accordingly. When it is necessary to apply to different frequencies or a wide range of frequency bands, in order to improve the filtering accuracy, a large number of resonant cavities of different sizes must be made on the same substrate, which unnecessarily increases the size of the system, and the system utilization is low when some resonators are operated while most other resonators are in an idle state.
Disclosure of Invention
It is therefore an object of the present invention to provide a tunable resonator and a method for manufacturing the same that overcomes the above technical obstacles.
The invention provides an adjustable resonator, comprising:
the resonant cavity is arranged in the substrate and at least comprises a first central resonant cavity and a second peripheral resonant cavity;
the first stacked structure is arranged on the first resonant cavity and sequentially comprises a first lower electrode part, a first piezoelectric layer part and a first upper electrode part;
the second stacked structure is arranged on the second resonant cavity and sequentially comprises a second lower electrode part, a second piezoelectric layer part and a second upper electrode part;
a first insulating layer on the substrate between the first portion of the lower electrode and the second portion of the lower electrode.
Further comprising a second insulating layer on the first portion of the piezoelectric layer and the second portion of the piezoelectric layer between the first portion of the upper electrode and the second portion of the upper electrode; preferably, the first portion of the piezoelectric layer and the second portion of the piezoelectric layer are connected or spaced apart by a second insulating layer.
The first resonant cavity, the first part of the lower electrode and the first part of the upper electrode are polygonal, circular or elliptical in plan view; preferably, the size of the top of the first resonant cavity is larger than the size of the first part of the lower electrode or the first part of the upper electrode, and optionally, the size of the top of the second resonant cavity is larger than the size of the second part of the lower electrode or the second part of the upper electrode; preferably, the first portion of the lower electrode is edge aligned with the first portion of the upper electrode, and the second portion of the lower electrode is edge aligned with the second portion of the upper electrode.
Wherein a different signal is applied to the second stacked structure than the first stacked structure to adjust a resonance state of the resonator, the resonance state including at least one of an amplitude, a frequency, a phase, or a combination thereof.
Wherein the substrate material is Si, SOI, Ge, GeOI, compound semiconductor; optionally, the materials of the first and second parts of the piezoelectric layer are ZnO, AlN, BST (barium strontium titanate), BT (barium titanate), PZT (lead zirconate titanate), PBLN (lead barium lithium niobate), PT (lead titanate), further preferably the piezoelectric material is doped with rare earth elements; optionally, the material of the first or second insulating layer is a nitride, such as silicon nitride, silicon oxynitride, aluminum nitride, boron nitride; optionally, the material of any one of the lower electrode first portion, the lower electrode second portion, the upper electrode first portion, and the upper electrode second portion is a simple metal or a metal alloy selected from Mo, W, Ru, Al, Cu, Ti, Ta, In, Zn, Zr, Fe, Mg, or a conductive oxide or a conductive nitride of these metals, and any combination of the above materials.
The invention also provides a manufacturing method of the adjustable resonator, which comprises the following steps:
forming a sacrificial layer in the substrate, wherein the sacrificial layer comprises a first sacrificial layer pattern in the center and a second sacrificial layer pattern on the periphery;
forming a lower electrode layer on the sacrificial layer, including a lower electrode first portion on the first sacrificial layer pattern and a lower electrode second portion on the second sacrificial layer pattern;
forming a first insulating layer between the lower electrode first portion and the lower electrode second portion;
forming a piezoelectric layer on the first insulating layer and the lower electrode layer, including at least a first portion of the piezoelectric layer over the first sacrificial layer pattern and a second portion of the piezoelectric layer over the second sacrificial layer pattern;
forming an upper electrode layer on the piezoelectric layer, including an upper electrode first portion on the piezoelectric layer first portion and an upper electrode second portion on the piezoelectric layer second portion;
the sacrificial layer is removed, leaving a resonant cavity in the substrate, including a central first resonant cavity and a peripheral second resonant cavity.
Forming the upper electrode layer further includes, at least, forming a second insulating layer between the upper electrode first portion and the upper electrode second portion; preferably, the first portion of the piezoelectric layer and the second portion of the piezoelectric layer are connected or spaced apart by a second insulating layer.
The first resonant cavity, the first part of the lower electrode and the first part of the upper electrode are polygonal, circular or elliptical in plan view; preferably, the size of the top of the first resonant cavity is larger than the size of the first part of the lower electrode or the first part of the upper electrode, and optionally, the size of the top of the second resonant cavity is larger than the size of the second part of the lower electrode or the second part of the upper electrode; preferably, the first portion of the lower electrode is edge aligned with the first portion of the upper electrode, and the second portion of the lower electrode is edge aligned with the second portion of the upper electrode.
Wherein the substrate material is Si, SOI, Ge, GeOI, compound semiconductor; optionally, the materials of the first and second parts of the piezoelectric layer are ZnO, AlN, BST (barium strontium titanate), BT (barium titanate), PZT (lead zirconate titanate), PBLN (lead barium lithium niobate), PT (lead titanate), further preferably the piezoelectric material is doped with rare earth elements; optionally, the material of the first or second insulating layer is a nitride, such as silicon nitride, silicon oxynitride, aluminum nitride, boron nitride; optionally, the material of any one of the lower electrode first portion, the lower electrode second portion, the upper electrode first portion, and the upper electrode second portion is a simple metal or a metal alloy selected from Mo, W, Ru, Al, Cu, Ti, Ta, In, Zn, Zr, Fe, Mg, or a conductive oxide or a conductive nitride of these metals, and any combination of the above materials; optionally, the sacrificial layer material is an oxide, such as boron doped silicon oxide (BSG), phosphorous doped silicon oxide (PSG), undoped silicon oxide (USG), porous silicon oxide.
After forming the upper electrode layer and before removing the sacrificial layer, etching the piezoelectric layer between the first part of the upper electrode and the second part of the upper electrode to form an opening exposing the substrate, and forming a second insulating layer on the upper electrode layer and on the bottom and the side wall of the opening.
According to the adjustable resonator and the manufacturing method thereof, the auxiliary resonator is additionally arranged on the periphery of the main resonator to actively adjust the resonance state, so that the integration level and the efficiency of the device are improved.
The stated objects of the invention, as well as other objects not listed here, are met within the scope of the independent claims of the present application. Embodiments of the invention are defined in the independent claims, with specific features being defined in the dependent claims.
Drawings
The technical solution of the present invention is explained in detail below with reference to the accompanying drawings, in which:
FIG. 1 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention;
FIG. 2 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention;
FIG. 3 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention;
FIG. 4 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention;
FIG. 5 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention;
FIG. 6 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention;
FIG. 7 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention;
FIG. 8 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention;
FIG. 9 shows a cross-sectional view of a resonator fabrication process according to an embodiment of the present invention; and
figure 10 shows a plan view of a resonator top electrode in accordance with an embodiment of the present invention.
Detailed Description
The features and technical effects of the technical scheme of the invention are described in detail below with reference to the accompanying drawings and in combination with exemplary embodiments, and a resonator and a manufacturing method thereof are disclosed, which are beneficial to improving the integration level and efficiency of devices. It is noted that like reference numerals refer to like structures and that the terms "first", "second", "upper", "lower", and the like as used herein may be used to modify various device structures. These modifications do not imply a spatial, sequential, or hierarchical relationship to the structures of the modified devices unless specifically stated.
As shown in fig. 1, a sacrificial layer 2 is formed in a
As shown in fig. 2, a patterned lower electrode 3 is formed on a
As shown in fig. 3, an insulating
As shown in fig. 4, a
As shown in fig. 5, the conductive material layer 6 is patterned to form an upper electrode
As shown in fig. 6, a second
As shown in fig. 7, the sacrificial layer pattern 2 is removed, leaving a resonant cavity in the
As shown in fig. 8, the second insulating
In another preferred embodiment of the present invention, as shown in fig. 9, the
According to the adjustable resonator and the manufacturing method thereof, the auxiliary resonator is additionally arranged on the periphery of the main resonator to actively adjust the resonance state, so that the integration level and the efficiency of the device are improved.
While the invention has been described with reference to one or more exemplary embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the disclosure without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the disclosed device structure and its method of manufacture will include all embodiments falling within the scope of the present invention.
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