Magnetic field sensing device
阅读说明:本技术 磁场感测装置 (Magnetic field sensing device ) 是由 袁辅德 于 2020-03-17 设计创作,主要内容包括:本发明提供一种磁场感测装置,包括多个第一磁电阻单元、多个第二磁电阻单元、一第一测试导线、一第二测试导线及一驱动器。这些第一磁电阻单元沿着一第一方向排列。这些第二磁电阻单元沿着第一方向排列,且这些第二磁电阻单元配置于这些第一磁电阻单元于一第二方向上的一侧。第一测试导线配置于这些第一磁电阻单元于一第三方向上的一侧,且沿着第一方向延伸。第二测试导线配置于这些第二磁电阻单元于第三方向上的一侧,且沿着第一方向延伸。驱动器用以在不同的时间分别使两同向电流及两反向电流流经第一测试导线与第二测试导线。此磁场感测装置能够内建自我测试的功能。(The invention provides a magnetic field sensing device, which comprises a plurality of first magneto-resistance units, a plurality of second magneto-resistance units, a first test lead, a second test lead and a driver. The first magnetoresistive cells are arranged along a first direction. The second magnetoresistive units are arranged along the first direction and are configured at one side of the first magnetoresistive units in a second direction. The first test wires are arranged on one side of the first magneto-resistance units in a third direction and extend along the first direction. The second test wires are arranged on one side of the second magneto-resistance units in the third direction and extend along the first direction. The driver is used for enabling two same-direction currents and two reverse-direction currents to flow through the first test conducting wire and the second test conducting wire respectively at different time. The magnetic field sensing device can be built in with a self-test function.)
1. A magnetic field sensing device, comprising:
the first magnetoresistive units are arranged along a first direction, wherein the sensing direction of each first magnetoresistive unit is perpendicular to the first direction;
a plurality of second magnetoresistive units arranged along the first direction, wherein the sensing direction of each second magnetoresistive unit is perpendicular to the first direction, and the plurality of second magnetoresistive units are configured at one side of the plurality of first magnetoresistive units in the second direction;
the first test lead is configured at one side of the first magneto-resistance units in the third direction and extends along the first direction;
the second test lead is configured at one side of the second magneto-resistance units in the third direction and extends along the first direction; and
and the driver is electrically connected to the first test lead and the second test lead and is used for enabling two currents in the same direction and two currents in the opposite directions to flow through the first test lead and the second test lead respectively at different times.
2. The magnetic field sensing device according to claim 1, wherein the first and second magnetoresistive cells include anisotropic magnetoresistors, and the magnetic field sensing device includes at least one magnetization direction setting element disposed at one side of the first and second magnetoresistive cells in the third direction and configured to set the magnetization directions of the anisotropic magnetoresistors to at least one of the first direction and an opposite direction of the first direction, respectively.
3. The magnetic field sensing device according to claim 1, wherein the first plurality of magnetoresistive cells and the second plurality of magnetoresistive cells are electrically connected in at least one wheatstone bridge to output a voltage signal corresponding to the magnetic field component in the second direction or to output a voltage signal corresponding to the magnetic field component in the second direction and the magnetic field component in the third direction.
4. The magnetic field sensing device according to claim 1, wherein the sensing direction of each first magnetoresistive cell is tilted with respect to the second direction, the sensing direction of each second magnetoresistive cell is tilted with respect to the second direction, and the tilting direction of the sensing direction of each first magnetoresistive cell with respect to the second direction is opposite to the tilting direction of the sensing direction of each second magnetoresistive cell with respect to the second direction.
5. The magnetic field sensing device according to claim 4, wherein the sense direction of each first magnetoresistive cell is tilted with respect to the second direction by the same degree as the sense direction of each second magnetoresistive cell is tilted with respect to the second direction.
6. The magnetic field sensing device according to claim 1, further comprising:
a plurality of third magnetoresistive cells arranged along the first direction, wherein a sensing direction of each third magnetoresistive cell is perpendicular to the first direction;
a plurality of fourth magnetoresistive units arranged along the first direction, wherein the sensing direction of each fourth magnetoresistive unit is perpendicular to the first direction, and the plurality of first, second, third and fourth magnetoresistive units are sequentially arranged in the second direction;
a third testing conductive line disposed on one side of the plurality of third magnetoresistive units in the third direction and extending along the first direction, wherein the third testing conductive line is connected in parallel with the first testing conductive line; and
and a fourth test wire, configured on one side of the fourth magnetoresistance units in the third direction, and extending along the first direction, wherein the fourth test wire is connected in parallel with the second test wire.
7. The magnetic field sensing device according to claim 6, wherein the first, second, third and fourth plurality of magnetoresistive units are electrically connected to at least one wheatstone bridge for outputting a voltage signal corresponding to the magnetic field component in the second direction or outputting a voltage signal corresponding to the magnetic field component in the second direction and the magnetic field component in the third direction.
8. The magnetic field sensing device according to claim 6, wherein the first, second, third and fourth magnetoresistive cells comprise anisotropic magnetoresistors, and the magnetic field sensing device comprises at least one magnetization direction setting element disposed at one side of the first, second, third and fourth magnetoresistive cells in the third direction and configured to set the magnetization directions of the anisotropic magnetoresistors to at least one of the first direction and an opposite direction of the first direction, respectively.
9. The magnetic field sensing device according to claim 6, wherein the sensing direction of each first magnetoresistive cell, the sensing direction of each second magnetoresistive cell, the sensing direction of each third magnetoresistive cell, and the sensing direction of each fourth magnetoresistive cell are tilted with respect to the second direction, the sensing direction of each first magnetoresistive cell is tilted with respect to the second direction opposite to the tilting direction of the sensing direction of each second magnetoresistive cell with respect to the second direction, the sensing direction of each third magnetoresistive cell is tilted with respect to the second direction in the same direction as the tilting direction of the sensing direction of each first magnetoresistive cell with respect to the second direction, and the sensing direction of each fourth magnetoresistive cell is inclined relative to the second direction in the same way as the sensing direction of each second magnetoresistive cell is inclined relative to the second direction.
10. The magnetic field sensing device according to claim 9, wherein the sense direction of each first magnetoresistive cell is tilted with respect to the second direction by the same degree as the sense direction of each second magnetoresistive cell is tilted with respect to the second direction, the sense direction of each third magnetoresistive cell is tilted with respect to the second direction by the same degree as the sense direction of each fourth magnetoresistive cell is tilted with respect to the second direction, and the sense direction of each first magnetoresistive cell is tilted with respect to the second direction by the same degree as the sense direction of each third magnetoresistive cell is tilted with respect to the second direction.
11. The magnetic field sensing device according to claim 1, further comprising:
a substrate, wherein the first test lead and the second test lead are disposed on the substrate; and
the insulating layer covers the first test wire and the second test wire, a groove is formed in the top of the insulating layer, the groove is provided with two opposite inclined side walls, and the plurality of first magneto-resistance units and the plurality of second magneto-resistance units are respectively arranged on the two inclined side walls.
Technical Field
The present invention relates to a magnetic field sensing device.
Background
Magnetometers (magnetometers) are important components for systems with compass and motion tracking functionality, and for portable systems such as smart phones, tablet computers or smart watches or industrial systems such as unmanned aerial vehicles (drones), magnetometers need to have very small package sizes and high energy efficiency at high output data rates (outputdata rates). These requirements have made Magnetoresistive (MR) sensors, including Anisotropic Magnetoresistive (AMR) sensors, Giant Magnetoresistive (GMR) sensors, and Tunneling Magnetoresistive (TMR) sensors, mainstream.
Self-monitoring of the device itself is an essential function for advanced applications such as Artificial Intelligence (AI), industrial 4.0 (industrial 4.0) or systems with a high degree of automation. Therefore, in the development of magnetometers, built-in self-test technology (building-in self-test technology) is becoming an important development direction.
Disclosure of Invention
The present invention is directed to a magnetic field sensing device with built-in self-test functionality.
An embodiment of the invention provides a magnetic field sensing device, which includes a plurality of first magnetoresistive units, a plurality of second magnetoresistive units, a first test wire, a second test wire, and a driver. The first magnetoresistive cells are arranged along a first direction, wherein the sensing direction of each first magnetoresistive cell is perpendicular to the first direction. The second magnetoresistive units are arranged along a first direction, wherein the sensing direction of each second magnetoresistive unit is perpendicular to the first direction, and the second magnetoresistive units are arranged on one side of the first magnetoresistive units in a second direction. The first test wires are arranged on one side of the first magneto-resistance units in a third direction and extend along the first direction. The second test wires are arranged on one side of the second magneto-resistance units in the third direction and extend along the first direction. The driver is electrically connected to the first test wire and the second test wire and is used for enabling two currents in the same direction and two currents in the opposite directions to flow through the first test wire and the second test wire respectively at different times.
In an embodiment of the invention, the first magnetoresistive cells and the second magnetoresistive cells include a plurality of anisotropic magnetoresistances, and the magnetic field sensing device includes at least one magnetization direction setting element disposed at one side of the first magnetoresistive cells and the second magnetoresistive cells in a third direction and configured to set the magnetization directions of the anisotropic magnetoresistances to at least one of the first direction and an opposite direction of the first direction, respectively.
In an embodiment of the invention, the first magnetoresistive units and the second magnetoresistive units are electrically connected to form at least one wheatstone bridge for outputting a voltage signal corresponding to the magnetic field component in the second direction or outputting a voltage signal corresponding to the magnetic field component in the second direction and the magnetic field component in the third direction.
In an embodiment of the invention, a sensing direction of each first magnetoresistive cell is inclined with respect to the second direction, a sensing direction of each second magnetoresistive cell is inclined with respect to the second direction, and the inclination direction of the sensing direction of each first magnetoresistive cell with respect to the second direction is opposite to the inclination direction of the sensing direction of each second magnetoresistive cell with respect to the second direction.
In an embodiment of the invention, a sensing direction of each first magnetoresistive cell is tilted with respect to the second direction by the same degree as a sensing direction of each second magnetoresistive cell is tilted with respect to the second direction.
In an embodiment of the invention, the magnetic field sensing device further includes a plurality of fourth magnetoresistive cells, a third test wire and a fourth test wire. The third magnetoresistive cells are arranged along a first direction, wherein a sensing direction of each third magnetoresistive cell is perpendicular to the first direction. The fourth magnetoresistive units are arranged along a first direction, wherein the sensing direction of each fourth magnetoresistive unit is perpendicular to the first direction, and the first, second, third and fourth magnetoresistive units are sequentially arranged in a second direction. The third testing wires are arranged on one side of the third magneto-resistance units in the third direction and extend along the first direction, wherein the third testing wires are connected with the first testing wires in parallel. The fourth test conducting wires are configured on one side of the fourth magneto-resistance units in the third direction and extend along the first direction, wherein the fourth test conducting wires are connected with the second test conducting wires in parallel.
In an embodiment of the invention, the first, second, third and fourth magnetoresistive units are electrically connected to form at least one wheatstone bridge for outputting a voltage signal corresponding to the magnetic field component in the second direction or outputting a voltage signal corresponding to the magnetic field component in the second direction and the magnetic field component in the third direction.
In an embodiment of the invention, the first, second, third and fourth magnetoresistive units include a plurality of anisotropic magnetoresistors, and the magnetic field sensing device includes at least one magnetization direction setting element disposed at one side of the first, second, third and fourth magnetoresistive units in the third direction and configured to set the magnetization directions of the anisotropic magnetoresistors to at least one of the first direction and an opposite direction of the first direction, respectively.
In an embodiment of the invention, a sensing direction of each first magnetoresistive cell, a sensing direction of each second magnetoresistive cell, a sensing direction of each third magnetoresistive cell, and a sensing direction of each fourth magnetoresistive cell are all tilted with respect to the second direction, the tilting direction of the sensing direction of each first magnetoresistive cell with respect to the second direction is opposite to the tilting direction of the sensing direction of each second magnetoresistive cell with respect to the second direction, the tilting direction of the sensing direction of each third magnetoresistive cell with respect to the second direction is the same as the tilting direction of the sensing direction of each first magnetoresistive cell with respect to the second direction, and the tilting direction of the sensing direction of each fourth magnetoresistive cell with respect to the second direction is the same as the tilting direction of the sensing direction of each second magnetoresistive cell with respect to the second direction.
In an embodiment of the invention, a degree of inclination of the sensing direction of each first magnetoresistive cell with respect to the second direction is the same as a degree of inclination of the sensing direction of each second magnetoresistive cell with respect to the second direction, a degree of inclination of the sensing direction of each third magnetoresistive cell with respect to the second direction is the same as a degree of inclination of the sensing direction of each fourth magnetoresistive cell with respect to the second direction, and a degree of inclination of the sensing direction of each first magnetoresistive cell with respect to the second direction is the same as a degree of inclination of the sensing direction of each third magnetoresistive cell with respect to the second direction.
In an embodiment of the invention, the magnetic field sensing device further includes a substrate and an insulating layer. The first test lead and the second test lead are arranged on the substrate. The insulating layer covers the first test wire and the second test wire, the top of the insulating layer is provided with a groove, the groove is provided with two opposite inclined side walls, and the first magnetoresistance units and the second magnetoresistance units are respectively arranged on the two inclined side walls.
In the magnetic field sensing device according to the embodiment of the invention, the first test wire and the second test wire are adopted, and the driver is utilized to respectively enable two currents in the same direction and two currents in opposite directions to flow through the first test wire and the second test wire at different times, so that the magnetic field sensing device can be built in with a self-test function.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
FIG. 1A is a schematic top view of a magnetic field sensing device according to an embodiment of the present invention;
FIG. 1B is a cross-sectional view of the magnetic field sensing device of FIG. 1A along line I-I;
FIG. 2A is a schematic top view of the magnetic field sensing device of FIG. 1A when a driver applies a reverse current to the first test conductive line and the second test conductive line;
FIG. 2B is a cross-sectional view of the magnetic field sensing device of FIG. 2A along line I-I;
FIG. 3A is a schematic top view of the magnetic field sensing device of FIG. 1A when the driver applies currents in the same direction to the first test conductive line and the second test conductive line;
FIG. 3B is a cross-sectional view of the magnetic field sensing device of FIG. 3A along line I-I;
FIGS. 4A and 4B are diagrams illustrating the operation of the anisotropic magnetoresistance of FIG. 1A;
FIG. 5 shows the first, second, third and fourth magnetoresistive cells of FIG. 1A connected as a Wheatstone bridge;
FIG. 6A is a schematic top view of a magnetic field sensing device according to another embodiment of the present invention;
FIG. 6B is a cross-sectional view of the magnetic field sensing device of FIG. 6A along line II-II;
FIG. 7 shows the first, second, third and fourth magnetoresistive cells of FIG. 6A connected in another Wheatstone bridge;
FIG. 8 is a schematic top view of a magnetic field sensing device according to yet another embodiment of the present invention;
FIG. 9 is a schematic top view of a test lead of a magnetic field sensing device according to yet another embodiment of the present invention;
fig. 10 is a schematic top view of a test lead of a magnetic field sensing device according to another embodiment of the invention.
Description of the reference numerals
100. 100a, 100 b: magnetic field sensing device
110: first magneto-resistance unit
120: second magnetoresistive cell
130: third magnetoresistive cell
140: fourth magnetoresistive cell
210: first test wire
220: second test wire
230: third test wire
240: fourth test wire
250: fifth test wire
260: sixth test wire
300: anisotropic magnetoresistance
310: short-circuit bar
320: ferromagnetic film
400: driver
500. 510, 520: magnetization direction setting element
610: substrate
620. 630 and 640: insulating layer
642: groove
B1, B2: magnetic field
D: direction of extension
D1: a first direction
D2: second direction
D3: third direction
H: external magnetic field
H1, H2: direction of rotation
i: electric current
J1, J2: electric current
L1, L2, L3, L4: inclined side wall
M: direction of magnetization
P1, P2, P3, P4, P5, P6, P7, P8, P9, P10, P11, P12: endpoint
S1, S2, S3, S4: sensing direction
VDD: reference voltage
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1A is a schematic top view of a magnetic field sensing device according to an embodiment of the invention, and fig. 1B is a schematic cross-sectional view of the magnetic field sensing device of fig. 1A along the line I-I. Referring to fig. 1A and 1B, the magnetic
The
In this embodiment, the magnetic
FIG. 2A is a top view of the magnetic field sensing device of FIG. 1A when a driver applies a reverse current to a first test conductive line and a second test conductive line, and FIG. 2B is a cross-sectional view of the magnetic field sensing device of FIG. 2A along line I-I. FIG. 3A is a top view of the magnetic field sensing device of FIG. 1A when the driver applies currents in the same direction to the first test conductive line and the second test conductive line, and FIG. 3B is a cross-sectional view of the magnetic field sensing device of FIG. 3A along the line I-I. Referring to fig. 2A and 2B, at a first time, the
At a second time different from the first time, as shown in fig. 3A and 3B, the
In this way, the magnetic fields B1 and B2 generated at the first time and the second time can be used as the reference magnetic fields of the first, second, third and fourth
Referring to fig. 1A and 1B again, in the present embodiment, the first
FIGS. 4A and 4B are diagrams illustrating the operation of the anisotropic magnetoresistance of FIG. 1A. Referring to fig. 4A, each of the first, second, third and fourth
Before the
Then, the magnetization
When an external magnetic field H faces a direction perpendicular to the extending direction D, the magnetization direction M of the
However, as shown in fig. 4B, when the extending direction of the shorting
In addition, when the magnetization direction M of the
In summary, when the setting direction of the shorting bar 310 is changed, the resistance value R of the anisotropic magnetoresistive film 300 changes from + Δ R to- Δ R or vice versa in response to the change of the external magnetic field H, and when the magnetization direction M set by the magnetization direction setting element 510 changes to the opposite direction, the resistance value R of the anisotropic magnetoresistive film 300 changes from + Δ R to- Δ R or vice versa in response to the change of the external magnetic field H. When the direction of the external magnetic field H is changed to the opposite direction, the resistance value R of the anisotropic magnetoresistance 300 may be changed from + Δ R to- Δ R or vice versa corresponding to the change of the external magnetic field H. However, when the current i passing through the anisotropic magnetoresistance 300 changes in the opposite direction, the resistance value R of the anisotropic magnetoresistance 300 maintains the same sign as the original resistance value corresponding to the change of the external magnetic field H, i.e., if the resistance value R is + Δ R, the resistance value R remains + Δ R after the current direction is changed, and if the resistance value R is- Δ R, the resistance value R remains- Δ R after the current direction is changed.
In accordance with the above principle, the direction of change of the resistance value R of the
Fig. 5 shows the first, second, third and fourth magnetoresistive cells of fig. 1A connected as a Wheatstone bridge. Referring to fig. 1A and 5, the first, second, third and fourth
Since the first, second, third and
Referring to fig. 1B, in the present embodiment, the magnetic
FIG. 6A is a top view of a magnetic field sensing device according to another embodiment of the present invention, and FIG. 6B is a cross-sectional view of the magnetic field sensing device of FIG. 6A taken along line II-II. Referring to fig. 6A and 6B, the magnetic
Since the first, second, third and fourth
In the present embodiment, the inclination degree of the sensing direction S1 of each first
In this embodiment, since the first, second, third and fourth
In addition, in another time period, the first, second, third and fourth
The switching of the wheatstone bridge of fig. 5 and the wheatstone bridge of fig. 7 may be accomplished by a switching assembly located in the
Fig. 8 is a schematic top view of a magnetic field sensing device according to another embodiment of the invention. Referring to fig. 8, the magnetic
Fig. 9 is a schematic top view of a test lead of a magnetic field sensing device according to still another embodiment of the invention. Referring to fig. 9, the magnetic field sensing device of the present embodiment has a plurality of sets of the first, second, third and
Fig. 10 is a schematic top view of a test lead of a magnetic field sensing device according to another embodiment of the invention. Referring to fig. 10, the magnetic field sensing device of the present embodiment has a plurality of sets of test conductive lines similar to the plurality of sets of test conductive lines of the magnetic field sensing device of fig. 9, and the difference between the sets of test conductive lines is that in the present embodiment, each set of test conductive lines further includes a fifth test conductive line 250 and a sixth test conductive line 260, which are similar to the third test
In summary, in the magnetic field sensing apparatus according to the embodiment of the invention, the first test wire and the second test wire are adopted, and the driver is used to enable the two currents in the same direction and the two currents in the opposite directions to flow through the first test wire and the second test wire at different times, so that the magnetic field sensing apparatus can be built in with a self-test function.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.