Cleaning member and method in electroplating system
阅读说明:本技术 在电镀系统中的清洁部件和方法 (Cleaning member and method in electroplating system ) 是由 凯尔·M·汉森 于 2019-01-30 设计创作,主要内容包括:用于清洁电镀系统部件的系统可包括密封件清洁组件,密封件清洁组件与电镀系统结合。密封件清洁组件可包括臂,臂于第一位置和第二位置之间为可枢转的。臂可绕着臂的中央轴为可旋转的。密封件清洁组件亦可包括清洁头,清洁头包括托架部,托架部与臂的远端部耦接。清洁头可由前部作为特征,前部形成为与电镀设备的密封件接合。清洁头可沿着前部限定沟槽,并且清洁头可限定多个流体通道,这些流体通道穿过清洁头,所述多个流体通道的每一个流体通道流体地通往沟槽的背侧。(A system for cleaning plating system components can include a seal cleaning assembly coupled to a plating system. The seal cleaning assembly may include an arm pivotable between a first position and a second position. The arm may be rotatable about a central axis of the arm. The seal cleaning assembly may also include a cleaning head including a bracket portion coupled with the distal end portion of the arm. The cleaning head may feature a front portion formed to engage with a seal of the electroplating apparatus. The cleaning head may define a channel along the front portion, and the cleaning head may define a plurality of fluid channels through the cleaning head, each fluid channel of the plurality of fluid channels fluidly opening to the back side of the channel.)
1. A seal cleaning assembly for an electroplating apparatus, comprising:
an arm pivotable between a first position and a second position, wherein the arm is rotatable about a central axis of the arm; and
a cleaning head including a cradle portion coupled with the distal end portion of the arm, the cleaning head characterized by a front portion formed to engage a seal of the electroplating apparatus, wherein the cleaning head defines a channel along the front portion, and wherein the cleaning head defines a plurality of fluid channels through the cleaning head, each fluid channel of the plurality of fluid channels fluidly open to a back side of the channel.
2. The seal cleaning assembly of a plating apparatus of claim 1, wherein the front portion of the cleaning head is at least partially characterized by an arcuate profile configured to receive an annular seal.
3. The seal cleaning assembly of an electroplating apparatus of claim 1, wherein the cleaning head further comprises a contact pin extending at least partially through the groove and configured to directly contact the seal.
4. The seal cleaning assembly of an electroplating apparatus of claim 3, wherein the cleaning head further comprises a clearance pin extending at least partially through the groove and configured to define a clearance between the clearance pin and the seal when the contact pin is in direct contact with the seal.
5. The seal cleaning assembly of an electroplating apparatus of claim 4, wherein the plurality of fluid channels comprises:
a first channel fluidly open to a first location along the trench; and
a second passage fluidly leading to a second location along the groove, the second location radially offset from the first location in a direction of rotation of the seal, wherein the clearance pin is located between the first location and the second location.
6. The seal cleaning assembly of a plating apparatus of claim 1, wherein the cleaning head comprises a hydrophobic material.
7. An electroplating system, comprising:
a system head having a rotor, the system head configured to hold a substrate for processing;
a seal on the rotor;
a head lift coupled with the system head and configured to position the system head; and
a seal cleaning assembly, the seal cleaning assembly comprising:
an arm pivotable between a first position and a second position, wherein a distal end of the arm is vertically aligned with an interior region of the system head, wherein the arm is rotatable about a central axis of the arm; and
a cleaning head including a cradle portion coupled with the distal end portion of the arm, the cleaning head characterized by a front portion formed to engage an inner surface of the seal, wherein the cleaning head defines a channel along the front portion, and wherein the cleaning head defines a plurality of fluid channels through the cleaning head, each fluid channel of the plurality of fluid channels fluidly open to a back side of the channel.
8. The electroplating system of claim 7 wherein when the arm is in the second position, the distal end of the arm is configured to rotate the cleaning head from a retracted position into direct contact with the seal, the electroplating system further comprising a torque controlled motor configured to drive the arm and maintain contact between the cleaning head and the seal while the rotor rotates the seal across the cleaning head.
9. The electroplating system of claim 7 wherein the seal is characterized by an annular form, and wherein the front portion of the cleaning head is at least partially characterized by an arcuate profile configured to receive an inner annular sidewall of the seal.
10. The electroplating system of claim 7, wherein the cleaning head further comprises a contact pin extending at least partially through the groove and configured to directly contact the seal during a cleaning operation.
11. The plating system of claim 10, wherein the cleaning head further comprises a clearance pin extending at least partially through the groove and configured to define a clearance between the clearance pin and the seal when the contact pin is in direct contact with the seal.
12. The electroplating system of claim 11, wherein the plurality of fluid channels comprises:
a first channel fluidly open to a first location along the trench; and
a second passage fluidly leading to a second location along the groove, the second location radially offset from the first location in a direction of rotation of the seal.
13. The electroplating system of claim 12, wherein the clearance pin is located between the first position and the second position, the electroplating system further comprising:
a fluid delivery tube extending along the arm and configured to provide fluid to the first channel; and
a fluid removal tube extending along the arm and configured to remove the fluid from the second channel, wherein a vacuum is maintained by the fluid removal tube during operation.
14. A method of cleaning an electroplating system contact seal, the method comprising:
delivering an acidic solution in a first fluid channel of a cleaning head, wherein the cleaning head is positioned to physically contact the electroplating system contact seal;
rotating the electroplating system contact seal across the cleaning head; and
drawing the acidic solution from the cleaning head through a second fluid passage radially offset from the first fluid passage in a direction of rotation of the electroplating system contact seal.
15. The method of cleaning an electroplating system contact seal of claim 14, wherein the acidic solution is substantially maintained within a volume defined in part by an inner surface of the electroplating system contact seal, a groove formed in a front portion of the cleaning head, and a contact pin extending at least partially through the groove, the contact pin being located near a leading edge of the cleaning head in a direction of rotation of the electroplating system contact seal.
Technical Field
The present technology relates to cleaning operations in semiconductor processing. More particularly, the present techniques relate to systems and methods for performing in-situ (in situ) cleaning of electroplating systems.
Background
Integrated circuits can be made by processes that produce intricately patterned layers of materials on the surface of a substrate. After formation, etching, and other processing on the substrate, a metal or other conductive material is typically deposited or formed to provide electrical connections between the components. Because this metallization may be performed after many manufacturing operations, the problems caused during metallization may result in expensive waste substrates or wafers. One common problem is the non-uniform formation of metal across the surface of the substrate.
Uniformity problems during metallization can be caused by a number of conditions related to the process or equipment. One example is plating on parts of the chamber that are or become conductive and which may result in local loss of metal on the substrate. The material may be plated on the contact ring, the contact seal, or any other component that may be within the system. This erroneous formation may limit the total amount of plating on the substrate, which may result in insufficient plating, increased cost, and device failure.
Accordingly, there is a need for improved systems and methods that can be used to manufacture high quality devices and structures. These and other needs are addressed by the present technology.
Disclosure of Invention
The present techniques may include systems and methods for cleaning plating system components, which may include a seal cleaning assembly in combination with a plating system. The seal cleaning assembly may include an arm pivotable between a first position and a second position. The arm may be rotatable about a central axis of the arm. The seal cleaning assembly may also include a cleaning head including a cradle portion coupled with the distal end of the arm. The cleaning head may feature a front portion formed to engage with a seal of the electroplating apparatus. The cleaning head may define a channel along the front portion, and the cleaning head may define a plurality of fluid channels through the cleaning head, each of the plurality of fluid channels fluidly opening to the back side of the channel.
In some embodiments, the front of the cleaning head may be at least partially characterized by an arcuate profile (arcuateprofile) configured to receive the ring seal. The cleaning head may also include a contact pin extending at least partially through the groove and configured to directly contact the seal. The cleaning head may also include a clearance pin extending at least partially through the groove and configured to define a clearance between the clearance pin and the seal when the contact pin is in direct contact with the seal. The plurality of fluid passages of the cleaning head may include a first passage fluidly open to a first location along the groove and may include a second passage fluidly open to a second location along the groove, the second location being radially offset from the first location in a direction of rotation of the seal. The clearance pin may be located between a first position and a second position. In some embodiments, the cleaning head may be or may include a hydrophobic material.
Various embodiments of the present technology additionally include an electroplating system that may include a system head having a rotor. The system head may be configured to hold a substrate for processing. The system may include a seal on the rotor. The system can include a head lift coupled to the system head and configured to position the system head. The system may also include a seal cleaning assembly. The seal cleaning assembly can include an arm pivotable between a first position and a second position, wherein a distal end of the arm can be vertically aligned with an interior region of the system head. The arm may be rotatable about a central axis of the arm. The seal cleaning assembly may also include a cleaning head including a bracket portion coupled with the distal end portion of the arm. The cleaning head may feature a front portion formed to engage with an inner surface of the seal. The cleaning head may define a channel along the front portion, and the cleaning head may define a plurality of fluid passages through the cleaning head. Each of the plurality of fluid channels may be fluidly open to the back side of the trench.
In some embodiments, the arm may be in the second position and the distal end of the arm may be configured to rotate the cleaning head from the retracted position into direct contact with the seal. The system may include a torque-controlled motor configured to drive the arm and maintain contact between the cleaning head and the seal while the rotor rotates the seal across the cleaning head. The seal may be characterized by an annular form and the front portion of the cleaning head may be at least partially characterized by an arcuate profile configured to receive the inner annular sidewall of the seal. The cleaning head may also include a contact pin extending at least partially through the groove and configured to directly contact the seal during a cleaning operation. The cleaning head may also include a clearance pin extending at least partially through the groove and configured to define a clearance between the clearance pin and the seal when the contact pin is in direct contact with the seal. The plurality of fluid passages may include a first passage fluidly opening to a first location along the groove and a second passage fluidly opening to a second location along the groove, the second location being radially offset from the first location in a direction of rotation of the seal. The clearance pin may be located between a first position and a second position. The system may also include a fluid delivery tube extending along the arm and configured to provide fluid to the first channel. The system may also include a fluid removal tube extending along the arm and configured to remove fluid from the second channel. In some embodiments, a vacuum may be maintained through the fluid removal tube during operation.
Various embodiments of the present technology may also include methods of cleaning the plating system contact seal. The method may include delivering an acidic solution in a first fluid path of the cleaning head. The cleaning head may be positioned to physically contact the plating system contact seal. The method can include rotating an electroplating system contact seal across a cleaning head. The method may also include drawing the acidic solution from the cleaning head through a second fluid passage radially offset from the first fluid passage in a direction of rotation of the electroplating system contact seal. In some embodiments, the acidic solution may be substantially maintained within a volume defined in part by an inner surface of the plating system contact seal, a groove formed in a front portion of the cleaning head, and a contact pin extending at least partially through the groove, the contact pin being adjacent a leading edge of the cleaning head in a rotational direction of the plating system contact seal.
This technique may provide a number of advantages over conventional techniques. For example, by performing in-situ cleaning of the sealed contacts, the present techniques may reduce the number of cleans. Furthermore, the equipment used may help to improve the cleaning of the contact seal without damaging other system components via the cleaning solution. These and other embodiments and many of their advantages and features are described in more detail in conjunction with the following description and the appended drawings.
Drawings
A further understanding of the nature and advantages of the disclosed embodiments may be realized by reference to the remaining portions of the specification and the drawings.
Fig. 1 depicts a schematic perspective view of a chamber that may perform a cleaning technique in accordance with some embodiments of the present technique.
FIG. 2 depicts a partial cross-sectional view of a chamber that may be associated with a seal cleaning assembly in accordance with some embodiments of the present technique.
Fig. 3 depicts a schematic perspective view of a cleaning head in accordance with some embodiments of the present technique.
Fig. 4 depicts a schematic perspective view of a cleaning head in accordance with some embodiments of the present technique.
Figure 5 depicts a schematic view of an exemplary apparatus for positioning a cleaning head, in accordance with some embodiments of the present technique.
Figure 6 depicts a schematic view of an exemplary apparatus for positioning a cleaning head, in accordance with some embodiments of the present technique.
Figure 7 depicts a partial cross-sectional view of a cleaning head in operation, in accordance with some embodiments of the present technique.
Figure 8 depicts a partial cross-sectional view of a cleaning head in operation, in accordance with some embodiments of the present technique.
FIG. 9 depicts operations of an exemplary method of cleaning a contact seal, in accordance with an embodiment of the present technique.
Some of which are included as schematic illustrations. It will be appreciated that the figures are for illustrative purposes and are not to be considered to be drawn to scale unless specifically indicated to be drawn to scale. Moreover, the drawings are provided as schematic illustrations to aid understanding and may not include all aspects or information as compared to actual representations and may include exaggerated materials for illustrative purposes.
In the drawings, similar components and/or features may have the same numerical reference. Further, various components of the same type may be distinguished by following the reference label by a letter that distinguishes among the similar components and/or features. If only the first numerical reference label is used in the specification, the description is applicable to any one of the similar components and/or features having the same first numerical reference label, regardless of the alphabetic suffix.
Detailed Description
Various operations in semiconductor manufacturing and processing are performed to fabricate large arrays of features on a substrate. When forming a semiconductor layer, vias (via), trenches, and other pathways are fabricated within the structure. These features may then be filled with a conductive or metallic material so that power passes through the device from one layer to another. As the dimensions of device features continue to shrink, the amount of metal that provides a conductive path through the substrate is also reduced. As the amount of metal is reduced, the quality and uniformity of the fill may become more critical to ensure adequate conductivity through the device. Thus, manufacturing may attempt to reduce or remove defects and discontinuities in the path.
Electroplating operations may be performed to provide conductive material to vias and other features on the substrate. Electroplating utilizes an electrolytic bath (electrolyte bath) containing ions of a conductive material to electrochemically deposit the conductive material on the substrate and to electrochemically deposit the conductive material in features defined on the substrate. The metal plated part on the substrate is used as a cathode. Electrical contacts, such as rings or pins, may allow current to flow through the system. The contact is protected from the electrolyte by a seal that prevents metal plating on other conductive components. The seal is typically a non-conductive material, however, over time, the seal may become conductive due to residues formed on the seal during the plating operation. When sufficiently conductive, electroplating may occur on the seal. Plating that may occur on the seal may reduce localized plating on the substrate, resulting in uniformity problems. Uniformity problems can result in substrate or wafer scrap.
Conventional techniques typically stop operation between wafers to clean the seal from residues. The system can be partially disassembled and the seals can be manually cleaned and scrubbed prior to replacement in the tool. This process is time consuming and abrasive scrubbing can further roughen the seal surface, increasing the amount of conductive residue that can remain on the seal during processing.
The present technology overcomes these problems by incorporating a cleaning system that can perform clean-in-place of the seal. The system may include a nozzle or head that may extend against the seal, and the cleaning solution may flow against the seal to remove any residue. By utilizing a cleaning system in accordance with the present techniques, cleaning may be more easily performed and surface damage to the seal may be limited or reduced. After describing an exemplary chamber in which various embodiments of the present technology may be performed, the remaining disclosure will discuss various aspects of the systems and processes of the present technology.
Fig. 1 depicts a schematic perspective view of an electroplating system 20 that can utilize and practice methods and cleaning systems in accordance with various embodiments of the present technique. Plating system 20 illustrates an exemplary plating system including a system head 22 and a bowl (bowl) 26. During the plating operation, the wafer may be clamped to the system head 22, inverted, and extended into the bowl 26 to perform the plating operation. The electroplating system 20 may include a head lift 24, and the head lift 24 may be configured to raise and rotate the system head 22, or otherwise position the system head within the system. The head and bowl may be affixed to the deck plate 28 or other structure, may be part of a larger system incorporating multiple electroplating systems 20, and may share electrolytes and other materials. The rotor 34 may allow the substrate clamped to the head to rotate in the bowl, or outside the bowl in a different operation. The rotor may include a contact ring 40, and the contact ring 40 may provide an electrically conductive contact with the substrate. FIG. 1 depicts a plating chamber that may include components to be cleaned directly on a platen. It will be appreciated that other configurations are possible, including several platforms on which the head moves to additional modules and on which cleaning of seals or other components is performed. In addition, one or more components, such as the seal ring, may be removed from the chamber and placed in a maintenance system or a cleaning system for cleaning. Any number of other operations may be performed to provide or expose the component for cleaning.
Turning to fig. 2, fig. 2 illustrates a partial cross-sectional view of the electroplating system 20. A motor 38 included in the head may provide rotation of the contact ring 40 and the contact seal 50, the contact seal 50 may seal the substrate. This seal may provide isolation of the contact ring 40 from the electrolyte during operation to prevent plating on the contact ring. This seal may be made of an insulating material and may be made of a material configured to limit interaction with the electrolyte. For example, the seal material may include some polymers including elastomers, such as fluoroelastomers (fluoroelastomers) including any FKM materials including Type 1 (Type 1), Type 2 (Type 2), Type 3 (Type 3), Type4 (Type4), and Type 5 (Type 5) FKM materials, and may include fluoropolymers. These materials may also include perfluoroelastomers (perfluoroelastomers), including any FFKM material, as well as tetrafluoroethylene/propylene rubber or FFPM. The seal material may also comprise thermoplastic elastomers including thermoplastic vulcanizates (thermoplastic vulcanizes) and elastomers with additional moieties (moieties) such as styrene-ethylene/butylene-styrene (styrene ethylene butylene), as well as materials developed from polyolefins (polyoefins) or other plastics. The seal may also comprise any other material that is compatible with the electroplating system and the electrolyte.
As explained above, residues may form on the seal during the plating operation. In some embodiments of the present technology, after the plating operation, the substrate may be removed and the seal may be cleaned. The seals may be cleaned on the same platform as the bowl, or the head may be repositioned to a separate module associated with the plating system 20 or connected to the system 20. The system head 22 may be reversed and the seal cleaning assembly may be used while the seal is still connected to the head to clean the seal. Fig. 3 depicts a schematic front perspective view of a
As shown, the
The
The cleaning
A
The cleaning
The cleaning
Fig. 4 depicts a schematic perspective view of a
FIG. 5 depicts a schematic view of an exemplary apparatus for positioning a cleaning head, in accordance with some embodiments of the present technique. The illustrated apparatus may include a base 303, and the torque control motor may be connected within the base 303. The
Figure 6 depicts a schematic view of an exemplary apparatus for positioning a cleaning head, in accordance with some embodiments of the present technique. Once the cleaning
In some embodiments, fig. 4, as previously described, additionally depicts that the
The cleaning head may comprise one or more contact pins which may interact with the seal to be cleaned. As shown, the cleaning
The cleaning
By including the clearance pin 336, a reduced clearance that can be used to ensure full contact along the surface of the seal can be maintained as the seal is rotated across the cleaning head. In some embodiments, the gap may be less than or about 1cm, and may be less than or about 9mm, less than or about 8mm, less than or about 7mm, less than or about 6mm, less than or about 5mm, less than or about 4mm, less than or about 3mm, less than or about 2mm, less than or about 1mm, less than or about 0.5mm, less than or about 0.2mm, or less, depending on the size of the system and the surface to be cleaned. The contact pins 328, 330 and the clearance pin 336 may be of a material similar to or different from the material of the seal or cleaning head, and may be or include any of the aforementioned materials. The pins may be a general purpose plastic including polyethylene (polyethylene) or any other long chain polymer material that may provide low friction or other beneficial properties. Further, while the material may be compatible with the seal material to limit damage to the seal, the pins may comprise any other polymer that is resistant to wear since the contact pins may directly contact the seal. The pins may also be accessible from below the cleaning head and replaced when needed.
The clearance pin 336 may be positioned within the cleaning head between the inlet and outlet passages for the cleaning fluid. For example, as shown, the first fluid passage 326a may extend inward to the contact pin 328 and open into the
The cleaning solution may be flowed or pumped into the first fluid passage 326a, for example, by delivering the cleaning solution through the
Fig. 8 illustrates another partial cross-sectional view of the
The previously described systems and components may be used in a number of methods for in situ component cleaning. Fig. 9 depicts operations of an
In some embodiments, the cleaning solution may be or may include an acidic solution. The residue may include metal ions or materials on the surface of the seal, which may be removed by acid wash. The acidic solution may be selected based on the metal being plated, and may include nitric acid, acetic acid, sulfuric acid, or any other organic or inorganic acid, and may include acid mixtures that may aid in removing copper material, nickel material, tin-silver solder, or other materials that may contribute to the removal of plating and may cause residue to form on the seal. Other materials include metal organic materials and composite metals such as silver, for example in a tin-silver bath.
As explained above, the cleaning head may be made of a hydrophobic material, which may limit or avoid wetting of the cleaning solution onto the cleaning head material. The delivery of cleaning solution, removal of cleaning solution, and rotation of the seal may also be performed in a manner that limits contact of the solution with the surface of the cleaning head, as well as limits dripping or leakage of solution from the cleaning head into contact with any other component of the system head. For example, if an acidic solution is allowed to interact with the contact, damage to the contact may result, and thus, by carefully controlling the delivery and removal of the solution, the acidic solution may be used in the present techniques, unlike other in situ systems that may be limited to the use of water. By utilizing the present techniques, the cleaning solution may be substantially maintained within a volume defined in part by the inner surface of the contact seal, a groove formed in the front of the cleaning head, and one or more contact pins extending at least partially through the groove, the contact pins being located adjacent the leading and trailing edges of the cleaning head in a direction of rotation of the contact seal across the cleaning head.
In some embodiments, a water rinse may be performed with water (such as deionized water) followed by delivery and removal of the cleaning solution. The water may be delivered in the same manner as the cleaning solution. In some embodiments, the water may be delivered at a volume flow rate greater than the cleaning solution. By delivering additional water relative to the removal rate, the water may flow further into the volume, for example interacting with the contact pins 328 or 330, and any residual cleaning solution may be efficiently rinsed from the cleaning head. In addition, a certain amount of water may leak or be ejected from the cleaning head and may wash the lower contacts on the system head. The present techniques provide the ability to clean the contact seal in-situ, which limits the downtime of the electroplating equipment, while also limiting the formation of conductive residues on the exposed tool surfaces that may affect the plating uniformity on the substrate. Thus, improved yield and quality may be provided by systems and methods according to the present techniques.
In the description above, for the purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. It will be apparent, however, to one skilled in the art that the specific embodiments may be practiced without some or with additional details. For example, other substrates that may benefit from the described wetting techniques may be used with the present techniques.
Having disclosed several embodiments, it will be recognized by those of skill in the art that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Additionally, some well known processes and elements have not been described in order to avoid unnecessarily obscuring the present technology. Accordingly, the above description should not be taken as limiting the scope of the present technology.
It will be understood that where a range of values is provided, each intervening value, to the smallest unit of lower limit, between the upper and lower limit of that range is also specifically disclosed unless the context clearly dictates otherwise. Any stated value or intervening value in a stated range, or any narrower range between any other stated or intervening value in a stated range is encompassed. The upper and lower limits of these smaller ranges may independently be included or excluded in the range, and any specifically excluded limit in the stated range is intended to be encompassed within the technology, subject to any specifically excluded limit in the stated range, or each range where either, neither or both limits are included in the smaller ranges. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included. Where multiple values are provided in a list, any range encompassing or based on those values is similarly specifically disclosed.
As used herein and in the appended claims, the singular forms "a", "an", and "the" include plural references unless the content clearly dictates otherwise. Thus, for example, reference to "a material" includes a plurality of such materials, and reference to "the channel" includes reference to one or more channels and equivalents thereof known to those skilled in the art, and so forth.
Furthermore, the words "comprise(s)", comprising, containing, holding, including(s), and including "when used in this specification and in the claims which follow are intended to specify the presence of stated features, integers, components, or operations, but they do not preclude the presence or addition of one or more other features, integers, components, operations, acts, or groups thereof.