阅读说明：本技术 半导体设备腔体内铝基材多孔分气装置超洁净清洗工艺 (Ultra-clean cleaning process for aluminum substrate porous gas distribution device in cavity of semiconductor equipment ) 是由 姚雪 贺贤汉 李泓波 王松朋 于 2020-05-14 设计创作，主要内容包括：本发明公开一种半导体设备腔体内铝基材多孔分气装置超洁净清洗工艺,属于半导体设备部件洁净清洗技术领域；包括使用圆盘式砂纸气动打磨机对待清洗装置部件进行初步打磨处理；将装置部件置于混酸溶液中进行去膜处理；装置部件使用高纯水进行漂洗；采用高压水射流清洗机,对装置部件进行高压水洗；将装置部件置于旋转打磨台中心并固定,进行精细打磨；把装置部件放入酸溶液a中浸泡一段时间后用纯水冲洗；将装置部件再放入酸溶液b中浸泡一段时间后用纯水冲洗；采用高压水射流清洗机对装置部件再次进行高压水洗；采用超声波进行清洗；采用压缩空气对装置部件进行吹干处理。该工艺能控制孔径变化在2μm内,去除了沉积膜污染物及各类腐蚀印记。(The invention discloses an ultra-clean cleaning process for an aluminum substrate porous gas distribution device in a cavity of semiconductor equipment, belonging to the technical field of cleaning of semiconductor equipment parts; the method comprises the steps of carrying out primary polishing treatment on a part of a device to be cleaned by using a disc type abrasive paper pneumatic polishing machine; placing the device part in a mixed acid solution for membrane removal treatment; rinsing the device parts by using high-purity water; high-pressure water jet cleaning is carried out on the device parts by adopting a high-pressure water jet cleaning machine; placing the device part in the center of a rotary polishing table, fixing and performing fine polishing; soaking the device part in an acid solution a for a period of time, and then washing the device part with pure water; putting the device part into the acid solution b again, soaking for a period of time, and then washing with pure water; high-pressure water washing is carried out on the device parts again by adopting a high-pressure water jet cleaning machine; cleaning by adopting ultrasonic waves; and drying the device parts by adopting compressed air. The process can control the aperture change within 2 μm, and remove deposited film pollutants and various corrosion marks.)

1. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment is characterized by comprising the following specific steps of:

the method comprises the following steps: carrying out primary polishing treatment on a part of a device to be cleaned by using a disc type abrasive paper pneumatic polishing machine;

step two: after primary polishing treatment, placing the device part in a mixed acid solution for membrane removal treatment, wherein the soaking time is 30-40 s;

step three: rinsing the immersed device parts by using high-purity water;

step four: after rinsing, a high-pressure water jet cleaning machine is adopted to carry out high-pressure water washing on the device components;

step five: after washing, placing the device part in the center of a rotary polishing table, fixing and finely polishing;

step six: after polishing, the device part is placed into an acid solution a for soaking for a period of time and then is washed by pure water;

step seven: after washing, the device parts are put into the acid solution b again to be soaked for a period of time and then washed by pure water;

step eight: after washing, high-pressure water jet cleaning is carried out on the device parts again by using a high-pressure water jet cleaning machine;

step nine: washing with ultrasonic wave after water washing;

step ten: and after cleaning, drying the device parts by adopting compressed air.

2. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 1, further comprising the steps eleven and twelve:

step eleven: protecting the non-working area by using an adhesive tape after blow-drying treatment, and then carrying out fine sand blasting treatment on the working surface of the device part by using an automatic sand blasting machine;

step twelve: after sand blasting, high-pressure water jet cleaning is carried out on the device parts by a high-pressure water jet cleaning machine;

the device component processed in step ten or step twelve, further comprising:

step thirteen: cleaning in a dust-free room by adopting ultrasonic waves;

fourteen steps: after cleaning, drying the device parts by adopting compressed air in a dust-free chamber;

step fifteen: and after the drying treatment, heating and drying the device parts in a dust-free room by using a vacuum oven.

3. The ultra-clean cleaning process for the porous aluminum substrate gas distribution device in the cavity of the semiconductor equipment as claimed in claim 1 or 2, wherein in the second step, the device part is pulled out of the mixed acid solution once every 10 seconds and then is immersed in the mixed acid solution, and the operation is repeated for 3-4 times.

4. The ultra-clean cleaning process for the porous gas distribution device of aluminum substrate in the cavity of semiconductor equipment as claimed in claim 1 or 2, wherein the mixed acid solution in the second step is HF: HNO₃1:9 by volume.

5. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 1 or 2, wherein the pressure of the high-pressure water jet cleaning machine in the fourth step and the eighth step is adjusted to 20-25Mpa, and the high-pressure water washing time is set to 1.5-2.5 min.

6. The ultra-clean cleaning process for the porous gas separation device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 1 or 2, wherein in the fifth step, brown and white scouring pads are used for fine grinding.

7. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 1 or 2, wherein the acid solution a is HF H₂The volume ratio of O is 1:25, and the acid solution b is HNO₃:H₂With a volume ratio of O of 1:4A solution; the soaking time in the acid solution a is 10-15s, and the soaking time in the acid solution b is 55-75 s.

8. The ultra-clean cleaning process for the porous gas distribution device of aluminum substrate in the cavity of semiconductor equipment as claimed in claim 2, wherein the ultrasonic intensity in step nine is 8 ± 2W/inch²Ultrasonic treatment time is 4-6 min; in the thirteenth step, the ultrasonic intensity is 8 + -2W/inch²The ultrasonic treatment time is 9-11 min.

9. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment as claimed in claim 2, wherein in the step twelve, the pressure of the high-pressure water jet cleaning machine is adjusted to 10-15Mpa, and the high-pressure water washing time is set to 2.5-3 min.

10. The ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor device as claimed in claim 2, wherein the drying temperature of the vacuum oven in the fifteenth step is set to 145-165 ℃, and the drying time is set to 3.5-4.5 h.

Technical Field

The invention relates to the technical field of cleaning of semiconductor equipment parts, in particular to a cleaning process of an aluminum substrate porous gas distribution device.

Background

The semiconductor process involves various gases, plasmas, corrosive chemicals and the like, which can deposit and form a pollution film on the surface of a component due to reaction, and the existence of pollutants has certain influence on the parameter performance and the like of the component, thereby possibly causing the damage of the component, the reduction of the yield and the like. Therefore, the parts are cleaned and regenerated regularly to meet the requirements of process parameters, performance and the like, and the method has important significance for the stability of chip process technology, production cost and the like. However, for the porous gas distribution device in the cavity of the semiconductor device, excessive cleaning may result in too fast increase of the pore diameter and shortened service life, so a new process is urgently needed to solve the problem.

Disclosure of Invention

In order to solve the problems, the application provides an ultra-clean cleaning process for the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment, the process can control the pore diameter change within 2 mu m, deposited film pollutants and various corrosion marks are removed, and meanwhile, the cleaned porous gas distribution device of the aluminum substrate meets the requirements of various engineering parameters.

In order to achieve the purpose, the technical scheme of the application is as follows: the ultra-clean cleaning process of the porous gas distribution device of the aluminum substrate in the cavity of the semiconductor equipment comprises the following specific steps:

the method comprises the following steps: carrying out primary polishing treatment on a part of a device to be cleaned by using a disc type abrasive paper pneumatic polishing machine; the purpose is to remove surface scratches, corrosion marks and the like;

step two: placing the polished device part in HF (hydrogen fluoride) HNO (hydrogen fluoride)₃Carrying out membrane removal treatment in mixed acid solution with the volume ratio of 1:9 for 30-40 s; the mixed acid solution is corrosive to the aluminum substrate, the part of the device to be cleaned is of a porous structure, the pore diameter is easy to expand due to too long pickling time, and the pore structure is not sufficiently cleaned due to too short pickling time, so that the strict control of the pickling time is very critical; preferably, the device parts are pulled out of the mixed acid solution once every 10 seconds and then immersed in the mixed acid solution, and the operation is repeated for 3-4 times.

Step three: rinsing the pickled device parts by using high-purity water; the purpose is to dilute and remove the surface residual acid;

step four: adopting a high-pressure water jet cleaning machine to adjust the pressure as follows: washing the device parts under 20-25Mpa for 1.5-2.5 min; aims to remove residual films and impurities adhered on the surface after acid treatment and avoid blocking the porous structure;

step five: placing the device part in the center of a rotary polishing table and fixing, and performing fine polishing by using brown and white scouring pads; the scratch is removed, so that the surface grains and the color are uniform;

step six: placing the device parts in HF: H₂Soaking in an acid solution with the volume ratio of O being 1:25 for 10-15 s; the purpose is to neutralize other metal ions present on the surface of the device components; then flushing with high-purity water;

step seven: placing the device part in HNO₃:H₂Soaking in acid solution with the volume ratio of O being 1:4 for 55-75 s; aims to passivate the surface of an aluminum substrate, improve the corrosion resistance and simultaneously improve the appearance color of a product; then flushing with high-purity water;

step eight: adopting a high-pressure water jet cleaning machine to adjust the pressure as follows: washing the device parts under high pressure at 20-25MPa for 1.5-2.5 min; aims to remove residual films and impurities adhered on the surface after acid treatment and avoid blocking the porous structure;

step nine: cleaning with ultrasonic wave with intensity of 8 + -2W/inch²Ultrasonic treatment for 4-6 min; the purpose is to remove surface micro particles;

step ten: drying the device parts by using compressed air; the purpose is to prevent the surface from remaining water stain and affecting the appearance;

for parts of the device needing sand blasting, the method further comprises the following steps of eleven:

step eleven: protecting the non-working area by using an adhesive tape, and then carrying out fine sand blasting treatment on the working surface of the device part by using an automatic sand blasting machine, wherein the sand material uses carborundum WA400#/220# (according to the specific roughness parameter requirement); the purpose is to coarsen the surface of the base material and improve the film attaching capability of the device in the process; blowing by using compressed air after the sand blasting is finished, and removing surface residual sand;

step twelve: adopting a high-pressure water jet cleaning machine to adjust the pressure as follows: washing the device parts under 10-15Mpa for 2.5-3 min; the aim is to remove sand particles which may be scattered at the holes after sand blasting;

the device component processed in step ten or step twelve, further comprising:

step thirteen: cleaning with ultrasonic wave in a clean room with ultrasonic intensity of 8 + -2W/inch²Ultrasonic treatment time is 9-11 min; the purpose is to remove surface micro particles;

fourteen steps: drying the device parts in a dust-free room by adopting compressed air; the purpose is to prevent the surface from remaining water stain and affecting the appearance;

step fifteen: and (3) carrying out heating and drying treatment on the device part in a dust-free chamber by using a vacuum oven, wherein the drying temperature is 145-165 ℃, and the drying time is 3.5-4.5 h.

Due to the adoption of the technical scheme, the invention can obtain the following technical effects:

1. according to the invention, a mode of combining multi-step acid leaching is adopted, so that the brightness of the color of the aluminum substrate body is improved, the surface activity of the aluminum substrate is passivated while the surface deposits are removed, and the corrosion resistance of the aluminum substrate is enhanced;

2. the invention adopts a mode of combining sand paper and polishing of various types of scouring pads, so that fine, uniform and color-difference-free grains can be ensured while surface scratch marks are removed, and the real cleaning and regeneration effect is achieved;

3. the surface of the base material is roughened by adopting a fine sand blasting mode, so that the adhesion of the device to a deposited film in the process is improved, and the stability of parameter setting of the process is facilitated;

4. the invention adopts a multi-step high-pressure washing mode, can ensure the permeability of the porous structure while effectively removing deposited impurities, and avoids blockage;

5. the method accurately controls the time of the key pickling step, and regularly lifts the device part, so that residual films in the holes can be fully cleaned, the reaming amount can be ensured to be within 2 mu m, and the life cycle of the porous aluminum substrate part is greatly prolonged.

Detailed Description

The present invention will be described in further detail with reference to specific examples below: the present application is further described by taking this as an example.