阅读说明：本技术 一种适用于探索共体反射镜上薄膜制备工艺参数的装置 (Device suitable for exploring film preparation process parameters on reflector ) 是由 闫永达 毛立阳 曹永智 耿延泉 于 2020-06-12 设计创作，主要内容包括：一种适用于探索共体反射镜上薄膜制备工艺参数的装置,属于金属薄膜制备与检测技术领域。本发明包括外部框架、多个支撑柱和多个平面基底,所述外部框架上的四个竖直设置的支撑板上分别设有多个定位孔,所述多个定位孔、多个支撑柱以及多个平面基底数量均相同；每个所述支撑柱一端可拆卸固定插入定位孔内,每个支撑柱另一端设置在外部框架内并与平面基底一端可拆卸固定连接,所述平面基底另一端的端面与自由曲面相切。本发明具有与多面共体反射镜相同的表面粗糙度与相近的空间结构,而且便于检测,可以较为简单、准确、经济地获得沉积的工艺参数和靶基运动。(A device suitable for exploring film preparation process parameters on a reflector belongs to the technical field of metal film preparation and detection. The invention comprises an external frame, a plurality of supporting columns and a plurality of plane substrates, wherein a plurality of positioning holes are respectively arranged on four vertically arranged supporting plates on the external frame, and the number of the positioning holes, the number of the supporting columns and the number of the plane substrates are the same; one end of each supporting column is detachably and fixedly inserted into the positioning hole, the other end of each supporting column is arranged in the external frame and is detachably and fixedly connected with one end of the plane substrate, and the end face of the other end of the plane substrate is tangent to the free-form surface. The invention has the same surface roughness and similar space structure as the polyhedral reflector, is convenient to detect, and can obtain the deposited technological parameters and target base movement more simply, accurately and economically.)

1. A device suitable for exploring the technological parameters of film preparation on a reflector is characterized in that: the device comprises an external frame (1), a plurality of supporting columns (2) and a plurality of plane bases (3), wherein a plurality of positioning holes are respectively formed in four vertically arranged supporting plates (5) on the external frame (1), and the number of the positioning holes, the number of the supporting columns (2) and the number of the plane bases (3) are the same; one end of each supporting column (2) is detachably and fixedly inserted into the positioning hole, the other end of each supporting column (2) is arranged in the external frame (1) and is detachably and fixedly connected with one end of the plane substrate (3), and the end face of the other end of the plane substrate (3) is tangent to the free-form surface (7).

2. The apparatus of claim 1, wherein the apparatus is adapted to explore the parameters of a thin film fabrication process on a reflector, and comprises: the external frame (1) comprises a top cover (4), a base (6) and four supporting plates (5); the top cover (4) and the base (6) are arranged in a vertically corresponding mode and are circular, four sockets are arranged on the top cover (4) and the base (6) respectively, the four sockets on the top cover (4) and the four sockets on the base (6) are arranged in a one-to-one correspondence mode, and a supporting plate (5) is arranged in each two vertically corresponding sockets in an inserted mode.

3. An apparatus according to claim 1 or 2, adapted to explore the parameters of a thin film fabrication process on a reflector, comprising: the end face of the other end of the plane substrate (3) has the same roughness as the polyhedral reflector.

Technical Field

The invention belongs to the technical field of metal film preparation and detection, and particularly relates to a device suitable for exploring film preparation process parameters on a reflector.

Background

The off-axis multi-reflector imaging system is a key device of a high-performance omnibearing photoelectric detection system, and has wide application prospect in the fields of national defense safety, aerospace, new generation information technology and the like which have urgent requirements on large visual field and high resolution of a photoelectric system. As shown in fig. 1, the off-axis multi-mirror imaging system is composed of a plurality of optical free-form surface mirrors. During manufacturing, a plurality of reflectors are independently processed, reflection increasing films are respectively deposited on the surfaces of the reflectors in order to increase the reflectivity, and then the poses of the reflectors are installed and adjusted, so that an optical system meeting requirements is obtained.

In order to save the adjustment step and reduce the weight, researchers have proposed a method of integrally processing multiple reflecting surfaces. As shown in FIG. 1, the multi-surface co-body reflector is a multi-surface co-body reflector which is directly processed on a workpiece according to the pose and appearance data of each reflecting surface of the off-axis multi-mirror imaging system, so that the steps of assembling and adjusting are omitted, and the weight is reduced. However, the shape of the polyhedral reflector is complex, and how to prepare a high-reflection film with high reflection, wide waveband and good uniformity for the polyhedral reflector is a problem to be solved urgently.

The high-reflection film is an important part of an optical film and is mainly applied to a reflection system. The high-reflection film is divided into a metal film, a dielectric film system and a film system formed by metal and medium, and has the functions of reducing scattering of a reflection system, improving the overall reflectivity, protecting a reflection mirror surface and the like. The preparation of the high reflection film on the surface of the reflector is the final step of the reflector manufacturing, and if the technical problems existing in the thin film plating on the surface of the polyhedral reflector, such as wide band, uniformity, high reflection and the like, can not be solved, the working performance of the whole optical device is influenced.

In the method for preparing the high-reflection film, a cylindrical target magnetron sputtering can be improved to plate a polyhedral reflector, and new process parameters and target base motion are required to be researched in order to meet the reflectivity and uniformity. On one hand, the polyhedral co-body reflector has a complex structure, so that the surface film of the reflector is difficult to characterize by a conventional film characteristic characterization means, and the influence of process parameters and target base motion on reflectivity and uniformity cannot be researched; on the other hand, the polyhedral common reflector is difficult to process, long in time consumption and large in cost, the polyhedral common reflector element can be used only once in a parameter experiment, and if the polyhedral common reflector element is directly used for the parameter experiment, huge experimental cost is caused.

Disclosure of Invention

The invention aims to provide a device for replacing a polyhedral reflector and suitable for exploring the preparation process parameters of a thin film on the reflector, which is hereinafter referred to as a trial plating piece. The trial plating piece has the same surface roughness and similar spatial structure as the polyhedral reflector, and is convenient to detect. The trial plating piece is put into a plating device for process exploration test, and the deposited process parameters and target base motion can be obtained simply, accurately and economically.

The technical scheme of the invention is as follows:

a device suitable for exploring film preparation process parameters on a reflector comprises an external frame, a plurality of supporting columns and a plurality of plane substrates, wherein a plurality of positioning holes are respectively formed in four vertically arranged supporting plates on the external frame, and the number of the positioning holes, the number of the supporting columns and the number of the plane substrates are the same; one end of each supporting column is detachably and fixedly inserted into the positioning hole, the other end of each supporting column is arranged in the external frame and is detachably and fixedly connected with one end of the plane substrate, and the end face of the other end of the plane substrate is tangent to the free-form surface.

Compared with the prior art, the invention has the beneficial effects that:

1. the process parameters and the target base movement are explored by detecting the thin film on the surface of the other end of the plane substrate. The plane substrate can be detached, detection is convenient, and parameter exploration cost is low.

2. The end face of the other end of the plane substrate has the same roughness as the polyhedral common reflector, so that the influence of process parameters on the reflectivity of the polyhedral common high-reflectivity reflector can be accurately reflected.

3. The other end of the plane substrate is tangent to the polyhedral total reflector through the external frame and the supporting columns (as shown in figure 5), and the tangent point of the plane substrate has the same spatial position as the polyhedral total reflector, so that the influence of the motion of the target substrate on the uniformity of a high-reflection film of the polyhedral total reflector can be accurately reflected.

4. In the case of determining the occupation size of the support columns, the support plates can accommodate the most support columns by optimizing the positions of the support columns. The problem is converted into: in the target area, circles with the radius of 10mm are arranged, so that the number of circles in the area is the largest, and the circles do not intersect with the area boundary and the circles. The mathematical description is as follows: the lower left corner of the target area is set as the origin (0,0) of the coordinate system, the radius of the circle is R, and the coordinate of the ith circle center is (x)_i，y_i) The rectangular area is L, W in length and width. The k circles placed in the rectangular region satisfy the formula (one), and the enumeration is performed from k equal to 1 until the formula (one) cannot be satisfied, and finally the positions of the k circles placed at the maximum in the rectangular region are obtained.

In the above formula, x_jDenotes the center abscissa, y, of the jth circle_jRepresenting the longitudinal coordinate of the center of the jth circle;

using an anthropomorphic algorithm:

based on the simulation method, the circle and the rectangular area are regarded as objects, and when the objects intersect, the objects have potential energy to repel each other, and move towards the direction of reducing the potential energy, and finally the non-intersecting state can be achieved. The potential energy of the whole system is defined as:

in the formula:

representing the elastic potential energy possessed by the whole body;

d_i，jrepresenting the elastic potential energy between the ith circle and the jth circle;

d_i，k+1，d_i，k+2，d_i，k+3，d_i，k+4respectively representing the elastic potential energy of the ith circle and the lower boundary, the left boundary, the upper boundary and the right boundary;

it is clear that (1) in the defined domain (- ∞, ∞)^2kInner part

The value is non-negative, whereinIndicating the elastic potential energy that the population has.

(2) If it isThenIs not a desired location; if it isThenA location point in a disjoint state. The rectangular equal-circle Packing problem is converted into a problem of solving the minimum value of the potential energy function (formula II), and the problem can be solved by adopting a mature steepest descent method.

However, the pure anthropomorphic method may fall into the trap of the local minimum, and then the anthropomorphic method needs to be introduced to endow the small ball with human characteristics, and the small ball with the maximum potential energy can jump out of the original environment to be repositioned when being squeezed most. Define the elastic potential energy that the ith circle has:

when in useWhen iteration changes a little, the trap is regarded as a trap falling into a local minimum value, at the moment, a circle with the maximum potential energy is selected, the position of the circle is randomly distributed again, and then the simulation iteration is carried out. If the result is successful, continuing trying to put the k +1 small circle into the small circle; otherwise, the algorithm ends and k is the optimal solution。

Describing an algorithm:

step (1); the step coefficient xi is 0.5, the iteration number n is 0, and the circle number k is 1;

step (2); setting an origin at the lower left corner of a rectangular area with the length L and the width W, randomly generating k points in the rectangular area, and determining an initial position

Step (3); calculating the current overall potential energy

If it is

Then

And k is k +1, wherein,representing the coordinates of the k circles within the area,

coordinates representing a circle;

and (4) turning to the step (2). If the calculation time exceeds 10800 seconds, stopping, at most k-1 circles can be placed in the rectangular area,is a solution to the problem wherein,

representing the coordinates of k-1 circles in the area, if n > 10⁶Turning to the step (5); otherwise, executing the step (4);

step (4); steepest descent method, adjusting positionn is n +1, go to step (3)；

Step (5); selecting the potential energy with the maximum potential energyThe mth circle of (a) has a coordinate of (x)_m，y_m) Setting the position

And (4) turning to the step (3).

The distribution of the positioning holes on the supporting plate obtained through the steps is shown in FIGS. 6-9;

5. and (3) plating a trial plating piece by using special plating equipment, detecting the reflectivity and the uniformity of the planar substrate, modifying parameters and target base movement, finally obtaining proper process parameters and target base movement, and finally using the parameters and the target base movement in the plating of the actual polyhedral reflector.

Drawings

Fig. 1 is a top view of a polygon mirror mentioned in the background art, the polygon mirror includes an entrance pupil E, an exit pupil F and four mirrors, the four mirrors are a mirror a, a mirror B, a mirror C and a mirror D respectively;

FIG. 2 is an isometric view of an apparatus of the present invention suitable for exploring the parameters of a thin film fabrication process on a reflector in common;

FIG. 3 is an isometric view of the outer frame of the present invention;

FIG. 4 is an isometric view of the connection of the support plate, support posts and planar substrate of the present invention;

FIG. 5 is a schematic diagram of a trial-plated part approaching a free-form surface of a multifaceted reflector;

FIG. 6 is a first distribution diagram of positioning holes on the support plate;

FIG. 7 is a second distribution diagram of the positioning holes on the supporting plate;

FIG. 8 is a distribution diagram of positioning holes on the supporting plate;

FIG. 9 is a distribution diagram of the positioning holes on the support plate;

fig. 10 is a partial enlarged view of fig. 2 at M.

The names and reference numbers of the components referred to in the above figures are as follows:

the device comprises an outer frame 1, support columns 2, a planar substrate 3, a top cover 4, a support plate 5, a base 6 and a free-form surface 7.

Detailed Description