阅读说明：本技术 微米波段固体激光器用激光材料模块 (Laser material module for micron-waveband solid laser ) 是由 董永军 曹顿华 华伟 陈伟 潘国庆 陈蔡畅 王旭成 于 2020-06-16 设计创作，主要内容包括：本发明公开一种微米波段固体激光器用激光材料模块,包括：激光物质单元、被动调Q材料单元、第一光学膜以及第二光学膜,第一光学膜与第二光学膜相对平行设置并形成平行平面腔,激光物质单元和被动调Q材料单元置于该平行平面腔内,且激光物质单元置于靠近模块入光侧,被动调Q材料单元置于模块出光侧,第一光学膜镀于模块入光侧端面上,第二光学膜镀于模块出光侧端面上,激光物质单元采用Nd:YAG晶体或者Nd:YAG陶瓷；被动调Q材料单元采用Co:MgAl<Sub>2</Sub>O<Sub>4</Sub>晶体或Co:MgAl<Sub>6</Sub>O<Sub>10</Sub>晶体或Co<Sub>2</Sub>:LaMgAl<Sub>11</Sub>O<Sub>19</Sub>晶体或Co掺杂玻璃陶瓷。本发明选择合适的激光物质单元和被动调Q材料单元,能在半导体泵浦照射下直接出激光,通过平行平面腔腔体的设计,可以出1.064um、1.319um或者1.338um等微米波段的激光。(The invention discloses a laser material module for a micron-wave-band solid laser, which comprises: the laser module comprises a laser substance unit, a passive Q-switching material unit, a first optical film and a second optical film, wherein the first optical film and the second optical film are oppositely arranged in parallel to form a parallel plane cavity, the laser substance unit and the passive Q-switching material unit are arranged in the parallel plane cavity, the laser substance unit is arranged close to the light inlet side of the module, the passive Q-switching material unit is arranged at the light outlet side of the module, the first optical film is plated on the light inlet side end face of the module, the second optical film is plated on the light outlet side end face of the module, and the laser substance unit adopts Nd: YAG crystal or Nd: YAG ceramic; the passive Q-switching material unit adopts Co MgAl 2 O 4 Crystals or Co MgAl 6 O 10 Crystals or Co 2 :LaMgAl 11 O 19 Crystalline or Co-doped glass-ceramics. Book (I)The invention selects proper laser material unit and passive Q-switching material unit, can directly emit laser under the irradiation of semiconductor pump, and can emit laser with micron wave band of 1.064um, 1.319um or 1.338um through the design of parallel plane cavity.)

1. The laser material module for the micron-waveband solid laser comprises: laser material unit, passive Q material unit, first optical film and second optical film of transferring, first optical film and the relative parallel arrangement of second optical film form the parallel plane chamber, laser material unit and passive Q material unit of transferring arrange this parallel plane intracavity in, just laser material unit arranges in and is close to module income light side, passive Q material unit of transferring arranges in and is close to module light-emitting side, first optical film plates on module income light side end face, second optical film plates on module light-emitting side end face, its characterized in that, laser material unit adopts Nd: YAG crystal or Nd: YAG ceramics; the passive Q-switching material unit adopts Co: MgAl₂O₄Crystal or Co: MgAl₆O₁₀Crystals or Co₂：LaMgAl₁₁O₁₉Crystalline or Co-doped glass-ceramics.

2. The laser material module for the micron-waveband solid-state laser device as claimed in claim 1, further comprising: one or more heat dissipating crystal units disposed within the parallel planar cavities.

3. The laser material module for the micron-waveband solid-state laser device as claimed in claim 2, wherein the heat dissipation crystal unit is disposed at the light incident side of the module; or, the light-emitting unit is arranged on the light-incident side of the module and between two adjacent arbitrary units.

4. The laser material module as claimed in claim 3, wherein the module comprises a plurality of layers of the materialThe heat dissipation crystal unit is a pure YAG matrix or pure Al₂O₃A substrate.

5. The laser material module for the micron-waveband solid-state laser device as claimed in claim 3 or 4, wherein when the unit arranged on the light incident side of the module is a heat-dissipating crystal unit, the first optical film is plated on the surface of the heat-dissipating crystal unit;

when the unit arranged on the light inlet side of the module is a laser substance unit, the first optical film is plated on the surface of the laser substance unit.

6. The laser material module for the micron-waveband solid-state laser device according to any one of claims 1 to 4, wherein when the unit arranged on the light-emitting side of the module is a passive Q-switching material unit, the second optical film is coated on the surface of the passive Q-switching material unit;

and when the unit arranged on the light emergent side of the module is a heat dissipation crystal unit, the second optical film is plated on the surface of the heat dissipation crystal unit.

7. The laser material module for the micron-waveband solid-state laser device as claimed in any one of claims 2 to 4, wherein, for the heat dissipation crystal unit, the laser material unit and the passive Q-switching material unit, two adjacent arbitrary units are connected by bonding or gluing.

8. The module of laser material for solid-state laser in microwave band according to any one of claims 1 to 4, wherein a metal film is provided on the outer surface of the module side, and the metal film is connected to a metal heat sink.

9. The module of laser material for a solid-state laser in microwave band according to any one of claims 1 to 4, wherein a heat-dissipating crystal unit is also provided on the module-side outer surface.

10. The module of claim 9, wherein when the module has a heat-dissipating crystal unit on the outer surface, a metal film is plated on the heat-dissipating crystal unit, and the module is connected to a metal heat sink through the metal film.

Technical Field

The invention belongs to the field of lasers, and particularly relates to a laser material module for a micron-waveband solid laser.

Background

The micro high-power laser system is an important part for the development of high-tech industries, and has wide application prospect in the fields of micro-manufacturing, laser ranging, 3D scanning remote sensing survey and scanning imaging, weather measurement and control, pollution monitoring, laser warning systems, AGV forklifts, household cleaning robots, entertainment robots, data storage and the like. Especially, the laser with the wavelength larger than 1.3 microns has higher damage threshold value to human eyes, is relatively safe and has obvious application advantages.

At present, the following two technical routes are mainly used for generating solid laser with a wave band of about 1.5 microns: firstly, the existing mature 1.06 micron laser is used, the wavelength is shifted to about 1.5 micron by adopting a nonlinear conversion method, and the technology has the defects of complex device, high cost and low laser efficiency; secondly, LD pump solid material such as laser glass, laser crystal directly produces laser, then realizes pulse laser output through adjusting Q technique, and this kind of mode structure is simple relatively, but laser output efficiency, light beam quality and stability problem can not effectively be solved. When the above-mentioned technical route is used for manufacturing a laser, there are also problems that the whole laser generally adopts a discrete optical element, the system is complex, the influence of temperature fluctuation, vibration and other environments is large, and the laser output stability is poor.

To solve the above technical problems, research and development personnel continuously improve the laser, and develop to date, adopt Nd: YV04 and KTP optical glue or glued green laser material modules have gained commercial maturity. In earlier stage work, 1.5 micron human eye safety laser module (ZL201720123227.4) based on erbium-doped laser glass matrix and cobalt spinel is designed, but along with the continuous improvement of the requirement for laser power, the laser glass matrix has larger limitation due to factors such as heat conductivity and the like, and meanwhile, in higher energy occasions, the heat dissipation structure of the whole module needs to be further optimized.

Disclosure of Invention

In order to solve the technical problem, the invention provides a laser material module for a micron-waveband solid-state laser.

In order to achieve the purpose, the technical scheme of the invention is as follows:

the laser material module for the micron-waveband solid laser comprises: laser material unit, passive transfer Q material unit, first optical coating and second optical coating, first optical coating and the relative parallel arrangement of second optical coating and formation parallel plane chamber, laser unit and passive transfer Q material unit are arranged in this parallel plane intracavity, and laser unit arranges in and is close to module income light side, passive transfer Q material unit arranges in and is close to module light-emitting side, first optical coating plates on module income light side end face, second optical coating plates on module light-emitting side end face, laser unit adopts the Nd: YAG crystal or Nd: YAG ceramics; the passive Q-switching material unit adopts Co: MgAl₂O₄Crystal or Co: MgAl₆O₁₀Crystals or Co₂：LaMgAl₁₁O₁₉Crystalline or Co-doped glass-ceramics.

The laser material unit adopts Nd: YAG crystal or Nd: YAG ceramics, which have excellent physicochemical and laser properties, good mechanical and thermal properties, and high gain. Because the laser substance generates larger heat during working, the reasonable heat conduction and heat dissipation design is greatly helpful for improving the laser performance. For crystal or ceramic, the thermal conductivity can change obviously according to the doping concentration, and the thermal conductivity is lower when the concentration is higher. As at normal temperature, 0.5% concentration of Nd: YAG crystal with a thermal conductivity of about 7.8W/m × K (doped YAG and GGG laser crystal thermal conductivity research, laser technique, 2017.04); while the thermal conductivity of pure YAG crystal is about 14W/m × K, aboutHigh concentration of Nd: 2 times of YAG crystal; al (Al)₂O₃The thermal conductivity of the crystals (alumina) was about 25W/m × K. Because the thermal conductivity of the high-concentration laser matrix material is lower than that of the undoped material, the reasonable heat conduction structure has obvious benefits for improving the laser performance. By bonding or the like, in the Nd: one end or two ends of the YAG crystal are connected with pure YAG crystal or pure Al with high heat conductivity₂O₃The crystal can effectively transfer heat, enhance heat dissipation and improve the working performance of the laser crystal.

The invention discloses a laser material module for a micron-wave-band solid laser, which comprises: laser material unit, passive Q-switched material unit, first optical film and second optical film select suitable laser material unit and passive Q-switched material unit, can directly go out laser under the semiconductor pumping shines, through the design of parallel plane cavity, can go out the laser of micron wave bands such as 1.064um, 1.319um or 1.338 um.

On the basis of the technical scheme, the following improvements can be made:

preferably, the method further comprises the following steps: one or more heat dissipation crystal units, the heat dissipation crystal units are arranged in the parallel plane cavities.

As a preferred scheme, the heat dissipation crystal unit is arranged at the light incident side of the module; or, the light-emitting unit is arranged on the light-incident side of the module and between two adjacent arbitrary units.

Preferably, the heat dissipation crystal unit is a pure YAG matrix or pure Al₂O₃A substrate.

With the above preferred scheme, when the module comprises: when the heat dissipation crystal unit is used, the pump light source enters the laser material unit from the first optical film, enters the laser material unit through the heat dissipation crystal unit and is emitted out from one side of the passive Q-switching material unit with the second optical film.

As a preferred scheme, when the unit arranged on the light incident side of the module is a heat dissipation crystal unit, the first optical film is plated on the surface of the heat dissipation crystal unit;

when the unit arranged on the light inlet side of the module is a laser substance unit, the first optical film is plated on the surface of the laser substance unit.

As a preferable scheme, when the unit arranged on the light-emitting side of the module is a passive Q-switching material unit, the second optical film is plated on the surface of the passive Q-switching material unit;

when the unit arranged on the light-emitting side of the module is a heat-radiating crystal unit, the second optical film is plated on the surface of the heat-radiating crystal unit.

Preferably, for the heat dissipation crystal unit, the laser substance unit and the passive Q-switched material unit, two adjacent arbitrary units are connected in a bonding or gluing manner.

Preferably, a metal film is arranged on the outer surface of the module side, and the metal film is connected with the metal heat sink.

By adopting the preferred scheme, the outer surface of the module side is plated with the metal film, the heat dissipation effect can be improved, and the metal film can be directly connected with the metal heat sink in a welding or silver glue mode and the like, so that the thermal resistance is effectively reduced.

Preferably, a heat dissipating crystal unit is also provided on the outer surface of the module side.

Preferably, when the module side outer surface is provided with the heat dissipation crystal unit, the surface of the heat dissipation crystal unit is plated with a metal film, and is connected with the metal heat sink through the metal film.

By adopting the preferable scheme, the heat dissipation effect is improved.

The invention has the following beneficial effects:

the invention discloses a laser material module for a micron-waveband solid laser, which has the advantages of simple design, compact structure, lower cost and convenience for mass production; when in use, the heat dissipation crystal unit, the laser material unit, the passive Q-switching material unit and the parallel plane cavity (or called resonant cavity) do not need any adjustment; due to the Nd: YAG material's own excellent performance, supplementary heat conduction through different bonding modes of crystal such as pure YAG and aluminium oxide, and the metal film of module side external surface can have excellent low thermal resistance to be connected with the metal heat sink, and the module can realize higher energy output. Through suitable design, can also realize dual wavelength output, have great application prospect in leading edge fields such as terahertz wave.

Drawings

Fig. 1 is a schematic structural diagram of a laser material module according to an embodiment of the present invention.

Fig. 2 is a second schematic structural diagram of a laser material module according to an embodiment of the present invention.

Fig. 3 is a third schematic structural diagram of a laser material module according to an embodiment of the present invention.

Fig. 4 is a fourth schematic structural diagram of a laser material module according to an embodiment of the present invention.

Fig. 5 is a fifth schematic structural diagram of a laser material module according to an embodiment of the present invention.

Wherein: 1-laser material unit, 2-passive Q-switching material unit, 3-heat dissipation crystal unit, 4-first optical film, 5-second optical film, 6-metal film, 71-module light-in side, 72-module light-out side and 73-module side outer surface.

Detailed Description

Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

The technical solutions in the embodiments of the present patent will be clearly and completely described below with reference to the drawings in the embodiments of the present patent, and it is obvious that the described embodiments are only some embodiments of the present patent, not all embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the patent, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of protection of this patent. The relative arrangement of the components set forth in these embodiments is not intended to be exhaustive unless specifically stated otherwise. The expressions and numerical values do not limit the scope of the present patent. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.

In order to achieve the object of the present invention, in some embodiments of the laser material module for a microwave band solid-state laser, the laser material module for a microwave band solid-state laser includes: laser material unit 1, passively transfer Q material unit 2, first optical film 4 and second optical film 5, first optical film 4 and the relative parallel arrangement of second optical film 5 form the parallel plane chamber, laser material unit 1 and passively transfer Q material unit 2 and arrange in this parallel plane intracavity, and laser material unit 1 arranges in and is close to module income light side 71, passively transfer Q material unit 2 and arrange in and be close to module light-emitting side 72, first optical film 4 plates on module income light side 71 terminal surface, second optical film 5 plates on module light-emitting side 72 terminal surface, laser material unit 1 adopts the Nd: YAG crystal or Nd: YAG ceramics; the passive Q-switching material unit 2 adopts Co: MgAl₂O₄Crystal or Co: MgAl₆O₁₀Crystals or Co₂：LaMgAl₁₁O₁₉Crystalline or Co-doped glass-ceramics.

The laser substance unit 1 of the present invention employs Nd: YAG crystal or Nd: YAG ceramics, which have excellent physicochemical and laser properties, good mechanical and thermal properties, and high gain. Because the laser substance generates larger heat during working, the reasonable heat conduction and heat dissipation design is greatly helpful for improving the laser performance. For crystal or ceramic, the thermal conductivity can change obviously according to the doping concentration, and the thermal conductivity is lower when the concentration is higher. As at normal temperature, 0.5% concentration of Nd: YAG crystal with a thermal conductivity of about 7.8W/m × K (doped YAG and GGG laser crystal thermal conductivity research, laser technique, 2017.04); whereas the thermal conductivity of pure YAG crystal is about 14W/m × K, about high concentration Nd: 2 times of YAG crystal; al (Al)₂O₃The thermal conductivity of the crystals (alumina) was about 25W/m × K. Because the thermal conductivity of the high-concentration laser matrix material is lower than that of the undoped material, the reasonable heat conduction structure has obvious benefits for improving the laser performance. By bonding or the like, in the Nd: one end or two ends of the YAG crystal are connected with a pure YAG crystal with high heat conductivity orPure Al₂O₃The crystal can effectively transfer heat, enhance heat dissipation and improve the working performance of the laser crystal.

When the optical film is selected, the first optical film 4 is ensured to increase the reflection of pump light in a 808nm wave band (R is less than 0.5%) and simultaneously has high reflection of an emergent laser wave band (R is more than 99.5%); the second optical film 5 is partially transmissive to the outgoing laser wavelength (R about 90%). Specifically, for the module with the first optical film 4 being anti-reflection at the wavelength near 808nm, the currently most commonly used LD pump at the wavelength near 808nm can be used, and the module has the advantages of large absorption coefficient and wide absorption bandwidth.

The invention discloses a laser material module for a micron-wave-band solid laser, which comprises: laser material unit 1, passive Q-switched material unit 2, first optical film 4 and second optical film 5 select suitable laser material unit 1 and passive Q-switched material unit 2, can directly go out laser under the semiconductor pumping shines, through the design of parallel plane cavity, can go out the laser of micron wave band such as 1.064um, 1.319um or 1.338 um.

In order to further optimize the implementation effect of the present invention, in other embodiments, the remaining features are the same, except that: one or more heat dissipation crystal units 3, the heat dissipation crystal units 3 are arranged in the parallel plane cavities.

Further, the heat dissipation crystal unit 3 is disposed at the module light incident side 71; or between the module light incident side 71 and two adjacent arbitrary units.

Further, the heat dissipation crystal unit 3 is pure YAG matrix or pure Al₂O₃A substrate.

With the above preferred scheme, when the module comprises: when the crystal unit 3 is cooled, in use, the pump light source enters from the first optical film 4, enters the laser material unit 1 through the cooling crystal unit 3, and exits from the side of the passive Q-switching material unit 2 with the second optical film 5. In order to ensure the compactness of the module structure, the overall sizes of the heat dissipation crystal unit 3, the laser substance unit 1 and the passive Q-switching material unit 2 are controlled within a certain range.

In order to further optimize the implementation effect of the present invention, in other embodiments, the rest of the feature technologies are the same, except that when the unit disposed on the light incident side 71 of the module is the heat dissipation crystal unit 3, the first optical film 4 is plated on the surface of the heat dissipation crystal unit 3;

when the unit arranged on the light incident side 71 of the module is the laser material unit 1, the first optical film 4 is plated on the surface of the laser material unit 1.

In order to further optimize the implementation effect of the present invention, in other embodiments, the remaining features are the same, except that when the unit disposed on the light exit side 72 of the module is the passive Q-switching material unit 2, the second optical film 5 is plated on the surface of the passive Q-switching material unit 2;

when the unit arranged on the light-emitting side 72 of the module is the heat-dissipating crystal unit 3, the second optical film 5 is plated on the surface of the heat-dissipating crystal unit 3.

In order to further optimize the implementation effect of the invention, in other embodiments, the rest of the characteristic techniques are the same, except that for the heat dissipation crystal unit 3, the laser substance unit 1 and the passive Q-switching material unit 2, two adjacent arbitrary units are connected by bonding or gluing.

In order to further optimize the implementation of the invention, in other embodiments, the remaining features are the same, except that a metal film 6 is provided on the module-side outer surface 73, and the metal film 6 is connected to a metal heat sink.

By adopting the preferable scheme, the module side outer surface 73 is plated with the metal film 6, the heat dissipation effect can be improved, and the metal film 6 can be directly connected with the metal heat sink in a welding or silver glue mode and the like, so that the thermal resistance is effectively reduced. The metal film 6 may be, but is not limited to, gold, platinum, or copper.

In order to further optimize the effect of the present invention, in other embodiments, the remaining features are the same, except that the heat dissipating crystal unit 3 is also provided on the module-side outer surface 73.

Further, when the module-side outer surface 73 is provided with the heat dissipation crystal unit 3, the metal film 6 is plated on the surface of the heat dissipation crystal unit 3, and is connected to the metal heat sink through the metal film 6.

By adopting the preferable scheme, the heat dissipation effect is improved.

The use method of the laser material module comprises the following steps: the laser material module is fixed in the metal heat sink, so that the laser material module has good heat conduction and heat dissipation performance with the periphery. According to different film system designs, the module with the anti-reflection function near 808nm coated on the first optical film 4 can emit laser with micron wave bands such as 1064nm, 1319nm or 1338nm under the irradiation of an LD pump with the wavelength near 808nm after passing through a shaping and focusing system. Through the design of the resonator, the module can also emit dual-wavelength laser such as 1319nm/1338nm and the like.

The invention has the following beneficial effects:

the invention discloses a laser material module for a micron-waveband solid laser, which has the advantages of simple design, compact structure, lower cost and convenience for mass production; when in use, the heat dissipation crystal unit 3, the laser substance unit 1, the passive Q-switching material unit 2 and the parallel plane cavity (or called resonant cavity) do not need to be adjusted; due to the Nd: YAG crystal's own excellent performance, supplementary heat conduction through different bonding modes of pure YAG and alumina etc. crystal, and the metal film 6 and the metal heat sink of module side external surface 73 can have excellent low thermal resistance and connect, and this module can realize higher energy output. Through suitable design, can also realize dual wavelength output, have great application prospect in leading edge fields such as terahertz wave.

The various embodiments above may be implemented in cross-parallel.

To better illustrate the advantages of the present application, several specific embodiments are described below.