阅读说明：本技术 半导体结构的制造方法、半导体结构与存储器 (Manufacturing method of semiconductor structure, semiconductor structure and memory ) 是由 张春雷 于 2021-07-09 设计创作，主要内容包括：本公开提供一种半导体结构的制造方法、半导体结构与存储器。该半导体结构的制造方法包括：提供衬底和反应腔室,所述衬底置于反应腔室中；在所述衬底上形成氮化硅层；在所述氮化硅层上形成多晶硅层；其中,在形成所述氮化硅层之后且在形成所述多晶硅层之前,使用解离后的氮气处理所述反应腔室的内表面以及所述氮化硅层的表面,以减少所述氮化硅层表面的氮氢键结。本公开提供的氮化硅层的制造方法,通过氮气解离后形成的氮离子对氮化硅层的表面进行处理,减少了氮氢键结,从而能够提升与多晶硅层的粘附性,避免了黏附在喷头和反应腔体内壁上的薄膜脱落在晶圆上形成的缺陷。(The present disclosure provides a method for manufacturing a semiconductor structure, a semiconductor structure and a memory. The manufacturing method of the semiconductor structure comprises the following steps: providing a substrate and a reaction chamber, wherein the substrate is arranged in the reaction chamber; forming a silicon nitride layer on the substrate; forming a polysilicon layer on the silicon nitride layer; after the silicon nitride layer is formed and before the polycrystalline silicon layer is formed, the inner surface of the reaction chamber and the surface of the silicon nitride layer are treated by dissociated nitrogen to reduce nitrogen-hydrogen bonding on the surface of the silicon nitride layer. According to the manufacturing method of the silicon nitride layer, the surface of the silicon nitride layer is processed through nitrogen ions formed after nitrogen dissociation, nitrogen-hydrogen bonding is reduced, so that the adhesion with a polycrystalline silicon layer can be improved, and the defect that a film adhered to the inner wall of the nozzle and the inner wall of the reaction cavity falls off and is formed on a wafer is avoided.)

1. A method of fabricating a semiconductor structure, comprising:

providing a substrate and a reaction chamber, wherein the substrate is arranged in the reaction chamber;

forming a silicon nitride layer on the substrate;

forming a polysilicon layer on the silicon nitride layer;

after the silicon nitride layer is formed and before the polycrystalline silicon layer is formed, the inner surface of the reaction chamber and the surface of the silicon nitride layer are treated by dissociated nitrogen to reduce nitrogen-hydrogen bonding on the surface of the silicon nitride layer.

2. The method of claim 1, wherein the treating the inner surface of the reaction chamber and the surface of the silicon nitride layer with the dissociated nitrogen gas further comprises:

the nitrogen is bombarded with an inert gas to dissociate the nitrogen.

3. The manufacturing method according to claim 2, wherein the inert gas includes: at least one of argon and helium.

4. The production method according to claim 2 or 3, wherein a flow ratio of the inert gas to the nitrogen gas is 0.2 to 1.

5. The production method according to claim 2 or 3, wherein a flow rate of the inert gas is 5000sccm to 15000sccm, and a flow rate of the nitrogen gas is 15000sccm to 25000 sccm.

6. The method according to claim 2, wherein the inert gas is bombarded with the nitrogen gas by a plasma generating device, and the radio frequency power is 400W-1000W.

7. The method of manufacturing of claim 1, wherein the forming a silicon nitride layer comprises:

forming a silicon nitride layer by a chemical vapor deposition process according to silane, ammonia gas and nitrogen gas; wherein the flow ratio of the silane to the ammonia gas is 1.3-10.

8. The method according to claim 7, wherein the silane is supplied at a flow rate of 200sccm to 500sccm, and the ammonia gas is supplied at a flow rate of 50sccm to 250 sccm.

9. The manufacturing method according to claim 7, wherein a flow rate of the nitrogen gas is 15000sccm to 25000 sccm.

10. The method of manufacturing of claim 1, wherein the forming a silicon nitride layer comprises:

introducing silane, ammonia and nitrogen into the reaction chamber;

after the first preset time, adjusting the radio frequency power of the plasma generating device to a first preset radio frequency power;

after a second preset time, stopping introducing the silane and the ammonia gas to form a silicon nitride layer;

continuously introducing the nitrogen into the reaction chamber and simultaneously introducing inert gas, adjusting the radio frequency power of the plasma generating device to a second preset radio frequency power, bombarding the nitrogen by the inert gas through the plasma generating device, and dissociating the nitrogen;

and treating the inner surface of the reaction chamber and the surface of the silicon nitride layer by using the dissociated nitrogen.

11. The method of manufacturing of claim 10, wherein the forming a silicon nitride layer further comprises:

and after a third preset time, stopping introducing the nitrogen and the inert gas, and adjusting the radio frequency power of the plasma generating device to be zero.

12. The method of claim 10, wherein the first predetermined RF power is the same as the second predetermined RF power.

13. The production method according to claim 10, wherein a flow ratio of the silane to the ammonia gas is 1.3 to 10.

14. A semiconductor structure formed by the manufacturing method of any one of claims 1 to 13.

15. A memory comprising the semiconductor structure of claim 14.

Technical Field

The present disclosure relates to the field of memory manufacturing technologies, and in particular, to a method for manufacturing a semiconductor structure, and a memory.

Background

A capacitor to store data and a transistor to control access to the data stored in the capacitor are typically included in a memory. Specifically, in the manufacturing process of the memory, the structure of the capacitor and the transistor can be formed by stacking a plurality of film layers on a wafer.

At present, in the deposition process of a silicon nitride and polysilicon double-layer film, because the contact surface adhesion of the silicon nitride film and the polysilicon is poor, in the process of performing film deposition in a reaction chamber by a vapor deposition method, films adhered to the walls of a sprayer and the reaction chamber fall off under the action of gravity, so that the defects are formed on a wafer.

It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.

Disclosure of Invention

The purpose of the present disclosure is to provide a method for manufacturing a semiconductor structure, a semiconductor structure and a memory, wherein the surface of a silicon nitride layer is processed by nitrogen ions formed after dissociation of nitrogen, so that nitrogen-hydrogen bonding on the surface of the silicon nitride layer is reduced, adhesion with a polysilicon layer is improved, and a defect that a film adhered to a nozzle and the inner wall of a reaction cavity under the action of gravity drops off on a wafer due to poor adhesion of a contact surface between the silicon nitride layer and the polysilicon layer is avoided.

According to an aspect of the present disclosure, there is provided a method of manufacturing a semiconductor structure, the method of manufacturing the semiconductor structure including:

providing a substrate and a reaction chamber, wherein the substrate is arranged in the reaction chamber;

forming a silicon nitride layer on the substrate;

forming a polysilicon layer on the silicon nitride layer;

after the silicon nitride layer is formed and before the polycrystalline silicon layer is formed, the inner surface of the reaction chamber and the surface of the silicon nitride layer are treated by dissociated nitrogen to reduce nitrogen-hydrogen bonding on the surface of the silicon nitride layer.

In an exemplary embodiment of the present disclosure, the treating the inner surface of the reaction chamber and the surface of the silicon nitride layer with the dissociated nitrogen gas further includes:

the nitrogen is bombarded with an inert gas to dissociate the nitrogen.

In an exemplary embodiment of the present disclosure, the inert gas includes: at least one of argon and helium.

In an exemplary embodiment of the present disclosure, a flow ratio of the inert gas to the nitrogen gas is 0.2 to 1.

In an exemplary embodiment of the present disclosure, the inert gas has a flow rate of 5000sccm to 15000sccm, and the nitrogen gas has a flow rate of 15000sccm to 25000 sccm.

In an exemplary embodiment of the present disclosure, the inert gas is bombarded on the nitrogen gas by a plasma generating device, and the radio frequency power is 400W-1000W.

In an exemplary embodiment of the present disclosure, the forming of the silicon nitride layer includes:

forming a silicon nitride layer by a chemical vapor deposition process according to silane, ammonia gas and nitrogen gas; wherein the flow ratio of the silane to the ammonia gas is 1.3-10.

In an exemplary embodiment of the present disclosure, the silane has a flow rate of 200sccm to 500sccm, and the ammonia gas has a flow rate of 50sccm to 250 sccm.

In an exemplary embodiment of the present disclosure, the flow rate of the nitrogen gas is 15000sccm to 25000 sccm. In an exemplary embodiment of the present disclosure, the forming of the silicon nitride layer includes:

introducing silane, ammonia and nitrogen into the reaction chamber;

after the first preset time, adjusting the radio frequency power of the plasma generating device to a first preset radio frequency power;

after a second preset time, stopping introducing the silane and the ammonia gas to form a silicon nitride layer;

continuously introducing the nitrogen into the reaction chamber and simultaneously introducing inert gas, adjusting the radio frequency power of the plasma generating device to a second preset radio frequency power, bombarding the nitrogen by the inert gas through the plasma generating device, and dissociating the nitrogen;

and treating the inner surface of the reaction chamber and the surface of the silicon nitride layer by using the dissociated nitrogen.

In an exemplary embodiment of the present disclosure, the forming of the silicon nitride layer further includes:

and after a third preset time, stopping introducing the nitrogen and the inert gas, and adjusting the radio frequency power of the plasma generating device to be zero.

In an exemplary embodiment of the present disclosure, the first preset rf power is the same as the second preset rf power.

In an exemplary embodiment of the present disclosure, a flow ratio of the silane to the ammonia gas is 1.3 to 10.

According to another aspect of the present disclosure, there is also provided a semiconductor structure formed by the above-described manufacturing method.

According to still another aspect of the present disclosure, there is also provided a memory including the semiconductor structure described above

According to the manufacturing method of the semiconductor structure, the surface of the silicon nitride layer is processed through nitrogen ions formed after dissociation of nitrogen, nitrogen-hydrogen bonding on the surface of the silicon nitride layer is reduced, adhesion with the polycrystalline silicon layer can be improved, and the defect that a film adhered to the inner wall of the spray head and the reaction cavity falls off on a wafer under the action of gravity due to poor adhesion of the contact surface of the silicon nitride layer and the polycrystalline silicon layer is overcome.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.

Fig. 1 is a flow chart of a method of fabricating a silicon nitride layer according to an embodiment of the present disclosure;

FIG. 2 is a schematic view of a reaction chamber employing a method of fabricating a silicon nitride layer provided;

FIG. 3 is a schematic view of a reaction chamber of a method for fabricating a silicon nitride layer according to the related art;

FIG. 4 is an enlarged view of area A of FIG. 3;

FIG. 5 is a diagram illustrating a comparison between the molecular force between the silicon nitride layer and the polysilicon layer and the molecular force between the silicon nitride layer and the polysilicon layer in the related art;

FIGS. 6-10 are schematic illustrations of a related art fabrication process for forming a semiconductor structure including a silicon nitride layer and a polysilicon layer;

FIGS. 11-15 are schematic views of a manufacturing process for forming a semiconductor structure including a silicon nitride layer and a polysilicon layer according to the present disclosure;

fig. 16 is a graph showing the comparison of the gas and frequency parameters used to form a silicon nitride layer according to the related art and the gas and frequency parameters used to form a silicon nitride layer according to the present disclosure.

Detailed Description

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.

Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.

The terms "a," "an," "the," "said" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.

The embodiment of the present disclosure provides a method for manufacturing a semiconductor structure, as shown in fig. 1, the method for manufacturing a semiconductor structure including:

step S100, providing a substrate and a reaction chamber, wherein the substrate is placed in the reaction chamber;

step S200, forming a silicon nitride layer on the substrate;

step S300, treating the inner surface of the reaction chamber and the surface of the silicon nitride layer by using the dissociated nitrogen to reduce nitrogen-hydrogen bonding on the surface of the silicon nitride layer;

step S400, a polysilicon layer is formed on the processed silicon nitride layer.

In the related art, as shown in fig. 3, 6-10, during the formation of the silicon nitride layer and the polysilicon layer, a silicon nitride layer (SiN)510, a polysilicon layer (a-Si)520, and a seasoning layer (Season film)530 are formed on the inner wall of the reaction chamber and the showerhead, and a film adhered to the inner wall of the showerhead and the reaction chamber by gravity is peeled off to form a defect on the wafer due to poor adhesion of the contact surface of the silicon nitride layer 510 and the polysilicon layer 520.

According to the manufacturing method of the silicon nitride layer provided by the present disclosure, the surface of the silicon nitride layer is processed by the nitrogen ions formed after dissociation of the nitrogen gas, so that the nitrogen-hydrogen bonding on the surface of the silicon nitride layer is reduced, and thus the adhesion between the silicon nitride layer and the polysilicon layer can be improved, as shown in fig. 2, the thin film on the inner wall of the showerhead and the reaction chamber does not fall off the defect formed on the Wafer (Wafer)540,

hereinafter, each step in the method for manufacturing a silicon nitride layer provided by the present disclosure will be described in detail.

In step S100, a substrate and a reaction chamber are provided, and the substrate is placed in the reaction chamber.

Specifically, as shown in fig. 2, a substrate and a reaction chamber are provided, and the substrate is placed in the reaction chamber. The substrate may be the wafer 540 shown in fig. 2.

In step S200, a silicon nitride layer is formed on a substrate.

Specifically, a silicon nitride layer 520 is formed on the wafer 540, and the silicon nitride layer 520 is simultaneously formed on the inner walls of the showerhead and the reaction chamber, and the silicon nitride layer has nitrogen-hydrogen bonds on the surface thereof after formation.

Specifically, the main reactions of silicon nitride layer formation are:

SiH₄+NH₃+e-+N₂→Si-H₃+N-H+N+N₂

N+SiH₃→NH+SiH_x

N-H+SiH_x→Si_xN_y+H₂

the side reactions of silicon nitride layer formation are:

N-H_x+Si-H_x→Si_xN_y-H_z+H₂

the silicon nitride structure is:

the main reaction for forming the polysilicon layer is as follows:

SiH₄+H_e+e^-→Si-H₂+H₂+H_e

Si-H₂+H_e+e^-→Si-H+H₂+H_e

Si-H+H_e+e^-→A-Si+H₂+H_e

the side reactions of the formation of the polysilicon layer are:

SiH₂+H_e+e-→Si-H+H₂+H_e

the polysilicon structure is:

according to the reaction process of the formation of the silicon nitride layer, the reaction process of the formation of the structure and the polycrystalline silicon layer and the structure, it can be seen that in the deposition process of the silicon nitride layer, due to the side reaction, the deposited silicon nitride layer contains a small amount of N-H bonding and Si-H bonding, while in the deposition process of the subsequent polycrystalline silicon layer, the presence of the side reaction can cause the generated polycrystalline silicon film to contain a small amount of Si-H, and according to the principle of similarity and compatibility, as shown in FIG. 5, the intermolecular forces (Van der Waals forces) of two solids with similar structures can be increased; therefore, the silicon nitride layer containing more Si-H bonds is easy to adhere to the polysilicon containing Si-H bonds; on the other hand, the silicon nitride layer contains more N-H bonds and is not suitable for adhering to the Si-H containing polysilicon layer.

Therefore, the main reason for poor adhesion between the silicon nitride layer and the polysilicon layer is that the silicon nitride layer contains a large number of N-H bonds, as shown in fig. 4, the presence of these N-H bonds deteriorates the adhesion between the silicon nitride layer and the polysilicon layer subsequently formed on the surface thereof, and since the adhesion between the silicon nitride layer and the polysilicon layer is poor, during the deposition of a thin film in a reaction chamber by a vapor deposition method, the thin film adhered to the walls of the showerhead and the reaction chamber by gravity drops off, thereby forming defects on the wafer.

In one embodiment of the present disclosure, based on Silane (SiH)₄) Ammonia (NH)₃) With nitrogen (N)₂) Forming a silicon nitride layer by a chemical vapor deposition process; wherein the flow ratio of silane to ammonia is 1.3-10, such as 1.3, 1.33, 1.5, 2, 5, 8 or 10, etc., not to mention; of course, the flow ratio of silane to ammonia can also be less than 1.3 orGreater than 10, which the present disclosure is not limited thereto. By adjusting the flow ratio of silane to ammonia gas to be 1.3-10, the deposition process of the silicon nitride layer is optimized, and N-H bonding in the silicon nitride layer can be reduced.

Wherein the flow rate of silane can be 200sccm to 500sccm, such as 200sccm, 300sccm, 400sccm, or 500sccm, which are not listed herein; of course, the flow rate of silane can also be less than 200sccm or greater than 500sccm, as the present disclosure is not limited thereto.

Wherein the flow rate of the ammonia gas is 50sccm to 250sccm, such as 50sccm, 100sccm, 150sccm, 200sccm, or 250sccm, which are not listed herein; of course, the flow rate of ammonia gas can also be less than 50sccm or greater than 250sccm, as the present disclosure is not limited thereto.

Wherein the flow rate of nitrogen gas can be 15000sccm to 25000sccm, such as 15000sccm, 18000sccm, 20000sccm, 22000sccm or 25000sccm, which are not listed herein; of course, the flow rate of nitrogen can also be less than 15000sccm or greater than 25000sccm, which is not limited by this disclosure.

Wherein, various reaction gases for forming the silicon nitride layer are ejected by the radio frequency chemical vapor deposition method, and the radio frequency power in the reaction process can be 400W-1000W, such as 400W, 500W, 600W, 700W, 800W, 900W or 1000W, etc., which are not listed herein; of course, the rf power may also be less than 400W or greater than 1000W, and the disclosure is not limited thereto.

The present disclosure is based on SiH adjustment₄And NH₃The proportion of the silicon nitride layer and the deposition process are improved, the radio frequency power is adjusted, the formation process of the silicon nitride layer is improved, the adhesion of the double-layer film of the silicon nitride layer and the polycrystalline silicon layer is relatively improved, and the film can not fall off in the deposition process of the polycrystalline silicon layer, so that the surface flaky defects of the double-layer film of the silicon nitride layer and the polycrystalline silicon layer are obviously reduced, and the process reliability is improved.

In step S300, the dissociated nitrogen gas is used to treat the inner surface of the reaction chamber and the surface of the silicon nitride layer to reduce nitrogen-hydrogen bonding on the surface of the silicon nitride layer.

Specifically, the nitrogen is dissociated by the inert gas, and other side reactions generated after the nitrogen is dissociated by the inert gas can be avoided by adopting the inert gas, so that the reliability of the dissociation of the nitrogen is improved. The inert gas may be at least one of argon and helium, for example.

Wherein the flow ratio of the inert gas to the nitrogen is 0.2 to 1, and dissociation of the nitrogen can be preferably achieved by setting the flow ratio of the inert gas to the nitrogen to 0.2 to 1. The flow ratio may be, for example, 0.20, 0.3, 0.5, 0.7, 0.8, 1, etc., which are not listed herein; of course, the flow ratio of inert gas to nitrogen may also be less than 0.2 or greater than 1, and the disclosure is not limited thereto.

Wherein the flow rate of the inert gas is 5000sccm-15000sccm, and the flow rate of the nitrogen gas is 15000sccm-25000 sccm. The flow rate of the inert gas can be, for example, 5000sccm, 8000sccm, 1000sccm, 12000sccm, 15000sccm, etc., which are not listed herein; of course, the flow rate of the inert gas can also be less than 5000sccm or greater than 15000sccm, as the disclosure is not limited thereto. The flow rate of nitrogen gas can be, for example, 15000sccm, 18000sccm, 20000sccm, 22000sccm, 25000sccm, etc., which are not listed herein; of course, the flow rate of nitrogen can also be less than 15000sccm or greater than 25000sccm, and the disclosure is not limited thereto.

Wherein, the flow rate of the inert gas is 5000sccm-15000sccm, and when the inert gas is argon or helium, the flow rate of the argon or helium is 5000sccm-15000 sccm; when the inert gas is the mixed gas of argon and helium, the flow rate of the mixed gas of argon and helium is 5000sccm-15000 sccm; the flow ratio of argon to helium in the mixture of argon and helium may be determined as the case may be, and the present disclosure is not limited thereto.

When the nitrogen is dissociated by the inert gas, the inert gas is bombarded by the plasma generating device, and the radio frequency power of the plasma generating device is 400W-1000W in the treatment process, so that the dissociation effect of the inert gas on the nitrogen is ensured. The rf power may be, for example, 400W, 500W, 600W, 700W, 800W, 900W, or 1000W, which are not listed herein; of course, the rf power may also be less than 400W or greater than 1000W, and the disclosure is not limited thereto.

Specifically, after the nitrogen is dissociated by the inert gas, a plurality of nitrogen ions are formed and react with N-H bonding, so that the number of N-H bonding is reduced, the problem that the adhesion between a silicon nitride layer and a polycrystalline silicon layer formed on the surface of the silicon nitride layer is poor due to the existence of the N-H bonding is avoided, and the defect that a film adhered to the inner wall of the nozzle and the reaction cavity under the action of gravity falls off on a wafer due to the poor adhesion of the contact surface of the silicon nitride layer and the polycrystalline silicon layer is further avoided.

In one embodiment of the present disclosure, as shown in fig. 16, forming the silicon nitride layer includes: continuously introducing silane, ammonia gas and nitrogen gas into the reaction chamber; after a first preset time T₁Then, adjusting the radio frequency power of the plasma generating device to a first preset radio frequency power; passing through a second preset time T₂Then, stopping introducing silane and ammonia gas to form a silicon nitride layer; continuously introducing nitrogen and inert gas into the reaction chamber, adjusting the radio frequency power of the plasma generating device to a second preset radio frequency power, and bombarding the nitrogen by the inert gas through the plasma generating device to dissociate the nitrogen; treating the inner surface of the reaction chamber and the surface of the silicon nitride layer by using the dissociated nitrogen; passing through a third preset time T₃Then, stopping introducing the nitrogen and the inert gas, and adjusting the radio frequency power of the plasma generating device to be zero

The first preset radio frequency power can be the radio frequency power in the process of spraying out various reaction gases for forming the silicon nitride layer by the radio frequency chemical vapor deposition method, and the second preset radio frequency power can be the radio frequency power in the process of bombarding nitrogen by inert gas by the plasma generating device; as shown in fig. 16, since the rf power ranges from Dep1 to plasma purge 400W to 1000W, the first predetermined rf power and the second predetermined rf power may be the same, so as to reduce the adjustment times of the rf power of the plasma generator and improve the efficiency of the manufacturing process.

Wherein the first preset time T₁A second preset time T₂And a third preset time T₃The time required for the respective reaction process, the specific time being as the case may beThe present disclosure is not limited thereto.

Specifically, as shown in fig. 11-15, a first carbon wafer 620 is located on a substrate 610, a silicon nitride layer 510 is formed on the first carbon wafer 620, a polysilicon layer 520 is formed on the silicon nitride layer 510, a second carbon wafer 630 is located on the polysilicon layer 520, a silicon oxide layer 640 is located on the second carbon wafer 630, a photoresist layer 650 is formed on the silicon oxide layer 640, and the lower film layer is etched by an etching material 660 and the patterned photoresist layer 650. As shown in fig. 6-10, in the related art forming process, the polysilicon layer 52 has a peeling film thereon, which affects the subsequent film deposition; as shown in fig. 11 to 15, after the manufacturing method of the silicon nitride layer provided by the present disclosure is applied, the polysilicon layer 52 has no peeling film, so that subsequent film deposition is not affected, the reliability of the process is improved, the yield of the product is improved, the production cost is reduced, and the production efficiency is improved.

Step S400, a polysilicon layer is formed on the processed silicon nitride layer.

Specifically, the compound can be prepared by reacting with Silane (SiH)₄) With helium (H)_e) A polysilicon layer is formed by a chemical vapor deposition process. Other methods of forming the polysilicon layer may be used by those skilled in the art and are not intended to be limiting of the present disclosure.

According to the manufacturing method of the silicon nitride layer, on one hand, the surface of the silicon nitride layer is processed through nitrogen ions formed after dissociation of nitrogen, and the surface of the silicon nitride layer is passivated. Nitrogen-hydrogen bonding on the surface of the silicon nitride layer is reduced, so that the adhesion with a subsequently formed polycrystalline silicon layer can be improved, and the defect that a film adhered to the inner wall of the nozzle and the reaction cavity under the action of gravity falls off on a wafer due to poor adhesion of the contact surface of the silicon nitride layer and the polycrystalline silicon layer is avoided; on the other hand, by adjusting SiH₄And NH₃The deposition process is improved to adjust the radio frequency power, the silicon nitride layer forming process is improved, and the process reliability is further improved.

Implementations of the present disclosure also provide a semiconductor structure formed by the above-described method of fabricating a semiconductor structure. The semiconductor structure provided by the disclosure reduces nitrogen-hydrogen bonding in the silicon nitride layer, thereby improving the adhesion with the polysilicon layer and avoiding the defect that a film adhered to the inner wall of the nozzle and the reaction cavity falls off and forms on a wafer under the action of gravity due to poor adhesion of the contact surface of the silicon nitride layer and the polysilicon layer. For more details and advantages, reference is made to the above description related to the embodiments of the method for manufacturing a semiconductor structure, and further description is omitted here.

Implementations of the present disclosure also provide a memory including the above semiconductor structure. The semiconductor structure can be applied to various memories, such as a computing memory (e.g., DRAM, SRAM, DDR3SDRAM, DDR2SDRAM, DDR SDRAM, etc.), a consumer memory (e.g., DDR3SDRAM, DDR2SDRAM, DDR SDRAM, SDRSDRAM, etc.), a graphics memory (e.g., DDR3SDRAM, GDDR3SDMRA, GDDR4SDRAM, GDDR5SDRAM, etc.), a mobile memory, etc., and the advantageous effects thereof can be found in the above description of the manufacturing method of the semiconductor structure, which is not described herein again.

It should be noted that although the various steps of the methods of the present disclosure are depicted in the drawings in a particular order, this does not require or imply that these steps must be performed in this particular order, or that all of the depicted steps must be performed, to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step execution, and/or one step broken down into multiple step executions, etc.

Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.