Semiconductor element and flow rate measuring device using the same
阅读说明:本技术 半导体元件及使用该半导体元件的流量测定装置 (Semiconductor element and flow rate measuring device using the same ) 是由 石塚典男 小野濑保夫 于 2018-08-06 设计创作,主要内容包括:本发明提供一种半导体装置及热式流体流量传感器,其抑制在铝膜上产生的应变,抑制由铝膜的反复金属疲劳引起的断线。本发明的半导体装置及热式流体流量传感器使硅膜和铝膜的高度在流量传感器部(隔膜端部正上方)部D和电路部(LSI部)D1中为D>D1。(The invention provides a semiconductor device and a thermal fluid flow sensor, which can restrain strain generated on an aluminum film and restrain disconnection caused by repeated metal fatigue of the aluminum film. The semiconductor device and thermal fluid flow sensor of the present invention have the height of the silicon film and the aluminum film in D > D1 in the flow sensor section (directly above the diaphragm end) D and the circuit section (LSI section) D1.)
1. A semiconductor device includes:
a semiconductor substrate having a cavity; and
a laminated portion laminated on the semiconductor substrate,
the laminated portion forms a diaphragm covering the cavity portion,
the laminated part has a silicon film constituting a thermocouple, an aluminum film, and a connecting part connecting the silicon film and the aluminum film,
the connecting portion is provided on the diaphragm,
the semiconductor element is characterized in that it is,
the silicon film is provided on the side of the substrate with respect to the neutral axis of the diaphragm,
the aluminum film is provided at a position opposite to the substrate side of the neutral axis in a portion crossing an end of the diaphragm.
2. A semiconductor device includes:
a semiconductor substrate having a cavity; and
a laminated portion laminated on the semiconductor substrate,
the laminated portion forms a diaphragm covering the cavity portion,
the laminated part has a silicon film constituting a thermocouple, an aluminum film, and a connecting part connecting the silicon film and the aluminum film,
the connecting portion is provided on the diaphragm,
the semiconductor element is characterized in that it is,
the disclosed electric power tool is provided with a circuit unit which is provided with: a transistor disposed outside the diaphragm; a first aluminum layer formed outside the separator in the laminated portion; and a second aluminum layer formed on the upper layer side of the first aluminum layer,
a portion of an aluminum film constituting the thermocouple, which portion crosses an end of the diaphragm, is formed on an upper layer of the first aluminum layer.
3. A semiconductor device includes:
a semiconductor substrate having a cavity; and
a laminated portion laminated on the semiconductor substrate,
the laminated portion forms a diaphragm covering the cavity portion,
the laminated part has a silicon film constituting a thermocouple, an aluminum film, and a connecting part connecting the silicon film and the aluminum film,
the connecting portion is provided on the diaphragm,
the semiconductor element is characterized in that it is,
having a circuit portion including a transistor disposed outside the diaphragm portion,
a distance D in a thickness direction of the silicon film and the aluminum film in the end portion of the diaphragm is larger than a distance D1 in the thickness direction of the transistor and an aluminum film formed directly above the transistor.
4. The semiconductor device according to any one of claims 1 to 3,
the diaphragm portion is formed with an intermediate layer,
the silicon film and the aluminum film are electrically connected via the intermediate layer.
5. The semiconductor element according to claim 2 or 3,
an intermediate layer is formed on the diaphragm on a lower layer side of the aluminum film and on an upper layer side of the silicon film,
the connecting part has a first connecting part and a second connecting part,
the aluminum film and the intermediate layer are connected via a first connection portion,
the intermediate layer and the silicon film are connected via a second connection portion.
6. The semiconductor element according to claim 5,
the intermediate layer is an aluminum film,
the first and second connection portions are through holes,
the height of the through hole connecting the silicon film and the middle layer is the same as the height of the through hole connecting the transistor and the aluminum film right above the transistor.
7. The semiconductor device according to any one of claims 1 to 3,
the aluminum film at the end of the diaphragm portion is provided at a portion where strain is generated to 0.015 or less.
8. The semiconductor device according to any one of claims 1 to 3,
an aluminum film constituting the thermocouple formed directly above the end of the diaphragm is disposed in a second layer from the uppermost layer of the laminated portion.
9. A flow rate measuring device is characterized in that,
a semiconductor device comprising the semiconductor device according to any one of claims 1 to 7.
Technical Field
The present invention relates to a semiconductor element and a flow rate measuring device using the same.
Background
An air flow meter that is installed in an electronically controlled fuel injection device of an internal combustion engine of an automobile or the like and measures intake air is currently used. As a fluid flow sensor used in such an air flow meter, a thermal fluid flow sensor using a heating resistor is mainly used because it can directly detect mass air. Among them, a thermal air flow sensor manufactured by MEMS technology using a semiconductor is attracting attention because it can be driven with low power while reducing manufacturing cost.
As such a technique, for example, there is a technique described in
Disclosure of Invention
Problems to be solved by the invention
A thermocouple-type fluid flow sensor using MEMS technology has a diaphragm structure. The diaphragm of the sensor that measures the flow rate of the air fluid is deformed due to the pressure generated by the flow of the air. As a result of the studies by the present inventors, it was found that when the diaphragm is deformed, stress is repeatedly applied to the aluminum wiring at the end of the diaphragm, metal fatigue is caused, and as a result, breakage is likely to occur.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a thermocouple fluid flow sensor that suppresses strain generated in an aluminum film and suppresses disconnection caused by repeated metal fatigue of the aluminum film.
Means for solving the problems
In order to achieve the above object, a thermocouple fluid flow sensor according to the present invention includes: a semiconductor substrate having a cavity; a laminated portion laminated on the semiconductor substrate; and a thermocouple formed so as to cross an end portion of the diaphragm portion which is a region of the laminated portion covering the hollow portion, wherein the thermocouple includes a silicon film and an aluminum film provided in the laminated portion, and is characterized in that the silicon film is provided on a substrate side with respect to a neutral axis of the diaphragm portion, and the aluminum film is provided on a substrate side with respect to the neutral axis in a portion crossing the diaphragm end portion.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, since the aluminum film as the metal film can be suppressed from being strained, the aluminum film can be suppressed from being broken.
Drawings
Fig. 1 is a plan view in the first embodiment.
Fig. 2 is a sectional view taken along line a-a in the first embodiment.
Fig. 3 is a sectional view taken along line a-a in the second embodiment.
Fig. 4 is a sectional view taken along line a-a in the third embodiment.
Fig. 5 is a diagram showing the operation and effect of the present invention.
Fig. 6 is a graph showing the fatigue strength of the aluminum film in the fourth example.
Fig. 7 is a sectional view taken along line a-a in the first embodiment.
Fig. 8 is a cross-sectional view of the fifth embodiment.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[ first embodiment ]
The flow
The thermocouple fluid flow sensor includes a
The
The aluminum film or silicon film is formed so as to cross the
The fluid flow sensor of the present embodiment is provided with a
Next, a cross-sectional structure will be described with reference to fig. 2. The fluid flow sensor includes a
The fluid flow sensor includes a
Since the
In the present embodiment, the height D of the
Next, the operation and effect of the present embodiment will be described. Fig. 5 is a diagram in which an aluminum film is disposed in a laminated film of a silicon oxide film and a silicon nitride film, and the stress (strain) of the aluminum film when the diaphragm is pressed is analyzed. As analysis conditions, the width of the diaphragm was 500 μm, the thickness of the diaphragm was 1 μm, the applied pressure was 10kPa, and the aluminum film was an elastic plastic material. In fig. 5, (a) shows a case where the aluminum film is closest to the
In the present embodiment, the
The
The
As a more preferable example, the
[ second embodiment ]
Next, a second embodiment will be described with reference to fig. 3. In addition, the same configurations as those of the first embodiment will not be described.
In the second embodiment, the
The
The
The connecting
In the present embodiment, the
In the present embodiment, the
[ third embodiment ]
A third embodiment will be described with reference to fig. 4. In addition, the same configurations as those of the first embodiment will not be described.
In the present embodiment, the
When the height of the
[ fourth embodiment ]
The fourth embodiment will be described with reference to fig. 6. In addition, the same configurations as those in the first to
Fig. 6 is a graph of the fatigue strength (fracture frequency dependence of fracture strain) of the obtained submicron-thickness aluminum film. In order to obtain the fatigue strength of a general bulk material, both ends of the material are repeatedly stretched and determined from the number of passes and the stretching force, but in a sample having a submicron thickness, it is difficult to independently process the single-layer film, and it is necessary to repeatedly stretch both ends of the film, so that the fatigue test itself is very difficult. Therefore, we developed a fatigue strength test method for a submicron-thick film and measured the fatigue strength of an aluminum film. The results are shown in FIG. 6.
The frequency of pulsating pressure from the car is considered to be around 100Hz at maximum. If it is considered that the vehicle is continuously driven for 5 hours, 365 days and 11 years a day, the number of pulses is about
[ fifth embodiment ]
A fifth embodiment of the present invention will be described with reference to fig. 8. In addition, the same configurations as in
The fluid flow sensor of the present embodiment does not integrally form the
In the above embodiments, the fluid flow sensor was described as an example of the semiconductor element including the thermocouple, but the present invention is not limited thereto, and the present invention can be applied to various sensors such as a temperature sensor and a humidity sensor.
The semiconductor element described in each of the embodiments can be applied to a physical quantity measuring device such as a flow rate detecting device for measuring a flow rate of an internal combustion engine or a humidity measuring device for measuring humidity.
Description of the symbols
1 … silicon substrate
2 … diaphragm end
3 … aluminum film
4 … silicon film
5 … connection part
5a … first connection
5b … second connecting part
7 … diaphragm
8 … Circuit section
9 … aluminum pad
10 … diffusion layer
11 … first insulating film
12 … second insulating film
13 … third insulating film
14 … second aluminum film
15 … third aluminium film
16 … fourth insulating film
17 … fifth insulating film
18 … laminate
20 … insulating film
21 … flow rate detecting part
22 … transistor
23 … distance from silicon substrate surface to silicon film surface at circuit part
24 … distance from silicon substrate surface to silicon film surface at flow sensor section
25 … heating resistor body
26 … neutral axis
27 … connection part
28 … silicon film
29 … intermediate aluminium film
30 … connection.
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