High-isolation dual-frequency dual-polarization millimeter wave array antenna

文档序号:117564 发布日期:2021-10-19 浏览:26次 中文

阅读说明:本技术 一种高隔离度双频双极化毫米波阵列天线 (High-isolation dual-frequency dual-polarization millimeter wave array antenna ) 是由 赵鲁豫 何宇奇 吕思涵 刘雨嘉 于 2021-03-25 设计创作,主要内容包括:本发明公开了一种高隔离度双频双极化毫米波阵列天线,由上至下依次包括:周期性金属覆层、寄生天线层、辐射天线层、金属地层;周期性金属覆层设置在阵列天线的上方,是由相同介电常数的介质层和周期性排列的金属图案组成的夹杂材料;寄生天线层上包括至少一个谐振寄生天线单元组成的寄生天线阵列;辐射天线层上包括至少一个多频谐振天线单元组成的辐射天线阵列;金属地层上设有馈电端口,馈电端口通过馈电柱与对应的多频谐振天线单元连接。双层天线结构减小天线尺寸,周期性金属覆层改善天线单元间的隔离度,保证天线的性能。(The invention discloses a high-isolation dual-frequency dual-polarization millimeter wave array antenna, which sequentially comprises the following components from top to bottom: a periodic metal coating, a parasitic antenna layer, a radiation antenna layer, and a metal stratum; the periodic metal coating is arranged above the array antenna and is an inclusion material consisting of dielectric layers with the same dielectric constant and periodically arranged metal patterns; the parasitic antenna layer comprises a parasitic antenna array consisting of at least one resonant parasitic antenna unit; the radiation antenna layer comprises a radiation antenna array consisting of at least one multi-frequency resonance antenna unit; and a feed port is arranged on the metal layer and is connected with the corresponding multi-frequency resonance antenna unit through a feed column. The double-layer antenna structure reduces the size of the antenna, the periodic metal coating improves the isolation between the antenna units, and the performance of the antenna is ensured.)

1. The utility model provides a high isolation dual-frenquency double polarization millimeter wave array antenna which characterized in that includes from top to bottom in proper order: a periodic metal coating, a parasitic antenna layer, a radiation antenna layer, and a metal stratum;

the periodic metal coating is arranged above the array antenna and is an inclusion material consisting of dielectric layers with the same dielectric constant and periodically arranged metal patterns;

the parasitic antenna layer comprises a parasitic antenna array consisting of at least one resonant parasitic antenna unit;

the radiation antenna layer comprises a radiation antenna array consisting of at least one multi-frequency resonance antenna unit;

and a feed port is arranged on the metal stratum and is connected with the corresponding multi-frequency resonance antenna unit through a feed column.

2. The high-isolation dual-frequency dual-polarization millimeter wave array antenna according to claim 1, wherein the periodically arranged metal patterns comprise periodically arranged cross-shaped metal structures.

3. The high-isolation dual-frequency dual-polarization millimeter wave array antenna as claimed in claim 1, wherein the multi-frequency resonant antenna unit is a low-frequency antenna and operates at 26 GHz;

the multi-frequency resonance antenna unit is a microstrip patch antenna and adopts a symmetrical structure that four corners are cut off by square antenna patches.

4. The high-isolation dual-frequency dual-polarization millimeter wave array antenna according to claim 3, wherein the multi-frequency resonant antenna unit adopts two capacitive feed ports.

5. The high-isolation dual-frequency dual-polarization millimeter wave array antenna according to claim 1, wherein the resonant parasitic antenna unit is a high-frequency antenna and operates at 39 GHz;

the resonance parasitic antenna unit comprises an antenna patch with a square groove dug in the middle and four parasitic patches surrounding the periphery of the antenna patch.

6. The high-isolation dual-frequency dual-polarization millimeter-wave array antenna of claim 5, wherein the parasitic patch operates at 41 GHz.

7. The high-isolation dual-frequency dual-polarization millimeter wave array antenna according to any one of claims 1 to 6, wherein a first dielectric plate layer is further included between the parasitic antenna layer and the radiation antenna layer, and a second dielectric plate layer is further included between the radiation antenna layer and the metal ground layer.

Technical Field

The invention belongs to the technical field of wireless communication, and relates to a high-isolation dual-frequency dual-polarization millimeter wave array antenna.

Background

The applied millimeter wave technology is a hot topic of academia and industry, and a millimeter wave frequency band between 24GHz and 86GHz is determined to be used for International Mobile Telecommunications (IMT) in the 2019 world radio communication conference (WRC-19), wherein the design of a mobile phone antenna in the frequency band of 24.25-27.5GHz is paid attention by designers, which simultaneously marks that the global industry makes a solid step towards the maximization of the optimal performance and scale effect of 5G millimeter waves. Compared with the traditional design of Sub-6GHz antenna, the millimeter wave antenna has faster transmission speed and larger bandwidth, so that the design of the millimeter wave antenna in the field of mobile communication is concerned by more and more researchers.

With the development of communication technology, the design of millimeter wave antennas is being researched by more and more scholars, but a single millimeter wave antenna unit cannot meet the requirements of mobile communication, so that a unit antenna array is required to obtain higher gain and larger bandwidth. With the introduction of array antennas, the isolation of antenna arrays is an important indicator, and with the reduction of antenna headroom, the problem of coupling between antenna elements becomes a difficult point. The closer spacing between the antenna units causes the mutual interference to be poor, thereby directly influencing the data throughput rate, and the stronger coupling reduces the energy capable of being effectively radiated, causes the gain reduction of the antenna array and the low energy utilization efficiency; due to the complexity of antenna array design in the implementation stage, how to achieve a better isolation effect of the millimeter wave array antenna in a smaller volume without changing the structure of the antenna unit becomes a problem to be emphasized by designing the millimeter wave array antenna.

Disclosure of Invention

The invention aims to: the high-isolation double-frequency dual-polarization millimeter wave array antenna is provided, and a good isolation effect of the millimeter wave array antenna is achieved in a small volume.

The technical scheme of the invention is as follows: the utility model provides a high isolation dual-frenquency double polarization millimeter wave array antenna, includes from top to bottom in proper order: a periodic metal coating, a parasitic antenna layer, a radiation antenna layer, and a metal stratum; the periodic metal coating is arranged above the array antenna and is an inclusion material consisting of dielectric layers with the same dielectric constant and periodically arranged metal patterns; the parasitic antenna layer comprises a parasitic antenna array consisting of at least one resonant parasitic antenna unit; the radiation antenna layer comprises a radiation antenna array consisting of at least one multi-frequency resonance antenna unit; and a feed port is arranged on the metal stratum and is connected with the corresponding multi-frequency resonance antenna unit through a feed column.

The antenna structure comprises a parasitic antenna layer and a radiation antenna layer, wherein one antenna unit can cover a plurality of millimeter wave frequency bands, the occupied space of the antenna is reduced, and the better performance is realized by the smaller size; meanwhile, the antenna is simple in design process, low in cost, stable in structure, mature in processing technology, high in yield and suitable for large-scale mass production.

The further technical scheme is as follows: the periodically arranged metal pattern includes periodically arranged cross-shaped metal structures.

The cross-shaped metal structure is simple to manufacture, the radiation pattern of the antenna units can be widened by the periodically arranged metal structures, the antenna gain is improved, and the isolation between the antenna units is greatly improved, so that the antenna units are retracted into the distance between the antenna units.

The further technical scheme is as follows: the multi-frequency resonance antenna unit adopts a low-frequency antenna and works at 26 GHz; the multi-frequency resonance antenna unit is a microstrip patch antenna and adopts a symmetrical structure that four corners are cut off by square antenna patches.

The radiation antenna layer of lower floor adopts the microstrip paster antenna of working in 26GHz, adopts the symmetrical formula structure of excision four angles, reduces the antenna paster area occupied, and the symmetrical formula structure is so that microstrip paster antenna works with the cross polarization.

The further technical scheme is as follows: the multi-frequency resonance antenna unit adopts two capacitive feed ports.

The inductance of the coaxial probe can be counteracted by adopting the capacitive feed, the bandwidth is widened, and the orthogonal polarization can be realized by adopting two capacitive feed ports.

The further technical scheme is as follows: the resonant parasitic antenna unit adopts a high-frequency antenna and works at 39 GHz; the resonance parasitic antenna unit comprises an antenna patch with a square groove dug in the middle and four parasitic patches surrounding the periphery of the antenna patch.

The parasitic antenna layer on the upper layer adopts a high-frequency antenna working at 39GHz, better matching and gain are realized by adopting an antenna patch with a square groove dug in the middle, four parasitic patches are designed around the antenna patch, the isolation can be effectively improved, and the high-frequency bandwidth is widened by a new resonant frequency brought by the parasitic patches.

The further technical scheme is as follows: the parasitic patch operates at 41 GHz.

The high frequency band can be widened by a parasitic patch operating at 41 GHz.

The further technical scheme is as follows: and a first dielectric plate layer is further arranged between the parasitic antenna layer and the radiation antenna layer, and a second dielectric plate layer is further arranged between the radiation antenna layer and the metal stratum.

Through printing parasitic antenna layer on first dielectric plate layer, print radiation antenna layer on second dielectric plate layer, use and pile up the design and bond dielectric plate layer and form a whole, reduced the occupied space of antenna greatly.

Drawings

The invention is further described with reference to the following figures and examples:

fig. 1 is a side cross-sectional view of a high-isolation dual-frequency dual-polarization millimeter wave array antenna provided in an embodiment of the present application;

fig. 2 is a schematic diagram of a high-isolation dual-frequency dual-polarization millimeter wave array antenna provided in an embodiment of the present application;

fig. 3 is a partially enlarged view of a high-isolation dual-frequency dual-polarization millimeter wave array antenna provided in an embodiment of the present application;

fig. 4 is a schematic diagram of a resonant parasitic antenna element provided by an embodiment of the present application;

fig. 5 is a schematic diagram of a multi-frequency resonant antenna unit provided by an embodiment of the present application;

fig. 6 is a top view of a superposition of a parasitic antenna layer and a radiating antenna layer provided by an embodiment of the present application;

fig. 7 is a top view of a periodic metal cap layer, a parasitic antenna layer, and a radiating antenna layer stack provided by an embodiment of the present application.

Wherein: 1. a periodic metal coating; 11. a dielectric layer; 12. a metal pattern; 2. a parasitic antenna layer; 21. a resonant parasitic antenna element; 22. an antenna patch; 23. a parasitic patch; 3. a radiating antenna layer; 31. a multi-frequency resonant antenna unit; 32. a capacitive feed port; 4. a metal formation; 41. a feed port; 5. a feed column; 6. a first dielectric slab layer; 7. a second dielectric slab layer; 8. and (5) an adhesive layer.

Detailed Description

Example (b): the mutual coupling and interference between the antenna units in the millimeter wave array antenna system cause the performance degradation of the antenna array, and the requirement for improving the isolation in the array antenna system is mainly expressed as follows: (1) the closer the distance between the antenna units, the worse mutual interference is caused, and the data throughput rate is directly influenced; the strong coupling reduces the energy capable of being effectively radiated, thereby reducing the gain of the antenna array and lowering the energy utilization efficiency; (2) due to the complexity of the antenna array design at present, how to improve the isolation through a simple structure without changing the structure of the antenna unit.

Based on the above-mentioned problem, this application provides a high isolation dual-frenquency double polarization millimeter wave array antenna, combines to refer to fig. 1 to 7, and this high isolation dual-frenquency double polarization millimeter wave array antenna includes from top to bottom in proper order: periodic metal cladding 1, parasitic antenna layer 2, radiating antenna layer 3, metal ground layer 4.

The periodic metal cladding layer 1 is arranged above the array antenna and is an inclusion material consisting of a dielectric layer 11 with the same dielectric constant and a metal pattern 12 which is arranged periodically.

The artificial dielectric plate with high dielectric constant is simulated by designing the periodic metal coating 1, the artificial dielectric plate has high dielectric constant, the periodic metal coating 1 is in an extremely wide frequency range, the effective dielectric constant is much larger than that of a main substrate of an antenna unit, electric waves reflected by the surface of the periodic metal coating 1 are equal in amplitude and opposite in phase to coupling electric waves by adjusting the height of the periodic metal coating 1 from an array antenna and the material characteristics of periodic metal patterns, so that an extra electric wave path is manufactured on the surface of the periodic metal coating 1 to offset the existing coupling, the isolation between the antenna units can be improved to a great extent, and radiation indexes such as gain and matching of an antenna array cannot be damaged.

Alternatively, the periodically arranged metal patterns 12 include periodically arranged cross-shaped metal structures. Illustratively, the cross-shaped metal structure is printed on the dielectric layer 11, and the dielectric layer 11 is fixedly disposed above the antenna array.

Referring collectively to fig. 1-3, the antenna elements use a stacked capacitively coupled patch design.

The parasitic antenna layer 2 includes a parasitic antenna array formed by at least one resonant parasitic antenna unit 21.

Referring to fig. 4 in combination, the resonant parasitic antenna element 21 is a high frequency antenna, and operates at 39 GHz; the resonant parasitic antenna element 21 includes an antenna patch 22 with a rectangular groove cut in the middle and four parasitic patches 23 surrounding the antenna patch 22.

The resonant parasitic antenna unit 21 on the upper layer realizes better matching and gain by digging a square groove in the middle of the patch, the antenna patch 22 with the square groove dug out is used for generating the resonant frequency at 39GHz, and the isolation can be effectively improved by surrounding four parasitic patches 23 designed on the antenna patch 22.

Optionally, the parasitic patch 23 operates at 41 GHz.

The parasitic patch 23 operates at 41GHz and the new resonant frequency it brings broadens the high frequency bandwidth.

The radiation antenna layer 3 includes at least one radiation antenna array formed by multi-frequency resonance antenna units 31.

Referring to fig. 5 in combination, the multi-frequency resonant antenna unit 31 is a low-frequency antenna, and operates at 26 GHz; the multi-frequency resonance antenna unit 31 is a microstrip patch antenna, and adopts a symmetrical structure in which four corners are cut off by a square antenna patch.

The lower multi-frequency resonant antenna element 31 cuts out the four corners of the antenna patch to reduce the occupied area for generating the resonant frequency at 26 GHz.

The multi-frequency resonant antenna element 31 employs two capacitive feed ports 32.

The multi-frequency resonant antenna unit 31 adopts capacitive feed for canceling the inductive property of the coaxial probe, widens the bandwidth, and adopts two capacitive feed ports 32 for realizing orthogonal polarization.

A resonance parasitic antenna unit 21 and a multifrequency resonance antenna unit 31 of upper and lower superpose constitute the antenna element, obtain the effect of dual-frenquency through superimposed double-deck antenna structure for an antenna element covers a plurality of millimeter wave frequency channels, also reduces the occupation space of antenna simultaneously, can make the antenna realize better performance with littleer size, comes the exhibition broad bandwidth through parasitic structure and capacitanc feed structure in addition.

Due to the adoption of the stacked design, the two layers of antenna patches can be respectively adjusted to change the working characteristics in the frequency bands, the lower layer patch antenna (the multi-frequency resonance antenna unit 31) can generate lower resonance frequency, the corresponding electrical length is 0.27 lambda at 26GHz, and the four corners of the square patch are cut off to change the resonance frequency; the upper patch antenna (resonant parasitic antenna element 21) can generate higher resonant frequency, the corresponding electrical length is 0.22 lambda at 39GHz, better matching is realized by cutting the middle square groove, and the gain of the antenna element is improved. The capacitive coupling contributes to widening the bandwidth, but poor isolation of the dual-polarized port is caused, so that the parasitic patches are designed around the upper patch antenna to improve the isolation between the ports, meanwhile, the new resonant frequency generated by the parasitic patches also widens the high-frequency bandwidth, and the corresponding electrical length of the parasitic patches is 0.26 lambda at 41 GHz.

The metal ground layer 4 is provided with a feed port 41, and the feed port 41 is connected with the corresponding multi-frequency resonant antenna unit 31 through the feed column 5.

Optionally, a first dielectric plate layer 6 is further included between the parasitic antenna layer 2 and the radiation antenna layer 3, and a second dielectric plate layer 7 is further included between the radiation antenna layer 3 and the metal layer 4.

For mass production, the diameter of the feed post (feed probe) is designed to be 0.15 mm. Illustratively, the dimensions of the first dielectric slab layer 6, the second dielectric slab layer 7 and the metal ground layer 4 are consistent from both industrial processing and practical cost considerations, with the use of rogowski RT4350 at industry standard thickness for both dielectric slabs, and also with the use of rogowski RO4450F as the adhesive layer 8 for joining the upper and lower dielectric slabs.

Fig. 6 shows a top view of a superposition of the parasitic antenna layer 2 and the radiation antenna layer 3, and fig. 7 shows a top view of a superposition of the periodic metal coating 1, the parasitic antenna layer 2 and the radiation antenna layer 3, for example, the resonant parasitic antenna element 21 on the parasitic antenna layer 2 and the multi-frequency resonant antenna element 31 on the radiation antenna layer 3 form one antenna element, and the distance between two adjacent antenna elements is set to be 5.5 mm. The periodic metal coating 1 is designed above the whole antenna array to widen the radiation pattern of the antenna units, improve the antenna gain, and simultaneously improve the isolation between the antenna units, thereby retracting the distance between the antenna units.

The high-isolation dual-frequency dual-polarization millimeter wave array antenna provided by the application improves the coupling problem caused by too close antenna unit spacing in 5G millimeter wave communication, is applicable to millimeter wave frequency band communication of terminal equipment, and can be well applied to products and systems such as intelligent mobile terminals and wireless routers.

In summary, the high-isolation dual-frequency dual-polarization millimeter wave array antenna provided by the application has the advantages that one antenna unit can cover multiple millimeter wave frequency bands through the dual-layer antenna structure formed by the parasitic antenna layer and the radiation antenna layer, meanwhile, the occupied space of the antenna is also reduced, better performance is realized through smaller size, the periodic metal coating is arranged above the antenna structure, the effective dielectric constant of the periodic metal coating is much larger than that of the main substrate in an extremely wide frequency range, the isolation between the antenna units can be greatly improved by adjusting the height of the periodic metal coating from the array antenna and the characteristics of the periodic metal material, and radiation indexes such as gain and matching of the antenna array cannot be damaged; meanwhile, the antenna is simple in design process, low in cost, stable in structure, mature in processing technology, high in yield and suitable for large-scale mass production.

In addition, the cross-shaped metal structure is simple to manufacture, the radiation pattern of the antenna units can be widened by the periodically arranged metal structures, the antenna gain is improved, the isolation between the antenna units is greatly improved, and therefore the distance between the antenna units is reduced.

In addition, the radiation antenna layer of the lower layer adopts a microstrip patch antenna working at 26GHz, and a symmetrical structure with four corners cut off is adopted, so that the occupied area of the antenna patch is reduced, and the microstrip patch generates orthogonal polarization due to the symmetrical structure.

In addition, the inductance of the coaxial probe can be counteracted by adopting the capacitive feed, the bandwidth is widened, and the orthogonal polarization can be realized by adopting two capacitive feed ports.

In addition, the parasitic antenna layer on the upper layer adopts a high-frequency antenna working at 39GHz, better matching and gain are realized by adopting an antenna patch with a square groove dug in the middle, four parasitic patches are designed around the antenna patch, the isolation can be effectively improved, and the high-frequency bandwidth is widened by the new resonance frequency brought by the parasitic patches.

In addition, the high frequency band can be widened by the parasitic patch operating at 41 GHz.

In addition, the parasitic antenna layer is printed on the first dielectric plate layer, the radiation antenna layer is printed on the second dielectric plate layer, and the dielectric plate layers are bonded to form a whole by using a stacking design, so that the space occupied by the antenna is greatly reduced.

The terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying a number of the indicated technical features. Thus, a defined feature of "first", "second", may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.

The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.

The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

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