阅读说明：本技术 一种微波单片集成超宽带功率放大器 (Microwave monolithic integration ultra-wideband power amplifier ) 是由 刘莹 滑育楠 叶珍 廖学介 吕继平 陈依军 于 2020-05-28 设计创作，主要内容包括：本发明公开了一种微波单片集成超宽带功率放大器,包括共源共栅放大结构、行波放大结构和匹配网络；共源共栅放大结构包括若干组结构相同的共源共栅放大单元,每组共源共栅放大单元均与行波放大结构连接；匹配网络包括输入匹配网络和输出匹配网络,输入匹配网络通过行波放大结构及共源共栅放大单元与输出匹配网络连接。本发明采用共源共栅结构和行波放大结构相结合的技术,解决了多个放大管级联时功耗较大,且工作带宽有限、高频增益难提高等问题；其中的行波放大结构能在很宽的频带范围内提供较好的增益,同时兼顾噪声系数和输出功率；共源共栅放大结构通过两个晶体管的漏极与源极相连,使放大器具有高增益、高输出和高反向隔离等优点。(The invention discloses a microwave monolithic integration ultra-wideband power amplifier, which comprises a cascode amplification structure, a traveling wave amplification structure and a matching network, wherein the cascode amplification structure is connected with the traveling wave amplification structure; the cascade amplification structure comprises a plurality of groups of cascade amplification units with the same structure, and each group of cascade amplification units is connected with the traveling wave amplification structure; the matching network comprises an input matching network and an output matching network, and the input matching network is connected with the output matching network through the traveling wave amplification structure and the cascode amplification unit. The invention adopts the technology of combining the cascode structure and the traveling wave amplification structure, and solves the problems of larger power consumption, limited working bandwidth, difficult improvement of high-frequency gain and the like when a plurality of amplification tubes are cascaded; the traveling wave amplification structure can provide better gain in a wide frequency band range, and simultaneously gives consideration to noise coefficient and output power; the cascode amplification structure is connected with the source electrode through the drain electrodes of the two transistors, so that the amplifier has the advantages of high gain, high output, high reverse isolation and the like.)

1. A microwave monolithic integration ultra-wideband power amplifier is characterized by comprising a cascode amplification structure, a traveling wave amplification structure and a matching network;

the cascode amplification structure comprises a plurality of groups of cascode amplification units with the same structure, and each group of cascode amplification units is connected with the traveling wave amplification structure; the matching network comprises an input matching network and an output matching network, the input matching network is connected with the output matching network through a traveling wave amplification structure and a cascode amplification unit, the input end of the input matching network is used as the input end of the ultra-wideband power amplifier, and the output end of the output matching network is used as the output end of the ultra-wideband power amplifier.

2. The microwave monolithically integrated ultra-wideband power amplifier of claim 1, wherein each set of cascode cells comprises a cascode network, a gate-to-ground network, and an RC equalization network;

the cascode amplifying network comprises a cascode amplifying tube, the grid of the cascode amplifying tube is connected with one end of a balancing resistor and one end of a balancing capacitor in the RC balancing network, the other end of the equalizing resistor and the other end of the equalizing capacitor are used as the input end of the cascode amplifying unit and are connected with the traveling wave amplifying structure, the source electrode of the common source amplifying tube is grounded, the drain electrode of the common source amplifying tube is connected with the source electrode of the common gate amplifying tube through a microstrip line, the grid of the common-grid amplifying tube is connected with one end of a second resistor in the grid-to-ground network, one end of a decoupling capacitor and the traveling wave amplifying structure through a first resistor, the other end of the second resistor is connected with a grounding capacitor, the other end of the decoupling capacitor is grounded, and the drain electrode of the common-gate amplifying tube is used as the output end of the cascode amplifying unit and is connected with the traveling wave amplifying structure.

3. The microwave monolithically integrated ultra-wideband power amplifier of claim 2, wherein the traveling wave amplification structure comprises a traveling wave structure grid line, a traveling wave structure drain line, a gate absorption network, a drain absorption network, and a gate voltage divider network;

the input end of the traveling wave structure grid line is connected with the output end of the input matching network, the branch output end of the traveling wave structure grid line is connected with the input end of each cascode amplifying unit, the output end of the traveling wave structure grid line is connected with the grid absorbing network, the input end of the traveling wave structure drain line is connected with the drain absorbing network, the branch input end of the traveling wave structure drain line is connected with the output end of each cascode amplifying unit, and the output end of the traveling wave structure drain line is connected with the output matching network.

4. The microwave monolithic integrated ultra-wideband power amplifier according to claim 3, wherein the traveling wave structure gate line comprises a plurality of first microstrip lines connected in sequence, wherein an input end of the first microstrip line is connected to an output end of the input matching network, an output end of the last microstrip line is connected to the gate absorbing network, and every two first microstrip lines are connected to an input end of a set of cascode amplifying units as a branch output end of the traveling wave structure gate line;

the traveling wave structure drain line comprises a plurality of second microstrip lines which are connected in sequence, wherein the input end of the first second microstrip line is connected with the drain electrode absorption network, the output end of the last second microstrip line is connected with the input end of the output matching network, and the branch input end of the traveling wave structure drain line between every two second microstrip lines is connected with the output ends of a group of cascode amplification units.

5. The microwave monolithically integrated ultra-wideband power amplifier of claim 4, wherein the gate absorption network is further connected to a first filter network;

the grid absorption network comprises a first absorption resistor and a first absorption grounding capacitor which are sequentially connected, one end of the first absorption resistor is respectively connected with the output end of the last first microstrip line in the grid line of the traveling wave structure and one end of a first filter resistor in the first filter network, and the other end of the first filter resistor is respectively connected with a power supply and the first decoupling grounding capacitor;

the drain electrode absorption network comprises a second absorption resistor and a second absorption grounding capacitor which are sequentially connected, one end of the second absorption resistor is respectively connected with the input end of a first microstrip line in the leakage line of the traveling wave structure and the grid voltage division network, and the other end of the second absorption resistor is connected with the grounding second absorption capacitor;

the grid voltage division network comprises a first voltage division resistor and a second voltage division resistor, one end of the first voltage division resistor is connected with one end of the second absorption resistor, the other end of the first voltage division resistor is connected with one end of the second voltage division resistor, the other end of the first voltage division resistor is connected with one end of the second resistor and one end of the decoupling capacitor in the grid-to-ground network in each cascode amplification unit through a resistor, and the other end of the second voltage division resistor is grounded.

6. The microwave monolithic integrated ultra-wideband power amplifier according to claim 4, wherein the input matching network comprises an input matching capacitor, one end of the first matching capacitor is used as an input end of the input matching network, and the other end of the input matching capacitor is connected to an open-circuit microstrip line and connected to an input end of a first microstrip line in the gate line of the traveling wave structure;

the output matching network is also connected with a second filter network; the output matching network comprises an output matching capacitor, one end of the output matching capacitor is used as the output end of the output matching network, the other end of the output matching capacitor is connected with the output end of the last second microstrip line in the leaky line of the traveling wave structure and is connected with a second decoupling ground capacitor and one end of a second filter resistor in a second filter network through a choke inductor, the other end of the second filter resistor is connected with a third decoupling ground capacitor, and one end of the second filter resistor is connected with a power supply.

7. The microstrip monolithically integrated ultra-wideband power amplifier of claim 5, wherein the cascode amplification structure comprises 5 sets of cascode amplification elements.

Technical Field

The invention belongs to the technical field of power amplifiers, and particularly relates to a microwave monolithic integrated ultra-wideband power amplifier.

Background

With the rapid development of communication technology in various aspects of the world and the continuous expansion of the coverage field of military combat systems, the ultra-wideband communication backbone (UWB) occupies an important position in the communication field due to its own special advantages. At present, the ultra-wideband communication technology is mainly applied to the fields of radars, communication, electronic countermeasure and the like, especially in recent years, the rapid development of the radar technology results in the generation of many new-system radars, such as source-controlled array radars, electronic communication integrated radars and the like, which all need a power-developed device with the characteristics of high efficiency, high power, ultra-bandwidth and the like. With the wide application of the ultra-wideband technology in the communication field, the ultra-wideband power amplifier gradually leaves the way in the power amplifier family, and because the ultra-wideband power amplifier has the characteristics of wide frequency range, high-speed transmission, high secrecy, strong penetrability and the like, the ultra-wideband power amplifier becomes a great trend in the development of the power amplifier.

The traditional microwave monolithic integration super bandwidth power amplifier design method is to directly cascade a plurality of transistors, but the working current of the cascade of the plurality of transistors is the sum of several transistors, so the power consumption is larger; and the working bandwidth of the direct cascade of a plurality of transistors is limited, the high-frequency gain is difficult to improve, and the design difficulty of the positive slope of the gain is higher.

In addition, the main obstacle in designing a wideband amplifier at present is that the gain of any active device has a gradually decreasing characteristic at the high frequency end due to the constraint of the gain-bandwidth product of the active device, and the reverse gain increases in addition to the decrease in the forward gain, which further decreases the overall gain of the amplifier and increases the possibility that the device will enter an oscillation state. Meanwhile, the output power of the transistor is reduced at high frequency, and in order to increase the output power, a larger transistor is often used, and the operating current of the larger transistor is larger.

Disclosure of Invention

Aiming at the defects in the prior art, the microwave monolithic integration ultra-wideband power amplifier provided by the invention solves the problems that the power consumption is larger, the working bandwidth is limited and the high-frequency gain is difficult to improve when a plurality of amplifying tubes are cascaded in the existing ultra-wideband power amplifier.

In order to achieve the purpose of the invention, the invention adopts the technical scheme that: a microwave monolithic integration ultra-wideband power amplifier comprises a cascode amplification structure, a traveling wave amplification structure and a matching network;

the cascode amplification structure comprises a plurality of groups of cascode amplification units with the same structure, and each group of cascode amplification units is connected with the traveling wave amplification structure; the matching network comprises an input matching network and an output matching network, the input matching network is connected with the output matching network through a traveling wave amplification structure and a cascode amplification unit, the input end of the input matching network is used as the input end of the ultra-wideband power amplifier, and the output end of the output matching network is used as the output end of the ultra-wideband power amplifier.

Further, each group of cascode amplifying units comprises a cascode amplifying network, a grid-to-ground network and an RC equalizing network;

the cascode amplifying network comprises a cascode amplifying tube, the grid of the cascode amplifying tube is connected with one end of a balancing resistor and one end of a balancing capacitor in the RC balancing network, the other end of the equalizing resistor and the other end of the equalizing capacitor are used as the input end of the cascode amplifying unit and are connected with the traveling wave amplifying structure, the source electrode of the common source amplifying tube is grounded, the drain electrode of the common source amplifying tube is connected with the source electrode of the common gate amplifying tube through a microstrip line, the grid of the common-grid amplifying tube is connected with one end of a second resistor in the grid-to-ground network, one end of a decoupling capacitor and the traveling wave amplifying structure through a first resistor, the other end of the second resistor is connected with a grounding capacitor, the other end of the decoupling capacitor is grounded, and the drain electrode of the common-gate amplifying tube is used as the output end of the cascode amplifying unit and is connected with the traveling wave amplifying structure.

Furthermore, the traveling wave amplification structure comprises a traveling wave structure grid line, a traveling wave structure drain line, a grid absorption network, a drain absorption network and a grid voltage division network;

the input end of the traveling wave structure grid line is connected with the output end of the input matching network, the branch output end of the traveling wave structure grid line is connected with the input end of each cascode amplifying unit, the output end of the traveling wave structure grid line is connected with the grid absorbing network, the input end of the traveling wave structure drain line is connected with the drain absorbing network, the branch input end of the traveling wave structure drain line is connected with the output end of each cascode amplifying unit, and the output end of the traveling wave structure drain line is connected with the output matching network.

Furthermore, the traveling wave structure gate line comprises a plurality of first microstrip lines which are connected in sequence, wherein the input end of the first microstrip line is connected with the output end of the input matching network, the output end of the last microstrip line is connected with the gate absorption network, and a branch output end serving as the traveling wave structure gate line between every two first microstrip lines is connected with the input ends of a group of cascode amplification units;

the traveling wave structure drain line comprises a plurality of second microstrip lines which are connected in sequence, wherein the input end of the first second microstrip line is connected with the drain electrode absorption network, the output end of the last second microstrip line is connected with the input end of the output matching network, and the branch input end of the traveling wave structure drain line between every two second microstrip lines is connected with the output ends of a group of cascode amplification units.

Further, the grid absorption network is also connected with the first filter network;

the grid absorption network comprises a first absorption resistor and a first absorption grounding capacitor which are sequentially connected, one end of the first absorption resistor is respectively connected with the output end of the last first microstrip line in the grid line of the traveling wave structure and one end of a first filter resistor in the first filter network, and the other end of the first filter resistor is respectively connected with a power supply and the first decoupling grounding capacitor;

the drain electrode absorption network comprises a second absorption resistor and a second absorption grounding capacitor which are sequentially connected, one end of the second absorption resistor is respectively connected with the input end of a first microstrip line in the leakage line of the traveling wave structure and the grid voltage division network, and the other end of the second absorption resistor is connected with the grounding second absorption capacitor;

the grid voltage division network comprises a first voltage division resistor and a second voltage division resistor, one end of the first voltage division resistor is connected with one end of the second absorption resistor, the other end of the first voltage division resistor is connected with one end of the second voltage division resistor, the other end of the first voltage division resistor is connected with one end of the second resistor and one end of the decoupling capacitor in the grid-to-ground network in each cascode amplification unit through a resistor, and the other end of the second voltage division resistor is grounded.

Furthermore, the input matching network comprises an input matching capacitor, one end of the first matching capacitor is used as the input end of the input matching network, and the other end of the input matching capacitor is connected with an open-circuit microstrip line and is connected with the input end of a first microstrip line in the grid line of the traveling wave structure;

the output matching network is also connected with a second filter network; the output matching network comprises an output matching capacitor, one end of the output matching capacitor is used as the output end of the output matching network, the other end of the output matching capacitor is connected with the output end of the last second microstrip line in the leaky line of the traveling wave structure and is connected with a second decoupling ground capacitor and one end of a second filter resistor in a second filter network through a choke inductor, the other end of the second filter resistor is connected with a third decoupling ground capacitor, and one end of the second filter resistor is connected with a power supply.

Further, the cascode structure includes 5 sets of cascode cells.

The invention has the beneficial effects that:

(1) the invention adopts the technology of combining the cascode structure and the traveling wave amplification structure, and solves the problems of larger power consumption, limited working bandwidth, difficult improvement of high-frequency gain and the like when a plurality of amplification tubes are cascaded;

(2) the traveling wave amplification structure can provide better gain in a wide frequency band range, and simultaneously gives consideration to the noise coefficient and the output power;

(3) the cascode amplification structure of the invention connects the drain electrode and the source electrode of the two transistors, so that the amplifier has the advantages of high gain, high output, high reverse isolation and the like, and the gain of the amplifier can be realized between a primary circuit and a secondary circuit while the bandwidth of the amplifier is improved.

Drawings

Fig. 1 is a circuit structure topological diagram of a microwave monolithic integrated ultra-wideband power amplifier provided by the invention.

Detailed Description

The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.