阅读说明：本技术 变流器部件和这种变流器部件的半导体模块 (Converter component and semiconductor module of such a converter component ) 是由 R.库施 于 2018-10-09 设计创作，主要内容包括：本发明涉及一种用于具有驱动电机(4)的机动车的变流器部件,其中所述变流器部件(2)具有多重利用的电力电子组件(T1,T2),所述电力电子组件可选地要么有助于驱动变换器的功能,要么在提供用于运行所述驱动电机(4)的峰值功率时有助于功率调整器(1)的功能。(The invention relates to a converter component for a motor vehicle having a drive motor (4), wherein the converter component (2) has a multi-use power electronics assembly (T1, T2) which optionally contributes either to the function of a drive converter or to the function of a power regulator (1) when peak power is available for operating the drive motor (4).)

1. A converter component for a motor vehicle having a drive motor (4), wherein the converter component (2) has a multi-use power electronics assembly (T1, T2) which optionally contributes either to the function of driving the converter or to the function of a power regulator (1) when peak power is available for operating the drive motor (4).

2. The converter component of claim 1, wherein the multi-utilized power electronic assembly comprises an anti-parallel circuit of two power switches (T1, T2).

3. The converter component of claim 1 or 2, further having a series circuit of two power switches (M1, M2) which optionally contribute to a two-level drive converter function or to a three-level drive converter function, wherein the converter component (2) operates as a three-level drive converter during the function of the multi-utilized power electronic assembly (T1, T2) contributing to a drive converter.

4. The converter component according to any of claims 1 to 3, wherein the converter component (2) further has a boost assembly (B4) which contributes to the function of the power regulator (1) in providing peak power and base power for operating the drive motor (4).

5. The converter component according to claim 4, wherein the boost assembly (B4) comprises a power switch (M3), a first diode (D6) connected in parallel with the power switch (M3), and a second diode (D7) connected in series with the power switch (M3) and with the first diode (D6).

6. The converter component according to claim 4 or 5, wherein the multi-utilized power electronic assembly (T1, T2) and the boost assembly (B4) are integrated into a semiconductor module (20a) based on an A-NPC design, wherein the boost assembly (B4) is connected in parallel with a series circuit of two power switches (M1, M2).

7. The converter component according to any of the preceding claims, wherein the multi-utilized power electronic assembly (T2, T3) is coupled with controllable contactors (6a, 6b, 6c) which, depending on the control, operate the multi-utilized power electronic assembly (T1, T2) either in the function of driving the converter or in the function of a power regulator (1) when peak power is supplied_。

8. The converter component according to any of the preceding claims, wherein the multi-utilized power electronic assembly (20a) is couplable with a smoothing choke (S4) and/or a diode (D3).

9. A semiconductor module for a converter component, wherein the semiconductor module (21a) is designed with two series-connected power switches (M1, M2) and two anti-parallel power switches (T1, T2) according to an a-NPC design, and also with a voltage boosting assembly (B4) which is connected in parallel with the two series-connected power switches (M1, M2).

10. Semiconductor switch according to claim 9, wherein the two anti-parallel power switches (T1, T2) are connected with a center Tap (TN) of the semiconductor module (21a) and are also connected with an additional module tap (Tout1) of the semiconductor module (21a), and wherein the semiconductor module (21a) further has a diode (D3) and a further module tap (Tout3), wherein the diode (D3) is connected on the cathode side with a positive connection terminal (POS) of an intermediate circuit and on the anode side with the further module tap (Tout 3).

Technical Field

The present invention relates to a converter component for a motor vehicle having a drive motor, in particular for the efficient management of the energy of an electric drive train, and to a semiconductor module of such a converter component.

Background

Nowadays, motor vehicles with a drive motor usually have a drive converter in order to convert the dc voltage of the traction battery into an ac voltage for operating the drive motor. Furthermore, a power regulator may be provided to charge the traction battery or boost the drive motor by means of a fuel cell, a boost battery, or the like.

In the framework of cost, space and weight savings, methods are recently sought to make multiple use of a single circuit element. For example, DE 102009052680 a1 describes a charging device for a vehicle battery, which, in addition to an electric motor having a drive converter, also has a step-down converter for reducing an input dc voltage. In this case, the drive converter and the electric motor together function as a boost converter for the braked electric motor. DE 102014217703 a1 discloses a similar charging device. The charging device therefore involves integrating power electronics into the drive motor.

However, for future drives with high performance requirements at the same efficiency and economy, there is a conflict between the required base power (continuous power) and the required peak power (peak power), which must be supplied to the electric drive through a high voltage topology. Here, the short power boost and the dc fast charge are the determining parameters of the peak power. From the design point of view of high voltage topologies and electric drives or battery systems, it may be advantageous to switch to higher voltages (800V), which a dc fast charging network or an additional power supply (typically 400V) may not support. A power regulator is therefore required.

Disclosure of Invention

The object of the invention is to provide a converter component and a semiconductor module which make it possible to design a power regulator in a volume, weight and cost-optimized manner and to supply the basic power or the peak power as required.

The above-mentioned object is achieved by a converter component according to the invention according to claim 1 and a semiconductor module according to the invention according to claim 9.

According to a first aspect, the invention relates to a converter component for a motor vehicle having a drive motor, wherein the converter component has a multi-use power electronics assembly which optionally contributes to the function of either the drive converter or the power regulator when peak power is available for operating the drive motor.

According to a second aspect, the invention relates to a semiconductor module for a converter component, wherein the semiconductor module is designed with two series-connected power switches and two anti-parallel power switches according to an a-npc (advanced Neutral Point clamped) design, and further has a boost assembly connected in parallel with the two series-connected power switches.

Further advantageous embodiments of the invention result from the dependent claims and the following description of preferred embodiments of the invention.

The invention relates to a converter component for a motor vehicle having a drive motor, for example for a Plug-in hybrid vehicle (PHEV), a Battery Electric Vehicle (BEV), a Fuel Cell Electric Vehicle (FCEV), or another motor vehicle having a drive motor. The drive motor may be a conventional electric motor, which has in particular exactly one winding per phase. Preferably, the electric motor does not have a center tap and/or a parking brake.

The converter component, which may also be referred to as a drive converter or a drive converter, has a multi-use power electronics module, for example one or more multi-use power electronics components or modules. The multiple utilization of power electronics optionally or advantageously drives the converter function (drive converter function,) Or to assist the function of the power regulator when providing peak power for operating the drive motor (power booster function,). Here, when the power required to drive the motor is greater than the basic power, a peak power (peak power) may occur. The required power is necessary in particular in short power boosts. For example, the peak power may occur when the required power exceeds a power threshold, which is larger than the base power, preferably by a few percentage points.

The drive converter thus integrates at least partially the necessary power regulator, so that integration of the power electronics module in a volume, weight and cost-optimized manner can be achieved. In contrast to the integration of power electronics into the drive motor, the invention provides a converter module for power distribution for energy management which makes optimal use of the power electronics module used.

In some embodiments, the multi-utilized power electronic component may include an anti-parallel circuit of two power switches (anti-parallel power switches). The two anti-parallel power switches may be transistors, for example IGBTs such as Si-IGBTs or Wide-Bandgap semiconductors (Wide-Bandgap-MOSFETs) such as SiC-MOSFETs. The two antiparallel power switches are used in their drive converter function for operating the converter component as a drive converter and in their power booster function for raising the converter component in the peak load range. For example, two anti-parallel power switches support an external power regulator in power boost, or two anti-parallel power switches form part of an integrated power regulator that facilitates power boost. Thus, the various components of the power regulator supporting power boost are integrated into the converter component. If necessary, components of the power regulator which provide the primary power can also be integrated into the converter component.

In some embodiments, the converter component may also have a series circuit of two power switches (power switches in series), which optionally facilitates a two-level drive converter function or a three-level drive converter function. The converter component can operate as a three-level drive converter during the function of the multi-utilized power electronics assembly to help drive the converter. The converter component can operate as a two-level drive converter and help support power boost during the power regulator functions when the multi-utilized power electronics assembly helps provide peak power. During driving, the converter component can support the power regulator using multiple power electronic components, which may be external power regulators or may be a partially or fully integrated power regulator. The multi-utilized power electronics assembly may still contribute to the power booster function even if the drive motor is not braking.

The two series connected power switches may also optionally contribute to a first and a second multilevel function, for example optionally to a (n-1) level driven converter function or to an n level driven converter function, where n is larger than 3. Multi-level or three-level converters for driving only cause small harmonic losses of the drive motor in the form of iron and copper losses, as well as a distribution and minimization of the switching losses, and a small dU/dt.

The two series-connected power switches may be transistors, for example IGBTs such as Si-IGBTs or wide bandgap semiconductors such as SiC-MOSFETs. Wide bandgap semiconductors allow significantly higher switching frequencies and reduced losses than Si-IGBTs. Thus, the wide bandgap semiconductor is integrated into the converter component, thereby forming a Si/SiC hybrid system. In case of using a wide bandgap semiconductor, the power booster function can be realized by significantly increasing the switching frequency. This allows a significant reduction in the size and weight of the external power regulator, in particular its choke, or of the components of the converter component in the case of an integrated power regulator. The power regulator may include other modules having wide bandgap semiconductors, such as SiC power switches.

For example, the power required during the average driving cycle (base power) can be covered by an external, highly integrated multiphase power regulator, while a part of the existing power electronics from the converter components can be used additionally, i.e. in parallel, for peak power and fast charge boosting. For this purpose, the converter components can comprise contactors, so that they can be controlled in the case of the less efficient two-level operation, while the remaining power electronic switches and chokes are used for additional power regulation. For the "boost-while-running" operating mode, short-term increased losses in the drive motor can be accepted by the two-level pulse mode. So that the boost power can cover the entire system. Thus, an external highly integrated multiphase power regulator can be designed to be small and only to cover the base load. During charging (charging step-up for the 400/800V system), the drive motor is preferably at a standstill, and the multiply utilized power electronics of the converter component can be used via a choke for charging a battery connected in parallel with the external power regulator.

In some embodiments, the converter component may also have a boost assembly that facilitates the function of the power regulator in providing peak power and base power for operating the drive motor. Thus, a power regulator designed to cover the base load may be partially or fully integrated into the converter components. The converter assembly may also have a plurality of boost assemblies, preferably n x 3 boost assemblies, where n is a natural number.

In some embodiments, the boost component may include a power switch, a first diode connected in parallel with the power switch, and a second diode connected in series with the power switch and the first diode. The power switch may be a transistor, preferably a wide bandgap semiconductor, such as a SiC-MOSFET.

In some embodiments, a multi-utilized power electronic component and a boost component may be integrated into a semiconductor module, for example, based on an a-NPC design, where the boost component is connected in parallel with a series circuit of two power switches. The semiconductor module is further described in detail below. Alternatively, the multi-utilized power electronic components and the voltage boosting components are integrated into a semiconductor module designed based on T-NPC (T-type) for example.

The converter component according to the invention, optionally in combination with an external power regulator, is preferably designed to connect the 800V high-voltage topology of the drive train to the existing 400V fast-charging network. Alternatively, the drive train may also be applied in a 400V high voltage topology, or an 800V high voltage topology of the drive train is connected to an 800V fast charge network.

In some embodiments, the multi-utilized power electronic components may be coupled with controllable contactors that operate the multi-utilized power electronic components in accordance with a control, either in the function of driving the converter or in the function of a power regulator when peak power is provided. Furthermore, the multi-utilized power electronic component may be coupled with a further contactor that connects the multi-utilized power electronic component with the zero tap when the multi-utilized power electronic component is operating in a function of driving the converter, and with the voltage input of the boost battery, the fuel cell, the range extender and/or the charging station when the multi-utilized power electronic component is operating in a function of the power regulator when peak power is provided.

In some embodiments, the multi-utilized power electronics components may be coupled with a smoothing choke and/or a diode. In power booster operation, smoothing chokes and diodes are used in particular to regulate the peak power. The boost assembly may be coupled with a choke that facilitates providing the primary power.

Preferably, the function of the power regulator in the provision of peak power is provided for the power conversion of a boost battery, in particular for the power conversion of a high-power boost battery or a supercapacitor, a fuel cell, in particular a range extender and/or a charging station with a small internal combustion engine. The converter component can be designed such that the function of the power regulator can optionally be used for the step-up conversion of the power of the dc charging moduleOr may be used to boost the power of a battery, fuel cell and/or range extender.

The control of the converter components and the external power regulators and the converter components with integrated power regulators can be carried out by a common control unit. Thus, drivers, connectors, sensors and software can be used for all modes. The resonance and vibration effects can be controlled more easily in this way, since a common control platform with matched sampling rates, control parameters and circuit bandwidth can be selected in a targeted manner and set depending on the operating point.

In summary, the invention provides a converter module for power distribution for energy management that makes optimal use of the power electronics modules used, which is characterized by low losses and at the same time is optimized in terms of its size and cost. In this way, the required passive components, such as intermediate circuit capacitors, chokes, busbars, electromagnetic compatibility (EMV), can be reduced) Filters, etc.

The invention further relates to a semiconductor module for a converter component, wherein the semiconductor module is designed with two series-connected power switches and two anti-parallel power switches according to an a-NPC design, and with a step-up assembly, which is connected in parallel with the two series-connected power switches.

Preferably, the two antiparallel power switches are connected to the center tap of the semiconductor module and, in addition, to an additional module tap. In this way, the semiconductor module can be operated in two different operating modes. For example, the semiconductor module operates either as a conventional three-level module designed according to the a-NPC or in a two-level mode of operation with an additional power booster function. The change between the two operating modes can be effected, for example, by providing the semiconductor module with a further additional module tap, which is connected to the center of the two IGBTs connected in series, so that the change between the two operating modes can be effected by contacting an external controllable contactor to the two additional module taps. The center tap can be coupled to an external controllable contactor that connects either the anti-parallel power switch to the zero (in the drive converter function) or the negative connection (in the power booster function).

The boost component may include a power switch, a first diode connected in parallel with the power switch, and a second diode connected in series with the power switch and the first diode. The boost assembly may have an additional module tap between the power switch and the second diode of the boost assembly. Furthermore, the power switch may be connected to the negative connection of the intermediate circuit, and the second diode may be connected on the cathode side to the positive connection of the intermediate circuit.

The power switches of the semiconductor module may be transistors, for example IGBTs such as Si-IGBTs or wide bandgap semiconductors such as SiC-MOSFETs. Preferably, the two anti-parallel power switches are Si-IGBTs, and the power switches of the two series-connected power switches and boost assembly are SiC-MOSFETs. This can achieve an increase in switching frequency, thereby reducing the size of the choke and the contactor.

In some embodiments, as already mentioned above, the two anti-parallel power switches can be connected to the center tap of the semiconductor module and also to additional module taps of the semiconductor module, which can also have a diode and a further module tap, wherein the diode is connected on the cathode side to the positive connection end of the intermediate circuit and on the anode side to the further module tap. The diode contributes to the power booster function.

In summary, a highly integrated semiconductor module for a multilevel converter is provided. The semiconductor module integrates part of a power regulator, preferably in the form of a SiC boost module for a DC/DC converter. Highly integrated semiconductor modules have a simple and effective cooling connection and a power-intensive design.

The invention also relates to a semiconductor module for a converter component, wherein the semiconductor module design has two series-connected power switches and two anti-series-connected power switches according to a T-NPC design, and further comprises a boost assembly connected in parallel with the two series-connected power switches. The invention also relates to a motor vehicle having a converter assembly as described above and a DC-DC converter designed for high-frequency switching over a base load. The high frequency switched DC-DC converter may be an external power regulator or a power regulator partially or fully integrated into the converter components.

Drawings

Embodiments of the invention will now be described, by way of example and with reference to the accompanying drawings. In the drawings:

FIG. 1 shows a three-level block in an A-NPC design with two additional block taps;

FIG. 2 shows a first embodiment of a high voltage topology according to the present invention;

FIG. 3 shows a three-level block in an A-NPC design with two additional block taps and an additional boost branch, according to the present invention; and is

Fig. 4 shows a second embodiment of a high voltage topology according to the invention, wherein the power regulator is integrated in the drive converter.

Detailed Description

Fig. 1 shows a semiconductor module in an a-NPC design with two additional module taps. The three-level module in the A-NPC design comprises two Si-IGBTs T1 and T2; two SiC-MOSFETs M1, M2 in series and two diodes D1, D2. Two series-connected MOSFETs M1, M2 with antiparallel diodes D1, D2 are connected between the positive connection POS and the negative connection NEG for connection to an intermediate circuit. The two anti-parallel Si IGBTs T1, T2 are embodied as RB IGBTs (Reverse Blocking). The two anti-parallel Si-IGBTs T1, T2 are connected to the center tap TN so as to be connected to the middle circuit point N (neutral point), and the two anti-parallel Si-IGBTs T1, T2 are also connected to an additional module tap Tout 1. The semiconductor module also has a further additional module tap Tout2, which module tap Tout2 is connected within the module to the ac voltage output out of the semiconductor module. If an additional module tap Tout1 is connected to the module tap Tout2 (for example by means of a contactor that can be controlled from outside the module, as shown in fig. 2), two anti-parallel Si-IGBTs T1, T2 are connected between the alternating voltage output out and the center tap TN. In this mode of operation, the semiconductor module of FIG. 1 operates as a conventional three-level module in the A-NPC design. If the additional block tap Tout1 is not connected to the block tap Tout2, the three-level block of fig. 1 may operate in a two-level mode, where the MOSFETs T1, T2 in series may be used for two-level current direction, while the two anti-parallel Si-IGBTs T1, T2 may be used for power booster function. The semiconductor module has an additional diode D3 and an additional module tap Tout 3. An additional diode D3 may be used for the power booster function.

As is known from the three-level module in the a-NPC design, the semiconductor module has further taps for controlling the IGBTs and MOSFETs, which are not shown in fig. 1. As is known from three-level IGBT modules in conventional a-NPC designs, the modules may be designed, for example, as HVICs (High Voltage Integrated circuits) in SOI (Silicon on Insulator) technology, or the like.

Fig. 2 shows a first embodiment of a high voltage topology according to the present invention. The high voltage topology comprises a power regulator 1, a drive converter 2, a high voltage battery 3 and an electric motor 4, the drive converter 2 contributing to the function of the power regulator 1 in power boost.

The power regulator 1 has a six-phase arrangement of two SiC boost modules 10a, 10B, the SiC boost modules 10a, 10B having three boost branches B1, B2, B3, respectively. Each boost branch B1, B2, B3 includes a SiC-MOSFET M3 and a first diode D4 connected in parallel with each other, and a second diode D5 connected in series with the SiC-MOSFET M3 and the first diode D4. The boost branches B1, B2, B3 are connected between the positive region DC + of the intermediate circuit and the negative region DC-of the intermediate circuit, respectively. Between the MOSFET M3 and the first diode D4 on the one hand and the second diode D5 on the other hand, each boost branch B1, B2, B3 is connected via a choke S1, S2, S3 to the first power output 11 of the optional fuel cell 5a, boost cell 5B or range extender 5c with a small internal combustion engine. The second power output 12 of the fuel cell 5a, the booster cell 5b or the range extender 5c is DC-coupled to the negative region of the intermediate circuit.

As a drive inverter, the drive inverter 2 converts the voltage of the high-voltage battery 3 into an alternating-current voltage to supply power to the motor 4. The drive converter 2 is designed as a three-level converter which, in addition to comprising a capacitor C_dcIn addition, three semiconductor modules 20a, 20b, 20c are included, which are designed as half bridges. As detailed in fig. 1, the three semiconductor modules 20a, 20b, 20c are each designed according to a modified a-NPC design. The first and second additional module taps (Tout1, Tout2 in fig. 1) of the first semiconductor module 20a connect the first semiconductor module 20a with the controllable contactor 6 a. In the first position of the controllable contactor 6a, the IGBTs T1, T2 of the first semiconductor module 20a are connected in a conventional manner with the alternating voltage module tap (out in fig. 1) of the semiconductor module 20 a. Semiconductor module 20a is similar to capacitor C as a conventional a-NPC module in three-level operation_dcActing together as a drive converter. In the second position of the controllable contactor 6a, the electrical connection between the anti-series MOSFETs M1, M2 and the ac voltage block tap out is interrupted. Instead, the MOSFETs M1, M2 are connected via a first additional module tap (Tout1 in fig. 1) to an external voltage source 7 (e.g., the grid) and to the optional fuel cell 5a, boost cell 5b and range extender 5c, and via a third additional module tap (Tout3 in fig. 1) to the diode D3. Thus, in this position of the controllable contactor 6a, the second MOSFET M2 of the two anti-series MOSFETs assumes the function of the power switch of the boost branch of the conventional independent power regulator and contributes to the power booster function. In a similar manner, the first and second additional module taps of the second semiconductor module 20b connect the second semiconductor module 20b with the controllable contactor 6b, and the first and second additional module taps of the third semiconductor module 20c connect the third semiconductor module 20c with the controllable contactor 6 c.

A contactor 8 is arranged between the anti-parallel MOSFETs M1, M2 of the three semiconductor modules 20a, 20b, 20c and the center tap N for connecting the modules to the intermediate circuit, in a first position the contactor 8 connects the three semiconductor modules with the zero point N, and in a second position the contactor 8 DC-connects the three semiconductor modules with the negative region of the intermediate circuit. When contacts 6a, 6b and 6c are in the first position, contact 8 occupies the first position, and when contacts 6a, 6b and 6c are in the second position, contact 8 occupies the second position.

Thus, the anti-parallel MOSFETs M1, M2, the diode D3 and the choke S4 coupled thereto via the respective contacts 6a, 6b, 6c contribute to providing peak power at power boost.

In the first position of controllable contactors 6a, 6b, 6c, 8, drive converter 1 can thus be operated in a "drive converter" operating mode, in which semiconductor modules 20a, 20b and 20c are used in a conventional manner as three-level modules according to a-NPC for converting the direct voltage of high-voltage battery 3 in order to drive electric motor 4. In the second position of the controllable contactors 6a, 6b, 6c, 8, the drive converter 1 operates in a "power boost" mode of operation and provides peak power together with the power regulator 1. Since the external power regulator 1 thus has to provide a lower power, i.e. only a base load has to be covered, the power regulator 1 can be designed smaller, lighter and less costly.

A significant increase in the switching frequency can be achieved in the case of using SiC semiconductors. This has a great influence on the size and weight of the components of the power regulator 1. According to one embodiment, the half-bridge branches, in particular the MOSFETs M1, M2, are implemented with 1200V SiC semiconductors and the anti-parallel IGBTs T1, T2 are implemented with 600V Si semiconductors. The drive converter according to the invention can be operated at any voltage level. One side of the high voltage battery 3 may be, for example, a 400V/800V system.

Control of the power switch may be difficult to perform by switching directly from three-level control, known to those skilled in the art, to battery charge control when switching from three-level drive converter operation to battery charge operation.

Fig. 3 shows a semiconductor module in a modified a-NPC design according to the invention, with two additional module taps additionally comprising a boost branch B4. Each boost branch B4 includes a SiC-MOSFET M4 and a first diode D6 connected in parallel with each other, and a second diode D7 connected in series with the SiC-MOSFET M4 and the first diode D6. The boost branch B4 is arranged between the positive connection POS of the intermediate circuit and the negative connection NEG of the intermediate circuit, so that the second diode D7 is connected on the cathode side to the positive connection POS. Between the MOSFET M4 and the first diode D6 on the one hand and the second diode D7 on the other hand, the boost branch B4 is connected with a further module tap a. By integrating the boost branch B4 into the semiconductor module, a separate cooling and monitoring of the boost branch 4 can be dispensed with.

Fig. 4 shows a second embodiment of a high voltage topology according to the invention. The high voltage topology includes a three-phase power regulator 1', a drive converter 2', a high voltage battery 3 and a motor 4, the drive converter having an additional boost branch B4 to facilitate the function of the power regulator 1 '.

In contrast to the first exemplary embodiment, the boost branch of the second SiC boost module 10B is integrated as boost branch B4 in the drive converter 2'. The drive converter 2' comprises three semiconductor modules 21a, 21b, 21c, which are each designed according to a modified a-NPC design, as described in more detail in fig. 3. Furthermore, the drive converter 2 'comprises an additional choke S5, which together with the boost branch B4 of the semiconductor modules 21a, 21B, 21c and the power regulator 1' contributes to providing the base power and the peak power.

List of reference numerals

1, 1' power regulator

10a, 10b SiC boost module

11 first power output terminal

12 second power output

2, 2' driving frequency converter

20a，20b，20c，

21a, 21b, 21c semiconductor module

3 high-voltage battery

4 electric motor

5a fuel cell

5b boost battery

5c range extender

6a, 6b, 6c external controllable contactor

7 electric network

8 contactor

B1, B2, B3 and B4 boosting branches

D1，D2，D3，D4，

D5, D6, D7 diodes

M1、M2，M3，M4 MOSFET

Zero point of N

Out alternating voltage output terminal

POS positive connection end

S1，S2，S3，S4，

S5 choke coil

T1，T2 IGBT

TN center tap

Tout1，Tout2，Tout3，

A additional modular tap