阅读说明：本技术 利用多重光子异质结构界面的太阳能选择性吸收材料 (Solar selective absorbing material utilizing multiple photon heterostructure interface ) 是由 王龙 汪刘应 唐修检 刘顾 阳能军 田欣利 赵文博 于 2020-06-02 设计创作，主要内容包括：本发明公开了一种利用多重光子异质结构界面的太阳能选择性吸收材料,其异质膜系结构为：A[T<Sub>1</Sub>A]<Sup>n</Sup>T<Sub>2</Sub>[BC]<Sup>m</Sup>T<Sub>3</Sub>[DE]<Sup>k</Sup>,包括：①干涉吸收层结构A[T<Sub>1</Sub>A]<Sup>n</Sup>,②可见光调控膜层结构[BC]<Sup>m</Sup>,③红外调控膜层[DE]<Sup>k</Sup>,④异质结构界面吸收层T<Sub>2</Sub>、T<Sub>3</Sub>；其中,A、B、C、D、E均为电介质层,膜层排列周期系数m、n、k取值≥2的整数。本发明通过特殊的光子异质电介质人造结构复合材料,利用多重光子晶体异质结构界面的局域态与光子禁带效应,以达到控制不同波长区段的光波在材料结构内的传播状态,使其对0.3～2μm的可见光-近红外波长区段具有高吸收率,却在≥2.5μm的中远红外区域具有高反射特性,兼顾了太阳辐射能量的高效吸收与红外热辐射的低发射损耗,便于提高太阳能的光-热转换效率。(The invention discloses a solar selective absorbing material utilizing a multiple photon heterostructure interface, which has a heterostructure structure as follows: a [ T ] 1 A] n T 2 [BC] m T 3 [DE] k Comprises ① interference absorption layer structure AT 1 A] n ② visible light control film layer structure [ BC] m ③ Infrared regulatory film layer (DE)] k ④ heterostructure interfacial absorber layer T 2 、T 3 (ii) a A, B, C, D, E are dielectric layers, and the film arrangement period coefficients m, n and k are integers more than or equal to 2. According to the invention, through a special photon heterogeneous dielectric medium artificial structure composite material, the local state and photon forbidden band effect of a multiple photon crystal heterogeneous structure interface are utilized to control the propagation state of light waves in different wavelength sections in a material structure, so that the material has high absorption rate in a visible light-near infrared wavelength section of 0.3-2 mu m and high reflection characteristic in a middle and far infrared region of more than or equal to 2.5 mu m, and the efficient absorption and infrared of solar radiation energy are considered simultaneouslyThe low emission loss of the heat radiation is convenient for improving the light-heat conversion efficiency of the solar energy.)

1. A solar selective absorbing material using a multiple photon heterostructure interface, comprising: the heterogeneous membrane system structure is as follows: a [ T ]₁A]ⁿT₂[BC]^mT₃[DE]^kComprises ① interference absorption layer structure AT₁A]ⁿ② visible light control film layer structure [ BC]^m③ Infrared regulatory film layer (DE)]^k④ heterostructure interfacial absorber layer T₂、T₃(ii) a Wherein A, B, C, D, E are all dielectric layers,the film layer arrangement period coefficients m, n and k all represent the times of corresponding periodic structure alternate arrangement, and the value is an integer more than or equal to 2;

the interference absorption layer structure A [ T ]₁A]ⁿIs a dielectric layer A and an absorption layer T₁The dielectric layer A has a refractive index n at 550nm at the center of high-energy wavelength of solar energy_AThickness d of dielectric layer A_AIs 550nm/4n_A(ii) a Absorption layer T₁Thickness d of_T1≤15nm；

The visible light regulation and control film layer structure [ BC ]]^mA periodic layered structure composed of dielectric layers B and C alternately, wherein the refractive indexes of the dielectric layers are n respectively when B, C_B、n_CThe thickness of the film layer is d_B、d_CThen there is a relationship: n is_Bd_B+n_Cd_C＝λ₁/2，λ₁Taking a value within the range of 450-700 mu m;

the infrared regulation and control film layer [ EF]^kThe dielectric layers E and F are alternately formed into a layered structure, and if E, F the refractive indexes of the two-layer medium are n_E、n_FThe thickness of the film layer is d_E、d_FThen there is a relationship: n is_Ed_E+n_Fd_F＝λ₂/2，λ₂The value is within the range of 4-14 μm.

2. The solar selective absorber material using a multiple-photon heterostructure interface of claim 1, wherein: the dielectric is selected from ZnS, ZnSe, PbTe, Al₂O₃、SiO₂、TiO₂、Si₃N₄、MgF₂、PbF₂。

3. The solar selective absorber material using a multiple-photon heterostructure interface of claim 1, wherein: the T is₁、T₂、T₃Is selected from Ti, Si, graphene and MoS₂、WS₂、MoSe₂、WSe₂。

4. The solar selective absorber material using a multiple-photon heterostructure interface of claim 3, wherein: the T is₁The material of (A) is metallic titanium Ti, T₂、T₃All the materials are 3 layers of two-dimensional material graphene.

5. The solar selective absorber material using a multiple-photon heterostructure interface of claim 3, wherein: the T is₁Is made of polysilicon, T₂、T₃All the materials are 2 layers of transition metal chalcogenide two-dimensional material MoS₂。

6. The solar selective absorber material using a multiple-photon heterostructure interface of claim 1, wherein: the heterostructure interface absorption layer T₂、T₃The thickness of (A) is 1.0 to 15.0 nm.

7. The solar selective absorber material using a multiple-photon heterostructure interface of claim 1, wherein: n is 2, m is 3, k is 4; or: n is 3, m is 4 and k is 6.

8. The solar selective absorber material using a multiple photon heterostructure interface according to any of claims 1 to 4, 6, 7, wherein: n is 2, m is 3, k is 4;

interference absorption layer structure AT₁A]ⁿThe material of the dielectric film layer A is silicon nitride, and the refractive index n is at the position of 550nm at the center of the solar high-energy wavelength_AIs 2, thickness d_AAbout 70 nm; the absorption film layer T1 is made of titanium Ti with a thickness d_T1Is 10 nm;

visible light regulation and control film layer structure [ BC ]]^mThe material of the B dielectric film layer is magnesium fluoride, the refractive index n_BIs 1.38; the C dielectric film layer is made of titanium oxide and has a refractive index n_CIs 2.6; thickness d of B dielectric film layer_BIs 100nm, and the thickness d of the C dielectric film layer_CIs 55 nm;

infrared regulation and control film layer (DE)]^kThe material of the D dielectric film layer is lead telluride, and the refractive index n_DIs 5.6; the material of the E dielectric film layer is magnesium fluoride, the refractive index n_EIs 1.38; thickness d of E dielectric film layer_E500nm, thickness d of F dielectric film_FIs 1600 nm;

heterostructure interfacial absorber layer T₂、T₃3 layers of two-dimensional material graphene are adopted, and the thickness is 1.7 nm.

9. The solar selective absorber using a multiple photon heterostructure interface according to any one of claims 1 to 3 and 5 to 7, wherein: n is 3, m is 4, k is 6;

interference absorption layer structure AT₁A]ⁿThe material of the dielectric film layer A is titanium oxide, and the refractive index n is at the position of 550nm at the center of the solar high-energy wavelength_AIs 2.6, thickness d_AAbout 52 nm; the absorption film layer T1 is polysilicon with a thickness d_T1Is 10 nm;

visible light regulation and control film layer structure [ BC ]]^mThe material of the B dielectric film layer is titanium oxide, the refractive index n_CIs 2.6; the C dielectric film layer is made of silicon oxide and has a refractive index n_EIs 1.46; thickness d of B dielectric film layer_BIs 50nm, and the thickness d of the C dielectric film layer_CIs 85 nm;

infrared regulation and control film layer (DE)]^kThe material of the D dielectric film layer is silicon oxide, and the refractive index n_DIs 1.46; the material of the E dielectric film layer is lead telluride, and the refractive index n_EIs 5.6; d dielectric film layer thickness D_DThe value is 685nm, and the thickness d of the E dielectric film layer_EThe value is 180 nm;

heterostructure interfacial absorber layer T₂、T₃All adopt 2 layers of transition metal chalcogenide two-dimensional material MoS₂The thickness was 1.3 nm.

Technical Field

The invention relates to a solar energy efficient selective absorption material utilizing a multiple photon heterostructure interface, and belongs to the technical field of solar energy selective absorption materials.

Background

The progress and development of human civilization is closely linked with energy sources and cannot be divided. The energy consumption in the world is far beyond 6000 gigawatts, and non-renewable fossil energy sources face serious crisis. Solar energy is used as a clean and renewable new energy source, and is the most effective way for solving the current global energy crisis and ecological imbalance. Solar energy is generated by thermonuclear fusion reaction, and brings inexhaustible photo-thermal to the earth in an electromagnetic radiation mode. The heat collector is an important element in the light-heat conversion process, and the solar energy absorption surface material of the heat collector determines the light-heat conversion efficiency. Therefore, the development of solar spectrum selective absorption thin film materials with the advantages of high performance, high stability, long service life and the like has been a hot direction of researchers in related fields.

At present, the solar selective absorption film structure can be mainly divided into intrinsic absorption, dielectric-metal composite, dielectric metal interference, multilayer gradual change, surface microstructure and other types. The solar selective absorption film material has been developed into Ag/SiO from the initial black nickel coating₂、TiAlSiN/TiAlSiON/SiO₂、TiAlN/TiAlON/Si₃N₄、NbAlN/NbAlON/Si₃N₄、TiAlN/CrAlON/Si₃N₄、TiAlN/AlON、Ge/A1₂O₃、AlN_xO_y/Al₂O₃、Si/SiC、PbS/TiO₂、CuO/TiO₂And the like, and the like. However, the current solar selective absorption thin film structures and materials have the defects of low absorption efficiency, poor high temperature resistance and photo-thermal conversion efficiencyLow and the like. Solar energy absorbing films absorb and store solar energy, but also dissipate energy by generating infrared thermal radiation. The solar radiation energy is mainly concentrated in the visible light-near infrared wavelength range of 0.3-2 μm, and the infrared radiation on the object surface is mainly concentrated in the middle and far infrared wavelength range of 2.5-50 μm. Therefore, the solar absorbing film should have a selective absorption function, i.e., a high absorption rate in the visible-near infrared wavelength region, but a high reflectance in the mid-and far-infrared wavelength regions, thereby preventing absorbed short-wave energy from being dissipated in the form of long-wave infrared radiation.

Disclosure of Invention

In view of the above prior art, the present invention provides a solar selective absorber using a multiple photon heterostructure interface. The invention utilizes the characteristics of interface local area, photon forbidden band, thin film interference and the like among the multiple photonic crystal heterostructures to achieve the spectrum characteristics of absorption, reflection, transmission and the like of the material in different wave band intervals in a cooperative control manner, so that the material has high absorption rate in a visible light-near infrared wavelength range of 0.3-2 mu m, but has high reflection characteristic in a middle and far infrared region of more than or equal to 2.5 mu m, and is convenient for improving the light-heat conversion efficiency of solar energy.

The invention is realized by the following technical scheme:

a solar selective absorbing material utilizing a multiple photon heterostructure interface, the heterostructure structure of which is: a [ T ]₁A]ⁿT₂[BC]^mT₃[DE]^kComprises ① interference absorption layer structure AT₁A]ⁿ② visible light control film layer structure [ BC]^m③ Infrared regulatory film layer (DE)]^k④ heterostructure interfacial absorber layer T₂、T₃(ii) a A, B, C, D, E is dielectric layer selected from ZnS, ZnSe, PbTe and Al₂O₃、SiO₂、TiO₂、Si₃N₄、MgF₂、PbF₂Optical film materials such as isopar; t is₁、T₂、T₃Is selected from Ti, Si, graphene and MoS₂、WS₂、MoSe₂、WSe₂Wait forA transition metal chalcogenide two-dimensional material; the film layer arrangement period coefficients m, n and k all represent the times of corresponding periodic structure alternate arrangement, and the value is an integer larger than or equal to 2.

The interference absorption layer structure A [ T ]₁A]ⁿIs a dielectric layer A and an absorption layer T₁The alternating layered structure realizes the main absorption of the multilayer interference. If the refractive index of the dielectric layer A at the center of the solar high-energy wavelength is 550nm, the refractive index is n_AThickness d of dielectric layer A_AIs 550nm/4n_A(ii) a Absorption layer T₁Thickness d of_T1≤15nm。

The visible light regulation and control film layer structure [ BC ]]^mThe dielectric layer B and the dielectric layer C are in a periodic layered structure formed by alternating, and high reflection of a visible light absorption waveband of 0.4-0.78 is mainly realized. If B, C the refractive indices of the two-layer dielectrics are n_B、n_CThe thickness of the film layer is d_B、d_CThen there is a relationship: n is_Bd_B+n_Cd_C＝λ₁/2，λ₁The value is within the range of 450-700 μm.

The infrared regulation and control film layer [ EF]^kThe dielectric layer E and the dielectric layer F are of a layered structure formed by alternating, and high reflection of middle and far infrared bands of 2.5-15 mu m is mainly realized. If E, F the refractive indexes of the two-layer medium are n respectively_E、n_FThe thickness of the film layer is d_E、d_FThen there is a relationship: n is_Ed_E+n_Fd_F＝λ₂/2，λ₂The value is within the range of 4-14 μm.

Further, the heterostructure interface absorption layer T₂、T₃The thickness of (A) is 1.0 to 15.0 nm.

The solar energy efficient selective absorption film layer material utilizing the multiple photon heterostructure interface has a simple structure and excellent performance. By utilizing the interface state local characteristics among the multiple photonic crystal heterostructures and the special artificial periodic dielectric medium structure to cooperatively control the spectral characteristics of the material, the material has high absorption rate in a visible light-near infrared wavelength range of 0.3-2 mu m and high reflection characteristic in a middle and far infrared region of more than or equal to 2.5 mu m, and has high-efficiency absorption of solar radiation energy and low emission loss of infrared heat radiation, so that the light-heat conversion efficiency of solar energy is improved.

According to the invention, through a special photon heterogeneous dielectric medium artificial structure composite material, the local state and photon forbidden band effect of a multiple photon crystal heterogeneous structure interface are utilized to control the propagation state of light waves in different wavelength sections in a material structure, and further control the spectral characteristics of absorption, reflection, transmission and the like of a photon crystal material to different light wave bands, so that the problem of taking the selectivity and high absorption and high reflection of a solar spectrum into consideration is solved, and the light-heat conversion efficiency is improved.

The various terms and phrases used herein have the ordinary meaning as is well known to those skilled in the art. The thickness in the present invention refers to the thickness of a single period.

Drawings

FIG. 1: heterogeneous membrane system structure AT₁A]²T₂[BC]³T₃[DE]⁴Schematic structural diagram of (1).

FIG. 2: the absorption spectrum characteristics in the visible-near infrared range of 200nm to 2000nm are shown schematically (example 1).

FIG. 3: a schematic representation of the reflection spectrum characteristics in the infrared range from 2500nm to 15000nm (example 1).

FIG. 4: the absorption spectrum characteristics in the visible-near infrared range of 200nm to 2000nm are shown schematically (example 2).

FIG. 5: a schematic representation of the reflection spectrum characteristics in the infrared band from 2500nm to 15000nm (example 2).

Detailed Description

The present invention will be further described with reference to the following examples. However, the scope of the present invention is not limited to the following examples. It will be understood by those skilled in the art that various changes and modifications may be made to the invention without departing from the spirit and scope of the invention.

The instruments, reagents, materials and the like used in the following examples are conventional instruments, reagents, materials and the like in the prior art and are commercially available in a normal manner unless otherwise specified. Unless otherwise specified, the experimental methods, detection methods, and the like described in the following examples are conventional experimental methods, detection methods, and the like in the prior art.

The structure of the heterogeneous film system of the solar selective absorbing material using the interface of the multiple photon heterostructure is shown in fig. 1.