阅读说明：本技术 发光器件、发光装置、电子设备、显示装置及照明装置 (Light-emitting device, light-emitting apparatus, electronic apparatus, display apparatus, and lighting apparatus ) 是由 濑尾哲史 大泽信晴 山崎舜平 于 2020-01-31 设计创作，主要内容包括：提供一种长寿命的发光器件。发光装置包括第一发光器件和第一颜色转换层。第一颜色转换层包含第一物质。第一发光器件的EL层从阳极侧依次包括第一层、第二层、第三层、发光层和第四层。第一层包含第一有机化合物和第二有机化合物。第二层包含第三有机化合物。第三层包含第四有机化合物。发光层包含第五有机化合物和第六有机化合物。第四层包含第七有机化合物。第一有机化合物是对第二有机化合物呈现电子接受性的有机化合物。第五有机化合物是发光中心物质。第二有机化合物的HOMO能级为-5.7eV以上且-5.4eV以下。(A long-life light emitting device is provided. The light emitting apparatus includes a first light emitting device and a first color conversion layer. The first color conversion layer contains a first substance. The EL layer of the first light emitting device includes a first layer, a second layer, a third layer, a light emitting layer, and a fourth layer in this order from the anode side. The first layer includes a first organic compound and a second organic compound. The second layer includes a third organic compound. The third layer comprises a fourth organic compound. The light-emitting layer contains a fifth organic compound and a sixth organic compound. The fourth layer comprises a seventh organic compound. The first organic compound is an organic compound having an electron accepting property with respect to the second organic compound. The fifth organic compound is a luminescent center substance. The HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less.)

1. A light emitting device comprising:

a first light emitting device; and

a first color conversion layer for converting a first color,

wherein the first color conversion layer contains a first substance that absorbs light to emit light,

light from the first light emitting device is incident on the first color conversion layer,

and a degradation curve indicating a luminance change of the light emission obtained when the constant current is supplied to the first light emitting device has a maximum value.

2. A light emitting device comprising:

a first light emitting device; and

a first color conversion layer for converting a first color,

wherein the first color conversion layer contains a first substance that absorbs light to emit light,

light from the first light emitting device is incident on the first color conversion layer,

the first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode,

the EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side,

the first layer is in contact with the anode,

the first layer comprises a first organic compound and a second organic compound,

the second layer comprises a third organic compound,

the third layer comprises a fourth organic compound,

the light-emitting layer contains a fifth organic compound and a sixth organic compound,

the fourth layer comprises a seventh organic compound,

the first organic compound is an organic compound exhibiting an electron accepting property to the second organic compound,

the fifth organic compound is a luminescent center substance,

the HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less,

and the seventh organic compound is present at an electric field strength [ V/cm ]]Has an electron mobility of 1X 10 at a square root of 600^-7cm²5 × 10 at a rate of more than Vs^-5cm²Vs or less.

3. A light emitting device comprising:

a first light emitting device; and

a first color conversion layer for converting a first color,

wherein the first color conversion layer contains a first substance that absorbs light to emit light,

light from the first light emitting device is incident on the first color conversion layer,

the first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode,

the EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side,

the first layer is in contact with the anode,

the fourth layer is in contact with the light-emitting layer,

the first layer comprises a first organic compound and a second organic compound,

the second layer comprises a third organic compound,

the third layer comprises a fourth organic compound,

the light-emitting layer contains a fifth organic compound and a sixth organic compound,

the fourth layer comprises a seventh organic compound,

the first organic compound is an organic compound exhibiting an electron accepting property to the second organic compound,

the fifth organic compound is a luminescent center substance,

the HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less,

the seventh organic compound is present at an electric field strength [ V/cm ]]Has an electron mobility of 1X 10 at a square root of 600^-7cm²5 × 10 at a rate of more than Vs^-5cm²Below the value of/Vs,

and the HOMO level of the seventh organic compound is-6.0 eV or more.

4. A light emitting device comprising:

a first light emitting device; and

a first color conversion layer for converting a first color,

wherein the first color conversion layer contains a first substance that absorbs light to emit light,

light from the first light emitting device is incident on the first color conversion layer,

the first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode,

the EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side,

the first layer is in contact with the anode,

the fourth layer is in contact with the light-emitting layer,

the first layer comprises a first organic compound and a second organic compound,

the second layer comprises a third organic compound,

the third layer comprises a fourth organic compound,

the light-emitting layer contains a fifth organic compound and a sixth organic compound,

the fourth layer comprises a seventh organic compound,

the first organic compound is an organic compound exhibiting an electron accepting property to the second organic compound,

the fifth organic compound is a luminescent center substance,

the HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less,

the HOMO energy level difference between the third organic compound and the second organic compound is 0.2eV or less,

the HOMO level of the third organic compound is the same as or deeper than the HOMO level of the second organic compound,

the seventh organic compound is present at an electric field strength [ V/cm ]]Has an electron mobility of 1X 10 at a square root of 600^-7cm²5 × 10 at a rate of more than Vs^-5cm²Below the value of/Vs,

and the HOMO level of the seventh organic compound is-6.0 eV or more.

5. A light emitting device comprising:

a first light emitting device; and

a first color conversion layer for converting a first color,

wherein the first color conversion layer contains a first substance that absorbs light to emit light,

light from the first light emitting device is incident on the first color conversion layer,

the first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode,

the EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side,

the first layer is in contact with the anode,

the fourth layer is in contact with the light-emitting layer,

the first layer comprises a first organic compound and a second organic compound,

the second layer comprises a third organic compound,

the third layer comprises a fourth organic compound,

the light-emitting layer contains a fifth organic compound and a sixth organic compound,

the fourth layer comprises a seventh organic compound,

the first organic compound is an organic compound exhibiting an electron accepting property to the second organic compound,

the second organic compound comprises a first hole-transporting skeleton,

the third organic compound comprises a second hole-transporting skeleton,

the fourth organic compound comprises a third hole-transporting skeleton,

the fifth organic compound is a luminescent center substance,

the HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less,

the first hole-transporting skeleton, the second hole-transporting skeleton, and the third hole-transporting skeleton each independently represent any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton,

the seventh organic compound is present at an electric field strength [ V/cm ]]Has an electron mobility of 1X 10 at a square root of 600^-7cm²5 × 10 at a rate of more than Vs^-5cm²Below the value of/Vs,

and the HOMO level of the seventh organic compound is-6.0 eV or more.

6. A light emitting device comprising:

a first light emitting device; and

a first color conversion layer for converting a first color,

wherein the first color conversion layer contains a first substance that absorbs light to emit light,

light from the first light emitting device is incident on the first color conversion layer,

the first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode,

the EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side,

the first layer is in contact with the anode,

the fourth layer is in contact with the light-emitting layer,

the first layer comprises a first organic compound and a second organic compound,

the second layer comprises a third organic compound,

the third layer comprises a fourth organic compound,

the light-emitting layer contains a fifth organic compound and a sixth organic compound,

the fourth layer comprises a seventh organic compound and an eighth organic compound,

the first organic compound is an organic compound exhibiting an electron accepting property to the second organic compound,

the fifth organic compound is a luminescent center substance,

the HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less,

the seventh organic compound is an organic compound having an anthracene skeleton,

and, the eighth organic compound is an organic complex of an alkali metal or an alkaline earth metal.

7. A light emitting device comprising:

a first light emitting device; and

a first color conversion layer for converting a first color,

wherein the first color conversion layer contains a first substance that absorbs light to emit light,

light from the first light emitting device is incident on the first color conversion layer,

the first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode,

the EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side,

the first layer is in contact with the anode,

the fourth layer is in contact with the light-emitting layer,

the first layer comprises a first organic compound and a second organic compound,

the second layer comprises a third organic compound,

the third layer comprises a fourth organic compound,

the light-emitting layer contains a fifth organic compound and a sixth organic compound,

the fourth layer comprises a seventh organic compound and an eighth organic compound,

the first organic compound is an organic compound exhibiting an electron accepting property to the second organic compound,

the fifth organic compound is a luminescent center substance,

the HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less,

the HOMO energy level difference between the third organic compound and the second organic compound is 0.2eV or less,

the HOMO level of the third organic compound is the same as or deeper than the HOMO level of the second organic compound,

the seventh organic compound is an organic compound having an anthracene skeleton,

and, the eighth organic compound is an organic complex of an alkali metal or an alkaline earth metal.

8. The light-emitting device according to claim 7, wherein a concentration of the eighth organic compound in the fourth layer becomes lower from the light-emitting layer side to the cathode side.

9. A light emitting device comprising:

a first light emitting device; and

a first color conversion layer for converting a first color,

wherein the first color conversion layer contains a first substance that absorbs light to emit light,

light from the first light emitting device is incident on the first color conversion layer,

the first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode,

the EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side,

the first layer is in contact with the anode,

the fourth layer is in contact with the light-emitting layer,

the first layer comprises a first organic compound and a second organic compound,

the second layer comprises a third organic compound,

the third layer comprises a fourth organic compound,

the light-emitting layer contains a fifth organic compound and a sixth organic compound,

the fourth layer comprises a seventh organic compound and an eighth organic compound,

the first organic compound is an organic compound exhibiting an electron accepting property to the second organic compound,

the second organic compound comprises a first hole-transporting skeleton,

the third organic compound comprises a second hole-transporting skeleton,

the fourth organic compound comprises a third hole-transporting skeleton,

the fifth organic compound is a luminescent center substance,

the HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less,

the first hole-transporting skeleton, the second hole-transporting skeleton, and the third hole-transporting skeleton each independently represent any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton,

the seventh organic compound is an organic compound having an anthracene skeleton,

and, the eighth organic compound is an organic complex of an alkali metal or an alkaline earth metal.

10. The light-emitting device according to any one of claims 2 to 7 and 9, wherein an electron mobility of the seventh organic compound is smaller than an electron mobility of the sixth organic compound.

11. The light-emitting device according to any one of claims 2 to 7 and 9, wherein the HOMO level difference of the fourth organic compound and the third organic compound is 0.2eV or less.

12. The light-emitting device according to any one of claims 2 to 7 and 9, wherein the HOMO level of the fourth organic compound is deeper than the HOMO level of the third organic compound.

13. The light-emitting device according to any one of claims 2 to 7 and 9, wherein the second organic compound is an organic compound having a dibenzofuran skeleton.

14. The light-emitting device according to any one of claims 2 to 7 and 9, wherein the second organic compound and the third organic compound are the same substance.

15. The light-emitting device according to any one of claims 2 to 7 and 9, wherein the fifth organic compound is a blue fluorescent material.

16. The light-emitting apparatus according to any one of claims 2 to 7 and 9, wherein a degradation curve indicating a luminance change of light emission obtained when a constant current is supplied to the first light-emitting device has a maximum value.

17. The light-emitting device according to any one of claims 1 to 7 and 9, wherein the first substance which absorbs light to emit light is a quantum dot.

18. The light-emitting apparatus according to any one of claims 1 to 7 and 9, wherein the first light-emitting device has a microcavity structure.

19. The light-emitting device according to any one of claims 1 to 7 and 9, further comprising:

a second light emitting device; and

a second color conversion layer for converting a color of the color image,

wherein the second color conversion layer comprises a second substance that absorbs light to emit light,

light from the second light emitting device is incident on the second color conversion layer,

the second light emitting device has the same structure as the first light emitting device,

and the wavelength of light from the first substance is different from the wavelength of light from the second substance.

20. The light-emitting device according to claim 19, wherein the second substance is a quantum dot.

21. The light-emitting apparatus according to claim 19, wherein the second light-emitting device has a microcavity structure.

22. The light emitting apparatus of claim 19, further comprising a third light emitting device,

wherein the third light emitting device has the same structure as the first light emitting device,

and light from the third light emitting device is emitted out of the light emitting apparatus without passing through the color conversion layer.

23. The light emitting apparatus of claim 19, further comprising:

a third light emitting device; and

a structure having a function of scattering light,

wherein the third light emitting device has the same structure as the first light emitting device,

and light from the third light-emitting device is emitted to the outside of the light-emitting apparatus through the structure having the function of scattering light.

24. The light emitting apparatus of claim 19, further comprising:

a third light emitting device;

a first coloring layer;

a second coloring layer; and

a resin layer which is formed on the surface of the substrate,

wherein light from the first light emitting device is emitted through the first color conversion layer and the first colored layer,

light from the second light emitting device is emitted through the second color conversion layer and the second colored layer,

the third light emitting device has the same structure as the first light emitting device,

and light from the third light emitting device is emitted through the resin layer.

25. The light-emitting apparatus according to claim 23, wherein the third light-emitting device has a microcavity structure.

26. The light-emitting apparatus according to claim 24, wherein the third light-emitting device has a microcavity structure.

27. An electronic device, comprising:

the light-emitting device according to any one of claims 1 to 7 and 9; and

any of a sensor, an operation button, a speaker, and a microphone.

28. A display device comprising the light-emitting device according to any one of claims 1 to 7 and 9.

29. An electronic device, comprising:

the light-emitting device according to any one of claims 1 to 7 and 9; and

a transistor having a gate electrode and a drain electrode,

wherein the transistor includes an oxide semiconductor.

Technical Field

Embodiments of the present invention relate to a light-emitting element, a light-emitting device, a display module, an illumination module, a display device, a light-emitting device, an electronic apparatus, and an illumination device. Note that one embodiment of the present invention is not limited to the above-described technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a method of manufacture. One embodiment of the present invention relates to a program (process), a machine (machine), a product (manufacture), or a composition of matter (machine). Specifically, examples of the technical field of one embodiment of the present invention disclosed in the present specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, an illumination device, a power storage device, a memory device, an imaging device, methods for driving the same, and methods for manufacturing the same.

Background

A light emitting device (organic EL device) including an organic compound and utilizing Electroluminescence (EL) is actively put into practical use. In the basic structure of these light-emitting devices, an organic compound layer (EL layer) containing a light-emitting material is sandwiched between a pair of electrodes. By applying a voltage to the element, carriers are injected, and light emission from the light-emitting material can be obtained by utilizing the recombination energy of the carriers.

Since such a light emitting device is a self-light emitting type light emitting device, there are advantages that visibility of a pixel is higher, a backlight is not required, and the like when used as a pixel of a display, compared with a liquid crystal. Therefore, the light emitting device is suitable for a flat panel display element. In addition, a display including such a light emitting device can be manufactured to be thin and light, which is also a great advantage. Further, a very high speed response is one of the characteristics of the light emitting device.

Further, since the light emitting layer of such a light emitting device can be continuously formed in two dimensions, surface emission can be obtained. This is a feature that is difficult to obtain in a point light source typified by an incandescent lamp or an LED or a line light source typified by a fluorescent lamp. Therefore, the light-emitting device is also highly valuable as a surface light source which can be used for illumination and the like.

When the light emitting device is used for a pixel of a full color display, at least three colors of light of red, green, and blue need to be obtained, and there are mainly two methods for obtaining the three colors of light. One is a method using a light emitting device that displays light emission of different emission colors. The other is a method of using a light emitting device which displays light of the same emission color and converts the emission into light of a desired wavelength corresponding to each pixel.

The former is advantageous in terms of light emitting efficiency because of a small loss of light, and the latter is advantageous in terms of cost because it is easy to manufacture and easy to improve yield because it is not necessary to manufacture a light emitting device separately for each pixel.

As a method of changing the above-described light emission to light of a desired wavelength for each pixel, typically, there are a method of obtaining light of a desired wavelength by cutting off a part of light emission from a light emitting device, and a method of obtaining light of a desired wavelength by converting light from a light emitting device. The latter is also dependent on the conversion efficiency, but has relatively little energy loss compared to the former, which cuts off only a part of the light emission obtained. Therefore, a light-emitting device with low power consumption can be more easily obtained by adopting the latter method.

In the above-described method of converting light emitted from a light emitting device into light of a desired wavelength, a color conversion layer using photoluminescence is used. The color conversion layer contains a substance that emits light when excited by absorption of light. Color conversion layers using organic compounds have been in existence for a long time, but in recent years, color conversion layers using Quantum Dots (QDs) have been put to practical use.

[ reference documents ]

[ patent document ]

[ patent document 1] PCT International publication No. WO2016/098570 pamphlet

Disclosure of Invention

It is a further object of one embodiment of the present invention to provide a novel light emitting device. Another object of one embodiment of the present invention is to provide a light-emitting device having excellent light-emitting efficiency. In addition, another object of one embodiment of the present invention is to provide a light-emitting device having a long lifetime. In addition, another object of one embodiment of the present invention is to provide a light-emitting device with low driving voltage.

Another object of one embodiment of the present invention is to provide a light-emitting device, an electronic device, and a display device with high reliability. Another object of one embodiment of the present invention is to provide a light-emitting device, an electronic device, and a display device which consume low power.

The present invention can achieve only one of the above objects.

One embodiment of the present invention is a light emitting apparatus including a first light emitting device and a first color conversion layer. Wherein the first color conversion layer contains a first substance that absorbs light to emit light. Luminescence from the first light emitting device is incident to the first color conversion layer. The degradation curve representing a luminance change of light emission obtained when a constant current is supplied to the first light emitting device has a maximum value.

In addition, another embodiment of the present invention is a light emitting apparatus including a first light emitting device and a first color conversion layer. The first color conversion layer contains a first substance that absorbs light to emit light. Luminescence from the first light emitting device is incident to the first color conversion layer. The first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer is in contact with the anode. The first layer includes a first organic compound and a second organic compound. The second layer includes a third organic compound. The third layer comprises a fourth organic compound. The light-emitting layer contains a fifth organic compound and a sixth organic compound. The fourth layer comprises a seventh organic compound. The first organic compound is an organic compound that exhibits an electron accepting property with respect to the second organic compound. The fifth organic compound is a luminescent center substance. The HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less. The seventh organic compound is present at an electric field strength [ V/cm ]]Has an electron mobility of 1X 10 at a square root of 600^-7cm²5 × 10 at a rate of more than Vs^-5cm²Vs or less.

In addition, another embodiment of the present invention is a light emitting apparatus including a first light emitting device and a first color conversion layer. The first color conversion layer contains a first substance that absorbs light to emit light. Luminescence from the first light emitting device is incident to the first color conversion layer. The first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer is in contact with the anode. The fourth layer is in contact with the light-emitting layer. The first layer includes a first organic compound and a second organic compound. The second layer includes a third organic compound. The third layer comprises a fourth organic compound. The light-emitting layer contains a fifth organic compound and a sixth organic compoundA compound is provided. The fourth layer comprises a seventh organic compound. The first organic compound is an organic compound that exhibits an electron accepting property with respect to the second organic compound. The fifth organic compound is a luminescent center substance. The HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less. The seventh organic compound is present at an electric field strength [ V/cm ]]Has an electron mobility of 1X 10 at a square root of 600^-7cm²5 × 10 at a rate of more than Vs^-5cm²Vs or less. The HOMO level of the seventh organic compound is-6.0 eV or more.

In addition, another embodiment of the present invention is a light emitting apparatus including a first light emitting device and a first color conversion layer. The first color conversion layer contains a first substance that absorbs light to emit light. Luminescence from the first light emitting device is incident to the first color conversion layer. The first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer is in contact with the anode. The fourth layer is in contact with the light-emitting layer. The first layer includes a first organic compound and a second organic compound. The second layer includes a third organic compound. The third layer comprises a fourth organic compound. The light-emitting layer includes a fifth organic compound and a sixth organic compound. The fourth layer comprises a seventh organic compound. The first organic compound is an organic compound that exhibits an electron accepting property with respect to the second organic compound. The fifth organic compound is a luminescent center substance. The HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less. The third organic compound and the second organic compound have a HOMO energy level difference of 0.2eV or less. The HOMO level of the third organic compound is the same as or deeper than the HOMO level of the second organic compound. The seventh organic compound is present at an electric field strength [ V/cm ]]Has an electron mobility of 1X 10 at a square root of 600^-7cm²5 × 10 at a rate of more than Vs^-5cm²Vs or less. The HOMO level of the seventh organic compound is-6.0 eV or more.

In addition, another embodiment of the present invention is a light emitting apparatus including a first light emitting device and a first color conversion layer. The first color conversion layer contains a first substance that absorbs light to emit light. Luminescence from the first light emitting device is incident to the first color conversion layer. The first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer is in contact with the anode. The fourth layer is in contact with the light-emitting layer. The first layer includes a first organic compound and a second organic compound. The second layer includes a third organic compound. The third layer comprises a fourth organic compound. The light-emitting layer includes a fifth organic compound and a sixth organic compound. The fourth layer comprises a seventh organic compound. The first organic compound is an organic compound that exhibits an electron accepting property with respect to the second organic compound. The second organic compound includes a first hole-transporting skeleton. The third organic compound includes a second hole-transporting skeleton. The fourth organic compound includes a third hole-transporting skeleton. The fifth organic compound is a luminescent center substance. The HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less. The first hole-transporting skeleton, the second hole-transporting skeleton, and the third hole-transporting skeleton each independently represent any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. The seventh organic compound is present at an electric field strength [ V/cm ]]Has an electron mobility of 1X 10 at a square root of 600^-7cm²5 × 10 at a rate of more than Vs^-5cm²Vs or less. The HOMO level of the seventh organic compound is-6.0 eV or more.

In addition, another embodiment of the present invention is a display apparatus including a first light emitting device and a first color conversion layer. The first color conversion layer contains a first substance that absorbs light to emit light. Luminescence from the first light emitting device is incident to the first color conversion layer. The first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer is in contact with the anode. The fourth layer is in contact with the light-emitting layer. The first layer includes a first organic compound and a second organic compound. The second layer includes a third organic compound. The third layer comprises a fourth organic compound. The light-emitting layer includes a fifth organic compound and a sixth organic compound. The fourth layer includes a seventh organic compound and an eighth organic compound. The first organic compound is an organic compound that exhibits an electron accepting property with respect to the second organic compound. The fifth organic compound is a luminescent center substance. The HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less. The seventh organic compound is an organic compound having an anthracene skeleton. The eighth organic compound is an organic complex of an alkali metal or an alkaline earth metal.

In addition, another embodiment of the present invention is a display apparatus including a first light emitting device and a first color conversion layer. The first color conversion layer contains a first substance that absorbs light to emit light. Luminescence from the first light emitting device is incident to the first color conversion layer. The first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer is in contact with the anode. The fourth layer is in contact with the light-emitting layer. The first layer includes a first organic compound and a second organic compound. The second layer includes a third organic compound. The third layer comprises a fourth organic compound. The light-emitting layer includes a fifth organic compound and a sixth organic compound. The fourth layer includes a seventh organic compound and an eighth organic compound. The first organic compound is an organic compound that exhibits an electron accepting property with respect to the second organic compound. The fifth organic compound is a luminescent center substance. The HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less. The third organic compound and the second organic compound have a HOMO energy level difference of 0.2eV or less. The HOMO level of the third organic compound is the same as or deeper than the HOMO level of the second organic compound. The seventh organic compound is an organic compound having an anthracene skeleton. The eighth organic compound is an organic complex of an alkali metal or an alkaline earth metal.

In addition, another embodiment of the present invention is a light-emitting device having the above structure, wherein a concentration of the eighth organic compound in the fourth layer becomes lower from the light-emitting layer side to the cathode side.

In addition, another embodiment of the present invention is a display apparatus including a first light emitting device and a first color conversion layer. The first color conversion layer contains a first substance that absorbs light to emit light. Luminescence from the first light emitting device is incident to the first color conversion layer. The first light emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a first layer, a second layer, a third layer, a light-emitting layer, and a fourth layer in this order from the anode side. The first layer is in contact with the anode. The fourth layer is in contact with the light-emitting layer. The first layer includes a first organic compound and a second organic compound. The second layer includes a third organic compound. The third layer comprises a fourth organic compound. The light-emitting layer includes a fifth organic compound and a sixth organic compound. The fourth layer includes a seventh organic compound and an eighth organic compound. The first organic compound is an organic compound that exhibits an electron accepting property with respect to the second organic compound. The second organic compound includes a first hole-transporting skeleton. The third organic compound includes a second hole-transporting skeleton. The fourth organic compound includes a third hole-transporting skeleton. The fifth organic compound is a luminescent center substance. The HOMO level of the second organic compound is-5.7 eV or more and-5.4 eV or less. The first hole-transporting skeleton, the second hole-transporting skeleton, and the third hole-transporting skeleton each independently represent any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. The seventh organic compound is an organic compound having an anthracene skeleton. The eighth organic compound is an organic complex of an alkali metal or an alkaline earth metal.

In addition, another embodiment of the present invention is a light-emitting device having any of the above structures, wherein an electron mobility of the seventh organic compound is smaller than an electron mobility of the sixth organic compound.

Another embodiment of the present invention is a light-emitting device having any of the above structures, wherein a difference between the HOMO level of the fourth organic compound and the HOMO level of the third organic compound is 0.2eV or less.

Another embodiment of the present invention is a light-emitting device having any of the above structures, wherein the HOMO level of the fourth organic compound is deeper than the HOMO level of the third organic compound.

Another embodiment of the present invention is a light-emitting device having any one of the above structures, wherein the second organic compound is an organic compound having a dibenzofuran skeleton.

Another embodiment of the present invention is a light-emitting device having any one of the above structures, wherein the second organic compound and the third organic compound are the same substance.

In addition, another embodiment of the present invention is a light-emitting device having any of the above structures, wherein the fifth organic compound is a blue fluorescent material.

Another embodiment of the present invention is a light-emitting apparatus having any of the above-described configurations, wherein a degradation curve indicating a change in luminance of light emission obtained when a constant current is supplied to the first light-emitting device has a maximum value.

Another embodiment of the present invention is a light-emitting device having any one of the above-described structures, wherein the first substance that absorbs light to emit light is a quantum dot.

Another embodiment of the present invention is a light-emitting device having any one of the above structures, wherein the first light-emitting device has a microcavity structure.

In addition, another embodiment of the present invention is a light-emitting device having any one of the above structures, further including a second light-emitting device and a second color conversion layer. The second color conversion layer contains a second substance that absorbs light to emit light. Luminescence from the second light emitting device is incident on the second color conversion layer. The second light emitting device has the same structure as the first light emitting device. The wavelength of the luminescence from the first substance is different from the wavelength of the luminescence from the second substance.

In addition, another embodiment of the present invention is a light-emitting device having the above structure, wherein the second substance is a quantum dot.

In addition, another embodiment of the present invention is a light-emitting apparatus having the above structure, wherein the second light-emitting device has a microcavity structure.

In addition, another embodiment of the present invention is a light-emitting device having the above structure, further including a third light-emitting device. The third light emitting device has the same structure as the first light emitting device. The light emission from the third light emitting device is emitted to the outside of the light emitting apparatus without passing through the color conversion layer.

Another embodiment of the present invention is a light-emitting device having the above structure, further including a third light-emitting device and a structure having a function of scattering light. The third light emitting device has the same structure as the first light emitting device. Light emitted from the third light-emitting device is emitted to the outside of the light-emitting apparatus through the structure having the function of scattering light.

In another embodiment of the present invention, the light-emitting device having the above-described configuration further includes a third light-emitting device, a first colored layer, a second colored layer, and a resin layer. Light emitted from the first light emitting device is emitted through the first color conversion layer and the first colored layer. Light emitted from the second light-emitting device is emitted through the second color conversion layer and the second colored layer. The third light emitting device has the same structure as the first light emitting device. Light emission from the third light emitting device is emitted through the resin layer.

In addition, another embodiment of the present invention is a light-emitting apparatus having the above structure, wherein the third light-emitting device has a microcavity structure.

In another embodiment of the present invention, the electronic device includes a sensor, an operation button, a speaker, or a microphone in the above configuration.

In another embodiment of the present invention, a light-emitting device including the transistor or the substrate in the above-described structure is provided.

Another embodiment of the present invention is a lighting device including the housing in the above configuration.

Note that in this specification, a light-emitting device includes an image display device using a light-emitting device in its category. In addition, the light-emitting device may further include the following modules: a module in which a light emitting device is mounted with a connector such as an anisotropic conductive film or a Tape Carrier Package (TCP); a module of a printed circuit board is arranged at the end part of the TCP; and a module in which an Integrated Circuit (IC) is directly mounted on the light emitting device by a Chip On Glass (COG) method. Further, the lighting device and the like may include a light-emitting device.

One embodiment of the present invention can provide a novel light emitting device. In addition, another embodiment of the present invention can provide a light-emitting device having a long lifetime. In addition, another embodiment of the present invention can provide a light-emitting device having excellent light-emitting efficiency. In addition, another embodiment of the present invention can provide a light-emitting device with low driving voltage.

In addition, another embodiment of the present invention can provide a light-emitting device, an electronic device, and a display device with high reliability. In addition, another embodiment of the present invention can provide a light-emitting device, an electronic device, and a display device with low power consumption.

Note that the description of these effects does not hinder the existence of other effects. In addition, one embodiment of the present invention does not necessarily have all of the above-described effects. Effects other than these effects are apparent from the descriptions of the specification, the drawings, the claims, and the like, and can be extracted from the descriptions.

Drawings

Fig. 1A and 1B are schematic views of a light-emitting device.

Fig. 2A to 2C are schematic views of a light emitting device.

Fig. 3A and 3B each show a light emitting region of the light emitting device.

Fig. 4A and 4B each show a light emitting region of the light emitting device.

Fig. 5A to 5C are schematic views each showing a light emitting device.

Fig. 6A to 6C are schematic views each showing a light emitting device.

Fig. 7A and 7B are schematic views each showing a light-emitting device.

Fig. 8A is a top view of the display device, and fig. 8B is a cross-sectional view of the display device.

Fig. 9A and 9B are sectional views each showing a light emitting device.

Fig. 10 is a sectional view of a light emitting device.

Fig. 11A, 11B1, 11B2, and 11C each illustrate an electronic device.

Fig. 12A to 12C each show an electronic apparatus.

Fig. 13 shows an in-vehicle display device and an illumination device.

Fig. 14A and 14B illustrate an electronic apparatus.

Fig. 15A to 15C illustrate electronic apparatuses.

Fig. 16 shows the structure of an electron-only element.

Fig. 17 is a graph showing current density-voltage characteristics of the electron-only element.

Fig. 18 is a graph showing that the direct-current voltage is 7.0V and the ratio of ZADN to Liq is 1: graph of the frequency characteristic of the capacitance C at 1.

Fig. 19 is a graph showing that the direct-current voltage is 7.0V and the ratio of ZADN to Liq is 1: graph of the frequency characteristic of- Δ B at 1.

Fig. 20 is a graph showing the electric field intensity dependence of the electron mobility of each organic compound.

Fig. 21 is a schematic view of a light-emitting device.

Fig. 22A to 22D are graphs illustrating the concentration of the electron transport layer.

Fig. 23 is a perspective view showing a configuration example of the semiconductor device.

Fig. 24A and 24B are perspective views showing a structural example of the semiconductor device.

Fig. 25A and 25B are sectional views showing a structural example of a transistor.

Fig. 26 shows an electronic apparatus.

Fig. 27 is a graph showing the temporal change in normalized luminance of the device of the embodiment.

Fig. 28 is a graph showing the temporal change in the normalized luminance of the device of the embodiment.

Fig. 29 is a graph showing the temporal change in normalized luminance of the device of the embodiment.

Detailed Description

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the following description, and those skilled in the art can easily understand that the mode and details thereof can be changed into various forms without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below.

(embodiment mode 1)

In recent years, color conversion techniques using Quantum Dots (QDs) have been put into practical use in the fields of liquid crystal displays and the like. QDs are semiconductor nanocrystals with a size of several nm and comprise 1 × 10³1 to 10⁶Around one atom. Electrons, holes and excitons are confined in the QDs, thus creating discrete energy states, and the energy movement depends on the size of the QDs. That is, even QDs made of the same substance have different emission wavelengths according to size, so that the emission wavelength can be easily adjusted by changing the size of the QDs used.

In addition, since the dispersibility of the QDs limits the phase relaxation, the peak width of the emission spectrum of the quantum dot is narrow. Thus, light emission with high color purity can be obtained. That is, by using the color conversion layer using QDs, light emission with high color purity can be obtained, and light emission covering the color gamut rec.2020 corresponding to the bt.2020 standard and the bt.2100 standard can be obtained.

Like the color conversion layer using a luminescent substance of an organic compound, the color conversion layer using the QD converts light emitted from the light emitting device into light having a longer wavelength by photoluminescence that absorbs the light emitted from the light emitting device to re-emit the light. Therefore, when the color conversion layer is used for a display, the following structure is adopted: the blue light having the shortest wavelength among the three primary colors required for reproducing full color is first obtained from the light emitting device, and then green and red lights are obtained by color conversion.

That is, in a display employing a color conversion scheme, characteristics of a blue light emitting device used dominate most of device characteristics, and thus a blue light emitting device having better characteristics is required.

As shown in fig. 1A, a light-emitting apparatus according to an embodiment of the present invention includes a pixel 208 including a light-emitting device 207 and a color conversion layer 205, and light emitted from the light-emitting device 207 is incident on the color conversion layer 205. The light-emitting device 207 has an EL layer 202 between a first electrode 201 and a second electrode 203. The color conversion layer 205 preferably includes QDs and has a function of absorbing incident light and emitting light of a predetermined wavelength. When the color conversion layer 205 contains QD, light emission with good color purity and a narrow peak width of the emission spectrum can be obtained.

The color conversion layer 205 includes a substance having a function of absorbing incident light and emitting light of a desired wavelength. As the substance having a function of absorbing incident light and emitting light of a desired wavelength, various light-emitting substances such as inorganic materials and organic materials exhibiting photoluminescence can be used. Particularly, QD which is an inorganic material can obtain luminescence with good color purity and narrow peak width. In addition, QD which is an inorganic substance is also very suitable for the reason described above, because QD has high intrinsic stability and the theoretical internal quantum efficiency is almost 100%.

The QD-containing color conversion layer 205 may be formed by coating a QD solvent dispersed therein, drying it, and firing it. In addition, flakes in which QDs are dispersed in advance have also been developed. The respective application of the colors can be performed by the following method: a droplet discharge method such as ink jet or a printing method; alternatively, a solvent in which QDs are dispersed is applied to the surface where the color conversion layer 205 is formed, cured (dried, fired, cured, or the like), and then etched by photolithography or the like.

The QD may include nano-sized particles of a group 14 element, a group 15 element, a group 16 element, a compound containing a plurality of group 14 elements, a compound of an element belonging to groups 4 to 14 and a group 16 element, a compound of a group two element and a group 16 element, a compound of a group 13 element and a group 15 element, a compound of a group 13 element and a group 17 element, a compound of a group 14 element and a group 15 element, a compound of a group 11 element and a group 17 element, iron oxides, titanium oxides, sulfur spinel (spinel), various semiconductor clusters, metal halide perovskite materials, and the like.

Specifically, there may be mentioned cadmium selenide (CdSe), cadmium sulfide (CdS), cadmium telluride (CdTe), zinc selenide (ZnSe), zinc oxide (ZnO), zinc sulfide (ZnS), zinc telluride (ZnTe), mercury sulfide (HgS), mercury selenide (HgSe), mercury telluride (HgTe), indium arsenide (InAs), indium phosphide (InP), gallium arsenide (GaAs), gallium phosphide (GaP), indium nitride (InN), gallium nitride (GaN), indium antimonide (InSb), gallium antimonide (GaSb), aluminum phosphide (AlP), aluminum arsenide (AlAs), aluminum antimonide (AlSb), lead (II) selenide (PbSe), lead (II) telluride (PbTe), lead (II) sulfide (PbS), indium selenide (In)₂Se₃) Indium telluride (In)₂Te₃) Indium sulfide (In)₂S₃) Gallium selenide (Ga)₂Se₃) Arsenic (III) sulfide (As)₂S₃) Arsenic (III) selenide (As)₂Se₃) Arsenic (III) telluride (As)₂Te₃) Antimony (III) sulfide (Sb)₂S₃) Antimony (III) selenide (Sb)₂Se₃) Antimony (III) telluride (Sb)₂Te₃) Bismuth (III) sulfide (Bi)₂S₃) Bismuth (III) selenide (Bi)₂Se₃) Bismuth (III) telluride (Bi)₂Te₃) Silicon (Si), silicon carbide (SiC), germanium (Ge), tin (Sn), selenium (Se), tellurium (Te), boron B, carbon C, phosphorus (P), Boron Nitride (BN), Boron Phosphide (BP), Boron Arsenide (BAs), nitrogenAluminum nitride (AlN), aluminum sulfide (Al)₂S₃) Barium sulfide (BaS), barium selenide (BaSe), barium telluride (BaTe), calcium sulfide (CaS), calcium selenide (CaSe), calcium telluride (CaTe), beryllium sulfide (BeS), beryllium selenide (BeSe), beryllium telluride (BeTe), magnesium sulfide (MgS), magnesium selenide (MgSe), germanium sulfide (GeS), germanium selenide (GeSe), germanium telluride (GeTe), tin sulfide (IV) (SnS)₂) Tin (II) sulfide (SnS), tin (II) selenide (SnSe), tin (II) telluride (SnTe), lead (II) oxide (PbO), copper (I) fluoride (CuF), copper (I) chloride (CuCl), copper (I) bromide (CuBr), copper (I) iodide (CuI), copper (I) oxide (Cu)₂O), copper (I) selenide (Cu)₂Se), nickel (II) oxide (NiO), cobalt (II) oxide (CoO), cobalt (II) sulfide (CoS) and ferroferric oxide (Fe)₃O₄) Iron (II) sulfide (FeS), manganese (II) oxide (MnO), molybdenum (IV) sulfide (MoS)₂) Vanadium (II) oxide (VO), vanadium (IV) oxide (VO)₂) Tungsten (IV) oxide (WO)₂) Tantalum (V) oxide (Ta)₂O₅) Titanium oxide (TiO)₂、Ti₂O₅、Ti₂O₃、Ti₅O₉Etc.), zirconia (ZrO)₂) Silicon nitride (Si)₃N₄) Germanium nitride (Ge)₃N₄) Alumina (Al)₂O₃) Barium titanate (BaTiO)₃) Selenium zinc cadmium compounds (CdZnSe), indium arsenic phosphorus compounds (InAsP), cadmium selenium sulfur compounds (CdSeS), cadmium selenium tellurium compounds (CdSeTe), indium gallium arsenic compounds (InGaAs), indium gallium selenium compounds (InGaSe), indium selenium sulfur compounds (InSeS), copper indium sulfur compounds (e.g., CuInS)₂) And combinations thereof, and the like, but is not limited thereto. In addition, so-called alloy-type QDs having a composition represented by an arbitrary ratio may be used. For example, because of CdS_xSe_(1-x)Alloy QDs represented by (x is an arbitrary number from 0 to 1) can change the emission wavelength by changing x, and therefore are one of effective means for obtaining blue emission.

As the QD, a Core type QD, a Core Shell (Core Shell) type QD, a Core Multishell (Core Multishell) type QD, or the like can be used. When the shell is covered with the core and is formed using other inorganic materials having a wider band gap, the influence of defects or dangling bonds existing on the surface of the nanocrystal can be reduced. The above structure can greatly improve the quantum efficiency of light emission, and therefore, it is preferable to use a core-shell or core-shell QD. Examples of the material of the shell include zinc sulfide (ZnS) and zinc oxide (ZnO).

In addition, in the intermediate, the ratio of atoms on the surface of QDs is high, so that reactivity is high and aggregation is likely to occur. Therefore, the surface of QDs is preferably attached with a protecting agent or provided with a protecting group. By attaching a protective agent or providing a protective group, aggregation can be prevented and solubility to a solvent can be improved. In addition, electrical stability can also be improved by reducing reactivity. Examples of the protecting agent (or protecting group) include: polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether and polyoxyethylene stearyl ether; trialkylphosphines such as tripropylphosphine, tributylphosphine, trihexylphosphine and trioctylphosphine; polyoxyethylene alkylphenyl ethers such as polyoxyethylene n-octylphenyl ether and polyoxyethylene n-nonylphenyl ether; tertiary amines such as tri (n-hexyl) amine, tri (n-octyl) amine and tri (n-decyl) amine; organic phosphorus compounds such as tripropylphosphine oxide, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide; polyethylene glycol diesters such as polyethylene glycol dilaurate and polyethylene glycol distearate; organic nitrogen compounds such as nitrogen-containing aromatic compounds including pyridine, lutigdine, pansy, and quinoline; aminoalkanes such as hexylamine, octylamine, decylamine, dodecylamine, tetradecylamine, hexadecylamine and octadecylamine; dialkyl sulfides such as dibutyl sulfide; dialkyl sulfoxides such as dimethyl sulfoxide and dibutyl sulfoxide; organic sulfur compounds such as sulfur-containing aromatic compounds including thiophene; higher fatty acids such as palmitic acid, stearic acid, and oleic acid; alcohols of ethanol; sorbitan fatty acid esters; fatty acid-modified polyesters; tertiary amine modified polyurethanes; polyethyleneimines, and the like.

When the substance contained in the color conversion layer 205 is QD, the QD has a continuous absorption spectrum in which the light absorption intensity is higher from the vicinity of the emission wavelength of the QD itself to a shorter wavelength side. For this reason, when a display of a plurality of emission colors is required, the light emitting devices of the pixels of the respective colors may contain the same substance as the emission center substance, as shown in fig. 1B, and it is not necessary to separately manufacture the light emitting devices for each color of the pixels, so that the light emitting apparatus can be manufactured at a relatively low cost.

Fig. 1B shows three pixels, which are a pixel for displaying blue, a pixel for displaying green, and a pixel for displaying red, as an example. The first pixel 208B displays blue light emission. The first pixel 208B includes a first electrode 201B and a second electrode 203. One of them is a reflective electrode, the other is a semi-transmissive and semi-reflective electrode, and one is an anode and the other is a cathode. Similarly, the second pixel 208G for displaying green light emission and the third pixel 208R for displaying red light emission are shown in the figure. The second pixel 208G includes a first electrode 201G and a second electrode 203. The third pixel 208R includes a first electrode 201R and a second electrode 203. Fig. 1B shows a structure in which the first electrodes 201B, 201G, and 201R are reflective electrodes and function as anodes, and the second electrode 203 is a semi-transmissive and semi-reflective electrode. First electrodes 201B, 201G, and 201R are formed on the insulator 200. In order to prevent light mixing between adjacent pixels, the black matrix 206 is preferably provided between the pixels. The black matrix 206 may also be used as a bank (bank) when forming a color conversion layer by an inkjet method or the like.

In the first pixel 208B, the second pixel 208G, and the third pixel 208R, the EL layer 202 is interposed between the second electrode 203 and the first electrodes 201B, 201G, and 201R. The EL layer 202 may be shared among the first pixel 208B, the second pixel 208G, and the third pixel 208R, or may be provided separately from each other, but a structure in which one EL layer 202 is shared among a plurality of pixels is easy to manufacture, which is advantageous in terms of cost. In addition, although the EL layer 202 is normally configured by a plurality of layers having different functions, a structure may be adopted in which a part of the EL layer 202 is shared by a plurality of pixels and the other part is independent of each other in each pixel.

The first pixel 208B, the second pixel 208G, and the third pixel 208R include a first light emitting device 207B, a second light emitting device 207G, and a third light emitting device 207R, respectively. Each light-emitting device includes a first electrode, a second electrode, and an EL layer. Note that fig. 1B shows a structure in which the first pixel 208B, the second pixel 208G, and the third pixel 208R include the common EL layer 202.

The first light-emitting device 207B, the second light-emitting device 207G, and the third light-emitting device 207R may have a microcavity structure by forming one of the first electrode and the second electrode as a reflective electrode and forming the other as a semi-transmissive and semi-reflective electrode. The wavelength at which resonance can occur is determined by the optical distance 209 between the reflective electrode surface and the semi-transmissive/semi-reflective electrode surface. When the wavelength at which resonance is to occur is λ and the optical distance 209 is an integral multiple of λ/2, light having the wavelength λ can be amplified. The optical distance 209 can be adjusted by adjusting a hole injection layer and a hole transport layer included in the EL layer, a transparent electrode layer formed on the reflective electrode as a part of the electrode, and the like. Since the EL layer is shared by the first light-emitting device 207B, the second light-emitting device 207G, and the third light-emitting device 207R and the emission center substance is the same in the light-emitting apparatus shown in fig. 1B, the optical distance 209 of the light-emitting devices is the same in the first pixel 208B, the second pixel 208G, and the third pixel 208R, and thus can be easily formed. Note that when the EL layer 202 is formed for each pixel, the optical distance 209 can be formed in accordance with light from the EL layer.

The protective layer 204 is disposed on the second electrode 203. The protective layer 204 is provided to protect the first, second, and third light emitting devices 207B, 207G, and 207R from a bad substance or environment. As the protective layer 204, an oxide, a nitride, a fluoride, a sulfide, a ternary compound, a metal, a polymer, or the like can be used. For example, a material containing aluminum oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, indium oxide, or the like, a material containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, gallium nitride, or the like, a nitride containing titanium and aluminum, an oxide containing aluminum and zinc, a sulfide containing manganese and zinc, a sulfide containing cerium and strontium, an oxide containing erbium and aluminum, an oxide containing yttrium and zirconium, or the like can be used.

The first color conversion layer 205G contains a substance that absorbs light from the second light-emitting device 207G to emit light. The light emitted from the second light-emitting device 207G is incident on the first color conversion layer 205G and is converted into light of a wavelength, and is emitted. The second color conversion layer 205R contains a substance that absorbs light of the third light-emitting device 207R to emit light. The light emitted from the third light-emitting device 207R is incident on the second color conversion layer 205R and is converted into light having a long wavelength, and is emitted.

Note that since the first pixel 208B emits light without passing through the color conversion layer, it is preferable that it is a pixel emitting blue light with the highest energy among the three primary colors of light. For the same reason, when the first pixel 208B, the second pixel 208G, and the third pixel 208R are made to emit the same color, the color of the emitted light is preferably blue. In this case, it is advantageous from the viewpoint of cost to use a light-emitting device containing the same substance as a luminescence center substance, but a different luminescence center substance may be used.

In addition, when a light-emitting device is not manufactured for each color of a pixel in this manner, it is preferable that the light emission of the light-emitting center substance included in the light-emitting device is blue light emission (the peak wavelength of light emission is about 420nm to 480 nm). The luminescence of the luminescence center substance was calculated from a PL spectrum in a solution state. The relative dielectric constant of the organic compound contained in the EL layer of the light-emitting device is about 3, and in order to avoid the mismatch with the emission spectrum of the light-emitting device, the relative dielectric constant of the solvent used to convert the light-emitting center substance into a solution state is preferably 1 or more and 10 or less, more preferably 2 or more and 5 or less at room temperature. Specific examples of the solvent include hexane, benzene, toluene, diethyl ether, ethyl acetate, chloroform, chlorobenzene, and dichloromethane. Further, a general-purpose solvent having a high solubility at room temperature with a relative dielectric constant of 2 to 5 is more preferable. For example, toluene or chloroform is more preferable.

Note that these pixels may also have color filters, respectively.

The light emitting device 207 has the structure shown in fig. 2A to 2C. A light-emitting device used for a light-emitting apparatus of one embodiment of the present invention is described below.

Fig. 2A is a diagram illustrating a light-emitting device used in a light-emitting apparatus of one embodiment of the present invention. A light-emitting device used in a light-emitting apparatus of one embodiment of the present invention includes a first electrode 101, a second electrode 102, and an EL layer 103. The EL layer includes a hole injection layer 111, a hole transport layer 112, a light emitting layer 113, and an electron transport layer 114. The first electrode 101, the second electrode 102, and the EL layer 103 in fig. 2A and 2B correspond to the first electrode 201, the second electrode 203, and the EL layer 202 in fig. 1A.

Note that although the electron injection layer 115 is also illustrated in the EL layer 103 in fig. 2A, the structure of the light-emitting device is not limited thereto. The layer having another function may be included as long as it has the above-described constituent elements.

The hole injection layer 111 includes a first organic compound and a second organic compound. The first organic compound exhibits electron accepting properties with respect to the second organic compound. The second organic compound is a substance having a deep HOMO level with a HOMO level of-5.7 eV or more and-5.4 eV or less. Holes can be easily injected into the hole transport layer 112 by making the second organic compound have a deeper HOMO level.

As the first organic compound, an organic compound having an electron-withdrawing group (particularly, a halogen group such as a fluoro group or a cyano group) or the like can be used. Further, a substance exhibiting an electron accepting property with respect to the second organic compound can be appropriately selected from such organic compounds. Examples of such organic compounds include 7, 7, 8, 8-tetracyano-2, 3, 5, 6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, 2, 3, 6, 7, 10, 11-hexacyan-1, 4, 5, 8, 9, 12-hexaazatriphenylene (abbreviated as HAT-CN), 1, 3, 4, 5, 7, 8-hexafluorotetracyano (hexafluoro) -naphthoquinodimethane (abbreviated as F6-TCNNQ), and 2- (7-dicyanomethylene-1, 3, 4, 5, 6, 8, 9, 10-octafluoro-7H-pyrene-2-ylidene) malononitrile. An electron-withdrawing group is bonded to a fused aromatic ring having a plurality of hetero atoms, and a compound such as HAT-CN or the like is thermally stable, and is therefore preferable. Further, the [3] axis ene derivative containing an electron-withdrawing group (particularly, a halogen group such as a fluoro group, a cyano group) is particularly preferable because it has a very high electron-accepting property. Specifically, there may be mentioned: α, α ', α ″ -1, 2, 3-cyclopropanetriylidenetris [ 4-cyano-2, 3, 5, 6-tetrafluorophenylacetonitrile ], α ', α ″ -1, 2, 3-cyclopropanetriylidenetris [2, 6-dichloro-3, 5-difluoro-4- (trifluoromethyl) phenylacetonitrile ], α ', α ″ -1, 2, 3-cyclopropanetriylidenetris [2, 3, 4, 5, 6-pentafluorophenylacetonitrile ], and the like.

The second organic compound is preferably an organic compound having a hole-transporting property, and preferably has any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. In particular, an aromatic amine having a substituent including a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine including a naphthalene ring, or an aromatic monoamine in which 9-fluorenyl group is bonded to nitrogen of the amine through arylene group may be used. Note that when these second organic compounds are substances including N, N-bis (4-biphenyl) amino groups, a light-emitting device having a long lifetime can be manufactured, and thus is preferable. Specific examples of the second organic compound include N- (4-biphenyl) -6, N-diphenylbenzo [ b ] naphtho [1, 2-d ] furan-8-amine (abbreviated as BnfABP), N-bis (4-biphenyl) -6-phenylbenzo [ b ] naphtho [1, 2-d ] furan-8-amine (abbreviated as BBABnf), 4 '-bis (6-phenylbenzo [ b ] naphtho [1, 2-d ] furan-8-yl) -4' -phenyltriphenylamine (abbreviated as BnfBB1BP), N-bis (4-biphenyl) benzo [ b ] naphtho [1, 2-d ] furan-6-amine (abbreviated as BBABnf (6)), N-bis (4-biphenyl) benzo [ b ] naphtho [1, 2-d ] furan-8-amine (abbreviated as BBABnf (8)), N-bis (4-biphenyl) benzo [ b ] naphtho [2, 3-d ] furan-4-amine (abbreviated as BBABnf (II) (4)), N-bis [4- (dibenzofuran-4-yl) phenyl ] -4-amino-p-terphenyl (abbreviated as DBfBB1TP), N- [4- (dibenzothiophene-4-yl) phenyl ] -N-phenyl-4-benzidine (abbreviated as ThBA1BP), 4- (2-naphthyl) -4', 4' -diphenyltriphenylamine (abbreviated as BBA beta NB), 4- [4- (2-naphthyl) phenyl ] -4', 4' -diphenyltriphenylamine (abbreviated as BBA beta NBi), 4- (2; 1 '-binaphthyl-6-yl) -4', 4 '-diphenyltriphenylamine (abbreviated as BBA. alpha. Nbeta. NB), 4' -diphenyl-4 '- (7; 1' -binaphthyl-2-yl) triphenylamine (abbreviated as BBA. alpha. Nbeta. NB-03), 4 '-diphenyl-4' - (7-phenyl) naphthyl-2-yltriphenylamine (abbreviated as BBAP. beta. NB-03), 4- (6; 2 '-binaphthyl-2-yl) -4', 4 '-diphenyltriphenylamine (abbreviated as BBA (. beta. N2) B), 4- (2; 2' -binaphthyl-7-yl) -4', 4' -diphenyltriphenylamine (abbreviated as BBA (. beta. N2) B-03), 4- (1; 2 '-binaphthyl-4-yl) -4', 4 '-diphenyltriphenylamine (abbreviated as BBA. beta. Nalpha NB), 4- (1; 2' -binaphthyl-5-yl) -4', 4' -diphenyltriphenylamine (abbreviated as BBA. beta. Nalpha NB-02), 4- (4-biphenyl) -4'- (2-naphthyl) -4' -phenyltriphenylamine (abbreviated as TPBiA. beta. NB), 4- (3-biphenyl) -4'- [4- (2-naphthyl) phenyl ] -4' -phenyltriphenylamine (abbreviated as mTPBiA. beta. NBi), 4- (4-biphenyl) -4'- [4- (2-naphthyl) phenyl ] -4' -phenyltriphenylamine (abbreviated as TPBiA. beta. NBi), 4- (1-naphthyl) -4 '-phenyltriphenylamine (abbreviation: α NBA1BP), 4' -bis (1-naphthyl) triphenylamine (abbreviation: α NBB1BP), 4 '-diphenyl-4 "- [4' - (carbazol-9-yl) biphenyl-4-yl ] triphenylamine (abbreviation: YGTBi1BP), 4'- [4- (3-phenyl-9H-carbazol-9-yl) phenyl ] tris (1, 1' -biphenyl-4-yl) amine (abbreviation: YGTBi1BP-02), 4- [4'- (carbazol-9-yl) biphenyl-4-yl ] -4' - (2-naphthyl) -4" -phenyltriphenylamine (abbreviation: YGTBi β NB), N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -N- [4- (1-naphthyl) phenyl ] -9, 9 '-spirobis [ 9H-fluorene ] -2-amine (abbreviated as PCBNBSF), N-bis ([1, 1' -biphenyl ] -4-yl) -9, 9 '-spirobis [ 9H-fluorene ] -2-amine (abbreviated as BBASF), N-bis ([1, 1' -biphenyl ] -4-yl) -9, 9 '-spirobis [ 9H-fluorene ] -4-amine (abbreviated as BBASF (4)), N- (1, 1' -biphenyl-2-yl) -N- (9, 9-dimethyl-9H-fluoren-2-yl) -9, 9' -spirobis [ 9H-fluoren ] -4-amine (abbreviation: oFBiSF), N- (4-biphenyl) -N- (9, 9-dimethyl-9H-fluoren-2-yl) dibenzofuran-4-amine (abbreviation: FrBiF), N- [4- (1-naphthyl) phenyl ] -N- [3- (6-phenyldibenzofuran-4-yl) phenyl ] -1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4' - (9-phenylfluoren-9-yl) triphenylamine (abbreviation: BPAFLP), 4-phenyl-3' - (9-phenylfluoren-9-yl) triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' - [4- (9-phenylfluoren-9-yl) phenyl ] triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBA1BP), 4' -diphenyl-4 "- (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBBi1BP), 4- (1-naphthyl) -4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBANB), 4' -bis (1-naphthyl) -4 "- (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBNBB), N-phenyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -9, 9' -spirobis [ 9H-fluorene ] -2-amine (abbreviation: PCBASF), N- (1, 1' -biphenyl-4-yl) -9, 9-dimethyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -9H-fluoren-2-amine (abbreviation: PCBBiF), and the like.

The hole transport layer 112 includes a first hole transport layer 112-1 and a second hole transport layer 112-2. The first hole transport layer 112-1 is located on the side closer to the first electrode 101 than the second hole transport layer 112-2. Note that the second hole transporting layer 112-2 is sometimes used also as having an electron blocking layer.

The first and second hole transport layers 112-1 and 112-2 include a third organic compound and a fourth organic compound, respectively.

The third organic compound and the fourth organic compound are preferably organic compounds having a hole-transporting property. As the third organic compound and the fourth organic compound, organic compounds that can be used as the second organic compound can be similarly used.

Preferably, the material of the second organic compound and the material of the third organic compound are selected so that the HOMO level of the third organic compound is deeper than the HOMO level of the second organic compound and the difference therebetween is 0.2eV or less. Further, it is more preferable that the second organic compound and the third organic compound are the same substance.

In addition, the HOMO level of the fourth organic compound is preferably deeper than the HOMO level of the third organic compound. Further, it is preferable to select the materials of the third organic compound and the fourth organic compound so that the difference in HOMO levels is 0.2eV or less. By making the HOMO levels of the second to fourth organic compounds have the above-described relationship, holes can be smoothly injected into each layer, and thus a state in which the driving voltage rises and holes are too small in the light-emitting layer can be prevented.

Preferably, the second to fourth organic compounds each have a hole-transporting skeleton. As the hole-transporting skeleton, a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton, which do not make the HOMO level of the organic compound too shallow, are preferably used. In addition, when the materials of the adjacent layers (for example, the second organic compound and the third organic compound or the third organic compound and the fourth organic compound) have the same hole-transporting skeleton, hole injection can be smoothly performed, and therefore, this is preferable. The hole-transporting skeleton is particularly preferably a dibenzofuran skeleton.

In addition, when the materials (for example, the second organic compound and the third organic compound or the third organic compound and the fourth organic compound) included in the adjacent layers are made to be the same material, injection of holes can be smoothly performed, and thus, this is preferable. It is particularly preferred that the second organic compound and the third organic compound are the same material.

The light emitting layer 113 includes a fifth organic compound and a sixth organic compound. The fifth organic compound is a luminescent center substance, and the sixth organic compound is a host material for dispersing the fifth organic compound.

As the luminescence center substance, a fluorescent substance, a phosphorescent substance, a substance exhibiting Thermally Activated Delayed Fluorescence (TADF), or other luminescent materials can be used. The light-emitting layer 113 may be a single layer or may include a plurality of layers containing different light-emitting materials. Note that in one embodiment of the present invention, the light-emitting layer 113 can be used more suitably in the case where it is a layer which exhibits fluorescence emission, particularly, a layer which exhibits blue fluorescence emission.

Examples of materials that can be used as a fluorescent substance in the light-emitting layer 113 include the following. Note that other fluorescent substances may be used in addition to these.

For example, 5, 6-bis [4- (10-phenyl-9-anthryl) phenyl group]-2, 2 '-bipyridine (PAP 2BPy for short), 5, 6-bis [4' - (10-phenyl-9-anthryl) biphenyl-4-yl]-2, 2' -bipyridine (PAPP 2BPy), N ' -diphenyl-N, N ' -bis [4- (9-phenyl-9H-fluoren-9-yl) phenyl]Pyrene-1, 6-diamine (1, 6FLPAPRn for short), N '-bis (3-methylphenyl) -N, N' -bis [3- (9-phenyl-9H-fluoren-9-yl) phenyl]Pyrene-1, 6-diamine (1, 6mM FLPAPPrn for short), N' -bis [4- (9H-carbazol-9-yl) phenyl]-N, N '-diphenylstilbene-4, 4' -diamine (abbreviation: YGA2S), 4- (9H-carbazole-9-Phenyl) -4' - (10-phenyl-9-anthracenyl) triphenylamine (abbreviation: YGAPA), 4- (9H-carbazol-9-yl) -4' - (9, 10-diphenyl-2-anthryl) triphenylamine (abbreviation: 2YGAPPA), N, 9-diphenyl-N- [4- (10-phenyl-9-anthryl) phenyl]-9H-carbazole-3-amine (PCAPA), perylene, 2, 5, 8, 11-tetra (tert-butyl) perylene (TBP), 4- (10-phenyl-9-anthryl) -4'- (9-phenyl-9H-carbazole-3-yl) triphenylamine (PCBAPA), N' - (2-tert-butylanthracene-9, 10-diylbis-4, 1-phenylene) bis [ N, N ', N' -triphenyl-1, 4-phenylenediamine](abbr.: DPABPA), N, 9-diphenyl-N- [4- (9, 10-diphenyl-2-anthryl) phenyl]-9H-carbazole-3-amine (2 PCAPPA for short), N- [4- (9, 10-diphenyl-2-anthryl) phenyl]-N, N ', N ' -triphenyl-1, 4-phenylenediamine (abbreviated as 2DPAPPA), N, N, N ', N ', N ' -octaphenyldibenzo [ g, p ]](chrysene) -2, 7, 10, 15-tetramine (abbreviation: DBC1), coumarin 30, N- (9, 10-diphenyl-2-anthryl) -N, 9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N- [9, 10-bis (1, 1' -biphenyl-2-yl) -2-anthryl]-N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N- (9, 10-diphenyl-2-anthracenyl) -N, N ', N ' -triphenyl-1, 4-phenylenediamine (abbreviation: 2DPAPA), N- [9, 10-bis (1, 1' -biphenyl-2-yl) -2-anthracenyl]-N, N ', N ' -triphenyl-1, 4-phenylenediamine (2 DPABPhA for short), 9, 10-bis (1, 1' -biphenyl-2-yl) -N- [4- (9H-carbazol-9-yl) phenyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N, 9-triphenylanthracene-9-amine (abbreviation: DPhAPHA), coumarin 545T, N, N '-diphenylquinacridone (abbreviation: DPQd), rubrene, 5, 12-bis (1, 1' -biphenyl-4-yl) -6, 11-diphenyltetracene (abbreviation: BPT), 2- (2- {2- [4- (dimethylamino) phenyl ] tetraphenyl]Vinyl } -6-methyl-4H-pyran-4-ylidene) malononitrile (abbreviation: DCM1), 2- { 2-methyl-6- [2- (2, 3, 6, 7-tetrahydro-1H, 5H-benzo [ ij ]]Quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene malononitrile (abbreviation: DCM2), N, N, N ', N' -tetrakis (4-methylphenyl) naphthacene-5, 11-diamine (abbreviation: p-mPTHTD), 7, 14-diphenyl-N, N, N ', N' -tetrakis (4-methylphenyl) acenaphtho [1, 2-a ]]Fluoranthene-3, 10-diamine (p-mPHAFD) and 2- { 2-isopropyl6- [2- (1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H-benzo [ ij ]]Quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene malononitrile (abbreviated as DCJTI), 2- { 2-tert-butyl-6- [2- (1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H-benzo [ ij ]]Quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene malononitrile (abbreviated as DCJTB), 2- (2, 6-bis {2- [4- (dimethylamino) phenyl group)]Vinyl } -4H-pyran-4-ylidene) malononitrile (abbreviation: BisDCM), 2- {2, 6-bis [2- (8-methoxy-1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H-benzo [ ij ]]Quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene malononitrile (BisDCJTM for short), N' - (pyrene-1, 6-diyl) bis [ (6, N-diphenylbenzo [ b ]]Naphtho [1, 2-d ]]Furan) -8-amines](abbreviation: 1, 6BnfAPrn-03), 3, 10-bis [ N- (9-phenyl-9H-carbazol-2-yl) -N-phenylamino]Naphtho [2, 3-b; 6, 7-b']Bis-benzofurans (abbreviation: 3, 10PCA2Nbf (IV) -02), 3, 10-bis [ N- (dibenzofuran-3-yl) -N-phenylamino]Naphtho [2, 3-b; 6, 7-b']Bis-benzofurans (abbreviated as 3, 10FrA2Nbf (IV) -02), and the like. In particular, fused aromatic diamine compounds represented by pyrene diamine compounds such as 1, 6FLPAPrn, 1, 6mMemFLPAPrn, 1, 6 bnfparn-03 and the like are preferable because they have suitable hole trapping properties and good light-emitting efficiency and reliability.

When a phosphorescent material is used as a light-emitting center substance in the light-emitting layer 113, examples of materials that can be used include the following.

For example, a material such as tris {2- [5- (2-methylphenyl) -4- (2, 6-dimethylphenyl) -4H-1, 2, 4-triazol-3-yl-. kappa.N 2]Phenyl-kappa C iridium (III) (abbreviation: [ Ir (mpptz-dmp) ]₃]) Tris (5-methyl-3, 4-diphenyl-4H-1, 2, 4-triazole) iridium (III) (abbreviation: [ Ir (Mptz)₃]) Tris [4- (3-biphenyl) -5-isopropyl-3-phenyl-4H-1, 2, 4-triazole]Iridium (III) (abbreviation: [ Ir (iPrptz-3b)₃]) And the like organometallic iridium complexes having a 4H-triazole skeleton; tris [ 3-methyl-1- (2-methylphenyl) -5-phenyl-1H-1, 2, 4-triazole]Iridium (III) (abbreviation: [ Ir (Mptz1-mp)₃]) Tris (1-methyl-5-phenyl-3-propyl-1H-1, 2, 4-triazole) iridium (III) (abbreviation: [ Ir (Prptz1-Me)₃]) Organometallic iridium complex having 1H-triazole skeleton(ii) a fac-tris [1- (2, 6-diisopropylphenyl) -2-phenyl-1H-imidazole]Iridium (III) (abbreviation: [ Ir (iPrpmi)₃]) Tris [3- (2, 6-dimethylphenyl) -7-methylimidazo [1, 2-f ]]Phenanthridino (phenanthrinato)]Iridium (III) (abbreviation: [ Ir (dmpimpt-Me)₃]) And the like organometallic iridium complexes having an imidazole skeleton; and bis [2- (4', 6' -difluorophenyl) pyridinato-N, C²']Iridium (III) tetrakis (1-pyrazolyl) borate (FIr 6 for short), bis [2- (4', 6' -difluorophenyl) pyridinato-N, C^2']Iridium (III) picolinate (FIrpic), bis {2- [3', 5' -bis (trifluoromethyl) phenyl]pyridinato-N, C^2'Iridium (III) picolinate (abbreviation: [ Ir (CF)₃ppy)₂(pic)]) Bis [2- (4', 6' -difluorophenyl) pyridinato-N, C^2']And organometallic iridium complexes in which a phenylpyridine derivative having an electron-withdrawing group is used as a ligand, such as iridium (III) acetylacetonate (FIr (acac)). The above compound is a compound emitting blue phosphorescence, and is a compound having a light emission peak at 440nm to 520 nm.

In addition, there may be mentioned: tris (4-methyl-6-phenylpyrimidino) iridium (III) (abbreviation: [ Ir (mppm))₃]) Tris (4-tert-butyl-6-phenylpyrimidinate) iridium (III) (abbreviation: [ Ir (tBuppm)₃]) And (acetylacetonate) bis (6-methyl-4-phenylpyrimidinate) iridium (III) (abbreviation: [ Ir (mppm)₂(acac)]) And (acetylacetonate) bis (6-tert-butyl-4-phenylpyrimidinate) iridium (III) (abbreviation: [ Ir (tBuppm)₂(acac)]) And (acetylacetonate) bis [6- (2-norbornyl) -4-phenylpyrimidine]Iridium (III) (abbreviation: [ Ir (nbppm)₂(acac)]) And (acetylacetonate) bis [ 5-methyl-6- (2-methylphenyl) -4-phenylpyrimidine]Iridium (III) (simply: Ir (mppm))₂(acac)), (acetylacetonate) bis (4, 6-diphenylpyrimidinate) iridium (III) (abbreviation: [ Ir (dppm)₂(acac)]) And the like organometallic iridium complexes having a pyrimidine skeleton; (Acetylacetonato) bis (3, 5-dimethyl-2-phenylpyrazinato) iridium (III) (abbreviation: [ Ir (mppr-Me)₂(acac)]) And (acetylacetonate) bis (5-isopropyl-3-methyl-2-phenylpyrazinato) iridium (III) (abbreviation: [ Ir (mppr-iPr)₂(acac)]) And the like organometallic iridium complexes having a pyrazine skeleton; tris (2-phenylpyridinato-N, C)^2') Iridium (III) (simple)Weighing: [ Ir (ppy)₃]) Bis (2-phenylpyridinato-N, C)^2') Iridium (III) acetylacetone (abbreviation: [ Ir (ppy)₂(acac)]) Bis (benzo [ h ]]Quinoline) iridium (III) acetylacetone (abbreviation: [ Ir (bzq)₂(acac)]) Tris (benzo [ h ]) or a salt thereof]Quinoline) iridium (III) (abbreviation: [ Ir (bzq)₃]) Tris (2-phenylquinoline-N, C)^2']Iridium (III) (abbreviation: [ Ir (pq))₃]) Bis (2-phenylquinoline-N, C)^2') Iridium (III) acetylacetone (abbreviation: [ Ir (pq)₂(acac)]) And the like organometallic iridium complexes having a pyridine skeleton; and tris (acetylacetonate) (monophenanthroline) terbium (III) (abbreviation: [ Tb (acac))₃(Phen)]) And the like. The above substances are mainly green phosphorescent emitting compounds and have a light emission peak at 500nm to 600 nm. In addition, an organometallic iridium complex having a pyrimidine skeleton is particularly preferable because of its particularly excellent reliability and light emission efficiency.

In addition, there may be mentioned: (diisobutyl methanolate) bis [4, 6-bis (3-methylphenyl) pyrimidinylidium (III) (abbreviation: [ Ir (5 mddppm) ]₂(dibm)]) Bis [4, 6-bis (3-methylphenyl) pyrimidino) (dipivaloylmethanato) iridium (III) (abbreviation: [ Ir (5 mddppm)₂(dpm)]) Bis [4, 6-di (naphthalen-1-yl) pyrimidinium radical](Dipivaloylmethanato) iridium (III) (abbreviation: [ Ir (d1npm)₂(dpm)]) And the like organometallic iridium complexes having a pyrimidine skeleton; (Acetylacetonato) bis (2, 3, 5-triphenylpyrazinato) iridium (III) (abbreviation: [ Ir (tppr)₂(acac)]) Bis (2, 3, 5-triphenylpyrazinyl) (dipivaloylmethanyl) iridium (III) (abbreviation: [ Ir (tppr)₂(dpm)]) And (acetylacetonate) bis [2, 3-bis (4-fluorophenyl) quinoxaliniridium (III) (abbreviation: [ Ir (Fdpq)₂(acac)]) And the like organometallic iridium complexes having a pyrazine skeleton; tris (1-phenylisoquinoline-N, C)^2’) Iridium (III) (abbreviation: [ Ir (piq)₃]) Bis (1-phenylisoquinoline-N, C)^2’) Iridium (III) acetylacetone (abbreviation: [ Ir (piq)₂(acac)]) And the like organometallic iridium complexes having a pyridine skeleton; 2, 3, 7, 8, 12, 13, 17, 18-octaethyl-21H, 23H-porphyrin platinum (II) (abbreviation [ PtOEP ]]) And the like platinum complexes; and tris (1, 3-diphenyl-1, 3-propanedione (propa)Indionoto)) (monophenanthroline) europium (III) (abbreviation: [ Eu (DBM)₃(Phen)]) Tris [1- (2-thenoyl) -3, 3, 3-trifluoroacetone](Monophenanthroline) europium (III) (abbreviation: [ Eu (TTA))₃(Phen)]) And the like. The above compound emits red phosphorescence and has a light emission peak at 600nm to 700 nm. In addition, the organometallic iridium complex having a pyrazine skeleton can provide red light emission with good chromaticity.

In addition to the phosphorescent compound, a known phosphorescent material may be selected and used.

As the TADF material, fullerene and its derivative, acridine and its derivative, eosin derivative, and the like can be used. Examples of the metal-containing porphyrin include magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), and the like. Examples of the metal-containing porphyrin include protoporphyrin-tin fluoride complexes (SnF) represented by the following structural formula₂(Proto IX)), mesoporphyrin-tin fluoride complex (SnF)₂(Meso IX)), hematoporphyrin-tin fluoride complex (SnF)₂(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF)₂(Copro III-4Me), octaethylporphyrin-tin fluoride complex (SnF)₂(OEP)), protoporphyrin-tin fluoride complex (SnF)₂(Etio I)) and octaethylporphyrin-platinum chloride complex (PtCl)₂OEP), and the like.

[ chemical formula 1]

Further, 2- (biphenyl-4-yl) -4, 6-bis (12-phenylindole [2, 3-a ] carbazol-11-yl) -1, 3, 5-triazine (abbreviated as PIC-TRZ), 9- (4, 6-diphenyl-1, 3, 5-triazin-2-yl) -9 ' -phenyl-9H, 9' H-3, 3' -bicarbazole (abbreviated as PCCZTzn), 2- {4- [3- (N-phenyl-9H-carbazol-3-yl) -9H-carbazol-9-yl ] phenyl } -4, 6-diphenyl-1, 3, 5-triazine (abbreviated as PCCZPTzn) represented by the following structural formula, 2- [4- (10H-phenoxazin-10-yl) phenyl ] -4, 6-diphenyl-1, 3, 5-triazine (abbreviation: PXZ-TRZ), 3- [4- (5-phenyl-5, 10-dihydrophenazine-10-yl) phenyl ] -4, 5-diphenyl-1, 2, 4-triazole (abbreviation: PPZ-3TPT), 3- (9, 9-dimethyl-9H-acridin-10-yl) -9H-xanthen-9-one (abbreviation: ACRXTN), bis [4- (9, 9-dimethyl-9, 10-dihydroacridin) phenyl ] sulfolane (abbreviation: DMAC-DPS), 10-phenyl-10H, heterocyclic compounds having one or both of a pi-electron-rich heteroaromatic ring and a pi-electron-deficient heteroaromatic ring such as 10 ' H-spiro [ acridine-9, 9' -anthracene ] -10 ' -one (ACRSA). The heterocyclic compound has a pi-electron-rich heteroaromatic ring and a pi-electron-deficient heteroaromatic ring, and is preferably high in both electron-transporting property and hole-transporting property. In particular, among the skeletons having a pi-electron deficient heteroaromatic ring, a pyridine skeleton, a diazine skeleton (a pyrimidine skeleton, a pyrazine skeleton, a pyridazine skeleton) and a triazine skeleton are preferable because they are stable and have good reliability. In particular, a benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzofuropyrazine skeleton, or benzothienopyrazine skeleton is preferable because it has high receptogenicity and good reliability. In addition, in the skeleton having a pi-electron-rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton are stable and have good reliability, and therefore, it is preferable to have at least one of the above-described skeletons. Further, a dibenzofuran skeleton is preferably used as the furan skeleton. The thiophene skeleton is preferably a dibenzothiophene skeleton. As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3- (9-phenyl-9H-carbazol-3-yl) -9H-carbazole skeleton is particularly preferably used. In the case where a pi-electron-rich heteroaromatic ring is directly bonded to a pi-electron-deficient heteroaromatic ring, it is particularly preferable that the electron donating property and the electron accepting property of the pi-electron-rich heteroaromatic ring are both high and the energy difference between the S1 level and the T1 level is small, so that thermally activated delayed fluorescence can be efficiently obtained. Note that an aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the pi-electron deficient heteroaromatic ring. Further, as the pi-electron-rich skeleton, an aromatic amine skeleton, a phenazine skeleton, or the like can be used. As the pi-deficient electron skeleton, a xanthene skeleton, a thioxanthene dioxide (thioxanthene dioxide) skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring or heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, and the like can be used. Thus, a pi-electron deficient skeleton and a pi-electron rich skeleton may be used in place of at least one of the pi-electron deficient heteroaromatic ring and the pi-electron rich heteroaromatic ring.

[ chemical formula 2]

The TADF material is a material having a small difference between the S1 energy level and the T1 energy level and having a function of converting triplet excitation energy into singlet excitation energy by intersystem crossing. Therefore, TADF materials are capable of up-converting (up-converting) triplet excitation energy to singlet excitation energy (i.e., intersystem crossing) by a minute amount of thermal energy and capable of efficiently generating singlet excited states. Further, triplet excitation energy can be converted into light emission.

An exciplex in which two substances form an excited state has a function as a TADF material that converts triplet excitation energy into singlet excitation energy because the difference between the S1 energy level and the T1 energy level is extremely small.

Note that as an index of the T1 level, a phosphorescence spectrum observed at a low temperature (for example, 77K to 10K) may be used. It is preferable that the difference between S1 and T1 of the TADF material is 0.3eV or less, more preferably 0.2eV or less, when the wavelength energy of an extrapolated line obtained by drawing a tangent at a tail on the short wavelength side of the fluorescence spectrum is the S1 level and the wavelength energy of an extrapolated line obtained by drawing a tangent at a tail on the short wavelength side of the phosphorescence spectrum is the T1 level.

When a TADF material is used as the emission center substance, the S1 level and the T1 level of the host material are preferably higher than the S1 level and the T1 level of the TADF material.

As the host material in the light-emitting layer, various carrier transport materials such as a material having an electron transport property, a material having a hole transport property, and the above TADF material can be used.

Examples of the material having a hole-transporting property include: 4, 4 '-bis [ N- (1-naphthyl) -N-phenylamino ] biphenyl (abbreviated to NPB), N' -bis (3-methylphenyl) -N, N '-diphenyl- [1, 1' -biphenyl ] -4, 4 '-diamine (abbreviated to TPD), 4' -bis [ N- (spiro-9, 9 '-bifluoren-2-yl) -N-phenylamino ] biphenyl (abbreviated to BSPB), 4-phenyl-4' - (9-phenylfluoren-9-yl) triphenylamine (abbreviated to BPAFLP), 4-phenyl-3 '- (9-phenylfluoren-9-yl) triphenylamine (abbreviated to mBPAFLP), 4-phenyl-4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated to mBPAFLP) Amine (abbreviated as PCBA1BP), 4' -diphenyl-4 ' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated as PCBBi1BP), 4- (1-naphthyl) -4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated as PCBANB), 4' -di (1-naphthyl) -4' - (9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviated as PCBNBB), 9-dimethyl-N-phenyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] fluorene-2-amine (abbreviated as PCBAF), Compounds having an aromatic amine skeleton such as N-phenyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] -9, 9' -spirobis [ 9H-fluorene ] -2-amine (abbreviated as PCBASF); compounds having a carbazole skeleton such as 1, 3-bis (N-carbazolyl) benzene (abbreviated as mCP), 4 '-bis (N-carbazolyl) biphenyl (abbreviated as CBP), 3, 6-bis (3, 5-diphenylphenyl) -9-phenylcarbazole (abbreviated as CzTP), 3' -bis (9-phenyl-9H-carbazole) (abbreviated as PCCP); compounds having a thiophene skeleton such as 4, 4', 4 "- (benzene-1, 3, 5-triyl) tris (dibenzothiophene) (abbreviated as DBT3P-II), 2, 8-diphenyl-4- [4- (9-phenyl-9H-fluoren-9-yl) phenyl ] dibenzothiophene (abbreviated as DBTFLP-III), 4- [4- (9-phenyl-9H-fluoren-9-yl) phenyl ] -6-phenyldibenzothiophene (abbreviated as DBTFLP-IV); and compounds having a furan skeleton such as 4, 4' - (benzene-1, 3, 5-triyl) tris (dibenzofuran) (abbreviated as DBF3P-II) and 4- {3- [3- (9-phenyl-9H-fluoren-9-yl) phenyl ] phenyl } dibenzofuran (abbreviated as mmDBFFLBi-II). Among the above materials, a compound having an aromatic amine skeleton and a compound having a carbazole skeleton are preferable because they have good reliability and high hole-transporting property and contribute to reduction of driving voltage. In addition, the organic compounds exemplified as the second organic compound can also be used.

Examples of the material having an electron-transporting property include: bis (10-hydroxybenzo [ h ]]Quinoline) beryllium (II) (abbreviation: BeBq₂) Bis (2-methyl-8-quinolinol) (4-phenylphenol) aluminum (III) (abbreviation: BAlq), bis (8-hydroxyquinoline) zinc (II) (abbreviation: znq), bis [2- (2-benzoxazolyl) phenol]Zinc (II) (ZnPBO for short), bis [2- (2-benzothiazolyl) phenol]Metal complexes such as zinc (II) (ZnBTZ for short); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1, 3, 4-oxadiazole (abbreviated as PBD), 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylphenyl) -1, 2, 4-triazole (abbreviated as TAZ), 1, 3-bis [5- (p-tert-butylphenyl) -1, 3, 4-oxadiazol-2-yl]Benzene (abbreviated as OXD-7), 9- [4- (5-phenyl-1, 3, 4-oxadiazole-2-yl) phenyl]-9H-carbazole (abbreviation: CO11), 2' - (1, 3, 5-benzenetriyl) tris (1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2- [3- (dibenzothiophen-4-yl) phenyl]Heterocyclic compounds having a polyazole skeleton such as-1-phenyl-1H-benzimidazole (abbreviated as mDBTBIm-II); 2- [3- (dibenzothiophen-4-yl) phenyl]Dibenzo [ f, h ]]Quinoxaline (abbreviation: 2mDBTPDBq-II), 2- [3' - (dibenzothiophen-4-yl) biphenyl-3-yl]Dibenzo [ f, h ]]Quinoxaline (abbreviation: 2mDBTBPDBq-II), 2- [3' - (9H-carbazol-9-yl) biphenyl-3-yl]Dibenzo [ f, h ]]Quinoxaline (abbreviation: 2mCZBPDBq), 4, 6-bis [3- (phenanthrene-9-yl) phenyl]Pyrimidine (abbreviation: 4, 6mPnP2Pm), 4, 6-bis [3- (4-dibenzothienyl) phenyl]Heterocyclic compounds having a diazine skeleton such as pyrimidine (4, 6mDBTP2 Pm-II); and 3, 5-bis [3- (9H-carbazol-9-yl) phenyl]Pyridine (35 DCzPPy for short), 1, 3, 5-tri [3- (3-pyridyl) -phenyl]And heterocyclic compounds having a pyridine skeleton such as benzene (abbreviated as TmPyPB). Among the above materials, a heterocyclic compound having a diazine skeleton and a heterocyclic compound having a pyridine skeleton are preferable because they have good reliability. In particular, a heterocyclic compound having a diazine (pyrimidine or pyrazine) skeleton has a high electron-transporting property and also contributes to a reduction in driving voltage.

As the TADF material that can be used as the main body material, the same materials as described above can be used. When the TADF material is used as a host material, triplet excitation energy generated in the TADF material is converted into singlet excitation energy by intersystem crossing and transferred to the luminescence center substance, whereby the light-emitting efficiency of the light-emitting device can be improved. At this time, the TADF material is used as an energy donor, and the luminescence center substance is used as an energy acceptor.

This is very effective when the above-mentioned luminescence center substance is a fluorescent substance. In this case, in order to obtain high luminous efficiency, the TADF material preferably has a higher S1 level than the fluorescent luminescent material has a higher S1 level. Further, the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent substance. Therefore, the T1 level of the TADF material is preferably higher than the T1 level of the fluorescent substance.

Further, a TADF material that exhibits luminescence overlapping with the wavelength of the absorption band on the lowest energy side of the fluorescent substance is preferably used. This is preferable because excitation energy is smoothly transferred from the TADF material to the fluorescent substance, and light emission can be efficiently obtained.

In order to efficiently generate singlet excitation energy from triplet excitation energy by intersystem crossing, it is preferable to generate carrier recombination in the TADF material. Further, it is preferable that the triplet excitation energy generated in the TADF material is not transferred to the fluorescent substance. Therefore, the fluorescent substance preferably has a protective group around a light emitter (skeleton that causes light emission) included in the fluorescent substance. As the protective group, a substituent having no pi bond and a saturated hydrocarbon are preferably used. Specifically, an alkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, and a trialkylsilyl group having 3 to 10 carbon atoms are mentioned. More preferably, the fluorescent substance has a plurality of protecting groups. The substituent having no pi bond has almost no function of transporting carriers, and therefore has almost no influence on carrier transport or carrier recombination, and can separate the TADF material and the light-emitting body of the fluorescent substance from each other. Here, the light-emitting substance refers to an atomic group (skeleton) that causes light emission in the fluorescent substance. The light-emitting body preferably has a pi bond skeleton, more preferably contains an aromatic ring, and further preferably has a fused aromatic ring or a fused heteroaromatic ring. Examples of the fused aromatic ring or fused heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, and the like. In particular, a compound having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton,The fluorescent substance having any of a skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphtho-dibenzofuran skeleton has a high fluorescence quantum yield and is therefore preferable.

When a fluorescent substance is used as a luminescence center substance, a material having an anthracene skeleton is preferably used as a host material. By using a substance having an anthracene skeleton as a host material of a fluorescent substance, a light-emitting layer having excellent light-emitting efficiency and durability can be realized. Among the substances having an anthracene skeleton used as a host material, a substance having a diphenylanthracene skeleton, particularly a 9, 10-diphenylanthracene skeleton, is chemically stable, and is therefore preferable. Further, in the case where the host material has a carbazole skeleton, the hole injection property and the hole transport property are improved, and therefore, it is preferable that the host material contains a benzocarbazole skeleton in which a benzene ring is further condensed to the carbazole skeleton, since the HOMO level is shallower by about 0.1eV than the HOMO level of the carbazole, and holes are easily injected into the host material. In particular, since the HOMO level is shallower by about 0.1eV than the HOMO level of carbazole, not only hole injection is facilitated, but also hole transport properties and heat resistance are improved, and therefore, the host material preferably has a dibenzocarbazole skeleton. Therefore, a substance having a 9, 10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton) is more preferably used as the host material. Note that, from the viewpoint of the above-described hole injecting/transporting property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton. Examples of such a substance include 9-phenyl-3- [4- (10-phenyl-9-anthryl) phenyl ] -9H-carbazole (abbreviated as PCzPA), 3- [4- (1-naphthyl) -phenyl ] -9-phenyl-9H-carbazole (abbreviated as PCPN), 9- [4- (10-phenylanthracen-9-yl) phenyl ] -9H-carbazole (abbreviated as CzPA), 7- [4- (10-phenyl-9-anthryl) phenyl ] -7H-dibenzo [ c, g ] carbazole (abbreviated as cgDBCzPA), 6- [3- (9, 10-diphenyl-2-anthryl) phenyl ] -benzo [ b ] naphtho [1, 2-d ] furan (abbreviated as 2mBnfPPA), 9-phenyl-10- {4- (9-phenyl-9H-fluoren-9-yl) -biphenyl-4' -yl } -anthracene (abbreviated as FLPPA), 9- (1-naphthyl) -10- [4- (2-naphthyl) phenyl ] anthracene (abbreviated as. alpha.N-. beta.NPAnth), and the like. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferable because they exhibit very good characteristics.

The host material may be a mixture of a plurality of substances, and when a mixed host material is used, it is preferable to mix a material having an electron-transporting property and a material having a hole-transporting property. By mixing a material having an electron-transporting property and a material having a hole-transporting property, the transport property of the light-emitting layer 113 can be adjusted more easily, and the recombination region can be controlled more easily. The content ratio by weight of the material having a hole-transporting property to the material having an electron-transporting property may be 1:19 to 19: 1.

Note that as part of the mixed material, a phosphorescent substance can be used. The phosphorescent substance may be used as an energy donor for supplying excitation energy to the fluorescent substance when the fluorescent substance is used as a luminescence center substance.

In addition, an exciplex can be formed using a mixture of these materials. When the mixed material is selected so as to form an exciplex that emits light whose wavelength overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting material, energy transfer can be made smooth, and light emission can be obtained efficiently. In addition, this structure is preferable because the driving voltage can be reduced.

Note that at least one of the materials forming the exciplex may be a phosphorescent substance. This enables efficient conversion of triplet excitation energy into singlet excitation energy through intersystem crossing.

In order to efficiently form an exciplex, it is preferable to use a combination of a material having an electron-transporting property and a material having a hole-transporting property in which the HOMO level of the material having a hole-transporting property is equal to or higher than the HOMO level of the material having an electron-transporting property. The LUMO level of the material having a hole-transporting property is preferably equal to or higher than the LUMO level of the material having an electron-transporting property. Note that the LUMO level and the HOMO level of a material can be obtained from the electrochemical characteristics (reduction potential and oxidation potential) of the material measured by Cyclic Voltammetry (CV) measurement.

Note that the formation of the exciplex can be confirmed, for example, by the following method: the formation of the exciplex is described when the emission spectrum of the mixed film shifts to the longer wavelength side than the emission spectrum of each material (or has a new peak at the longer wavelength side) by comparing the emission spectrum of the material having a hole-transporting property, the emission spectrum of the material having an electron-transporting property, and the emission spectrum of the mixed film formed by mixing these materials. Alternatively, when transient Photoluminescence (PL) of a material having a hole-transporting property, transient PL of a material having an electron-transporting property, and transient PL of a mixed film formed by mixing these materials are compared, the formation of an exciplex is indicated when transient responses are different, such as the transient PL lifetime of the mixed film having a long-life component or a larger ratio of retardation components than the transient PL lifetime of each material. Further, the above transient PL may be referred to as transient Electroluminescence (EL). In other words, the formation of the exciplex can be confirmed by observing the difference in transient response as compared with the transient EL of a material having a hole-transporting property, the transient EL of a material having an electron-transporting property, and the transient EL of a mixed film of these materials.

The electron transport layer 114 is provided in contact with the light emitting layer 113. In addition, the electron transport layer 114 includes a seventh organic compound having an electron transport property and a HOMO level of-6.0 eV or more. The seventh organic compound is an organic compound having an electron-transporting property, and preferably includes an anthracene skeleton. In addition, the electron transporting layer 114 may further contain an eighth organic compound which is an organic complex of an alkali metal or an alkaline earth metal. That is, the electron transport layer 114 may be formed of only the seventh organic compound, or may be formed of a mixed material containing the seventh organic compound and another substance, such as a mixed material of the seventh organic compound and the eighth organic compound.

Further, it is more preferable that the seventh organic compound contains an anthracene skeleton and a heterocyclic skeleton, and a nitrogen-containing five-membered ring skeleton is preferably used as the heterocyclic skeleton. The seventh organic compound preferably contains a nitrogen-containing five-membered ring skeleton containing two hetero atoms in the ring such as a pyrazole ring, an imidazole ring, an oxazole ring, and a thiazole ring.

As another organic compound having an electron-transporting property which can be used as the seventh organic compound, an organic compound having an electron-transporting property which can be used for the above host material or an organic compound which can be used for the above host material of the fluorescent substance can be used.

As the organic complex of an alkali metal or an alkaline earth metal, an organic complex of lithium is preferably used, and lithium 8-quinolinolato (abbreviated as Liq) is particularly preferred.

In addition, it is preferable that the material contained in the electron transport layer 114 is in an electric field strength [ V/cm ]]Has an electron mobility of 1X 10 at a square root of 600^-7cm²5 × 10 at a rate of more than Vs^-5cm²Vs or less.

In addition, it is preferable that the electron mobility of the material contained in the electron transport layer 114 when the square root of the electric field strength [ V/cm ] is 600 is lower than the electron mobility of the sixth organic compound or the material contained in the light emitting layer 113 when the square root of the electric field strength [ V/cm ] is 600. The injection amount of electrons into the light-emitting layer can be controlled by reducing the electron transport property in the electron transport layer, and thereby the light-emitting layer can be prevented from being in an electron-rich state.

When the light emitting layer becomes a state where electrons are excessive, as shown in fig. 3A, the light emitting region 120 is defined in a part region and a burden on the part becomes large, resulting in acceleration of deterioration. Further, the failure of electrons to recombine and pass through the light-emitting layer also leads to a reduction in lifetime and light-emitting efficiency. In one embodiment of the present invention, by reducing the electron transportability in the electron transport layer 114, as shown in fig. 3B, the light emitting region 120 can be widened to disperse the burden on the material constituting the light emitting layer 113. Thus, a light-emitting device having a long lifetime and excellent light-emitting efficiency can be provided.

In addition, in the light emitting device having the above structure, a shape having a maximum value is sometimes shown in a degradation curve obtained by a drive test under a condition that a current density is constant. That is, the degradation curve of the light-emitting device used in the light-emitting apparatus according to the embodiment of the present invention may have a shape having a luminance increasing portion with time. The light-emitting device exhibiting such a deterioration behavior can be made to counteract a rapid deterioration (so-called initial deterioration) in the initial stage of driving by the luminance increase. Thereby, a light emitting device with small initial deterioration and a very long drive life can be realized.

Note that when such a differential of the degradation curve having a maximum value is taken, there is a portion where the value is 0. In other words, the light emitting device used for the light emitting apparatus of one embodiment of the present invention in which there is a portion where the differential of the degradation curve is 0 may be a light emitting device in which initial degradation is small and the lifetime is very long.

As shown in fig. 4A, this phenomenon is considered to occur when recombination that is not useful for light emission occurs in the non-light-emission recombination region 121. In the light-emitting device of the present invention having the above-described structure, the light-emitting region 120 (i.e., recombination region) is formed on the electron transport layer 114 side because the injection barrier for holes is small and the electron transport property of the electron transport layer 114 is low in the initial stage of driving. In addition, since the HOMO level of the seventh organic compound in the electron transport layer 114 is higher than-6.0 eV, part of the holes reach the electron transport layer 114 and recombination occurs in the electron transport layer 114, thereby forming the non-light-emitting recombination region 121. Note that this phenomenon may also occur when the difference between the HOMO levels of the sixth organic compound and the seventh organic compound is within 0.2 eV.

Here, as the driving time elapses, the balance of carriers changes, and the light-emitting region 120 (recombination region) gradually moves toward the hole transport layer 112 as shown in fig. 4B. Since the non-light-emitting recombination region 121 is reduced, the energy of the recombined carriers can be effectively used for light emission, and the luminance is increased compared to the initial driving period. This increase in luminance is offset by a sharp decrease in luminance (so-called initial degradation) occurring at the initial stage of driving of the light-emitting device. Thus, the light emitting device is small in initial deterioration and can have a long drive life. In this specification and the like, the light-emitting device is sometimes referred to as a combination-Site labeling emission structure (reststi structure).

In addition, when initial deterioration can be suppressed, the burn-in problem, which is one of the great disadvantages of the organic EL device, and the time and labor required for the aging process performed before shipment to reduce the burn-in problem can be significantly reduced.

In addition, when a region in which the mixing ratio of the electron transporting organic compound and the electron donating substance is changed is formed inside the electron transporting layer, the luminance increase is particularly remarkable. That is, the electron transport layer 114 is formed such that the electron donating substance concentration thereof increases from the second electrode side to the first electrode. Examples of the above structure include: a structure having a concentration gradient; a laminated structure of a plurality of layers having different mixing ratios of the electron transporting organic compound and the electron donating substance.

Fig. 22A to 22D show the electron donating substance concentration in the electron transporting layer 114. Fig. 22A and 22B are schematic diagrams showing continuous changes in the concentration of the electron donating substance, and fig. 22C and 22D are schematic diagrams showing stepwise changes in the concentration of the electron donating substance. In fig. 22A and 22B, the electron transport layer 114 is a single layer having a concentration gradient. In fig. 22C, the electron transport layer 114 has a double-layered structure and the two layers have concentration gradients, respectively. In fig. 22D, the electron transport layer 114 has a three-layer structure and the three layers have concentration gradients, respectively.

As shown in fig. 22A to 22D, it is preferable that the electron-donating substance on the anode side (i.e., on the light-emitting layer 113 side) of the electron transport layer 114 has a high concentration because initial degradation can be suppressed. However, the light-emitting device according to the embodiment of the present invention is not limited to this, and the electron donating substance concentration on the anode side, that is, on the light-emitting layer 113 side may be low.

The light-emitting device used in the light-emitting apparatus according to the embodiment of the present invention having the above-described structure may be a long-life light-emitting device.

Next, examples of other structures and materials in the light-emitting device will be described. The light-emitting device used for the light-emitting apparatus of one embodiment of the present invention as described above includes the EL layer 103 having a plurality of layers between a pair of electrodes (the first electrode 101 and the second electrode 102). The EL layer 103 includes a hole injection layer 111, a first hole transport layer 112-1, a second hole transport layer 112-2, a light-emitting layer 113, and an electron transport layer 114 from the first electrode 101 side.

The EL layer 103 is not particularly limited, and various layers such as a hole injection layer, a hole transport layer, an electron injection layer, a carrier blocking layer, an exciton blocking layer, and a charge generation layer can be used.

The first electrode 101 is preferably formed using any of a metal, an alloy, a conductive compound, a mixture thereof, and the like having a large work function (specifically, 4.0eV or more). Specifically, examples thereof include Indium Tin Oxide (ITO), Indium Tin Oxide containing silicon or silicon Oxide, Indium zinc Oxide, and Indium Oxide containing tungsten Oxide and zinc Oxide (IWZO). Although these conductive metal oxide films are generally formed by a sputtering method, they may be formed by applying a sol-gel method or the like. As an example of the formation method, a method of depositing indium oxide-zinc oxide by a sputtering method using a target to which zinc oxide is added in an amount of 1 wt% to 20 wt% to indium oxide, and the like can be given. In addition, indium oxide (IWZO) including tungsten oxide and zinc oxide may be formed by a sputtering method using a target to which 0.5 wt% to 5 wt% of tungsten oxide and 0.1 wt% to 1 wt% of zinc oxide are added to indium oxide. Further, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or a nitride of a metal material (e.g., titanium nitride), and the like can be given. Further, graphene may also be used. Note that although a substance which is a material typically used for forming an anode is mentioned here, in one embodiment of the present invention, a composite material including an organic compound having a hole-transporting property and a substance which exhibits an electron-accepting property with respect to the organic compound is used as the hole-injecting layer 111, and therefore, there is no need to consider a work function in selecting an electrode material.

As a stacked structure of the EL layer 103, two structures are explained as follows: as shown in fig. 2A, a structure including a hole injection layer 111, a first hole transport layer 112-1, a second hole transport layer 112-2, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 is employed; as shown in fig. 2B, a structure including a hole injection layer 111, a first hole transport layer 112-1, a second hole transport layer 112-2, a light-emitting layer 113, an electron transport layer 114, and a charge generation layer 116 is employed. The materials constituting the respective layers are specifically shown below.

The hole injection layer 111, the hole transport layer 112 (the first hole transport layer 112-1, the second hole transport layer 112-2), the light-emitting layer 113, and the electron transport layer 114 are described above, and therefore, redundant description is omitted. Refer to the previous description.

Lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF) may be disposed between the electron transport layer 114 and the second electrode 102₂) And the like, an alkali metal, an alkaline earth metal, or a compound thereof, as the electron injection layer 115. For example, a layer made of a substance having an electron-transporting property or containing an alkali metal, an alkaline earth metal, or a compound thereof, or an electron compound (electron) can be used as the electron injection layer 115. Examples of the electron compound include a compound in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration.

In addition, a charge generation layer 116 may be provided between the electron transport layer 114 and the second electrode 102 instead of the electron injection layer 115 (fig. 2B). The charge generation layer 116 is a layer which can inject holes into a layer in contact with the cathode side of the charge generation layer 116 and can inject electrons into a layer in contact with the anode side of the layer when a potential is applied. The charge generation layer 116 includes at least a P-type layer 117. The P-type layer 117 is preferably formed using any of the composite materials used for the above-described constitution of the hole injection layer 111. In addition, the P-type layer 117 may be formed by laminating a film containing the above-described acceptor material as a material contained in the composite material and a film containing a hole-transporting material. When a potential is applied to the P-type layer 117, electrons are injected into the electron transport layer 114 and holes are injected into the second electrode 102 serving as a cathode, so that the light emitting device operates.

In addition, the charge generation layer 116 preferably includes an electron relay layer 118 and/or an electron injection buffer layer 119 in addition to the P-type layer 117.

The electron relay layer 118 contains at least a substance having an electron-transporting property, has a function of preventing interaction between the electron injection buffer layer 119 and the P-type layer 117, and smoothly transfers electrons. The LUMO level of the substance having an electron-transporting property included in the electron relay layer 118 is preferably set between the LUMO level of the electron-accepting substance in the P-type layer 117 and the LUMO level of the substance included in the layer in contact with the charge generation layer 116 in the electron transport layer 114. Specifically, the LUMO level of the substance having an electron-transporting property in the electron relay layer 118 is preferably-5.0 eV or more, and more preferably-5.0 eV or more and-3.0 eV or less. In addition, as the substance having an electron-transporting property in the electron relay layer 118, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

The electron injection buffer layer 119 may be made of a material having a high electron injection property. For example, an alkali metal, an alkaline earth metal, a rare earth metal, and a compound of these (an alkali metal compound (including an oxide such as lithium oxide, a carbonate such as a halide, lithium carbonate, or cesium carbonate), an alkaline earth metal compound (including an oxide, a halide, or a carbonate), or a compound of a rare earth metal (including an oxide, a halide, or a carbonate)) can be used.

In the case where the electron injection buffer layer 119 contains a substance having an electron-transporting property and an electron-donating substance, the electron-donating substance may be an organic compound such as an alkali metal, an alkaline earth metal, a rare earth metal, or a compound thereof (an alkali metal compound (including an oxide such as lithium oxide, a carbonate such as a halide, lithium carbonate, or cesium carbonate), an alkaline earth metal compound (including an oxide, a halide, or a carbonate), or a compound of a rare earth metal (including an oxide, a halide, or a carbonate)), or tetrathianaphthacene (abbreviated as TTN), nickelocene, or decamethylnickelocene. The substance having an electron-transporting property can be formed using the same material as that used for the electron-transporting layer 114 described above.

As a substance forming the second electrode 102, a metal, an alloy, a conductive compound, a mixture thereof, or the like having a small work function (specifically, 3.8eV or less) can be used. Specific examples of such a cathode material include elements belonging to group 1 or group 2 of the periodic table, such as alkali metals (lithium (Li), cesium (Cs), and the like), magnesium (Mg), calcium (Ca), strontium (Sr), and the like, rare earth metals including these elements (MgAg, AlLi), europium (Eu), ytterbium (Yb), and the like, and alloys including these rare earth metals. However, by providing an electron injection layer between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used as the second electrode 102 regardless of the magnitude of the work function.

The film of these conductive materials can be formed by a dry method such as a vacuum evaporation method or a sputtering method, an ink jet method, a spin coating method, or the like. In addition, a wet method using a sol-gel method or the like or a wet method using a paste of a metal material may be used.

As a method for forming the EL layer 103, various methods can be used, regardless of a dry method or a wet method. For example, a vacuum vapor deposition method, a gravure printing method, a screen printing method, an ink jet method, a spin coating method, or the like may be used.

In addition, the electrodes or layers described above may also be formed by using different methods.

Note that the structure of the layer provided between the first electrode 101 and the second electrode 102 is not limited to the above-described structure. It is preferable to provide a light-emitting region where holes and electrons are recombined in a portion away from the first electrode 101 and the second electrode 102 in order to suppress quenching caused by the proximity of the light-emitting region to a metal used for the electrode and the carrier injection layer.

In addition, in order to suppress energy transfer from excitons generated in the light-emitting layer, a carrier transport layer such as a hole transport layer and an electron transport layer which are in contact with the light-emitting layer 113, particularly a carrier transport layer near a recombination region in the light-emitting layer 113 is preferably formed using a substance having a band gap larger than that of a light-emitting material constituting the light-emitting layer or a light-emitting material contained in the light-emitting layer.

Next, a light-emitting device having a structure in which a plurality of light-emitting units are stacked (such a light-emitting device is also referred to as a stacked-type element or a series element) will be described with reference to fig. 2C. The light emitting device has a plurality of light emitting cells between an anode and a cathode. One light-emitting unit has substantially the same structure as the EL layer 103 shown in fig. 2A. In other words, the light emitting device shown in fig. 2A or 2B has one light emitting cell, and the light emitting device shown in fig. 2C has a plurality of light emitting cells.

In fig. 2C, a first light emitting unit 161 and a second light emitting unit 162 are stacked between the first electrode 151 and the second electrode 152, and a charge generation layer 163 is disposed between the first light emitting unit 161 and the second light emitting unit 162. The first electrode 151 and the second electrode 152 correspond to the first electrode 101 and the second electrode 102 in fig. 2A, respectively, and the materials illustrated in fig. 2A may be applied. In addition, the first and second light emitting units 161 and 162 may have the same structure or different structures.

The charge generation layer 163 has a function of injecting electrons into one light emitting cell and injecting holes into the other light emitting cell when a voltage is applied between the first electrode 151 and the second electrode 152. That is, in fig. 2C, when a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the charge generation layer 163 may be a layer that injects electrons into the first light emitting unit 161 and injects holes into the second light emitting unit 162.

The charge generation layer 163 preferably has the same structure as the charge generation layer 116 shown in fig. 2B. Since the composite material of the organic compound and the metal oxide has good carrier injection property and carrier transport property, low voltage driving and low current driving can be realized. Note that in the case where the anode-side surface of the light-emitting unit is in contact with the charge generation layer 163, the charge generation layer 163 may function as a hole injection layer of the light-emitting unit, and therefore the hole injection layer may not be provided in the light-emitting unit.

In addition, when the charge generation layer 163 is provided with the electron injection buffer layer 119, since the electron injection buffer layer 119 has a function of an electron injection layer in the light emitting cell on the anode side, the electron injection layer does not necessarily have to be provided in the light emitting cell on the anode side.

Although the light emitting device having two light emitting cells is illustrated in fig. 2C, one embodiment of the present invention may be equally applied to a light emitting device in which three or more light emitting cells are stacked. As shown in the light-emitting device of fig. 2C, by disposing a plurality of light-emitting cells with the charge generation layer 163 being interposed therebetween, the element can realize high-luminance light emission while maintaining a low current density, and can realize a long lifetime. In addition, a light-emitting device which can be driven at low voltage and has low power consumption can be realized.

Fig. 21 is a schematic view of a light-emitting device according to an embodiment of the present invention when a light-emitting device having a plurality of light-emitting units is used, as in fig. 2C. In fig. 21, a first electrode 151 is formed on a substrate 100, and a first light-emitting unit 161 including a first light-emitting layer 113-1 and a second light-emitting unit 162 including a second light-emitting layer 113-2 are stacked with a charge generation layer 163 interposed therebetween. The light emitted from the light emitting device is emitted directly or through the color conversion layer 205. In addition, color purity can be improved by color filters 225R, 225G, and 225B. Note that although fig. 21 shows a structure in which the color filter 225B is provided, one embodiment of the present invention is not limited thereto. For example, an overcoat layer may be provided in place of the color filter 225B in fig. 21. The outer coating layer is preferably made of an organic resin material, and for example, an acrylic resin or a polyimide resin can be used. Note that in this specification and the like, the color filter layer is sometimes referred to as a colored layer and the overcoat layer is sometimes referred to as a resin layer. Therefore, the color filter 225R may be referred to as a first coloring layer, and the color filter 225G may be referred to as a second coloring layer.

Each of the EL layer 103, the first light-emitting unit 161, the second light-emitting unit 162, the charge generation layer, and the like, and the electrode can be formed by a method such as vapor deposition (including vacuum vapor deposition), droplet discharge (also referred to as an ink jet method), coating, or gravure printing. In addition, each of the layers and the electrodes may contain a low-molecular material, a medium-molecular material (including oligomers and dendrimers), or a high-molecular material.

Here, when looking at color reproducibility of a full-color display, it is important to obtain light with high color purity in order to display a richer color gamut. Since light emission from an organic compound often has a broader spectrum than light emission from an inorganic compound, it is preferable to narrow the spectrum by a microcavity structure in order to obtain light emission having sufficiently high color purity.

In fact, a light emitting device having an appropriate microcavity structure using an appropriate dopant can obtain blue emission in conformity with the bt.2020 standard explained previously. When the microcavity structure of the light-emitting device is configured to enhance blue light, a highly efficient light-emitting device having high color purity can be obtained.

The light emitting device having the microcavity structure includes a reflective electrode and a semi-transmissive/semi-reflective electrode as a pair of electrodes of the light emitting device. The reflective electrode and the semi-transmissive and semi-reflective electrode correspond to the first electrode 101 and the second electrode 102. One of the first electrode 101 and the second electrode 102 is a reflective electrode, and the other is a semi-transmissive and semi-reflective electrode.

In a light-emitting device having a microcavity structure, light emitted in all directions from a light-emitting layer in an EL layer is reflected by a reflective electrode and a semi-transmissive/semi-reflective electrode to resonate, thereby amplifying light of a certain wavelength or converting the light into light having directivity.

The reflective electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%, and a resistivity of 1 × 10^-2Omega cm or less. Examples of the material for forming the reflective electrode include aluminum (Al) and an alloy containing Al. Examples of the alloy containing Al include an alloy containing Al and L (L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)), and an alloy containing Al and Ti, an alloy containing Al, Ni, and La, and the like. Aluminum has low resistivity and high light reflectivity. In addition, since aluminum is contained in a large amount in the earth's crust and is inexpensive, the use of aluminum can reduce the manufacturing cost of a light emitting device containing aluminum. In addition, silver (Ag), an alloy containing Ag, N (N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), and gold (Au), or the like may be used. Examples of the alloy containing silver include the following alloys: comprising a combination of silver, palladium and copperGold; an alloy comprising silver and copper; an alloy comprising silver and magnesium; an alloy comprising silver and nickel; an alloy comprising silver and gold; and alloys containing silver and ytterbium, and the like. In addition to the above materials, transition metals such as tungsten, chromium (Cr), molybdenum (Mo), copper, or titanium can be used.

Further, a transparent electrode layer may be formed of a conductive material having light transmittance between the reflective electrode and the EL layer 103 as an optical path length adjustment layer, and the first electrode 101 may include a reflective electrode and a transparent electrode layer. The optical path length (cavity length) of the microcavity structure can also be adjusted by using the transparent electrode layer. As the conductive material having light transmittance, for example, metal oxides such as Indium tin Oxide (hereinafter referred to as ITO), Indium tin Oxide containing silicon or silicon Oxide (ITSO), Indium Zinc Oxide (Indium Zinc Oxide), Indium tin Oxide containing titanium, Indium titanium Oxide, and Indium Oxide containing tungsten Oxide and Zinc Oxide can be used.

The semi-transmissive and semi-reflective electrode has a reflectance of visible light of 20% to 80%, preferably 40% to 70%, and a resistivity of 1 × 10^-2Omega cm or less. The semi-transmissive and semi-reflective electrode may be formed using one or more of conductive metals, conductive alloys, conductive compounds, and the like. Specifically, for example, metal oxides such as Indium tin Oxide (hereinafter referred to as ITO), Indium tin Oxide containing silicon or silicon Oxide (ITSO), Indium Zinc Oxide (Indium Zinc Oxide), Indium tin Oxide containing titanium, Indium titanium Oxide, and Indium Oxide containing tungsten Oxide and Zinc Oxide can be used. In addition, a metal film having a thickness of a degree of transmitting light (preferably, a thickness of 1nm or more and 30nm or less) may be used. Examples of the metal include Ag, an alloy of Ag and Al, an alloy of Ag and Mg, an alloy of Ag and Au, and an alloy of Ag and Yb.

The reflective electrode may be one of the first electrode 101 and the second electrode 102, and the semi-transmissive and semi-reflective electrode may be the other of the first electrode 101 and the second electrode 102. The reflective electrode may be one of an anode and a cathode, and the semi-transmissive/semi-reflective electrode may be the other of the anode and the cathode.

Note that when the light-emitting device has a top emission structure, light extraction efficiency can be improved by providing an organic cap layer on the face of the second electrode 102 opposite to the face in contact with the EL layer 103. By providing the organic cap layer, the difference in refractive index between the electrode and the air interface can be reduced, and the light extraction efficiency can be improved. The thickness of the organic cap layer is preferably 5nm or more and 120nm or less, and more preferably 30nm or more and 90nm or less. In addition, an organic compound layer including a substance having a molecular weight of 300 or more and 1200 or less may be used as the organic cap layer. Further, the organic cap layer is preferably formed using an organic material having conductivity. The semi-transmissive/semi-reflective electrode needs to be thin in order to maintain a certain thickness of the light transmissive film, but when the thickness of the semi-transmissive/semi-reflective electrode is thin, the conductivity may be lowered. Here, by using a material having conductivity as the organic cap layer, it is possible to improve light extraction efficiency and to secure conductivity, thereby improving the yield of manufacturing the light-emitting device. In addition, an organic compound which absorbs light in the visible light region little is preferably used. The organic capping layer may also use an organic compound that can be used for the EL layer 103. In this case, since the organic cap layer can be formed in a film forming apparatus or a film forming chamber in which the EL layer 103 is formed, the organic cap layer can be easily formed.

In this light-emitting device, the optical path length (cavity length) between the reflective electrode and the semi-transmissive/semi-reflective electrode is changed by changing the thickness of the transparent electrode provided in contact with the reflective electrode, and the thickness of the carrier transport layer such as the hole injection layer and the hole transport layer. This makes it possible to attenuate light of a wavelength not resonating while strengthening light of a wavelength resonating between the reflective electrode and the semi-transmissive/semi-reflective electrode.

In the microcavity structure, when the wavelength to be amplified is λ nm, the optical distance (optical path length) between the interface on the EL layer side of the reflective electrode and the interface on the EL layer side of the semi-transmissive/semi-reflective electrode is preferably an integral multiple of λ/2.

In addition, light (first reflected light) reflected by the reflective electrode during light emission greatly interferes with light (first incident light) directly entering the semi-transmissive and semi-reflective electrode from the light-emitting layer. Therefore, it is preferable to adjust the optical length between the reflective electrode and the light-emitting layer to (2n-1) λ/4(n is a natural number of 1 or more, and λ is the wavelength of light to be amplified). By adjusting the optical path length, the phase of the first reflected light can be made to coincide with that of the first incident light, whereby the light emitted from the light-emitting layer can be further amplified.

By adopting the microcavity structure, the emission intensity in the front direction of a given wavelength can be enhanced, whereby power consumption can be reduced. In addition, the amount of light entering the color conversion layer can be increased.

It is known that light whose spectrum is narrowed by the microcavity structure has strong directivity in the vertical direction of the screen. However, since light passing through the color conversion layer using the QDs emits light emitted from the QDs or the light-emitting organic compound in various directions, the light hardly has directivity. Basically, the color conversion layer causes much loss of the light emitting device, and thus blue light emission of light of the shortest wavelength is directly taken out from the light emitting device in a display using the color conversion layer while green and red light is obtained through the color conversion layer. Therefore, there is a difference in light distribution characteristics between the green pixel and the red pixel and the blue pixel. This large difference in light distribution characteristics causes viewing angle dependence, which directly leads to degradation in display quality. Especially, the influence is larger in the case that many people watch a large screen such as a television.

Therefore, in the light-emitting device according to the embodiment of the present invention, the pixel having no color conversion layer may be configured to have a function of scattering light, or the pixel having the color conversion layer may be configured to have a structure of providing directivity.

The structure having a function of scattering light may be provided on an optical path on which light emitted from the light emitting device is emitted to the outside of the light emitting apparatus. The light emitted from the light-emitting device having the microcavity structure has strong directivity, but when the light is scattered by a structure having a function of scattering the light, the strong directivity can be weakened or the scattered light can be made to have directivity, and therefore, the light passing through the color conversion layer and the light not passing through the color conversion layer can have the same light distribution characteristics. This can reduce the viewing angle dependency.

Fig. 5A to 5C illustrate a structure in which a structure 205B having a function of scattering light emitted by the first light-emitting device 207B is provided in the first pixel 208B. As the structure 205B having a function of scattering light emitted from the first light-emitting device 207B, a layer containing a substance which scatters light emitted from the first light-emitting device as shown in fig. 5A and 5B may be used, or a structure having a structure which scatters light emitted from the light-emitting device as shown in fig. 5C may be used.

Fig. 6A to 6C show a modification example. Fig. 6A shows a case where the layer 215B having a function of a color filter for blue is used instead of the structure 205B having a function of scattering light in fig. 5A. Fig. 6B and 6C both show a structure 205B having a function of scattering light and a blue color filter 225B. As shown in fig. 6B and 6C, the blue color filter 225B may be formed in contact with the structure 205B having a function of scattering light, or may be formed on another structure such as a sealing substrate. This light-emitting device can scatter light having directivity and can further improve color purity. In addition, since reflection of external light can be suppressed, a better display can be obtained.

By causing light from the first light-emitting device 207B to be emitted through the structure 205B, light from the first pixel 208B can be light with small directivity. This alleviates the difference in light distribution characteristics between colors, and thus a light-emitting device with high display quality can be obtained.

In addition, the light-emitting device according to the embodiment of the present invention shown in fig. 7A and 7B is provided with means 210G and means 210R for providing directivity to the light emitted from the first color conversion layer. The means for imparting directivity to the light emitted from the first color conversion layer is not limited. For example, a microcavity structure can be formed by forming a transflective layer with a color conversion layer interposed therebetween. Fig. 7A shows a case where the transflective layer is formed above and below the color conversion layer, and fig. 7B shows a case where the transflective layer on the light emitting device side of the color conversion layer also serves as the second electrode (transflective electrode) of the light emitting device.

By providing the means 210G and 210R for providing directivity to light passing through the color conversion layer as light from the second pixel 208G and light from the third pixel 208R, light with high directivity can be obtained. This alleviates the difference in light distribution characteristics between colors, and enables a light-emitting device with high display quality to be obtained.

(embodiment mode 2)

In this embodiment, a display device including the light-emitting device described in embodiment 1 will be described.

In this embodiment, a display device manufactured using the light-emitting device described in embodiment 1 will be described with reference to fig. 8A and 8B. Note that fig. 8A is a top view showing the display device, and fig. 8B is a sectional view taken along line a-B and line C-D in fig. 8A. The display device includes a driver circuit portion (source line driver circuit) 601, a pixel portion 602, and a driver circuit portion (gate line driver circuit) 603, which are indicated by broken lines, for controlling light emission of the light-emitting device. In addition, reference numeral 604 is a sealing substrate, reference numeral 605 is a sealing material, and reference numeral 607 is a space surrounded by the sealing material 605.

Note that the lead wiring 608 is a wiring for transmitting signals input to the source line driver circuit 601 and the gate line driver circuit 603, and receives a video signal, a clock signal, a start signal, a reset signal, and the like from a Flexible Printed Circuit (FPC)609 serving as an external input terminal. Note that although only the FPC is illustrated here, the FPC may be mounted with a Printed Wiring Board (PWB). The light-emitting device in this specification includes, in its category, not only a light-emitting device main body but also a light-emitting device on which an FPC or a PWB is mounted.

Next, a cross-sectional structure is explained with reference to fig. 8B. A driver circuit portion and a pixel portion are formed over an element substrate 610. Here, one pixel in the source line driver circuit 601 and the pixel portion 602 is shown as a driver circuit portion.

The element substrate 610 may be a substrate made of glass, quartz, an organic resin, a metal, an alloy, a semiconductor, or the like, or a plastic substrate made of Fiber Reinforced Plastic (FRP), polyvinyl fluoride (PVF), polyester, acrylic, or the like.

There is no particular limitation on the structure of the transistor used in the pixel or the driver circuit. For example, an inverted staggered transistor may be used, or a staggered transistor may be used. In addition, either a top gate type transistor or a bottom gate type transistor may be used. The semiconductor material used for the transistor is not particularly limited, and for example, silicon, germanium, silicon carbide, gallium nitride, or the like can be used. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc such as an In-Ga-Zn metal oxide can be used.

The crystallinity of a semiconductor material used for a transistor is also not particularly limited, and an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor in which a part thereof has a crystalline region) can be used. When a semiconductor having crystallinity is used, deterioration in characteristics of the transistor can be suppressed, and therefore, the semiconductor is preferable.

Here, the oxide semiconductor is preferably used for a semiconductor device such as a transistor provided in the pixel and the driver circuit and a transistor used in a touch sensor or the like described later. It is particularly preferable to use an oxide semiconductor whose band gap is wider than that of silicon. By using an oxide semiconductor having a wider band gap than silicon, off-state current of the transistor can be reduced.

The oxide semiconductor preferably contains at least indium (In) or zinc (Zn). The oxide semiconductor more preferably contains an oxide represented by an In-M-Zn based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

Here, an oxide semiconductor which can be used in one embodiment of the present invention will be described below.

Oxide semiconductors (metal oxides) are classified into single crystal oxide semiconductors and non-single crystal oxide semiconductors. Examples of the non-single crystal oxide semiconductor include a c-axis oriented crystal oxide semiconductor (CAAC-OS), a polycrystalline oxide semiconductor, a nanocrystalline oxide semiconductor (nc-OS), an amorphous oxide semiconductor (a-like OS), and the like.

CAAC-OS has c-axis orientation, and a plurality of nanocrystals are connected in the a-b plane direction, and the crystal structure is distorted. The distortion is a portion in which the direction of lattice alignment changes between a region in which lattice alignments coincide and a region in which other lattice alignments coincide among regions in which a plurality of nanocrystals are connected.

The shape of the nanocrystals is substantially hexagonal, but is not limited to regular hexagonal shapes, and sometimes non-regular hexagonal shapes. In addition, the nanocrystals may have a lattice arrangement such as a pentagonal or heptagonal shape in distortion. In the CAAC-OS, it is difficult to observe a clear grain boundary even in the vicinity of the distortion. That is, it is found that the formation of grain boundaries can be suppressed due to the distortion of the lattice arrangement. This is because CAAC-OS can contain distortion due to low density of oxygen atom arrangement in the a-b plane direction, or due to change in bonding distance between atoms caused by substitution of metal elements.

CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) In which a layer containing indium and oxygen (hereinafter referred to as an In layer) and a layer containing the elements M, zinc, and oxygen (hereinafter referred to as an (M, Zn) layer) are stacked. In addition, indium and the element M may be substituted for each other, and In the case where the element M In the (M, Zn) layer is substituted with indium, the layer may be represented as an (In, M, Zn) layer. In addition, In the case where indium In the In layer is replaced with the element M, the layer may be represented as an (In, M) layer.

CAAC-OS is an oxide semiconductor with high crystallinity. On the other hand, in CAAC-OS, it is not easy to observe a clear grain boundary, and therefore, a decrease in electron mobility due to the grain boundary does not easily occur. In addition, the crystallinity of the oxide semiconductor may be reduced by the entry of impurities, the generation of defects, or the like. Therefore, CAAC-OS can be said to be an impurity or defect (oxygen vacancy (also referred to as V)_O(oxygen vacancy)), and the like). Therefore, the oxide semiconductor having the CAAC-OS has stable physical properties. Therefore, an oxide semiconductor including CAAC-OS has high heat resistance and high reliability.

In nc-OS, the atomic arrangement in a minute region (for example, a region of 1nm to 10nm, particularly 1nm to 3 nm) has periodicity. In addition, in nc-OS, there is no regularity of crystal orientation between different nanocrystals. Therefore, orientation was not observed in the entire film. Therefore, sometimes nc-OS does not differ from a-like OS or amorphous oxide semiconductor in some analytical methods.

In addition, indium-gallium-zinc oxide (hereinafter, IGZO), which is one of oxide semiconductors including indium, gallium, and zinc, may have a stable structure when composed of the above-described nanocrystal. In particular, IGZO tends to be less likely to undergo crystal growth in the atmosphere, and therefore, it is sometimes structurally stable when formed of a small crystal (for example, the nanocrystal) than when formed of a large crystal (here, a crystal of several mm or a crystal of several cm).

The a-like OS is an oxide semiconductor having a structure between nc-OS and an amorphous oxide semiconductor. The a-like OS contains holes or low density regions. That is, the crystallinity of a-like OS is lower than that of nc-OS and CAAC-OS.

Oxide semiconductors have various structures and various characteristics. The oxide semiconductor according to one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, nc-OS, and CAAC-OS.

In addition, Cloud-Aligned Composite OS (CAC-OS) may be used in addition to the above-described oxide semiconductor.

The CAC-OS has a function of conductivity in a part of the material, a function of insulation in another part of the material, and a function of a semiconductor as a whole of the material. When CAC-OS is used for an active layer of a transistor, the function of conductivity is to allow electrons (or holes) used as carriers to flow therethrough, and the function of insulation is to prevent electrons used as carriers from flowing therethrough. The CAC-OS can be provided with a switching function (on/off function) by the complementary action of the conductive function and the insulating function. By separating each function in the CAC-OS, each function can be improved to the maximum.

The CAC-OS has a conductive region and an insulating region. The conductive region has the above-described function of conductivity, and the insulating region has the above-described function of insulation. In addition, in the material, the conductive region and the insulating region are sometimes separated at a nanoparticle level. In addition, the conductive region and the insulating region may be unevenly distributed in the material. In addition, a conductive region having a blurred edge and connected in a cloud shape may be observed.

In CAC-OS, the conductive region and the insulating region may be dispersed in the material in a size of 0.5nm to 10nm, preferably 0.5nm to 3 nm.

Furthermore, the CAC-OS contains components with different band gaps. For example, the CAC-OS includes a component having a wide gap due to the insulating region and a component having a narrow gap due to the conductive region. In this structure, when the carriers are made to flow through, the carriers mainly flow through the component having the narrow gap. Further, the component having a narrow gap and the component having a wide gap act complementarily, and carriers flow through the component having a wide gap in conjunction with the component having a narrow gap. Therefore, when the CAC-OS or CAC metal oxide is used for a channel formation region of a transistor, a high current driving force, that is, a large on-state current and a high field-effect mobility can be obtained in an on state of the transistor.

That is, CAC-OS may also be referred to as a matrix composite or a metal matrix composite.

By using the oxide semiconductor material for the semiconductor layer, a highly reliable transistor in which variation in electrical characteristics is suppressed can be realized.

In addition, since the off-state current of the transistor is low, the charge stored in the capacitor through the transistor having the semiconductor layer can be held for a long period of time. When such a transistor is used for a pixel, the operation of the driving circuit can be stopped while the gradation of an image displayed in each display region is maintained. As a result, an electronic apparatus with extremely low power consumption can be realized.

In order to stabilize the characteristics of a transistor or the like, a base film is preferably provided. The base film can be formed using an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film in a single layer or stacked layers. The base film can be formed by a sputtering method, a Chemical Vapor Deposition (CVD) method (a plasma CVD method, a thermal CVD method, metal organic CVD (mocvd), or the like), an Atomic Layer Deposition (ALD) method, a coating method, a printing method, or the like. Note that the base film may not be provided if it is not necessary.

Note that the FET623 is illustrated as one of transistors formed in the source line driver circuit 601. The driver circuit may be formed using various CMOS circuits, PMOS circuits, or NMOS circuits. Although this embodiment shows a driver-integrated type in which a driver circuit is formed over a substrate, the driver circuit is not necessarily formed over the substrate, and the driver circuit may be formed outside the substrate.

In addition, the pixel portion 602 is formed of a plurality of pixels each including a switching FET611, a current controlling FET612, and an anode 613 electrically connected to a drain of the current controlling FET 612. One embodiment of the present invention is not limited thereto. The pixel portion 602 may include three or more FET and capacitor combinations.

Note that the insulator 614 is formed so as to cover an end portion of the anode 613. Here, the insulator 614 may be formed using a positive photosensitive acrylic resin.

In addition, the upper end portion or the lower end portion of the insulator 614 is formed into a curved surface having a curvature to obtain good coverage of an EL layer or the like formed later. For example, in the case of using a positive photosensitive acrylic resin as a material of the insulator 614, it is preferable that only the upper end portion of the insulator 614 includes a curved surface having a radius of curvature (0.2 μm to 3 μm). As the insulator 614, a negative photosensitive resin or a positive photosensitive resin can be used.

An EL layer 616 and a cathode 617 are formed over the anode 613. Here, a material having a high work function is preferably used as a material for the anode 613. For example, in addition to a single-layer film such as an ITO film, an indium tin oxide film containing silicon, an indium oxide film containing zinc oxide in an amount of 2 to 20 wt%, a titanium nitride film, a chromium film, a tungsten film, a Zn film, a Pt film, or the like, a stacked-layer film of a titanium nitride film and a film containing aluminum as a main component, a three-layer stacked-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film, or the like can be used. Note that if a stacked-layer structure is employed here, since the resistance value of the wiring is low, a good ohmic contact can be obtained, and in addition, it can be used as an anode.

The EL layer 616 is formed by various methods such as a vapor deposition method using a vapor deposition mask, an ink jet method, and a spin coating method. The EL layer 616 includes the structure shown in fig. 2A to 2C. As another material included in the EL layer 616, a low-molecular compound or a high-molecular compound (including an oligomer or a dendrimer) may be used.

As a material for the cathode 617 formed over the EL layer 616, a material having a small work function (Al, Mg, Li, Ca, an alloy or a compound thereof (MgAg, MgIn, AlLi, or the like)) is preferably used. Note that when light generated in the EL layer 616 is transmitted through the cathode 617, a stack of a thin metal film having a reduced thickness and a transparent conductive film (ITO, indium oxide containing 2 wt% to 20 wt% of zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), or the like) is preferably used for the cathode 617.

The light-emitting device is formed of an anode 613, an EL layer 616, and a cathode 617. The light-emitting device is the light-emitting device shown in embodiment mode 1. The pixel portion includes a plurality of light-emitting devices, and the light-emitting device of this embodiment may include both the light-emitting device described in embodiment 1 and a light-emitting device having another structure.

In addition, by attaching the sealing substrate 604 to the element substrate 610 with the sealing material 605, the light-emitting device 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. Note that the space 607 may be filled with a filler, or may be filled with an inert gas (nitrogen, argon, or the like) or a sealing material. By forming a recess in the sealing substrate and providing a drying agent therein, deterioration due to the influence of moisture can be suppressed, and therefore, this is preferable.

In addition, epoxy resin or glass frit is preferably used as the sealing material 605. These materials are preferably materials that are as impermeable as possible to water and oxygen. As a material for the sealing substrate 604, a glass substrate or a quartz substrate, and a plastic substrate made of glass Fiber Reinforced Plastic (FRP), polyvinyl fluoride (PVF), polyester, acrylic resin, or the like can be used.

Although not shown in fig. 8A and 8B, a protective film may be provided on the cathode. The protective film may be formed of an organic resin film or an inorganic insulating film. Further, a protective film may be formed so as to cover the exposed portion of the sealing material 605. The protective film may be provided so as to cover the surfaces and side surfaces of the pair of substrates and the exposed side surfaces of the sealing layer, the insulating layer, and the like.

As the protective film, a material that is not easily permeable to impurities such as water can be used. Therefore, it is possible to effectively suppress diffusion of impurities such as water from the outside to the inside.

As a material constituting the protective film, an oxide, a nitride, a fluoride, a sulfide, a ternary compound, a metal, a polymer, or the like can be used. For example, the material may contain aluminum oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, indium oxide, aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, gallium nitride, a nitride containing titanium and aluminum, an oxide containing aluminum and zinc, a sulfide containing manganese and zinc, a sulfide containing cerium and strontium, an oxide containing erbium and aluminum, an oxide containing yttrium and zirconium, and the like.

The protective film is preferably formed by a film formation method having good step coverage. One such method is the Atomic Layer Deposition (ALD) method. A material that can be formed by the ALD method is preferably used for the protective film. The protective film having a high density, reduced defects such as cracks and pinholes, and a uniform thickness can be formed by the ALD method. In addition, damage to the processing member when the protective film is formed can be reduced.

For example, a protective film having a uniform and small number of defects can be formed on a surface having a complicated uneven shape or on the top surface, side surfaces, and back surface of a touch panel by the ALD method.

As described above, a display device manufactured using the light-emitting device described in embodiment 1 can be obtained.

Since the display device in this embodiment mode uses the light-emitting device described in embodiment mode 1, a display device having excellent characteristics can be formed. Specifically, the light-emitting device described in embodiment 1 is a light-emitting device having a long lifetime, and thus a display device having high reliability can be realized. In addition, a display device using the light-emitting device described in embodiment 1 has good light-emitting efficiency, and thus can realize a display device with low power consumption.

Fig. 9A and 9B each show an example of a light-emitting apparatus which realizes full-color by providing a color conversion layer or the like by forming a light-emitting device exhibiting blue light emission. Fig. 9A illustrates a substrate 1001, a base insulating film 1002, a gate insulating film 1003, gate electrodes 1006, 1007, 1008, a first interlayer insulating film 1020, a second interlayer insulating film 1021, a peripheral portion 1042, a pixel portion 1040, a driver circuit portion 1041, first electrodes 1024R, 1024G, 1024B of a light-emitting device, a partition wall 1025, an EL layer 1028, a second electrode 1029 of a light-emitting device, a sealing substrate 1031, a sealing material 1032, and the like.

In fig. 9A, color conversion layers (a red color conversion layer 1034R and a green color conversion layer 1034G) are provided on the transparent base material 1033. In addition, a black matrix 1035 may be provided. The transparent base material 1033 provided with the color conversion layer and the black matrix is aligned and fixed to the substrate 1001. In addition, the color conversion layer and the black matrix 1035 are covered with the overcoat layer 1036.

Fig. 9B shows an example in which color conversion layers (red color conversion layer 1034R, green color conversion layer 1034G) are formed between the gate insulating film 1003 and the first interlayer insulating film 1020. As described above, the coloring layer may be provided between the substrate 1001 and the sealing substrate 1031.

In addition, although the light-emitting device having the structure (bottom emission structure) in which light is extracted from the side of the substrate 1001 where the FET is formed has been described in the above-described light-emitting device, a light-emitting device having a structure (top emission structure) in which light is extracted from the side of the sealing substrate 1031 may be employed. Fig. 10 is a sectional view showing a top emission structure light emitting device. In this case, a substrate which does not transmit light can be used as the substrate 1001. The steps up to manufacturing the connection electrode for connecting the FET to the anode of the light emitting device are performed in the same manner as the steps of manufacturing the light emitting device having the bottom emission structure. Then, the third interlayer insulating film 1037 is formed so as to cover the electrode 1022. The insulating film may have a function of planarization. The third interlayer insulating film 1037 can be formed using the same material as the second interlayer insulating film or any other known material.

Although the first electrodes 1024R, 1024G, 1024B of the light emitting device are all used as the anode means here, they may be all used as the cathode. In addition, in the case of using a light-emitting device having a top emission structure as shown in fig. 10, the first electrode is preferably a reflective electrode. The EL layer 1028 has an element structure capable of obtaining blue light emission.

In the case of employing the top emission structure shown in fig. 10, sealing may be performed using a sealing substrate 1031 provided with color conversion layers (red color conversion layer 1034R, green color conversion layer 1034G). The sealing substrate 1031 may also be provided with a black matrix 1035 between pixels. The color conversion layers (red color conversion layer 1034R and green color conversion layer 1034G) and the black matrix may be covered with the overcoat layer 1036. As the sealing substrate 1031, a substrate having light-transmitting properties is used. In addition, the color conversion layers (the color conversion layer 1034R of red and the color conversion layer 1034G of green) may be directly provided on the second electrode 1029 (or on the protective film provided on the second electrode 1029).

In the above structure, the EL layer may include a plurality of light-emitting layers, or may include one light-emitting layer. For example, the following structure may be adopted: combining an EL layer with the above tandem type light emitting device, in one light emitting device, a plurality of EL layers are provided with a charge generation layer sandwiched therebetween, each EL layer including one or more light emitting layers.

In the light emitting device having the top emission structure, a microcavity structure may be preferably applied. A light-emitting device having a microcavity structure can be obtained by using the reflective electrode as an anode and the semi-transmissive/semi-reflective electrode as a cathode. The light-emitting device having a microcavity structure includes at least an EL layer between a reflective electrode and a semi-transmissive/semi-reflective electrode, and at least a light-emitting layer serving as a light-emitting region.

Note that the reflective electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%, and a resistivity of 1 × 10^-2A film of not more than Ω cm. The semi-transmissive and semi-reflective electrode has a visible light reflectance of 20 to 80%, preferably 40 to 70%, and a resistivity of 1X 10^-2A film of not more than Ω cm.

Light emitted from the light-emitting layer included in the EL layer is reflected by the reflective electrode and the semi-transmissive/semi-reflective electrode, and resonates.

In this light-emitting device, the optical length between the reflective electrode and the semi-transmissive/semi-reflective electrode can be changed by changing the thickness of the transparent conductive film, the composite material, the carrier transporting material, or the like. This makes it possible to attenuate light of a wavelength not resonating while strengthening light of a wavelength resonating between the reflective electrode and the semi-transmissive/semi-reflective electrode.

Note that the light reflected by the reflective electrode (first reflected light) greatly interferes with the light (first incident light) directly entering the semi-transmissive and semi-reflective electrode from the light-emitting layer. Therefore, it is preferable to adjust the optical length between the reflective electrode and the light-emitting layer to (2n-1) λ/4 (note that n is a natural number of 1 or more, and λ is the wavelength of light to be amplified). By adjusting the optical path length, the phase of the first reflected light can be made to coincide with that of the first incident light, whereby the light emitted from the light-emitting layer can be further amplified.

In the above structure, the EL layer may include a plurality of light-emitting layers, or may include one light-emitting layer. For example, the following structure may be adopted: in a combination of the EL layer and the above tandem type light emitting device, in one light emitting device, a plurality of EL layers are provided with a charge generation layer sandwiched therebetween, each of the EL layers including one or more light emitting layers.

(embodiment mode 3)

In this embodiment, an example of an electronic device including each of the light-emitting devices described in embodiment 1 and embodiment 2 will be described. The light-emitting devices described in embodiment modes 1 and 2 have a long life and are highly reliable. As a result, the electronic device described in the present embodiment can include a light-emitting portion with high reliability.

Examples of electronic devices using the light-emitting device include television sets (also referred to as television sets or television receivers), monitors of computers and the like, digital cameras, digital video cameras, digital photo frames, mobile phones (also referred to as mobile phones or mobile phone sets), portable game machines, portable information terminals, audio reproducing devices, large-sized game machines such as pachinko machines, and the like. Specific examples of these electronic devices are shown below.

Fig. 11A shows an example of a television device. In the television device, a display portion 7103 is incorporated in a housing 7101. In addition, a structure in which the housing 7101 is supported by a bracket 7105 is shown here. The display portion 7103 can be configured such that an image is displayed on the display portion 7103 and the light-emitting devices described in embodiment 1 and embodiment 2 are arranged in a matrix.

The television apparatus can be operated by using an operation switch provided in the housing 7101 or a remote controller 7110 provided separately. By using the operation keys 7109 of the remote controller 7110, channels and volume can be controlled, and thus, an image displayed on the display portion 7103 can be controlled. Further, the remote controller 7110 may be provided with a display portion 7107 for displaying data output from the remote controller 7110.

The television device is configured to include a receiver, a modem, and the like. General television broadcasts can be received by a receiver. Further, the modem is connected to a wired or wireless communication network, thereby enabling data communication in one direction (from a sender to a receiver) or in two directions (between a sender and a receiver or between receivers).

Fig. 11B1 shows a computer including a main body 7201, a housing 7202, a display portion 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like. The computer is manufactured by arranging the light-emitting devices described in embodiment 1 and embodiment 2 in a matrix and using the light-emitting devices in the display portion 7203. The computer in FIG. 11B1 may also have a structure as shown in FIG. 11B 2. The computer shown in fig. 11B2 is provided with a second display portion 7210 instead of the keyboard 7204 and the pointing device 7206. The second display unit 7210 is a touch panel, and can perform an input operation by touching an input display displayed on the second display unit 7210 with a finger or a dedicated pen. In addition, the second display portion 7210 can display not only an input display but also other images. The display portion 7203 may be a touch panel. Since the two panels are connected by the hinge portion, it is possible to prevent problems such as damage, breakage, etc. of the panels when the computer is stored or carried.

Fig. 11C shows an example of a portable terminal. The mobile phone includes a display portion 7402, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like, which are incorporated in a housing 7401. The mobile phone includes a display portion 7402 manufactured by arranging the light-emitting devices described in embodiment 1 and embodiment 2 in a matrix.

When the display portion 7402 of the mobile terminal shown in fig. 11C is touched with a finger or the like, data can be input to the mobile terminal. In this case, an operation such as making a call or writing an email can be performed by touching the display portion 7402 with a finger or the like.

The display portion 7402 mainly has three screen modes. The first is a display mode mainly for displaying an image. The second is an input mode mainly for inputting information such as characters. The third is a display input mode in which two modes of the display mode and the input mode are mixed.

For example, in the case of making a call or composing an e-mail, characters displayed on the screen may be input in a character input mode in which the display portion 7402 is mainly used for inputting characters. In this case, it is preferable that a keyboard or number buttons be displayed in most of the screen of the display portion 7402.

Further, by providing a detection device having a sensor for detecting inclination, such as a gyroscope or an acceleration sensor, in the mobile terminal, it is possible to determine the orientation of the mobile terminal (whether the mobile terminal is arranged in the portrait or landscape orientation) and automatically switch the screen display of the display portion 7402.

Further, the screen mode is switched by touching the display portion 7402 or operating an operation button 7403 of the housing 7401. Further, the screen mode may be switched according to the type of the image displayed on the display portion 7402. For example, when the image signal displayed on the display unit is data of a moving image, the screen mode is switched to the display mode. When the signal is character data, the screen mode is switched to the input mode.

In the input mode, when it is known that no touch operation input is made to the display portion 7402 for a certain period of time by detecting a signal detected by the optical sensor of the display portion 7402, the screen mode may be controlled to be switched from the input mode to the display mode.

The display portion 7402 can also be used as an image sensor. For example, by touching the display portion 7402 with the palm or the fingers, a palm print, a fingerprint, or the like is captured, and personal recognition can be performed. Further, by using a backlight that emits near-infrared light or a sensing light source that emits near-infrared light in the display portion, it is also possible to image finger veins, palm veins, and the like.

The configuration described in this embodiment can be combined with the configurations described in embodiments 1 and 2 as appropriate.

As described above, the light-emitting device including the light-emitting devices described in embodiments 1 and 2 has a very wide range of applications, and the light-emitting device can be used in electronic devices in various fields. By using the light-emitting devices described in embodiment 1 and embodiment 2, highly reliable electronic devices can be obtained.

Fig. 12A is a schematic view showing an example of the sweeping robot.

The sweeping robot 5100 includes a display 5101 on the top surface and a plurality of cameras 5102, brushes 5103, and operation buttons 5104 on the side surfaces. Although not shown, tires, a suction port, and the like are provided on the bottom surface of the sweeping robot 5100. The sweeping robot 5100 further includes various sensors such as an infrared sensor, an ultrasonic sensor, an acceleration sensor, a piezoelectric sensor, an optical sensor, and a gyro sensor. In addition, the sweeping robot 5100 includes a wireless communication unit.

The sweeping robot 5100 can automatically walk to detect the garbage 5120, and can suck the garbage through the suction inlet on the bottom surface.

The sweeping robot 5100 analyzes the image captured by the camera 5102, and can determine the presence or absence of an obstacle such as a wall, furniture, or a step. In addition, in the case where the sweeping robot 5100 detects an object (wiring or the like) that may be wound around the brush 5103 through image analysis, the rotation of the brush 5103 may be stopped.

The display 5101 may display the remaining amount of the battery, the amount of the garbage sucked, and the like. The display 5101 may also display the walking path of the sweeping robot 5100. The display 5101 may be a touch panel, and the operation buttons 5104 may be displayed on the display 5101.

The sweeping robot 5100 can communicate with a portable electronic device 5140 such as a smartphone. The portable electronic device 5140 can display an image taken by the camera 5102. Therefore, the owner of the sweeping robot 5100 can know the condition of the room even when going out. In addition, the display content of the display 5101 can be confirmed using a portable electronic device 5140 such as a smartphone.

The light-emitting device of one embodiment of the present invention can be used for the display 5101.

The robot 2100 illustrated in fig. 12B includes a computing device 2110, an illuminance sensor 2101, a microphone 2102, an upper camera 2103, a speaker 2104, a display 2105, a lower camera 2106, an obstacle sensor 2107, and a moving mechanism 2108.

The microphone 2102 has a function of detecting the voice of the user, the surrounding voice, and the like. In addition, the speaker 2104 has a function of emitting sound. The robot 2100 may communicate with a user using a microphone 2102 and a speaker 2104.

The display 2105 has a function of displaying various information. The robot 2100 may display information desired by the user on the display 2105. The display 2105 may be mounted with a touch panel. The display 2105 may be a detachable information terminal, and when the information terminal is installed at a predetermined position of the robot 2100, charging and data transmission and reception are possible.

Both the upper camera 2103 and the lower camera 2106 have a function of imaging the environment around the robot 2100. The obstacle sensor 2107 may detect the presence or absence of an obstacle in front of the robot 2100 when it moves using the movement mechanism 2108. The robot 2100 can recognize the surrounding environment using the upper camera 2103, the lower camera 2106, and the obstacle sensor 2107 and can move safely. The light-emitting device of one embodiment of the present invention can be used for the display 2105.

Fig. 12C shows an example of the goggle type display. The goggle type display includes, for example, a housing 5000, a display portion 5001, a speaker 5003, an LED lamp 5004, a connection terminal 5006, a sensor 5007 having a function of measuring a force, a displacement, a position, a velocity, an acceleration, an angular velocity, a rotational speed, a distance, light, liquid, magnetism, a temperature, a chemical substance, sound, time, hardness, an electric field, current, voltage, electric power, radiation, a flow rate, humidity, inclination, vibration, smell, or infrared ray, a microphone 5008, a display portion 5002, a support portion 5012, an earphone 5013, and the like.

The light-emitting device according to one embodiment of the present invention can be used for the display portion 5001 and the display portion 5002.

The light-emitting devices described in embodiments 1 and 2 can be used for a windshield of an automobile or an instrument panel of an automobile. Fig. 13 shows an embodiment in which the light-emitting devices described in embodiment 1 and embodiment 2 are used for a windshield of an automobile or an instrument panel of an automobile. Each of the display regions 5200 to 5203 includes the light-emitting devices described in embodiment modes 1 and 2.

Both the display region 5200 and the display region 5201 are display devices provided on a windshield of an automobile and to which the light-emitting devices described in embodiment modes 1 and 2 are mounted. The light-emitting devices described in embodiment modes 1 and 2 can be so-called see-through display devices in which the opposite surfaces can be seen by manufacturing an anode and a cathode using light-transmitting electrodes. If the see-through display is adopted, the field of view is not obstructed even if the display is arranged on the windshield of the automobile. In addition, in the case where a transistor or the like for driving is provided, a transistor having light transmittance such as an organic transistor using an organic semiconductor material or a transistor including an oxide semiconductor is preferably used.

A display device in which the light-emitting devices described in embodiment modes 1 and 2 are mounted is provided in a column portion in a display region 5202. By displaying an image taken by an imaging unit provided on the vehicle compartment on the display area 5202, the view blocked by the pillar can be supplemented. In addition, similarly, the display area 5203 provided on the dashboard section can supplement the view blocked by the vehicle compartment by displaying the image captured by the imaging unit provided outside the vehicle. Therefore, the dead space can be supplemented, and the safety can be improved. By displaying an image to supplement a portion that the driver does not see, the driver is more natural and easier to confirm safety.

The display area 5203 may also provide various information by displaying navigation data, a speedometer, a tachometer, a travel distance, a fuel charge amount, a gear state, setting of an air conditioner, and the like. The user can change the display contents and arrangement appropriately. These pieces of information may be displayed in the display regions 5200 to 5202. In addition, the display regions 5200 to 5203 may be used as illumination devices.

Fig. 14A and 14B show a foldable portable information terminal 5150. The foldable portable information terminal 5150 includes a housing 5151, a display area 5152, and a bending portion 5153. Fig. 14A shows a portable information terminal 5150 in an expanded state. Fig. 14B shows the portable information terminal in a folded state. Although the portable information terminal 5150 has a large display area 5152, it is made small by folding the portable information terminal 5150 to have excellent portability.

The display area 5152 may be folded in half by the bent portion 5153. The curved portion 5153 is composed of a stretchable member and a plurality of support members, and when the display region is folded, the stretchable member is stretched and folded so that the curved portion 5153 has a radius of curvature of 2mm or more, preferably 3mm or more.

The display region 5152 may be a touch panel (input/output device) to which a touch sensor (input device) is attached. A light-emitting device of one embodiment of the present invention can be used for the display region 5152.

Further, fig. 15A to 15C illustrate a foldable portable information terminal 9310. Fig. 15A shows the portable information terminal 9310 in an expanded state. Fig. 15B shows the portable information terminal 9310 in the middle of expansion or in the middle of folding. Fig. 15C shows a portable information terminal 9310 in a folded state. The portable information terminal 9310 has a large display area with seamless splicing in the expanded state, and therefore has a high display list property.

The display panel 9311 is supported by three housings 9315 to which hinge portions 9313 are connected. Note that the display panel 9311 may be a touch panel (input/output device) mounted with a touch sensor (input device). In addition, by folding the display panel 9311 at the hinge portion 9313 between the two housings 9315, the portable information terminal 9310 can be reversibly changed from the unfolded state to the folded state. The light-emitting device of one embodiment of the present invention can be used for the display panel 9311.

< reference example >

In this reference example, a method for calculating the HOMO level, the LUMO level, and the electron mobility of the organic compound used in each example will be described.

The HOMO level and the LUMO level can be calculated by Cyclic Voltammetry (CV) measurement.

As a measuring apparatus, an electrochemical analyzer (ALS model 600A or 600C manufactured by BAS corporation) was used. The solution for CV measurement was prepared as follows: as a solvent, dehydrated dimethylformamide (DMF, manufactured by Sigma-Aldrich, Ltd., 99.8%, catalog number: 22705-6) was used, and tetra-n-butylammonium perchlorate (n-Bu) as a supporting electrolyte was used₄NClO₄) (manufactured by Tokyo Chemical Industry co., Ltd.) catalog No.: t0836) was dissolved at a concentration of 100mmol/L, and the object to be measured was dissolved at a concentration of 2mmol/L to prepare a solution. Further, a platinum electrode (BAS) was used as the working electrodePTE platinum electrode manufactured by Kabushiki Kaisha), a platinum electrode (Pt counter electrode (5cm) for VC-3, manufactured by BAS Co., Ltd.) was used as an auxiliary electrode, and Ag/Ag was used as a reference electrode⁺An electrode (RE 7 non-aqueous solution type reference electrode manufactured by BAS Co., Ltd.). Note that the measurement was performed at room temperature (20 ℃ C. to 25 ℃ C.). The scanning speed in CV measurement was set to 0.1V/sec, and the oxidation potential Ea [ V ] of the reference electrode was measured]And a reduction potential Ec [ V ]]. The potential Ea is the intermediate potential between the oxidation-reduction waves and Ec is the intermediate potential between the reduction-oxidation waves. Here, it is known that the potential of the reference electrode used in the present reference example with respect to the vacuum level is-4.94 [ eV [ ]]Therefore, the HOMO level and LUMO level, i.e., HOMO level [ eV ] can be obtained by the following equation](ii) LUMO energy level [ eV ] of-4.94-Ea]＝-4.94-Ec。

The electron mobility can be measured by an Impedance Spectroscopy (IS) method.

As a method for measuring the carrier mobility of the EL material, a time of flight (TOF) method, a method using the I-V characteristic of a Space Charge Limited Current (SCLC), or the like is known. The TOF method requires a sample having a larger film thickness than an actual organic EL element. The SCLC method has a disadvantage that the electric field intensity dependence of the carrier mobility cannot be obtained. In the IS method, since the thickness of an organic film required for measurement IS thin (about several hundred nm), a film can be formed using a small amount of an EL material, and mobility can be measured with a film thickness close to that of an actual EL element. In the above method, the electric field intensity dependence of the carrier mobility can also be obtained.

In the IS method, a minute sine wave voltage signal (V ═ V) IS applied to the EL element₀[exp(jωt)]) From which a current signal is respondedThe phase difference between the current amplitude of the EL element and the input signal is obtained as the impedance (Z-V/I) of the EL element. By applying the voltage to the EL element while changing from a high-frequency voltage to a low-frequency voltage, components having various relaxation times contributing to impedance can be separated and measured.

Here, the admittance Y (1/Z) of the reciprocal of the impedance may be represented by the conductance G and the susceptance B as in the following equation (1).

[ equation 1]

Furthermore, the following equations (2) and (3) can be calculated by a single injection (single injection) model. Here, g in equation (4) is the differential conductance. Note that, in the formula, C represents electrostatic capacitance, θ represents a transition angle (ω t), and ω represents an angular frequency. t represents the transit time. Current equations, poisson's equation, current continuity equation were used as analyses, and diffusion currents and the presence of trap states were ignored.

[ equation 2]

The method of calculating the mobility from the frequency characteristics of the capacitance is the- Δ B method. The method of calculating the mobility from the frequency characteristics of the electric conduction is the ω Δ G method.

In practice, first, only electronic components are manufactured using a material for which electron mobility is intended. The electronic-only element is designed such that only electrons flow as carriers. In this specification, a method of calculating mobility from the frequency characteristic of the capacitance (- Δ B method) will be described. Fig. 16 shows a schematic of only the electronic components used for the assay.

As shown in fig. 16, the first layer 1210, the second layer 1211, and the third layer 1212 are provided between the first electrode 1201 and the second electrode 1202 for the electronic element only to be manufactured for measurement. A material whose electron mobility is to be obtained is used as the material of the second layer 1211. This time by reacting 2- {4- [9, 10-bis (naphthalen-2-yl) -2-anthryl ] phenyl } -1-phenyl-1H-benzimidazole (abbreviation: ZADN) with Liq of 1:1 (weight ratio) is used as an example to describe the measurement of the electron mobility of a film formed by co-evaporation. Specific structures are shown in the following table.

[ Table 1]

Fig. 17 shows current density-voltage characteristics of only electronic elements using a film formed by co-evaporation of ZADN and Liq as the second layer 1211.

Impedance measurement was performed under conditions of an alternating voltage of 70mV and a frequency of 1Hz to 3MHz while applying a direct voltage in the range of 5.0V to 9.0V. Here, the capacitance is calculated from the admittance of the reciprocal of the obtained impedance (the above equation (1)). Fig. 18 shows the frequency characteristic of the capacitance C calculated when the applied voltage is 7.0V.

Since space charge generated by carriers injected by a minute voltage signal cannot completely follow a minute alternating voltage, the frequency characteristic of the capacitor C is obtained from a phase difference generated by a current. Here, the travel time of the carriers injected into the film is defined by the time T until the carriers reach the counter electrode, and is expressed by the following equation (5).

[ equation 3]

The negative susceptance change (- Δ B) corresponds to the electrostatic capacitance change- Δ C multiplied by the value of the angular frequency ω (- ω Δ C). Deriving the peak frequency f 'on the lowest frequency side from equation (3)'_max(＝ω_maxAnd/2 pi) and the running time T satisfy the relationship of the following equation (6).

[ equation 4]

Fig. 19 shows the frequency characteristics of- Δ B (i.e., - Δ B- Δ when the dc voltage is 7.0V) calculated from the above measurement. In FIG. 19, the peak frequency f 'on the lowest frequency side is shown by an arrow'_max。

Due to f 'obtained from the above measurement and analysis'_maxSince the running time T is obtained (see the above equation (6)), the electron mobility when the dc voltage is 7.0V can be obtained from the above equation (5) in this example. By performing the same measurement in the range of the dc voltage of 5.0V to 9.0V, the electron mobility of each voltage (electric field strength) can be calculated, and therefore the electric field strength dependency of the mobility can also be measured.

FIG. 20 shows the final dependence of the electric field intensity on the electron mobility of each organic compound obtained by the above calculation method, and Table 10 shows the electric field intensity [ V/cm ] read out from the figure]Has a square root of 600[ V/cm ]]^1/2The value of electron mobility.

[ Table 2]

The electron mobility can be calculated as described above. Note that, as for a detailed measurement method, the following references are referred to: "Japanese Journal of Applied Physics" Vol.47, No.12, pp.8965-8972, 2008 of Okachi et al.

(embodiment mode 4)

< example of semiconductor device construction >

An embodiment of the present invention will be described with reference to the drawings. Fig. 23 is a perspective view showing an appearance of a semiconductor device 400 that can be used as a Head Mounted Display (HMD).

The semiconductor device 400 includes a display module 401 (a display module 401R and a display module 401L), a display control unit 402, a power supply unit 403, an operation unit 404, a speaker 405, an external input/output terminal 406, a fixing tape 407, and a lens 408.

The display module 401 performs display based on a signal supplied from the display control unit 402. The display control unit 402 includes an arithmetic circuit such as a Central Processing Unit (CPU) or a Graphics Processing Unit (GPU) and processes an image signal supplied from the outside. The power supply section 403 generates and supplies a power supply voltage for driving the semiconductor device 400. The operation unit 404 is used when the user operates the semiconductor device 400. The speaker 405 operates based on an audio signal supplied from the outside through the external input/output terminal 406. Various signals such as an image signal and an audio signal supplied from the outside are input to the external input/output terminal 406 or output from the external input/output terminal 406. The securing strap 407 is used to secure the semiconductor device 400 to the head of a user. The lens 408 is used to magnify the display module 401.

The user views the display module 401 through the lens. Since the user views the enlarged image of the display module 401, a high degree of immersion can be obtained.

< example of Structure of display Module >

In order to enlarge and view the image on the display module 401, the display panel for the display module 401 preferably has high definition. Fig. 24A and 24B show perspective views of the display module 401.

The display module 401 shown in fig. 24A includes a display device 411 and a Flexible Printed Circuit (FPC) 412. The display device 411 may use a light-emitting device according to one embodiment of the present invention.

The display module 401 includes a substrate 421 and a substrate 422. The display module 401 includes a display portion 431.

Fig. 24B is a perspective view schematically showing a structure of the substrate 421 side. In the display portion 431, a circuit portion 441, a pixel circuit portion 442, and a pixel portion 443 are sequentially stacked over a substrate 421. Further, a terminal portion 444 to be connected to the FPC412 is provided over the substrate 421 outside the display portion 431. The terminal portion 444 is electrically connected to the circuit portion 441 through a wiring portion 445 formed of a plurality of wirings.

The pixel portion 443 includes a plurality of pixels 443a arranged in a matrix. The right side of fig. 24B shows an enlarged view of one pixel 443 a. The pixel 443a includes four color sub-pixels of red (R), green (G), blue (B), and white (W). Note that although the pixel 443a has a structure of sub-pixels of four colors in this embodiment mode, the structure of the pixel 443a is not limited thereto. For example, the pixel 443a may include three color sub-pixels of red (R), green (G), and blue (B).

The pixel circuit section 442 includes a plurality of pixel circuits 442a arranged in a matrix. The one pixel circuit 442a is a circuit which controls light emission of four sub-pixels included in the one pixel 443 a. One pixel circuit 442a may include four circuit configurations each controlling light emission of one sub-pixel. For example, the pixel circuit 442a may have at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each sub-pixel. At this time, a gate signal is input to the gate of the selection transistor, and a source signal is input to one of the source and the drain. By adopting the above configuration, an active matrix display device can be realized.

The circuit portion 441 includes a circuit for driving each pixel circuit 442a of the pixel circuit portion 442. For example, it is preferable to have one or both of a gate driver and a source driver. In addition, an arithmetic circuit, a memory circuit, a power supply circuit, and the like may be provided.

The FPC412 functions as a wiring for supplying a video signal or a power supply potential to the circuit portion 441 from the outside. Further, an IC may be mounted on the FPC 412.

Since the display module 401 can have a structure in which the pixel circuit portion 442, the circuit portion 441, and the like are stacked under the pixel portion 443, the display portion 431 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display portion 431 may be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. In addition, the pixels 443a can be arranged at extremely high density, whereby the display portion 431 can have extremely high definition. For example, the display portion 431 preferably arranges the pixels 443a with a resolution of 2000ppi or more, preferably 3000ppi or more, more preferably 5000ppi or more, and further preferably 6000ppi or more and 20000ppi or less or 30000ppi or less.

The high-definition display module 401 is suitably used for the semiconductor device 400 which can be used in a Virtual Reality (VR) device such as HMD or a glasses-type Augmented Reality (AR) device shown in fig. 23. Even if the high-definition display module 401 is used for a device that views the display portion through a lens, the pixels of the display portion enlarged through the lens are not easily seen by the user, whereby display with a high sense of immersion can be performed. In addition, the display module 401 can also be applied to an electronic apparatus having a relatively small display portion. For example, the display module 401 is suitably used in a display portion of a wearable electronic device such as a smart watch.

< example of transistor construction >

In the high-definition display module 401, a transistor which can be microfabricated is preferably used as a transistor of the pixel circuit portion 442 or the like. Fig. 25A and 25B illustrate cross-sectional views of transistors that can be used for the display device 411.

Fig. 25A is a cross-sectional view in the channel length direction of a transistor 500 which can be used for the display device 411, and fig. 25B is a cross-sectional view in the channel width direction of the transistor 500.

As shown in fig. 25A and 25B, the transistor 500 includes: an insulator 512; an insulator 514 and an insulator 516 provided on the insulator 512; an electrical conductor 503 embedded in the insulator 514 and the insulator 516; an insulator 520 over the insulator 516 and the conductive body 503; an insulator 522 on the insulator 520; an insulator 524 on insulator 522; oxide 530a on insulator 524; oxide 530b over oxide 530 a; conductors 542a and 542b spaced apart from each other on oxide 530 b; an insulator 580 having an opening formed between the conductor 542a and the conductor 542b, on the conductor 542a and the conductor 542 b; oxide 530c on the bottom and sides of the opening; an insulator 550 in contact with the oxide 530 c; and a conductive body 560 in contact with the insulator 550.

As shown in fig. 25A and 25B, the insulator 544 is preferably provided between the insulator 580 and the oxide 530a, the oxide 530B, the conductor 542a, and the conductor 542B. As shown in fig. 25A and 25B, the conductor 560 preferably includes a conductor 560a provided inside the insulator 550 and a conductor 560B embedded inside the conductor 560 a. As shown in fig. 25A and 25B, an insulator 574 is preferably disposed on the insulator 580, the conductor 560, and the insulator 550.

Note that the oxide 530a, the oxide 530b, and the oxide 530c are collectively referred to as an oxide 530 in some cases.

The transistor 500 has a structure in which an oxide 530a, an oxide 530b, and an oxide 530c are stacked over a region where a channel is formed and the vicinity thereof, but the present invention is not limited thereto. For example, the transistor 500 may have a single layer of the oxide 530b, a two-layer structure of the oxide 530b and the oxide 530a or the oxide 530c, or a stacked-layer structure of four or more layers. In addition, in the transistor 500, the conductive body 560 has a two-layer structure, but the present invention is not limited thereto. For example, the conductor 560 may have a single-layer structure or a stacked-layer structure of three or more layers. Note that the structure of the transistor 500 shown in fig. 25A and 25B is merely an example and is not limited to the above-described structure, and an appropriate transistor can be used depending on a circuit structure or a driving method.

Here, the conductor 560 is used as a gate electrode of the transistor 500, and the conductor 542a and the conductor 542b are used as a source electrode or a drain electrode. As described above, the conductor 560 is buried in the opening of the insulator 580 and in the region sandwiched between the conductor 542a and the conductor 542 b. The arrangement of the conductors 560, 542a, and 542b with respect to the opening of the insulator 580 is selected to be self-aligned. In other words, in the transistor 500, a gate electrode can be arranged in self-alignment between a source electrode and a drain electrode. Thus, the conductor 560 can be formed without providing a space for alignment, and therefore, the area occupied by the transistor 500 can be reduced. Thus, miniaturization and high integration of the semiconductor device can be achieved.

Since the conductor 560 is formed in a self-aligned manner in a region between the conductors 542a and 542b, the conductor 560 does not include a region overlapping with the conductors 542a and 542 b. This can reduce the parasitic capacitance formed between the conductor 560 and the conductors 542a and 542 b. Accordingly, the switching speed of the transistor 500 can be increased, so that the transistor 500 can have high frequency characteristics.

The conductive body 560 is sometimes used as a first gate (also referred to as a top gate) electrode. The conductive body 503 is sometimes used as a second gate (also referred to as a bottom gate) electrode. In this case, the threshold voltage of the transistor 500 can be controlled by independently changing the potential supplied to the conductor 503 without interlocking with the potential supplied to the conductor 560. In particular, by supplying a negative potential to the conductive body 503, the threshold voltage of the transistor 500 can be made larger than 0V and the off-state current can be reduced. Therefore, when a negative potential is applied to the conductor 503, the drain current when the potential applied to the conductor 560 is 0V can be reduced as compared with the case where a negative potential is not applied to the conductor 503.

The conductor 503 is disposed so as to have an overlapping region with the oxide 530 and the conductor 560. Thus, when a potential is applied to the conductor 560 and the conductor 503, the electric field generated from the conductor 560 and the electric field generated from the conductor 503 are connected to each other, and the channel formation region formed in the oxide 530 can be covered. In this specification and the like, a structure of a transistor in which a channel formation region is electrically surrounded by an electric field of a first gate electrode and an electric field of a second gate electrode is referred to as a surrounded channel structure.

In the conductor 503, a conductor 503a is formed so as to be in contact with the inner walls of the openings of the insulator 514 and the insulator 516, and a conductor 503b is formed inside the conductor 503 a. In the transistor 500, the conductor 503a and the conductor 503b are stacked, but the present invention is not limited to this. For example, the conductor 503 may have a single-layer structure or a stacked-layer structure of three or more layers.

Here, the conductor 503a is preferably formed using a conductive material having a function of suppressing diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms, that is, a function of hardly allowing the impurities to permeate therethrough. The conductor 503a is preferably formed using a conductive material having a function of suppressing diffusion of oxygen (for example, at least one of oxygen atoms and oxygen molecules), that is, a function of hardly allowing the oxygen to permeate therethrough. In the present specification and the like, the "function of suppressing diffusion of an impurity or oxygen" means a function of suppressing diffusion of any or all of the impurity and the oxygen.

For example, by providing the conductor 503a with a function of suppressing oxygen diffusion, a decrease in conductivity due to oxidation of the conductor 503b can be suppressed.

When the conductor 503 functions as a wiring, the conductor 503b is preferably formed using a conductive material having high conductivity and containing tungsten, copper, or aluminum as a main component. In this case, the conductor 503a does not necessarily have to be provided. In the drawing, the conductive body 503b has a single-layer structure, but may have a stacked-layer structure, for example, a stacked-layer structure of titanium or titanium nitride and any of the above-described conductive materials may be employed.

The insulator 520, the insulator 522, and the insulator 524 are used as the second gate insulating film.

Here, as the insulator 524 in contact with the oxide 530, an insulator containing oxygen in excess of the stoichiometric composition is preferably used. In other words, the insulator 524 preferably has an excess oxygen region formed therein. By providing the above insulator containing excess oxygen in contact with the oxide 530, oxygen vacancies in the oxide 530 can be reduced, and the reliability of the transistor 500 can be improved.

Specifically, as the insulator having the excess oxygen region, an oxide material in which a part of oxygen is desorbed by heating is preferably used. The oxide that releases oxygen by heating means that the amount of oxygen released as converted to oxygen atoms in TDS analysis is 1.0X 10¹⁸atoms/cm³Above, preferably 1.0X 10¹⁹atoms/cm³The above is more preferably 2.0 × 10¹⁹atoms/cm³Above, or 3.0 × 10²⁰atoms/cm³The above oxide film. In the TDS analysis, the surface temperature of the film is preferably 100 ℃ to 700 ℃ or more, or 100 ℃ to 400 ℃ or less.

In addition, the insulator having the above-described excess oxygen region and the oxide 530 may be brought into contact with each other to perform one or more of heating treatment, microwave treatment, and RF treatment. By performing this treatment, water or hydrogen in the oxide 530 can be removed. For example, in the oxide 530, a reaction of bond cleavage of VoH, in other words, a reaction of "VoH → Vo + H" occurs, and dehydrogenation can be achieved. Some of the hydrogen produced here isWhen bonded to oxygen as H₂O is removed from oxide 530 or the insulator near oxide 530. In addition, a part of hydrogen may diffuse into the conductor 542 or be gettered by the conductor 542.

In addition, for example, a device having power for generating high-density plasma or a device for applying RF power to the substrate side is preferably used for the microwave treatment. For example, by using a gas containing oxygen and using high-density plasma, high-density oxygen radicals can be generated. By applying RF to the substrate side, oxygen radicals generated by high-density plasma can be efficiently introduced into the oxide 530 or the insulator near the oxide 530. In the microwave treatment, the pressure may be 133Pa or more, preferably 200Pa or more, and more preferably 400Pa or more. Further, as the gas introduced into the apparatus for performing the microwave treatment, for example, oxygen and argon are used, and the microwave treatment is performed at an oxygen flow rate ratio (O)₂/(O₂+ Ar)) is 50% or less, preferably 10% or more and 30% or less.

In the manufacturing process of the transistor 500, it is preferable that the surface of the oxide 530 be exposed to heat treatment. The heat treatment is preferably performed at 100 ℃ or higher and 450 ℃ or lower, and more preferably at 350 ℃ or higher and 400 ℃ or lower, for example. The heat treatment is performed in a nitrogen gas or inert gas atmosphere or an atmosphere containing 10ppm or more, 1% or more, or 10% or more of an oxidizing gas. For example, the heat treatment is preferably performed under an oxygen atmosphere. Through the above steps, oxygen may be supplied to the oxide 530 and the oxygen vacancy (Vo) may be reduced. The heat treatment may be performed under reduced pressure. Alternatively, the heat treatment may be performed in a nitrogen gas or inert gas atmosphere, and then performed in an atmosphere containing 10ppm or more, 1% or more, or 10% or more of an oxidizing gas in order to compensate for the released oxygen. Alternatively, the heat treatment may be performed in an atmosphere containing 10ppm or more, 1% or more, or 10% or more of an oxidizing gas, and then the heat treatment may be continuously performed in a nitrogen gas atmosphere or an inert gas atmosphere.

In addition, by subjecting the oxide 530 to oxidation treatment, it is possible toFilling the oxygen vacancy in the oxide 530 with the supplied oxygen, in other words, the reaction of "Vo + O → null" can be promoted. Further, hydrogen remaining in the oxide 530 reacts with oxygen supplied to the oxide 530, and the hydrogen may be treated as H₂O is removed (dehydrogenation is performed). This suppresses the recombination of hydrogen remaining in the oxide 530 and oxygen vacancies to form VoH.

When the insulator 524 has an excess oxygen region, the insulator 522 preferably has a function of suppressing diffusion of oxygen (e.g., oxygen atoms, oxygen molecules, or the like). In other words, the oxygen is preferably not easily permeated through the insulator 522.

When the insulator 522 has a function of suppressing diffusion of oxygen or impurities, oxygen contained in the oxide 530 is preferably not diffused to the insulator 520 side. In addition, the conductive body 503 can be suppressed from reacting with oxygen in the insulator 524 or the oxide 530.

The insulator 522 is preferably made of, for example, aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), tantalum oxide, zirconium oxide, lead zirconate titanate (PZT), or strontium titanate (SrTiO)₃) Or (Ba, Sr) TiO₃A single layer or a stack of insulators of so-called high-k material such as (BST). When miniaturization and high integration of a transistor are performed, a problem of leakage current or the like may occur due to the thinning of a gate insulating film. When a high-k material is used as an insulator used as a gate insulating film, a gate potential at the time of operation of a transistor can be reduced while maintaining the physical thickness of the gate insulating film.

In particular, it is preferable to use an insulator containing an oxide of one or both of aluminum and hafnium as an insulating material having a function of suppressing diffusion of impurities, oxygen, and the like, that is, an insulating material that does not easily allow the oxygen to permeate therethrough. As the insulator containing an oxide of one or both of aluminum and hafnium, aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like is preferably used. When the insulator 522 is formed using such a material, the insulator 522 functions as a layer which suppresses release of oxygen from the oxide 530 or entry of impurities such as hydrogen into the oxide 530 from the peripheral portion of the transistor 500.

Alternatively, for example, alumina, bismuth oxide, germanium oxide, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, or zirconium oxide may be added to the insulator. Further, the insulator may be subjected to nitriding treatment. Silicon oxide, silicon oxynitride, or silicon nitride may be stacked over the insulator.

The insulator 520 preferably has thermal stability. For example, silicon oxide and silicon oxynitride are preferable because they have thermal stability. In addition, by combining an insulator of a high-k material with silicon oxide or silicon oxynitride, the insulator 520 having a stacked-layer structure which is thermally stable and has a high dielectric constant can be formed.

In the transistor 500 in fig. 25A and 25B, the insulator 520, the insulator 522, and the insulator 524 are used as the second gate insulating film having a three-layer stacked structure, but the second gate insulating film may have a single-layer structure, a two-layer structure, or a stacked structure of four or more layers. In this case, the stacked structure is not limited to be formed using the same material, and may be formed using different materials.

In the transistor 500, a metal oxide which is used as an oxide semiconductor is preferably used as the oxide 530 including a channel formation region. For example, as the oxide 530, a metal oxide such as an In-M-Zn oxide (In which the element M is one or more selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) is used. In particular, the In-M-Zn Oxide that can be used as the Oxide 530 is preferably a c-axis oriented crystalline Oxide Semiconductor (CAAC-OS) or a Cloud-Aligned Composite Oxide Semiconductor (CAC-OS). In addition, as the oxide 530, an In-Ga oxide or an In-Zn oxide can be used. CAAC-OS and CAC-OS will be described later. In order to increase the on-state current of the transistor 500, an In — Zn oxide is preferably used as the oxide 530. When an In — Zn oxide is used as the oxide 530, for example, the following structure can be adopted: an In-Zn oxide is used for the oxide 530a, and an In-M-Zn oxide is used for the oxide 530b and the oxide 530 c; or a stacked-layer structure In which an In-M-Zn oxide is used for the oxide 530a and an In-Zn oxide is used for one of the oxide 530b and the oxide 530 c.

In addition, a metal oxide having a low carrier density is preferably used for the transistor 500. In order to reduce the carrier concentration of the metal oxide, the impurity concentration in the metal oxide may be reduced to reduce the defect state density. In this specification and the like, a state where the impurity concentration is low and the defect state density is low is referred to as "high-purity intrinsic" or "substantially high-purity intrinsic". Examples of the impurities in the metal oxide include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

In particular, hydrogen contained in the metal oxide reacts with oxygen bonded to the metal atom to generate water, and thus oxygen vacancies are sometimes formed in the metal oxide. When hydrogen enters the oxygen vacancy of the oxide 530, the oxygen vacancy may be bonded to hydrogen to form VoH. VoH are sometimes used as donors and generate electrons as carriers. In addition, some of the hydrogen is bonded to oxygen that reacts with the metal atom, and electrons as carriers are generated in some cases. Therefore, a transistor using a metal oxide containing much hydrogen easily has a normally-on characteristic. Further, since hydrogen in the metal oxide is easily moved by heat, an electric field, or the like, when the metal oxide contains a large amount of hydrogen, the reliability of the transistor may be lowered. In one embodiment of the present invention, it is preferable that VoH in oxide 530 be minimized to be intrinsic or substantially intrinsic with high purity. To obtain such a metal oxide reduction of VoH, it is important: removing impurities such as water and hydrogen in the metal oxide (sometimes referred to as dehydration and dehydrogenation treatment); and supplying oxygen to the metal oxide to fill the oxygen vacancies (sometimes referred to as an oxidation process). When a metal oxide in which impurities such as VoH are sufficiently reduced is used for a channel formation region of a transistor, stable electrical characteristics can be provided.

The defects of hydrogen entering the oxygen vacancies will act as donors for the metal oxide. However, it is difficult to quantitatively evaluate the defect. Therefore, in the metal oxide, the defect is evaluated not by using the donor concentration but by using the carrier concentration. Therefore, in this specification and the like, as a parameter of the metal oxide, not the donor concentration but the carrier concentration in a state where no electric field is applied may be used. In other words, the "carrier concentration" described in this specification and the like may be referred to as "donor concentration" instead.

Therefore, when a metal oxide is used for the oxide 530, it is preferable to reduce hydrogen in the metal oxide as much as possible. Specifically, the concentration of hydrogen in the metal oxide is less than 1X 10 as measured by Secondary Ion Mass Spectrometry (SIMS)²⁰atoms/cm³Preferably less than 1X 10¹⁹atoms/cm³More preferably less than 5X 10¹⁸atoms/cm³More preferably less than 1X 10¹⁸atoms/cm³. When a metal oxide in which impurities such as hydrogen are sufficiently reduced is used for a channel formation region of a transistor, the transistor can have stable electrical characteristics.

When a metal oxide is used as the oxide 530, the carrier density of the metal oxide in the channel formation region is preferably 1 × 10¹⁸cm^-3Hereinafter, more preferably less than 1X 10¹⁷cm^-3And more preferably less than 1X 10¹⁶cm^-3And still more preferably less than 1X 10¹³cm^-3Still more preferably less than 1X 10¹²cm^-3. Note that the lower limit of the carrier concentration of the metal oxide in the channel formation region is not particularly limited, and may be set to 1 × 10, for example^-9cm^-3。

When a metal oxide is used as the oxide 530, when the conductor 542 (the conductor 542a and the conductor 542b) is in contact with the oxide 530, oxygen in the oxide 530 may diffuse into the conductor 542 and the conductor 542 may be oxidized. When the conductor 542 is oxidized, the electrical conductivity of the conductor 542 is likely to decrease. Further, "oxygen diffuses from the oxide 530 to the conductor 542" may be referred to as "the conductor 542 absorbs oxygen in the oxide 530".

When oxygen in the oxide 530 diffuses into the conductors 542 (the conductors 542a and 542b), a layer may be formed between the conductors 542a and 530b and between the conductors 542b and the oxide 530 b. This layer contains more oxygen than the conductor 542, and thus it is estimated that this layer has insulation properties. In this case, the three-layer structure of the conductor 542, the layer, and the oxide 530b may be regarded as a three-layer structure composed of a metal, an insulator, and a semiconductor, and may be referred to as a metal-insulator-Metal (MIS) structure or a diode junction structure having the MIS structure as a main part.

Note that the layer is not limited to be formed between the conductor 542 and the oxide 530b, and may be formed between the conductor 542 and the oxide 530 c. Alternatively, the layer may be formed between the conductor 542 and the oxide 530b and between the conductor 542 and the oxide 530 c.

In addition, the metal oxide used as a channel formation region in the oxide 530 has a band gap of 2eV or more, preferably 2.5eV or more. Thus, by using a metal oxide having a wider band gap, the off-state current of the transistor can be reduced.

In the oxide 530, when the oxide 530a is provided under the oxide 530b, impurities can be prevented from diffusing from the constituent elements formed under the oxide 530a to the oxide 530 b. When the oxide 530c is provided over the oxide 530b, impurities may be prevented from diffusing from a structure formed over the oxide 530c to the oxide 530 b.

The oxide 530 preferably has a stacked-layer structure of a plurality of oxide layers having different atomic number ratios of metal atoms. Specifically, the atomic number ratio of the element M with respect to the constituent elements in the metal oxide used as the oxide 530a is preferably larger than the atomic number ratio of the element M in the constituent elements of the metal oxide used as the oxide 530 b. In addition, the atomic number ratio of the element M with respect to In the metal oxide used as the oxide 530a is preferably larger than the atomic number ratio of the element M with respect to In the metal oxide used as the oxide 530 b. In addition, the atomic number ratio of In with respect to the element M In the metal oxide used as the oxide 530b is preferably larger than the atomic number ratio of In with respect to the element M In the metal oxide used as the oxide 530 a. In addition, the oxide 530c may be formed using a metal oxide that may be used for the oxide 530a or the oxide 530 b.

Specifically, the oxide 530a uses In: ga: 1, Zn: 3: 4[ atomic number ratio ] or In: ga: 1, Zn: 1: 0.5[ atomic number ratio ]. In addition, the oxide 530b uses In: ga: zn is 4: 2: 3[ atomic number ratio ] or In: ga: 1, Zn: 1: 1[ atomic number ratio ]. In addition, the oxide 530c uses In: ga: 1, Zn: 3: 4[ atomic number ratio ], Ga: zn is 2: 1[ atomic number ratio ] or Ga: zn is 2: 5[ atomic number ratio ]. Specific examples of the oxide 530c having a stacked-layer structure include In: ga: zn is 4: 2: 3[ atomic number ratio ] and In: ga: 1, Zn: 3: 4[ atomic number ratio ] metal oxide layered structure, Ga: zn is 2: 1[ atomic number ratio ] and In: ga: zn is 4: 2: 3[ atomic number ratio ], Ga: zn is 2: 5[ atomic number ratio ] and In: ga: zn is 4: 2: 3[ atomic number ratio ], gallium oxide, and In: ga: zn is 4: 2: a stacked structure of metal oxides of 3[ atomic number ratio ], and the like.

Preferably, the energy of the conduction band bottom of each of the oxide 530a and the oxide 530c is made higher than that of the oxide 530 b. In other words, the electron affinity of each of the oxide 530a and the oxide 530c is preferably smaller than that of the oxide 530 b.

Here, the energy level of the conduction band bottom changes gently in each junction of the oxide 530a, the oxide 530b, and the oxide 530 c. In other words, the energy levels of the conduction band bottoms of the junctions of the oxide 530a, the oxide 530b, and the oxide 530c are continuously changed or continuously joined. In order to change the energy level smoothly, it is preferable to reduce the defect state density of a mixed layer formed at the interface between the oxide 530a and the oxide 530b and the interface between the oxide 530b and the oxide 530 c.

Specifically, when the oxide 530a and the oxide 530b or the oxide 530b and the oxide 530c contain a common element (as a main component) in addition to oxygen, a mixed layer having a low defect state density can be formed. For example, when the oxide 530b is an In-Ga-Zn oxide, it is preferable to use an In-Ga-Zn oxide, a gallium oxide, or the like as the oxide 530a and the oxide 530 c.

At this time, the oxide 530b is used as a main path of carriers. When the oxide 530a and the oxide 530c have the above structure, the defect state density at the interface between the oxide 530a and the oxide 530b and the interface between the oxide 530b and the oxide 530c can be reduced. Thus, the influence of interface scattering on carrier conduction is reduced, and the transistor 500 can have a high on-state current.

Note that the semiconductor material that can be used for the oxide 530 is not limited to the above-described metal oxide. The oxide 530 may also use a semiconductor material having a bandgap (a semiconductor material that is not a zero bandgap semiconductor). For example, a semiconductor material such as a single-element semiconductor such as silicon, a compound semiconductor such as gallium arsenide, a layered substance (also referred to as an atomic layer substance, a two-dimensional material, or the like), or the like is preferably used. In particular, a layered substance having semiconductor characteristics is preferably used as the semiconductor material.

In this specification and the like, a layered substance is a general term for a group of materials having a layered crystal structure. In the layered crystal structure, layers formed by covalent bonds or ionic bonds are stacked by bonds weaker than covalent bonds or ionic bonds, such as van der waals forces. The layered substance has high conductivity per unit layer, that is, has high two-dimensional conductivity. When a material which is used as a semiconductor and has high two-dimensional conductivity is used for a channel formation region, a transistor with large on-state current can be provided.

Examples of the layered substance include graphene, silylene, and chalcogenide. Chalcogenides are compounds containing a chalcogen element. Furthermore, chalcogens are a generic term for elements belonging to the sixteenth group, which include oxygen, sulfur, selenium, tellurium, polonium, . Examples of the chalcogenide include transition metal chalcogenides and chalcogenides of group 13 elements.

As the oxide 530, for example, a transition metal chalcogenide used as a semiconductor is preferably used. As a transition metal chalcogenide which can be used for the oxide 530, molybdenum sulfide (typically MoS) can be specifically mentioned₂) Molybdenum selenide (typically MoSe)₂) Molybdenum telluride (typically MoTe)₂) Tungsten sulfide (WS)₂) Tungsten selenide (typically WSe)₂) Tungsten telluride (typically WTe)₂) Hafnium sulfide(HfS₂) Hafnium selenide (HfSe)₂) Zirconium sulfide (ZrS)₂) Zirconium selenide (ZrSe)₂) And the like.

Conductors 542a and 542b serving as source and drain electrodes are provided over the oxide 530 b. As the conductors 542a and 542b, it is preferable to use a metal element selected from aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, and lanthanum, an alloy containing any of the above metal elements, an alloy combining the above metal elements, or the like. For example, tantalum nitride, titanium nitride, tungsten, a nitride containing titanium and aluminum, a nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, an oxide containing strontium and ruthenium, an oxide containing lanthanum and nickel, or the like is preferably used. Tantalum nitride, titanium nitride, a nitride containing titanium and aluminum, a nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, an oxide containing strontium and ruthenium, and an oxide containing lanthanum and nickel are preferable because they are conductive materials which are not easily oxidized or materials which absorb oxygen and maintain conductivity. Further, a metal nitride film such as a tantalum nitride film is preferable because it has a barrier property against hydrogen or oxygen.

Although the conductors 542a and 542B have a single-layer structure in fig. 25A and 25B, a stacked structure of two or more layers may be employed. For example, a tantalum nitride film and a tungsten film are preferably stacked. Further, a titanium film and an aluminum film may be laminated. In addition, a two-layer structure in which an aluminum film is stacked over a tungsten film, a two-layer structure in which a copper film is stacked over a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is stacked over a titanium film, or a two-layer structure in which a copper film is stacked over a tungsten film may be employed.

In addition, it is also possible to use: a three-layer structure in which a titanium film or a titanium nitride film, an aluminum film or a copper film, and a titanium film or a titanium nitride film are sequentially stacked, a three-layer structure in which a molybdenum film or a molybdenum nitride film, an aluminum film or a copper film, and a molybdenum film or a molybdenum nitride film are sequentially stacked, or the like. In addition, a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may also be used.

As shown in fig. 25A, a region 543a and a region 543b may be formed as low-resistance regions at and near the interface between the oxide 530 and the conductor 542a and at and near the interface between the oxide 530 and the conductor 542 b. At this time, the region 543a is used as one of the source region and the drain region, and the region 543b is used as the other of the source region and the drain region. Further, a channel formation region is formed in a region sandwiched between the region 543a and the region 543 b.

By forming the conductors 542a and 542b so as to be in contact with the oxide 530, the oxygen concentrations of the regions 543a and 543b may decrease. In addition, a metal compound layer including a component including the metal and the oxide 530 in the conductors 542a and 542b may be formed in the region 543a and the region 543 b. In this case, the carrier concentration of each of the region 543a and the region 543b increases, and both the region 543a and the region 543b become low-resistance regions.

The insulator 544 is provided so as to cover the conductors 542a and 542b, and suppresses oxidation of the conductors 542a and 542 b. In this case, the insulator 544 may be provided so as to cover the side surface of the oxide 530 and be in contact with the insulator 524.

As the insulator 544, a metal oxide containing one or two or more kinds selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum, magnesium, and the like can be used. Further, silicon oxynitride, silicon nitride, or the like may be used as the insulator 544.

In particular, as the insulator 544, aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like, which is an insulator containing an oxide of one or both of aluminum and hafnium, is preferably used. In particular, hafnium aluminate has higher heat resistance than a hafnium oxide film and is less likely to crystallize in a heat treatment in a subsequent step. Therefore, the use of hafnium aluminate is preferred. In the case where the conductors 542a and 542b are made of a material having oxidation resistance or do not significantly decrease in conductivity even when oxygen is absorbed, the insulator 544 does not need to be necessarily provided. The transistor characteristics may be appropriately designed according to the required transistor characteristics.

The insulator 544 can suppress diffusion of impurities such as water and hydrogen contained in the insulator 580 to the oxide 530b through the oxide 530c and the insulator 550. Further, the excess oxygen contained in the insulator 580 can be suppressed from oxidizing the conductor 560.

In addition, an insulator 550 is used as the first gate insulating film. The insulator 550 is preferably provided so as to be in contact with the inner side (upper surface and side surface) of the oxide 530 c. As with the insulator 524 described above, the insulator 550 is preferably formed using an insulator that contains excess oxygen and releases oxygen by heating.

Specifically, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon and nitrogen are added, and silicon oxide having pores, each of which contains excess oxygen, can be used. In particular, silicon oxide and silicon oxynitride are preferable because they have thermal stability.

When an insulator that releases oxygen by heating is provided as the insulator 550 in contact with the top surface of the oxide 530c, oxygen can be efficiently supplied from the insulator 550 to the channel formation region of the oxide 530b through the oxide 530 c. Similarly to the insulator 524, the concentration of impurities such as water and hydrogen in the insulator 550 is preferably reduced. The thickness of the insulator 550 is preferably 1nm or more and 20nm or less.

In addition, in order to efficiently supply the excess oxygen contained in the insulator 550 to the oxide 530, a metal oxide may be provided between the insulator 550 and the conductor 560. The metal oxide is preferably capable of suppressing oxygen diffusion from the insulator 550 to the conductor 560. By providing a metal oxide capable of suppressing oxygen diffusion, the diffusion of excess oxygen from the insulator 550 to the conductor 560 is suppressed. In other words, the reduction of the excess oxygen supplied to the oxide 530 can be suppressed. Further, oxidation of the conductor 560 due to excess oxygen can be suppressed. The metal oxide may be formed using materials that may be used for the insulator 544.

In addition, the insulator 550 may have a stacked structure as in the second gate insulating film. When miniaturization and high integration of a transistor are performed, a problem of leakage current or the like may occur due to the thinning of a gate insulating film. Thus, when an insulator used as a gate insulating film has a stacked structure of a high-k material and a thermally stable material, the gate potential during operation of the transistor can be reduced while maintaining the physical thickness. In addition, a stacked structure having thermal stability and a high dielectric constant can be realized.

In fig. 25A and 25B, the conductor 560 used as the first gate electrode has a two-layer structure, but the conductor 560 may have a single-layer structure or a stacked-layer structure of three or more layers.

The conductor 560a preferably has a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, or a nitrogen oxide molecule (N) suppressed₂O、NO、NO₂Etc.), copper atoms, etc., are formed. The conductor 560a is preferably formed using a conductive material having a function of suppressing diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, and the like). When the conductor 560a has a function of suppressing diffusion of oxygen, oxidation of the conductor 560b by oxygen contained in the insulator 550 and a decrease in conductivity can be suppressed. As the conductive material having a function of suppressing oxygen diffusion, for example, tantalum nitride, ruthenium oxide, or the like is preferably used. In addition, the conductive body 560a can be formed using an oxide semiconductor which can be used for the oxide 530. At this time, when the conductor 560b is formed by the sputtering method, the resistance value of the conductor 560a can be reduced to be a conductor. This conductor may be referred to as an Oxide Conductor (OC) electrode.

As the conductor 560b, a conductive material containing tungsten, copper, or aluminum as a main component is preferably used. Since the conductor 560b is also used as a wiring, a conductor having high conductivity is preferably used. The conductive body 560b may have a stacked-layer structure, and for example, a stacked-layer structure of titanium, titanium nitride, and any of the above conductive materials may be used.

The insulator 580 is preferably provided on the conductors 542a and 542b with the insulator 544 interposed therebetween. Insulator 580 preferably has a region of excess oxygen. For example, the insulator 580 preferably contains silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine is added, silicon oxide to which carbon and nitrogen are added, silicon oxide having a void, resin, or the like. In particular, silicon oxide and silicon oxynitride are preferable because they have thermal stability. In particular, silicon oxide and silicon oxide having pores are preferable because an excess oxygen region is easily formed in a subsequent step.

Insulator 580 preferably has a region of excess oxygen. When the insulator 580 that releases oxygen by heating is provided in contact with the oxide 530c, oxygen in the insulator 580 can be efficiently supplied to the oxide 530a and the oxide 530b through the oxide 530 c. In addition, it is preferable to reduce the concentration of impurities such as water and hydrogen in the insulator 580.

The opening of the insulator 580 is formed so as to overlap with a region between the conductive body 542a and the conductive body 542 b. Thus, the conductor 560 is buried in the opening of the insulator 580 and in the region sandwiched between the conductors 542a and 542 b.

In the miniaturization of a semiconductor device, it is necessary to shorten the gate length, but it is necessary to prevent the decrease in the conductivity of the conductor 560. Therefore, when the thickness of the conductor 560 is increased, the conductor 560 may have a shape with a high aspect ratio. In the present embodiment, since the conductor 560 is buried in the opening of the insulator 580, the conductor 560 can be formed without collapsing the conductor 560 in the process even if the conductor 560 has a shape with a high aspect ratio.

The insulator 574 is preferably disposed in contact with the top surface of the insulator 580, the top surface of the conductor 560, and the top surface of the insulator 550. When the insulator 574 is formed by a sputtering method, an excess oxygen region can be formed in the insulator 550 and the insulator 580. Thereby, oxygen can be supplied from the excess oxygen region into the oxide 530.

For example, as the insulator 574, a metal oxide containing one or two or more kinds selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium, and the like can be used.

In particular, alumina has high barrier properties, and even a thin aluminum oxide film of 0.5nm or more and 3.0nm or less can suppress diffusion of hydrogen and nitrogen. Thus, alumina formed by the sputtering method can be used as an oxygen supply source and also as a barrier film for impurities such as hydrogen.

Further, an insulator 581 used as an interlayer film is preferably provided over the insulator 574. Similarly to the insulator 524 or the like, it is preferable to reduce the concentration of impurities such as water and hydrogen in the insulator 581.

In addition, the conductors 540a and 540b are disposed in openings formed in the insulators 581, 574, 580, and 544. The conductors 540a and 540b are provided so as to face each other with the conductor 560 interposed therebetween.

By adopting this structure, miniaturization or high integration of a semiconductor device including a transistor including an oxide semiconductor can be achieved.

< example of configuration of electronic apparatus capable of Using display Module >

Next, an example of an electronic device that can use the display module 401 will be described with reference to fig. 26.

The display module 401 can be mounted on a display unit of a TV apparatus (television receiving apparatus) 7000, a smart watch 7010, a smart phone 7020, a digital camera 7030, a glasses-type information terminal 7040, a notebook-type Personal Computer (PC)7050, a PC7060, a game machine 7070, and the like.

By using the display module 401 for the display portions of the TV device 7000, the smart watch 7010, the smartphone 7020, the digital camera 7030, the glasses-type information terminal 7040, the notebook-type PC7050, the PC7060, the game machine 7070, and the like, a high-definition image can be displayed. The user can see a realistic image.

This embodiment can be implemented in appropriate combination with any of the structures described in the other embodiments and the like.

[ examples ]

In this example, a light-emitting device using one embodiment of the present invention was manufactured and the reliability test results thereof are explained. Note that the light-emitting device of the present embodiment has the structure shown in fig. 2A.

In this example, four devices, i.e., a device 1, a device 2, a device 3, and a device 4, were manufactured as a light-emitting device using one embodiment of the present invention. All four devices emit blue light.

In addition, in the present embodiment, eight devices, that is, the device 11, the device 12, the device 13, the device 14, the device 15, the device 16, the device 17, and the device 18 are used as the light emitting devices for comparison. The eight devices all emit blue light.

Fig. 27 shows the reliability test results of the device 11 and the device 12 as comparison light-emitting devices. In fig. 27, the vertical axis represents normalized luminance when the initial luminance is 100%, and the horizontal axis represents the driving time of the device.

The same stress conditions are used for the driving of device 11 and device 12. The converted stress luminance is calculated from the equation of initial luminance divided by transmittance divided by aperture ratio of the circular polarizing plate. The transmittance of the circularly polarizing plate is assumed to be about 40%. The aperture ratio of each of the devices 11 and 12 is about 4.87%. The reduced stress luminance of each of the devices 11 and 12 was about 2300cd/m²。

The chromaticity (x, y) of each of the devices 11 and 12 is (0.145 to 0.146, 0.045 to 0.047).

Fig. 27 shows that LT95 (the time it takes for the luminance to fall to 95% of the initial luminance) of device 11 was 242 hours and LT95 of device 12 was 106 hours.

Fig. 28 shows reliability test results of the devices 1 and 2 using the light-emitting device of one embodiment of the present invention and the devices 13 to 16 using the light-emitting devices for comparison. In fig. 28, the vertical axis represents the normalized luminance when the initial luminance is 100%, and the horizontal axis represents the driving time of the device.

The same stress conditions are used for the driving of device 1, device 2, device 13 to device 16. The reduced stress luminance for each of the six devices was about 1300cd/m, respectively². In addition, the transmittance of the circularly polarizing plate is assumed to be 40%. The aperture ratio of each of the devices 13 to 16 is about 7.29%.

The chromaticity (x, y) of each of the devices 13 to 16 is (0.142 to 0.144, 0.047 to 0.051).

Fig. 28 shows that LT95 of each of device 1 and device 2 using one embodiment of the present invention is 400 hours or longer. In addition, as is clear from fig. 28, LT95 of device 13 was 17 hours, LT95 of device 14 was 55 hours, LT95 of device 15 was 103 hours, and LT95 of device 16 was 62 hours.

Fig. 29 shows the reliability test results of the devices 3 and 4 using the embodiment of the present invention and the devices 17 and 18 using the comparative light-emitting device. In fig. 29, the vertical axis represents the normalized luminance when the initial luminance is 100%, and the horizontal axis represents the driving time of the device.

The same stress conditions are used for the driving of device 3, device 4, device 17 and device 18. The reduced stress luminance for each of the four devices was approximately 1450cd/m². In addition, the transmittance of the circularly polarizing plate is assumed to be 40%. The aperture ratio of each of the devices 17 and 18 is about 6.78%.

The chromaticity (x, y) of each of the devices 17 and 18 was (0.140 to 0.141, 0.055 to 0.057).

As is clear from fig. 29, LT95 for each of device 3 and device 4 according to the embodiment of the present invention is 400 hours or longer. As can be seen from fig. 29, LT95 of device 17 was 67 hours, and LT95 of device 18 was 92 hours.

As is clear from the above, LT95 using the light-emitting device according to one embodiment of the present invention is 400 hours or longer. As is clear from the results of the present example, the light-emitting device using one embodiment of the present invention has an extremely long life as compared with the light-emitting device for comparison.

Description of the symbols

100: substrate, 101: electrode, 102: electrode, 103: EL layer, 111: hole injection layer, 112: hole transport layer, 112-1: hole transport layer, 112-2: hole transport layer, 113: light-emitting layer, 113-1: light-emitting layer, 113-2: light-emitting layer, 114: electron transport layer, 115: electron injection layer, 116: charge generation layer, 117: p-type layer, 118: electron relay layer, 119: electron injection buffer layer, 120: light-emitting region, 121: non-light emitting recombination region, 151: electrode, 152: electrode, 161: light-emitting unit, 162: light-emitting unit, 163: charge generation layer, 200: insulator, 201: electrode, 201B: electrode, 201G: electrode, 201R: electrode, 202: EL layer, 203: electrode, 204: protective layer, 205: color conversion layer, 205B: structure, 205G: color conversion layer, 205R: color conversion layer, 206: black matrix, 207: light-emitting device, 207B: light-emitting device, 207G: light-emitting device, 207R: light-emitting device, 208: pixel, 208B: pixel, 208G: pixel, 208R: pixel, 209: optical distance, 210G: means, 215B: layer, 225B: color filter, 225G: color filter, 225R: color filter, 400: semiconductor device, 401: display module, 402: display control unit, 403: power supply unit, 404: operation unit, 405: speaker, 406: external input-output terminal, 407: fixing band, 408: lens, 411: display device, 412: FPC, 421: substrate, 422: substrate, 431: display unit, 441: circuit portion, 442: pixel circuit section, 442 a: pixel circuit, 443: pixel portion, 443 a: pixel, 444: terminal portion, 445: wiring portion, 500: transistor, 503: conductor, 503 a: conductor, 503 b: electrical conductor, 512: insulator, 514: insulator, 516: insulator, 520: insulator, 522: insulator, 524: insulator, 530: oxide, 530 a: oxide, 530 b: oxide, 530 c: oxide, 540 a: electrical conductor, 540 b: conductor, 542: conductor, 542 a: conductor, 542 b: conductor, 543 a: region, 543 b: region, 544: insulator, 550: insulator, 560: electrical conductor, 560 a: electrical conductor, 560 b: electrical conductor, 574: insulator, 580: insulator, 581: insulator, 601: source line driver circuit, 602: pixel portion, 603: gate line driving circuit, 604: sealing substrate, 605: sealing material, 607: space, 608: wiring, 610: element substrate, 611: FET for switching, 612: current control FET, 613: anode, 614: insulator, 616: EL layer, 617: cathode, 618: light emitting device, 623: FET, 1001: substrate, 1002: base insulating film, 1003: gate insulating film, 1006: gate electrode, 1007: gate electrode, 1008: gate electrode, 1020: interlayer insulating film, 1021: interlayer insulating film, 1022: electrode, 1024B: electrode, 1024G: electrode, 1024R: electrode, 1025: partition wall, 1028: EL layer, 1029: electrode, 1031: sealing substrate, 1032: sealing material, 1033: substrate, 1034G: translation layer, 1034R: color conversion layer, 1035: black matrix, 1036: outer coating, 1037: interlayer insulating film, 1040: pixel portion, 1041: driver circuit portion, 1042: peripheral portion, 1201: electrode, 1202: electrode, 1210: layer, 1211: layer, 1212: layer, 2100: robot, 2101: illuminance sensor, 2102: microphone, 2103: upper camera, 2104: speaker, 2105: display, 2106: lower camera, 2107: obstacle sensor, 2108: moving mechanism, 2110: arithmetic device, 5000: shell, 5001: display portion, 5002: display portion, 5003: speaker, 5004: LED lamp, 5005: operation keys, 5006: connection terminal, 5007: sensor, 5008: microphone, 5012: support, 5013: earphone, 5100: sweeping robot, 5101: display, 5102: camera, 5103: brush, 5104: operation button, 5120: brush, 5140: portable electronic device, 5150: portable information terminal, 5151: outer shell, 5152: display area, 5153: bend, 5200: display area, 5201: display area, 5202: display area, 5203: display area, 7000: TV apparatus, 7010: smart watch, 7020: smart phone, 7030: digital camera, 7040: glasses type information terminal, 7060: PC, 7070: gaming machine, 7101: housing, 7103: display unit, 7105: support, 7107: display unit, 7109: operation keys, 7110: remote controller, 7201: main body, 7202: housing, 7203: display unit, 7204: keyboard, 7205: external connection port, 7206: pointing device, 7210: display portion, 7401: outer shell, 7402: display portion, 7403: operation buttons, 7404: external connection port, 7405: speaker, 7406: microphone, 9310: portable information terminal, 9311: display panel, 9312: display region, 9313: hinge, 9315: outer casing

The present application is based on Japanese patent application No. 2019-once 020055, filed on 6.2.2019, and Japanese patent application No. 2019-once 028345, filed on 20.2.2019, filed on the Japanese patent office, the entire contents of which are incorporated herein by reference.