阅读说明：本技术 一种新型带通滤波器 (Novel band-pass filter ) 是由 代传相 李小珍 刘永红 邢孟江 于 2020-06-09 设计创作，主要内容包括：本发明涉及一种新型带通滤波器,属于滤波器技术领域。本发明包括从上至下依次的电路结构层、基体层和等效大地层,电路结构层上形成有滤波器电路结构,并设有输入端口、输出端口和多个接地端口,滤波器电路结构包括连接在输入端口和输出端口之间的多个串联谐振器和串并联谐振器,多个谐振器的共同作用下实现了高带外抑制的效果,第六谐振器作为滤波器的零点电路,在满足谐振条件下,电感L6主要控制高频零点,电容C6主要控制低频零点；在满足谐振条件下,调节电容Cb3、电容Cb4、电容Cb5可以在低频端引入新的零点；实际模型中接地端存在寄生电感,通过合理的布局利用寄生电感引入远端抑制零点。(The invention relates to a novel band-pass filter, and belongs to the technical field of filters. The filter circuit structure comprises a circuit structure layer, a substrate layer and an equivalent large ground layer which are arranged from top to bottom in sequence, wherein a filter circuit structure is formed on the circuit structure layer and is provided with an input port, an output port and a plurality of grounding ports, the filter circuit structure comprises a plurality of series resonators and series-parallel resonators connected between the input port and the output port, the effect of high out-of-band rejection is realized under the combined action of the resonators, a sixth resonator is used as a zero point circuit of the filter, an inductor L6 mainly controls a high-frequency zero point and a capacitor C6 mainly controls a low-frequency zero point under the condition of meeting resonance; under the condition that the resonance condition is met, the adjusting capacitor Cb3, the capacitor Cb4 and the capacitor Cb5 can introduce new zero points at the low-frequency end; parasitic inductance exists in the grounding end of the practical model, and the parasitic inductance is used for introducing a far-end suppression zero point through reasonable layout.)

1. The utility model provides a novel band-pass filter, its characterized in that includes from last circuit structure layer (4), base member layer (3) and the big ground layer (2) of equivalence down in proper order, be formed with filter circuit structure on circuit structure layer (4) to be equipped with input port, output port and a plurality of ground connection port, filter circuit structure include first syntonizer and the second syntonizer of series connection between input port and output port, be connected with the third syntonizer of ground connection between input port and the first syntonizer, be connected with the fifth cluster syntonizer of ground connection between output port and the second syntonizer.

2. The novel band pass filter of claim 1, wherein: a sixth resonator is connected between the first resonator and the second resonator, and the first resonator, the second resonator and the sixth resonator are LC series resonance units; the third resonator and the fifth resonator are LC series-parallel resonance units and are formed by connecting an inductor with a first capacitor in series and then connecting the inductor with a second capacitor in parallel.

3. The novel band pass filter of claim 2, wherein: the sixth resonator is connected with a grounded fourth resonator which is an LC series-parallel resonance unit and is formed by connecting an inductor with a first capacitor in series and then connecting the inductor with a second capacitor in parallel.

4. The novel band pass filter of claim 1, wherein: the first series resonator and the second series resonator are of symmetrical structures, and the inductance value and the capacitance value of the two resonators are respectively equal.

5. The novel band pass filter of claim 1, wherein: the third series-parallel resonator and the fifth resonator are of symmetrical structures, and the inductance value and the capacitance value of the two resonators are equal respectively.

6. The novel band pass filter of claim 1, wherein: the number of the grounding ports is 4, two of the grounding ports and the input port form a GSG coplanar port (2), and the two grounding ports and the output port form the GSG coplanar port (2).

7. The novel band pass filter of claim 1, wherein: the grounding port is connected with the equivalent large ground layer (2) through a through hole.

8. The novel band pass filter of claim 1, wherein: the equivalent large ground layer (2) is a metal conductor layer formed on the lower surface of the base layer (3) (1) through electroplating.

9. The novel band pass filter of claim 1, wherein: the substrate layers (3) and (1) are made of semiconductor materials such as gallium arsenide, silicon nitride or silicon.

Technical Field

The invention relates to a novel band-pass filter, and belongs to the technical field of filters.

Background

With the rapid development of mobile communication, the radio frequency filter of the mobile phone grows explosively. In the rf front-end module, the rf filter plays a crucial role. It can filter out-of-band interference and noise to meet the signal-to-noise ratio requirements of radio frequency systems and communication protocols. As communication protocols become more complex, the requirements for communication protocols are becoming higher and higher inside and outside the frequency band, which makes the design of filters more and more challenging. In addition, as the number of frequency bands that a mobile phone needs to support increases, the number of filters that need to be used in a mobile phone also increases because each frequency band needs to have its own filter.

While the 4G network is developing at a high speed, 5G technology has been intensively deployed in huge heads of various communication devices, SAW filters are mainly used in past 4G era, and although the SAW filters are low in cost and exquisite in process, the SAW filters cannot meet the requirements of 5G transmission. 5G requires a large number of integrated electronic components, so that the filter size needs to be smaller and convenient to integrate, and therefore a filter with small volume, stable frequency and low loss is needed.

Disclosure of Invention

The invention aims to overcome the defects of the existing filter and provides a novel band-pass filter which comprises a circuit structure layer, a substrate layer and an equivalent large ground layer and is combined with a semiconductor process to realize the effects of miniaturization and convenient integration.

The invention is realized by adopting the following technical scheme:

the utility model provides a novel band-pass filter, includes from last circuit structure layer, base member layer and the big stratum of equivalence down in proper order, is formed with filter circuit structure on the circuit structure layer to be equipped with input port, output port and a plurality of ground connection port.

Further, the filter circuit structure includes a first resonator and a second resonator connected in series between the input port and the output port, a grounded third resonator connected between the input port and the first resonator, and a grounded fifth resonator connected between the output port and the second resonator.

Furthermore, a sixth resonator is connected between the first resonator and the second resonator, and the first resonator, the second resonator and the sixth resonator are LC series resonance units; the third resonator and the fifth resonator are LC series-parallel resonance units and are formed by connecting an inductor with a first capacitor in series and then connecting the inductor with a second capacitor in parallel.

Furthermore, the sixth resonator is connected with a grounded fourth resonator, and the fourth resonator is an LC series-parallel resonance unit and is formed by connecting an inductor in series with a first capacitor and then connecting the inductor in parallel with a second capacitor.

Further, the first series resonator and the second series resonator are symmetrical structures, and inductance values and capacitance values of the two resonators are respectively equal.

Further, the third series-parallel resonator and the fifth resonator are of symmetrical structures, and inductance values and capacitance values of the two resonators are equal respectively.

Furthermore, there are 4 ground ports, two of which form a GSG coplanar port with the input port and two of which form a GSG coplanar port with the output port.

Further, the ground port is connected to an equivalent ground plane through a via.

Further, the equivalent ground layer is a metal conductor layer formed on the lower surface of the base layer through electroplating.

Further, the substrate layer is made of semiconductor materials such as gallium arsenide, silicon nitride or silicon.

The invention has the beneficial effects that:

the GSG port is adopted, so that the microwave oven is convenient to integrate with other microwave assemblies; the effect of high out-of-band rejection is achieved under the combined action of the resonators, the sixth resonator is used as a zero circuit of the filter, the inductor L6 mainly controls a high-frequency zero point and the capacitor C6 mainly controls a low-frequency zero point under the condition that resonance conditions are met; the third resonator, the fourth resonator and the fifth resonator are equivalent to an inductor capacitor to be connected in series, and under the condition that resonance conditions are met, new zero points can be introduced at the low-frequency end by adjusting the capacitor Cb3, the capacitor Cb4 and the capacitor Cb 5; parasitic inductance exists in the grounding end of the practical model, and the parasitic inductance is used for introducing a far-end suppression zero point through reasonable layout.

Drawings

FIG. 1 is a schematic circuit diagram of a filter according to the present invention;

FIG. 2 is a schematic diagram of a planar structure of a filter according to the present invention;

FIG. 3 is a schematic diagram of a three-dimensional structure of a filter according to the present invention;

FIG. 4 is a diagram illustrating simulation results of the filter of the present invention.

Description of reference numerals:

1 backing a gold big ground; 2GSG coplanar port; 3 a substrate layer; 4 circuit structure layers.

Detailed Description

The invention will be further explained with reference to the drawings.

As shown in fig. 3, the band-pass filter of the present invention includes a circuit structure layer 4, a substrate layer 3 and a back metal layer 2 in sequence from top to bottom, a filter circuit structure is formed on the circuit structure layer 4, and is provided with an input port, an output port and a ground port, the ground port is provided with 4, two and the input port form a GSG coplanar port 22, two and the output port form a GSG coplanar port 2, the filter packaging structure of the present embodiment is 1.0mm × 0.8mm × 0.1 mm.

As shown in fig. 1, the filter circuit structure of this embodiment includes a first resonator, a second resonator, a third resonator, a fourth resonator, a fifth resonator, and a sixth resonator. The first resonator is a series resonator of an inductor L1 and a capacitor C1; the second resonator is a series resonator of an inductor L2 and a capacitor C2; the third resonator is a series-parallel resonator which is formed by connecting an inductor L3 and a capacitor Cb3 in series and then connecting the inductor L3 and the capacitor Cb 3652 in parallel; the fourth resonator is a series-parallel resonator which is formed by connecting an inductor L4 and a capacitor Cb4 in series and then connecting the inductor L4 and the capacitor Cb 3652 in parallel; the fifth resonator is a series-parallel resonator which is formed by connecting an inductor L5 and a capacitor Cb5 in series and then connecting the inductor L5 and the capacitor Cb 3652 in parallel; the sixth resonator is an inductor L6 and capacitor C6 series resonator. The connection mode of the circuit is as follows: the input end is connected with a first resonator (an inductor L1 and a capacitor C1), the first resonator is connected with a second resonator (an inductor L2 and a capacitor C2), and the second resonator is connected with the output end; one end of the third resonator (the inductor L3, the capacitor C3 and the capacitor Cb3) is connected between the input end and the first resonator, and the other end of the third resonator is grounded; one end of a sixth resonator (an inductor L6 and a capacitor C6) is connected between the first resonator and the second resonator, the other end of the sixth resonator is connected with a fourth resonator (an inductor L4, a capacitor C4 and a capacitor Cb4), and the other end of the fourth resonator is grounded; one end of the fifth resonator (the inductor L5, the capacitor C5 and the capacitor Cb5) is connected between the second resonator and the output end, and the other end is grounded.

As shown in fig. 2, in the filter circuit structure of this embodiment, a GSG coplanar port 2 is used as an input/output port of the filter, and the input terminal is connected to a capacitor C1, a capacitor C1 is connected to an inductor L1, an inductor L1 is connected to an inductor L2, an inductor L2 is connected to a capacitor C2, and a capacitor C2 is connected to an output terminal; a first series parallel resonance (an inductor L3, a capacitor C3 and a capacitor Cb3) is connected between the capacitor C1 and an input end, the other end of the first series parallel resonance is connected with a V2, and the first series parallel resonance is connected with a back gold large ground 1 through a V2 to form a grounding end; a capacitor C6 is connected between the inductor L1 and the inductor L2, the other end of the capacitor C6 is connected with the inductor L6, the other end of the inductor L6 is connected with a second series-parallel resonance (an inductor L4, a capacitor C4 and a capacitor Cb4), the other end of the second series-parallel resonance is connected with a capacitor V5, and the capacitor V5 is connected with the back gold large ground 1 to form a ground end; a third series-parallel resonance (an inductor L5, a capacitor C5 and a capacitor Cb5) is connected between the capacitor C2 and the output end, the other end of the third series-parallel resonance is connected with a capacitor V4, and the third series-parallel resonance is connected with the back gold large ground 1 through a capacitor V4 to form a ground end; wherein G1, G2, G3 and G4 are connected with the back golden ground 1 through connecting through holes V1, V2, V3 and V4.

As shown in fig. 4, the center frequency of the novel band-pass filter of the present invention is 3.85GHz, the passband bandwidth is 3.1GHz to 4.6GHz, and the insertion loss in the passband is less than 2.0 dB; in the resistance band, the inhibition is more than 30dB in the range of DC-2.6 GHz and more than 30dB in the range of 5.3-10 GHz.

The novel band-pass filter provided by the invention has the advantages of simple design structure, high performance, realization based on a semiconductor process, small size, high process precision and suitability for batch production.

The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.