阅读说明：本技术 具有改进的保质期的可用作硬掩膜和填充材料的含无机氧化物组分和炔氧基取代的旋涂碳组分的旋涂组合物 (Spin-on compositions containing inorganic oxide components and alkynoxy-substituted spin-on carbon components useful as hardmask and fill materials with improved shelf life ) 是由 M·D·拉赫曼 T·赛吉托 于 2020-02-20 设计创作，主要内容包括：本发明涉及组合物,其包含：组分a)、b)和d)；其中,组分a)是具有结构(I)的金属化合物,组分b)是旋涂高碳聚合物,其具有包含单环芳烃、稠环环烃部分或它们的混合的聚合物主链,具有约81wt％至约94wt％的碳的wt％,在旋涂溶剂中可溶解至至少约5wt％,并且其中存在于所述旋涂高碳聚合物中的所述单环芳烃部分或所述稠环环烃部分中的至少一个被至少一个结构(VIII)的炔氧基部分所官能化,并且组分d)是旋涂溶剂。本发明进一步涉及在制造电子器件的方法中使用这样的组合物,所述方法通过在半导体基底上形成包含金属氧化物的高K材料的图案化膜,或通过形成覆盖在半导体基底上的包含金属氧化物的图案化层,所述组合物可以用于用氟等离子体选择性地蚀刻半导体基底。(The present invention relates to a composition comprising: components a), b) and d); wherein component a) is a metal compound having structure (I) and component b) is a spin-on high carbon polymer having a polymer comprising a monocyclic aromatic hydrocarbon, fused ring cyclic hydrocarbon moiety, or mixtures thereofA backbone having a wt% of carbon of from about 81 wt% to about 94 wt%, soluble in a spin-on solvent to at least about 5 wt%, and wherein at least one of said mono-aromatic hydrocarbon moiety or said fused ring cyclic hydrocarbon moiety present in said spin-on high carbon polymer is functionalized with at least one acetylenic oxy moiety of structure (VIII), and component d) is a spin-on solvent. The invention further relates to the use of such compositions in a method of manufacturing an electronic device by forming a patterned film of a high-K material comprising a metal oxide on a semiconductor substrate, or by forming a patterned layer comprising a metal oxide overlying a semiconductor substrate, which composition can be used to selectively etch a semiconductor substrate with a fluorine plasma.)