阅读说明：本技术 一种基于磁致伸缩效应的半导体磁场探测器 (Semiconductor magnetic field detector based on magnetostrictive effect ) 是由 不公告发明人 于 2020-05-21 设计创作，主要内容包括：本发明提供了一种基于磁致伸缩效应的半导体磁场探测器,在衬底的凹槽内设置磁致伸缩材料层和压电材料层,凹槽上、衬底上设置半导体层,半导体层上设置源极和漏极。探测磁场时,在磁场作用下,磁致伸缩材料层膨胀导致压电材料层被压缩,在压电材料层上出现电荷,从而改变半导体层中载流子的浓度,引起源极和漏极间的电信号变化,通过测试该电信号的变化实现磁场的探测。由于本发明中,源极和漏极之间的电信号对载流子浓度非常灵敏,所以本发明具有灵敏度高的优点。另外,可以选择不同的磁致伸缩材料以实现不同程度的膨胀,所以本发明具有量程宽的优点。(The invention provides a semiconductor magnetic field detector based on a magnetostrictive effect. When a magnetic field is detected, under the action of the magnetic field, the magnetostrictive material layer expands to cause the piezoelectric material layer to be compressed, and electric charges appear on the piezoelectric material layer, so that the concentration of current carriers in the semiconductor layer is changed, the electric signal change between the source electrode and the drain electrode is caused, and the detection of the magnetic field is realized by testing the change of the electric signal. In the invention, the electric signal between the source electrode and the drain electrode is very sensitive to the carrier concentration, so the invention has the advantage of high sensitivity. In addition, different magnetostrictive materials can be selected to achieve different degrees of expansion, so the invention has the advantage of wide range.)

1. A semiconductor magnetic field sensor based on the magnetostrictive effect, comprising: the device comprises a substrate, a groove, a magnetostrictive material layer, a piezoelectric material layer, a semiconductor layer, a source electrode and a drain electrode; the substrate is provided with the groove, the magnetostrictive material layer is arranged at the bottom of the groove, the piezoelectric material layer is arranged on the magnetostrictive material layer, the upper surface of the piezoelectric material layer is a plane, the piezoelectric material layer is not lower than the surface of the substrate, the semiconductor layer covers the groove, the source electrode and the drain electrode are arranged on the semiconductor layer, and the source electrode and the drain electrode are arranged on two sides of the groove; when a magnetic field is detected, the magnetic field acts on the magnetostrictive material layer, the piezoelectric material layer is compressed due to expansion of the magnetostrictive material layer, electric charges appear on the piezoelectric material layer, accordingly, an electric signal between the source electrode and the drain electrode is changed, and detection of the magnetic field is achieved through testing of the electric signal.

2. A semiconductor magnetic field sensor based on the magnetostrictive effect according to claim 1, characterized in that: the magnetostrictive material layer is made of nickel alloy, iron-based alloy and ferrite material.

3. A semiconductor magnetic field sensor based on the magnetostrictive effect according to claim 2, characterized in that: the piezoelectric material layer is lead zirconate titanate or polyvinylidene fluoride.

4. A semiconductor magnetic field sensor based on the magnetostrictive effect according to claim 3, characterized in that: the source electrode is aluminum or gold, and the drain electrode is aluminum or gold.

5. The semiconductor magnetic field detector based on the magnetostrictive effect according to claim 4, characterized in that: the semiconductor layer is a silicon substrate containing gallium nitride and aluminum gallium nitride epitaxial layers.

6. The semiconductor magnetic field detector based on the magnetostrictive effect according to any one of claims 1-5, characterized in that: the magnetostrictive material layer has a protrusion in the middle.

7. The semiconductor magnetic field detector based on the magnetostrictive effect according to claim 6, characterized in that: and a noble metal block is arranged on the semiconductor layer and in the middle of the groove.

8. A semiconductor magnetic field sensor based on the magnetostrictive effect according to claim 7, characterized in that: the noble metal block is gold.

9. A semiconductor magnetic field sensor based on the magnetostrictive effect according to claim 8, characterized in that: the width of the noble metal block is greater than the width of the groove.

10. A semiconductor magnetic field sensor based on the magnetostrictive effect according to claim 9, characterized in that: and a heavy object is also arranged on the metal block.

Technical Field

The invention relates to the field of magnetic field detection, in particular to a semiconductor magnetic field detector based on a magnetostrictive effect.

Background

Magnetic field detectors play an increasingly important role in various aspects of human social life. With the development of the technology, the requirement of the human on the magnetic field detection technology is higher and higher. Conventional magnetic field detectors are based primarily on the hall effect, the magnetoresistive effect, the flux gate effect and the tunnel effect. The sensors have difficulty in solving the contradiction between measuring range and measuring precision

Chinese patent application 201711455904.3, "a semiconductor magnetic sensor, a method for manufacturing the same, and a method for using the same," proposes a field effect transistor structure, in which a gate includes a first gate having a piezoelectric effect connected to a semiconductor substrate and a second gate having a magnetostrictive effect connected to the first gate. When the magnetostrictive piezoelectric material works, an external magnetic field acts on the magnetostrictive material, so that the pressure of the magnetostrictive material on the piezoelectric material cannot be greatly changed, and only the magnetostrictive material is arranged on the first grid, and no matter how the first grid and the second grid act, only the gravity of the second grid acts on the first grid, so that the magnetic field detection sensitivity is low.

Disclosure of Invention

In order to solve the above problems, the present invention provides a semiconductor magnetic field detector based on the magnetostrictive effect, which includes a substrate, a groove, a magnetostrictive material layer, a piezoelectric material layer, a semiconductor layer, a source electrode, and a drain electrode. The substrate is provided with a groove, and the magnetostrictive material layer is arranged at the bottom of the groove. The piezoelectric material layer is arranged on the magnetostrictive material layer, and the upper surface of the piezoelectric material layer is a plane. The piezoelectric material layer is not lower than the surface of the substrate. The semiconductor layer covers the groove. The source and drain electrodes are disposed on the semiconductor layer, and the source and drain electrodes are disposed at both sides of the groove. When a magnetic field is detected, the magnetic field acts on the magnetostrictive material layer, the piezoelectric material layer is compressed due to expansion of the magnetostrictive material layer, electric charges appear on the piezoelectric material layer, accordingly, an electric signal between the source electrode and the drain electrode is changed, and detection of the magnetic field is achieved through testing of the electric signal.

Furthermore, the magnetostrictive material layer is made of nickel alloy, iron-based alloy and ferrite material.

Further, the piezoelectric material layer is lead zirconate titanate or polyvinylidene fluoride.

Further, the source electrode is aluminum or gold, and the drain electrode is aluminum or gold.

Further, the semiconductor layer is a silicon substrate containing an epitaxial layer of gallium nitride and aluminum gallium nitride.

Further, the magnetostrictive material layer has a protrusion in the middle.

Furthermore, a noble metal block is arranged on the semiconductor layer and in the middle of the groove.

Further, the noble metal block is gold.

Further, the noble-metal block has a width larger than that of the groove.

Furthermore, a weight is arranged on the metal block.

The invention has the beneficial effects that: the invention provides a semiconductor magnetic field detector based on a magnetostrictive effect. When a magnetic field is detected, under the action of the magnetic field, the magnetostrictive material layer expands to cause the piezoelectric material layer to be compressed, and electric charges appear on the piezoelectric material layer, so that the concentration of current carriers in the semiconductor layer is changed, the electric signal change between the source electrode and the drain electrode is caused, and the detection of the magnetic field is realized by testing the change of the electric signal. In the invention, the electric signal between the source electrode and the drain electrode is very sensitive to the carrier concentration, so the invention has the advantage of high sensitivity. In addition, different magnetostrictive materials can be selected to achieve different degrees of expansion, so the invention has the advantage of wide range.

The present invention will be described in further detail below with reference to the accompanying drawings.

Drawings

Fig. 1 is a schematic view of a semiconductor magnetic field detector based on the magnetostrictive effect.

Fig. 2 is a schematic diagram of another semiconductor magnetic field detector based on the magnetostrictive effect.

Fig. 3 is a schematic diagram of yet another semiconductor magnetic field detector based on the magnetostrictive effect.

In the figure: 1. a substrate; 2. a groove; 3. a layer of magnetostrictive material; 4. a layer of piezoelectric material; 5. a semiconductor layer 6, a source electrode; 7. a drain electrode; 8. a noble metal block.

Detailed Description

To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.