阅读说明：本技术 一种功率器件驱动电路和逆变电路 (Power device drive circuit and inverter circuit ) 是由 杨永江 于 2020-06-11 设计创作，主要内容包括：本发明涉及半导体技术领域,尤其是涉及一种功率器件的驱动电路和逆变电路。本发明具有以小的恢复电流并联SiC二极管,能够在不增加MHz频带噪声的情况下显著降低导通损耗和恢复损耗,有助于降低逆变器的损耗和噪声。本发明提供了一种功率半导体器件的开关电路和逆变电路,该功率半导体器件包括硅IGBT及其IGBT与SiC二极管组合的模块,其中,栅极上的电阻设置为小于栅极下的电阻。(The invention relates to the technical field of semiconductors, in particular to a driving circuit and an inverter circuit of a power device. The invention has the advantages that the SiC diodes are connected in parallel with small recovery current, the conduction loss and the recovery loss can be obviously reduced under the condition of not increasing the MHz frequency band noise, and the loss and the noise of the inverter can be reduced. The invention provides a switching circuit and an inverter circuit of a power semiconductor device including a silicon IGBT and a module in which the IGBT and the SiC diode are combined, wherein a resistance on a gate is set to be smaller than a resistance under the gate.)

1. A power device driving circuit, comprising: a power semiconductor switching device and a freewheeling diode with a small reverse recovery current, wherein the resistance on the gate of the power semiconductor switching device is set smaller than its resistance under the gate.

2. The power device driving circuit according to claim 1, comprising:

l for line inductance of power semiconductor device and gate drive circuit_gWhen expressed, R is used as the buried resistance of the power semiconductor device_ginThe input capacitance of the power semiconductor device is represented by C_iesThe on-resistance of the power semiconductor switching device is represented by R_gonIt is shown that the on-resistance satisfies the following condition:

3. the power device driving circuit according to claim 1, wherein a capacitor thereof is provided in parallel with a gate resistance of the power semiconductor switching device as a means for realizing high-speed driving.

4. The power device driving circuit according to claim 1, wherein the freewheel diode having a small reverse recovery current comprises a schottky barrier diode of a wide bandgap semiconductor.

5. The power device driving circuit according to claim 1, wherein the freewheel diode with small reverse recovery current comprises a PiN diode of a wide bandgap semiconductor.

6. The power device driving circuit according to claim 4 or 5, wherein the wide bandgap semiconductor comprises: SiC and GaN.

7. A power device inverter circuit is characterized by comprising a power semiconductor switching device, a self-rotation diode with small reverse recovery current and a power semiconductor module; the power semiconductor module has a power switching device and a free-wheeling diode, and a gate drive circuit of the power semiconductor switching device, wherein a first high-voltage-side terminal of the power semiconductor switching device of the power semiconductor module and a second high-voltage-side terminal of a Schottky barrier diode of a wide bandgap semiconductor are independently arranged, and an inductance is provided between the first high-voltage-side terminal and the second high-voltage-side terminal.

8. The power device inverter circuit according to claim 7, wherein the freewheeling diode having a small reverse recovery current comprises a schottky barrier diode of a wide bandgap semiconductor.

9. The power device inverter circuit of claim 7, wherein the freewheeling diode having a small reverse recovery current comprises a PiN diode of a wide bandgap semiconductor.

10. The power device inverter circuit according to claim 7,

the gate driving speed of the power semiconductor module is connected in parallel with a free-wheeling diode having a small reverse recovery current.

Technical Field

The invention relates to the technical field of semiconductors, in particular to a driving circuit and an inverter circuit of a power device. Including a power semiconductor switching device connected in parallel with a spinning diode having a small reverse recovery current, such as a schottky barrier diode of a wide bandgap semiconductor (e.g., SiC and GaN) or a PiN diode of a wide bandgap semiconductor, and an inverter circuit including the spinning diode.

Background

Disclosure of Invention

The present invention aims to provide a drive circuit for a semiconductor device using a schottky barrier diode (such as silicon carbide (SiC) and gallium nitride (GaN)) which is a novel wide band gap semiconductor used in place of Si to drive a gate at high speed.

The power device driving circuit includes: a power semiconductor switching device and a freewheeling diode with a small reverse recovery current, wherein the resistance on the gate of the power semiconductor switching device is set smaller than its resistance under the gate.

As a further technical scheme, the method comprises the following steps:

l for line inductance of power semiconductor device and gate drive circuit_gWhen expressed, R is used as the buried resistance of the power semiconductor device_ginThe input capacitance of the power semiconductor device is represented by C_iesThe on-resistance of the power semiconductor switching device is represented by R_gonIt is shown that the on-resistance satisfies the following condition:

as a further technical solution, a capacitor is provided in parallel with a gate resistance of the power semiconductor switching device as a means for realizing high-speed driving.

As a further aspect, the freewheel diode with a small reverse recovery current includes a schottky barrier diode of a wide bandgap semiconductor.

As a further technical solution, the free-wheeling diode with small reverse recovery current includes a PiN diode of a wide bandgap semiconductor.

As a further aspect, the wide bandgap semiconductor includes: SiC and GaN.

The invention provides a power device inverter circuit, which comprises a power semiconductor switching device, a self-rotation diode with small reverse recovery current and a power semiconductor module, wherein the self-rotation diode is connected with the power semiconductor switching device; the power semiconductor module has a power switching device and a free-wheeling diode, and a gate drive circuit of the power semiconductor switching device, wherein a first high-voltage-side terminal of the power semiconductor switching device of the power semiconductor module and a second high-voltage-side terminal of a Schottky barrier diode of a wide bandgap semiconductor are independently arranged, and an inductance is provided between the first high-voltage-side terminal and the second high-voltage-side terminal.

As a further aspect, the freewheel diode with a small reverse recovery current includes a schottky barrier diode of a wide bandgap semiconductor.

As a further technical solution, the free-wheeling diode with small reverse recovery current includes a PiN diode of a wide bandgap semiconductor.

As a further technical solution, the gate driving speed of the power semiconductor module is connected in parallel with a free-wheeling diode having a small reverse recovery current.

By adopting the technical scheme, the invention has the following beneficial effects:

the power device driving circuit and the inverter circuit provided by the invention have the advantages that the SiC diodes are connected in parallel with small recovery current, the conduction loss and the recovery loss can be obviously reduced under the condition of not increasing the MHz frequency band noise, and the loss and the noise of the inverter can be reduced. The invention provides a switching circuit and an inverter circuit of a power semiconductor device including a silicon IGBT and a module in which the IGBT and the SiC diode are combined, wherein a resistance on a gate is set to be smaller than a resistance under the gate.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a block diagram of a driving circuit of a power semiconductor device according to a first embodiment of the present invention;

fig. 2 shows waveforms of voltage, current and loss when the first embodiment according to the present invention is applied;

fig. 3 illustrates an effect of reducing loss when the first embodiment according to the present invention is applied;

fig. 4 shows the evaluation result of noise in the MHz band when the first embodiment according to the present invention is applied;

FIG. 5 is a diagram of an inverter circuit according to the prior art;

fig. 6 shows waveforms of voltage, current and loss using a power module embedded in a PiN diode according to the prior art;

fig. 7 is a block diagram of a driving circuit of a power semiconductor device according to a second embodiment of the present invention;

FIG. 8 is a gate drive voltage waveform according to a second embodiment of the present invention;

fig. 9 is a block diagram of an inverter circuit according to a third embodiment of the present invention;

fig. 10 is an equivalent circuit diagram of a main circuit of an inverter according to a third embodiment of the present invention;

fig. 11 is a block diagram of an inverter circuit according to a third embodiment of the present invention.

Detailed Description

The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.