阅读说明：本技术 硬掩模用组合物 (Composition for hard mask ) 是由 崔相俊 梁敦植 李殷相 崔汉永 赵庸桓 金烔永 于 2019-02-20 设计创作，主要内容包括：本发明的硬掩模用组合物包含吲哚衍生物和芳香族单元。由硬掩模用组合物能够形成耐蚀刻性、涂布性和耐化学性同时提高了的硬掩模。(The composition for a hard mask of the present invention comprises an indole derivative and an aromatic unit. A hard mask having improved etching resistance, coating properties and chemical resistance can be formed from the composition for a hard mask.)

1. A composition for a hardmask, comprising: a polymer containing at least one of the repeating units represented by the following chemical formulas 1 to 3, and a solvent,

[ chemical formula 1]

[ chemical formula 2]

[ chemical formula 3]

In chemical formulae 1 to 3, R₁A single bond, an alkylene group having 1 to 10 carbon atoms or an arylene group having 6 to 40 carbon atoms,

R₂is hydrogen, substituted or unsubstituted alkyl with 1 to 6 carbon atoms, substituted or unsubstituted aryl with 6 to 24 carbon atoms or substituted or unsubstituted arylA substituted heteroaryl group of 6 to 24 carbon atoms,

R₃is hydrogen, hydroxyl, substituted or unsubstituted aryl of 6 to 40 carbon atoms or substituted or unsubstituted heteroaryl of 6 to 40 carbon atoms,

R₄is a substituted or unsubstituted aryl group having 6 to 40 carbon atoms or a substituted or unsubstituted heteroaryl group having 6 to 40 carbon atoms,

R₅is a substituted or unsubstituted arylene group having 6 to 40 carbon atoms or a substituted or unsubstituted heteroarylene group having 6 to 40 carbon atoms.

2. The composition for a hard mask according to claim 1, R₄Is at least one selected from the group consisting of phenyl, biphenyl, naphthyl, phenanthryl, phenalenyl, anthracyl, pyrenyl, fluoranthenyl, fluorenyl, hydroxyphenyl, hydroxybiphenyl, hydroxynaphthyl, methoxyphenyl, ethoxyphenyl, propylphenyl, and butoxyphenyl.

3. The composition for a hard mask according to claim 1, R₅Is at least one selected from the group consisting of phenylene, biphenyldiyl, naphthalenediyl, phenanthrenediyl, phenalene diyl, anthracene diyl, pyrenediyl, fluoranthene diyl, and fluorene diyl.

4. The composition for a hard mask according to claim 1, wherein the polymer comprises a condensate of an indole derivative represented by the following chemical formula 4 or chemical formula 5 and an aldehyde compound or a compound represented by the following chemical formula 6,

[ chemical formula 4]

[ chemical formula 5]

In chemical formulas 4 and 5, R₁Is a sheetA bond, an alkylene group having 1 to 10 carbon atoms or an arylene group having 6 to 40 carbon atoms,

R₂is hydrogen, substituted or unsubstituted alkyl of 1 to 6 carbon atoms, substituted or unsubstituted aryl of 6 to 24 carbon atoms or substituted or unsubstituted heteroaryl of 6 to 24 carbon atoms,

R₃is hydrogen, hydroxyl, substituted or unsubstituted aryl of 6 to 40 carbon atoms or substituted or unsubstituted heteroaryl of 6 to 40 carbon atoms,

[ chemical formula 6]

In chemical formula 6, R₅Is a substituted or unsubstituted arylene group having 6 to 40 carbon atoms or a substituted or unsubstituted heteroarylene group having 6 to 40 carbon atoms, R₆Is hydroxyl or alkoxy with 1 to 6 carbon atoms.

5. The composition for a hardmask according to claim 4, wherein the aldehyde compound comprises at least one selected from the group consisting of benzaldehyde, biphenyl formaldehyde, naphthalene aldehyde, fluorene aldehyde, phenanthrene aldehyde, phenalene aldehyde, anthracene aldehyde, pyrene aldehyde, fluoranthene aldehyde, hydroxybenzaldehyde, hydroxybiphenyl aldehyde, hydroxynaphthalene aldehyde, methoxybenzaldehyde, ethoxybenzaldehyde, propylbenzaldehyde, and butoxybenzaldehyde.

6. The composition for a hard mask as claimed in claim 4, R₅Is at least one selected from the group consisting of phenylene, biphenyldiyl, naphthalenediyl, phenanthrenediyl, phenalene diyl, anthracene diyl, pyrenediyl, fluoranthene diyl, and fluorene diyl.

7. The composition for a hard mask according to claim 1, wherein the weight average molecular weight of the polymer is 1000 or more and 8000 or less.

8. The composition for a hard mask according to claim 1, comprising 5 to 30% by weight of the polymer and 70 to 95% by weight of the solvent, based on the total weight of the composition.

9. The composition for a hard mask according to claim 1, further comprising at least one of a crosslinking agent, a catalyst and a surfactant.

Technical Field

The present invention relates to a composition for a hard mask. More specifically, the present invention relates to a composition for a hard mask, which contains an aromatic condensate or compound.

Background

For example, in the fields of semiconductor manufacturing, microelectronics, and the like, the integration of structures such as circuits, wirings, insulating patterns, and the like is continuously increasing. Thus, photolithography processes for fine patterning of the above-described structures have also been developed.

In general, a photoresist layer is formed by coating a photoresist on a film to be etched, and a photoresist pattern is formed by exposure and development processes. Next, a predetermined pattern can be formed by removing a portion of the film to be etched using the photoresist pattern as an etching mask. After the image transfer to the film to be etched, the photoresist pattern may be removed by ashing (ashing) and/or stripping (strip).

In order to suppress a decrease in resolution due to light reflection in the exposure step, an anti-reflective coating (ARC) layer may be formed between the film to be etched and the photoresist layer. In this case, the ARC layer may be additionally etched, so that the consumption amount or etching amount of the photoresist layer or the photoresist pattern may be increased. In addition, when the thickness of the film to be etched is increased or the amount of etching required for forming a desired pattern is increased, there is a possibility that sufficient etching resistance of the photoresist layer or the photoresist pattern may not be secured.

Therefore, in order to secure the etching resistance and etching selectivity of the photoresist for forming a desired pattern, a resist lower film may be added between the film to be etched and the photoresist layer.

The resist lower film needs to have sufficient etching resistance (or etching resistance) and heat resistance for a high-temperature etching process, for example, and needs to be formed in a uniform thickness by a spin coating process, for example.

Korean laid-open patent No. 10-2010-0082844 discloses an example of a resist lower film-forming composition.

Disclosure of Invention

Technical subject

An object of the present invention is to provide a composition for a hard mask, which can form a hard mask having excellent mechanical and chemical properties.

An object of the present invention is to provide a hard mask having improved mechanical and chemical characteristics.

Means for solving the problems

1. A composition for a hardmask, comprising: a polymer containing at least one of the repeating units represented by the following chemical formulas 1 to 3, and a solvent,

[ chemical formula 1]

[ chemical formula 2]

[ chemical formula 3]

(in chemical formulae 1 to 3, R₁A single bond, an alkylene group having 1 to 10 carbon atoms or an arylene group having 6 to 40 carbon atoms,

R₂is hydrogen, substituted or unsubstituted alkyl of 1 to 6 carbon atoms, substituted or unsubstituted aryl of 6 to 24 carbon atoms or substituted or unsubstituted heteroaryl of 6 to 24 carbon atoms,

R₃is hydrogen, hydroxyl, substituted or unsubstituted aryl of 6 to 40 carbon atoms or substituted or unsubstituted heteroaryl of 6 to 40 carbon atoms,

R₄is a substituted or unsubstituted aryl group having 6 to 40 carbon atoms or a substituted or unsubstituted heteroaryl group having 6 to 40 carbon atoms,

R₅substituted or unsubstituted arylene having 6 to 40 carbon atoms or substituted or unsubstituted heteroarylene having 6 to 40 carbon atoms).

2. The composition for a hard mask as described in 1, R₄Is at least one selected from the group consisting of phenyl, biphenyl, naphthyl, phenanthryl, phenalenyl, anthracyl, pyrenyl, fluoranthenyl, fluorenyl, hydroxyphenyl, hydroxybiphenyl, hydroxynaphthyl, methoxyphenyl, ethoxyphenyl, propylphenyl, and butoxyphenyl.

3. The composition for a hard mask as described in 1, R₅Is at least one selected from the group consisting of phenylene, biphenyldiyl, naphthalenediyl, phenanthrenediyl, phenalene diyl, anthracene diyl, pyrenediyl, fluoranthene diyl, and fluorene diyl.

4. The composition for a hard mask as described in the above 1, wherein the polymer comprises a condensation product of an indole derivative represented by the following chemical formula 4 or 5 and an aldehyde compound or a compound represented by the following chemical formula 6,

[ chemical formula 4]

[ chemical formula 5]

(in chemical formulas 4 and 5, R₁A single bond, an alkylene group having 1 to 10 carbon atoms or an arylene group having 6 to 40 carbon atoms,

R₂is hydrogen, substituted or unsubstituted alkyl of 1 to 6 carbon atoms, substituted or unsubstituted aryl of 6 to 24 carbon atoms or substituted or unsubstituted heteroaryl of 6 to 24 carbon atoms,

R₃is hydrogen, hydroxy, substituted or unsubstituted aryl of 6 to 40 carbon atoms or substituted or unsubstituted heteroaryl of 6 to 40 carbon atoms)

[ chemical formula 6]

(in chemical formula 6, R₅Is a substituted or unsubstituted arylene group having 6 to 40 carbon atoms or a substituted or unsubstituted heteroarylene group having 6 to 40 carbon atoms, R₆A hydroxyl group or an alkoxy group having 1 to 6 carbon atoms).

5. The composition for a hard mask as set forth in claim 4, wherein the aldehyde compound comprises at least one selected from the group consisting of benzaldehyde, biphenylcarboxaldehyde, naphthaldehyde, fluorenal, phenanthrene aldehyde, phenalene aldehyde, anthracene aldehyde, pyrene aldehyde, fluoranthenal, hydroxybenzaldehyde, hydroxybiphenyl aldehyde, hydroxynaphthalene aldehyde, methoxybenzaldehyde, ethoxybenzaldehyde, propylbenzaldehyde, and butoxybenzaldehyde.

6. The composition for a hard mask as described in the above 4, R₅Is at least one selected from the group consisting of phenylene, biphenyldiyl, naphthalenediyl, phenanthrenediyl, phenalene diyl, anthracene diyl, pyrenediyl, fluoranthene diyl, and fluorene diyl.

7. The composition for a hard mask as described in the above 1, wherein the weight average molecular weight of the polymer is 1000 or more and 8000 or less.

8. The composition for a hard mask as described in the above 1, comprising 5 to 30% by weight of the above polymer and 70 to 95% by weight of the above solvent, based on the total weight of the composition.

9. The composition for a hard mask as described in the above 1, further comprising at least one of a crosslinking agent, a catalyst and a surfactant.

Effects of the invention

The composition for a hard mask of an embodiment of the present invention can form a hard mask excellent in etching resistance, coatability and chemical resistance.

The composition for a hard mask according to an embodiment of the present invention includes a polymer including an indole derivative and an aromatic unit, so that an oxidative coupling reaction (oxidative coupling) is easily generated by the indole derivative when heated, and chemical resistance of the hard mask can be enhanced.

In addition, the carbon content (C%) may be increased due to the above aromatic unit, and chemical resistance and etching resistance of the hard mask can be improved by the interaction between polymers.

In some examples, both ends of the aromatic unit are bonded to the indole derivative via methylene groups, respectively, to improve flexibility of the polymer. This can improve coating properties such as flatness and gap-fill (gap-fill) properties of the hard mask composition.

A hard mask having a desired size and shape and improved mechanical reliability can be formed from the hard mask composition. Further, a high-resolution photolithography process can be realized by using the hard mask, and a target pattern with a desired fine line width can be formed.

The composition for a hard mask of an embodiment of the present invention can form a hard mask excellent in etching resistance, coatability and chemical resistance.

The composition for a hard mask according to an embodiment of the present invention includes a polymer including an indole derivative and an aromatic unit, so that an oxidative coupling reaction (oxidative coupling) is easily generated by the indole derivative when heated, and chemical resistance of the hard mask can be enhanced.

In addition, the carbon content (C%) may be increased due to the above aromatic unit, and chemical resistance and etching resistance of the hard mask can be improved by the interaction between polymers.

In some examples, both ends of the aromatic unit are bonded to the indole derivative via methylene groups, respectively, to improve flexibility of the polymer. This can improve coating properties such as flatness and gap-fill (gap-fill) properties of the hard mask composition.

A hard mask having a desired size and shape and improved mechanical reliability can be formed from the hard mask composition. Further, a high-resolution photolithography process can be realized by using the hard mask, and a target pattern with a desired fine line width can be formed.

Detailed Description

Embodiments of the present invention provide a composition for a hard mask, which includes a polymer including an indole structure and an aromatic unit, thereby improving etching resistance, coatability, and chemical resistance.

A hard mask film serving as a lower film of an anti-reagent can be formed by using the above composition for a hard mask, for example, by applying the composition between a photoresist layer and a film to be etched. The hard mask film may be partially removed by the photoresist pattern to form a hard mask, and the hard mask may be used as an additional etching mask.

The above-described hard mask film or hard mask can be used, for example, as a Spin-On hard mask (Spin-On Hardmask: SOH).

Hereinafter, the composition for a hard mask according to the embodiment of the present invention will be described in detail. In the case where the compound or resin represented by the chemical formula used in the present application has isomers, the compound or resin represented by the chemical formula means a representative chemical formula including the isomers thereof.

Further, these embodiments are merely illustrative of the present invention and do not limit the scope of the appended claims, and various changes and modifications of the embodiments, which are obvious to those skilled in the art, may be made within the scope of the scope and technical idea of the present invention, of which such changes and modifications naturally fall within the scope of the appended claims.

The composition for a hard mask of an embodiment of the present invention includes a polymer and a solvent. For example, the composition for a hard mask may further contain an additional agent such as a crosslinking agent or a catalyst.

Polymer and method of making same

According to an embodiment of the present invention, the composition for a hard mask includes a polymer including at least one of repeating units represented by the following chemical formulas 1 to 3.

[ chemical formula 1]

[ chemical formula 2]

[ chemical formula 3]

In the above chemical formulae 1 to 3, R₁May be a single bond, an alkylene group having 1 to 10 carbon atoms, or an arylene group having 6 to 40 carbon atoms.

R₂May be hydrogen, a substituted or unsubstituted alkyl group of 1 to 6 carbon atoms, a substituted or unsubstituted aryl group of 6 to 24 carbon atoms, or a substituted or unsubstituted heteroaryl group of 6 to 24 carbon atoms.

R₃May be hydrogen, hydroxy, substituted or unsubstituted aryl of 6 to 40 carbon atoms or substituted or unsubstituted heteroaryl of 6 to 40 carbon atoms.

R₄May be a substituted or unsubstituted aryl group having 6 to 40 carbon atoms or a substituted or unsubstituted heteroaryl group having 6 to 40 carbon atoms.

R₅May be a substituted or unsubstituted arylene group having 6 to 40 carbon atoms or a substituted or unsubstituted heteroarylene group having 6 to 40 carbon atoms.

In some embodiments, the substituted alkyl, aryl, or heteroaryl groups described above may include alkyl, aryl, or heteroaryl groups in which one or more hydrogen atoms are substituted with a halogen group, nitro group, amino group, aldehyde group, carboxyl group, or hydroxyl group.

The terms "aryl" and "arylene" as used herein may be used in the sense of referring collectively to groups containing more than one aromatic ring. For example, biphenyl or biphenylene are also included in the above-mentioned category of aryl or arylene groups.

For example, in the case of the above chemical formulas 1 to 3, since an indole structure or an indole derivative is contained in the main chain, it is possible to improve chemical resistance of a polymer or a hard mask while minimizing a decrease in film forming characteristics such as coatability.

By means of the above-mentioned indole structures or derivatives, adjacent intermolecular (intermolecular) or intramolecular (intramolecular) interactions can be promoted by, for example, oxidative coupling (oxidative coupling). Thus, the chemical resistance of the polymer or hardmask can be enhanced by additional crosslinking or lattice formation.

In addition, the polymer containing the repeating units of the above chemical formulas 1 to 3 has an increased carbon content in the polymer due to the aromatic unit, thereby being capable of enhancing the etching resistance of the polymer or the hard mask.

In some exemplary embodiments, R₁May be a fluorene structure or a single bond. For example, at R₁In the case of having a fluorene-based structure, the effect of improving etching resistance by increasing the carbon content and the effect of improving coatability by a rotatable structure or a three-dimensional structure can be simultaneously achieved.

In some exemplary embodiments, R₂May be hydrogen, methyl (methyl), ethyl (ethyl), propyl (propyl), isopropyl (isopropyl), n-butyl (n-butyl), t-butyl (t-butyl), isobutyl (isobuteyl), n-pentyl (n-pentyl), n-hexyl (n-hexyl), phenyl (phenyl), 1-naphthyl (1-naphthyl), 2-naphthyl (2-naphthyl), 1-anthryl (1-anthryl), 2-anthryl (2-anthryl), 9-anthryl (9-anthryl), phenanthryl (phenanthryl), or tetracenyl (naphthanyl), but is not limited thereto.

In some exemplary embodiments, R₃Can be hydrogen, methyl, ethyl, propyl, isopropyl, n-butyl, tert-butyl, isobutyl, n-pentyl, n-hexyl, phenyl, 1-naphthyl, 2-naphthyl, 1-anthryl, 2-anthryl, 9-anthryl, phenanthrylTetracenyl, hydroxyl, or carboxyl, but not limited thereto.

According to an exemplary embodiment, R in the above chemical formula 1 and chemical formula 3₄May be at least one selected from the group consisting of phenyl, biphenyl (biphenyl), naphthyl (naphthyl), phenanthrenyl (phenanthryl), phenalenyl (phenalenyl), anthracenyl (anthrenyl), pyrenyl (pyrenyl), fluoranthenyl (fluoranthrenyl), fluorenyl (fluorrenyl), hydroxyphenyl (hydroxyphenyl), hydroxybiphenyl (hydroxybiphenyl), hydroxynaphthyl (hydroxynapthyl), methoxyphenyl (methoxyphenyl), ethoxyphenyl (ethoxyphenyl), propylphenyl, and butoxyphenyl (butoxyphenyl).

For example, when a polycyclic aromatic compound is used as the aromatic unit, the increase in the carbon content can improve the mechanical reliability such as the etching resistance and chemical resistance of the hard mask.

R is represented by the above chemical formula 1₄May be exposed as pendant groups of the above-mentioned polymers. By the interaction between the aromatic compounds contained in the adjacent polymers or unit structures, the density of the polymers or unit structures is increased, and the packing (packing) characteristics can be improved. This can further improve the etching resistance of the hard mask.

According to an exemplary embodiment, in the above chemical formula 2, R₅May be at least one selected from the group consisting of phenylene (phenylene), biphenyldiyl (biphenyldiyl), naphthalenediyl (naphthalene diyl), phenanthrene diyl (phenanthrene diyl), phenalene diyl (phenalene diyl), anthracene diyl (anthracene diyl), pyrene diyl (pyrene diyl), fluoranthene diyl (fluoranthene diyl), and fluorene diyl (fluorene diyl).

R is represented by the above chemical formula 2₅Can be assisted by methylene groups (-CH) located on both sides₂-) to connect. This improves the flexibility of the aromatic unit, thereby further improving the coatability of the hard mask composition.

According to an exemplary embodiment, the polymer may include a condensate of an indole derivative represented by the following chemical formula 4 or chemical formula 5 and an aldehyde compound or a compound represented by the following chemical formula 6.

[ chemical formula 4]

[ chemical formula 5]

[ chemical formula 6]

R of the above chemical formula 4 to chemical formula 5₁、R₂、R₃And R₅The same as defined in chemical formulas 1 to 3.

In the above chemical formula 6, R₆May be any one selected from the group consisting of a hydroxyl group and an alkoxy group having 1 to 6 carbon atoms, and may preferably be a methoxy group.

In some embodiments, the indole derivatives represented by the above chemical formulas 4 to 5 may include one or more hydroxyl groups. The hydroxyl group can accelerate the reaction rate of a condensation reaction (for example, nucleophilic substitution reaction) with an aldehyde compound described later or a compound represented by the above chemical formula 4.

By using an aldehyde group as the linking group, the reactivity of the polymerization or condensation reaction can be improved as compared with the case of using an alcohol group or a ketone group as the linking group.

In some embodiments, the aldehyde compound may include at least one selected from benzaldehyde (benzaldehyde), biphenyl formaldehyde (biphenyl carbonate), naphthaldehyde (naphthaldehyde), fluorene aldehyde (fluorolene carbonate), phenalene aldehyde (phenalene carbonate), anthracene aldehyde (anthrylene carbonate), and pyrene aldehyde (pyrenecarbonate).

In the case where the above aldehyde compound is used as an aromatic structure, the carbon content in the polymer is increased to improve the etching resistance of the polymer or the hard mask, for example, the etching resistance to halogen compound plasma.

In the production of the polymer, the indole derivative of chemical formula 4 or chemical formula 5 containing a hydroxyl group and the aldehyde compound or the compound represented by chemical formula 5 may be used, for example, in a molar ratio ranging from about 1:0.5 to 1:1, but is not necessarily limited thereto.

In one embodiment, the weight average molecular weight of the polymer may be, for example, about 1000 to 8000, and preferably about 1500 to 4000. While being able to simultaneously ensure excellent etching resistance, coating properties, and chemical resistance within the above ranges, the present invention is not limited thereto.

The content of the above polymer is not particularly limited, and may be, for example, about 5 to 30% by weight based on the total weight of the composition for a hard mask. Within the above content range, the etching resistance, the coating property and the chemical resistance of the hard mask composition can be improved in a well-balanced manner.

In one embodiment, the polymer may have a Polydispersity index (PDI) [ weight average molecular weight (Mw)/number average molecular weight (Mn) ] of about 1.5 to 6.0, and preferably about 1.5 to 4.0. Excellent heat resistance, etching resistance, coating properties and chemical resistance can be simultaneously ensured within the above ranges.

Solvent(s)

The solvent used in the composition for a hard mask according to the embodiment of the present invention is not particularly limited, and may contain an organic solvent having sufficient solubility for the above-mentioned polymer. For example, the solvent may include Propylene Glycol Monomethyl Ether Acetate (PGMEA), Propylene Glycol Monomethyl Ether (PGME), cyclohexanone, cyclopentanone, ethyl lactate, gamma-butyrolactone (GBL), acetylacetone (acetyl acetate), and the like.

The content of the solvent is not particularly limited, and may be the balance other than the polymer and the additional preparation described later. For example, the solvent may be contained in an amount of about 70 to 95% by weight, based on the total weight of the composition for a hard mask.

Supplementary preparation

Optionally, the hardmask composition according to an embodiment of the present invention may further include additional agents such as a crosslinking agent, a catalyst, and a surfactant.

The crosslinking agent can crosslink the repeating units contained in the polymer with each other, and can react with, for example, a hydroxyl group of the polymer. The curing properties of the composition for a hard mask can be further enhanced by the crosslinking agent.

Examples of the crosslinking agent include melamine, amino resin, glycoluril compound, diepoxy compound, and the like.

The crosslinking agent may specifically include, for example, etherified amino resins such as methylated or butylated melamine (specifically, N-methoxymethyl-melamine or N-butoxymethyl-melamine) and methylated or butylated urea (urea) resin (specifically, Cymel U-65 resin or UFR 80 resin), glycoluril derivatives (see chemical formula 7, specifically, Powderlink 1174), bis (hydroxymethyl) -p-cresol compounds represented by chemical formula 8, and the like. Further, a bicyclo oxygen compound represented by the following chemical formula 9 and a melamine compound represented by the following chemical formula 10 may also be used as the crosslinking agent.

[ chemical formula 7]

[ chemical formula 8]

[ chemical formula 9]

[ chemical formula 10]

As the catalyst, an acid catalyst or a basic catalyst can be used.

The acid catalyst may be a thermally activated acid catalyst. As an example of the acid catalyst, an organic acid such as p-toluenesulfonic acid can be used. As the acid catalyst, a Thermal Acid Generator (TAG) type compound may be used. Examples of the thermal acid generator catalyst include pyridinium p-toluenesulfonateSalts (pyridine p-toluene sulfonate), 2,4,4, 6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, alkyl esters of organic sulfonic acids, and the like.

As the above-mentioned basic catalyst, a catalyst selected from NH may be used₄OH or NR₄Any one of ammonium hydroxides represented by OH (R is an alkyl group).

In the case where the above-mentioned crosslinking agent is contained, the content of the crosslinking agent may be about 1 to 30 parts by weight, preferably about 5 to 20 parts by weight, and more preferably about 5 to 10 parts by weight, relative to 100 parts by weight of the above-mentioned polymer.

In the case where the above catalyst is contained, the content of the catalyst may be about 0.001 to 5 parts by weight, preferably about 0.1 to 2 parts by weight, and more preferably about 0.1 to 1 part by weight, relative to 100 parts by weight of the above polymer.

Within the content ranges of the above-mentioned crosslinking agent and the above-mentioned catalyst, suitable crosslinking characteristics can be obtained without deteriorating etching resistance, coatability and chemical resistance of the above-mentioned polymer.

The composition for a hard mask according to an embodiment of the present invention may further include a surfactant to improve the surface properties and adhesion of the hard mask. As the surfactant, alkyl benzene sulfonate, alkyl pyridine may be usedSalts, polyethylene glycols, quaternary ammonium salts, and the like, but are not limited thereto. Relative to the above-mentioned polyThe surfactant may be contained, for example, in an amount of about 0.1 to 10 parts by weight, based on 100 parts by weight of the composition.

Hereinafter, experimental examples including specific examples and comparative examples are provided to help understanding of the present invention, but the present invention is only illustrative and not limited to the scope of the appended claims, and various changes and modifications of the examples may be made within the scope and technical spirit of the present invention, which will be apparent to those skilled in the art, and such changes and modifications also fall within the scope of the appended claims.