阅读说明：本技术 用于模制半导体的环氧树脂组合物、使用其的模制膜和半导体封装 (Epoxy resin composition for molding semiconductor, molding film using the same, and semiconductor package ) 是由 郑珉寿 庆有真 崔炳柱 郑遇载 李光珠 赵安部 于 2019-01-09 设计创作，主要内容包括：本发明涉及用于模制半导体的环氧树脂组合物以及使用这样的用于模制半导体的环氧树脂组合物的模制膜和半导体封装,所述用于模制半导体的环氧树脂组合物在具有低的热膨胀系数并因此表现出改善的翘曲特性的同时具有优异的耐热性和机械特性并且还具有改善的可见性。(The present invention relates to an epoxy resin composition for molding semiconductors, which has excellent heat resistance and mechanical properties while having a low thermal expansion coefficient and thus exhibiting improved warpage properties and also has improved visibility, and a molded film and a semiconductor package using such an epoxy resin composition for molding semiconductors.)

1. An epoxy resin composition for molding semiconductors, comprising:

an epoxy resin including an epoxy polymer represented by the following chemical formula 1 and an epoxy compound represented by the following chemical formula 2; and

50% by weight or more and 90% by weight or less of an inorganic filler:

[ chemical formula 1]

Wherein, in chemical formula 1, R is an alkyl group having 1 to 20 carbon atoms or a cycloalkyl group having 3 to 20 carbon atoms, n is an integer of 1 to 30, C₁Is a cycloalkane having 3 to 10 carbon atoms, and L₁Is a direct bond or an alkylene group having 1 to 10 carbon atoms,

[ chemical formula 2]

Wherein, in chemical formula 2, C₂To C₃Each independently a cyclic alkane having 3 to 10 carbon atoms to which an epoxy group is bonded, and L₂Is a direct bond or an alkylene group having 1 to 10 carbon atoms.

2. The epoxy resin composition for molding semiconductors according to claim 1, wherein in chemical formulas 1 and 2, C₁To C₂Each independently cyclohexane having 6 carbon atoms.

3. The epoxy resin composition for molding semiconductors according to claim 1, wherein, in chemical formulas 1 and 2, L₁Is a direct bond, and L₂Is an alkylene group having 1 to 5 carbon atoms.

4. The epoxy resin composition for molding a semiconductor according to claim 1, wherein the epoxy compound is contained in an amount of 50 parts by weight or more and 90 parts by weight or less based on 100 parts by weight of the epoxy polymer.

5. The epoxy resin composition for molding a semiconductor according to claim 1, wherein the inorganic filler is contained in an amount of 200 parts by weight or more and 1000 parts by weight or less based on 100 parts by weight of the epoxy resin.

6. The epoxy resin composition for molding a semiconductor according to claim 1, wherein the inorganic filler comprises silica.

7. The epoxy resin composition for molding a semiconductor according to claim 6, wherein the silica has an average particle diameter of 100 μm or less.

8. The epoxy resin composition for molding a semiconductor according to claim 1, wherein the epoxy resin composition for molding a semiconductor further comprises a thermal curing catalyst, an epoxy curing agent, a leveling agent, a dispersant or a solvent.

9. A molded film, comprising: a polymer containing a repeating unit represented by the following chemical formula 3 and a repeating unit represented by the following chemical formula 4; and 50 wt% or more and 90 wt% or less of an inorganic filler dispersed in the polymer:

[ chemical formula 3]

[ chemical formula 4]

Wherein, in chemical formulas 3 and 4, C₄To C₈Each independently a cycloalkane having 3 to 10 carbon atoms, and L₃To L₅Each independently a direct bond or an alkylene having 1 to 10 carbon atomsAnd (4) a base.

10. The molded film of claim 9, further comprising a repeating unit represented by the following chemical formula 5:

[ chemical formula 5]

Wherein, in chemical formula 5, C₉And C₁₀Each independently a cycloalkane having 3 to 10 carbon atoms, and L₆Is a direct bond or an alkylene group having 1 to 10 carbon atoms.

11. The molded membrane of claim 10, wherein the repeating unit represented by chemical formula 4 is crosslinked via the repeating unit represented by chemical formula 5.

12. The molded membrane according to claim 11, wherein a structure in which the repeating unit represented by chemical formula 4 is crosslinked via the repeating unit represented by chemical formula 5 is represented by the following chemical formula 6:

[ chemical formula 6]

Wherein, in chemical formula 6, C₆To C₁₀Each independently a cycloalkane having 3 to 10 carbon atoms, and L₅And L₆Each independently a direct bond or an alkylene group having 1 to 10 carbon atoms.

13. The molded membrane of claim 9, wherein the polymer comprises a reaction product between an epoxy polymer represented by chemical formula 1 and an epoxy compound represented by chemical formula 2 as defined in claim 1.

14. The molded film of claim 9, wherein the molded film has a transmittance (measured at 550 nm) of 60% or greater and 90% or less.

15. A molded film, comprising: a cycloaliphatic epoxy resin matrix; and an inorganic filler dispersed in the cyclic aliphatic epoxy resin matrix, wherein an absolute value of a difference between a refractive index of the cyclic aliphatic epoxy resin matrix and a refractive index of the inorganic filler is 0.1 or less.

16. The molded film of claim 15, wherein the molded film has a transmittance (measured at 550 nm) of 60% or greater and 90% or less.

17. The molded film as defined in claim 15, wherein the cyclic aliphatic epoxy resin matrix comprises a cyclic aliphatic epoxy resin containing the repeating unit represented by chemical formula 3 of claim 9 and the repeating unit represented by chemical formula 4 of claim 9 or a cured product thereof.

18. The molded membrane of claim 15, wherein the cyclic aliphatic epoxy resin matrix comprises a cyclic aliphatic epoxy resin comprising a reaction product between an epoxy polymer represented by chemical formula 1 and an epoxy compound represented by chemical formula 2 as defined in claim 1.

19. The molded film of claim 15, wherein the inorganic filler is dispersed in the cyclic aliphatic epoxy resin matrix in an amount of 50 weight percent or more and 90 weight percent or less, based on the total weight of the molded film.

20. A semiconductor package comprising a semiconductor sealed with the mold film according to claim 9 or 15.

Technical Field

Cross Reference to Related Applications

This application claims the benefit of the application date of korean patent application No. 10-2018-.

The present invention relates to an epoxy resin composition for molding a semiconductor, a molding film using the same, and a semiconductor package. More particularly, the present invention relates to an epoxy resin composition for molding semiconductors having excellent heat resistance and mechanical properties while having a low thermal expansion coefficient and thus exhibiting improved warpage characteristics and also having improved visibility, and a molded film and a semiconductor package using such an epoxy resin composition for molding semiconductors.

Background

Semiconductor chip manufacturing processes typically include a micropatterning process on a wafer and a packaging process in which the wafer is ground to the dimensions of the final device.

The packaging process comprises the following steps: a wafer test process of inspecting a defective semiconductor chip; a dicing process of dicing the wafer into individual chips; a die bonding process of attaching an individual chip to a circuit film or a mounting board of a lead frame; a wire bonding process of connecting a chip pad provided on a semiconductor chip with a circuit film or a circuit pattern of a lead frame via an electrical connection means (e.g., a wire); a molding process of wrapping the outside of the semiconductor with an encapsulating material to protect the internal circuit and other components of the semiconductor chip; a trimming process of breaking a barrier rib (dam bar) connecting the lead wires; a forming process of bending the lead to obtain a desired shape; and a final product test process of inspecting the packaged product for defects.

In particular, the molding process is indispensable for preventing the internal circuit and other components of the semiconductor chip from being exposed to the outside and thus greatly deteriorating the performance thereof due to moisture, impact, heat, and the like.

However, in recent years, with the trend toward miniaturization, weight reduction, and higher functionalization of electronic devices, semiconductor packages are made smaller, lighter, and thinner. Therefore, in the process of manufacturing a thin semiconductor package, there is a problem that the package is bent due to thermal shrinkage, curing shrinkage, and the like of the epoxy resin composition during the molding process, as compared to the conventional semiconductor packaging process.

In order to solve these problems, attempts have been made to improve the warpage characteristics by adding a large amount of an inorganic filler to an epoxy resin used in a molding process and thus reducing the difference between the thermal expansion coefficient of the epoxy resin composition and the thermal expansion coefficient between semiconductor chips.

However, since an excessive amount of inorganic filler is added in this manner, there is a limit in that visibility is reduced even if additional pigment or dye is not added in the finally manufactured semiconductor package.

In this regard, there is a need to develop an epoxy resin composition for molding semiconductors having improved visibility while having a low thermal expansion coefficient and thus exhibiting improved warpage characteristics.

Disclosure of Invention

Technical problem

An object of the present invention is to provide an epoxy resin composition for molding semiconductors which has excellent heat resistance and mechanical properties while having a low thermal expansion coefficient and thus exhibiting improved warpage characteristics and also has improved visibility.

It is another object of the present invention to provide a molded film obtained using the aforementioned epoxy resin composition for molding semiconductors.

It is yet another object of the present invention to provide a semiconductor package sealed with a molded film.

Technical scheme

In order to achieve the above object, the present invention provides an epoxy resin composition for molding semiconductors, comprising: an epoxy resin including an epoxy polymer represented by the following chemical formula 1 and an epoxy compound represented by the following chemical formula 2; and 50 wt% or more and 90 wt% or less of an inorganic filler.

[ chemical formula 1]

In chemical formula 1, R is an alkyl group having 1 to 20 carbon atoms, or a cycloalkyl group having 3 to 20 carbon atoms, n is an integer of 1 to 30, C₁Is a cycloalkane having 3 to 10 carbon atoms, L₁Is a direct bond or an alkylene group having 1 to 10 carbon atoms.

[ chemical formula 2]

In chemical formula 2, C₂To C₃Each independently a cyclic alkane having 3 to 10 carbon atoms to which an epoxy group is bonded, and L₂Is a direct bond or an alkylene group having 1 to 10 carbon atoms.

The present invention also provides a molded film comprising: a polymer containing a repeating unit represented by the following chemical formula 3 and a repeating unit represented by the following chemical formula 4; and 50% by weight or more and 90% by weight or less of an inorganic filler dispersed in the polymer.

[ chemical formula 3]

[ chemical formula 4]

In chemical formulas 3 and 4, C₄To C₈Each independently a cycloalkane having 3 to 10 carbon atoms, and L₃To L₅Each independently a direct bond or an alkylene group having 1 to 10 carbon atoms.

In addition, the present invention provides a semiconductor package including a semiconductor sealed with the mold film of the above-described another embodiment.

Hereinafter, an epoxy resin composition for molding a semiconductor, a molding film using the same, and a semiconductor package according to embodiments of the present invention will be described in more detail.

Throughout the specification, when a portion "includes" one constituent element, unless specifically stated otherwise, this does not mean that another constituent element is excluded, but means that another constituent element may be further included.

As used herein, the weight average molecular weight means a weight average molecular weight according to polystyrene measured by a GPC method, in determining the weight average molecular weight according to polystyrene measured by the GPC method, a conventionally known analytical device, a detector such as a refractive index detector, and an analytical column may be used, temperature, solvent, and flow rate conditions that are generally applied may be used, specific examples of the measurement conditions are as follows, using Polymer L analytes P L gel MIX-B300mm column at an evaluation temperature of 160 ℃, a Waters P L-GPC 220 instrument, using 1,2, 4-trichlorobenzene as a solvent at a flow rate of 1m L/min, preparing a sample at a concentration of 10mg/10m L and then feeding it in an amount of 200 μ L, a value of Mw may be determined using a calibration curve formed from polystyrene standards, 9 kinds of molecular weights 2000/10000/30000/70000/200000/700000/2000000/4000000/10000000 of the polystyrene standards.

As used herein, a symbolOrMeans a bond to another substituent, and a direct bond means that no other atom is present in the moiety represented as L.

In the present specification, the alkyl group may be linear or branched. The number of carbon atoms thereof is not particularly limited, but is preferably 1 to 40. According to one embodiment, the number of carbon atoms of the alkyl group is from 1 to 20. According to another embodiment, the number of carbon atoms of the alkyl group is from 1 to 10. According to yet another embodiment, the number of carbon atoms of the alkyl group is from 1 to 6. Specific examples of the alkyl group include methyl, ethyl, propyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tert-butyl, sec-butyl, 1-methyl-butyl, 1-ethyl-butyl, pentyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4-methyl-2-pentyl, 3-dimethylbutyl, 2-ethylbutyl, heptyl, n-heptyl, 1-methylhexyl, cyclopentylmethyl, cycloheptylmethyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, 2-ethylhexyl, 2-propylpentyl, n-nonyl, 2-dimethylheptyl, 1-ethyl-propyl, 1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl, 5-methylhexyl, and the like, but are not limited thereto.

In the present specification, the cycloalkyl group is not particularly limited, but the number of carbon atoms thereof is 3 to 60. According to one embodiment, the cycloalkyl group has 3 to 30 carbon atoms. According to another embodiment, the cycloalkyl group has 3 to 20 carbon atoms. According to yet another embodiment, the cycloalkyl group has 3 to 6 carbon atoms. Specific examples thereof include cyclopropyl, cyclobutyl, cyclopentyl, 3-methylcyclopentyl, 2, 3-dimethylcyclopentyl, cyclohexyl, 3-methylcyclohexyl, 4-methylcyclohexyl, 2, 3-dimethylcyclohexyl, 3,4, 5-trimethylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, cyclooctyl and the like, but are not limited thereto.

In the present specification, the aryl group is not particularly limited, but preferably has 6 to 60 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. According to one embodiment, the aryl group has 6 to 30 carbon atoms. According to another embodiment, the aryl group has 6 to 20 carbon atoms. Monocyclic aryl groups can include, but are not limited to, phenyl, biphenyl, terphenyl, and the like. Polycyclic aryl groups may include, but are not limited to, naphthyl, anthryl, phenanthryl, pyrenyl, and the like,A base,And fluorenyl groups, and the like.

In the present specification cycloalkanes are those of formula C_nH_2nWherein the number of carbons n may be 3 to 20, 3 to 10, 4 to 8, or 5 to 6. Specific examples thereof include cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane and the like.

In this specification, alkylene is a divalent functional group derived from an alkane. For example, alkylene is straight or branched chain and may include methylene, ethylene, propylene, isobutylene, sec-butylene, tert-butylene, pentylene, hexylene, and the like.

In the present specification, an "adjacent" group may mean: a substituent that replaces an atom directly attached to the atom replaced by the corresponding substituent, a substituent that is sterically closest to the corresponding substituent, or another substituent that replaces an atom replaced by the corresponding substituent. For example, two substituents substituted at the ortho position of the phenyl ring and two substituents substituted for the same carbon in the aliphatic ring can be construed as groups "adjacent" to each other.

1. Epoxy resin composition for molding semiconductor

According to an embodiment of the present invention, there may be provided an epoxy resin composition for molding a semiconductor, including: an epoxy resin comprising an epoxy polymer represented by chemical formula 1 and an epoxy compound represented by chemical formula 2; and 50 wt% or more and 90 wt% or less of an inorganic filler.

The present inventors found a limitation of visibility deterioration in a conventional epoxy resin composition for molding semiconductors including an excess amount of an inorganic filler as well as an epoxy resin, and developed a method of introducing a new epoxy resin including an epoxy polymer represented by chemical formula 1 and an epoxy compound represented by chemical formula 2 to solve the problem. The present inventors found through experiments that in the case of a molded film obtained from a composition comprising 50% by weight or more and 90% by weight or less of an inorganic filler and a novel epoxy resin containing a specific structure represented by chemical formulas 1 and 2 as described above, the effects of improving mechanical properties, heat resistance and warpage properties can be simultaneously achieved by adding an excessive amount of the inorganic filler while increasing transparency and having excellent visibility, thereby completing the present invention.

In the epoxy resin, since the epoxy polymer of chemical formula 1 having excellent heat resistance and modulus and the epoxy compound of chemical formula 2 which exists in a liquid state at room temperature and thus is advantageous for containing a high content of the inorganic filler are mixed, the solubility of the inorganic filler is improved due to the liquid epoxy compound, thereby suppressing a phenomenon in which the inorganic filler is eluted to the surface of the epoxy resin and visibility is reduced. In addition, heat resistance, mechanical properties and warpage properties are greatly improved by the polymerized epoxy structure, and two different materials can be uniformly distributed to exhibit overall uniform physical properties.

Unlike ordinary epoxy resins, epoxy resins do not contain unsaturated aliphatic functional groups but contain cyclic aliphatic functional groups. Accordingly, the epoxy resin may have a refractive index very similar to that of the silica filler itself used as the inorganic filler, thereby achieving a uniformly high transmittance in the molding film.

In particular, when the molding process of the semiconductor chip is performed using the epoxy resin composition containing a high content of the inorganic filler and the epoxy resin, the warpage characteristics of the semiconductor chip and the circuit board are minimized in the inside of the molded semiconductor package that completes the molding, and the durability of the thin semiconductor package can be improved. In addition, heat resistance and mechanical properties of the molded film outside the semiconductor package are improved, and performance as a protective film of the semiconductor package can be improved. In addition, since the solubility of the inorganic filler can be increased and the visibility can be improved, defects of the semiconductor chip and the circuit board inside the semiconductor package can be easily captured. In addition, by blending pigments, dyes, and the like, a target color can be clearly achieved.

Details of each component of the epoxy resin composition for semiconductors will be described below.

(1) Epoxy resin

The epoxy resin is an adhesive resin, which is a thermosetting resin that can be thermally cured by an epoxy curing agent or the like further applied to the epoxy resin composition.

In chemical formula 1, R is an alkyl group having 1 to 20 carbon atoms or a cycloalkyl group having 3 to 20 carbon atoms, n is an integer of 1 to 30, C₁Is a cycloalkane having 3 to 10 carbon atoms, and L₁Is a direct bond or an alkylene group having 1 to 10 carbon atoms.

In particular, the epoxy polymer represented by chemical formula 1 has a structure in which an epoxy functional group is bonded to a group represented by C_lThe structure of cycloalkane having 3 to 10 carbon atoms is shown, and the epoxy resin can have high weather resistance (weather resistance) and transparency due to the chemical structural feature that it does not contain a double bond at all in the molecule.

Specifically, the epoxy polymer represented by chemical formula 1 does not include a general unsaturated aliphatic functional group but includes a cyclic aliphatic functional group, and thus the synthesized epoxy resin may have a refractive index very similar to that of the silica filler itself used as the inorganic filler, thereby achieving uniform high transmittance in the molded film.

On the other hand, since a bisphenol-based epoxy polymer, which is an epoxy polymer used in a conventional molding film, contains a double bond in the molecule, it exhibits relatively low weather resistance and transparency.

In addition, the epoxy polymer represented by chemical formula 1 has low viscosity characteristics and thus is extremely advantageous for adding an excessive amount of filler. When the synthesis of the polymer proceeds to the oxidation reaction of the double bond of the cycloalkyne, it may provide an effect that ionic impurities (e.g., chloride ions) in the finally synthesized epoxy polymer may be significantly reduced, as compared to a general bisphenol-based epoxy polymer synthesis method.

On the other hand, in chemical formula 2, C₂To C₃Each independently a cyclic alkane having 3 to 10 carbon atoms to which an epoxy group is bonded, and L₂Is a direct bond or an alkylene group having 1 to 10 carbon atoms.

In chemical formula 2, in the cycloalkane having 3 to 10 carbon atoms to which an epoxy group is bonded, the epoxy group may be bonded via two adjacent carbon atoms of the cycloalkane having 3 to 10 carbon atoms.

Preferably, in chemical formula 1, R is an alkyl group having 1 to 20 carbon atoms or a cycloalkyl group having 3 to 20 carbon atoms, n is an integer of 1 to 20, C₁Is cyclohexane having 6 carbon atoms, and L₁May be a direct bond.

Specifically, chemical formula 1 may be represented by the following chemical formula 1-1.

[ chemical formula 1-1]

In chemical formula 1-1, R, n and L₁The definitions of (a) are the same as those described above in chemical formula 1.

Further, in chemical formula 2, preferably, C₂To C₃Each independently an epoxy group-bonded cyclohexane having 6 carbon atoms, and L₂Is an alkylene group having 1 to 5 carbon atoms (e.g., a methylene group having 1 carbon atom).

The epoxy compound represented by chemical formula 2 does not include a general unsaturated aliphatic functional group but includes a cyclic aliphatic functional group, and thus the synthesized epoxy resin may have a refractive index very similar to that of the silica filler itself used as the inorganic filler, thereby achieving uniform high transmittance in the molded film.

Specifically, chemical formula 2 may be represented by the following chemical formula 2-1.

[ chemical formula 2-1]

In chemical formula 2-1, L₂The definitions of (a) are the same as those described above in chemical formula 2.

The epoxy polymer represented by chemical formula 1 may have a weight average molecular weight (measured by GPC) of 100g/mol or more and 5000g/mol or less. Due to the epoxy polymer represented by chemical formula 1, transparency, heat resistance and modulus of the epoxy resin, which is a reaction product to be manufactured, may be improved, and low viscosity makes it possible to improve dispersibility of a high content of the inorganic filler.

The epoxy polymer represented by chemical formula 2 may exist in a liquid state at room temperature (20 to 30 ℃), and thus the epoxy resin, which is a reaction product to be manufactured, may contain a high content of an inorganic filler.

On the other hand, the epoxy compound represented by chemical formula 2 may be included in an amount of 50 parts by weight or more and 90 parts by weight or less, 60 parts by weight or more and 85 parts by weight or less, or 65 parts by weight or more and 85 parts by weight or less, based on 100 parts by weight of the epoxy polymer represented by chemical formula 1. When the epoxy compound represented by chemical formula 2 is excessively decreased, the epoxy resin to be manufactured may not sufficiently contain a high content of the inorganic filler, so that mechanical properties and warpage properties of the molded film may be deteriorated, and when the epoxy compound represented by chemical formula 2 is excessively increased, heat resistance and mechanical properties of the final molded film may be decreased.

On the other hand, the epoxy resin may be included in an amount of 5 wt% or more and 40 wt% or less, 5 wt% or more and 30 wt% or less, or 5 wt% or more and 25 wt% or less, based on the total weight of the epoxy resin composition.

(2) Inorganic filler

The epoxy resin composition for molding a semiconductor may include 50% by weight or more and 90% by weight or less, 60% by weight or more and 80% by weight or less, or 70% by weight or more and 90% by weight or less of an inorganic filler, based on the total weight of the epoxy resin composition. Specifically, the inorganic filler may be included in an amount of 200 parts by weight or more and 1000 parts by weight or less, or 220 parts by weight or more and 700 parts by weight or less, or 230 parts by weight or more and 620 parts by weight or less, based on 100 parts by weight of the epoxy resin. In this way, by adding the inorganic filler at a high content, the coefficient of thermal expansion of the molded film obtained from the epoxy resin composition for molding semiconductors is reduced, and thus the difference in coefficient of thermal expansion between semiconductor chips is reduced, the degree of warpage of the finally manufactured semiconductor package can be reduced, and the mechanical characteristics of the molded film can be improved.

Inorganic fillers may be added for improving workability, heat resistance and thermal conductivity of the composition, and for adjusting melt viscosity and the like. Examples thereof include, but are not limited to, silica, titanium dioxide, aluminum hydroxide, calcium carbonate, magnesium hydroxide, alumina, talc, aluminum nitride, or a mixture of two or more thereof.

However, silica can be preferably used as the inorganic filler. In particular, as the silica, silica having an average particle diameter of 100 μm or less, 10 μm or less, 0.1 μm or more and 100 μm or less, or 0.1 μm or more and 10 μm or less may be used.

The average particle diameter of silica can be determined by examining the particle diameters of all silica, and the particle diameter of silica can be determined on a cross section of a molded film to be described later. The average particle size of the silica can be determined by the particle size of all the silica used in producing the molded film or the average particle size thereof.

The silica may be a group of individual particles having an average particle diameter of 100 μm or less, 10 μm or less, 0.1 μm or more and 100 μm or less, or 0.1 μm or more and 10 μm or less. The individual fine particles included in the group may have an average particle diameter of 100 μm or less, 10 μm or less, 0.1 μm or more and 100 μm or less, or 0.1 μm or more and 10 μm or less. More specifically, 95% to 99% of the individual fine particles included in the group have a particle diameter of 100 μm or less, 10 μm or less, 0.1 μm or more and 100 μm or less, or 0.1 μm or more and 10 μm or less.

(3) Epoxy resin composition

The epoxy resin composition comprises the above epoxy resin and an inorganic filler, and examples of a method for producing the epoxy resin composition are not particularly limited. A method of mixing the epoxy resin and the inorganic filler by various methods, for example, using a mixer or the like, may be used.

In addition, the epoxy resin composition may contain a thermal curing catalyst, an epoxy curing agent, a leveling agent, a dispersant or a solvent, if necessary.

In addition, a heat curing catalyst is used to promote curing of the heat-curable binder resin during heat curing. The heat curing catalyst which may be added is not particularly limited, but examples thereof may include imidazole compounds such as imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1-cyanoethyl-2-phenylimidazole and 1- (2-cyanoethyl) -2-ethyl-4-4-methylimidazole; amine compounds such as dicyandiamide, benzyldimethylamine, 4- (dimethylamino) -N, N-dimethylbenzylamine, 4-methoxy-N, N-dimethylbenzylamine and 4-methyl-N, N-dimethylbenzylamine; hydrazine compounds such as dihydrazine adipate and dihydrazine sebacate; phosphorus compounds, such as triphenylphosphine; and so on.

In addition, examples of commercially available products may include 2MZ-A, 2MZ-OK, 2PHZ, 2P4BHZ and 2P4 MHZ (all trade names of imidazole compounds) manufactured by Shikoku Chemical Corporation, U-CAT3503N and U-CAT3502T (both trade names of block isocyanate compounds of dimethylamine) manufactured by San-Apro L td., DBU, DBN, U-CATA SA102 and U-CAT5002 (all of bicyclic amidine compounds and salts thereof), and the like.

However, usable heat curing catalysts are not limited to the above examples, and compounds known as heat curing catalysts of epoxy resins or oxetane compounds, or heat curing catalysts that promote the reaction between epoxy groups and/or oxetane groups and carboxyl groups may be used without particular limitation.

In addition, guanamine; acetoguanamine; benzoguanamine; melamine; and S-triazine derivatives such as 2, 4-diamino-6-methacryloyloxyethyl-S-triazine, 2-vinyl-4, 6-diamino-S-triazine-isocyanuric acid adduct and 2, 4-diamino-6-methacryloyloxyethyl-S-triazine-isocyanuric acid adduct.

The heat curing catalyst may be used in an appropriate amount in consideration of the curing degree of the epoxy resin. For example, the epoxy resin composition may include 0.1 wt% or more and 20 wt% or less, or 0.1 wt% or more and 10 wt% or less of a thermal curing catalyst.

The type of the epoxy curing agent may include amine compounds, acid anhydride compounds, amide compounds, phenol compounds, and the like. The amine compound may include diaminodiphenylmethane, diethylenetriamine, triethylenetetramine, diaminodiphenylsulfone, isophoronediamine, and the like. The acid anhydride compound may include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylnadic anhydride (methylnadic anhydride), hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, and the like. The amide compound may include dicyandiamide and a polyamide resin synthesized from a dimer of linoleic acid and ethylenediamine. The phenol compounds may include polyhydric phenols such as bisphenol a, bisphenol F, bisphenol S, fluorene bisphenol, and terpene diphenol; phenol resins prepared by condensation of phenols with aldehydes, ketones or dienes; modified products of phenols and/or phenol resins; halogenated phenols such as tetrabromobisphenol a and brominated phenol resins; and other imidazoles; BF 3-amine complex; and guanidine derivatives.

The epoxy curing agent may be used in an appropriate amount in consideration of mechanical characteristics of the molded film to be prepared. For example, the epoxy resin film may include the epoxy curing agent in an amount of 0.01 wt% or more and 10 wt% or less, or 0.1 wt% or more and 5 wt% or less.

The solvent may be used for the purpose of dissolving the epoxy resin composition and imparting a viscosity suitable for application of the composition. As specific examples of the solvent, ketones such as methyl ethyl ketone, cyclohexanone, and the like; aromatic hydrocarbons such as toluene, xylene, tetramethylbenzene, etc.; glycol ethers (cellosolves) such as ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol diethyl ether, triethylene glycol monoethyl ether, and the like; acetates such as ethyl acetate, butyl acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, dipropylene glycol monomethyl ether acetate, and the like; alcohols such as ethanol, propanol, ethylene glycol, propylene glycol, carbitol, and the like; aliphatic hydrocarbons such as octane, decane, etc.; petroleum solvents such as petroleum ether, naphtha, hydrogenated naphtha, solvent naphtha and the like; and amides such as dimethylacetamide, Dimethylformamide (DMF), and the like; these solvents may be used alone or in a combination of two or more thereof.

The solvent may be used in an appropriate amount in consideration of dispersibility, solubility or viscosity of the epoxy resin composition. For example, the epoxy resin composition may include a solvent in an amount of 0.1 wt% or more and 50 wt% or less, or 1 wt% or more and 30 wt% or less. When the amount of the solvent is too small, the viscosity of the epoxy resin composition may be increased, resulting in a decrease in coatability. When the amount of the solvent is too large, difficulties may be caused in the solvent drying process, resulting in an increase in the tackiness of the formed film.

2. Molded film for molding semiconductor

According to another embodiment of the present invention, there may be provided a molded film comprising a polymer containing a repeating unit represented by chemical formula 3 and a repeating unit represented by chemical formula 4; and 50% by weight or more and 90% by weight or less of an inorganic filler dispersed in the polymer.

Details of the inorganic filler contained in the molding film of another embodiment include those described above in the epoxy resin composition for molding a semiconductor of one embodiment.

The polymer may include both of the repeating units represented by chemical formulas 3 and 4, and may include a cured product of the epoxy resin of one embodiment. Thus, the physical properties achieved by each of the two repeating units can be achieved uniformly throughout the film.

Specifically, in the repeating unit represented by chemical formula 3 included in the polymer, C₄To C₅Each independently a cycloalkane having 3 to 10 carbon atoms, and L₃To L₄Each independently a direct bond or an alkylene group having 1 to 10 carbon atoms.

As described above, the repeating unit represented by chemical formula 3 included in the polymer does not include an unsaturated aliphatic functional group but includes a cyclic aliphatic functional group, and the epoxy polymer including the same may have a refractive index very similar to that of the silica filler itself used as the inorganic filler, thereby achieving uniform high transmittance in the molded film.

Preferably, in the repeating unit represented by chemical formula 3 included in the polymer, C₃To C₄Each independently cyclohexane having 6 carbon atoms, L₃Is a direct bond, and L₄Is an alkylene group having 1 to 5 carbon atoms (e.g., a methylene group having 1 carbon atom).

The repeating unit represented by chemical formula 3 may be more specifically a repeating unit represented by the following chemical formula 3-1.

[ chemical formula 3-1]

In chemical formula 3-1, L₃To L₄Can be the same as those described in chemical formula 3 aboveThe same is true.

The repeating unit represented by chemical formula 3 included in the polymer included in the molded film may be obtained by an epoxy crosslinking reaction of the epoxy polymer represented by chemical formula 1, and the heat resistance and mechanical characteristics may be improved by a crosslinked structure formed by the repeating unit represented by chemical formula 3.

On the other hand, in the repeating unit represented by chemical formula 4, C₆To C₈Each independently a cycloalkane having 3 to 10 carbon atoms, and L₅Is a direct bond or an alkylene group having 1 to 10 carbon atoms.

Preferably, in the repeating unit represented by chemical formula 4 included in the polymer, C₆To C₈Each independently cyclohexane having 6 carbon atoms, and L₅Is an alkylene group having 1 to 5 carbon atoms (e.g., a methylene group having 1 carbon atom).

As described above, the repeating unit represented by chemical formula 4 included in the polymer does not include an unsaturated aliphatic functional group but includes a cyclic aliphatic functional group, and the epoxy polymer including the same may have a refractive index very similar to that of the silica filler itself used as the inorganic filler, thereby achieving uniform high transmittance in the molded film.

The repeating unit represented by chemical formula 4 included in the polymer may be more specifically a repeating unit represented by the following chemical formula 4-1.

[ chemical formula 4-1]

In chemical formula 4-1, L₅The definitions of (a) may be the same as those described in chemical formula 4.

The repeating unit represented by chemical formula 4 included in the polymer included in the molded film may be obtained by an epoxy crosslinking reaction between the epoxy polymer represented by chemical formula 1 and the epoxy compound represented by chemical formula 2, and the solubility of a large amount of inorganic filler may be increased by a crosslinked structure formed by the repeating unit represented by chemical formula 4, so that visibility may be improved.

On the other hand, the polymer included in the molded film may further include a repeating unit represented by the following chemical formula 5.

[ chemical formula 5]

In chemical formula 5, C₉And C₁₀Each independently a cycloalkane having 3 to 10 carbon atoms, and L₆Is a direct bond or an alkylene group having 1 to 10 carbon atoms.

Preferably, in the repeating unit represented by chemical formula 5 included in the molded film, C₉And C₁₀Each independently cyclohexane having 6 carbon atoms, and L₆Is an alkylene group having 1 to 5 carbon atoms (e.g., a methylene group having 1 carbon atom).

The repeating unit represented by chemical formula 5 may be more specifically a repeating unit represented by the following chemical formula 5-1.

[ chemical formula 5-1]

In chemical formula 5-1, L₆The definitions of (a) may be the same as those described above in chemical formula 5.

When the polymer included in the molded film further includes the repeating unit represented by chemical formula 5 and the repeating units represented by chemical formulae 3 and 4, the repeating unit represented by chemical formula 4 may be crosslinked via the repeating unit represented by chemical formula 5. Specifically, at least two repeating units represented by chemical formula 4 may be crosslinked via a repeating unit represented by chemical formula 5.

In this way, the polymer may have excellent heat resistance and mechanical properties due to the formation of crosslinks between the repeating units present therein, and the coefficient of thermal expansion is low and thus improved warpage properties may be achieved.

More specifically, a structure in which the repeating unit represented by chemical formula 4 is crosslinked via the repeating unit represented by chemical formula 5 may be represented by chemical formula 6 below.

[ chemical formula 6]

In chemical formula 6, C₆To C₁₀Each independently a cycloalkane having 3 to 10 carbon atoms, and L₅And L₆Each independently a direct bond or an alkylene group having 1 to 10 carbon atoms. C₆To C₁₀And L₅And L₆The definitions of (b) may be the same as those described above in chemical formulas 3 to 5.

More specifically, the repeating unit represented by chemical formula 6 may be represented by the following chemical formula 6-1.

[ chemical formula 6-1]

In chemical formula 6-1, L₅And L₆The definitions of (b) may be the same as those described above in chemical formulas 3 to 5.

Meanwhile, in one embodiment, the polymer may include a reaction product between the epoxy polymer represented by chemical formula 1 and the epoxy compound represented by chemical formula 2. Details of the epoxy polymer represented by chemical formula 1 and the epoxy compound represented by chemical formula 2 include those described above in one embodiment.

That is, the molding film of another embodiment means a completely cured film obtained by coating, drying and curing the epoxy resin composition for molding a semiconductor of the above embodiment, and the polymer contained in the molding film may include a reaction product obtained by an epoxy crosslinking reaction of the epoxy polymer contained in the epoxy resin composition for molding a semiconductor and an epoxy compound.

In the coating step, conventional methods and apparatuses known to be useful for applying the resin composition may be used. For example, a comma coater, a knife coater, a lip coater, a bar coater, a die coater, a reverse coater, a transfer roll coater, a gravure coater, a spray coater, or the like can be used.

The drying temperature may be 50 ℃ or more and 130 ℃ or less, or 70 ℃ or more and 100 ℃ or less. Examples of the heat curing conditions are not particularly limited, and for example, the film may be subjected to heat curing in an oven of 140 ℃ or more and 200 ℃ or less for about 0.5 hour or more and 2 hours or less.

The molded film may include an inorganic filler in an amount of 50 wt% or more and 90 wt% or less, 60 wt% or more and 80 wt% or less, or 70 wt% or more and 90 wt% or less, based on the total weight of the molded film.

On the other hand, the transmittance (measured at 550 nm) of the molded film may be 60% or more and 90% or less, or 70% or more and 85% or less. Since the molded film has high transmittance in the above range, transparency is excellent, and visibility can be improved when applied to a semiconductor package.

Further, the modulus of the molded film (measured at 25 ℃) may be 10.0GPa or more and 20.0GPa or less, or 15.0GPa or more and 20.0GPa or less. Since the molded film has a high modulus within the above range, durability of the semiconductor package can be improved based on high mechanical characteristics when applied to the semiconductor package.

In another aspect, the molded film can have an average Coefficient of Thermal Expansion (CTE) measured over a temperature range of 0 ℃ to 50 ℃ of 1.00ppm/K to 25.00ppm/K, or 1.00ppm/K to 8.00 ppm/K. Since the mold film has a low coefficient of thermal expansion within the above range, when applied to a semiconductor package, the difference in coefficient of thermal expansion between the semiconductor substrates is reduced, and the durability of the semiconductor package can be improved, thereby reducing the warpage characteristics of the semiconductor package.

The thickness of the molded film is not particularly limited, and can be freely adjusted, for example, within a range of 0.01 μm or more and 1000 μm or less. When the thickness of the molded film is increased or decreased by a certain value, the physical properties measured in the molded film may be changed by a certain value. In the present invention, for example, the thickness for measuring the physical properties of the molded film may be 95 μm or more and 105 μm or less, or 98 μm or more and 102 μm or less.

On the other hand, the molded film may include a cyclic aliphatic epoxy resin matrix and an inorganic filler dispersed in the cyclic aliphatic epoxy resin, wherein an absolute value of a difference between a refractive index of the cyclic aliphatic epoxy resin matrix and a refractive index of the inorganic filler may be 0.1 or less, 0.01 or more and 0.1 or less, 0.05 or more and 0.1 or less, or 0.06 or more and 0.08 or less. Therefore, for the molded film, the refractive index of the cyclic aliphatic epoxy resin matrix and the refractive index of the inorganic filler have similar values in the state of the final cured product, and thus can have excellent optical properties, thereby achieving high transmittance.

The absolute value of the difference between the refractive index of the cyclic aliphatic epoxy resin matrix and the refractive index of the inorganic filler means a difference obtained by subtracting the smaller of the refractive index of the cyclic aliphatic epoxy resin matrix and the refractive index of the inorganic filler from the larger of the refractive index of the cyclic aliphatic epoxy resin matrix and the refractive index of the inorganic filler.

When the absolute value of the difference between the refractive index of the cyclic aliphatic epoxy resin matrix and the refractive index of the inorganic filler satisfies 0.1 or less, since the refractive index of the cyclic aliphatic epoxy resin matrix and the refractive index of the inorganic filler have similar values, the transmittance (measured at 550 nm) may be 60% or more and 90% or less, or 70% or more and 85% or less. Since the molded film has high transmittance in the above range, transparency is excellent, and thus visibility can be improved when applied to a semiconductor package.

On the other hand, when the absolute value of the difference between the refractive index of the cyclic aliphatic epoxy resin matrix and the refractive index of the inorganic filler in the molded film exceeds 0.1 and excessively increases, since the refractive index of the cyclic aliphatic epoxy resin matrix and the refractive index of the inorganic filler are significantly different values, the transmittance (measured at 550 nm) decreases to less than 60%, and the transparency decreases. Therefore, there is a problem of poor visibility when applied to a semiconductor package.

In particular, the absolute value of the difference between the refractive index of the cyclic aliphatic epoxy resin matrix having a similar value in the molded film and the refractive index of the inorganic filler is 0.1 or less because the cyclic aliphatic epoxy resin not containing an unsaturated aliphatic group as the binder resin can be used to achieve optical properties superior to those of general epoxy resins.

Therefore, in the molded film, it is easy to match the refractive index of the cyclic aliphatic epoxy resin matrix with the refractive index of the silica filler itself serving as the inorganic filler, so that high transmittance can be uniformly achieved in the formed film.

The cyclic aliphatic epoxy resin matrix has a refractive index of 1.6 or less, 1.4 or more and 1.6 or less, 1.5 or more and 1.55 or less, or 1.51 or more and 1.53 or less. Further, the inorganic filler has a refractive index of 1.5 or less, 1.3 or more and 1.5 or less, 1.4 or more and 1.5 or less, 1.42 or more and 1.48 or less, or 1.44 or more and 1.46 or less.

Details of the inorganic filler contained in the molding film include those described above in the epoxy resin composition for molding a semiconductor of one embodiment.

The cycloaliphatic epoxy resin matrix includes a cycloaliphatic epoxy resin containing a cycloaliphatic functional group in the molecular structure or a cured product of the cycloaliphatic epoxy resin. For the cyclic aliphatic epoxy resin, all the above-described matters about the inclusion of the polymer in the above-described molded film can be equally applied.

In addition, the cyclic aliphatic epoxy resin matrix may be formed by photo-curing or thermal-curing the epoxy resin composition for molding a semiconductor of the above-described one embodiment by light irradiation such as UV.

Unlike typical epoxy resins, the cyclic aliphatic epoxy resin contained in the cyclic aliphatic epoxy resin matrix does not contain an unsaturated aliphatic functional group, and thus it may have a refractive index very similar to that of the silica filler itself used as an inorganic filler, thereby uniformly achieving high transmittance in a molded film.

Accordingly, the cyclic aliphatic epoxy resin matrix may include a cyclic aliphatic epoxy resin containing a repeating unit represented by chemical formula 3 and a repeating unit represented by chemical formula 4 or a cured product thereof. In addition, the cyclic aliphatic epoxy resin may include a repeating unit represented by chemical formula 5. In addition, the cyclic aliphatic epoxy resin may include a repeating unit represented by chemical formula 6 having a structure in which the repeating unit represented by chemical formula 4 is crosslinked via the repeating unit represented by chemical formula 5.

The details of chemical formula 3, chemical formula 4, chemical formula 5, and chemical formula 6 include those described above with respect to the polymer included in the molded film.

The details of the production method, transmittance, modulus, thermal expansion coefficient and thickness of the molded film comprising a cyclic aliphatic epoxy resin matrix and an inorganic filler dispersed in the cyclic aliphatic epoxy resin, in which the absolute value of the difference between the refractive index of the cyclic aliphatic epoxy resin matrix and the refractive index of the inorganic filler is 0.1 or less, are the same as those described above with respect to the molded film comprising a polymer containing a repeating unit represented by chemical formula 3 and a repeating unit represented by chemical formula 4 and 50% by weight or more and 90% by weight or less of the inorganic filler dispersed in the polymer.

On the other hand, the cyclic aliphatic epoxy resin matrix may include a cyclic aliphatic epoxy resin or a cured product thereof including a reaction product between the epoxy polymer represented by chemical formula 1 of one embodiment and the epoxy compound represented by chemical formula 2 of one embodiment. Details of the epoxy polymer represented by chemical formula 1 and the epoxy compound represented by chemical formula 2 include those described above in one embodiment.

The molded film may include 50 wt% or more and 90 wt% or less, 60 wt% or more and 80 wt% or less, or 70 wt% or more and 90 wt% or less of the inorganic filler, based on the total weight of the molded film.

3. Semiconductor package

According to another embodiment of the present invention, a semiconductor package including a semiconductor sealed with the mold film of another embodiment can be provided.

That is, the mold film of another embodiment may be used to seal a semiconductor, and the semiconductor may include a circuit board and a semiconductor chip. The circuit board includes a Printed Circuit Board (PCB), a semiconductor package substrate, a flexible semiconductor package (FPCB) substrate, and the like.

More specifically, the molding film of this alternative embodiment may be laminated on a semiconductor package substrate to seal a semiconductor chip or a circuit board mounted on the circuit board. Thus, the semiconductor package can prevent the circuit board or the semiconductor chip from being exposed to the outside through the mold film, thereby achieving high reliability.

Advantageous effects

According to the present invention, it is possible to provide an epoxy resin composition for molding a semiconductor, which has excellent heat resistance and mechanical properties while having a low thermal expansion coefficient and thus exhibiting improved warpage characteristics and also has improved visibility, and a molded film and a semiconductor package using such an epoxy resin composition for molding a semiconductor.

Detailed Description

Hereinafter, the action and effect of the present invention will be described in more detail by way of examples. However, these examples are given for illustrative purposes only, and the scope of the present invention is not intended to be limited to or by these examples.

Production examples and comparative examples preparation of epoxy resin

[ preparation example 1]

A solid polymer represented by the following chemical formula a (weight average molecular weight: 1874g/mol) and a liquid compound represented by the following chemical formula B [ (3',4' -epoxycyclohexane) methyl 3, 4-epoxycyclohexyl carboxylate (Daicel, Celloxide2021P) were mixed in a weight ratio of 5:4 to prepare an epoxy resin.

[ chemical formula A ]

In formula A, R is butyl, and n is an integer of 15.

[ chemical formula B ]

[ preparation example 2]

An epoxy resin was prepared in the same manner as in preparation example 1, except that the weight ratio of the solid polymer represented by formula A to the liquid compound represented by formula B [ (3',4' -epoxycyclohexane) methyl 3, 4-epoxycyclohexylcarboxylate (Daicel, Celloxide2021P) ] was changed to 6:4

Comparative preparation example 1

An epoxy resin was prepared by mixing 31 parts by weight of a bisphenol F type epoxy resin (product name: EpotohtoYDF-8170, epoxy equivalent: 160, manufactured by Tohto Kasei) and 78.6 parts by weight of (3',4' -epoxycyclohexane) methyl 3, 4-epoxycyclohexyl carboxylate) (Daicel, Celloxide 2021P).

[ examples and comparative examples ]

[ example 1]

(1) Preparation of epoxy resin composition for molding semiconductor

The components were mixed using 25 wt% of the epoxy resin obtained in preparation example 1 as a binder resin, 60 wt% of silica (average particle diameter of 5 μm) as a filler, 2 wt% of 2-phenylimidazole as a thermal curing catalyst, 3 wt% of a leveling agent, and 10 wt% of MEK as a solvent, and the mixture was stirred and then dispersed with a three-roll mill apparatus to prepare an epoxy resin composition for molding a semiconductor.

(2) Preparation of molded film/semiconductor packages

A semiconductor package substrate having a semiconductor chip mounted thereon was placed in a molding apparatus including a mold having a predetermined shape, and the epoxy resin composition for molding a semiconductor obtained above was supplied into the mold and then heated and cured at 175 ℃ for 1 hour, thereby manufacturing a semiconductor package including a molding film having a thickness of 100 μm.

On the other hand, the semiconductor package substrate on which the semiconductor chip was mounted used a semiconductor package substrate on which the semiconductor chip was mounted in which a copper-clad laminate (CC L) L G-T-500GA of L G chem. L td. having a thickness of 0.1mm and a copper thickness of 12 μm was cut into a substrate 5cm wide and 5cm long and the semiconductor chip was mounted on the surface.

In addition, a repeating unit structure represented by the following chemical formula C and chemical formula D is included in the molded film.

[ chemical formula C ]

[ chemical formula D ]

[ example 2]

An epoxy resin composition for molding a semiconductor, a molding film and a semiconductor package were prepared in the same manner as in example 1, except that the epoxy resin obtained in preparation example 2 was used as a binder resin.

[ example 3]

The components were mixed using 13 wt% of the epoxy resin obtained in preparation example 1 as a binder resin, 80 wt% of silica (average particle diameter of 5 μm) as a filler, 1 wt% of 2-phenylimidazole as a thermal curing catalyst, 1 wt% of a leveling agent, and 5 wt% of MEK as a solvent, and the mixture was stirred and then dispersed with a three-roll mill apparatus to prepare an epoxy resin composition for molding a semiconductor. Subsequently, an epoxy resin composition for molding a semiconductor, a molding film and a semiconductor package were prepared in the same manner as in example 1.

[ example 4]

An epoxy resin composition for molding a semiconductor, a molding film and a semiconductor package were prepared in the same manner as in example 3, except that the epoxy resin obtained in preparation example 2 was used as a binder resin.

Comparative example 1

An epoxy resin composition for molding a semiconductor, a molding film and a semiconductor package were prepared in the same manner as in example 1, except that the epoxy resin obtained in comparative preparation example 1 was used as a binder resin.

Comparative example 2

An epoxy resin composition for molding a semiconductor, a molding film and a semiconductor package were prepared in the same manner as in example 3, except that the epoxy resin obtained in comparative preparation example 1 was used as a binder resin.

[ test examples ]

1. Evaluation of Heat-resistant reliability

The semiconductor package samples obtained in examples 1 to 4 and comparative examples 1 and 2 were left to stand in a pressure cooker test chamber at 146 ℃ and 100% RH for 14 hours, and then taken out to remove moisture on the surface. The test specimen was floated with its film side facing up in a lead bath set at 288 ℃. The appearance of the test sample was inspected to determine whether the film was peeled or deformed, and the heat-resistant reliability was evaluated.

OK: does not crack under solder floating (solder floating) at 288 DEG C

NG: solder float crack at 288 DEG C

2. Evaluation of modulus

The molded films having a thickness of 100 μm obtained in examples 1 to 4 and comparative examples 1 and 2 were cut into a width of 5.3mm and a length of 17.2mm to 17.9mm to prepare test samples. Then, the modulus was measured using TA800 DMA at a temperature from-20 ℃ to 300 ℃ at a heating rate of 10 ℃/min under conditions of a frequency of 1Hz, an amplitude of 5 μm and a measurement of the static force of 0.1N. The modulus values at room temperature (25 ℃) are shown in Table 1 below.

3. Evaluation of transparency

The molded films having a thickness of 100 μm obtained in examples 1 to 4 and comparative examples 1 and 2 were cut into a width of 3cm and a length of 3cm to prepare test samples, and the transmittance was measured at a basis of 550nm using a UV-3600Plus instrument from SHIMADZU.

4. Evaluation of warpage characteristics

The molded films having a thickness of 100 μm obtained in examples 1 to 4 and comparative examples 1 and 2 were cut into a width of 4.8mm and a length of 16mm to prepare test samples, and then a Coefficient of Thermal Expansion (CTE) was measured at a temperature of-20 ℃ to 300 ℃ at a heating rate of 5 ℃/min under a measurement static force of 0.1N using Q400EM of TA. The average value of the Coefficient of Thermal Expansion (CTE) measured in the temperature range of 0 to 50 c was calculated and shown in table 1 below.

The measurement results of experimental examples 1 to 4 are shown in table 1 below.

5. Evaluation of refractive index

For the epoxy resin as a matrix of the molded film having a thickness of 100 μm obtained in examples 1 to 4 and comparative examples 1 and 2 and the filler dispersed therein, refractive indexes were respectively measured using a prism coupler manufactured by Sairon Technology. The results are shown in Table 2 below.

The measurement results of experimental example 5 are shown in table 2 below.

[ Table 1]

Results of measurement of Experimental examples 1 to 4

As shown in table 1, it can be confirmed that the molded films of examples 1 to 4 obtained from the composition comprising 60 wt% or more and 80 wt% or less of the silica filler and the epoxy resin synthesized in preparation example 1 or preparation example 2 exhibited high transmittance of 72.55% to 83.23% at 550nm, and thus the transparency was greatly improved.

On the other hand, the molded films of comparative examples 1 and 2 obtained from the composition comprising 60% by weight or more and 80% by weight or less of the silica filler and the epoxy resin synthesized in comparative preparation example 1 exhibited a transmittance of 49.13% to 59.11% at 550nm, which is significantly lower than that of example 1, thereby determining that the transparency is poor.

As described above, it can be confirmed that the molded films of examples 1 to 4 exhibited significantly improved characteristics in transparency as compared to the molded films of comparative examples 1 and 2, and also had excellent mechanical characteristics according to a high modulus at a level equal to or higher than that of the comparative example, and excellent warpage characteristics according to a low coefficient of thermal expansion.

In particular, the molded films of examples 3 and 4 obtained from the composition comprising 80 wt% of the silica filler and the synthetic epoxy resin of preparation example 1 or preparation example 2 exhibited a Coefficient of Thermal Expansion (CTE) of 4.62 to 5.68ppm/K, which is significantly lower than that of the comparative example, while having a modulus of 17.0 to 18.5GPa, which is significantly higher than that of the comparative example, thereby confirming that the effect is improved due to the increased content of the silica filler.

[ Table 2]

Measurement results of Experimental example 5

As shown in table 2, it was confirmed that in the molded films of examples 1 to 4, the absolute value of the difference between the refractive index of the epoxy resin matrix and the refractive index of the inorganic filler was as small as 0.06 to 0.08, and the epoxy resin matrix and the inorganic filler had almost the same refractive index.

On the other hand, in the molded films of comparative examples 1 and 2, the absolute value of the difference between the refractive index of the epoxy resin matrix and the refractive index of the inorganic filler was 0.17, which is greatly increased as compared with the examples, thereby confirming that the refractive indices of the epoxy resin matrix and the inorganic filler are different from each other.

As described above, the molded films of examples 1 to 4 can uniformly achieve high transmittance in the molded film by adjusting the refractive index of the epoxy resin matrix and the refractive index of the inorganic filler to similar levels.