阅读说明：本技术 振动传感器和背电极式振动传感器 (Vibration sensor and back electrode type vibration sensor ) 是由 杨进 林志伟 于 2021-07-29 设计创作，主要内容包括：本发明提出了一种振动传感器和背电极式振动传感器,其中,振动传感器由上绝缘层、下绝缘层、环形垫层、上导电层、下导电层和微粒状的振动体组成；背电极式振动传感器由上表层、下表层、环形垫层、上电极层、下电极层、上内绝缘层、下内绝缘层和微粒状的振动体组成；本发明的有益技术效果是：提出了一种振动传感器和背电极式振动传感器,该方案给出了一种全新的振动传感方式,传感器结构简单,易于制造,并且传感器能够自供能,再有,测试表明,传感器的振动频率响应范围可达3-170kHz,具有宽频响应能力,能够满足诸多实际应用的需求。(The invention provides a vibration sensor and a back electrode type vibration sensor, wherein the vibration sensor consists of an upper insulating layer, a lower insulating layer, an annular cushion layer, an upper conducting layer, a lower conducting layer and a particle-shaped vibration body; the back electrode type vibration sensor consists of an upper surface layer, a lower surface layer, an annular cushion layer, an upper electrode layer, a lower electrode layer, an upper inner insulating layer, a lower inner insulating layer and a particle-shaped vibration body; the beneficial technical effects of the invention are as follows: the scheme provides a novel vibration sensing mode, the sensor is simple in structure and easy to manufacture, the sensor can supply energy by itself, tests show that the vibration frequency response range of the sensor can reach 3-170kHz, the sensor has broadband response capability, and requirements of various practical applications can be met.)

1. A vibration sensor, characterized by: the vibration sensor consists of an upper insulating layer (1), a lower insulating layer (2), an annular cushion layer (3), an upper conductive layer (4), a lower conductive layer (5) and a particle-shaped vibration body (6);

the upper insulating layer (1), the annular cushion layer (3) and the lower insulating layer (2) are sequentially laminated together; the upper conducting layer (4) is arranged on the inner wall of the upper insulating layer (1); the lower conducting layer (5) is arranged on the inner wall of the lower insulating layer (2); a gap is reserved between the upper conducting layer (4) and the lower conducting layer (5);

a vibration cavity is formed in a space surrounded by the annular cushion layer (3), the upper conductive layer (4) and the lower conductive layer (5), and the vibration body (6) is filled in the vibration cavity; the particle size of single particles in the vibrating body (6) is millimeter, micron or nanometer;

the vibrator (6) and the upper conductive layer (4) have different triboelectric sequences, and the vibrator (6) and the lower conductive layer (5) have different triboelectric sequences.

2. The vibration sensor according to claim 1, wherein: the vibrator (6) is formed by mixing conductive particles and insulating particles; the conductive particles are processed by single or multiple conductive materials; the insulating microparticles are processed from a single or multiple insulating materials.

3. The vibration sensor according to claim 1 or 2, wherein: the upper insulating layer (1) and the lower insulating layer (2) are both made of rigid insulating materials.

4. The vibration sensor according to claim 1 or 2, wherein: the upper insulating layer (1) and the lower insulating layer (2) are both made of flexible insulating materials.

5. The vibration sensor according to claim 1 or 2, wherein: the thickness of the annular cushion layer (3) is 0.01-3 mm.

6. A back electrode type vibration sensor characterized in that: the back electrode type vibration sensor consists of an upper surface layer (7), a lower surface layer (8), an annular cushion layer (3), an upper electrode layer (9), a lower electrode layer (10), an upper inner insulating layer (11), a lower inner insulating layer (12) and a particle-shaped vibration body (6);

the upper surface layer (7), the annular cushion layer (3) and the lower surface layer (8) are sequentially laminated together; an upper electrode layer (9) is arranged on the inner wall of the upper surface layer (7), and an upper inner insulating layer (11) is laminated on the lower side surface of the upper electrode layer (9); a lower electrode layer (10) is arranged on the inner wall of the lower surface layer (8), and a lower inner insulating layer (12) is laminated on the upper side surface of the lower electrode layer (10); a gap is reserved between the upper inner insulating layer (11) and the lower inner insulating layer (12);

a vibration cavity is formed in a space surrounded by the annular cushion layer (3), the upper inner insulating layer (11) and the lower inner insulating layer (12), and the vibration body (6) is filled in the vibration cavity; the particle size of single particles in the vibrating body (6) is millimeter, micron or nanometer;

the upper surface layer (7) and the lower surface layer (8) are both made of insulating materials;

the vibrating body (6) and the upper inner insulating layer (11) have different triboelectric sequences, and the vibrating body (6) and the lower inner insulating layer (12) have different triboelectric sequences.

7. The back electrode type vibration sensor according to claim 6, wherein: the vibrator (6) is formed by mixing conductive particles and insulating particles; the conductive particles are processed by single or multiple conductive materials; the insulating microparticles are processed from a single or multiple insulating materials.

8. The back electrode type vibration sensor according to claim 6, wherein: the upper surface layer (7) and the lower surface layer (8) are both made of rigid insulating materials.

9. The back electrode type vibration sensor according to claim 6 or 7, wherein: the upper surface layer (7) and the lower surface layer (8) are both made of flexible insulating materials.

10. The back electrode type vibration sensor according to claim 6 or 7, wherein: the thickness of the annular cushion layer (3) is 0.01-3 mm.

Technical Field

The invention relates to a friction nano power generation technology, in particular to a vibration sensor and a back electrode type vibration sensor.

Background

Vibration sensors (especially between a few kHz to >100 kHz) are very popular in various fields, such as structural health monitoring, environmental monitoring, medical diagnostics, human-computer interaction, and the internet of things. Existing vibration sensors (e.g., piezoelectric, capacitive, optical, and electromagnetic sensors) have been hampered by their use in a wide variety of practical applications due to their relatively low frequency vibrational response, narrow operating frequency range, and operational complexity. Capacitive vibration sensors have been widely commercialized, but there is operational complexity in signal detection. Optical vibration sensors exhibit high sensitivity but are not self-powered and the associated monitoring systems are complex because they typically require additional equipment (e.g., light sources and photodetectors) to generate and convert optical signals into electrical signals. Electromagnetic vibration sensors are self-powered but are typically bulky due to the use of large capacity magnetic elements. Piezoelectric vibration sensors are self-powered but are limited by the narrow operating frequency range and the complexity of the manufacturing process. The friction nano generator brings a new self-powered vibration sensing technology due to the unique working principle. Although the skilled person has long worked on developing self-powered vibration sensors based on tribo-nanogenerators, the relatively low frequency vibration response range (compared to frequency ranges of a few kHz to >100 kHz) will result in a lack of explicit details of the vibration signal in the high frequency region and prevent further practical implementation thereof. Therefore, it remains extremely challenging to develop self-powered vibration sensors with high frequency vibration response capability and wide operating frequency range to meet the needs of a wide range of practical applications.

Disclosure of Invention

Aiming at the problems in the background art, the invention provides a vibration sensor, which has the following structure: the vibration sensor consists of an upper insulating layer, a lower insulating layer, an annular cushion layer, an upper conductive layer, a lower conductive layer and a particle-shaped vibration body;

the upper insulating layer, the annular cushion layer and the lower insulating layer are sequentially laminated together; the upper conducting layer is arranged on the inner wall of the upper insulating layer; the lower conducting layer is arranged on the inner wall of the lower insulating layer; a gap is reserved between the upper conductive layer and the lower conductive layer; in specific implementation, the upper insulating layer, the upper conducting layer, the annular cushion layer, the lower insulating layer and the lower conducting layer can be directly laminated together in sequence for convenient manufacture; in the structure shown in fig. 1, the upper conductive layer is located in the inner hole of the annular cushion layer, and the adoption of the structure needs to control the profile of the upper conductive layer to match with the profile of the inner hole of the annular cushion layer, so that the manufacturing complexity is increased to a certain extent, but the exposure of an interface can be effectively reduced, and the interface is protected;

a vibration cavity is formed in a space surrounded by the annular cushion layer, the upper conductive layer and the lower conductive layer, and the vibration body is filled in the vibration cavity; the particle size of single particles in the vibrating body is millimeter, micron or nanometer level;

the vibrating body and the upper conductive layer have different triboelectric sequences, and the vibrating body and the lower conductive layer have different triboelectric sequences.

The working principle of the vibration sensor is as follows: the vibration sensor is arranged on the surface of a monitored object, when the monitored object vibrates, the vibration effect can be transmitted to the vibrating body through the structural part of the vibration sensor, so that the vibrating body vibrates, a large number of particles in the vibrating body can be periodically contacted and separated with the upper insulating layer and the lower insulating layer in the vibrating process of the vibrating body, the vibration sensor can generate alternating current output under the coupling effect of friction electrification and electrostatic induction, and the vibration condition of the monitored object can be known by detecting an electric signal.

Preferably, the vibrating body is formed by mixing conductive particles and insulating particles; the conductive particles are processed by single or multiple conductive materials; the insulating microparticles are processed from a single or multiple insulating materials. With this preferred embodiment, the conductive particles and the insulating particles can be frictionally charged with each other even when the vibrating body vibrates, thereby further improving the electrical output of the sensor.

Preferably, the upper insulating layer and the lower insulating layer are both made of rigid insulating materials. The vibration sensor obtained by the method has good structural strength and vibration sensitivity.

Preferably, the upper insulating layer and the lower insulating layer are both made of flexible insulating materials. The obtained vibration sensor can be bent in shape and is suitable for being installed on monitored objects (such as pipelines, bracelets or clothes and the like) with irregular shapes or curved shapes.

In some special scenarios, one of the upper insulating layer and the lower insulating layer can be made of a rigid insulating material, and the other can be made of a flexible insulating material.

Preferably, the thickness of the annular cushion layer is 0.01-3 mm.

The invention also provides a back electrode type vibration sensor, which has the following structure: the back electrode type vibration sensor consists of an upper surface layer, a lower surface layer, an annular cushion layer, an upper electrode layer, a lower electrode layer, an upper inner insulating layer, a lower inner insulating layer and a particle-shaped vibration body;

the upper surface layer, the annular cushion layer and the lower surface layer are sequentially laminated together; the upper electrode layer is arranged on the inner wall of the upper surface layer, and the upper inner insulating layer is laminated on the lower side surface of the upper electrode layer; the lower electrode layer is arranged on the inner wall of the lower surface layer, and the lower inner insulating layer is laminated on the upper side surface of the lower electrode layer; a gap is reserved between the upper inner insulating layer and the lower inner insulating layer; in specific implementation, for convenience of manufacture, the upper surface layer, the upper electrode layer, the upper inner insulating layer, the annular cushion layer, the lower inner insulating layer, the lower electrode layer and the lower surface layer can be sequentially laminated together; in the structure shown in fig. 2, the upper electrode layer and the upper inner insulating layer are located in the inner hole of the annular pad layer, and the adoption of the structure needs to control the profiles of the upper electrode layer and the upper inner insulating layer to match with the profile of the inner hole of the annular pad layer, so that the manufacturing complexity is increased to a certain extent, but the exposure of an interface can be effectively reduced, and the interface is protected;

a vibration cavity is formed in a space surrounded by the annular cushion layer, the upper inner insulating layer and the lower inner insulating layer, and the vibration body is filled in the vibration cavity; the particle size of single particles in the vibrating body is millimeter, micron or nanometer level;

the upper surface layer and the lower surface layer are both made of insulating materials;

the vibrating body and the upper inner insulating layer have different triboelectric sequences, and the vibrating body and the lower inner insulating layer have different triboelectric sequences.

The working principle of the back electrode type vibration sensor is similar to that of the vibration sensor, and the difference between the back electrode type vibration sensor and the vibration sensor is that the back electrode type vibration sensor adopts a back electrode type structure formed by an electrode layer and an inner insulating layer.

Similarly to the vibration sensor solution, the vibration body of the back electrode type vibration sensor may also adopt the following preferred solutions: the vibrator is formed by mixing conductive particles and insulating particles; the conductive particles are processed by single or multiple conductive materials; the insulating microparticles are processed from a single or multiple insulating materials.

Similarly to the vibration sensor solution, the following preferred solutions can also be adopted for the upper surface layer and the lower surface layer of the back electrode type vibration sensor: the upper surface layer and the lower surface layer are both made of rigid insulating materials.

Similarly to the vibration sensor solution, the following preferred solutions can also be adopted for the upper surface layer and the lower surface layer of the back electrode type vibration sensor: the upper surface layer and the lower surface layer are both made of flexible insulating materials.

In some special scenes, one of the upper surface layer and the lower surface layer can be made of rigid insulating materials, and the other can be made of flexible insulating materials.

Similarly to the vibration sensor solution, the following preferred solutions can also be adopted for the annular cushion of the back electrode type vibration sensor: the thickness of the annular cushion layer is 0.01-3 mm.

The beneficial technical effects of the invention are as follows: the scheme provides a novel vibration sensing mode, the sensor is simple in structure and easy to manufacture, the sensor can supply energy by itself, tests show that the vibration frequency response range of the sensor can reach 3-170kHz, the sensor has broadband response capability, and requirements of various practical applications can be met.

Drawings

FIG. 1 is a schematic cross-sectional view of a vibration sensor;

FIG. 2 is a schematic cross-sectional view of a back electrode type vibration sensor;

the names corresponding to each mark in the figure are respectively: the vibrating body comprises an upper insulating layer 1, a lower insulating layer 2, an annular cushion layer 3, an upper conductive layer 4, a lower conductive layer 5, a vibrating body 6, an upper surface layer 7, a lower surface layer 8, an annular cushion layer 3, an upper electrode layer 9, a lower electrode layer 10, an upper inner insulating layer 11 and a lower inner insulating layer 12.

Detailed Description

A vibration sensor, its innovation lies in: the vibration sensor consists of an upper insulating layer 1, a lower insulating layer 2, an annular cushion layer 3, an upper conducting layer 4, a lower conducting layer 5 and a particle-shaped vibrating body 6;

the upper insulating layer 1, the annular cushion layer 3 and the lower insulating layer 2 are sequentially laminated together; the upper conductive layer 4 is disposed on the inner wall of the upper insulating layer 1; the lower conductive layer 5 is arranged on the inner wall of the lower insulating layer 2; a gap is left between the upper conductive layer 4 and the lower conductive layer 5; in specific implementation, the annular cushion layer 3 can adopt a square, round or triangular gasket or backing ring, if necessary, a gasket or backing ring with a special-shaped structure can be adopted, and the material can be plastic material or ceramic material; in specific implementation, the upper conductive layer 4 and the lower conductive layer 5 can be respectively formed by spraying conductive materials on the upper insulating layer 1 and the lower insulating layer 2 through a spraying process;

a vibration cavity is formed in a space surrounded by the annular cushion layer 3, the upper conductive layer 4 and the lower conductive layer 5, and the vibration body 6 is filled in the vibration cavity; the particle size of single particles in the vibrating body 6 is millimeter, micron or nanometer;

the vibrator 6 and the upper conductive layer 4 have different triboelectric series, and the vibrator 6 and the lower conductive layer 5 have different triboelectric series.

Further, the vibrator 6 is formed by mixing conductive particles and insulating particles; the conductive particles are processed by single or multiple conductive materials; the insulating microparticles are processed from a single or multiple insulating materials. In specific implementation, the insulating particles can be made of plastics (such as PET, PTFE, and the like) or insulating ceramics (such as alumina, and the like), and the conductive particles can be made of metals (such as Ag, Cu, Fe, and the like) or carbon;

further, the upper insulating layer 1 and the lower insulating layer 2 are made of rigid insulating materials, such as ceramics.

Further, the upper insulating layer 1 and the lower insulating layer 2 are made of flexible insulating materials, such as PET, PTFE or PDMS.

Further, the thickness of the annular cushion layer 3 is 0.01-3 mm.

A back electrode type vibration sensor is characterized in that: the back electrode type vibration sensor consists of an upper surface layer 7, a lower surface layer 8, an annular cushion layer 3, an upper electrode layer 9, a lower electrode layer 10, an upper inner insulating layer 11, a lower inner insulating layer 12 and a particle-shaped vibration body 6;

the upper surface layer 7, the annular cushion layer 3 and the lower surface layer 8 are sequentially laminated together; an upper electrode layer 9 is provided on the inner wall of the upper surface layer 7, and an upper internal insulation layer 11 is laminated on the lower side surface of the upper electrode layer 9; a lower electrode layer 10 is provided on the inner wall of the lower surface layer 8, and a lower internal insulation layer 12 is laminated on the upper side surface of the lower electrode layer 10; a gap is reserved between the upper inner insulating layer 11 and the lower inner insulating layer 12; in specific implementation, the annular cushion layer 3 can adopt a square, round or triangular gasket or backing ring, if necessary, a gasket or backing ring with a special-shaped structure can be adopted, and the material can be plastic material or ceramic material; in specific implementation, the upper electrode layer 9 and the lower electrode layer 10 can be respectively formed by spraying conductive materials on the upper inner insulating layer 11 and the lower inner insulating layer 12 through a spraying process;

a vibration cavity is formed in a space surrounded by the annular cushion layer 3, the upper inner insulating layer 11 and the lower inner insulating layer 12, and the vibration body 6 is filled in the vibration cavity; the particle size of single particles in the vibrating body 6 is millimeter, micron or nanometer;

the upper surface layer 7 and the lower surface layer 8 are both made of insulating materials;

the vibrator 6 and the upper inner insulating layer 11 have different triboelectric series, and the vibrator 6 and the lower inner insulating layer 12 have different triboelectric series.

Further, the vibrator 6 is formed by mixing conductive particles and insulating particles; the conductive particles are processed by single or multiple conductive materials; the insulating microparticles are processed from a single or multiple insulating materials. In specific implementation, the insulating particles can be made of plastics (such as PET, PTFE, and the like) or insulating ceramics (such as alumina, and the like), and the conductive particles can be made of metals (such as Ag, Cu, Fe, and the like) or carbon;

further, the upper surface layer 7 and the lower surface layer 8 are made of rigid insulating materials, such as ceramics.

Further, the upper surface layer 7 and the lower surface layer 8 are made of flexible insulating materials, such as PET, PTFE or PDMS.

Further, the thickness of the annular cushion layer 3 is 0.01-3 mm.

When the sensor is specifically implemented, the sensor can be used for structural health monitoring (such as automobile engine monitoring, rail fracture detection, geological exploration, pipeline leakage monitoring and the like), and when the upper insulating layer and the lower insulating layer or the upper insulating layer and the lower insulating layer are made of flexible insulating materials, the sensor can be better attached to the surface of a pipeline to monitor pipeline leakage, and the sensor can also be arranged on a bracelet to serve as a wearing device to sense vibration such as voice.

The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention. Such as variations in the shape, material, and dimensions of the various components.

It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. The invention is not described in detail in order to avoid unnecessary repetition. In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.