阅读说明：本技术 一种陶瓷基板的金属化方法 (Metallization method of ceramic substrate ) 是由 姜永京 刘南柳 王�琦 张国义 徐忱文 于 2019-01-09 设计创作，主要内容包括：本发明涉及一种陶瓷基板的金属化方法,包括如下步骤：首先,根据预设的导电线路参数在陶瓷基板表面进行图案化处理以在陶瓷基板表面形成有预设深度与宽度的线路图案；然后,在经过图案化处理的陶瓷基板表面制备过渡金属层和加厚金属层；之后,将陶瓷基板表面的非线路图案部分的金属层除去,以得到填充于陶瓷基板内的导电金属线路,进行表面处理后,最终得到平整光滑的高精度陶瓷线路板；本发明通过预先在陶瓷基板上制备预设深度和宽度的线路图案,将线路图案深入到陶瓷基板内部,可高精度控制金属化过程中的导电金属线路的宽度与厚度,从而得到高精细化导电金属线路,同时,本发明的导电金属线路填充于陶瓷基板的线路图案内也提高了散热效率。(The invention relates to a metallization method of a ceramic substrate, which comprises the following steps: firstly, patterning the surface of a ceramic substrate according to preset conductive circuit parameters to form a circuit pattern with preset depth and width on the surface of the ceramic substrate; then, preparing a transition metal layer and a thickened metal layer on the surface of the ceramic substrate subjected to patterning treatment; then, removing the metal layer of the non-circuit pattern part on the surface of the ceramic substrate to obtain a conductive metal circuit filled in the ceramic substrate, and finally obtaining a flat and smooth high-precision ceramic circuit board after surface treatment; according to the invention, the circuit pattern with the preset depth and width is prepared on the ceramic substrate in advance, the circuit pattern is deep into the ceramic substrate, the width and thickness of the conductive metal circuit in the metallization process can be controlled at high precision, so that the high-precision conductive metal circuit is obtained, and meanwhile, the conductive metal circuit is filled in the circuit pattern of the ceramic substrate, so that the heat dissipation efficiency is improved.)

1. A method for metallizing a ceramic substrate, comprising the steps of:

k1, carrying out patterning treatment on the surface of the ceramic substrate according to preset conductive circuit parameters to form a circuit pattern with preset depth and width on the surface of the ceramic substrate;

k2, preparing a transition metal layer on the surface of the ceramic substrate subjected to the patterning treatment in the step K1;

k3, forming a thickened metal layer on the surface of the ceramic substrate with the obtained transition metal layer by an upper plating mode;

k4, completely removing the transition metal layer and the thickened metal layer on the non-circuit pattern part of the surface of the ceramic substrate to obtain a conductive metal circuit filled in the ceramic substrate;

k5, carrying out surface treatment on the conductive metal circuit in the step K4 to form a packaging substrate on the surface of the conductive metal layer, and finally obtaining the flat and smooth high-precision ceramic circuit board.

2. The method of claim 1, wherein the patterning process of step K1 includes, but is not limited to, a combination of one or more of a laser marking process, a chemical etching process, a photolithography process, a stamping process, and a grinding process.

3. The method of claim 1, wherein the circuit pattern of the patterning process in step K1 includes but is not limited to a desired circuit pattern or a desired via hole.

4. The method of claim 1, wherein the ceramic substrate comprises but is not limited to ceramic materials prepared from one or more of zirconia, aluminum nitride, and alumina.

5. The method of claim 1, wherein the step K2 is performed by one or more of sputtering, evaporation, arc deposition and sintering.

6. The method of claim 1, wherein the plating process in step K3 includes, but is not limited to, a combination of one or more of electroless plating and electroplating.

7. The method of claim 1, wherein the removing of the transition metal layer and the thickened metal layer in the step K5 comprises but is not limited to one or more of mechanical grinding, chemical polishing and etching.

Technical Field

The invention relates to the technical field of ceramic substrate processing, in particular to a metallization method of a ceramic substrate.

Background

With the development of light, thin, small, high-density and multifunctional electronic products, the integrated level of large-scale integrated circuits is higher and higher, and the density and power of packaging elements are higher and higher. Therefore, the requirements for the arrangement of the package substrate and the fineness of the conductive traces are also increasing. At present, the ceramic substrate metallization method mainly comprises a thick film method and a thin film method. The thick film method is used for printing circuits by using a screen printing method, and is widely used in high-temperature or low-temperature co-fired ceramics, but the thick film circuit manufactured by adopting the screen printing method has the problems of insufficient line diameter width, insufficient circuit precision caused by screen expansion and the like, and the fineness of the thick film circuit for seeking fine high-density circuits cannot meet the market demand. The thin film method, namely sputtering a titanium layer and a copper layer on a substrate, and then completing the conductive circuit through the processes of exposure, development, electroplating, etching and the like, solves the problem of circuit fineness, but has complex process flow and high cost, and uses various chemicals which cause great pollution to the environment.

Chinese invention patent application specification CN108337812A discloses a method for preparing metallized circuit on a substrate, comprising the following steps: carrying out surface amphiphobic treatment on the cleaned substrate, and forming an amphiphobic modified layer with the thickness of 0.1-1000 nm on the surface of the substrate; removing or destroying the double-sparse layer structure in a preset circuit area of the substrate to realize the patterning of the conductive circuit and form a circuit patterning layer; preparing a conductive circuit with regular boundaries and controllable line width on a substrate to form a conductive metal circuit layer; finally, carrying out surface treatment on the substrate to obtain the substrate with a bright and flat conductive metal circuit layer; however, when the method is used to metalize the ceramic substrate, the ceramic substrate needs to be first subjected to the hydrophobic-hydrophobic treatment to form the hydrophobic-hydrophobic modified layer, and then the hydrophobic-hydrophobic modified layer is subjected to the patterning treatment, so that the finally formed conductive metal circuit is only on the surface of the ceramic and cannot penetrate into the ceramic, and the fineness and the heat dissipation efficiency of the conductive metal circuit need to be further improved.

Disclosure of Invention

In order to solve the above problems, the present invention provides a method for metallizing a ceramic substrate, in which a line pattern with a predetermined depth and width is prepared on the ceramic substrate in advance, and a conductive metal line formed by metallization is filled in the line pattern of the ceramic substrate, so that the fineness and heat dissipation efficiency of the conductive metal line can be greatly improved.

In order to solve the above-mentioned purpose, the following technical scheme is adopted in the invention.

A method of metallizing a ceramic substrate comprising the steps of: k1, carrying out patterning treatment on the surface of the ceramic substrate according to preset conductive circuit parameters to form a circuit pattern with preset depth and width on the surface of the ceramic substrate; k2, preparing a transition metal layer on the surface of the ceramic substrate subjected to the patterning treatment in the step K1; k3, forming a thickened metal layer on the surface of the ceramic substrate with the obtained transition metal layer by an upper plating mode; k4, completely removing the transition metal layer and the thickened metal layer on the non-circuit pattern part of the surface of the ceramic substrate to obtain a conductive metal circuit filled in the ceramic substrate; k5, carrying out surface treatment on the conductive metal circuit in the step K4 to form a packaging substrate on the surface of the conductive metal layer, and finally obtaining the flat and smooth high-precision ceramic circuit board.

Preferably, the patterning process in step K1 includes, but is not limited to, a combination of one or more of a laser marking process, a chemical etching process, a photolithography process, an imprinting process, and a grinding process.

Preferably, the circuit pattern of the patterning process in step K1 includes, but is not limited to, a desired circuit pattern or a desired via.

Preferably, the ceramic substrate includes, but is not limited to, ceramic materials prepared from one or more of zirconia, aluminum nitride, and alumina.

Preferably, the preparation of the transition metal layer in step K2 includes, but is not limited to, obtaining by one or more combination of a sputtering process, an evaporation process, an arc deposition process and a sintering process.

Preferably, the plating manner in the step K3 includes, but is not limited to, one or more of a combination of an electroless plating manner and an electroplating manner.

Preferably, the removing manner of the transition metal layer and the thickened metal layer in the K5 step includes, but is not limited to, one or more combinations of mechanical grinding manner, chemical grinding and polishing manner and etching manner.

The invention has the following beneficial effects:

the metallization method of the ceramic substrate prepares the circuit pattern with preset depth and width on the ceramic substrate in advance, the circuit pattern is deeply inserted into the ceramic substrate, the width and the thickness of the conductive metal circuit in the metallization process can be controlled with high precision, and thus the high-precision conductive metal circuit is obtained.

Drawings

Fig. 1 is a schematic flow chart of a metallization method according to an embodiment of the present invention.

Description of reference numerals: 11. a ceramic substrate; 12. a line pattern; 13. a transition metal layer; 14. thickening the metal layer; 15. a conductive metal line; 16. and packaging the substrate.

Detailed Description

The invention will be further described with reference to the accompanying drawings.

FIG. 1 is a schematic flow diagram of a metallization process according to one embodiment of the invention; as shown in fig. 1, the flow of the metallization method of the ceramic substrate 11 is (a) to (e), where (a) is the ceramic substrate 11 subjected to the patterning treatment, (b) is the ceramic substrate 11 prepared with the transition metal layer 13, (c) is the ceramic substrate 11 prepared with the thickened metal layer 14, (d) is the ceramic substrate 11 from which the partial metal layer of the non-wiring pattern 12 is removed, and (e) is the ceramic wiring board subjected to the surface treatment.

The metallization method of the ceramic substrate in the embodiment mainly includes the following steps:

k1, the ceramic substrate 11 may be an aluminum nitride ceramic substrate, and a grinding method is adopted to perform patterning on the surface of the ceramic substrate 11 according to the preset conductive circuit parameters, so as to form a circuit pattern 12 with a preset depth and width on the surface of the ceramic substrate 11; the patterning treatment process flow is simple, the depth and the width of the conductive metal circuit 15 formed in the subsequent metallization process are effectively controlled by directly forming the circuit pattern 12 on the ceramic substrate 11, so that the high-precision conductive metal circuit 15 can be obtained, and the circuit pattern 12 is provided with a circuit diagram and a through hole required by a double-sided board;

k2, preparing a transition metal layer 13 on the surface of the ceramic substrate 11 subjected to the patterning treatment in the step K1, wherein the transition metal layer 13 of the embodiment is prepared by a brazing sintering method, the sintering temperature is 800 ℃, the time is 2 hours, and the transition metal layer 13 is uniformly distributed on the surface of the ceramic substrate 11;

k3, forming a thickened metal layer 14 on the surface of the ceramic substrate 11 with the transition metal layer 13, wherein the upper plating mode of the embodiment adopts a chemical plating mode to form a uniform thickened metal layer 14 on the surface of the transition metal layer 13;

k4, completely removing the transition metal layer 13 and the thickened metal layer 14 of the non-circuit pattern 12 part on the surface of the ceramic substrate 11 to obtain the conductive metal circuit 15 filled in the ceramic substrate 11, wherein the removing method of the non-circuit pattern 12 part of the metal layer in the embodiment is a mechanical grinding method, the transition metal layer 13 and the thickened metal layer 14 on the surface of the ceramic substrate 11 are ground and removed, the metal layer in the circuit pattern 12 is retained, after the mechanical grinding treatment, most or all of the metal in the conductive metal circuit 15 is filled in the ceramic substrate 11, and the metal surface of the conductive metal circuit 15 is flush with the ceramic surface, so that the width and the thickness of the conductive metal circuit 15 in the metallization process are more easily controlled, thereby being beneficial to obtaining a higher refined conductive metal circuit 15;

and K5, performing surface treatment on the conductive metal circuit 15 in the step K4 to form a package substrate 16 on the surface of the conductive metal layer, and finally obtaining the flat and smooth high-precision ceramic circuit board.

In the embodiment, the line pattern 12 with the preset depth and width is prepared on the ceramic substrate 11 in advance, the line pattern 12 is inserted into the ceramic substrate 11, and the width and the thickness of the conductive metal line 15 in the metallization process can be controlled with high precision, so that the high-precision conductive metal line 15 is obtained, meanwhile, the conductive metal line 15 of the embodiment is filled in the line pattern 12, so that the heat dissipation efficiency is improved, compared with the prior art, the metallization method of the ceramic substrate 11 of the embodiment saves the preparation process flow, the used equipment is simpler and cheaper, and the production cost is reduced.

In other preferred embodiments, the ceramic substrate 11 may further include, but is not limited to, a ceramic material prepared from one or more of zirconia, aluminum nitride and alumina, the patterning process in step K1 may also be, but is not limited to, a combination of one or more of a laser marking process, a chemical etching process, a photolithography process and an imprinting process, the metal line transition layer in step K2 may be fabricated by, but is not limited to, one or more of sputtering, evaporation, arc deposition and sintering processes, the plating process in step K3 may also be, but is not limited to, a combination of one or more of a chemical plating process and an electroplating process, and the transition metal layer 13 and the thickened metal layer 14 in step K5 may be removed by, but is not limited to, a combination of one or more of a mechanical grinding process, a chemical polishing process and an etching process. By preparing the line pattern 12 with a predetermined depth and width on the ceramic substrate 11 in advance, the line pattern 12 is extended into the ceramic substrate 11, so as to fill the conductive metal line 15 in the ceramic substrate 11.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.