Manufacturing method of nickel-gold electroplated layer of high-frequency millimeter wave IC packaging substrate double-sided pattern

文档序号:1340026 发布日期:2020-07-17 浏览:4次 中文

阅读说明:本技术 高频毫米波ic封装基板双面图形镍金电镀层的制造方法 (Manufacturing method of nickel-gold electroplated layer of high-frequency millimeter wave IC packaging substrate double-sided pattern ) 是由 梁甲 尤宁圻 于 2019-01-10 设计创作,主要内容包括:本发明公开了一种高频毫米波IC封装基板双面图形镍金电镀层的制造方法。主要分两个步骤:第一步BOT面图形镍金电镀,第二步TOP面图形镍金电镀。BOT面图形镍金电镀时,需要通过导电孔与TOP面连接,在TOP面加上电流进行BOT面镍金电镀;TOP面镍金电镀时,需要通过导电孔与BOT面连接,在BOT面加上电流进行TOP面镍金电镀。本发明通过金厚的均匀性控制,TOP面图形镍金电镀层。金厚控制在1um+/-0.02um。目的是在IC封装中,使金线与邦定面的镍金镀层更好的键合在一起,实现数据的稳定、快速和有效传输;另一方面,为达到欧盟环保要求提出的ROHS标准,IC封装后采用无铅焊锡贴片装到主板上。本专利制造方法对BOT面金厚的控制在0.15um到0.2um之间,对贴片的稳定性和可靠性具有重大的改善。(The invention discloses a method for manufacturing a nickel-gold electroplated layer of a double-sided graph of a high-frequency millimeter wave IC packaging substrate. The method mainly comprises two steps: the first step is BOT surface pattern nickel-gold electroplating, and the second step is TOP surface pattern nickel-gold electroplating. When the BOT surface pattern is subjected to nickel-gold electroplating, the BOT surface pattern needs to be connected with the TOP surface through the conductive hole, and current is applied to the TOP surface to carry out the BOT surface nickel-gold electroplating; when TOP surface nickel gold electroplating, it needs to connect with BOT surface through conductive hole, and adds current on BOT surface to proceed TOP surface nickel gold electroplating. The invention controls the uniformity of gold thickness, and the TOP surface pattern is a nickel-gold electroplated layer. The gold thickness is controlled at 1um +/-0.02 um. The purpose is that in IC packaging, a gold wire and a nickel-gold plating layer on a bonding surface are bonded together better, and stable, rapid and effective data transmission is realized; on the other hand, in order to meet the ROHS standard proposed by the environmental protection requirements of the european union, the IC is mounted on the motherboard by using a lead-free solder paste after being packaged. The manufacturing method controls the thickness of the gold on the BOT surface to be 0.15um to 0.2um, and has great improvement on the stability and reliability of the patch.)

1. A manufacturing method of nickel-gold electroplating of a double-sided graph of a high-frequency millimeter wave IC packaging substrate is characterized by comprising the following steps: manufacturing nickel-gold electroplated layers on the TOP surface and the BOT surface;

according to the performance requirement of the high-frequency IC on the graph of the packaging substrate, a precise dry plate is manufactured through graph design, the graph is exposed and developed, and finally the graph is etched to finish the graph of the TOP surface and the BOT surface. At this time, the IC on the same layer is open-circuited between the fingers and the board edge. The upper and lower layer patterns are connected by metal conductive holes.

Conduction principle: and a 30-micro-inch conductive film is manufactured on the TOP surface, the pattern of the TOP surface is completely communicated, and the TOP surface is communicated with the pattern of the BOT surface needing nickel and gold electroplating through the metal conductive hole. Protecting the whole TOP surface with insulating glue, forming several current-connecting holes on the TOP surface, and applying current on the TOP surface to perform nickel-gold electroplating on the BOT surface; on the other hand, when TOP surface nickel gold plating is performed, a 30-microinch conductive film is also formed on the BOT surface, and the principle is the same. After electroplating the nickel and the gold, removing the conductive film by a chemical method. Finally, a nickel layer with high purity and high uniformity is formed on the surface of the bonding finger (often called TOP surface) connected with the IC, and the gold thickness of the plating layer is 1um +/-0.02 um; and the surface (often called BOT surface) to be attached on the main board is also provided with a nickel layer with high uniformity. The lead-free soldering tin has extremely high requirements on the thickness of a gold plating layer, particularly gold, and the gold thickness is required to be 0.15um to 0.2um, so that the lead-free soldering tin has better reliability and stability.

2. The method for manufacturing the nickel-gold electroplated layer on the double-sided pattern of the high-frequency millimeter wave IC package substrate as recited in claim 1, wherein a 30um conductive film is manufactured on the TOP-sided pattern by a chemical process, and after the manufacturing, the whole surface is protected by insulating glue, and only a few pinch points needing to be connected with current are opened. And carrying out nickel layer electroplating on the BOT surface pattern through an electroplating process. The thickness of the gold is controlled between 0.15um and 0.2 um.

3. The method for manufacturing the nickel-gold electroplated layer with the patterns on the two sides of the high-frequency millimeter wave IC packaging substrate as claimed in claim 1, wherein the TOP conductive film is removed by a chemical process, then a 30um conductive film is manufactured on the BOT surface pattern by the chemical process, after the manufacturing, the whole surface is protected by an insulating glue, and only a plurality of pinch points needing to be connected with current are opened. And carrying out nickel layer electroplating on the TOP surface pattern through an electroplating process. The gold thickness is controlled at 1um +/-0.02 um.

Technical Field

The invention relates to the technical field of circuit packaging substrate manufacturing, in particular to a manufacturing method of a nickel-gold plating layer of a high-frequency millimeter wave IC packaging substrate graph.

Background

As wireless communication technology gradually changes from 4G to 5G, related electronic products and communication devices formed by network technology also need to be changed, and the performance requirements of high-speed processing of a large amount of large-capacity information on an IC package substrate are also higher and higher. The production of IC package substrates with high and ultra-high frequencies has become a trend of necessity and is urgent. Therefore, in the manufacturing process of the high-frequency millimeter wave IC package substrate, the research and development and production details of related products need to be refined, optimized and improved continuously. The method for manufacturing the nickel-gold electroplated layer on the double-sided pattern of the high-frequency millimeter wave IC packaging substrate is mentioned in the patent. Only in this way, the yield of product packaging can be improved, the reliability and stability of the lead-free soldering tin paster are realized, and a major breakthrough in product performance is really realized.

The manufacturing process of the conventional IC packaging substrate can be optimized and promoted in many aspects whether in 3G wireless mobile communication or current 4G communication. There is room for optimization and improvement, particularly in the details of the manufacturing process, and in the control of data indicators. Therefore, the yield and the performance of the product are really improved, and the research and development and production costs are reduced.

Disclosure of Invention

The technical problem to be solved by the invention is as follows: the method for manufacturing the nickel-gold electroplated layer with the double-sided graph of the high-frequency millimeter wave IC packaging substrate is characterized in that a uniform 30-micrometer conductive film is attached to the surface of the graph through control and manufacturing, and a metal surface needing electroplating and uniformly and reasonably conveyed by current is formed through a designed conductive hole, so that the controllable nickel-gold electroplated layer with dense quality and good uniformity is finally formed. On the one hand, the TOP surface pattern is electroplated with a nickel layer. The gold thickness is controlled to be 1um +/-0.02um, and mainly in the next IC packaging process, a gold wire and a nickel-gold electroplating layer of a bonding surface are better bonded together, so that the rapid and effective transmission of data is realized; on the other hand, in order to meet the ROHS standard set forth by the european union environmental protection requirements, the IC is basically mounted on the main board using a lead-free solder paste after being packaged. The manufacturing method of the patent controls the thickness of the gold of the BOT surface to be between 0.15um and 0.2um, and has great improvement on the stability and reliability of the patch.

In order to solve the technical problems, the invention adopts the technical scheme that: and respectively manufacturing 30-microinch uniform conductive films on the TOP surface pattern and the BOT surface pattern which are etched, and respectively electroplating a nickel layer on the BOT surface pattern and the TOP surface pattern. The thickness of the nickel-gold layer is accurately controlled by a high-precision electroplating rectifier.

Drawings

To more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described as follows:

wherein:

FIG. 1 is a flow chart of a process for carrying out the present invention;

FIG. 2 is a schematic cross-sectional view of a BOT surface pattern nickel-gold electroplated layer according to the present invention;

FIG. 2 illustrates by reference:

1. insulating materials such as glass fiber, ceramic powder and the like for final inspection of TOP surface and BOT surface;

2. the conducting hole is used for connecting the TOP surface graph and the BOT surface graph;

3. BOT line graph;

4. TOP line pattern;

5. 30 micro-inch conducting film for conducting whole plate surface during electroplating

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.

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