阅读说明：本技术 微流体致动器 (Microfluidic actuator ) 是由 莫皓然 余荣侯 张正明 戴贤忠 廖文雄 黄启峰 韩永隆 陈宣恺 于 2019-01-15 设计创作，主要内容包括：一种微流体致动器,包含：一基板,具有多个第一出流孔洞以及多个第二出流孔洞；一腔体层,具有一储流腔室；一振动层；一第一金属层；一压电致动层；一第二金属层,具有一上电极焊垫以及一下电极焊垫；一入口层；一共振层；以及一阵列孔片；提供具有不同相位电荷的驱动电源至上电极焊垫以及下电极焊垫,以驱动并控制振动层产生上下位移,使流体自入口层吸入,汇流至储流腔室,最后受挤压经由多个第一出流孔洞以及多个第二出流孔洞并推开阵列孔片后排出以完成流体传输。(A microfluidic actuator, comprising: a substrate having a plurality of first outflow holes and a plurality of second outflow holes; a cavity layer having a flow storage chamber; a vibration layer; a first metal layer; a piezoelectric actuation layer; a second metal layer having an upper electrode pad and a lower electrode pad; an inlet layer; a resonance layer; and an array aperture plate; and providing a driving power supply with different phase charges to the upper electrode welding pad and the lower electrode welding pad to drive and control the vibration layer to generate vertical displacement so that the fluid is sucked from the inlet layer, converged to the fluid storage chamber, extruded through the first outflow holes and the second outflow holes and pushed away the array hole sheet to be discharged to complete fluid transmission.)

1. A microfluidic actuator, comprising:

a substrate having a first surface and a second surface, an outlet trench, a plurality of first outflow holes and a plurality of second outflow holes being formed by etching, the outlet trench being communicated with the plurality of first outflow holes and the plurality of second outflow holes, the plurality of second outflow holes being disposed outside the plurality of first outflow holes;

a cavity layer formed on the first surface of the substrate by a deposition process, and a flow storage chamber formed by an etching process, the flow storage chamber being communicated with the first outflow holes and the second outflow holes;

a vibration layer formed on the cavity layer by deposition process, and formed with multiple fluid grooves and a vibration region by etching process, wherein the fluid grooves are symmetrically formed on two opposite sides of the vibration layer to define the vibration region;

a first metal layer formed on the vibration layer by a deposition process, and formed with a lower electrode region formed at a position corresponding to the vibration region, a plurality of barrier regions formed between the lower electrode region and the barrier regions, and a plurality of gaps formed at positions corresponding to the outer sides of the fluid trenches by an etching process;

a piezoelectric actuating layer formed on the first metal layer by a deposition process, and forming an active region at a position corresponding to the lower electrode region of the first metal layer by an etching process;

an isolation layer formed on the piezoelectric actuation layer and the first metal layer by a deposition process, and forming a plurality of spacers in the plurality of gaps by an etching process;

a second metal layer formed on the piezoelectric actuating layer, the first metal layer and the isolation layer by a deposition process, and an upper electrode pad and a lower electrode pad formed on the first metal layer by an etching process;

a waterproof layer formed on the first metal layer, the second metal layer and the isolation layer by a coating process, and exposing the upper electrode pad and the lower electrode pad by an etching process;

a photoresist layer formed on the first metal layer, the second metal layer and the waterproof layer by a developing process;

an inlet layer formed with a plurality of fluid inlets by an etching process or a laser process;

a flow channel layer formed on the inlet layer and forming an inlet chamber, a plurality of inlet channels and a plurality of flow channel inlets through a photolithography process, wherein the plurality of flow channel inlets are respectively communicated with the plurality of fluid inlets of the inlet layer, the plurality of inlet channels and the plurality of flow channel inlets are arranged around the inlet chamber, and the plurality of inlet channels are communicated between the plurality of flow channel inlets and the inlet chamber;

a resonant layer formed on the flow channel layer by rolling process, a cavity through hole formed by etching process, and bonded on the photoresist layer by flip-chip alignment process and wafer bonding process; and

an array hole sheet formed on the substrate through a pasting process, the array hole sheet having a plurality of hole sheet holes, the plurality of hole sheet holes being arranged in a staggered manner with the plurality of first outflow holes and the plurality of second outflow holes, thereby sealing the plurality of first outflow holes and the plurality of second outflow holes of the first substrate;

the driving power source with different phase charges is provided to the upper electrode pad and the lower electrode pad to drive and control the vibration region of the vibration layer to generate vertical displacement, so that fluid is sucked from the plurality of fluid inlets, flows to the inflow chamber through the plurality of inflow channels, flows to the resonance chamber through the cavity through holes, flows to the flow storage chamber through the plurality of fluid grooves, is extruded to push away the array hole piece through the plurality of first outflow holes and the plurality of second outflow holes and is discharged from the plurality of hole piece holes to finish fluid transmission.

2. The micro fluid actuator of claim 1, wherein the upper electrode pad and the lower electrode pad are formed on opposite sides of the piezoelectric actuation layer.

3. The microfluidic actuator of claim 1, wherein each of the second outflow holes has a larger aperture than each of the first outflow holes.

4. The microfluidic actuator of claim 1, wherein the substrate is etched to form a plurality of auxiliary trenches symmetrically formed on opposite sides of the outlet trench.

5. The microfluidic actuator of claim 4, wherein a positioning post is formed between each auxiliary trench and the outlet trench, the positioning post being used to position the array plate.

6. The microfluidic actuator of claim 1, wherein the substrate is a silicon substrate.

7. The microfluidic actuator of claim 1, wherein the cavity layer is a silicon dioxide material.

8. The microfluidic actuator of claim 1, wherein the vibration layer is a silicon nitride material.

9. The microfluidic actuator of claim 1, wherein the first metal layer is a titanium nitride metal material.

10. The microfluidic actuator of claim 1, wherein the first metal layer is a tantalum metal material.

11. The microfluidic actuator of claim 1, wherein the isolation layer is a silicon dioxide material.

12. The microfluidic actuator of claim 1, wherein the second metal layer is a gold metal material.

13. The microfluidic actuator of claim 1, wherein the second metal layer is an aluminum metal material.

14. The microfluidic actuator of claim 1, wherein the substrate is formed with the plurality of first exit flow holes and the plurality of second exit flow holes by a deep reactive ion etching process.

15. The microfluidic actuator of claim 1, wherein the cavity layer forms the fluid storage chamber by a wet etching process.

16. The microfluidic actuator of claim 1, wherein the photoresist layer is a thick film photoresist.

17. The microfluidic actuator of claim 1, wherein the resonant layer is formed by a dry etching process to form the cavity via.

18. The microfluidic actuator of claim 1, wherein the resonant layer is formed by a laser etching process to form the cavity via.

19. The micro fluid actuator as claimed in claim 1, wherein a positive voltage is applied to the upper electrode pad and a negative voltage is applied to the lower electrode pad, such that the active region of the piezoelectric actuation layer drives the vibration region of the vibration layer to displace in a direction away from the substrate.

20. The micro fluid actuator as claimed in claim 1, wherein a negative voltage is applied to the upper electrode pad and a positive voltage is applied to the lower electrode pad, such that the active region of the piezoelectric actuation layer drives the vibration region of the vibration layer to move toward a direction close to the substrate.

21. The microfluidic actuator of claim 1, wherein:

applying a negative voltage to the upper electrode pad and a positive voltage to the lower electrode pad, so that the active region of the piezoelectric actuation layer drives the vibration region of the vibration layer to displace towards a direction close to the substrate, thereby external fluid is sucked into the micro-fluid actuator from the plurality of fluid inlets, and the fluid entering the micro-fluid actuator flows to the inflow chamber through the plurality of inflow channels in sequence, flows to the resonance chamber through the cavity through hole, and finally is collected in the flow storage chamber through the plurality of fluid grooves; and

and converting the electrical properties of the upper electrode pad and the lower electrode pad, and applying a positive voltage to the upper electrode pad and a negative voltage to the lower electrode pad, so that the vibration region of the vibration layer is displaced towards the direction away from the substrate, and the fluid collected in the fluid storage chamber is discharged out of the microfluidic actuator from the plurality of the hole holes of the plurality of the first outflow holes and the plurality of the second outflow holes in sequence to finish the transmission of the fluid.

22. A microfluidic actuator comprising a plurality of actuation units, each actuation unit comprising:

a substrate having a first surface and a second surface, an outlet trench, a plurality of first outflow holes and a plurality of second outflow holes being formed by etching, the outlet trench being communicated with the plurality of first outflow holes and the plurality of second outflow holes, the plurality of second outflow holes being disposed outside the plurality of first outflow holes;

a cavity layer formed on the first surface of the substrate by a deposition process, and a flow storage chamber formed by an etching process, the flow storage chamber being communicated with the first outflow holes and the second outflow holes;

a vibration layer formed on the cavity layer by deposition process, and formed with multiple fluid grooves and a vibration region by etching process, wherein the fluid grooves are symmetrically formed on two opposite sides of the vibration layer to define the vibration region;

a first metal layer formed on the vibration layer by a deposition process, and formed with a lower electrode region formed at a position corresponding to the vibration region, a plurality of barrier regions formed between the lower electrode region and the barrier regions, and a plurality of gaps formed at positions corresponding to the outer sides of the fluid trenches by an etching process;

a piezoelectric actuating layer formed on the first metal layer by a deposition process, and forming an active region at a position corresponding to the lower electrode region of the first metal layer by an etching process;

an isolation layer formed on the piezoelectric actuation layer and the first metal layer by a deposition process, and forming a plurality of spacers in the plurality of gaps by an etching process;

a second metal layer formed on the piezoelectric actuating layer, the first metal layer and the isolation layer by a deposition process, and an upper electrode pad and a lower electrode pad formed on the first metal layer by an etching process;

a waterproof layer formed on the first metal layer, the second metal layer and the isolation layer by a coating process, and exposing the upper electrode pad and the lower electrode pad by an etching process;

a photoresist layer formed on the first metal layer, the second metal layer and the waterproof layer by a developing process;

an inlet layer formed with a plurality of fluid inlets by an etching process or a laser process;

a flow channel layer formed on the inlet layer and forming an inlet chamber, a plurality of inlet channels and a plurality of flow channel inlets through a photolithography process, wherein the plurality of flow channel inlets are respectively communicated with the plurality of fluid inlets of the inlet layer, the plurality of inlet channels and the plurality of flow channel inlets are arranged around the inlet chamber, and the plurality of inlet channels are communicated between the plurality of flow channel inlets and the inlet chamber;

a resonant layer formed on the flow channel layer by rolling process, a cavity through hole formed by etching process, and bonded on the photoresist layer by flip-chip alignment process and wafer bonding process; and

an array hole sheet formed on the substrate through a pasting process, the array hole sheet having a plurality of hole sheet holes, the plurality of hole sheet holes being arranged in a staggered manner with the plurality of first outflow holes and the plurality of second outflow holes, thereby sealing the plurality of first outflow holes and the plurality of second outflow holes of the first substrate;

providing a driving power source with different phase charges to the upper electrode bonding pad and the lower electrode bonding pad to drive and control the vibration region of the vibration layer to generate vertical displacement, so that fluid is sucked from the plurality of fluid inlets, flows to the inflow chamber through the plurality of inflow channels, flows to the resonance chamber through the cavity through holes, flows to the flow storage chamber through the plurality of fluid grooves, is extruded to push away the array hole piece through the plurality of first outflow holes and the plurality of second outflow holes and is discharged from the plurality of hole piece holes to finish fluid transmission; and

the actuating units are connected in series, parallel or series-parallel, so that the transmission flow of the fluid is increased.

23. A microfluidic actuator, comprising:

a substrate having a first surface and a second surface, and forming at least one outlet trench, a plurality of first outflow holes and a plurality of second outflow holes by etching, wherein the at least one outlet trench is communicated with the plurality of first outflow holes and the plurality of second outflow holes;

a cavity layer formed on the first surface of the substrate by a deposition process, and formed with at least one fluid storage chamber by an etching process, the at least one fluid storage chamber being in communication with the plurality of first outflow holes and the plurality of second outflow holes;

a vibration layer formed on the cavity layer by a deposition process, and formed with a plurality of fluid grooves and at least one vibration region by an etching process, wherein the fluid grooves are symmetrically formed on two opposite sides of the vibration layer to define the at least one vibration region;

a first metal layer formed on the vibration layer by a deposition process, and formed with at least a lower electrode region formed at a position corresponding to the at least one vibration region, a plurality of barrier regions formed between the at least one lower electrode region and the plurality of barrier regions by an etching process;

a piezoelectric actuating layer formed on the first metal layer by a deposition process, and at least one active region formed at a position corresponding to the at least one lower electrode region of the first metal layer by an etching process;

an isolation layer formed on the piezoelectric actuation layer and the first metal layer by a deposition process, and forming a plurality of spacers in the plurality of gaps by an etching process;

a second metal layer formed on the piezoelectric actuating layer, the first metal layer and the isolation layer by a deposition process, and at least one upper electrode pad and at least one lower electrode pad formed on the first metal layer by an etching process;

a waterproof layer formed on the first metal layer, the second metal layer and the isolation layer by a coating process, and exposing the at least one upper electrode pad and the at least one lower electrode pad by an etching process;

a photoresist layer formed on the first metal layer, the second metal layer and the waterproof layer by a developing process;

an inlet layer formed with a plurality of fluid inlets by an etching process or a laser process;

a flow channel layer formed on the inlet layer and forming at least one inlet chamber, a plurality of inlet channels and a plurality of flow channel inlets through a photolithography process, wherein the plurality of flow channel inlets are respectively communicated with the plurality of fluid inlets of the inlet layer, the plurality of inlet channels and the plurality of flow channel inlets are arranged around the at least one inlet chamber, and the plurality of inlet channels are communicated between the plurality of flow channel inlets and the at least one inlet chamber;

a resonant layer formed on the flow channel layer by rolling process, at least one cavity through hole formed by etching process, and bonded on the photoresist layer by flip-chip alignment process and wafer bonding process; and

an array hole sheet formed on the substrate through a pasting process, the array hole sheet having a plurality of hole sheet holes, the plurality of hole sheet holes being arranged in a staggered manner with the plurality of first outflow holes and the plurality of second outflow holes, thereby sealing the plurality of first outflow holes and the plurality of second outflow holes of the first substrate;

the driving power source with different phase charges is provided to the at least one upper electrode pad and the at least one lower electrode pad to drive and control the at least one vibration region of the vibration layer to generate vertical displacement, so that fluid is sucked from the plurality of fluid inlets, flows to the at least one inflow chamber through the plurality of inflow channels, flows to the at least one resonance chamber through the at least one cavity through hole, flows to the at least one fluid storage chamber through the plurality of fluid grooves, is extruded to pass through the plurality of first outflow holes and the plurality of second outflow holes and push away the array hole sheet, and is discharged from the plurality of hole sheet holes to finish fluid transmission.

Technical Field

The present disclosure relates to an actuator, and more particularly, to a micro-fluid actuator fabricated by micro-electromechanical surface and bulk fabrication processes.

Background

At present, in various fields, no matter in medicine, computer technology, printing, energy and other industries, products are developed toward refinement and miniaturization, wherein fluid actuators included in products such as micropumps, sprayers, ink jet heads, industrial printing devices and the like are key technologies.

With the development of technology, the applications of fluid conveying structures are becoming more diversified, such as industrial applications, biomedical applications, medical care, electronic heat dissipation … …, and even the image of a hot wearable device is seen recently, which shows that the conventional fluid actuators have gradually tended to be miniaturized and maximized in flow rate.

Disclosure of Invention

The main objective of the present invention is to provide a valve-type micro-fluid actuator, which is fabricated by using micro-electro-mechanical process and can transmit fluid. The micro-fluid actuator is manufactured by micro-electro-mechanical surface type and body type processing processes and packaging technology.

One broad aspect of the present disclosure is a microfluidic actuator comprising: the piezoelectric actuator comprises a substrate, a cavity layer, a vibration layer, a first metal layer, a piezoelectric actuation layer, an isolation layer, a second metal layer, a waterproof layer, a photoresist layer, an inlet layer, a flow channel layer, a resonance layer and an array hole sheet. The substrate has a first surface and a second surface, and an outlet trench, a plurality of first outflow holes and a plurality of second outflow holes are formed through an etching process. The outlet groove is communicated with the first outflow holes and the second outflow holes. The plurality of second outflow holes are arranged outside the plurality of first outflow holes. The cavity layer is formed on the first surface of the substrate through a deposition process, and a flow storage cavity is formed through an etching process. The flow storage chamber is communicated with the first outflow holes and the second outflow holes. The vibration layer is formed on the cavity layer through a deposition process, and a plurality of fluid grooves and a vibration area are formed through an etching process. The fluid grooves are symmetrically formed on two opposite sides of the vibration layer to define a vibration area. The first metal layer is formed on the vibration layer through a deposition process, and a lower electrode region, a plurality of barrier regions and a plurality of gaps are formed through an etching process. The lower electrode region is formed at a position corresponding to the vibration region. A plurality of gaps are formed between the lower electrode region and the plurality of barrier regions. The barrier regions are formed at positions corresponding to outer sides of the fluid trenches. The piezoelectric actuating layer is formed on the first metal layer through a deposition process, and an actuating region is formed at a position corresponding to the lower electrode region of the first metal layer through an etching process. The isolation layer is formed on the piezoelectric actuation layer and the first metal layer through a deposition process, and a plurality of spacers are formed in the plurality of gaps through an etching process. The second metal layer is formed on the piezoelectric actuating layer, the first metal layer and the isolation layer through a deposition process, and an upper electrode pad and a lower electrode pad are formed on the first metal layer through an etching process. The waterproof layer is formed on the first metal layer, the second metal layer and the isolation layer through a coating process, and the upper electrode pad and the lower electrode pad are exposed through an etching process. The photoresist layer is formed on the first metal layer, the second metal layer and the waterproof layer through a developing process. The inlet layer is formed with a plurality of fluid inlets through an etching process or a laser process. The runner layer is formed on the inlet layer, and a flow inlet chamber, a plurality of flow inlet channels and a plurality of runner inlets are formed through a photoetching process. The plurality of flow channel inlets are respectively communicated with the plurality of fluid inlets of the inlet layer. A plurality of inflow channels and a plurality of flow passage inlets are arranged around the inflow chamber. A plurality of inlet channels communicate between the plurality of flow passage inlets and the inlet chamber. The resonant layer is formed on the flow channel layer by a rolling process, a cavity through hole is formed by an etching process, and the resonant layer is bonded on the photoresist layer by a flip-chip alignment process and a wafer bonding process. The array hole sheet is formed on the substrate through a pasting process. The array hole plate is provided with a plurality of hole plate holes. A plurality of hole piece holes and a plurality of first holes and a plurality of second holes of effluenting set up that flow out each other dislocation, seal a plurality of first holes and a plurality of second holes of effluenting of first base plate borrow. And providing a driving power supply with different phase charges to the upper electrode welding pad and the lower electrode welding pad to drive and control the vibration area of the vibration layer to generate vertical displacement, so that fluid is sucked from the plurality of fluid inlets, flows into the inflow chamber through the plurality of inflow channels, flows into the resonance chamber through the cavity through holes, flows into the flow storage chamber through the plurality of fluid grooves, is extruded to pass through the plurality of first outflow holes and the plurality of second outflow holes and is discharged from the plurality of hole piece holes after pushing the array hole piece open so as to finish fluid transmission.

Drawings

Fig. 1A is a schematic sectional front view of a first embodiment of the present microfluidic actuator.

Fig. 1B is a schematic side sectional view of the first embodiment of the present disclosure.

Fig. 2A to 2AH are exploded views illustrating the manufacturing steps of the first embodiment of the present disclosure.

Fig. 3 is a schematic top view of the first embodiment of the present disclosure.

Fig. 4 is a schematic top view of an inlet layer according to a first embodiment of the disclosure.

Fig. 5 is a schematic plan view of a flow hole according to a first embodiment of the present disclosure.

Fig. 6A to 6E are operation diagrams of the first embodiment of the present disclosure.

Fig. 7A is a schematic cross-sectional view of a second embodiment of the present microfluidic actuator.

Fig. 7B is a schematic bottom view of another embodiment of the disclosure.

Fig. 8 is a bottom view of the array aperture plate according to the third embodiment of the present disclosure.

Fig. 9A to 9C are schematic diagrams illustrating a flip-chip alignment process and a wafer bonding process according to a fourth embodiment of the present invention.

Description of the reference numerals

100. 100', 100", 100'": microfluidic actuator

10: actuating unit

1a, 1a' ": first substrate

11 a: first surface

12 a: second surface

13 a: outlet groove

14 a: auxiliary trench

15a, 15a' ": first outflow hole

16a, 16a' ": second outflow hole

1 b: cavity layer

1 c: vibration layer

11 c: fluid channel

12 c: vibration region

1 d: a first metal layer

11 d: lower electrode area

12 d: barrier region

13 d: gap

1 e: piezoelectric actuation layer

11 e: actuation zone

1 f: insulating layer

11 f: spacer wall

1 g: second metal layer

11 g: welding pad isolation region

12 g: upper electrode region

13 g: upper electrode pad

14 g: lower electrode pad

1 h: water-proof layer

1 i: second substrate

1 j: film glue layer

1 k: entrance layer

1 m: resonant layer

11 m: cavity through hole

12 m: movable part

13 m: fixing part

1 n: mask layer

11 n: mask opening

12 n: mask hole

13 n: the first mask via hole

14 n: second mask via hole

1o, 1 o': array hole sheet

11 o: hole of hole piece

12o, 12o' ": locating hole

13o' ": support part

AM 1: first bonding alignment mark

AM 2: second bonding alignment mark

AW: joint alignment mark window

C1: inflow chamber

C2: resonance chamber

C3: flow storage chamber

I: fluid inlet

M1: the first photoresist layer

M1 a: the first photoresist region

M2: the second photoresist layer

M2 a: second photoresist hole

M2 b: second photoresist opening

M3: flow channel layer

M31: flow channel inlet

M32: opening of cavity

M33: inflow channel

M4: the third photoresist layer

M41: third photoresist opening

P, P' ": positioning column

Detailed Description

Exemplary embodiments that embody features and advantages of this disclosure are described in detail below in the detailed description. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.

Referring to fig. 1A and 1B, in an embodiment of the present disclosure, a micro fluid actuator 100 includes: a first substrate 1a, a cavity layer 1b, a vibration layer 1c, a first metal layer 1d, a piezoelectric actuation layer 1e, an isolation layer 1f, a second metal layer 1g, a waterproof layer 1h, a second substrate 1i, a film glue layer 1j, an inlet layer 1k, a resonance layer 1M, a mask layer 1n, an array hole sheet 1o, a first photoresist layer M1, a second photoresist layer M2, a flow channel layer M3 and a third photoresist layer M4. The array hole sheet 1o, the first substrate 1a, the cavity layer 1b, the vibration layer 1c, the first metal layer 1d, the piezoelectric actuation layer 1e, the isolation layer 1f, the second metal layer 1g, the waterproof layer 1h, the second photoresist layer M2, the resonance layer 1M, the flow channel layer M3, and the inlet layer 1k are sequentially stacked and bonded to form a whole, and the process thereof is described below. In the first embodiment, the micro-fluid actuator 100 comprises an actuating unit 10.

Referring to fig. 2A, in the first embodiment of the present invention, the first substrate 1a is a silicon substrate. The first substrate 1a has a first surface 11a and a second surface 12a opposite to the first surface 11 a. In the first embodiment, the cavity layer 1b is formed on the first surface 11a of the first substrate 1a through a silicon dioxide material deposition process, which may be a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, or a combination thereof, but is not limited thereto. In the first embodiment, the vibration layer 1c is formed on the cavity layer 1b through a silicon nitride material deposition process.

Referring to fig. 2B and fig. 3, in the first embodiment, the vibration layer 1c is formed with a plurality of fluid grooves 11c and a vibration region 12c through an etching process. The fluid grooves 11c are symmetrically formed on opposite sides of the vibration layer 1c to define the vibration region 12 c. It should be noted that, in the first embodiment of the present invention, the etching process may be a wet etching process, a dry etching process or a combination of the two, but not limited thereto. It should be noted that, in the first embodiment of the present invention, the vibration layer 1c has two fluid grooves 11c respectively formed on two opposite sides of the vibration layer 1c in the longitudinal direction, but not limited thereto.

Referring to fig. 2C and 2D, in the first embodiment of the present invention, a first metal layer 1D is formed on the vibration layer 1C through a first metal material deposition process. In this embodiment, the first metal material is a titanium nitride metal material or a tantalum metal material, but not limited thereto. The first metal layer 1d is etched to form a lower electrode region 11d, a plurality of barrier regions 12d, a plurality of gaps 13d and a plurality of first bonding alignment marks AM 1. The lower electrode regions 11d are formed at positions corresponding to the vibration regions 12c of the vibration layer 1 c. A gap 13d is formed between the lower electrode region 11d and the barrier region 12 d. The barrier region 12d corresponds to a position outside the fluid trench 11c formed in the vibration layer 1 c. The first bonding alignment mark AM1 is formed on the barrier region 12 d.

Referring to fig. 2E and fig. 2F, in the first embodiment of the present invention, the piezoelectric actuation layer 1E is formed on the first metal layer 1d through a piezoelectric material deposition process, and an active region 11E is formed at a position corresponding to the lower electrode region 11d of the first metal layer 1d through an etching process.

Referring to fig. 2G and fig. 2H, in the first embodiment of the present invention, an isolation layer 1f is formed on the first metal layer 1d and the piezoelectric actuation layer 1e through a silicon dioxide material deposition process, and a plurality of spacers 11f are formed in the gaps 13d of the first metal layer 1d through an etching process.

Referring to fig. 2I and 2J, in the first embodiment of the present invention, a first photoresist layer M1 is formed on the first metal layer 1d, the piezoelectric actuation layer 1e and the isolation layer 1f by a photoresist Coating process, and a first photoresist region M1a is formed by a developing process, and it should be noted that the photoresist Coating process may be a Spin Coating (Spin Coating) process or a lamination (L amino rolling) process, but not limited thereto, and may be changed according to the process requirements.

Referring to fig. 2K, 2L and 3, in the first embodiment of the present invention, the second metal layer 1g is formed on the first metal layer 1d, the piezoelectric actuation layer 1e, the isolation layer 1f and the first photoresist region M1a of the first photoresist layer M1 through a second metal material deposition process, in the first embodiment of the present invention, the second metal material is a gold metal material or an aluminum metal material, but not limited thereto, the second metal layer 1g removes the first photoresist layer M1 through a lift-Off (L ift-Off) process to form a pad isolation region 11g, an upper electrode region 12g, an upper electrode pad 13g and a lower electrode pad 14g, the upper electrode pad 13g and the lower electrode pad 14g are formed on the first metal layer 1d and are located on two opposite sides of the actuation pad 11e of the piezoelectric actuation layer 1e, and the upper electrode pad 12g and the lower electrode pad 14g are separated from the lower electrode isolation region 11 g.

Referring to fig. 2M, in the first embodiment of the present invention, the waterproof layer 1h is formed on the first metal layer 1d, the second metal layer 1g and the isolation layer 1f through a coating process, and the upper electrode pad 13g and the lower electrode pad 14g of the second metal layer 1g are exposed through an etching process. It should be noted that, in the first embodiment of the present invention, the waterproof layer 1h is made of Parylene (Parylene) but not limited thereto. The parylene can be coated at room temperature, and has the advantages of strong coating property, high chemical resistance, good biocompatibility and the like. It should be noted that the waterproof layer 1h can prevent the first metal layer 1d, the piezoelectric actuation layer 1e and the second metal layer 1g from being corroded by the fluid to generate a short circuit phenomenon.

Referring to fig. 2N and 2O, in the first embodiment, a second photoresist layer M2 is formed on the first metal layer 1d, the second metal layer 1g and the waterproof layer 1h by a photoresist coating process, and a plurality of second photoresist holes M2a and a second photoresist opening M2b are formed by a developing process.

Referring to fig. 2P, fig. 2Q and fig. 4, in the first embodiment of the present invention, the second substrate 1i is a glass substrate. The film adhesive layer 1j is formed on the second substrate 1i through a rolling process. The inlet layer 1k is formed on the thin film adhesive layer 1j through a rolling process. In the first embodiment, the inlet layer 1k is made of Polyimide (PI), but not limited thereto. The thin film adhesive layer 1j and the inlet layer 1k are etched to form a plurality of fluid inlets I and a plurality of bonding alignment mark windows AW. The engagement alignment mark window AW is formed outside the fluid inlet I. It should be noted that the etching process for forming the fluid inlet I and the bonding alignment mark window AW is a dry etching process or a laser etching process, but not limited thereto. In the first embodiment of the present disclosure, the micro fluid actuator 100 has four fluid inlets I respectively located at four corners of the micro fluid actuator 100, and in other embodiments, the number and distribution of the fluid inlets I may vary according to design requirements.

Referring to fig. 2R, fig. 2S and fig. 4, in the first embodiment of the present invention, the runner layer M3 is formed on the inlet layer 1k through a photoresist coating process, and a plurality of runner inlets M31, a cavity opening M32 and a plurality of inflow channels M33 are formed through a developing process. The flow path inlets M31 communicate with the fluid inlets I of the inlet layer 1k, respectively. The flow channel inlet M31 and the inflow channel M33 are circumferentially disposed around the cavity opening M32. The inflow channel M33 communicates between the runner inlet M31 and the cavity opening M32. In the first embodiment of the present disclosure, the flow channel layer M3 has four flow channel inlets M31 and four inflow channels M33, and in other embodiments, the number of the flow channel inlets M31 and the number of the inflow channels M33 may be changed according to design requirements, and is not limited thereto. In the first embodiment, the runner layer M3 is a thick film photoresist, but not limited thereto.

Referring to fig. 2T and fig. 2U, in the first embodiment, the resonant layer 1M is formed on the channel layer M3 by a rolling process, and a cavity via 11M and a plurality of second bonding alignment marks AM2 are formed by an etching process. The resonant layer 1M covers the cavity opening M32 of the flow channel layer M3, thereby defining an inflow chamber C1. The cavity through hole 11M communicates with the inflow chamber C1 of the flow path layer M3. The second bonding alignment mark AM2 is formed outside the resonant layer 1 m. The resonant layer 1m extends from the cavity through hole 11m to an outer edge of the inflow chamber C1 to define a movable portion 12 m. The resonant layer 1m extending outward from the movable portion 12m to the second bonding alignment mark AM2 is defined as a fixed portion 13 m. It should be noted that the etching process for forming the resonant layer 1m is a dry etching process or a laser etching process, but not limited thereto.

Referring to fig. 2V, in the first embodiment, the resonant layer 1M is bonded on the second photoresist layer M2 by an inversion alignment process and a wafer bonding process. During the flip-chip alignment process, the alignment mark window AW is aligned with the corresponding first bonding alignment mark AM1 and the corresponding second bonding alignment mark AM2 to complete the alignment process. It should be noted that, in the first embodiment of the present invention, since the channel layer M3 and the second substrate 1i are Transparent, when the flip-chip Alignment process is performed, the manual Alignment can be performed by a Top-Side Transparent Alignment (Top-Side Transparent Alignment) method, so that the Alignment precision is required to be ± 10 μ M. In the first embodiment of the present disclosure, the resonant layer 1m is made of Polyimide (PI), but not limited thereto.

Referring to fig. 2W, in the first embodiment of the present disclosure, the second substrate 1i is removed by immersing the film adhesive layer 1j in a chemical to make the film adhesive layer 1j lose its adhesiveness. It should be noted that, in the first embodiment of the present disclosure, the time required for soaking the film adhesive layer 1j is very short, and the material characteristics of the film adhesive layer 1j and the flow channel layer M3 are different, so that the drug does not react to the flow channel layer M3, and the problem of Swelling (Swelling) does not occur.

Referring to fig. 2X to 2Z, in the first embodiment of the present invention, a mask layer 1n is formed on the second surface 12a of the first substrate 1a through a silicon dioxide material deposition process, and a mask opening 11n and a plurality of mask holes 12n are formed through an etching process so as to expose the first substrate 1 a. The second surface 12a of the first substrate 1a is formed with an opening trench 13a and a plurality of auxiliary trenches 14a along the mask opening 11n and the mask hole 12n, respectively, by an etching process. The outlet trench 13a and the auxiliary trench 14a have the same etching depth, and the etching depth is between the first surface 11a and the second surface 12a and is not in contact with the cavity layer 1 b. The auxiliary grooves 14a are symmetrically disposed at opposite sides of the outlet groove 13 a. A positioning pillar P is formed between each auxiliary trench 14a and the outlet trench 13 a.

Referring to fig. 2AA and 2AB, in the first embodiment of the present invention, a mask layer 1n is formed in the outlet trench 13a and the auxiliary trench 14a of the first substrate 1a by a silicon dioxide material deposition process, and a plurality of first mask vias 13n and a plurality of second mask vias 14n are formed in the outlet trench 13a by a fine via process. The second mask via holes 14n are symmetrically disposed outside the first mask via holes 13 n. In the first embodiment of the present disclosure, the aperture of the first mask via hole 13n is smaller than that of the second mask via hole 14n, but not limited thereto. The first mask via hole 13n and the second mask via hole 14n are formed to a depth such that they are in contact with the first substrate 1a, thereby exposing the first substrate 1 a. In the first embodiment, the precise via process is an excimer laser processing process, but not limited thereto.

Referring to fig. 2AC, fig. 2AD and fig. 5, in the first embodiment, the first substrate 1a is etched through a low temperature deep etching process on portions of the first substrate 1a corresponding to the first mask through holes 13n and the second mask through holes 14n to form a plurality of first outflow holes 15a and a plurality of second outflow holes 16a of the first substrate 1 a. The first outflow holes 15a are formed by etching along the first mask via holes 13n until they contact the cavity layer 1b, and the second outflow holes 16a are formed by etching along the second mask via holes 14n until they contact the cavity layer 1 b. Thereby, the second outflow holes 16a are arranged outside the first outflow holes 15a, and the diameter of each second outflow hole 16a is larger than the diameter of each first outflow hole 15 a. In the first embodiment, the low temperature deep etching Process is a deep reactive ion etching (BOSCH Process), but not limited thereto. In the first embodiment, each first outflow hole 15a and each second outflow hole 16a have a square cross section, but not limited thereto.

It should be noted that, in the first embodiment of the present invention, the mask layer 1n utilizes an excimer laser processing process to form the first mask via 13n and the second mask via 14n to overcome the problems of difficult photoresist coating and difficult contact mask exposure focusing. In addition, in the first embodiment of the present invention, the deep reactive ion etching Process (BOSCH Process) belongs to a low temperature Process, which can prevent the depolarization reaction caused by the high temperature generated by the processing that affects the polarity distribution of the back-end piezoelectric material. Furthermore, in the first embodiment of the present invention, the hole formed by the deep reactive ion etching Process (BOSCH Process) has a high Aspect Ratio (Aspect Ratio), so the etching depth of the hole is preferably 100 μm, and the aperture of the hole can reach less than 10 μm, thereby maintaining the strength of the structure. In the first embodiment, the outlet trench 13a is disposed such that the number of through holes formed by a deep reactive ion etching Process (BOSCH Process) is reduced.

Referring to fig. 2AD, in the first embodiment, the cavity layer 1b is further etched to form a flow storage cavity C3 by a wet etching process. That is, the etching solution flows in from the first mask via 13n and the second mask via 14n, flows to the cavity layer 1b through the first outflow hole 15a and the second outflow hole 16a, and etches and releases the portion of the cavity layer 1b, thereby defining the flow storage chamber C3. Thereby, the reservoir chamber C3 communicates with the first and second outlet holes 15a and 16 a. It is noted that the mask layer 1n is also removed while the flow storage chamber C3 is formed by a wet etching process. After the formation of the flow storage chamber C3 and the removal of the mask layer 1n are completed, the first outflow hole 15a and the second outflow hole 16a communicate with the outlet groove 13 a.

It should be noted that, in the first embodiment of the present invention, since the distance between two sides around the fluid storage chamber C3 is slightly larger than the distance between two sides of the outlet groove 13a, the arrangement of the second outflow holes 16a having a larger diameter than the first outflow holes 15a facilitates the cavity undercut of the fluid storage chamber C3.

Referring to fig. 2AE to 2AG, in the first embodiment, a third photoresist layer M4 is formed on the inlet layer 1k through a rolling process, and a plurality of third photoresist openings M41 are formed through a developing process. The third photoresist opening M41 is disposed corresponding to the positions of the upper electrode pad 13g and the lower electrode pad 14 g. The upper electrode pad 13g and the lower electrode pad 14g are etched to remove the structures on the upper electrode pad 13g and the lower electrode pad 14g, so that the upper electrode pad 13g and the lower electrode pad 14g are exposed. In the first embodiment, the third photoresist layer M4 is a hard mask dry film photoresist, but not limited thereto. It should be noted that, in order to avoid insufficient structural support after the etching of the first substrate 1a, the coating of the third photoresist layer M4 may be performed after the wafer bonding process of the resonance layer 1M and the second photoresist layer M2 is completed, but not limited thereto.

Referring to fig. 2AH and fig. 5, in the first embodiment of the present invention, the array aperture plate 1o has a plurality of aperture plate holes 11o and a plurality of positioning holes 12o, and is attached to the outlet groove 13a and the auxiliary groove 14 of the first substrate 1a through a bonding process. The hole piece holes 11o, the first outflow holes 15a and the second outflow holes 16a are disposed in a staggered manner, so as to seal the first outflow holes 15a and the second outflow holes 16a to form a check valve, thereby preventing fluid from flowing back during fluid transmission. The positioning posts P of the first substrate 1a pass through the positioning holes 12o, respectively. In the first embodiment of the present disclosure, the positioning columns P of the first substrate 1a are disposed such that the array hole pieces 1o can be manually positioned and fixed by gluing, and in other embodiments, the array hole pieces 1o can be positioned by optical auto-alignment, so as to increase the arrangement density of the hole piece holes 11o of the array hole pieces 1o and the first outflow holes 15a and the second outflow holes 16a of the first substrate 1 a. In the first embodiment of the present disclosure, the aperture of each positioning hole 12o is larger than the aperture of each positioning post P by 50 μm, but not limited thereto. In the first embodiment, the array hole plate 1o is made of Polyimide (PI), but not limited thereto. In the first embodiment of the present disclosure, the array aperture plate 1o has two positioning apertures 12o, and in other embodiments, the number of the positioning apertures 12o may be changed according to design requirements, but is not limited thereto.

Referring to fig. 3, it should be noted that in the first embodiment of the present invention, two fluid grooves 11c of the vibration layer 1c are respectively formed on two opposite sides of the vibration layer 1c in the longitudinal direction, so that the vibration layer 1c can be deformed in the longitudinal direction by the lateral support of the vibration layer 1 c.

Referring to fig. 1A, 1B, and 6A to 6E, in the first embodiment of the present invention, the micro-fluid actuator 100 is specifically operated by providing driving power sources with different phase charges to the upper electrode pad 13g and the lower electrode pad 14g to drive and control the vibration region 12c of the vibration layer 1c to generate vertical displacement. As shown in fig. 1A and fig. 6A, when a negative voltage is applied to the upper electrode pad 13g and a positive voltage is applied to the lower electrode pad 14g, the active region 11e of the piezoelectric actuation layer 1e drives the vibration region 12c of the vibration layer 1c to displace toward the direction approaching the first substrate 1A. Thereby, the external fluid is sucked into the micro fluid actuator 100 from the fluid inlet I, and the fluid entering the micro fluid actuator 100 then flows to the inflow chamber C1 through the flow channel inlet M31 and the inflow channel M33 of the flow channel layer M3, and then flows to the inner resonance chamber C2 through the cavity through hole 11M of the resonance layer 1M. As shown in fig. 1A and fig. 6B, the voltage application to the upper electrode pad 13g and the lower electrode pad 14g is stopped, so that the active region 11e of the piezoelectric actuation layer 1e drives the vibration region 12c of the vibration layer 1c to return to the non-actuated position. At this time, the movable portion 12m of the resonance layer 1m is displaced by resonance, and is displaced in a direction approaching the first substrate 1a and attached to the waterproof layer 1h, so that the cavity through hole 11m of the resonance layer 1m is not communicated with the resonance cavity C2. Thereby, the fluid in the resonance chamber C2 is squeezed and collected into the fluid storage chamber C3 of the cavity layer 1b through the fluid grooves 11C of the vibration layer 1C. As shown in fig. 1A and 6C, the electrical properties of the upper electrode pad 13g and the lower electrode pad 14g are then switched, and a positive voltage is applied to the upper electrode pad 13g and a negative voltage is applied to the lower electrode pad 14g, such that the vibration region 12C of the vibration layer 1C is displaced in a direction away from the first substrate 1A, and the movable portion 12m of the resonance layer 1m returns to a position where no resonance displacement is generated, so that the volume in the resonance chamber C2 is compressed by the vibration layer 1C, and the fluid collected in the fluid storage chamber C3 starts to be injected into the first outflow hole 15a and the second outflow hole 16 a. As shown in fig. 1A and fig. 6D, the application of the voltage to the upper electrode pad 13g and the lower electrode pad 14g is stopped, so that the active region 11e of the piezoelectric actuation layer 1e drives the vibration region 12c of the vibration layer 1c to return to the unactuated position. At this time, the movable portion 12m of the resonance layer 1m is displaced by resonance, displaced in a direction away from the first substrate 1a, and attached to the inlet layer 1k, so that the cavity through hole 11m of the resonance layer 1m is not in communication with the inflow chamber C1. Thereby, the fluid in the reservoir chamber C3 is pushed through the first and second outlet holes 15a and 16a to push the array hole piece 1o away. As shown in fig. 1A and 6E, when the movable portion 12m of the resonant layer 1m stops resonating and returns to the position where no resonant displacement occurs, the fluid passes through the aperture holes 11o of the array aperture 1o and is discharged out of the microfluidic actuator 100, so as to complete the fluid transfer.

Referring to fig. 7A, the second embodiment is substantially the same as the first embodiment except that the micro-fluid actuator 100' includes two actuating units 10 to increase the flow output.

Referring to fig. 7B, in another embodiment of the present disclosure, the micro-fluid actuator 100 ″ includes a plurality of actuating units 10. The plurality of actuating units 10 may be arranged in series, in parallel, or in series-parallel to increase the flow output, and the arrangement of the plurality of actuating units 10 may be designed according to the usage requirement, which is not limited thereto.

Referring to fig. 8, a third embodiment of the present invention is substantially the same as the first embodiment, except that the positioning posts P ' "of the micro-fluidic actuator 100'" and the positioning holes 12o ' "of the array hole plate 1o '" are symmetrically disposed at opposite corners of the first substrate 1a ' ", and each of the first outflow holes 15a '" and each of the second outflow holes 16a ' "has a circular cross section. In addition, the array hole piece 1o ' "has a frame portion 13o '" for increasing the extension amount of the array hole piece 1o ' "to achieve a spring effect. In the third embodiment of the present disclosure, the array hole sheet 1o '"can be used to filter impurities in the fluid, thereby increasing the reliability and the lifetime of the elements in the microfluidic actuator 100'".

Referring to fig. 9A to 9C, a fourth embodiment of the present invention is substantially the same as the first embodiment except that the flip-chip process and the wafer bonding process are different. Because the difference of the heat conduction between the first substrate 1a and the second substrate 1i is large, and the wafer bonding process is prone to have problems of thermal stress and bubbles (Void), the first substrate 1a, the cavity layer 1b, the vibration layer 1c, the first metal layer 1d, the piezoelectric actuation layer 1e, the isolation layer 1f, the second metal layer 1g, the waterproof layer 1h, the second photoresist layer M2 and the resonance layer 1M are formed into a single semi-finished product, then the rolling and developing processes are performed on the inlet layer 1k to form the flow channel layer M3, and finally the inlet layer 1k and the flow channel layer M3 are turned over to perform optical double-sided alignment with the single semi-finished product in a Flip Chip (Flip Chip) manner to complete the bonding. In addition, in order to reduce the possibility of the first substrate 1a being brittle after the etching process, the bonding surface may be subjected to an activation process prior to the hot pressing, thereby reducing the pressure during the hot pressing. In the fourth embodiment, the inlet layer 1k is made of an electroformed or stainless steel material, so as to increase the rigidity of the inlet layer 1k, but not limited thereto.

The present invention provides a micro-fluid actuator, which is mainly completed by a micro-electro-mechanical process, and a driving power supply with different phase charges is applied to an upper electrode pad and a lower electrode pad, so that a vibration region of a vibration layer is displaced up and down, and further fluid transmission is achieved. In addition, by pasting a burst of cracking hole pieces on the outflow holes to be used as a one-way valve, the occurrence of fluid backflow is avoided, the application value of the industry is high, and the application is legally provided.

Various modifications may be made by those skilled in the art without departing from the scope of the invention as defined by the appended claims.