阅读说明：本技术 电磁波衰减体及电子装置 (Electromagnetic wave attenuator and electronic device ) 是由 喜喜津哲 黑崎义成 山田健一郎 松中繁树 于 2020-01-10 设计创作，主要内容包括：提供能够使电磁波的衰减特性提高的电磁波衰减体及电子装置。根据实施方式,电磁波衰减体包括多个磁性层和导电性的多个非磁性层。从所述多个磁性层中的一个磁性层向所述多个磁性层中的另一个磁性层的方向沿着第1方向。所述多个非磁性层中的一个非磁性层位于所述多个磁性层中的所述一个磁性层与所述多个磁性层中的所述另一个磁性层之间。所述多个磁性层中的所述一个磁性层的沿着所述第1方向的第1厚度为所述多个非磁性层中的所述一个非磁性层的沿着所述第1方向的第2厚度的1/2倍以上。所述多个磁性层的数量为3以上。(Provided are an electromagnetic wave attenuator and an electronic device, which can improve the attenuation characteristics of electromagnetic waves. According to an embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers and a plurality of non-magnetic layers that are electrically conductive. A direction from one of the plurality of magnetic layers to another of the plurality of magnetic layers is along a1 st direction. One of the plurality of nonmagnetic layers is located between the one of the plurality of magnetic layers and the other of the plurality of magnetic layers. A1 st thickness of the one of the plurality of magnetic layers along the 1 st direction is 1/2 times or more greater than a2 nd thickness of the one of the plurality of nonmagnetic layers along the 1 st direction. The number of the plurality of magnetic layers is 3 or more.)

1. An electromagnetic wave attenuator is provided with:

a plurality of magnetic layers; and

a plurality of non-magnetic layers that are electrically conductive,

a direction from one of the plurality of magnetic layers to another of the plurality of magnetic layers is along a1 st direction,

one of the plurality of nonmagnetic layers is located between the one of the plurality of magnetic layers and the other of the plurality of magnetic layers,

a1 st thickness of the one of the plurality of magnetic layers along the 1 st direction is 1/2 times or more greater than a2 nd thickness of the one of the plurality of nonmagnetic layers along the 1 st direction,

the number of the plurality of magnetic layers is 3 or more.

2. The electromagnetic wave attenuator according to claim 1,

the one of the plurality of magnetic layers includes grains,

the average value of the grain diameters is 40nm or less.

3. The electromagnetic wave attenuator according to claim 1,

the one of the plurality of magnetic layers includes a1 st face opposed to the one of the plurality of nonmagnetic layers,

the 1 st face comprises a1 st top portion and a1 st bottom portion,

a distance between the 1 st top portion and the 1 st bottom portion along the 1 st direction is 10nm or more.

4. The electromagnetic wave attenuator according to claim 1,

the one of the plurality of magnetic layers includes a1 st face opposed to the one of the plurality of nonmagnetic layers,

the 1 st surface comprises a1 st top part, a2 nd top part and a1 st bottom part,

a position of the 1 st bottom in the 2 nd direction intersecting the 1 st direction is located between a position of the 1 st top in the 2 nd direction and a position of the 2 nd top in the 2 nd direction,

at least a portion of the one of the plurality of nonmagnetic layers is located between the 1 st top and the 2 nd top in the 2 nd direction.

5. The electromagnetic wave attenuator according to claim 1,

the at least one of the plurality of magnetic layers includes a magnetic domain wall.

6. The electromagnetic wave attenuator according to claim 1,

the at least one of the plurality of magnetic layers includes a plurality of magnetic films and a plurality of non-magnetic films,

a direction from one of the plurality of magnetic films to another of the plurality of magnetic films is along the 1 st direction,

one of the plurality of nonmagnetic films is located between the one of the plurality of magnetic films and the other of the plurality of magnetic films,

a3 rd thickness of the one of the plurality of magnetic films along the 1 st direction is thicker than a4 th thickness of the one of the plurality of non-magnetic films along the 1 st direction,

the 4 th thickness is 0.5nm or more and 7nm or less.

7. The electromagnetic wave attenuator according to claim 1,

an orientation of magnetization in at least a portion of one of the plurality of magnetic layers crosses an orientation of magnetization in at least a portion of another one of the plurality of magnetic layers.

8. An electronic device is provided with:

the electromagnetic wave attenuating body according to claim 1; and

an electronic component.

Technical Field

Embodiments of the present invention provide an electromagnetic wave attenuator and an electronic device capable of improving the attenuation characteristics of electromagnetic waves.

Background

For example, electromagnetic wave attenuators such as electromagnetic shielding sheets have been proposed. There are electronic devices including electromagnetic wave attenuators and semiconductor elements. In an electromagnetic wave attenuator, it is desired to improve the attenuation characteristics of electromagnetic waves.

Disclosure of Invention

Embodiments of the present invention provide an electromagnetic wave attenuator and an electronic device capable of improving the attenuation characteristics of electromagnetic waves.

Means for solving the problems

According to an embodiment of the present invention, an electromagnetic wave attenuator includes a plurality of magnetic layers and a plurality of non-magnetic layers that are electrically conductive. A direction from one of the plurality of magnetic layers to another of the plurality of magnetic layers is along a1 st direction. One of the plurality of nonmagnetic layers is located between the one of the plurality of magnetic layers and the other of the plurality of magnetic layers. A1 st thickness of the one of the plurality of magnetic layers along the 1 st direction is 1/2 times or more greater than a2 nd thickness of the one of the plurality of nonmagnetic layers along the 1 st direction. The number of the plurality of magnetic layers is 3 or more.

According to the electromagnetic wave attenuator and the electronic device having the above-described configurations, an electromagnetic wave attenuator and an electronic device capable of improving the attenuation characteristics of electromagnetic waves can be provided.

Drawings

Fig. 1 (a) to 1 (c) are schematic views illustrating an electromagnetic wave attenuator according to embodiment 1.

Fig. 2 (a) and 2 (b) are graphs illustrating characteristics of the electromagnetic wave attenuator.

Fig. 3 (a) and 3 (b) are graphs illustrating characteristics of the electromagnetic wave attenuator.

Fig. 4 is a graph illustrating a simulation result of characteristics of the electromagnetic wave attenuator.

Fig. 5 (a) to 5 (d) are graphs illustrating characteristics of the electromagnetic wave attenuator.

Fig. 6 (a) to 6 (d) are graphs illustrating characteristics of the electromagnetic wave attenuator.

Fig. 7 is a schematic cross-sectional view illustrating an electromagnetic wave attenuator.

Fig. 8 (a) to 8 (d) are schematic views illustrating an electromagnetic wave attenuator.

Fig. 9 is a schematic cross-sectional view illustrating an electromagnetic wave attenuator.

Fig. 10 is a graph illustrating magnetic characteristics of the electromagnetic wave attenuator.

Fig. 11 (a) and 11 (b) are graphs illustrating characteristics of the electromagnetic wave attenuator.

Fig. 12 is a schematic plan view illustrating the electromagnetic wave attenuator according to embodiment 1.

Fig. 13 is a schematic cross-sectional view illustrating an electromagnetic wave attenuator according to embodiment 1.

Fig. 14 (a) to 14 (d) are schematic views illustrating an electronic device according to embodiment 2.

Fig. 15 (a) to 15 (d) are schematic cross-sectional views illustrating a part of the electronic device according to embodiment 2.

Fig. 16 is a schematic cross-sectional view illustrating an electronic device according to embodiment 2.

Fig. 17 is a schematic cross-sectional view illustrating an electronic device according to embodiment 2.

Fig. 18 is a schematic cross-sectional view illustrating an electronic device according to embodiment 2.

Fig. 19 is a schematic cross-sectional view illustrating an electronic device according to embodiment 2.

Fig. 20 is a schematic cross-sectional view illustrating an electronic device according to embodiment 2.

Fig. 21 is a schematic cross-sectional view illustrating an electronic device according to embodiment 2.

Description of the reference symbols

10 … electromagnetic wave attenuator, shoulder portion delayed by 10HS …, 1 st to 4 th side surface portions of 10a to 10D …, 10p … planar portion, 10s … base, 11 … magnetic layer, 11D … magnetic domain, 11G … crystal grain, 11W … magnetic domain wall region, 11af … 1 st surface, 11dp … 1 st bottom, 11f … magnetic film, 11pm … magnetization, 11pp … 1 st top, 11pq … nd 2 nd top, 12 … nonmagnetic layer, 12f … nonmagnetic film, 13, 14 … conductive layer, 41, 42 … insulating portion, 50 … electronic element, 50C … semiconductor chip, 50e … electrode, 50f … substrate connecting portion, 50I … insulating portion, 50t … terminal, 50W … wiring, 51B, 52, 53B, 53C … electronic element, 50I, 52I, N … connecting portion, 3655 connecting portion, 60 … substrate, 81 … electromagnetic wave, 81a … vibration direction, theta … angle, 110-116 … electronic device, 220 … mounting component, AA … arrow, 1 st to 3 rd directions of D1-D3 …, 2 nd direction of De2 …, Ha … magnetic field, M1 … magnetization, the number of Ns …, Sa 1-Sa 4, Sb 1-Sb 4, Sc1, Sz1, Sz2 … samples, Sx1 … characteristic, T, T10, T20 … transmission characteristic, T11, T21 … standardized transmission characteristic, D11 … diameter, dz … distance, f … frequency, T1-T4 … 1 st to 4 th thicknesses

Detailed Description

Embodiments of the present invention will be described below with reference to the drawings.

The drawings are schematic or conceptual drawings, and the relationship between the thickness and width of each portion, the ratio of the sizes of the portions, and the like are not necessarily limited to the same ones as in reality. Even when the same portions are indicated, there are cases where the sizes and/or ratios thereof are indicated to be different from each other in accordance with the drawings.

In the present specification and the drawings, the same elements as those described above with respect to the existing drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(embodiment 1)

Fig. 1 (a) to 1 (c) are schematic views illustrating an electromagnetic wave attenuator according to embodiment 1.

In fig. 1 (c), the positions of the plurality of layers are depicted in a shifted manner for clarity of illustration.

As shown in fig. 1 (a) and 1 (c), the electromagnetic wave attenuator 10 according to the embodiment includes a plurality of magnetic layers 11 and a plurality of conductive nonmagnetic layers 12. The plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12 are alternately arranged along the 1 st direction. The orientation from one of the plurality of magnetic layers 11 to another of the plurality of magnetic layers 11 is along the 1 st direction. For example, the plurality of magnetic layers 11 are aligned along the 1 st direction. The orientation from one of the plurality of nonmagnetic layers 12 to another of the plurality of nonmagnetic layers 12 is along the 1 st direction. For example, the plurality of nonmagnetic layers 12 are arranged along the 1 st direction. One of the plurality of nonmagnetic layers 12 is located between one of the plurality of magnetic layers 11 and another of the plurality of magnetic layers 11. One of the plurality of magnetic layers 11 is located between one of the plurality of nonmagnetic layers 12 and another one of the plurality of nonmagnetic layers 12.

The 1 st direction is set as the Z-axis direction. One direction perpendicular to the Z-axis direction is set as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is referred to as the Y-axis direction.

At least a portion of the plurality of magnetic layers 11 is, for example, parallel to the X-Y plane. At least a portion of the plurality of nonmagnetic layers 12 is, for example, parallel to the X-Y plane.

As shown in fig. 1 (a), the electromagnetic wave attenuator 10 may include a base 10 s. For example, a plurality of magnetic layers 11 and a plurality of nonmagnetic layers 12 are alternately formed on the base 10 s.

As shown in fig. 1 (b), a conductive layer 13, a conductive layer 14, and the like may be provided. The conductive layer 13 is in contact with the substrate 10s, for example. The conductive layer 13 is in contact with one of the magnetic layer 11 and the nonmagnetic layer 12. The conductive layer 13 may function as a base layer, for example. The conductive layer 13 can improve the adhesion between the substrate 10s and one of the magnetic layer 11 and the nonmagnetic layer 12. For example, a plurality of magnetic layers 11 and a plurality of nonmagnetic layers 12 are provided between the conductive layer 13 and the conductive layer 14. The conductive layer 14 may function as a protective layer, for example. The thickness of each of the conductive layers 13 and 14 may be, for example, 100nm or more. The conductive layers 13 and 14 may be made of stainless steel, Cu, or the like. The conductive layers 13 and 14 may be magnetic or non-magnetic.

In the embodiment, the base 10s in one example is a mold resin or the like. The substrate 10s in other examples may be a resin layer or the like. The resin layer is provided on, for example, a plastic sheet. In an embodiment, the surface of the substrate 10s may have irregularities. In this case, as described later, the plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12 may have an uneven shape along the unevenness.

As shown in fig. 1 (a), the thickness of one of the plurality of magnetic layers 11 is set to 1 st thickness t 1. The thickness of one of the plurality of nonmagnetic layers 12 is set to the 2 nd thickness t 2.

In an embodiment, the 1 st thickness t1 of at least one of the plurality of magnetic layers 11 is greater than or equal to 1/2 times the 2 nd thickness t2 of at least one of the plurality of nonmagnetic layers 12. For example, the 2 nd thickness t2 may be the same as the 1 st thickness t 1. The 2 nd thickness t2 is 2 times or less the 1 st thickness t 1. The 1 st thickness t1 and the 2 nd thickness t2 are lengths along the 1 st direction (Z axis direction).

In the embodiment, the number of the plurality of magnetic layers 11 is 3 or more. In one example, the number of the plurality of nonmagnetic layers 12 is the same as the number of the plurality of magnetic layers 11. The difference between the number of the plurality of nonmagnetic layers 12 and the number of the plurality of magnetic layers 11 may be 1 or-1. The number of the plurality of magnetic layers 11 may be 5 or more, for example.

As shown in fig. 1 (c), an electromagnetic wave 81 is incident on the electromagnetic wave attenuator 10 having such a configuration. It is understood that in the embodiment, the electromagnetic wave 81 can be effectively attenuated in the frequency band of 200MHz or less. The electromagnetic wave attenuator 10 can be used as an electromagnetic wave shield, for example. For example, at least one of the plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12 is grounded (see fig. 1 (a)).

Hereinafter, an example of the measurement result of the characteristics of the electromagnetic wave attenuator will be described.

During measurement, the electromagnetic wave 81 enters the electromagnetic wave attenuator 10 along the Z-axis direction (see fig. 1 (c)).

Fig. 2 (a), 2 (b), 3 (a) and 3 (b) are graphs illustrating characteristics of the electromagnetic wave attenuator.

These figures show measurement results of characteristics of an electromagnetic wave that has transmitted through the electromagnetic wave attenuator when the electromagnetic wave 81 is incident on the electromagnetic wave attenuator. The horizontal axis of these figures represents the frequency f (mhz) of the electromagnetic wave 81. Fig. 2 (a) and 3 (a) show characteristics at low frequencies (1MHz to 100 MHz). Fig. 2 (b) and 3 (b) show characteristics of high frequency (10MHz to 10000 MHz). Since the configuration of the apparatus used between the measurement of the low frequency and the measurement of the high frequency (including the gain of the amplifier and the like) is different, the relative characteristics of the electromagnetic wave transmitted through the electromagnetic wave attenuator will be described below. In fig. 2 (a) and 3 (a), the vertical axis represents the transmission characteristic T10(dB) of the electromagnetic wave 81. In fig. 2 (b) and 3 (b), the vertical axis represents the transmission characteristic T20(dB) of the electromagnetic wave 81. The low transmission characteristics T10 and T20 (large absolute values) correspond to a large degree of attenuation of the electromagnetic wave 81 incident on the electromagnetic wave attenuator. The transmission characteristics T10 and T20 are preferably low (large in absolute value).

Fig. 2 (a) and 2 (b) show the results of samples Sa1, Sa2, Sz1, and Sz 2.

In samples Sa1 and Sa2, a combination of magnetic layer 11 and nonmagnetic layer 12 was provided. In one combination, magnetic layer 11 is a layer of NiFeCuMo having a thickness (1 st thickness t1) of 100 nm. In one combination, nonmagnetic layer 12 is a Cu layer with a thickness (No. 2 thickness t2) of 100 nm.

In sample Sa1, the number Ns of combinations including one magnetic layer 11 and one nonmagnetic layer 12 was 10. In sample Sa2, the number Ns of combinations including one magnetic layer 11 and one nonmagnetic layer 12 was 20.

In sample Sz1, a NiFeCuMo layer having a thickness of 2 μm was used as the electromagnetic wave attenuator. In sample Sz2, a NiFeCuMo layer having a thickness of 4 μm was used as the electromagnetic wave attenuator. In samples Sz1 and Sz2, only the magnetic layer and no nonmagnetic layer were provided as the electromagnetic wave attenuators.

In fig. 3 (a) and 3 (b), the results of the samples Sb1 and Sb2 are shown in addition to the above-described samples Sz1 and Sz 2.

In samples Sb1 and Sb2, a combination of the magnetic layer 11 and the nonmagnetic layer 12 was provided. In one combination, magnetic layer 11 is a layer of NiFeCuMo having a thickness (thickness t1, 1) of 50 nm. In one combination, nonmagnetic layer 12 is a Ta layer with a thickness (No. 2 thickness t2) of 5 nm.

In the sample Sb1, the number Ns of combinations including one magnetic layer 11 and one nonmagnetic layer 12 was 37. In the sample Sb2, the number Ns of combinations including one magnetic layer 11 and one nonmagnetic layer 12 was 73.

In samples Sa1, Sa2, Sb1, Sb2, Sz1, and Sz2, a combination of a plurality of magnetic layers 11 and a plurality of nonmagnetic layers 12 or a NiFeCuMo layer is formed on a resin substrate (base 10 s). In these samples, the surface of the resin substrate had irregularities having a height of about 0.5 μm. The combination of the plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12 or the NiFeCuMo layer has an uneven shape along the unevenness.

As shown in fig. 2 (a) and 2 (b), in the samples Sa1 and Sa2, the transmission characteristics T10 and T20 were low as compared with the samples Sz1 and Sz2 in which the nonmagnetic layer was not provided. For example, in the region of 1000MHz or less, the transmission characteristics T10 and T20 of the samples Sa1 and Sa2 are low. In particular, the samples Sa1 and Sa2 have low transmittance T10 and transmittance T20 in a wide frequency range of 10MHz to 500 MHz.

As shown in fig. 3 (a) and 3 (b), in samples Sb1 and Sb2, transmission characteristics T10 and T20 were also low as compared with samples Sz1 and Sz2 in which a nonmagnetic layer was not provided. For example, in the region of 1000MHz or less, the transmission characteristics T10 and T20 of the samples Sb1 and Sb2 were low. In particular, in the region of 2MHz to 100MHz, the transmission characteristics T10 and T20 of the samples Sb1 and Sb2 were low. The samples Sb1 and Sb2 showed superior transmission characteristics in the frequency range of 2MHz to 5MHz as compared with the samples Sa1 and Sa 2.

As shown in fig. 2 (a), in the samples Sz1 and Sz2, the transmission characteristic T10 largely rises as the frequency f increases. From the results, it is considered that in the samples Sz1 and Sz2, an eddy current is generated in the NiFeCuMo layer by the incident electromagnetic wave 81, and the effect of attenuating the electromagnetic wave 81 is generated by the eddy current.

On the other hand, it is known that when an electromagnetic wave 81 is incident on an electromagnetic wave attenuator including a plurality of laminated magnetic layers and a plurality of nonmagnetic conductive layers, the attenuation characteristics of the electromagnetic wave 81 are improved. It is considered that the electromagnetic wave 81 is generated by multiple reflection due to a difference in impedance at the interface between the magnetic layer and the nonmagnetic conductive layer and by superposition of eddy current loss in the nonmagnetic conductive layer. When the magnetic permeability of the magnetic layer 11 is large, the reflectance at the interface becomes large. In the vicinity of the frequency at which ferromagnetic resonance occurs, the magnetic permeability of the magnetic layer 11 increases, and therefore the damping characteristic improves. In general, in the case of a normal magnetic material, the frequency f at which ferromagnetic resonance occurs is 300MHz or more. It is difficult to obtain a ferromagnetic resonance frequency lower than 300 MHz.

A simulation example of the attenuation characteristics of the electromagnetic wave 81 will be described below. In this simulated model, the electromagnetic wave 81 is reflected due to the impedance difference at the interface between the magnetic layer and the nonmagnetic layer, and is superimposed on the eddy current loss in the nonmagnetic conductive layer, whereby the electromagnetic wave 81 is attenuated.

Fig. 4 is a graph illustrating a simulation result of characteristics of the electromagnetic wave attenuator.

In the simulation of fig. 4, the Schelkunoff formula is used. By this formula, the electromagnetic wave attenuation of the multilayer film can be analyzed. This formula is generally widely used as a formula describing the behavior of the electromagnetic wave 81 attenuated by the influence of the impedance difference at the interface between the magnetic layer and the nonmagnetic layer. In the simulation model of fig. 4, physical property values close to the properties of NiFeCuMo are applied to the magnetic layer 11 with respect to the NiFe layer. The thickness of the magnetic layer 11 (1 st thickness t1) was 100 nm. The physical property value of Cu is applied to the nonmagnetic layer 12, and the thickness (No. 2 thickness t2) of the nonmagnetic layer 12 is changed within the range of 10nm to 400 nm. The number Ns of combinations including one magnetic layer 11 and one nonmagnetic layer 12 is 10. The horizontal axis of fig. 4 is the frequency f (mhz). The vertical axis represents the transmission characteristic t (db). The values on the vertical axis are adjusted to correspond to the device configuration and the settings of the amplifier and the like used in the above experiment.

As shown in fig. 4, in the simulation considering the attenuation due to the impedance difference at the interface between the magnetic layer and the nonmagnetic layer, the transmission characteristic T has a valley (minimum value). The frequency f corresponding to the valley is about 300 MHz. This frequency f corresponds to the frequency f at which ferromagnetic resonance occurs.

On the other hand, as described with respect to fig. 2 (a), 2 (b), 3 (a), and 3 (b), in the samples Sa1, Sa2, Sb1, and Sb2, the transmittance characteristics T10 and T20 are low in the region of 200MHz or less in particular. In FIG. 4, the structure of the sample Sa1 corresponds to the structure of the 2 nd thickness t2 of 100 nm. The characteristic at the time when the 2 nd thickness T2 in fig. 4 is 100nm is greatly different from the characteristic (transmission characteristic T20) regarding the sample Sa1 shown in fig. 2 b. The characteristic at the time when the 2 nd thickness T2 in fig. 4 is 100nm is greatly different from the characteristic (transmission characteristic T10) regarding the sample Sa1 shown in (a) of fig. 2.

Accordingly, it is considered that the characteristics observed in the samples Sa1, Sa2, Sb1, and Sb2 are not caused by a generally known phenomenon (that is, a phenomenon in which an eddy current loss is superimposed on a nonmagnetic conductive layer due to a resistance difference at an interface between a magnetic layer and a nonmagnetic layer).

The low transmission characteristic obtained at low frequencies f below 200MHz cannot be explained by ferromagnetic resonance. It is believed that the attenuation at low frequencies f occurs due to a different effect than ferromagnetic resonance. For example, domain wall regions (and magnetic domains) are provided in the plurality of magnetic layers 11, and the domain wall regions interact between the plurality of layers, whereby attenuation at a low frequency f may occur.

As is clear from fig. 4, when the thickness of the conductive nonmagnetic layer (the 2 nd thickness T2) is large, the transmission characteristic T becomes low (the absolute value becomes large). In the case of a mechanism based on which multiple reflections caused by a difference in impedance at the interface between the magnetic layer and the nonmagnetic layer are superimposed on the attenuation characteristics of the electromagnetic wave 81 caused by the eddy current of the conductive nonmagnetic layer, it is natural that the transmission characteristic T becomes lower when the 2 nd thickness T2 is thick. Therefore, in the concept based on the general understanding, it is preferable to thicken the thickness (2 nd thickness t2) of the nonmagnetic layer 12. In the case of the above-described concept, it is generally considered preferable that the 2 nd thickness t2 (e.g., 400nm) is 4 times or more as large as the 1 st thickness t1 (e.g., 100nm), for example.

In contrast, the embodiment has an effect different from the conventionally known effect. Accordingly, in an embodiment, the 1 st thickness t1 may be 1/2 times or more the 2 nd thickness t 2. For example, the 2 nd thickness t2 may be as thin as 2 times or less the 1 st thickness t 1. When such a thin nonmagnetic layer 12 is used, a low transmission characteristic can be obtained even at a low frequency f. According to the embodiment, an electromagnetic wave attenuator capable of improving the attenuation characteristics of an electromagnetic wave can be provided. For example, by using the thin nonmagnetic layer 12, a low transmission characteristic can be obtained not only in a frequency range exceeding 200MHz but also at a low frequency f (for example, 1MHz to 100MHz) at which it is difficult to obtain a low transmission characteristic by the conventional technique.

Fig. 5 (a) to 5 (d) and fig. 6 (a) to 6 (d) are graphs illustrating characteristics of the electromagnetic wave attenuator.

In fig. 5 (a) to 5 (d), characteristics of the samples Sa3 and Sa4 are described in addition to the samples Sz1, Sz2, Sa1 and Sa 2. In sample Sa3, the number Ns was 3. In sample Sa4, the number Ns was 5. The other configurations of the samples Sa3 and Sa4 are the same as those of the samples Sa1 and Sa 2.

In fig. 6 (a) to 6 (d), the characteristics of the samples Sb3 and Sb4 are described in addition to the samples Sz1, Sz2, Sb1 and Sb 2. In sample Sb3, the number Ns was 9. In sample Sb4, the number Ns was 18. The other structures of the samples Sb3 and Sb4 are the same as those of the samples Sb1 and Sb 2.

The horizontal axis of these figures is the number Ns of combinations including one magnetic layer 11 and one nonmagnetic layer 12. In these figures, the characteristics of the samples Sz1 and Sz2 are described at the positions where the number Ns is 1.

In fig. 5 (a) and 6 (a), the vertical axis represents the transmission characteristic T10. In fig. 5 (b) and 6 (b), the vertical axis represents the transmission characteristic T20. In fig. 5 (c) and 6 (c), the vertical axis represents the normalized transmission characteristic T11. In fig. 5 (d) and 6 (d), the vertical axis represents the normalized transmission characteristic T21. Generally, when the electromagnetic wave attenuator is thick, the transmission characteristic becomes large (the absolute value becomes large). The normalized transmission characteristic T11 is a value obtained by converting the value of the transmission characteristic T10 into a value of 1 μm in total thickness. The normalized transmission characteristic T21 is a value obtained by converting the value of the transmission characteristic T20 into a value of 1 μm in total thickness.

As is clear from fig. 5 (a) to 5 (d), when the frequency f is 2GHz, 200MHz, and 20MHz, the transmission characteristics T10 and T20 become lower as the number Ns becomes larger. When the number Ns is 3 or more, the transmission characteristics T10 and T20 become sharply low. In the embodiment, the number Ns is preferably 3 or more. The preferred amount Ns is 5 or more.

As is clear from fig. 6 (a) to 6 (d), when the frequency f is 2GHz, 200MHz, and 20MHz, the transmission characteristics T10 and T20 become lower as the number Ns becomes larger. For example, when the number Ns is 9 or more, the transmission characteristics T10 and T20 become sharply low. In the embodiment, the number Ns is preferably 9 or more. The preferable amount Ns is 18 or more.

In the embodiment, the nonmagnetic layer 12 provided between the plurality of magnetic layers 11 is thin. Therefore, it is considered that magnetostatic interaction occurs between the plurality of magnetic layers 11. By increasing the number Ns, the magnetostatic interaction can be effectively made large.

In the embodiment, the surfaces of the plurality of magnetic layers 11 may have irregularities. Hereinafter, an example of the unevenness will be described.

Fig. 7 is a schematic cross-sectional view illustrating an electromagnetic wave attenuator.

Fig. 7 schematically shows a cross section of the electromagnetic wave attenuator 10 sectioned by a plane including the Z-axis direction. As shown in fig. 7, the plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12 are alternately arranged along the Z-axis direction. For example, the nonmagnetic layer 12 is provided along the irregularities of the magnetic layer 11. For example, the magnetic layer 11 is provided along the irregularities of the nonmagnetic layer 12.

For example, one of the plurality of magnetic layers 11 includes the 1 st face 11 af. The 1 st face 11af opposes one of the plurality of nonmagnetic layers 12. The 1 st face 11af includes a1 st top 11pp and a1 st bottom 11 dp. The distance dz in the 1 st direction (Z axis direction) between the 1 st top portion 11pp and the 1 st bottom portion 11dp corresponds to the height (or depth) of the unevenness of the 1 st surface 11 af. In the embodiment, the distance dz is, for example, 10nm or more.

Since the 1 st surface 11af includes irregularities, for example, a plurality of convex portions or a plurality of concave portions are provided in one magnetic layer 11. The plurality of convex portions are arranged in a plane (for example, in an X-Y plane) intersecting the Z-axis direction. The magnetization 11pm of the plurality of convex portions causes an interaction. For example, since the non-magnetic portion exists in the plane intersecting the Z-axis direction, in the plurality of convex portions, the plurality of magnetizations 11pm at relatively long distances mutually generate magnetostatically coupled interaction with each other. The plurality of concave portions are arranged in a plane (e.g., in an X-Y plane) intersecting the Z-axis direction. The magnetization 11pm of the plurality of concave portions produces an interaction. For example, since the nonmagnetic portion exists in the plane intersecting the Z-axis direction, in the plurality of concave portions, the plurality of magnetizations 11pm at relatively long distances mutually generate magnetostatically coupled interaction with each other.

In the embodiment, the nonmagnetic layer 12 provided between the plurality of magnetic layers 11 is thin. Therefore, it is considered that the magnetostatic interaction between the plurality of convex portions arranged in the Z-axis direction is enhanced. It is considered that magnetostatic interaction between a plurality of concave portions arranged in the Z-axis direction is enhanced.

Thus, since the 1 st surface 11af has irregularities, in addition to the magnetostatic interaction generated between the plurality of magnetic layers 11, the magnetostatic interaction generated between the convex portions included in one magnetic layer 11 and the magnetostatic interaction generated between the concave portions included in one magnetic layer 11 are obtained. For example, the magnetostatic interaction is effectively generated in the direction along the Z-axis direction and the direction intersecting the Z-axis direction. This can effectively attenuate the incident electromagnetic wave 81.

As shown in fig. 7, one of the plurality of magnetic layers 11 includes a1 st face 11af opposite one of the plurality of nonmagnetic layers 12. The 1 st face 11af includes a1 st top 11pp, a2 nd top 11pq, and a1 st bottom 11 dp. One direction intersecting the 1 st direction (Z-axis direction) is defined as a2 nd direction De 2. The position of the 1 st bottom 11dp in the 2 nd direction De2 is located between the position of the 1 st top 11pp in the 2 nd direction De2 and the position of the 2 nd top 11pq in the 2 nd direction De 2. At least a portion of one of the plurality of nonmagnetic layers 12 is located between the 1 st top portion 11pp and the 2 nd top portion 11pq in the 2 nd direction De 2.

For example, magnetostatic interaction occurs in a portion including the 1 st top portion 11pp and a portion including the 2 nd top portion 11 pq. The incident electromagnetic wave 81 can be effectively attenuated.

In an embodiment, the distance dz is 0.2 times or more the 2 nd thickness t 2. Thus, the unevenness is maintained in the plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12. The distance dz is 0.2 times or more the 1 st thickness t 1. This maintains the unevenness in the magnetic layers 11 and the nonmagnetic layers 12. For example, if the nonmagnetic layer 12 or the magnetic layer 11 is excessively thick, the unevenness is easily flattened.

In the embodiment, the distance dz may be, for example, 10 μm or less.

Fig. 8 (a) to 8 (d) are schematic views illustrating an electromagnetic wave attenuator.

These figures illustrate a magnetic domain wall region 11W generated in the magnetic layer 11. As shown in fig. 8 (a), a region in which the magnetization in the magnetic layer 11 changes in the X-Y plane becomes a domain wall region 11W. As shown in fig. 8 (b), the magnetic domain wall region may not have an elongated region. As shown in fig. 8 (c), the magnetic domain wall region 11W may also take the form of a thin linear shape generated between a plurality of magnetic domains 11D. As shown in fig. 8 (d), most of the magnetic layer 11 may be domain wall regions 11W. The shapes of the domain wall regions 11W and the magnetic domains 11D shown in fig. 8 (a) to 8 (D) depend on, for example, the magnetic properties of the magnetic layers, the layered structure, defects, irregularities, and the like. Information on the magnetic domain wall regions 11W and the magnetic domains 11D is obtained by, for example, a polarization microscope or the like.

The domain wall region 11W may cause attenuation at a low frequency f as illustrated in fig. 2 (a), 2 (b), 3 (a), and 3 (b).

In an embodiment, at least one of the plurality of magnetic layers 11 may also include crystal grains. By providing the nonmagnetic layer 12 between the plurality of magnetic layers 11, the size of the crystal grains of the magnetic layers 11 can be reduced.

Fig. 9 is a schematic cross-sectional view illustrating an electromagnetic wave attenuator.

FIG. 9 schematically shows a cross-section along the X-Y plane of one of the plurality of magnetic layers 11. As shown in fig. 7, the magnetic layer 11 includes a plurality of crystal grains 11G. The average value of the sizes (diameter d11) of the plurality of crystal grains 11G is, for example, 40nm or less. Diameter d11 is the length in one direction along the X-Y plane. The average value of the diameter d11 may be, for example, the average value of the long side and the short side when the plurality of crystal grains 11G are each approximated by an ellipse. For example, in one example of calculating the average value, an average grain size obtained by a general grain size analysis method in a field of view including 10 or more crystal grains 11G on a cross section along the X-Y plane of one of the plurality of magnetic layers 11 can be used. Alternatively, the average value of the diameters d11 of the plurality of crystal grains 11G in the magnetic layer 11 can be obtained by a method using, for example, Scherrer's equation which is a general analytical method of X-ray diffraction.

In general, exchange coupling interactions cause the spin direction in ferromagnetic bodies to coincide. In the case where the magnetic body is a polycrystal, the exchange coupling interaction becomes small or zero at the grain boundary. Therefore, when an alternating magnetic field is applied to the polycrystalline magnetic body, spins precess substantially uniformly by one crystal grain 11G. Since the average value of the diameter d11 is as small as 40nm or less, the unit for performing this dynamic behavior becomes smaller, and for example, the magnetostatic interaction between layers, the magnetostatic interaction due to irregularities, or the magnetostatic interaction due to the formation of magnetic domain walls becomes stronger. This is considered to facilitate improvement of, for example, the attenuation characteristics of electromagnetic waves. In an embodiment, the average value of the diameter d11 may be 20nm, for example. Thereby, for example, the attenuation characteristics of electromagnetic waves can be more easily improved.

For example, in the case where the nonmagnetic layer 12 is a Ta layer having a thickness of 5nm and the magnetic layer 11 is a NiFeCuMo layer having a thickness of 100nm, the average value of the diameter d11 is about 30 nm. For example, in the case where the nonmagnetic layer 12 is a Ta layer having a thickness of 5nm and the magnetic layer 11 is a NiFeCuMo layer having a thickness of 50nm, the average value of the diameter d11 is about 20 nm. On the other hand, in the case where the nonmagnetic layer 12 is not provided and the magnetic layer 11 is a NiFeCuMo layer of 400nm, the average value of the diameter d11 is 47 nm.

In the embodiment, hysteresis can be observed in the magnetic layer 11.

Fig. 10 is a graph illustrating magnetic characteristics of the electromagnetic wave attenuator.

Fig. 10 illustrates magnetic characteristics observed in an electromagnetic wave attenuator. The horizontal axis of fig. 10 is the magnetic field ha (oe) applied to the electromagnetic wave attenuating body 10 in one direction along the X-Y plane as a whole. The vertical axis is the magnetization M1 (arbitrary units).

Fig. 10 shows characteristics in two cases where the vibration directions of the magnetic field of the incident electromagnetic wave 81 are different. As shown in fig. 1 (c), an angle between one direction (for example, X-axis direction) perpendicular to the Z-axis direction (incident direction) and the vibration direction 81a of the magnetic field component of the electromagnetic wave 81 is defined as an angle θ. Fig. 10 shows characteristics of the case where the angle θ of the vibration direction 81a of the magnetic field of the incident electromagnetic wave 81 is 0 degree and the case where the angle θ is 90 degrees.

As shown in fig. 10, a shoulder portion 10HS is observed in the 90-degree characteristic. The shoulder portion 10HS means that a part of another one of the plurality of magnetic layers 11 is magnetization-inverted by, for example, exchange coupling interaction and magnetostatic interaction from a portion (a part of one of the plurality of magnetic layers 11) having a coercive force of about 50 Oe. Alternatively, the shoulder portion 10HS means that one portion (magnetic domain 11D) in one of the plurality of magnetic layers 11 is magnetization-inverted.

For example, when the absolute value of the magnetic field Ha is 5Oe or less, the 90-degree characteristic and the 0-degree characteristic are well matched, and anisotropy is not observed in this region. On the other hand, if the absolute value of the magnetic field Ha exceeds 5Oe, the characteristic of 90 degrees is different from the characteristic of 0 degrees. Anisotropy is generated in this region. The presence of anisotropy in the appearance of the shoulder portion 10HS is considered to be due to the formation of different magnetic domains 11D in at least two of the plurality of magnetic layers 11.

The magnetic characteristics illustrated in fig. 10 are obtained by making the 1 st thickness t1 be 1/2 times or more of the 2 nd thickness t2, for example.

In the embodiment, the 1 st thickness t1 (see fig. 1 (a)) is, for example, 20nm or more. The 2 nd thickness t2 (see fig. 1 (a)) is, for example, 10nm or more. Such a thickness can reduce the magnitude of the demagnetizing field, for example, and the spin precession is likely to occur. Thus, for example, at least one of the above-described magnetostatic interaction between layers, magnetostatic interaction due to irregularities, and magnetostatic interaction due to formation of a magnetic domain wall is further enhanced. This can increase the attenuation characteristics of the electromagnetic wave 81. These thicknesses may be 50nm or more. These thicknesses may be, for example, 500nm or less. By making these thicknesses thin, manufacturing can be facilitated. By making these thicknesses thick, for example, magnetostatic interaction can be enhanced.

Fig. 11 (a) and 11 (b) are graphs illustrating characteristics of the electromagnetic wave attenuator.

These figures show the measurement results of the characteristics of the sample Sc1 in addition to the already described samples Sa1 and Sb 1. In sample Sc1, sample Sa1 (with 100nm NiFeCuMo layer and 100nm Cu layer as one pair, 10 pairs) and sample Sb1 (with 50nm NiFeCuMo layer and 5nm Ta layer as one pair, 37 pairs) were stacked. The characteristic Sx1 is also shown in fig. 11 (a) and 11 (b). The characteristic Sx1 is a transmittance characteristic obtained by calculation with respect to the structure in which the sample Sa1 and the sample Sb1 are laminated, based on the transmittance characteristic of the sample Sa1 and the transmittance characteristic of the sample Sb 1.

As is clear from fig. 11a and 11 b, the sample Sc1 has good attenuation characteristics (low transmission characteristics T10 and T20) compared with the sample Sa1 and the sample Sb1, respectively. Further, the transmission characteristic of the actual sample Sc1 was lower than that of the characteristic Sx1 derived by calculation. This is considered to be because the magnetostatic interaction acts between the portion corresponding to the sample Sa1 and the portion corresponding to the sample Sb1 in the sample Sc 1.

For example, with respect to the transmission characteristic T10 at about 50MHz, it is-17.6 dB in the sample Sa1, -7.4dB in the sample Sb1, -25.0dB in the sample Sc1, and-20.6 dB in the characteristic Sx 1.

For example, with respect to the transmission characteristic T10 at about 20MHz, it was-19.0 dB in the sample Sa1, -14.0dB in the sample Sb1, -27.0dB in the sample Sc1, and-23.8 dB in the characteristic Sx 1.

Fig. 12 is a schematic plan view illustrating the electromagnetic wave attenuator according to embodiment 1.

In fig. 12, the positions of the plurality of layers are depicted in a shifted manner for clarity of illustration. As shown in fig. 12, at least a part of each of the plurality of magnetic layers 11 has magnetization 11pm (easy magnetization axis). The orientation of the magnetization of at least a portion of one of the plurality of magnetic layers 11 may intersect the orientation of the magnetization of at least a portion of another one of the plurality of magnetic layers 11. This can effectively attenuate electromagnetic waves having various vibration planes.

For example, the plurality of magnetic layers 11 may be formed while applying a magnetic field. By changing the direction of the magnetic field applied in the formation of one of the plurality of magnetic layers 11 to the direction of the magnetic field applied in the formation of the other of the plurality of magnetic layers 11, the axes of easy magnetization in a plurality of directions can be obtained.

In the embodiment, the magnetization structure as exemplified in fig. 12 can be observed by a polarization microscope or the like, for example. For example, a hysteresis curve as shown in fig. 10 can be obtained by such a magnetization structure.

Fig. 13 is a schematic cross-sectional view illustrating an electromagnetic wave attenuator according to embodiment 1.

Fig. 13 illustrates one of the plurality of magnetic layers 11. As shown in fig. 13, at least one of the plurality of magnetic layers 11 may also include a plurality of magnetic films 11f and a plurality of nonmagnetic films 12 f. The plurality of magnetic films 11f and the plurality of nonmagnetic films 12f are alternately arranged along the 1 st direction (Z-axis direction). The plurality of nonmagnetic films 12f may be insulating or conductive, for example. For example, the orientation from one of the plurality of magnetic films 11f to another of the plurality of magnetic films 11f is along the 1 st direction. One of the plurality of nonmagnetic films 12f is located between one of the plurality of magnetic films 11f and another of the plurality of magnetic films 11 f. For example, the plurality of magnetic films 11f are aligned along the 1 st direction. For example, the plurality of nonmagnetic films 12f are arranged along the 1 st direction.

The 3 rd thickness t3 along the 1 st direction of one of the plurality of magnetic films 11f is thicker than the 4 th thickness t4 along the 1 st direction of one of the plurality of non-magnetic films 12 f. The 4 th thickness t4 is, for example, 0.5nm or more and 7nm or less.

The plurality of nonmagnetic films 12f function as, for example, a base layer. By forming one of the plurality of magnetic films 11f over one of the plurality of nonmagnetic films 12f, for example, good soft magnetic characteristics are obtained in the one of the plurality of magnetic films 11 f. For example, in the plurality of magnetic films 11f, appropriate magnetic domains 11D or appropriate domain wall regions 11W can be easily formed. For example, a high attenuation effect can be easily obtained at a low frequency f.

At least a part of at least one of the plurality of magnetic films 11f includes at least one selected from Co, Ni, and Fe. For example, one of the plurality of magnetic films 11f is a soft magnetic film.

At least a part of at least one of the plurality of nonmagnetic films 12f contains at least one selected from Cu, Ta, Ti, W, Mo, Nb, and Hf. At least one of the plurality of nonmagnetic films 12f is, for example, a Cu film.

At least a part of at least one of the plurality of magnetic layers 11 includes at least one selected from Co, Ni, and Fe. One of the plurality of magnetic layers 11 is, for example, a soft magnetic layer. At least a part of at least one of the plurality of magnetic layers 11 may further include at least one selected from Cu, Mo, and Cu.

At least a part of at least one of the plurality of magnetic layers 11 may also contain Fe_100-x1-x2α_x1N_x2α contains at least one selected from, for example, Zr, Hf, Ta, Nb, Ti, Si and Al.A composition ratio x1 is, for example, 0.5 atomic percent or more and 10 atomic percent or less.A composition ratio x2 is, for example, 0.5 atomic percent or more and 8 atomic percent or less.

At least a portion of at least one of the plurality of magnetic layers 11 may comprise, for example, NiFe, CoFe, FeSi, FeZrN, FeCo, or the like. At least a portion of at least one of the plurality of magnetic layers 11 may comprise an amorphous alloy, for example.

At least a part of at least one of the plurality of nonmagnetic layers 12 may include at least one selected from Cu, Al, Ni, Cr, Mn, Mo, Zr, and Si.

(embodiment 2)

Fig. 14 (a) to 14 (d) are schematic views illustrating an electronic device according to embodiment 2.

Fig. 14 (a) is a perspective view. FIG. 14 (b) is a sectional view taken along line A1-A2 of FIG. 14 (a). FIG. 14 (c) is a sectional view taken along line B1-B2 of FIG. 14 (a). Fig. 14 (d) is a plan view as viewed from arrow AA in fig. 14 (a). Fig. 1 (a) or fig. 1 (b) corresponds to the C1-C2 line section of fig. 14 (b).

As shown in fig. 14 (a), an electronic device 110 according to embodiment 2 includes an electronic element 50 and an electromagnetic wave attenuator 10. In this example, a substrate 60 is also provided. The electromagnetic wave attenuator 10 covers at least a part of the electronic component 50. The electronic element 50 is, for example, a semiconductor element.

As shown in fig. 14 (b), in this example, the electronic component 50 includes a semiconductor chip 50c, an insulating portion 50i, and a wiring 50 w. In this example, the electrode 50e, the substrate connection portion 50f, and the connection portion 58 are provided on the substrate 60. The wiring 50w electrically connects a part of the semiconductor chip 50c and the electrode 50 e. The electrode 50e and the connection portion 58 are electrically connected by the substrate connection portion 50 f. The substrate connection portion 50f penetrates the substrate 60. The connection portion 58 functions as an input/output portion of the semiconductor chip 50 c. The connection portion 58 may be a terminal, for example. An insulating portion 50i is provided around the semiconductor chip 50 c. The insulating portion 50i includes, for example, at least one of resin and ceramic. The semiconductor chip 50c is protected by an insulating portion 50 i.

The electronic component 50 includes at least one of an arithmetic circuit, a control circuit, a memory circuit, a switching circuit, a signal processing circuit, and a high-frequency circuit, for example.

The base 10s (see fig. 1 (a)) of the electromagnetic wave attenuator 10 may be, for example, an electronic component 50. The base 10s of the electromagnetic wave attenuator 10 may be, for example, an insulating portion 50 i.

As illustrated in fig. 14 (b), in this example, the electromagnetic wave attenuator 10 is electrically connected to the terminal 50t provided on the substrate 60. The electromagnetic wave attenuator 10 is set to a constant potential (for example, ground potential) via the terminal 50 t. The electromagnetic wave attenuator 10 attenuates, for example, an electromagnetic wave emitted from the electronic component 50. The electromagnetic wave attenuator 10 functions as a shield, for example.

As shown in fig. 14 (a) to 14 (c), the electromagnetic wave attenuator 10 includes a planar portion 10p and 1 st to 4 th side surface portions 10a to 10 d. The direction from the electronic element 50 to the planar portion 10p of the electromagnetic wave attenuator 10 is along the 1 st direction D1 (for example, the Z-axis direction).

As shown in fig. 14 (b) and 14 (c), the electronic component 50 is located between the planar portion 10p and the substrate 60 in the 1 st direction D1.

As shown in fig. 14 (c) and 14 (d), the electronic component 50 is located between the 1 st side surface portion 10a and the 3 rd side surface portion 10c in the X-axis direction.

As shown in fig. 14 (b) and 14 (d), the electronic component 50 is located between the 2 nd side surface portion 10b and the 4 th side surface portion 10d in the Y axis direction.

By using the electromagnetic wave attenuator 10 described in relation to embodiment 1, for example, electromagnetic waves in a low frequency range of 200MHz or less can be effectively attenuated. An electronic device capable of improving the attenuation characteristics of electromagnetic waves can be provided.

For example, the electromagnetic wave generated in the electronic element 50 can be suppressed from being emitted to the outside. It is possible to suppress electromagnetic waves from outside from reaching the electronic component 50. In the electronic component 50, stable operation can be easily obtained.

The planar portion 10p may be substantially quadrangular (including parallelogram, rectangle, or square), for example.

Fig. 15 (a) to 15 (d) are schematic cross-sectional views illustrating a part of the electronic device according to embodiment 2.

As shown in fig. 15 (a), the 1 st side surface portion 10a of the electromagnetic wave attenuator 10 includes a plurality of magnetic layers 11 and a plurality of nonmagnetic layers 12. The stacking direction of the plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12 in the 1 st side surface portion 10a is the 3 rd direction D3.

As shown in fig. 15 (b), the 2 nd side surface portion 10b of the electromagnetic wave attenuator 10 includes a plurality of magnetic layers 11 and a plurality of nonmagnetic layers 12. The stacking direction of the plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12 in the 2 nd side surface part 10b is the 2 nd direction D2.

As shown in fig. 15 (c), the 3 rd side surface portion 10c of the electromagnetic wave attenuator 10 includes a plurality of magnetic layers 11 and a plurality of nonmagnetic layers 12. The stacking direction of the plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12 in the 3 rd side surface portion 10c is the 3 rd direction D3.

As shown in fig. 15 (d), the 4 th side surface portion 10d of the electromagnetic wave attenuator 10 includes a plurality of magnetic layers 11 and a plurality of nonmagnetic layers 12. The stacking direction of the plurality of magnetic layers 11 and the plurality of nonmagnetic layers 12 in the 4 th side surface part 10D is the 2 nd direction D2.

The magnetic layer 11 included in each of the 1 st to 4 th side surface portions 10a to 10d may be continuous with the magnetic layer 11 included in the planar portion 10 p. The nonmagnetic layer 12 included in each of the 1 st to 4 th side surface portions 10a to 10d may be continuous with the nonmagnetic layer 12 included in the planar portion 10 p.

As described above, the electronic device 110 according to the embodiment includes the electromagnetic wave attenuator 10 according to embodiment 1 and the electronic component 50. For example, the direction from the electronic element 50 to the electromagnetic wave attenuator 10 is the 1 st direction (Z-axis direction).

For example, the electromagnetic wave attenuator 10 includes a plurality of regions (or a plurality of portions). At least a portion of the electronic component 50 is disposed between the plurality of regions. A plurality of electromagnetic wave attenuators 10 may be provided. The plurality of electromagnetic wave attenuators 10 correspond to, for example, the planar portion 10p and the 1 st to 4 th side surface portions 10a to 10 d. For example, at least a part of the electronic element 50 may be disposed between the plurality of electromagnetic wave attenuators 10.

Fig. 16 to 21 are schematic cross-sectional views illustrating an electronic device according to embodiment 2.

As shown in fig. 16, the electronic device 111 according to the embodiment includes the electromagnetic wave attenuator 10 and a plurality of electronic components (e.g., electronic components 51, 51B, 52, 53B, and 53C).

Electronic components are provided between a plurality of regions of the electromagnetic wave attenuator 10. An insulating region (insulating portions 41 and 42, etc.) may be provided between the electronic component and one of the regions of the electromagnetic wave attenuator 10. Resin portions (resin portions 51I, 52I, 53I, and the like) may be provided between the electronic component and the insulating regions (insulating portions 41, 42, and the like). A connection member (connection members 51N, 52N, 53N, and the like) may be provided in each of the plurality of electronic components. For example, the electronic component and the connection portion 58 may be electrically connected by a connection member.

As in the electronic device 112 shown in fig. 17, the connection member 51N may be embedded in the substrate 55.

As in the electronic device 113 shown in fig. 18, a mounting member 220 may be provided. The mounting member 220 includes a substrate 55 and the electromagnetic wave attenuator 10. Electronic components (electronic components 51 and 51B) are provided between the mounting member 220 and the other electromagnetic wave attenuating element 10.

As in the electronic device 114 shown in fig. 19, the electromagnetic wave attenuator 10 may be provided on a side surface of the electronic element 51. The side faces intersect the X-Y plane.

As in the electronic device 115 shown in fig. 20, the electromagnetic wave attenuator 10 may be provided so as to continuously surround a plurality of electronic elements (electronic elements 51 and 52).

As in the electronic device 116 shown in fig. 21, one of the plurality of electronic components (electronic component 51) is provided between the plurality of regions of the electromagnetic wave attenuator 10. The other of the plurality of electronic components (the electronic component 52) may not be provided between the plurality of regions of the electromagnetic wave attenuator 10.

The electronic devices 111 to 116 can also provide an electronic device capable of improving the attenuation characteristics of electromagnetic waves.