阅读说明：本技术 一种片式电阻器的制备方法及片式电阻器 (Chip resistor and preparation method thereof ) 是由 冯伟键 杨理强 林瑞芬 杨晓平 莫雪琼 于 2020-04-23 设计创作，主要内容包括：本发明公开了一种片式电阻器的制备方法及片式电阻器,该制备方法包括：将聚合纤维树脂膜的第一面与电阻体层的结合面进行膜层贴合；在所述电阻体层的形成面的中心区域形成保护层；所述形成面与所述结合面相背；及,在与所述中心区域错开的所述形成面上形成至少两个电极,以得到片式电阻器。由本发明制备方法制备的片式电阻器兼备更小型化和更低阻值的优点,满足快速发展的消费类电子、通讯行业等对优质片式电阻器(例如电流感测贴片电阻器)的需求。(The invention discloses a chip resistor and a preparation method thereof, wherein the preparation method comprises the following steps: laminating the first surface of the polymer fiber resin film with the bonding surface of the resistor layer; forming a protective layer in a central region of a surface on which the resistor layer is formed; the forming surface is opposite to the combining surface; and forming at least two electrodes on the forming surface staggered with the central area to obtain the chip resistor. The chip resistor prepared by the preparation method has the advantages of smaller size and lower resistance, and meets the requirements of rapidly developing consumer electronics, communication industries and the like on high-quality chip resistors (such as current sensing chip resistors).)

1. A method for manufacturing a chip resistor, comprising:

laminating the first surface of the polymer fiber resin film with the bonding surface of the resistor layer;

forming a protective layer in a central region of a surface on which the resistor layer is formed; the forming surface is opposite to the combining surface; and

at least two electrodes are formed on the formation face which is offset from the central region to obtain a chip resistor.

2. The method for manufacturing according to claim 1, wherein before the forming of at least two electrodes on the formation face displaced from the central region to obtain a chip resistor, the method further comprises:

according to the roller shaft attaching method, a photosensitive dry film is attached to the forming surface of the resistor layer, and the resistor layer attached with the photosensitive dry film is subjected to exposure, development and etching operation in sequence, so that the resistor layer is patterned.

3. The method for producing according to claim 1, wherein after the forming of at least two electrodes on the formation face displaced from the central region to obtain a chip resistor, the method further comprises:

and cutting the chip resistor by adopting a semiconductor precision cutting technology to obtain the single-grain chip resistor.

4. The production method according to claim 3,

before the chip resistor is cut by adopting a semiconductor precision cutting technology to obtain single-grain chip resistors, the method further comprises the following steps:

precisely trimming the resistance of the chip resistor in a preset resistance trimming mode;

after the chip resistor is cut by adopting a semiconductor precision cutting technology to obtain single-grain chip resistors, the method further comprises the following steps:

and sequentially plating a nickel layer and a tin layer on the surface of the electrode and the side surface of the resistor layer in a barrel plating mode.

5. The production method according to any one of claims 1 to 4,

the method for laminating the first surface of the polymer fiber resin film and the junction surface of the resistor layer by using the film layer comprises the following steps:

laminating the first surface of the polymer fiber resin film and the joint surface of the resistor layer through a first adhesive layer;

before the step of forming the protective layer in the central region of the formation face of the resistor layer, the method further includes:

the second surface of the polymer fiber resin film is subjected to film layer lamination with the inner surface of the heat conduction layer through a second bonding layer; the second face is opposite to the first face.

6. A chip resistor, comprising:

a polymeric fiber resin film comprising a first face;

the resistor layer comprises a bonding surface and a forming surface which are opposite, and the bonding surface is bonded with the first surface;

a protective layer disposed on a central region of the formation surface; and

at least two electrodes respectively provided on the formation surface staggered from the central region.

7. A chip resistor according to claim 6, further comprising a first adhesive layer disposed between the bonding surface and the first face.

8. The chip resistor according to claim 6, wherein the electrodes comprise copper electrodes, the chip resistor further comprises a nickel layer and a tin layer, and surfaces of the copper electrodes and sides of the resistor layer are plated with the nickel layer and the tin layer, respectively; the side surface of the resistor layer is connected with the bonding surface and the forming surface.

9. A chip resistor according to any one of claims 6 to 8, further comprising a heat conductive layer and a second adhesive layer, wherein said heat conductive layer comprises an inner surface, and said polymeric fiber resin film further comprises a second face opposite to said first face, said inner surface being provided on said second face by said second adhesive layer.

10. A chip resistor according to claim 9 wherein the thermally conductive layer further comprises an outer surface opposite the inner surface and thermally conductive side surfaces connecting the inner and outer surfaces, the protective layer further being disposed on the outer surface and the thermally conductive side surfaces.

Technical Field

The invention relates to the technical field of electronic components, in particular to a chip resistor and a preparation method thereof.

Background

In recent years, with the rapid development of the communication industry, the demand for chip resistors has been increasing. At present, the common chip type low-resistance resistors on the market comprise thick-film low-resistance resistors, alloy low-resistance resistors and pure-alloy low-resistance resistors. The thick-film low-resistance resistor is easy to process and realize a high-resistance section, but the TCR (temperature coefficient of resistance) is high, small in power and narrow in application range, and is not suitable for a high-precision circuit; the low resistance of the alloy, although lower TCR and higher power, is difficult to achieve miniaturization and lower resistance (1-3 m Ω); although the pure gold low-resistance resistor has the advantages of low TCR, high power and low resistance, miniaturization and thinning are difficult to realize.

Although the three types of low-resistance resistors have respective advantages, the realization of miniaturization and low-resistance values is difficult due to the restriction of self-structure and process conditions. Therefore, how to design a new chip resistor to achieve the effects of smaller size and lower resistance is a problem to be solved.

Disclosure of Invention

The invention provides a preparation method of a chip resistor and the chip resistor aiming at the problems in the prior art, and has the advantages of realizing the miniaturization of the chip resistor, the low resistance value and the like.

In order to achieve the purpose, the technical scheme provided by the invention is as follows:

a method for preparing a chip resistor comprises the following steps:

laminating the first surface of the polymer fiber resin film with the bonding surface of the resistor layer;

forming a protective layer in a central region of a surface on which the resistor layer is formed; the forming surface is opposite to the combining surface;

and forming at least two electrodes on the forming surface staggered with the central area to obtain the chip resistor.

In one embodiment, before the forming at least two electrodes on the forming surface staggered from the central region to obtain a chip resistor, the method further comprises:

according to the roller shaft attaching method, a photosensitive dry film is attached to the forming surface of the resistor layer, and the resistor layer attached with the photosensitive dry film is subjected to exposure, development and etching operation in sequence, so that the resistor layer is patterned.

In one embodiment, after the forming at least two electrodes on the forming surface staggered from the central region to obtain a chip resistor, the method further comprises:

and cutting the chip resistor by adopting a semiconductor precision cutting technology to obtain the single-grain chip resistor.

In one embodiment, before the chip resistor is diced by using a semiconductor precision dicing technology to obtain single-grain chip resistors, the method further includes:

precisely trimming the resistance of the chip resistor in a preset resistance trimming mode;

after the chip resistor is cut by adopting a semiconductor precision cutting technology to obtain single-grain chip resistors, the method further comprises the following steps:

and sequentially plating a nickel layer and a tin layer on the surface of the electrode and the side surface of the resistor layer in a barrel plating mode.

In one embodiment, the film lamination of the first surface of the polymer fiber resin film to the surface of the resistor layer includes:

laminating the first surface of the polymer fiber resin film layer and the joint surface of the resistor layer through a first adhesive layer;

before the step of forming the protective layer in the central region of the formation face of the resistor layer, the method further includes:

the second surface of the polymer fiber resin film is subjected to film layer lamination with the inner surface of the heat conduction layer through a second bonding layer; the second face is opposite to the first face.

The present invention also provides a chip resistor, including:

a polymeric fiber resin film comprising a first face;

the resistor layer comprises a bonding surface and a forming surface which are opposite, and the bonding surface is bonded with the first surface;

a protective layer disposed on a central region of the formation surface; and

at least two electrodes respectively provided on the formation surface staggered from the central region.

In one embodiment, the chip resistor further includes a first adhesive layer disposed between the bonding surface and the first surface.

In one embodiment, the electrode comprises a copper electrode, the chip resistor further comprises a nickel layer and a tin layer, and the surface of the copper electrode and the side surface of the resistor layer are plated with the nickel layer and the tin layer respectively; the side surface of the resistor layer is connected with the bonding surface and the forming surface.

In one embodiment, the chip resistor further includes a heat conductive layer and a second adhesive layer, the heat conductive layer includes an inner surface, and the polymeric fiber resin film further includes a second surface opposite to the first surface, the inner surface being disposed on the second surface through the second adhesive layer.

In one embodiment, the heat conduction layer further includes an outer surface opposite to the inner surface and a heat conduction side surface connecting the inner surface and the outer surface, and the protective layer is further disposed on the outer surface and the heat conduction side surface.

Compared with the prior art, the preparation method of the chip resistor provided by the embodiment of the invention has the advantages that through the thinning design, the thin polymer fiber resin film is used as the base material, the joint surface of the resistor layer is combined with the first surface of the polymer fiber resin film, and the traditional ceramic substrate with the thick thickness is replaced, so that the total thickness of the product is effectively reduced, and the chip resistor with the thinner thickness is realized. In addition, the thin polymer fiber resin film can be matched with a resistor layer with a thicker thickness, so that the chip resistor with lower resistance value is easy to realize. Therefore, the chip resistor prepared by the preparation method has the advantages of smaller size and lower resistance, and meets the requirements of rapidly developing consumer electronics, communication industries and the like on high-quality chip resistors (such as current sensing chip resistors).

Drawings

Fig. 1 is a schematic flow chart of a method for manufacturing a chip resistor according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of a chip resistor according to an embodiment of the present invention;

fig. 3 is a sectional view of a cut resistor dividing groove of a chip resistor according to an embodiment of the present invention;

fig. 4 is a cross-sectional view of a chip resistor according to an embodiment of the present invention;

fig. 5 is a cross-sectional view of a chip resistor according to an embodiment of the invention;

fig. 6 is a schematic structural diagram of a chip resistor including a thermal conductive layer according to an embodiment of the present invention.

Detailed Description

The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention. All other embodiments obtained by a person of ordinary skill in the art without any inventive step based on the embodiments of the present invention shall fall within the scope of protection of the present invention.

Referring to fig. 1 and fig. 2, a method for manufacturing a chip resistor according to an embodiment of the present invention includes:

s01: laminating the first surface 11 of the polymer fiber resin film 10 to the bonding surface 21 of the resistor layer 20;

s02: forming a protective layer 30 in a central region of the formation surface 22 of the resistor layer 20; the forming surface is opposite to the combining surface;

s03: at least two electrodes 40 are formed on the formation surface 22 deviated from the central region to obtain the chip resistor 100.

In the present embodiment, the polymeric fiber resin film 10 includes a glass fiber film or a polyimide film. Among them, since the glass fiber film has excellent high and low temperature resistance and electrical insulation, and is thinner than the ceramic substrate, it is suitable for use as a substrate of the chip resistor 100. The Polyimide Film, also called PI Film (Polyimide Film), has excellent high and low temperature resistance, electrical insulation, adhesion, radiation resistance, and dielectric resistance, is thinner than a ceramic substrate, and is also suitable as a substrate of the chip resistor 100. The thickness of the polymer fiber resin membrane is selected according to the actual design of the product, the thickness is generally only 0.05 mm-0.15 mm, and the thickness of the ceramic substrate is generally 0.2 mm-0.5 mm, so that the total thickness of the product can be reduced by at least 20% -30% by the novel structure under the condition that the thickness of the resistor layer 20 is the same.

The resistor layer 20 is also called an alloy resistor film. The resistor layer 20 has a bonding surface 21 and a formation surface 22 opposite to each other. The first surface 11 of the pre-cut sheet-shaped polymer fiber resin film 10 is tightly pressed with the bonding surface 21 of the alloy resistor film in a preset vacuum environment, then the central area of the forming surface 22 of the resistor layer 20 is printed or formed into a protective layer 30 in the same way, and finally the electrode 40 is formed on the forming surface 22 which is staggered with the central area in the way of rack plating and the like.

In summary, according to the method for manufacturing the chip resistor 100 of the embodiment of the invention, the thin polymer fiber resin film 10 is used as the base material through the thin design, and the bonding surface 21 of the resistor layer 20 is bonded to the first surface 11 of the polymer fiber resin film 10, so that the traditional ceramic substrate with a thick thickness is replaced, thereby effectively reducing the total thickness of the product and realizing the chip resistor 100 with a thinner thickness. In addition, the thin polymer resin film 10 can be used with the resistor layer 20 having a relatively large thickness, and thus the chip resistor 100 having a lower resistance can be easily implemented. Thus, the chip resistor 100 manufactured by the manufacturing method of the present invention has the advantages of smaller size and lower resistance, and meets the requirement of the rapidly developing consumer electronics, communication industry, etc. on the high-quality chip resistor 100 (such as a current sensing chip resistor).

In one embodiment, before step S03, that is, before forming at least two electrodes 40 on the forming surface 22 staggered from the central region to obtain the chip resistor 100, the method further includes:

s04: the photosensitive dry film is attached to the formation surface 22 of the resistor layer 20 by a roll attaching method, and the resistor layer 20 to which the photosensitive dry film is attached is sequentially subjected to exposure, development, and etching operations to pattern the resistor layer 20.

In one embodiment, after step S03, that is, after forming at least two electrodes 40 on the forming surface 22 staggered from the central region to obtain the chip resistor 100, the method further includes:

s05: the chip resistor 100 is diced by using a semiconductor precision dicing technique to obtain single-grain chip resistors 100.

In this embodiment, a semiconductor precision dicing technology (e.g., a wafer dicing technology) is adopted to sequentially dice the plurality of chip resistors 100 according to the dividing grooves X and the dividing grooves Y, so as to form a single-grain chip resistor 100 with regular appearance and high dimensional accuracy, thereby realizing microminiaturization. In addition, by adopting the semiconductor precision cutting technology and adopting the polymer fiber resin film 10 as the base material, the difficult cutting condition caused by adopting the ceramic substrate as the base material and the unfavorable conditions of easy deformation, easy fracture, easy corner breakage and the like of the product are avoided.

In one embodiment, before step S05, that is, before the chip resistor 100 is diced by using a semiconductor precision dicing technique to obtain the single-grain chip resistors 100, the manufacturing method further includes:

s06: the chip resistor 100 is precisely trimmed by a preset trimming method.

After step S05, the preparation method further includes:

s07: the surface of the electrode 40 and the side surface of the resistor layer 20 are sequentially plated with a nickel layer 60 and a tin layer 70 by barrel plating.

In one embodiment, step S01 of laminating the first surface 11 of the polymer fiber resin film 10 to the bonding surface 21 of the resistor layer 20 includes:

s08: the first surface 11 of the polymer fiber resin film 10 is film-bonded to the bonding surface 21 of the resistor layer 20 by the first adhesive layer 50.

Before step S03, that is, before the step of forming the protective layer 30 in the central region of the formation surface 22 of the resistor layer 20, the preparation method further includes:

s09: the second side 12 of the polymeric fiber resin film 10 is film-bonded to the inner surface 81 of the heat conductive layer by a second adhesive layer 90; the second face 12 is opposite to the first face 11.

In one embodiment, referring to FIG. 2, the following will describe the whole manufacturing process of the present invention in detail by taking the chip resistor 100 with a thickness of 0.40 + -0.10 mm to realize 0603-2 m Ω -1/2W as an example:

s011: the polymer fiber resin film 10 is bonded to the resistor layer 20 (i.e., the alloy resistor film). Specifically, under a predetermined vacuum environment, the pre-cut sheet-shaped polymer fiber resin film 10 and the resistor layer 20 (i.e., the alloy resistor film) are tightly pressed together by the first adhesive layer 50 through a laminator, and the two layers of films are cured at a set temperature, time and pressure at a low temperature, so as to achieve a good adhesive effect. Wherein the thickness of the polymeric fiber resin film 10 is preferably 0.10mm to 0.15 mm; the thickness of the alloy resistance film material is preferably 0.20 mm-0.25 mm; the low-temperature curing temperature is preferably 150 ℃ to 200 ℃.

S012: the resistor is patterned. Specifically, the photosensitive dry film is bonded to the formation surface 22 of the resistor layer 20 (i.e., the alloy resistor film) by a roll bonding method, and patterning of the resistor layer 20 is performed by exposure, development, and etching in this order.

S013: and (4) forming a copper electrode. Specifically, the protective layer 30 is formed by printing or the like in the middle region of the resistor layer 20, and copper electrodes are formed by rack plating or the like on the left and right ends of the resistor layer 20.

S014: and (6) precisely repairing the resistor. Specifically, the target resistance and the precision requirement of the product, such as 2m Ω, ± 1% precision, are achieved on the resistor layer 20 by mechanical trimming (as shown in fig. 4) or laser trimming (as shown in fig. 5).

S015: secondary covering of the protective layer 30. Specifically, the repairing opening is completely and compactly sealed by printing or the like.

S016: flag (resistance value code). Specifically, a mark (e.g., the mark layer 110 shown in fig. 2) capable of recognizing the resistance value is formed on the second surface 12 of the polymer fiber resin film 10 by printing, laser marking, code spraying, or the like.

S017: and (6) cutting into grains. Specifically, by using a semiconductor precision dicing technique (e.g., a wafer dicing technique), the sheet is diced into the dividing grooves X and Y (as shown in fig. 3) in sequence, thereby forming the single-grain chip resistor 100 having a regular shape and high dimensional accuracy.

S018: electroplated nickel layer 60-tin layer 70. Specifically, the surface of the copper electrode and the left and right side ends of the resistor layer 20 are sequentially plated with the dense nickel layer 60-tin layer 70 by barrel plating, so that the product has good welding characteristics.

In order to further improve the power characteristics of the product, the invention provides another embodiment, please refer to the schematic structural diagram of the chip resistor 100 shown in fig. 6, in which a heat conducting layer 80 is added on the basis of the above embodiment, specifically, a "heat sink" is attached, so as to improve the performance of the chip resistor 100:

s001: the same as S011 in the above embodiment.

S002: and (6) attaching the radiating fins. Specifically, a heat sink (such as a thin copper sheet, an aluminum sheet, etc.) is tightly pressed to the second side 12 of the polymer fiber resin film 10 by the second adhesive layer 90, and the two layers of film materials are cured at a set temperature, time, and pressure at a low temperature to achieve a good adhesive effect. The heat sink surface (e.g., the outer surface 82 and the sides 83 of the thermally conductive layer in fig. 6) is then coated with a dense protective layer 30.

S003-S009: in the above-described specific example, "S012-S018" in this order, the respective steps are the same.

Referring to fig. 2, the embodiment of the invention provides a chip resistor 100, which includes a polymer fiber resin film 10, a resistor layer 20, a protective layer 30 and at least two electrodes 40.

The polymeric fiber resin film 10 includes a first face 11. The resistor layer 20 includes opposite bonding surfaces 21 and forming surfaces 22, the bonding surfaces 21 being bonded to the first surface 11. The protective layer 30 is provided on the central region of the formation face 22. At least two electrodes 40 are respectively arranged on the forming surface 22 offset from the central region.

In this embodiment, the resistor layer 20 is also referred to as an alloy resistor film. The first surface 11 of the pre-cut sheet-shaped polymer fiber resin film 10 is tightly pressed with the bonding surface 21 of the alloy resistor film in a preset vacuum environment, then the central area of the forming surface 22 of the resistor layer 20 is printed or formed into a protective layer 30 in the same way, and finally the electrode 40 is formed on the forming surface 22 which is staggered with the central area in the way of rack plating and the like.

The thickness of the polymer fiber resin film 10 is selected according to the actual design of the product, and the thickness is generally only 0.05 mm-0.15 mm, while the thickness of the ceramic substrate is generally 0.2 mm-0.5 mm, so that the thickness of the whole product is reduced by at least 20% -30% by the novel structure under the condition that the thickness of the resistor layer 20 is the same.

In summary, the chip resistor 100 according to the embodiment of the present invention is designed to be thin, and the polymer fiber resin film 10 with a small thickness is used as a base material, and the resistor layer 20 is disposed on the polymer fiber resin film 10, so as to replace a conventional ceramic substrate with a large thickness, thereby effectively reducing the total thickness of the product and realizing the chip resistor 100 with a smaller thickness. In addition, the thin polymer resin film 10 can be used with the resistor layer 20 having a relatively large thickness, and thus the chip resistor 100 having a lower resistance can be easily implemented. Thus, the chip resistor 100 of the present invention has the advantages of smaller size and lower resistance, and meets the requirement of the rapidly developing consumer electronics, communication industry, etc. for a high-quality chip resistor 100 (e.g., a current sensing chip resistor).

In one embodiment, the protective layer 30 is glass or epoxy. In this way, the resistor layer 20 is protected from dust, electricity, and the like.

Referring to fig. 2, in one embodiment, the chip resistor 100 further includes a first adhesive layer 50, and the first adhesive layer 50 is disposed between the bonding surface 21 and the first surface 11.

Under a preset vacuum environment, the pre-cut sheet-shaped polymer fiber resin film 10 and the resistor layer 20 are tightly pressed together through the first adhesive layer 50 by a film pressing machine, and the two layers of film materials are cured at low temperature according to preset parameters such as temperature, time and pressure, so as to achieve a good adhesive effect. In this way, by providing the first adhesive layer 50 between the bonding surface 21 and the first surface 11, the bonding between the polymer fiber resin film 10 and the resistor layer 20 is more reliable.

In one embodiment, the polymer fiber resin Film 10 includes a glass fiber Film or a Polyimide Film (PI Film). The electrode 40 comprises a copper electrode.

Since the glass fiber film has excellent high and low temperature resistance and electrical insulation properties, and is thinner than the ceramic substrate, it is suitable for use as a substrate of the chip resistor 100. Since the PI film has excellent high and low temperature resistance, electrical insulation, adhesion, radiation resistance, and dielectric resistance, and is thinner than the ceramic substrate, it is also suitable as a substrate of the chip resistor 100. The copper electrode ensures good electrical connection of the chip resistor 100 with other components because copper has good electrical conductivity.

Referring to fig. 2, in one embodiment, at least two electrodes 40 are disposed at two ends of the resistor layer 20, respectively, and are symmetric about the protection layer 30.

At least two electrodes 40 are respectively located at both ends of the resistor layer 20 to facilitate electrical connection of the chip resistor 100 with other devices.

Referring to fig. 2, in one embodiment, the chip resistor 100 further includes a nickel layer 60 and a tin layer 70, and the surface of the copper electrode and the side 23 of the resistor layer 20 are plated with the nickel layer 60 and the tin layer 70, respectively. Side surface 23 of resistor layer 20 connects bonding surface 21 and forming surface 22.

By barrel plating, the surface of the copper electrode and the left and right sides of the resistor layer 20 are plated with a dense nickel layer 60 and a dense tin layer 70, respectively, so that the product has good welding characteristics.

Referring to fig. 3, in one embodiment, a semiconductor precision dicing technique (e.g., a wafer dicing technique) is employed to sequentially dice the plurality of chip resistors 100 in the above embodiment according to the dividing grooves X and the dividing grooves Y to form a single-grain chip resistor 100 with regular shape and high dimensional precision, so as to achieve microminiaturization. In addition, by adopting the semiconductor precision cutting technology and adopting the polymer fiber resin film 10 as the base material, the difficult cutting condition caused by adopting the ceramic substrate as the base material and the unfavorable conditions of easy deformation, easy fracture, easy corner breakage and the like of the product are avoided.

In one embodiment, the chip resistor 100 of the above embodiment is precisely trimmed.

Specifically, the target resistance and the precision requirement of the product, such as 2m Ω, ± 1% precision, are achieved on the resistor layer 20 by mechanical trimming (as shown in fig. 4) or laser trimming (as shown in fig. 5).

In one embodiment, the protective layer 30 also serves to completely and densely encapsulate the repaired mouth by printing or the like.

Referring to fig. 6, in one embodiment, the chip resistor 100 further includes a heat conductive layer 80 and a second adhesive layer 90. The thermally conductive layer 80 includes an inner surface 81, the polymeric fiber resin film 10 further includes a second side 12 opposite the first side 11, the inner surface 81 being disposed on the second side 12 by a second adhesive layer 90.

According to the high power requirement of the practical application, the heat dissipation of the chip resistor 100 during operation can be accelerated by pressing a heat conducting layer 80, such as a thin heat sink, on the substrate surface, so as to further increase the power level of the product.

In this embodiment, after the above-mentioned bonding of the polymer fiber resin film 10 and the resistor layer 20 is completed, the inner surface 81 of the heat conductive layer 80 and the second surface 12 of the polymer fiber resin film 10 are tightly pressed together by the second adhesive layer 90, and the two film materials are cured at a low temperature according to the preset parameters of temperature, time, pressure, etc. to achieve a good adhesive effect. In this manner, by disposing the second adhesive layer 90 between the inner surface 81 and the second side 12, the bonding between the heat conductive layer 80 and the polymeric fiber resin film 10 is more reliable.

In one embodiment, the thermally conductive layer 80 comprises a thin sheet of copper or aluminum. The thin copper sheet and the aluminum sheet both have good heat-conducting performance and can conduct heat to the resistor layer 20 relatively quickly.

Of course, in other embodiments, the heat conductive layer 80 may also be another device made of a material with excellent heat dissipation performance, and is not limited in particular herein.

Referring to fig. 6, in one embodiment, the heat conductive layer 80 further includes an outer surface 82 opposite to the inner surface 81 and a heat conductive side surface 83 connecting the inner surface 81 and the outer surface 82, and the protective layer 30 is further disposed on the outer surface 82 and the heat conductive side surface 83.

After the heat conductive layer 80 is attached, a dense protective layer 30 is coated on the outer surface 82 and the heat conductive side 83 of the heat conductive layer 80 to protect the heat conductive layer 80 from dust, electricity, and the like.

In one embodiment, the protective layer 30 is replaced by a solder mask layer.

Referring to fig. 6, in one embodiment, the chip resistor 100 further includes a mark layer 110, and the mark layer 110 is disposed on the protection layer 30.

In this embodiment, a mark capable of identifying the resistance value is formed on the outer surface of the protective layer 30 by printing, laser marking, code spraying, or the like.

In one embodiment, the product of the present invention is a miniaturized, thinned, and ultra-low resistance product designed to meet the requirements of consumer electronics, communication industry, etc., compared with the prior art, as shown in the following table:

as can be seen from the above comparison, compared with the prior art, the chip resistor 100 provided by the embodiment of the present invention has the following beneficial effects:

(1) thinner thicknesses can be achieved: the thin polymer fiber resin film 10 is used as a base material to replace the traditional ceramic substrate with a thicker thickness, and the total thickness of the product is reduced by about 20-30% under the condition that the thickness of the resistor layer 20 is the same.

(2) Further miniaturization can be achieved: the miniaturized ceramic substrate has the defects of easy breakage, deformation, double-sided sheet and the like due to the existence of segmentation, and the polymer fiber resin film 10 is used as a base material, is suitable for a mechanical slitting process, and greatly improves the dimensional accuracy of a product. As shown in the table above, the minimum size has enabled the model 0201 chip resistor 100.

(3) A lower resistance can be achieved: the thin polymer fiber resin film 10 can be used with a resistor layer 20 (alloy resistor film) having a large thickness, and a lower resistance can be easily achieved.

(4) The device has the advantages of miniaturization and high power: by attaching the heat conductive layer 80 having different thicknesses to the upper side of the polymer fiber resin film 10, higher power can be realized.

The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.