阅读说明：本技术 一种半导体功率芯片用金刚石单晶基片 (Diamond single crystal substrate for semiconductor power chip ) 是由 张新峰 黄国丰 龙安泽 王炜 曹磊 于 2020-04-16 设计创作，主要内容包括：本发明涉及半导体基片技术领域,且公开了一种半导体功率芯片用金刚石单晶基片,包括以下步骤：1)将半导体材料加热至4000摄氏度状态,得到熔融半导体基片。该一种半导体功率芯片用金刚石单晶基片,通过在P型披覆层植入磷,N型披覆层植入钡和锂,并通过N型欧姆电极连接和P型欧姆电极与金刚石薄片连接,形成具有金刚石单晶PIN二极体的基片,植入磷的P型披覆层与植入钡和锂的N型披覆层形成性能相当的可调式电子元件,并且通电产生的反应催生金刚石单晶,由于金刚石单晶这种材料具备超宽能隙,超过碳化硅与氮化镓,它的超宽能隙可防止在高温下产生热量,即使在非常高的温度和辐射强度下,金刚石单晶仍然保持透明,实现了具有极佳的散热性能,提高了使用寿命和传输效率。(The invention relates to the technical field of semiconductor substrates, and discloses a diamond single crystal substrate for a semiconductor power chip, which comprises the following steps: 1) the semiconductor material is heated to a temperature of 4000 degrees centigrade to obtain a molten semiconductor substrate. The diamond monocrystal substrate for the semiconductor power chip is characterized in that phosphorus is implanted into a P-type coating layer, barium and lithium are implanted into an N-type coating layer, the N-type coating layer is connected with a diamond sheet through an N-type ohmic electrode and a P-type ohmic electrode to form the substrate with the diamond monocrystal PIN diode, the P-type coating layer implanted with the phosphorus and the N-type coating layer implanted with the barium and the lithium form an adjustable electronic element with the same performance, and the diamond monocrystal is promoted by reaction generated by electrifying.)

1. A diamond single crystal substrate for a semiconductor power chip, comprising the steps of:

1) heating the semiconductor material to 4000 ℃ to obtain a molten semiconductor substrate;

2) forming an N-type cladding layer and a P-type cladding layer on the semiconductor substrate obtained in the step 1), and then adding a diamond sheet between the N-type cladding layer and the P-type cladding layer;

3) implanting phosphorus into the P-type coating layer in the step 2) and connecting the P-type coating layer with the P-type ohmic electrode corresponding to the electric property, and implanting barium and lithium into the N-type coating layer and connecting the N-type coating layer with the N-type ohmic electrode corresponding to the electric property;

4) and (3) respectively connecting the P-type ohmic electrode and the N-type ohmic electrode in the step 3) with corresponding electrodes on the diamond sheet by using leads, thus obtaining the diamond single crystal substrate.

2. The diamond single crystal substrate for a semiconductor power chip as set forth in claim 1, wherein the molten semiconductor material in the step 1) is purified by blowing an inert gas, the blowing temperature of the inert gas being higher than the melting point of the semiconductor material, the inert gas being blown for removing impurities on the semiconductor substrate, thereby improving the purity of the semiconductor substrate.

3. The diamond monocrystal substrate as claimed in claim 1, wherein the N-type coating layer, the P-type coating layer and the diamond sheet are sequentially formed in an upward direction as an N-type coating layer, a diamond sheet and a P-type coating layer.

4. The diamond monocrystal substrate for the semiconductor power chip as claimed in claim 1, wherein the thickness of the diamond sheet is five hundred nanometers, the semiconductor material is silicon dioxide, and the cooling manner is gradient cooling.

Technical Field

The invention relates to the technical field of semiconductor substrates, in particular to a diamond single crystal substrate for a semiconductor power chip.

Background

The semiconductor is a raw material for manufacturing a transistor, and can be widely used mainly because the resistivity of the semiconductor is not the size of the resistivity, but the resistivity of the semiconductor is obviously different with different conditions such as temperature, illumination, types and concentrations of impurities contained in the semiconductor, and the conductivity of the semiconductor generally has three remarkable characteristics that the resistivity of the semiconductor is obviously reduced with the temperature rise and has the characteristic of negative temperature coefficient, the resistivity of the semiconductor is changed with the illumination, the resistivity of the semiconductor is greatly related with the concentration of the trace impurities contained in the semiconductor, the diamond single crystal has the highest hardness in natural minerals and has quite high brittleness, and can still be cracked by being collided with by force, is originated from ancient Greek Adamant, means a hard and non-invasive substance and is a well-known jewel, the chemical component of the diamond single crystal is carbon, and the diamond single crystal only consists of a single element in the jewel, the diamond single crystal belongs to an isometric crystal system, and usually contains 0.05 to 0.2 percent of impurity elements, wherein the most important is N and B, the existence of the N and B is related to the type and the property of the diamond single crystal, the crystal forms are mostly octahedron, rhombic dodecahedron and tetrahedron, the pure diamond single crystal is colorless and transparent, different colors are presented due to the mixing of trace elements, the diamond has strong diamond luster, the refractive index is 2.417, the dispersion is medium and is 0.044, the homogeneous body has the thermal conductivity of 0.35 cal/centimeter/second/degree, the reaction is the most sensitive, the hardness is 10 by using a thermal conductivity meter, and the diamond single crystal is the hardest mineral known at present.

Semiconductor substrates made of semiconductor material are widely used in integrated circuits, for example in chinese patent CN 101894741B, which relates to a method of manufacturing a hybrid semiconductor substrate, which method comprises the steps of (a) providing a hybrid semiconductor substrate comprising a semiconductor-on-insulator (SeOI) region comprising an insulating layer above a base substrate and a SeOI layer above the insulating layer, and a bulk semiconductor region, wherein the SeOI region and the bulk semiconductor region share the same base substrate, (B) providing a mask layer above the SeOI region, and (c) forming a first impurity level by simultaneously doping the SeOI region and the bulk semiconductor region, such that the first impurity level in the SeOI region is contained in the mask, whereby the inclusion of more process steps in the method of manufacturing a hybrid semiconductor substrate can be avoided, however, the formed semiconductor substrate has a disadvantage of poor heat dissipation effect in the use process, and elements are melted seriously due to the influence of high power consumption and high heating temperature, so that a diamond single crystal substrate for a semiconductor power chip is provided to solve the problems.

Disclosure of Invention

Technical problem to be solved

Aiming at the defects of the prior art, the invention provides a diamond single crystal substrate for a semiconductor power chip, which has the advantages of excellent heat dissipation and the like, and solves the problems that the existing semiconductor substrate has poor heat dissipation effect in the using process and elements can be melted seriously due to the influence of high power consumption and high heating temperature.

(II) technical scheme

In order to achieve the purpose of excellent heat dissipation, the invention provides the following technical scheme: a diamond single crystal substrate for a semiconductor power chip, comprising the steps of:

1) heating the semiconductor material to 4000 ℃ to obtain a molten semiconductor substrate;

2) forming an N-type cladding layer and a P-type cladding layer on the semiconductor substrate obtained in the step 1), and then adding a diamond sheet between the N-type cladding layer and the P-type cladding layer;

3) implanting phosphorus into the P-type coating layer in the step 2) and connecting the P-type coating layer with the P-type ohmic electrode corresponding to the electric property, and implanting barium and lithium into the N-type coating layer and connecting the N-type coating layer with the N-type ohmic electrode corresponding to the electric property;

4) and (3) respectively connecting the P-type ohmic electrode and the N-type ohmic electrode in the step 3) with corresponding electrodes on the diamond sheet by using leads, thus obtaining the diamond single crystal substrate.

Preferably, the molten semiconductor material in step 1) needs to be purified by blowing inert gas, the blowing temperature of the inert gas is higher than the melting point of the semiconductor material, and the inert gas is used for removing impurities on the semiconductor substrate, so that the purity of the semiconductor substrate is improved.

Preferably, the N-type coating layer, the P-type coating layer and the diamond sheet are sequentially and upwards the N-type coating layer, the diamond sheet and the P-type coating layer.

Preferably, the thickness of the diamond sheet is five hundred nanometers, the semiconductor material is silicon dioxide, and the cooling mode is gradient cooling.

(III) advantageous effects

Compared with the prior art, the invention provides a diamond single crystal substrate for a semiconductor power chip, which has the following beneficial effects:

the diamond single crystal substrate for the semiconductor power chip is characterized in that phosphorus is implanted into a P-type coating layer, barium and lithium are implanted into an N-type coating layer, the N-type coating layer is connected with a diamond sheet through an N-type ohmic electrode and a P-type ohmic electrode, a substrate with a diamond single crystal PIN diode is formed, the P-type coating layer implanted with the phosphorus and the N-type coating layer implanted with the barium and the lithium form an adjustable electronic element with the same performance, reaction generated by electrification accelerates generation of a diamond single crystal, the diamond is an insulator in general, the atomic number of carbon C is small, the constraint effect on valence electrons is very strong, the valence electrons cannot get rid of the constraint of valence bonds in general conditions, the forbidden band is very large, carriers cannot be generated at room temperature, and therefore the diamond is not conductive, but the P-type coating layer implanted with the phosphorus and the N-type coating layer implanted with the barium and the lithium enable the diamond to present the characteristics of a semiconductor after the P-type coating layer, the diamond monocrystal material has an ultra-wide energy gap which exceeds that of silicon carbide and gallium nitride, the ultra-wide energy gap can prevent heat generation at high temperature, the diamond monocrystal still keeps transparent even at very high temperature and radiation intensity, the diamond monocrystal has the ultra-low resistance characteristic, heat cannot be generated after power-on, a substrate of a diamond monocrystal PIN diode has no hot spot, parasitic loss cannot occur, the heat conduction performance is excellent, the heat conduction performance of the diamond monocrystal is twenty-two times that of silicon and five times that of copper, the excellent heat dissipation performance is realized, the service life is prolonged, and the transmission efficiency is improved.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

A diamond single crystal substrate for a semiconductor power chip, comprising the steps of:

1) heating a semiconductor material to 4000 ℃ to obtain a molten semiconductor substrate, wherein the semiconductor material is silicon dioxide, the silicon dioxide is used for manufacturing plate glass, glass products, casting sand, glass fiber, ceramic colored glaze, rust-proof sand blasting, filtering sand, flux, refractory materials and lightweight bubble concrete, the silicon dioxide has wide application range, rare crystal in the nature can be used for manufacturing important parts, optical instruments and artware in the electronic industry, the silicon dioxide is an important raw material for manufacturing optical fibers, and generally pure quartz can be used for manufacturing quartz glass, and the expansion coefficient of the quartz glass is very small;

2) forming an N-type coating layer and a P-type coating layer on the semiconductor substrate obtained in the step 1), and then adding a diamond sheet between the N-type coating layer and the P-type coating layer, wherein the N-type coating layer, the P-type coating layer and the diamond sheet are sequentially and upwards provided with the N-type coating layer, the diamond sheet and the P-type coating layer, and the thickness of the diamond sheet is five hundred nanometers;

3) implanting phosphorus into the P-type coating layer in the step 2) and connecting the P-type coating layer with the P-type ohmic electrode corresponding to the electric property, and implanting barium and lithium into the N-type coating layer and connecting the N-type coating layer with the N-type ohmic electrode corresponding to the electric property;

4) the transparent semiconductor device has the advantages that the transparent semiconductor device can be obtained by connecting the P-type ohmic electrode and the N-type ohmic electrode in step 3) with the corresponding electrodes on the diamond wafer by wires, the P-type cladding layer is implanted with phosphorus, the N-type cladding layer is implanted with barium and lithium, the P-type ohmic electrode is connected with the diamond wafer by the N-type ohmic electrode and the P-type ohmic electrode, the substrate with the diamond single crystal PIN diode is formed by the transparent semiconductor device, the P-type cladding layer implanted with phosphorus and the N-type cladding layer implanted with barium and lithium, the tunable electronic element has a relatively high performance, and the diamond single crystal is generated by energizing, the material of the diamond single crystal has an ultra-wide band gap, which exceeds silicon carbide and gallium nitride, the ultra-wide band gap thereof can prevent heat generation at high temperatures, for crystals including semiconductors, the electrons therein are neither identical to the free electrons in the real space nor to the electrons in the isolated electrons in the ATR, the free electrons in the real space, i.e. the crystal can be taken at any size, and the electrons in the so-called discrete state, the so-called discrete energy level, the so-called discrete band-called band gap band-called band gap band-band gap band-band is the band-gap band, the infrared-gap band.

The invention has the beneficial effects that: the P-type coating layer is implanted with phosphorus, the N-type coating layer is implanted with barium and lithium, the P-type coating layer implanted with phosphorus and the N-type coating layer implanted with barium and lithium form an adjustable electronic element with equivalent performance, and the reaction generated by electrifying accelerates the generation of diamond single crystal, diamond is an insulator in general, because the atomic number of carbon C is small, the constraint effect on valence electrons is very strong, the valence electrons can not get rid of the constraint of valence bonds in general conditions, the forbidden bandwidth is very large, and current carriers can not be generated at room temperature, but the P-type coating layer implanted with phosphorus and the N-type coating layer implanted with barium and lithium are electrified to enable the diamond to present the characteristics of a semiconductor, and the material of the diamond single crystal has ultra-wide energy gap, the ultra-wide energy gap of the diamond single crystal can prevent heat generation at high temperature, even under very high temperature and radiation intensity, the diamond single crystal still keeps transparent, and the diamond single crystal has ultra-low resistance characteristic, and can not generate heat after being electrified, so that the substrate of the PIN diode of the diamond single crystal has no hot spot, parasitic loss can not occur, and the heat conduction performance is excellent, the heat conduction performance of the diamond single crystal is twenty two times that of silicon and five times that of copper, thereby realizing excellent heat dissipation performance, prolonging the service life and improving the transmission efficiency, and solving the defect that the existing semiconductor substrate has poor heat dissipation effect in the use process, and the element can be melted seriously due to the influence of high power consumption and high heating temperature.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.