阅读说明：本技术 一种c，x波段双频紧凑型高功率微波器件 (C, X wave band double-frequency compact high-power microwave device ) 是由 丁恩燕 张运俭 康强 向飞 金晖 谭杰 胡进光 王冬 杨周炳 陆巍 张北镇 安 于 2020-04-02 设计创作，主要内容包括：本发明公开了一种C,X波段双频紧凑型高功率微波器件,包括依次设置包含同轴内导体的非周期性C波段慢波结构和X波段慢波结构,所述C波段慢波结构轴向总长度与C波段辐射波长的比值为1.6,X波段慢波结构轴向总长度与X波段辐射波长的比值为1.97,所述微波器件的内直径为76mm；电压380kV,电流6kA,内直径为60mm,外直径为70mm的环形电子束在0.63T的轴向磁场引导下在微波器件内传输,辐射产生4GHz及8GHz的双频高功率微波。采用本发明的一种C,X波段双频紧凑型高功率微波器件,能够同时辐射产生4GHz及8GHz的双频高功率微波。(The invention discloses a C and X waveband double-frequency compact high-power microwave device, which comprises a non-periodic C waveband slow wave structure and an X waveband slow wave structure, wherein the non-periodic C waveband slow wave structure and the X waveband slow wave structure are sequentially arranged, the ratio of the axial total length of the C waveband slow wave structure to the radiation wavelength of the C waveband is 1.6, the ratio of the axial total length of the X waveband slow wave structure to the radiation wavelength of the X waveband is 1.97, and the inner diameter of the microwave device is 76 mm; the voltage is 380kV, the current is 6kA, the inner diameter is 60mm, the annular electron beam with the outer diameter of 70mm is transmitted in the microwave device under the guidance of the axial magnetic field of 0.63T, and dual-frequency high-power microwaves of 4GHz and 8GHz are generated by radiation. The C and X waveband double-frequency compact high-power microwave device can radiate and generate double-frequency high-power microwaves of 4GHz and 8GHz simultaneously.)

1. A compact high power microwave device of C, X wave band dual-frenquency which characterized in that: the microwave device comprises a non-periodic C-band slow-wave structure and an X-band slow-wave structure which are sequentially arranged, wherein the non-periodic C-band slow-wave structure and the X-band slow-wave structure comprise coaxial inner conductors, the ratio of the axial total length of the C-band slow-wave structure to the radiation wavelength of a C band is 1.6, the ratio of the axial total length of the X-band slow-wave structure to the radiation wavelength of an X band is 1.97, and the inner diameter of the microwave device;

the voltage is 380kV, the current is 6kA, the inner diameter is 60mm, the annular electron beam with the outer diameter of 70mm is transmitted in the microwave device under the guidance of the axial magnetic field of 0.63T, and dual-frequency high-power microwaves of 4GHz and 8GHz are generated by radiation.

2. The C, X band dual frequency compact high power microwave device of claim 1, wherein: the C-band slow-wave structure comprises a first annular cavity, a second annular cavity, a third annular cavity and a fourth annular cavity, the outer diameter of the first cavity is 120mm, and the axial length of the first cavity is 15 mm; the outer diameter of the second cavity is 100mm, and the axial length is 15 mm; the outer diameter of the third cavity is 110mm, and the axial length is 15 mm; the outer diameter of the fourth cavity is 110mm, and the axial length is 15 mm; the interval between the first cavity and the second cavity is 15 mm; the second cavity and the third cavity are separated by 35 mm; the interval between the third cavity and the fourth cavity is 10 mm.

3. The C, X band dual frequency compact high power microwave device of claim 1, wherein: the diameter of the inner conductor of the C-waveband slow-wave structure is 30 mm.

4. The C, X band dual frequency compact high power microwave device of claim 1, wherein: the X-waveband slow-wave structure comprises a fifth cavity, a sixth cavity, a seventh cavity, an eighth cavity, a ninth cavity and a tenth cavity, wherein the outer diameter of the fifth cavity is 100mm, and the axial length of the fifth cavity is 7 mm; the outer diameter of the sixth cavity is 84mm, and the axial length is 8 mm; the outer diameter of the seventh cavity is 88mm, and the axial length of the seventh cavity is 6 mm; the external diameter of the eighth cavity is 84mm, and the axial length of the eighth cavity is 6 mm; the outer diameter of the ninth cavity is 80mm, and the axial length of the ninth cavity is 6 mm; the outer diameter of the tenth cavity is 88mm, and the axial length of the tenth cavity is 6 mm; the interval between the fifth cavity and the sixth cavity is 5 mm; the interval between the sixth cavity and the seventh cavity is 11 mm; the interval between the seventh cavity and the eighth cavity is 6 mm; the interval between the eighth cavity and the ninth cavity is 6 mm; the interval between the ninth cavity and the tenth cavity is 7 mm.

5. The C, X band dual frequency compact high power microwave device of claim 1, wherein: the diameter of the inner conductor of the X-waveband slow-wave structure is 40 mm.

6. The C, X band dual frequency compact high power microwave device of claim 2 or 4, characterized by: the cross section of the cavity is rectangular.

7. The C, X band dual frequency compact high power microwave device of claim 1, wherein: the microwave device comprises a circular waveguide outer cylinder, an inner conductor which is arranged in the circular waveguide outer cylinder and is coaxial with the circular waveguide outer cylinder, a vacuum electron beam transmission channel is formed between the inner conductor and the circular waveguide outer cylinder, and an annular electron beam is transmitted in the electron beam transmission channel.

8. The C, X band dual frequency compact high power microwave device of claim 1, wherein: the interior of the microwave device is in a vacuum state of millipascal magnitude.

9. The C, X band dual frequency compact high power microwave device of claim 1, wherein: the circular waveguide outer cylinder is made of nonmagnetic stainless steel.

Technical Field

The invention relates to a C and X waveband double-frequency compact high-power microwave device, and belongs to the technical field of high-power microwave devices.

Background

The high-power microwave generally refers to electromagnetic waves with peak power of more than 100MW and working frequency of 1-300 GHz. With the development of high-power microwave research, higher and higher requirements are put on the overall system efficiency of a high-power microwave source.

The axial O-shaped high-power microwave device is a high-power microwave device with wider application due to the easy guidance of electron beams and the changeable combination of the structure. At present, a longer slow wave structure is generally needed for the radiation generation of an axial O-shaped high-power microwave device to achieve the synchronization of the phase velocity of an electron beam and the microwave. In the existing high-power microwave source, the high-impedance device has high beam conversion efficiency, but generally needs a strong guiding magnetic field, and particularly needs a bulky and high-energy-consumption solenoid magnet system when the microwave source operates in a repeated frequency state. If the axial size of the device is shortened as much as possible, the volume and the weight of the magnet system can be reduced by several times, and the energy requirement of a magnetic field on a power supply can be greatly reduced. Therefore, how to design a compact high-power microwave source is one of the pursued targets.

In recent years, high-power microwave sources have been developed to achieve high power, high efficiency, long pulse and high repetition frequency operation, and other development features, such as the requirement that a single microwave source device generates microwaves with multiple frequencies. The device can realize multi-frequency output of a single oscillator, is an extensive research and integrated innovative application of a single-frequency oscillator, and has a certain application prospect.

Disclosure of Invention

The invention aims to: aiming at the problems, the invention provides a C and X waveband double-frequency compact high-power microwave device which can radiate and generate double-frequency high-power microwaves of 4GHz and 8GHz simultaneously.

The technical scheme adopted by the invention is as follows:

a C-band and X-band dual-frequency compact high-power microwave device comprises a non-periodic C-band slow-wave structure and an X-band slow-wave structure which are sequentially arranged, wherein the ratio of the axial total length of the C-band slow-wave structure to the radiation wavelength of the C-band is 1.6, the ratio of the axial total length of the X-band slow-wave structure to the radiation wavelength of the X-band is 1.97, and the inner diameter of the microwave device is 76 mm;

the voltage is 380kV, the current is 6kA, the inner diameter is 60mm, the annular electron beam with the outer diameter of 70mm is transmitted in the microwave device under the guidance of the axial magnetic field of 0.63T, and dual-frequency high-power microwaves of 4GHz and 8GHz are generated by radiation.

In the invention, two ends of the circular waveguide outer cylinder are closed, the interior of the circular waveguide outer cylinder is vacuumized to millipascal level, and one end in the circular waveguide outer cylinder is provided with a cathode for emitting annular electron beams.

Preferably, the C-band slow-wave structure comprises a first annular cavity, a second annular cavity, a third annular cavity and a fourth annular cavity, the outer diameter of the first cavity is 120mm, and the axial length of the first cavity is 15 mm; the outer diameter of the second cavity is 100mm, and the axial length is 15 mm; the outer diameter of the third cavity is 110mm, and the axial length is 15 mm; the outer diameter of the fourth cavity is 110mm, and the axial length is 15 mm; the interval between the first cavity and the second cavity is 15 mm; the second cavity and the third cavity are separated by 35 mm; the interval between the third cavity and the fourth cavity is 10 mm.

Preferably, the diameter of the inner conductor of the C-band slow-wave structure is 30 mm.

Preferably, the X-band slow-wave structure comprises a fifth cavity, a sixth cavity, a seventh cavity, an eighth cavity, a ninth cavity and a tenth cavity, wherein the outer diameter of the fifth cavity is 100mm, and the axial length of the fifth cavity is 7 mm; the outer diameter of the sixth cavity is 84mm, and the axial length is 8 mm; the outer diameter of the seventh cavity is 88mm, and the axial length of the seventh cavity is 6 mm; the external diameter of the eighth cavity is 84mm, and the axial length of the eighth cavity is 6 mm; the outer diameter of the ninth cavity is 80mm, and the axial length of the ninth cavity is 6 mm; the outer diameter of the tenth cavity is 88mm, and the axial length of the tenth cavity is 6 mm; the interval between the fifth cavity and the sixth cavity is 5 mm; the interval between the sixth cavity and the seventh cavity is 11 mm; the interval between the seventh cavity and the eighth cavity is 6 mm; the interval between the eighth cavity and the ninth cavity is 6 mm; the interval between the ninth cavity and the tenth cavity is 7 mm.

Preferably, the diameter of the inner conductor of the X-band slow-wave structure is 40 mm.

Preferably, the cross section of the cavity is rectangular.

Preferably, the microwave device comprises a circular waveguide outer cylinder, an inner conductor which is arranged in the circular waveguide outer cylinder and is coaxial with the circular waveguide outer cylinder, a vacuum electron beam transmission channel is formed between the inner conductor and the circular waveguide outer cylinder, and a ring-shaped electron beam is transmitted in the electron beam transmission channel.

Preferably, the interior of the microwave device is in a vacuum state of millipascal magnitude.

Preferably, the circular waveguide outer cylinder is made of nonmagnetic stainless steel.

The C and X waveband double-frequency compact high-power microwave device adopts a sectional aperiodic slow wave structure design method, has the advantages of simple structure and very compact axial and radial dimensions, has the advantages of extremely simple structural dimension, miniaturization and light weight compared with a device in the same frequency band, and can greatly reduce the energy requirement of a magnetic field on a power supply.

In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:

1. the volume and the weight of the high-power microwave source system are greatly reduced;

2. the energy requirement of the magnetic field on the power supply can be greatly reduced;

3. can radiate and generate C, X wave band double-frequency high-power microwave devices at the same time.

Drawings

The invention will now be described, by way of example, with reference to the accompanying drawings, in which:

fig. 1 is a schematic structural diagram of a C, X band dual-frequency compact high-power microwave device.

The labels in the figure are: the device comprises a 1-circular waveguide outer cylinder, a 2-inner conductor, a 3-electron beam transmission channel, a 4-annular electron beam, a 5-C waveband slow wave structure, a 6-X waveband slow wave structure, a 51-first cavity, a 52-second cavity, a 53-third cavity, a 54-fourth cavity, a 61-fifth cavity, a 62-sixth cavity, a 63-seventh cavity, a 64-eighth cavity, a 65-ninth cavity and a 66-tenth cavity.

Detailed Description

All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.

Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.