Plasma sensing device, plasma monitoring system and plasma process control method
阅读说明:本技术 等离子体感测装置、等离子体监测系统和等离子体工艺控制方法 (Plasma sensing device, plasma monitoring system and plasma process control method ) 是由 朴宪勇 裴祥佑 李瑟琪 朱愿暾 于 2019-06-26 设计创作,主要内容包括:一种等离子体监测系统包括执行等离子体工艺的等离子体室、第一等离子体感测装置和第二等离子体感测装置以及控制器。第一等离子体感测装置和第二等离子体感测装置分别位于相对于等离子体室中的监测等离子体平面的中心点彼此垂直的第一水平方向和第二水平方向上。第一等离子体感测装置和第二等离子体感测装置基于在第一水平方向上从监测等离子体平面照射的第一入射光束和在第二水平方向上从监测等离子体平面照射的第二入射光束,产生关于监测等离子体平面的第一检测信号和第二检测信号。控制器通过基于第一检测信号和第二检测信号执行卷积运算来检测关于监测等离子体平面的二维等离子体分布信息,并基于二维等离子体分布信息控制等离子体工艺。(A plasma monitoring system includes a plasma chamber that performs a plasma process, first and second plasma sensing devices, and a controller. The first and second plasma sensing devices are respectively located in first and second horizontal directions perpendicular to each other with respect to a center point of a monitored plasma plane in the plasma chamber. The first and second plasma sensing devices generate first and second detection signals with respect to the monitoring plasma plane based on a first incident light beam irradiated from the monitoring plasma plane in a first horizontal direction and a second incident light beam irradiated from the monitoring plasma plane in a second horizontal direction. The controller detects two-dimensional plasma distribution information about a monitored plasma plane by performing a convolution operation based on the first detection signal and the second detection signal, and controls the plasma process based on the two-dimensional plasma distribution information.)
1. A plasma monitoring system, comprising:
a plasma chamber for performing a plasma process;
a first plasma sensing device located in a first horizontal direction from a center point of a monitoring plasma plane in the plasma chamber, the first plasma sensing device generating a first detection signal with respect to the monitoring plasma plane based on a first incident light beam irradiated from the monitoring plasma plane in the first horizontal direction;
a second plasma sensing device located in a second horizontal direction from the center point of the monitoring plasma plane, the second plasma sensing device generating a second detection signal with respect to the monitoring plasma plane based on a second incident light beam irradiated from the monitoring plasma plane in the second horizontal direction, wherein the second horizontal direction is perpendicular to the first horizontal direction; and
a controller that detects two-dimensional plasma distribution information about the monitored plasma plane by performing a convolution operation based on the first detection signal and the second detection signal, and controls the plasma process based on the two-dimensional plasma distribution information.
2. The plasma monitoring system of claim 1 wherein the first detection signal represents a one-dimensional plasma distribution in the second horizontal direction of the monitored plasma plane and the second detection signal represents a one-dimensional plasma distribution in the first horizontal direction of the monitored plasma plane.
3. The plasma monitoring system of claim 1, wherein each of the first detection signal and the second detection signal comprises:
intensity data representing a one-dimensional overall intensity distribution as a function of position on the monitored plasma plane in each of the first and second horizontal directions; and
spectral data representing a one-dimensional per-wavelength intensity distribution as a function of the location on the monitored plasma plane in each of the first and second horizontal directions.
4. The plasma monitoring system of claim 1, wherein each of the first plasma sensing device and the second plasma sensing device comprises:
a beam receiver that filters each of the first incident beam and the second incident beam to generate a line beam corresponding to the monitored plasma plane;
a splitter that splits the line beam to produce two split line beams;
a one-dimensional detector that generates intensity data based on one of the two split line beams, the intensity data representing a one-dimensional overall intensity distribution as a function of position on the monitored plasma plane in each of the first and second horizontal directions;
a diffraction grating that splits the other of the two split line beams to produce a diffracted beam per wavelength; and
an image sensor that generates spectral data based on the per-wavelength diffracted beam, the spectral data representing a one-dimensional per-wavelength intensity distribution as a function of the location on the monitored plasma plane in each of the first and second horizontal directions.
5. The plasma monitoring system of claim 1, wherein:
the first detection signal comprises first intensity data representing a one-dimensional overall intensity distribution as a function of position on the monitored plasma plane in the second horizontal direction,
the second detection signal includes second intensity data representing a one-dimensional overall intensity distribution according to a position on the monitored plasma plane in the first horizontal direction, and
the controller generates a two-dimensional bulk intensity distribution of bulk gas species in the monitored plasma plane as the two-dimensional plasma distribution information by performing a convolution operation based on the first intensity data and the second intensity data.
6. The plasma monitoring system of claim 1, wherein:
the first detection signal comprises first spectral data representing a one-dimensional per-wavelength intensity distribution as a function of position on the monitored plasma plane in the second horizontal direction,
the second detection signal includes second spectral data representing a one-dimensional per-wavelength intensity distribution according to a position on the monitored plasma plane in the first horizontal direction, and
the controller generates a two-dimensional per-wavelength intensity distribution of each gas species in the monitored plasma plane as the two-dimensional plasma distribution information by performing a convolution operation based on the first spectral data and the second spectral data.
7. The plasma monitoring system of claim 1, wherein the first plasma sensing device comprises:
a first beam receiver that filters the first incident beam to generate a first line beam corresponding to the monitored plasma plane;
a first splitter that splits the first line beam to produce a first split line beam and a second split line beam;
a first one-dimensional detector that generates first intensity data based on the first split line beam, the first intensity data representing a one-dimensional overall intensity distribution as a function of position on the monitored plasma plane in the second horizontal direction; and
a first two-dimensional detector that generates first spectral data based on the second split line beam, the first spectral data representing a one-dimensional per-wavelength intensity distribution as a function of the location on the monitored plasma plane in the second horizontal direction.
8. The plasma monitoring system of claim 7, wherein the first optical beam receiver comprises:
a first lens unit condensing the first incident light beam; and
a first filter having a slit to pass the first ray beam among the converging beams of the first lens unit.
9. The plasma monitoring system of claim 7, wherein the first two-dimensional detector comprises:
a first diffraction grating that splits the second split off-line beam to produce a first per-wavelength diffracted beam; and
a first image sensor that generates first spectral data based on the first per-wavelength diffracted beam.
10. The plasma monitoring system of claim 7, wherein the second plasma sensing device comprises:
a second beam receiver that filters the second incident beam to generate a second line beam corresponding to the monitored plasma plane;
a second splitter that splits the second line beam to produce a third split line beam and a fourth split line beam;
a second one-dimensional detector that generates second intensity data based on the third split off-line beam, the second intensity data representing a one-dimensional overall intensity distribution as a function of position on the monitored plasma plane in the first horizontal direction; and
a second two-dimensional detector that generates second spectral data based on the fourth split line beam, the second spectral data representing a one-dimensional per-wavelength intensity distribution as a function of the location on the monitored plasma plane in the first horizontal direction.
11. The plasma monitoring system of claim 10, wherein the second optical beam receiver comprises:
a second lens unit condensing the second incident light beam; and
a second filter having a slit to pass the second line beam among the condensed beams of the second lens unit.
12. The plasma monitoring system of claim 10, wherein the second two-dimensional detector comprises:
a second diffraction grating that splits the fourth split line beam to produce a second per-wavelength diffracted beam; and
a second image sensor that generates second spectral data based on the second per-wavelength diffracted beam.
13. The plasma monitoring system of claim 1, further comprising:
a third plasma sensing device located in an opposite direction of the first horizontal direction from the center point of the monitoring plasma plane and generating a third detection signal with respect to the monitoring plasma plane based on a third incident light beam irradiated from the monitoring plasma plane in the opposite direction of the first horizontal direction; and
a fourth plasma sensing device located in an opposite direction of the second horizontal direction from the center point of the monitoring plasma plane and generating a fourth detection signal with respect to the monitoring plasma plane based on a fourth incident light beam irradiated from the monitoring plasma plane in the opposite direction of the second horizontal direction.
14. The plasma monitoring system of claim 13, wherein the controller detects a one-dimensional plasma distribution according to a position on the monitored plasma plane in the second direction based on the first detection signal and the third detection signal, and detects a one-dimensional plasma distribution according to a position on the monitored plasma plane in the first direction based on the second detection signal and the fourth detection signal.
15. The plasma monitoring system of claim 1, further comprising:
a third plasma sensing device located in a third horizontal direction from a center point of another monitoring plasma plane having a vertical height different from the monitoring plasma plane and generating a third detection signal with respect to the another monitoring plasma plane based on a third incident light beam irradiated from the another monitoring plasma plane in the third horizontal direction; and
a fourth plasma sensing device located in a fourth horizontal direction from the center point of the other monitored plasma plane and generating a fourth detection signal with respect to the other monitored plasma plane based on a fourth incident light beam irradiated from the other monitored plasma plane in the fourth horizontal direction, wherein the fourth horizontal direction is perpendicular to the third horizontal direction.
16. The plasma monitoring system of claim 15, wherein the controller detects three-dimensional plasma distribution information about a plasma space in the plasma chamber by performing a convolution operation based on the first detection signal and the second detection signal and by performing a convolution operation based on the third detection signal and the fourth detection signal, and controls the plasma process based on the three-dimensional plasma distribution information.
17. The plasma monitoring system of claim 1, further comprising:
a mounting device to which the first and second plasma sensing devices are attached; and
an actuator controlling the vertical position of the mounting device to sequentially vary the vertical height of the monitored plasma plane.
18. The plasma monitoring system of claim 17, wherein the controller detects three-dimensional plasma distribution information about a plasma space in the plasma chamber by performing a convolution operation a plurality of times based on the first and second detection signals corresponding to the sequentially changing vertical heights of the monitored plasma plane, and controls the plasma process based on the three-dimensional plasma distribution information.
19. A plasma sensing device located in a first horizontal direction from a center point of a monitoring plasma plane in a plasma chamber, the plasma sensing device comprising:
a light beam receiver that filters an incident light beam that is illuminated from the monitoring plasma plane in the first horizontal direction to generate a line light beam corresponding to the monitoring plasma plane;
a splitter that splits the line beam to produce two split line beams;
a one-dimensional detector that generates intensity data based on one of the two split line beams, the intensity data representing a one-dimensional overall intensity distribution as a function of position on the monitored plasma plane in a second horizontal direction perpendicular to the first horizontal direction;
a diffraction grating that splits the other of the two split line beams to produce a diffracted beam per wavelength; and
an image sensor that generates spectral data based on the per-wavelength diffracted beam, the spectral data representing a one-dimensional per-wavelength intensity distribution as a function of the location on the monitored plasma plane in the second horizontal direction.
20. A method of controlling a plasma process, the method comprising:
generating a first detection signal with respect to a first horizontal direction based on a first incident light beam irradiated from a monitoring plasma plane in the first horizontal direction from a center point of the monitoring plasma plane;
generating a second detection signal with respect to the second horizontal direction based on a second incident light beam irradiated from the monitoring plasma plane in a second horizontal direction from the center point of the monitoring plasma plane, the second horizontal direction being perpendicular to the first horizontal direction;
detecting two-dimensional plasma distribution information on the monitoring plasma plane by performing a convolution operation based on the first detection signal and the second detection signal; and is
Controlling a plasma process of the plasma chamber based on the two-dimensional plasma distribution information.
Technical Field
Example embodiments relate generally to plasma processing, and more particularly, to a plasma sensing device, a plasma monitoring system including the same, and a method of controlling a plasma process.
Background
Deposition and etching in a plasma environment are the two most common plasma processes used to form patterned layers in integrated circuit fabrication. The key point for successful implementation of these processes is to control the chemistry and impurity levels in the plasma chamber or process chamber. To ensure that the correct amount of film is deposited or etched, it is necessary to monitor the plasma conditions in the process chamber during the plasma process. Optical Emission Spectrometers (OES) are a commercially available device for detecting the presence and relative concentration of various gas species in a plasma chamber. For example, OES may be used to determine process endpoints. However, OES typically provide the bulk plasma characteristics in the plasma chamber, thereby making the sensitivity low.
Disclosure of Invention
According to an exemplary embodiment, a plasma monitoring system includes a plasma chamber, a first plasma sensing device, a second plasma sensing device, and a controller. The plasma chamber performs a plasma process. The first plasma sensing device is located in a first horizontal direction from a center point of a monitoring plasma plane in the plasma chamber, and generates a first detection signal with respect to the monitoring plasma plane based on a first incident light beam irradiated from the monitoring plasma plane in the first horizontal direction. The second plasma sensing device is located in a second horizontal direction from a center point of the monitoring plasma plane, wherein the second horizontal direction is perpendicular to the first horizontal direction, and generates a second detection signal with respect to the monitoring plasma plane based on a second incident light beam irradiated from the monitoring plasma plane in the second horizontal direction. The controller detects two-dimensional plasma distribution information about a monitored plasma plane by performing a convolution operation based on the first detection signal and the second detection signal, and controls the plasma process based on the two-dimensional plasma distribution information.
According to an exemplary embodiment, a plasma sensing device located in a first horizontal direction from a center point of a monitoring plasma plane in a plasma chamber includes: a beam receiver filtering an incident beam irradiated from the monitoring plasma plane in a first horizontal direction to generate a line beam corresponding to the monitoring plasma plane; a splitter for splitting the line beam to produce two split line beams; a one-dimensional detector for generating intensity data based on one of the two split line beams, the intensity data representing a one-dimensional overall intensity distribution according to a position on a monitored plasma plane in a second horizontal direction perpendicular to the first horizontal direction; a diffraction grating for dividing the other of the two split line beams to produce diffracted beams per wavelength; and an image sensor that generates spectral data based on the diffracted light beams per wavelength, the spectral data representing a one-dimensional intensity distribution per wavelength according to a position on the monitored plasma plane in the second horizontal direction.
According to an exemplary embodiment, a method of controlling a plasma process includes: generating a first detection signal with respect to a first horizontal direction based on a first incident light beam irradiated from a monitoring plasma plane in the first horizontal direction from a center point of the monitoring plasma plane; generating a second detection signal with respect to a second horizontal direction based on a second incident light beam irradiated from the monitor plasma plane in a second horizontal direction from a center point of the monitor plasma plane, the second horizontal direction being perpendicular to the first horizontal direction; detecting two-dimensional plasma distribution information on a monitoring plasma plane by performing a convolution operation based on the first detection signal and the second detection signal; and controlling a plasma process of the plasma chamber based on the two-dimensional plasma distribution information.
Drawings
Various features will become apparent to those skilled in the art by describing in detail exemplary embodiments with reference to the attached drawings, wherein:
FIG. 1 shows a diagram of a plasma monitoring system according to an example embodiment.
Fig. 2 illustrates a cross-sectional view of a plasma monitoring system according to an exemplary embodiment.
Fig. 3 illustrates a perspective view of a plasma monitoring system according to an exemplary embodiment.
Fig. 4 shows a plan view of the plasma monitoring system of fig. 3.
Fig. 5 and 6 show side views of the plasma monitoring system of fig. 3.
Fig. 7 shows a perspective view of an exemplary embodiment of a light beam receiver included in a plasma sensing device according to an exemplary embodiment.
Fig. 8 shows a side view of the light beam receiver of fig. 7.
FIG. 9 shows a diagram of a plasma sensing device, according to an example embodiment.
Fig. 10 shows a diagram of an example of intensity data produced by a one-dimensional detector included in a plasma sensing device according to an example embodiment.
Fig. 11 shows a diagram of an example of a spectral image produced by a two-dimensional detector included in a plasma sensing device according to an example embodiment.
Fig. 12 shows a diagram of an example of spectral data generated by a two-dimensional detector included in a plasma sensing device according to an example embodiment.
Fig. 13 shows a flow diagram of a method of controlling a plasma process according to an example embodiment.
Fig. 14 and 15 show diagrams of examples of intensity data produced by a one-dimensional detector included in a plasma sensing device according to an example embodiment.
Fig. 16 shows a diagram of a two-dimensional plasma distribution obtained by a convolution operation based on the data of fig. 14 and 15.
Fig. 17A and 17B show diagrams of examples of spectral data generated by a two-dimensional detector included in a plasma sensing device according to an example embodiment.
Fig. 18 shows a diagram of a two-dimensional plasma distribution obtained by a convolution operation based on the data of fig. 17A and 17B.
Fig. 19, 20, and 21 show perspective views of a plasma monitoring system according to an exemplary embodiment.
Detailed Description
Various exemplary embodiments will be described more fully hereinafter with reference to the accompanying drawings, in which some exemplary embodiments are shown. In the drawings, like numbering represents like elements throughout. Duplicate descriptions may be omitted.
For ease of illustration and description, the exemplary embodiments are described using orthogonal sets of X, Y, and Z axes. The X-axis, Y-axis, and Z-axis are used for three perpendicular directions along the three directions, and are not limited to a specific direction.
The X-direction corresponds to a first horizontal direction, the Y-direction corresponds to a second horizontal direction, and the Z-direction corresponds to a vertical direction. If no exception is given, the Z-direction represents a vertical direction perpendicular to the wafer surface in the plasma chamber or perpendicular to the plane of the monitored plasma. In the present disclosure, X, Y and Z may be used to indicate directions, and alternatively indicate positions or coordinates in the respective directions.
Fig. 1 is a diagram illustrating a plasma monitoring system according to an exemplary embodiment, and fig. 2 is a sectional view of the plasma monitoring system according to an exemplary embodiment. Referring to fig. 1 and 2, the
The first
The first
The second
Each of the first detection signal PDI1 and the second detection signal PDI2 may include intensity data and spectral data. The intensity data may represent a one-dimensional overall intensity distribution according to each of a position X in the first horizontal direction X and a position Y in the second horizontal direction Y on the monitor plasma plane MPN. The spectral data may represent a one-dimensional per-wavelength intensity distribution according to each of a position X in the first horizontal direction X and a position Y in the second horizontal direction Y on the monitoring plasma plane MPN. One-dimensional plasma distributions of the first detection signal PDI1 and the second detection signal PDI2 will be described with reference to fig. 10, 11, and 12.
To provide the first and second detection signals PDI1 and PDI2, each of the first and second
The light beam receiver may filter each of the first incident light beam BX and the second incident light beam BY to generate a line beam corresponding to the monitoring plasma plane MPN. The splitter splits the line beam to produce two split line beams. The one-dimensional detector may generate intensity data based on one of the two separate line beams. The intensity data may represent a one-dimensional overall intensity distribution according to each position on the monitored plasma plane MPN in each of the first horizontal direction X and the second horizontal direction Y. The diffraction grating may split the other of the two split line beams to produce a diffracted beam per wavelength. The image sensor may generate spectral data based on each wavelength of the diffracted beam. The spectral data may represent a one-dimensional per-wavelength intensity distribution according to each position on the monitored plasma plane MPN in each of the first horizontal direction X and the second horizontal direction Y.
The
In some exemplary embodiments, the first detection signal PDI1 may include first intensity data representing a one-dimensional overall intensity distribution according to position Y on the monitored plasma plane MPN in the second horizontal direction Y, and the second detection signal PDI2 may include second intensity data representing a one-dimensional overall intensity distribution according to position X on the monitored plasma plane MPN in the first horizontal direction X. In this case, the
In some exemplary embodiments, the first detection signal PDI1 may include first spectral data representing a one-dimensional per-wavelength intensity distribution according to a position Y on the monitored plasma plane MPN in the second horizontal direction Y, and the second detection signal PDI2 may include second spectral data representing a one-dimensional per-wavelength intensity distribution according to a position X on the monitored plasma plane MPN in the first horizontal direction X. In this case, the
Accordingly, the plasma sensing device and the plasma monitoring system including the same according to example embodiments may provide two-dimensional or three-dimensional plasma distribution information in real time using orthogonality of detection signals, thereby improving productivity of a plasma process.
As shown in fig. 2, the
The
In an exemplary embodiment, the
The
A door for opening and closing the loading/unloading port of the wafer W may be provided in a sidewall of the
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For example, the
In an exemplary embodiment, the
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When radio frequency power having a predetermined frequency is applied to the
In an exemplary embodiment, the
Specifically, the
In the present disclosure, the monitoring plasma plane MPN is a planar portion of the plasma space PLS to be monitored. The monitoring plasma plane MPN can be a very thin space in the form of a plate. The thickness of the monitor plasma plane MPN may be determined according to the performance or resolution of the plasma sensing device. The central point CP of the monitoring plasma plane MPN may overlap and be spaced apart from the center of the wafer W along the vertical direction Z. The monitor plasma plane MPN may extend further along the first horizontal direction X and the second horizontal direction Y than the wafer W.
As shown in fig. 2, the first and second
Fig. 3 is a perspective view of a plasma monitoring system according to an exemplary embodiment. Fig. 4 is a plan view of the plasma monitoring system of fig. 3. Fig. 5 and 6 are side views of the plasma monitoring system of fig. 3. For convenience of explanation, the first and second
Referring to fig. 3 to 6, the plasma monitoring system may include a first
The first
The first
The second
The second
Fig. 7 is a perspective view of an exemplary embodiment of a light beam receiver included in a plasma sensing device according to an exemplary embodiment, and fig. 8 is a side view of the light beam receiver of fig. 7. As an example, fig. 7 and 8 show the first
Referring to fig. 7 and 8, the
The
The second
The lenses of the second lens unit may have a wide beam acceptance angle so as to receive light corresponding to the diameter of the monitoring plasma plane MPN in the first horizontal direction X. The slits of the second filter may extend in the first horizontal direction X and have a thinner width in the vertical direction Z. The length of the slit of the second filter in the first horizontal direction X may be determined to correspond to light irradiated from one end point of the diameter of the monitoring plasma plane MPN in the first horizontal direction X and light irradiated from the other end point of the diameter of the monitoring plasma plane MPN in the first horizontal direction X. As described with reference to fig. 8, the width of the slit of the second filter in the vertical direction Z may be determined such that light irradiated from the monitoring plasma plane MPN may pass through the slit and light irradiated from portions located above and below the monitoring plasma plane MPN may be blocked by the second filter.
By way of example, FIG. 9 illustrates other components of first
Referring to fig. 3 to 6 and 9, the first
The first one-
The first two-
The
The
The
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The second one-
The second two-dimensional detector 440 may include a second diffraction grating and a second image sensor. The second diffraction grating may split the fourth split line beam LBY2 to produce a second diffracted beam per wavelength. The second image sensor may generate second spectral data based on the second diffracted light beams per wavelength, wherein the second spectral data represents a one-dimensional intensity distribution per wavelength according to a position X on the monitored plasma plane MPN in the first horizontal direction X.
Fig. 10 illustrates an example of intensity data produced by a one-dimensional detector included in a plasma sensing device according to an example embodiment. Fig. 11 illustrates an example of a spectral image generated by a two-dimensional detector included in a plasma sensing device according to an example embodiment. Fig. 12 shows an example of spectral data generated by a two-dimensional detector included in a plasma sensing device according to an example embodiment.
Fig. 10 shows exemplary intensity data for monitoring the plasma state of the plasma plane MPN. The intensity data represents a one-dimensional overall intensity distribution according to each of the position in the second horizontal direction Y and the position in the first horizontal direction X on the monitor plasma plane MPN.
Fig. 11 shows an exemplary image captured by an image sensor included in a two-dimensional detector. The horizontal line in fig. 11 corresponds to the wavelength of the plasma on the monitored plasma plane MPN. In other words, the horizontal line in fig. 11 corresponds to the intensity distribution per wavelength according to each of the position in the second horizontal direction Y and the position in the first horizontal direction X on the monitoring plasma plane MPN.
Fig. 12 shows spectral data for four main peak wavelengths. In fig. 12, 706.75, 750.75, 777.25, and 811.75 represent nanometer (nm) wavelengths of exemplary four major gas species. In other words, the spectral data of fig. 12 represents the intensity distribution per wavelength according to each of the position in the second horizontal direction Y and the position in the first horizontal direction X on the monitoring plasma plane MPN.
In optical simulations, radiometry based on the overall intensity of an incident light beam and/or photometric measurement based on the color distribution (depending on the wavelength of the incident light beam) can be used to analyze the characteristics of the incident light beam. The results of the radiometric and/or photometric measurements may be obtained from the flux of the gas species.
Fig. 13 is a flowchart illustrating a method of controlling a plasma process according to an example embodiment.
Referring to fig. 13, the first
The second
Two-dimensional plasma distribution information on the monitored plasma plane MPN may be detected by performing a convolution operation based on the first and second detection signals PDI1 and PDI2 (S300). The convolution operation is disclosed with reference to fig. 16 to 18.
The plasma process of the
Fig. 14 and 15 are diagrams illustrating examples of intensity data generated by a one-dimensional detector included in a plasma sensing device according to an exemplary embodiment. Fig. 14 shows an example of first intensity data representing a one-dimensional overall intensity distribution according to a position Y on the monitored plasma plane MPN in the second horizontal direction Y. Fig. 15 shows an example of second intensity data representing a one-dimensional overall intensity distribution according to a position X on the monitored plasma plane MPN in the first horizontal direction X. In addition, fig. 14 and 15 show intensity distributions along the Focal Line (FL) of the above-described first
Fig. 16 is a diagram showing a two-dimensional plasma distribution obtained by a convolution operation based on the data of fig. 14 and 15. The first intensity data of fig. 14 and the second intensity data of fig. 15 may be represented by a function f and a function g, respectively. The functions f and g may be transformed into functions f (x) and g (x) by feature parameter transformation. When the convolution operation of the functions f (x) and g (x) is performed using the orthogonality of the functions f (x) and g (x), a two-dimensional plasma distribution of the monitor plasma plane MPN can be obtained.
As described above, the first detection signal PDI1 may include first intensity data representing a one-dimensional overall intensity distribution according to a position Y on the monitor plasma plane MPN in the second horizontal direction Y, and the second detection signal PDI2 may include second intensity data representing a one-dimensional overall intensity distribution according to a position X on the monitor plasma plane MPN in the first horizontal direction X. In this case, the
Fig. 17A and 17B are diagrams illustrating an example of spectral data generated by a two-dimensional detector included in a plasma sensing device according to an exemplary embodiment. Fig. 17A shows an example of first spectral data representing a one-dimensional intensity distribution per wavelength according to a position Y on the monitored plasma plane MPN in the second horizontal direction Y. Fig. 17B shows an example of second spectral data representing a one-dimensional per-wavelength intensity distribution according to a position X on the monitored plasma plane MPN in the first horizontal direction X. In fig. 17A and 17B, 706.75, 750.75, 777.25, and 811.75 represent nanometer (nm) wavelengths of exemplary four major gas species.
Fig. 18 is a diagram showing a two-dimensional plasma distribution obtained by a convolution operation based on the data of fig. 17A and 17B. The first spectral data of fig. 17A and the second spectral data of fig. 17B can be represented by a function f and a function g, respectively, in the same manner as the convolution operation of the intensity data. The functions f and g may be transformed into functions f (x) and g (x) by feature parameter transformation. When the convolution operation of the functions f (x) and G (x1) is performed using the orthogonality of the functions f (x) and G (x), a two-dimensional per-wavelength intensity distribution of the monitoring plasma plane MPN can be obtained.
As described above, the first detection signal PDI1 may include first spectral data representing a one-dimensional per-wavelength intensity distribution according to a position Y on the monitor plasma plane MPN in the second horizontal direction Y, and the second detection signal PDI2 may include second spectral data representing a one-dimensional per-wavelength intensity distribution according to a position X on the monitor plasma plane MPN in the first horizontal direction X. In this case, the
Fig. 19 is a perspective view of a plasma monitoring system according to an exemplary embodiment. For convenience of explanation, components other than the plasma sensing device are omitted in fig. 19.
Referring to fig. 19, a
The first
The third
The first, second, third and fourth
The first
The second
The third
The fourth
Accordingly, the first and third detection signals may represent a one-dimensional plasma distribution according to a position Y on the monitor plasma plane MPN in the second horizontal direction Y, and the second and fourth detection signals may represent a one-dimensional plasma distribution according to a position X on the monitor plasma plane MPN in the first horizontal direction X. Using two detection signals for each direction, a more accurate one-dimensional plasma distribution can be obtained.
The
In the following, exemplary embodiments of a plasma monitoring system for detecting three-dimensional plasma distribution information are described. Fig. 20 and 21 are perspective views of a plasma monitoring system according to an exemplary embodiment. For convenience of explanation, components other than the plasma sensing device are omitted in fig. 20 and 21.
Referring to fig. 20, the
The first
The second
The third plasma sensing device 200b generates a third detection signal with respect to the second monitor plasma plane MPN2 based on the third incident light beam BXb irradiated from the second monitor plasma plane MPN2 in the opposite direction-X of the first horizontal direction X. The third detection signal may represent a one-dimensional plasma distribution according to a position Y on the second monitored plasma plane MPN2 in the second horizontal direction Y.
The fourth
The fifth
The sixth
Fig. 20 shows that the first, second, third, fourth, fifth and sixth
The
Accordingly, the
Referring to fig. 21, the
The first
The first
The second
The first
The
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