阅读说明：本技术 存储器装置中命令和地址调换的集中放置 (Centralized placement of command and address swapping in memory devices ) 是由 吉田和宏 于 2020-02-07 设计创作，主要内容包括：存储器装置、存储器系统和系统包含存储器装置,所述存储器装置具有用于耦合命令和地址(CA)输入信号的接合垫区,以及用于将信息存储在存储器单元中的存储器单元区。集中CA接口区包含耦合到所述CA输入信号的输入电路。所述输入电路中的至少两个成对配置。每一对包含耦合到第一输入且被配置成生成第一输出的第一输入电路,以及耦合到第二输入且被配置成生成第二输出的第二输入电路。每一对还包含安置于所述第一输入电路和所述第二输入电路之间的调换电路。所述调换电路响应于控制信号针对第一内部信号选择所述第一输出或所述第二输出中的一个,且针对第二内部信号选择所述第一输出和所述第二输出中的另一个。(Memory devices, memory systems, and systems include a memory device having a pad area for coupling Command and Address (CA) input signals, and a memory cell area for storing information in memory cells. The centralized CA interface region includes input circuitry coupled to the CA input signals. At least two of the input circuits are configured in pairs. Each pair includes a first input circuit coupled to a first input and configured to generate a first output, and a second input circuit coupled to a second input and configured to generate a second output. Each pair also includes a swap circuit disposed between the first input circuit and the second input circuit. The swapping circuit selects one of the first output or the second output for a first internal signal and the other of the first output and the second output for a second internal signal in response to a control signal.)

1. A memory device, comprising:

a bond pad region including two or more bond pads for operably coupling to an external signal and two or more CA input signals;

a memory cell area for storing information in a plurality of memory cells;

a centralized CA interface region including two or more CA input circuits operably coupled to the two or more CA input signals, wherein at least two of the two or more CA input circuits are configured in a CA pair, and each CA pair includes:

a first CA input circuit operably coupled to a first of the two or more CA input signals and configured to generate a first CA output;

a second CA input circuit operably coupled to a second of the two or more CA input signals and configured to generate a second CA output; and

a swap circuit disposed between the first and second CA input circuits, the swap circuit configured to select one of the first and second CA outputs for a first internal CA signal and the other of the first and second CA outputs for a second internal CA signal in response to a control signal.

2. The memory device of claim 1, further comprising at least one additional memory device operably coupled to the memory device to form a memory system, wherein the swap circuit comprises:

a first transpose circuit for selecting the first CA output as the first internal CA signal when the control signal is negated; and

a second transpose circuit for selecting the second CA output as the second internal CA signal when the control signal is negated; and

the first swap circuit is for selecting the second CA output and the second swap circuit is for selecting the first CA output when the control signal is asserted.

3. The memory device of claim 1, further comprising at least one additional memory device operably coupled to the memory device, such that the memory device and the at least one additional memory device comprise one or more pairs of memory devices, and each pair includes:

a first memory device oriented in a first direction, wherein the control signal is configured to be in an asserted state; and

a second memory device oriented in a second direction, wherein the control signal is configured to be in a negative state.

4. The memory device of claim 3, wherein the second direction is rotated relative to the first direction.

5. The memory device of any one of claim 1, further comprising:

one or more processors; and

a memory controller operably coupled to the memory device and the one or more processors;

wherein the one or more processors, the memory controller, and the memory device are coupled to form a system; and is

Wherein the swapping circuit further comprises:

a first transpose circuit for selecting the first CA output as the first internal CA signal when the control signal is negated;

a second transpose circuit for selecting the second CA output as the second internal CA signal when the control signal is negated; and

the first swap circuit is for selecting the second CA output and the second swap circuit is for selecting the first CA output when the control signal is asserted.

6. The memory device of claim 1, 2, 3, or 5, wherein each of the first and second CA input circuits includes a buffer circuit and a latch circuit configured for capturing a state of its respective CA input signal in response to a clock signal.

7. The memory device of claim 6, wherein each of the first and second CA input circuits includes a delay circuit configured for delaying its respective CA input signal relative to the clock signal.

8. The memory device of claim 1, 2, 3, or 5, wherein:

the two or more CA input signals comprise six input signals;

the two or more CA input circuits comprise six CA input circuits corresponding to the six input signals; and is

The CA pair includes three CA pairs for the six CA input circuits.

9. The memory device of claim 8, wherein:

a first CA pair operably coupled to a CA0 input signal and a CA5 input signal;

a second CA pair is operably coupled to the CA1 input signal and the CA4 input signal; and is

The third CA pair is operably coupled to the CA2 input signal and the CA3 input signal.

10. The memory device of claim 8, wherein:

the two or more CA input signals comprise a seventh input signal;

the two or more CA input circuits include a seventh input circuit corresponding to the seventh input signal;

a first CA pair operably coupled to a CA0 input signal and a CA6 input signal;

a second CA pair is operably coupled to the CA1 input signal and the CA5 input signal;

a third CA pair is operably coupled to the CA2 input signal and the CA4 input signal; and is

A non-associated CA input circuit is operably coupled to the CA3 input signal.

11. The memory device of claim 1, 2, 3, or 5, wherein the centralized CA interface region is configured in a layout arrangement such that the two or more CA input circuits are arranged to have:

a first pair of CA input circuits adjacently arranged in a mirror relationship in a first direction; and

at least one additional pair of CA input circuits adjacently arranged in the mirror relationship and arranged in a second direction relative to the first pair of CA input circuits.

12. The memory device of claim 11, further comprising a clock buffer circuit adjacent to at least one of the two or more CA input circuits and configured to supply one or more clock signals to each of the two or more CA input circuits, wherein a tree structure is arranged between the mirrored relationships of the first pair of CA input circuits and the at least one additional pair of CA input circuits.

13. The memory device of claim 12, wherein one of the two or more CA input circuits buffers a chip select signal and the chip select signal is configured to disable the one or more clock signals when the chip select signal is negated.

14. The memory device of claim 1, 2, 3, or 5, wherein the centralized CA interface region:

configured in a layout arrangement such that the two or more CA input circuits comprise eight CA input circuits arranged adjacently in a two-by-four matrix; and is

A clock buffer circuit is included adjacent to at least one of the two or more CA input circuits.

15. The memory device of claim 1, 2, 3, or 5, wherein the centralized CA interface region is configured in a layout arrangement such that the two or more CA input circuits are arranged to have:

a first pair of CA input circuits adjacently arranged in a mirror relationship in a first direction;

a second pair of CA input circuits adjacently arranged in the first direction in the mirror image relationship; and

a third pair of CA input circuits adjacently arranged in the first direction in the mirror relationship; and is

Wherein the second pair of CA input circuits are arranged adjacent to the first pair of CA input circuits in a second direction such that the mirror relationships are aligned, and the third pair of CA input circuits are arranged adjacent to the first pair of CA input circuits in the first direction.

Technical Field

Embodiments of the present disclosure relate to placement of circuitry in a memory device, and more specifically to placement of circuitry for command and address signals in a memory device.

Background

Memory devices are commonly provided as internal semiconductor integrated circuits in many computer and other electronic systems. There are many different types of memory, including, for example, Random Access Memory (RAM), Read Only Memory (ROM), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SDRAM), Resistive Random Access Memory (RRAM), double data rate memory (DDR), low power double data rate memory (LPDDR), Phase Change Memory (PCM), and flash memory.

Electronic systems, such as memory systems, typically include one or more types of memory, and the memory is typically coupled to one or more communication channels within the memory system. Time-varying signals in such systems are used to convey information (e.g., data) over one or more conductors, commonly referred to as signal lines. These signal lines are typically bundled together to form a communication bus, such as an address or data bus.

Memory systems typically operate in portable devices with limited power supplied by a battery or other energy storage device. In these low power systems, and in general, for most memory systems, there is a continuing need for higher operating performance and at lower power. Thus, designers are constantly striving to achieve increased operating speeds and ways to reduce power within memory systems and on memory devices.

The power consumption in many semiconductor devices is usually viewed as the power of the digital signal, which can be considered as the CV²F is proportional to the signal load and the signal frequency; where C is the capacitive load on the signal, V is the voltage range over which the signal switches, and F is the average frequency of the signal switching. There is a continuing need to reduce the power consumed by memory devices by addressing various design elements of the memory devices, which may include circuit design, logic design, and layout considerations.

Disclosure of Invention

Embodiments of the present disclosure include a memory device, comprising: a bond pad region including two or more bond pads for operably coupling to an external signal and two or more CA input signals; and a memory cell area for storing information in the plurality of memory cells. The memory device also includes a centralized CA interface region including two or more CA input circuits operably coupled to the two or more CA input signals, wherein at least two of the two or more CA input circuits are configured in a CA pair. Each CA pair includes: a first CA input circuit operably coupled to a first of the two or more CA input signals and configured to generate a first CA output; and a second CA input circuit operably coupled to a second of the two or more CA input signals and configured to generate a second CA output. Each pair also includes a swap circuit disposed between the first and second CA input circuits, the swap circuit configured to select one of the first or second CA outputs for the first internal CA signal and the other of the first and second CA outputs for the second internal CA signal in response to a control signal.

Embodiments of the present disclosure also include a memory system including a plurality of memory devices. Each memory device includes: a memory cell area for storing information in a plurality of memory cells; and a centralized CA interface region including two or more CA input circuits operably coupled to the two or more CA input signals. At least two of the two or more CA input circuits are configured in a CA pair. Each CA pair includes a first CA input circuit operably coupled to a first one of the two or more CA input signals and configured to generate a first CA output, and includes a first swapping circuit for selecting the first CA output as a first internal CA signal when the control signal is negated. Each CA pair also includes a second CA input circuit operably coupled to a second one of the two or more CA input signals and configured to generate a second CA output, and includes a second swapping circuit for selecting the second CA output as a second internal CA signal when the control signal is negated. When the control signal is asserted, the first swap circuit is used to select the second CA output, and the second swap circuit is used to select the first CA output.

Still other embodiments of the present disclosure include a system that includes one or more processors, a memory controller operably coupled to the one or more processors, and one or more memory devices operably coupled to the memory controller. Each memory device includes: a bond pad region including two or more bond pads for operably coupling to an external signal and two or more CA input signals; and a memory cell area for storing information in the plurality of memory cells. Each memory device also includes a centralized CA interface region including two or more CA input circuits operably coupled to the two or more CA input signals, wherein at least two of the two or more CA input circuits are configured in a CA pair. Each CA pair includes: a first CA input circuit operably coupled to a first of the two or more CA input signals and configured to generate a first CA output; and a second CA input circuit operably coupled to a second of the two or more CA input signals and configured to generate a second CA output. Each CA pair also includes a pair of swap circuits disposed between the first CA input circuit and the second CA input circuit. Each swap circuit is configured to select either a first CA output or a second CA output for the internal CA signal in response to a control signal, wherein each swap circuit of the pair selects a CA output that is different from the first CA output and the second CA output.

Drawings

Fig. 1 is a layout diagram of a memory device.

FIG. 2 is a layout diagram showing details of a collective Command and Address (CA) interface region.

Fig. 3 is a layout diagram showing details of a CA interface region according to another embodiment.

Fig. 4 is a layout diagram showing details and clock signals of the CA interface region.

Fig. 5 is a detailed layout diagram showing the configuration of the CA interface area.

Fig. 6 is a simplified layout diagram showing an alternative configuration of CA input circuitry for the CA interface region.

Fig. 7 shows a stack of two memory devices, where one of the memory devices is rotated 180 degrees.

Fig. 8 shows a simplified circuit diagram for CA swapping.

Fig. 9 shows a simplified circuit diagram for CA swap from a bond pad.

Fig. 10 is a layout diagram showing details of the CA interface area and the transposed CA signals.

Fig. 11 is a simplified block diagram of a memory module implemented in accordance with one or more embodiments described herein.

Fig. 12 is a simplified block diagram of a system implemented in accordance with one or more embodiments described herein.

Detailed Description

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific examples in which embodiments of the disclosure may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the disclosure. However, other embodiments may be utilized, and structural, material, and process changes may be made without departing from the scope of the present disclosure. The illustrations presented herein are not intended to be actual views of any particular method, system, apparatus, or structure, but are merely idealized representations which are employed to describe the embodiments of the present disclosure. The drawings presented herein are not necessarily drawn to scale. Similar structures or components in the various figures may retain the same or similar numbering to facilitate the reader; however, similarity in numbering does not necessarily mean that the size, composition, configuration, or any other property of the structures or components must be the same.

Reference throughout this specification to "one embodiment," "an embodiment," or similar language means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, the phrases "in one embodiment," "in an embodiment," and similar language throughout this specification may, but do not necessarily, all refer to the same embodiment.

As used herein, spatial relationship terms, such as "below," "lower," "bottom," "above," "upper," "top," "front," "back," "left," "right," and the like, may be used for convenience of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Unless otherwise specified, spatial relationship terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" or "lower" or "on the bottom of other elements or features would then be oriented" above "or" on top of the other elements or features. Thus, the term "below" can encompass both an orientation of above and below, depending on the context in which the term is used, as will be apparent to one of ordinary skill in the art. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial relationship descriptors used herein interpreted accordingly. Furthermore, reference to an element being "on" or "over" another element means and includes the element being directly on top of, adjacent to, below, or in direct contact with the other element. It also includes the presence of other elements between the element and the other element, which elements are indirectly on top of, adjacent to, below, or near the other element. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present.

Some drawings may show signals as a single signal for clarity of presentation and description. It will be understood by one of ordinary skill in the art that the signals may represent a bus of signals, where the bus may have various bit widths, and the invention may be implemented on any number of data signals including a single data signal.

As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Further, it should be understood that any reference to elements herein using designations such as "first," "second," etc., does not limit the number or order of those elements unless such a limitation is explicitly stated. Indeed, these designations may be used herein as a convenient method of distinguishing between two or more elements or instances of an element. Thus, reference to first and second elements does not imply that only two elements may be employed herein or that the first element must precede the second element in some manner. Also, unless stated otherwise, a set of elements may include one or more elements.

As used herein, "and/or" includes any and all combinations, in inclusive and alternative forms, of one or more of the associated listed items.

As used herein, the term "substantially" with respect to a given parameter, property, or condition means and includes the degree to which the given parameter, property, or condition conforms to a degree of variation (e.g., within acceptable manufacturing tolerances) as would be understood by one of ordinary skill in the art. By way of example, depending on the particular parameter, property, or condition being substantially met, the parameter, property, or condition may be at least 90.0% met, at least 95.0% met, at least 99.0% met, or even at least 99.9% met.

An element described herein may include multiple instances of the same element. These elements may be generally indicated by a numeric identifier (e.g., 110), and specifically by a numeric identifier followed by an alphabetic identifier (e.g., 110A) or a numeric identifier preceded by a "dash" (e.g., 110-1). To facilitate the following description, for most elements, the numerical indicators begin with the number of the figure on which the element is introduced or discussed most fully. Thus, for example, the element identifiers on FIG. 1 would be primarily in numerical format 1xx, and the elements on FIG. 4 would be primarily in numerical format 4 xx.

Headings may be included herein to aid in locating certain sections of the detailed description. These headings should not be taken as limiting the scope of the concepts described under any particular heading. Moreover, throughout the specification, concepts described in any particular heading may be applied generally to other sections.

While the various embodiments discussed herein use examples related to single bit memory storage concepts for ease of understanding, the present subject matter is also applicable to many multi-bit schemes. For example, each of the memory cells can be programmed to a different one of at least two data states to represent, for example, a fractional bit value, a single bit value, or a multiple bit (e.g., two, three, four, or more bit numbers) value. For example, a memory cell can be programmed to one of two data states to represent a binary value of "0" or "1" in a single bit. This cell is sometimes referred to as a Single Level Cell (SLC). Cells that are programmable to one of more than two data states are sometimes referred to as multi-level cells (MLCs).

Centralized placement

As used herein, the terms "concentration" and "concentration zone" mean that the components and/or circuits are configured to be brought together such that the components are adjacent in a relatively compact area. For example, Command and Address (CA) input circuits for embodiments of the present disclosure are clustered together such that elements are adjacent in a relatively compact region. This centralized arrangement is in contrast to a local arrangement in which the elements and circuitry are distributed such that they are placed locally to the elements with which they are associated. For example, in conventional memory device arrangements, the CA input circuitry may typically be localized such that it is placed near the bond pads associated therewith, which distributes the CA input circuitry across a large area of the memory device. Unless specifically stated herein, "concentration" and "concentration zones" do not imply a particular location on the memory device. For example, concentrating a region does not mean that the region is placed in a central location of the memory device or in a central location relative to an edge of the memory device.

Embodiments of the present disclosure reduce power of memory devices by placing CA input circuitry in a centralized CA interface region. This centralized placement keeps the CA input circuits in a relatively compact area, which enables compact routing of clock signals as well as other signals. Compact routing reduces the capacitance associated with routing and therefore power consumption, since high power consuming elements of digital signals can be considered as being associated with CVs²F is proportional; where C is the capacitive load on the signal, V is the voltage range over which the signal switches, and F is the average frequency of the signal switching.

In conventional memory devices, the CA input circuitry may be positioned near its associated bond pad. Therefore, the clock signal for the CA input circuit must travel a relatively long distance, increasing the capacitive load on the clock signal, which increases the power consumption for the clock signal. Furthermore, with distributed CA input circuits, the buffer size of the input buffer needs to be larger, and more power is consumed to drive longer distances and thus more capacitance, for the signal to reach its destination elsewhere on the memory device.

Fig. 1 is a layout diagram of a memory device 100. The memory devices are configured in a layout arrangement that includes a memory cell region 110, a CA region 120, and one or more data buffer regions 140, among other regions. The memory cell regions 110 may be arranged in groups, as shown in fig. 1. The row address bus 135 and row group logic may be positioned between an upper portion and a lower portion of the memory cell region 110. The column address bus may be located through upper and lower portions of the memory cell region 110. Although shown as a single bus for clarity, these column addresses may be distributed at various locations within a bank of memory cells in an efficient layout for addressing the various memory cells. The bond pads may be arranged along the left side of the memory device 100.

The data buffer region 140 may be located along an edge of the memory device 100 near a bond pad for one or more data input/output signals.

The CA region 120 may be placed between the pad region and the memory cell region 110. The CA region 120 is configured to buffer and latch the CA input signal, as explained below.

Of course, FIG. 1 is an example layout configuration used as an example to provide details for embodiments of the present disclosure. Many other layout, circuit, logic, and functional partitioning scenarios are possible, and embodiments of the present disclosure may be practiced in these other scenarios.

Fig. 2 is a layout diagram showing details of the CA area 120. At the top of FIG. 2, a small portion of the memory device 100 from FIG. 1 is shown rotated 90 degrees clockwise so that it shows the edge of the memory device 100 in which the CA region 120 is located. The lower portion of fig. 2 shows an enlarged view of the CA region 120. The CA region 120 includes bond pads 202 for bonding to external CA input signals. Bond pads are also shown for power signals such as VSS and VDD. The CA input signals 204 are routed from the bond pads to the centralized CA interface region 225.

Within the centralized CA interface region 225 are eight CA input circuits, one for each of the input signals CA0-CA6, and one for the chip select input signal (CS). Each of the CA input signals 204 is coupled to a buffer that may be configured to buffer and determine the logic level of the CA input signal 204 relative to the voltage reference 206. The CA input circuit generates an internal CA signal (e.g., for CA0-CA6 in this example). Additional details of the CA input circuit are discussed below in discussing the details of FIGS. 3 and 4.

The clock buffer circuit 210 buffers one or more clock input signals (e.g., CK _ t, CK _ c) from the bond pads. The clock signal from the clock buffer may be fed through a CS input circuit where it may be gated by a CS input signal such that when the CS input signal is asserted, the clock output of the CS input circuit follows the clock input signal and when the CS input signal is negated, the clock output level is held at a high or low voltage. The clock output feeds each of the CA input circuits and may feed other circuitry in the logic area 220. Keeping the clock signal shorter helps embodiments of the present disclosure reduce power consumption. Accordingly, placement of the clock buffer circuit 210 near the CA input circuits and also near other circuitry in the logic area 220 may help reduce clock signal routing length.

Internal CA signal 240 feeds circuitry for command logic decoding 250. The internal CA signal 240 may carry different information depending on the state of the memory device 100 and the timing on the CA input signal 204. For example, internal CA signal 240 may be decoded into various commands for memory device 100. At other times, internal CA signal 240 may decode row address information or column address information. Further, in some contexts, address information may be included on the internal CA signal 240 concurrently with command information. Circuitry for column address logic 260 may determine which column addresses should be driven to the column group logic shown in fig. 1 by column address buffer 262. Similarly, command logic decode 250 may determine which row addresses should be driven by row address buffer 272 to the row group logic shown in FIG. 1. Further, the command logic decode 250 may determine or assist in determining the operation of the memory device 100 and the timing of the operation, such as read, write, and refresh.

Fig. 3 is a layout diagram showing details of a centralized CA interface region 325 according to another embodiment. In this figure, the details of the concentrated CA interface region 325 can be seen below the bond pad region 302. FIG. 3 also shows a command logic decode section and a column address buffer similar to those shown in FIG. 2.

Fig. 4 is a layout diagram showing details of the centralized CA interface region 325 and the clock signal 415, according to another embodiment.

Referring to both fig. 3 and 4, an On Die Termination (ODT) may be included near the bond pads in the bond pad area for each of the CA input signals. The wiring from the ODT to CA input circuit 330 may be relatively long, however, the signal at this point of this wiring may be driven from an external memory controller. Thus, the power used to drive these longer signals comes from the memory controller, rather than the power consumed by the memory device 100, while still keeping the input signals within the load specifications for the memory device 100.

Working inward toward line of symmetry 480, each CA input circuit 330 for CA0-CA6 may be configured to include an input buffer circuit 432, a delay circuit 434, a latch circuit 436, and a swap circuit 438. Thus, these CA input circuits 330 may be placed in a mirror relationship in a first direction (e.g., left to right) as pairs of CA input circuits 330, and the pairs of CA input circuits 330 may be stacked in a second direction (e.g., top to bottom). In this arrangement, the first CA pair includes CA input circuits 330 for CA0 and CA6, the second CA pair includes CA input circuits 330 for CA1 and CA5, and the third CA pair includes CA input circuits 330 for CA2 and CA 4. Finally, the fourth CA pair includes a CA input circuit 330 for CA3 and a CA input circuit 330 for CS. It should be noted that the CA input circuit 330 for CS may be configured in a somewhat different manner, as the chip select signal does not require the latch circuit 436, and may require a larger driver to drive the clock signal 415. In other words, this arrangement of the CA input circuits 330 may be placed in a two-by-four matrix.

The layouts of fig. 3 and 4 do not show the wiring between the bond pads and the input buffers. However, an example of such routing can be seen in fig. 2. In all of fig. 2-4, the input signals (e.g., 204 in fig. 2) may include routing lengths such that the length from the bond pad to the respective CA input circuit 330 is substantially the same length for each signal. The substantially equal lengths of the wires ensure that the delay time and the input capacitance are substantially matched. Thus, for signals where the bond pads are far from the CA interface region 225 (e.g., CA0, CA1, CA5, and CA6), the wires between the bond pads may be as directly connected as possible. On the other hand, for signals with bond pads relatively close to the CA interface region 225 (e.g., CA2, CA3, and CA4), the wires between the bond pads may take a tortuous path such that the wire lengths more closely match the wire lengths used for other signals.

As stated earlier, the input buffer circuit 432 may be configured to compare an input signal to a voltage reference to determine a logic level of the input signal.

A delay circuit 434 may be included between the input buffer circuit 432 and the latch circuit 436. The delay circuit may be used to adjust the signal timing of the CA input signal relative to the clock signal 415 to manage the setup and hold times of the latch circuit 436.

Latch circuit 436 may be used to capture the state of the CA input signal at a particular time relative to clock signal 415. Although described as a latch, in various embodiments, the latch circuit 436 may be configured as a latch, flip-flop, or other state retention circuitry configured to capture the state of an input signal relative to the clock signal 415 and retain the captured state on an output signal. The output from the latch circuit 436 feeds a swap circuit 438. Details of the transpose circuit are discussed below with reference to fig. 7-10.

As can be seen from the clock routing of clock signal 415, the required routing length for the clock signal is substantially reduced compared to a layout in which the circuitry associated with the CA input signal may have local positioning near the associated bond pad. Furthermore, the layout arrangement with the CA input circuits 330 that are mirrored and adjacent to each other not only enables a shorter layout, but also a tree structure that closely aligns the clock timing to each of the latches.

The embodiments of fig. 2, 3 and 4 have a small difference in the placement of the CA input circuit 330 and the clock buffer circuits (210, 310, 410, respectively).

In fig. 2 and 3, the clock buffer circuits (210, 310) are placed below the CA input circuit 330 and near the CA input circuit 330 for the CS input, the CA input circuit 330 being placed on the bottom of the two-by-four matrix. This placement results in a longer route from the bond pad to the clock buffer circuit 210, while the clock signal route between the clock buffer circuit 310 and the CA input circuit 330 for the CS input is relatively shorter.

In fig. 4, the clock buffer circuit 410 is placed above the CA input circuit 330 but near the CA input for the CS input, which is placed on top of the two-by-four matrix. This placement makes the route from the bond pads to the clock buffer circuit 310 shorter, and the clock signal route between the clock buffer circuit 310 and the CA input circuit 330 for the CS input short.

All of the embodiments shown in fig. 2-4 substantially reduce the length of clock routing to the CA input circuits 330 after the CS input buffer generating the clock signal 415, because the CS input buffer is placed near the other CA input circuits 330.

Fig. 5 is a detailed layout diagram showing the configuration of the CA interface area. In a similar manner to the embodiment of fig. 2, the CA input circuits 330 are arranged into a first pair of CA input circuits 531(CA0 and CA6), a second pair of CA input circuits 532(CA1 and CA5), a third pair of CA input circuits 533(CA2 and CA4), and an additional pair of CA input circuits 534 for CA3 and CS signals. The clock buffer circuit 510 is placed below the arrangement of the CA input circuit 330. Also shown in FIG. 5 is the actual clock routing for the rising version of clock 514 (PCLKCR) and the relatively falling version of clock 512 (PCLKCF).

Fig. 6 is a simplified layout diagram illustrating an alternative configuration of CA input circuitry 630 for the centralized CA interface region 325. In the embodiment of fig. 2-5, three pairs of CA input circuits 330 are arranged side-by-side in pairs, and the pairs are stacked in the up-down direction. In the embodiment of fig. 6, the first pair (CA0-CA6) is placed at the upper left, the second pair (CA2-CA4) is placed below the first pair, and the third pair (CA1-CA5) is placed at the upper right. These pairs are formed for swapping purposes as explained below, and thus include a swap circuit 660. In this swapped configuration, CA3 does not have another CA signal swapped with it, so its CA input circuit 630 can be placed on its own, but adjacent to other CA input circuits 630 for short clock routing. Similarly, the CSs are not swapped, so their CA input circuits 620 can be placed on their own, but adjacent to other CA input circuits 330. Depending on the routing constraints of the clock signal or other desired parameters, the clock buffer 610 may be placed near the CS input circuit 620. Of course, the pairs may also be arranged in different positions.

2-6 are used as examples for purposes of discussion, other centralized arrangements are possible for other embodiments of the present disclosure. In all of these layout arrangements of fig. 2-6, clock signal routing, as well as other signal routing, is reduced due to the centralized layout in which the CA input circuits 330 are immediately adjacent to each other, or even interfaced with each other. The choice of various arrangements and embodiments of the present disclosure will depend on layout constraints, such as available aspect ratios, available metal layers, routing capacitance, and the like.

Signal exchange with centralized placement

Fig. 7 shows a stack of two memory devices, where one of the memory devices is rotated 180 degrees. In some package configurations, two or more chips of the same type may be stacked on top of each other. Chip A710 and chip B720 are the same type of memory device and include bond pads for CA inputs 0-6 on the left side of the memory device. In some embodiments, chip B720 may be rotated 180 degrees when placed on top of (or below) chip a 710 when stacked in package 730.

In this arrangement, package external signal 714 of chip a 710 is in bottom-to-top order from CA0 to CA 6. Similarly, external signal 724 of chip B720 goes from CA0 to CA6 in bottom-up order. For chip a 710, the on-device bond pads 712 are in bottom-to-top order from CA0 to CA6, so they match in the same order as the external signal 714. However, for chip B720, on-device bond pads 722 are now in bottom-up order from CA6 to CA0, since chip B720 is rotated 180 degrees. In other words, the on-device bond pads 722 for chip B are now in reverse order with the external signal 724. Embodiments of the present disclosure provide a swapping mechanism for these CA signals while in the centralized placement configuration discussed above. The swap circuit is shown in fig. 2-4 and 6 as being positioned between the mirrored pairs.

Fig. 8 shows a simplified circuit diagram for CA swapping. This example includes seven CA addresses on the memory device. Thus, for this example, on one of the memory devices, CA0 and CA6 may need to be exchanged, CA1 and CA5 may need to be exchanged, and CA2 and CA4 may need to be exchanged. Finally, CA3 in the middle of an odd number of signals need not be swapped. Fig. 8 uses CA0 and CA6 as examples, rather than showing all pairs.

The input circuit for CA 0830-0 is coupled to swap circuit 860-0. Similarly, the input circuit for CA 6860-6 is coupled to swap circuit 860-6. The control signal 850 controls the switching of the two swapping circuits (860-0 and 860-6) in the opposite way. As non-limiting examples, the control signal 850 may be coupled to a mode bit in a programmable mode register, configured as a routing option, configured as a bonding option, or other suitable manner of indicating that the memory device needs to swap signals on the CA bus. Of course, similar swap circuits are included (but not shown) for the CA1-CA5 pair and the CA2-CA4 pair, and the CA3 signal does not require swap circuits.

In the swap circuit position shown in FIG. 8 (which may also be referred to as a first state or a negated state), internal signal CA0840-0 (also referred to herein as a first CA output) is coupled to input circuit CA 0830-0 via swap circuit 860-0. Similarly, internal signals CA 6840-6 (also referred to herein as second CA outputs) are coupled to input circuits CA 0830-6 via swap circuits 860-6. Thus, the internal signal follows the input circuit signal in the transposed circuit position shown.

When the swap circuit position is opposite to the swap circuit position shown in FIG. 8 (which may also be referred to as a second state or an asserted state), the internal signal CA0840-0 is coupled to the input circuit CA 6830-6 via swap circuit 860-6. Similarly, internal signals CA 6840-6 are coupled to input circuit CA 0830-0 via swap circuit 860-0. Therefore, the internal signal is transposed with respect to the input circuit signal in a not-shown transposition circuit position.

The names and functions of the states of control signals 850 are arbitrary. For example, if the state is defined as something similar to the normal state or punch-through state, then asserting would mean keeping the signals aligned and negating would mean swapping the signals. On the other hand, if the state is defined as something similar to the swap state, then asserting will mean swapping the signals and negating will mean keeping the signals aligned.

The swap circuit may be configured with any suitable circuitry for selecting an output from one of two inputs in response to the state of the control signal 850. Non-limiting examples include two n-channel transistors in parallel, two p-channel transistors in parallel, two pass gates in parallel, and a multiplexer.

Fig. 9 shows a simplified circuit diagram for CA swap from a bond pad. This configuration is similar to that of fig. 8, except that fig. 9 shows two different swap circuit locations for two different memory devices. Thus, for the CA pair on chip a, the internal CA0 signal is coupled to the CA0 pad via swap 0, and the internal CA6 signal is coupled to the CA6 pad via swap 6. However, for the CA pair on chip B, the swap circuit is in the reverse configuration, such that the internal CA0 signal is coupled to the CA6 pad via swap 6, and the internal CA6 signal is coupled to the CA0 pad via swap 0. Likewise, similar transpose circuits are included (but not shown) for the CA1-CA4 pair and the CA2-CA3 pair.

Fig. 10 is a layout diagram showing details of the CA interface area and the transposed CA signals. In fig. 10, the swapping circuit 1060 is positioned in a central position between the CA input circuits. The bottom portion of fig. 10 shows a schematic representation showing relatively long wires between the bond pads (1030-0 and 1030-6) and the CA input circuits (1030-0 and 1030-6). However, the CA input circuits (1030-0 and 1030-6) and transpose circuits (1060-0 and 1060-6) are positioned very closely. Transpose circuits (1060-0 and 1060-6) generate internal CA signals (1040-0 and 1040-6) with the appropriate bond pads selected based on the state of the control signals.

Conventional memory devices including swap circuitry may have swap circuitry located closer to the input buffer, which is typically located closer to its associated bond pad. In the embodiment of the present disclosure shown in fig. 10, the total routing capacitance, and thus power consumption, is significantly reduced because the distance from the CA input circuit can be made as short as possible.

The swap circuit is typically shown positioned proximate to the latch circuit and coupled to the output of the latch circuit. This configuration and positioning may result in minimal routing and layout footprint. However, embodiments of the present disclosure are not limited thereto. The control signals are typically static and do not change during operation of the memory device. Accordingly, and referring to fig. 4 and 10, swap circuit 1060 may be placed anywhere in the circuit chain of CA input circuit 430. For example, swap circuitry may be placed between the input buffer circuit 432 and the delay circuit 434, between the delay circuit 434 and the latch circuit 436, or after the latch circuit 436. Further, this placement may be functional and/or positional. In other words, even if the swap circuit 1060 is placed in the centermost position, it may still be functionally coupled to the input of the delay circuit 434 rather than the output of the latch circuit 436.

In general, swap circuit 1060 has been described as a swap circuit associated with each CA input circuit 1030. However, since the swapping circuit 1060 is only required in a pair of CA input circuits 1030, the swapping circuit 1060 may be configured from a logical and layout point of view as a single element coupled to each of the CA input circuits 1030 in the pair.

Fig. 11 is a simplified block diagram of a memory module implemented in accordance with one or more embodiments described herein. The memory module 1110 may be configured as a memory system and may include a memory controller 1130 and two or more memory devices 1120 with routing 1140 between the memory devices 1120 and the memory module input/output signals and/or memory controller 1130. Furthermore, the stacked memory device configuration of FIG. 7 is also considered a memory module and a memory system.

Fig. 12 is a simplified block diagram of a system 1200 implemented in accordance with one or more embodiments described herein. The system 1200 may include at least one input device 1202. Non-limiting examples of input devices 1202 include a sensor, keyboard, mouse, touch screen, or other user interface type input. The electronic system 1200 further includes at least one output device 1204. The output device 1204 may be a monitor, touch screen, or speaker. The input device 1202 and the output device 1204 need not be separate from each other. The electronic system 1200 further includes a storage device 1206. An input device 1202, an output device 1204, and a storage device 1206 are coupled to the processor 1208. The electronic system 1200 further includes a memory system 1210 coupled to the processor 1208. Memory system 1210 includes at least one memory cell (e.g., an array of memory cells), where one or more memory cells of memory system 1210 may include a transistor. Additionally, in some embodiments, in accordance with one or more embodiments described herein, one or more memory cells may include and/or may be associated with (e.g., coupled to) one or more measurement circuits. Electronic system 1200 may include computing, processing, industrial, or consumer products. For example, without limitation, electronic system 1200 may include a personal computer or computer hardware component, a server or other networked hardware component, a handheld device, a tablet computer, an electronic notebook, a camera, a telephone, a music player, a wireless device, a display, a chipset, a game, a vehicle, or other known systems.

Conclusion

Embodiments of the present disclosure include a memory device, comprising: a bond pad region including two or more bond pads for operably coupling to an external signal and two or more CA input signals; and a memory cell area for storing information in the plurality of memory cells. The memory device also includes a centralized CA interface region including two or more CA input circuits operably coupled to the two or more CA input signals, wherein at least two of the two or more CA input circuits are configured in a CA pair. Each CA pair includes: a first CA input circuit operably coupled to a first of the two or more CA input signals and configured to generate a first CA output; and a second CA input circuit operably coupled to a second of the two or more CA input signals and configured to generate a second CA output. Each pair also includes a swap circuit disposed between the first and second CA input circuits, the swap circuit configured to select one of the first or second CA outputs for the first internal CA signal and the other of the first and second CA outputs for the second internal CA signal in response to a control signal.

Embodiments of the present disclosure also include a memory system including a plurality of memory devices. Each memory device includes: a memory cell area for storing information in a plurality of memory cells; and a centralized CA interface region including two or more CA input circuits operably coupled to the two or more CA input signals. At least two of the two or more CA input circuits are configured in a CA pair. Each CA pair includes a first CA input circuit operably coupled to a first one of the two or more CA input signals and configured to generate a first CA output, and includes a first swapping circuit for selecting the first CA output as a first internal CA signal when the control signal is negated. Each CA pair also includes a second CA input circuit operably coupled to a second one of the two or more CA input signals and configured to generate a second CA output, and includes a second swapping circuit for selecting the second CA output as a second internal CA signal when the control signal is negated. When the control signal is asserted, the first swap circuit is used to select the second CA output, and the second swap circuit is used to select the first CA output.

Still other embodiments of the present disclosure include a system that includes one or more processors, a memory controller operably coupled to the one or more processors, and one or more memory devices operably coupled to the memory controller. Each memory device includes: a bond pad region including two or more bond pads for operably coupling to an external signal and two or more CA input signals; and a memory cell area for storing information in the plurality of memory cells. Each memory device also includes a centralized CA interface region including two or more CA input circuits operably coupled to the two or more CA input signals, wherein at least two of the two or more CA input circuits are configured in a CA pair. Each CA pair includes: a first CA input circuit operably coupled to a first of the two or more CA input signals and configured to generate a first CA output; and a second CA input circuit operably coupled to a second of the two or more CA input signals and configured to generate a second CA output. Each CA pair also includes a pair of swap circuits disposed between the first CA input circuit and the second CA input circuit. Each swap circuit is configured to select either a first CA output or a second CA output for the internal CA signal in response to a control signal, wherein each swap circuit of the pair selects a CA output that is different from the first CA output and the second CA output.

As used herein, and particularly in the appended claims, the terms "open" and "comprising" are generally intended (e.g., the term "including" should be interpreted as "including but not limited to," the term "having" should be interpreted as "having at least," the term "includes" should be interpreted as "includes but is not limited to," etc.).

Further, if a certain number of an introduced claim recitation is intended, such an intent will be explicitly recited in the claim, and in the absence of such recitation no such intent is present. For example, as an aid to understanding, the following appended claims may contain usage of the introductory phrases "at least one" and "one or more" to introduce claim recitations.

In addition, even if a specific number of an introduced claim recitation is explicitly recited, such recitation should be interpreted to mean at least the recited number (e.g., the bare recitation of "two recitations," without other modifiers, means at least two recitations, or two or more recitations). Further, in those instances where a convention analogous to "at least one of A, B and C, etc." or one or more of "A, B and C, etc." is used, in general, such a structure is intended to encompass a only, B only, C only, a and B, a and C, B and C, or A, B and C, and so forth.

The embodiments of the present disclosure described above and illustrated in the drawings are not intended to limit the scope of the present disclosure, which is to be covered by the appended claims and their legal equivalents. Any equivalent embodiments are within the scope of the present disclosure. Indeed, various modifications of the disclosure, e.g., alternative suitable combinations of the elements described, in addition to those shown and described herein will become apparent to those skilled in the art from the description. Such modifications and embodiments are also within the scope of the appended claims and equivalents.