阅读说明：本技术 陶瓷片加工方法及陶瓷片 (Ceramic wafer processing method and ceramic wafer ) 是由 易辉 于 2019-11-28 设计创作，主要内容包括：本发明公开了一种陶瓷片加工方法及陶瓷片,方法包括：(1)粉体制备处理,包括：(1.1)将Al<Sub>2</Sub>O<Sub>3</Sub>粉末在1350～1500℃进行预烧处理；(1.2)对Al<Sub>2</Sub>O<Sub>3</Sub>粉末进行研磨得到粒度为0.1～9μm的氧化铝陶瓷微粉；(1.3)向氧化铝陶瓷微粉中均匀混合分散剂减弱其中的团聚体；(1.4)对氧化铝陶瓷微粉进行颗粒级配,以使粒度小于1μm的颗粒含量小于40％,且粒度大于5μm的颗粒含量小于10％～15％；(2)成型,包括：(2.1)将粘接剂和塑化剂与氧化铝陶瓷微粉混合均匀；(2.2)制成陶瓷片生坯；(3)逐渐升温对陶瓷片生坯进行干燥与素烧,并在200～600℃的温度区间排蜡；(4)烧结,在1500℃以上温度和热压20MPa的条件下进行烧结处理得到陶瓷片。本发明旨在降低陶瓷片的不良率。(The invention discloses a ceramic wafer processing method and a ceramic wafer, wherein the method comprises the following steps: (1) powder preparation treatment, comprising: (1.1) mixing Al 2 O 3 Pre-sintering the powder at 1350-1500 ℃; (1.2) for Al 2 O 3 Grinding the powder to obtain alumina ceramic micro powder with the granularity of 0.1-9 mu m; (1.3) uniformly mixing a dispersing agent into the alumina ceramic micro powder to weaken aggregates in the alumina ceramic micro powder; (1.4) carrying out particle grading on the alumina ceramic micro powder to ensure that the content of particles with the particle size of less than 1 mu m is less than 40 percent, and the content of particles with the particle size of more than 5 mu m is less than 10 to 15 percent; (2) molding, comprising: (2.1) bonding the adhesiveMixing with plasticizer and alumina ceramic micropowder uniformly; (2.2) preparing a ceramic wafer green body; (3) gradually heating to dry and biscuit the ceramic wafer green body, and removing wax in a temperature range of 200-600 ℃; (4) sintering, and sintering at the temperature of more than 1500 ℃ and under the condition of hot pressing of 20MPa to obtain the ceramic chip. The invention aims to reduce the reject ratio of the ceramic chip.)

1. The ceramic wafer processing method is characterized by comprising the following steps:

(1) powder preparation treatment, comprising:

(1.1) mixing Al₂O₃Pre-sintering the powder at 1350-1500 ℃;

(1.2) for Al₂O₃Grinding the powder to obtain alumina ceramic micro powder with the granularity of 0.1-9 mu m;

(1.3) uniformly mixing a dispersing agent into the alumina ceramic micro powder to weaken aggregates in the alumina ceramic micro powder;

(1.4) carrying out particle grading on the alumina ceramic micro powder to ensure that the content of particles with the particle size of less than 1 mu m is less than 40 percent, and the content of particles with the particle size of more than 5 mu m is less than 10 to 15 percent;

(2) molding, comprising:

(2.1) uniformly mixing an adhesive and a plasticizer with the alumina ceramic micro powder;

(2.2) preparing a ceramic wafer green body by adopting any one of compression molding, isostatic pressing, slip casting, gel injection molding and hot-press casting;

(3) gradually heating to dry and biscuit the ceramic wafer green body, and removing wax in a temperature range of 200-600 ℃;

(4) sintering, and sintering at the temperature of more than 1500 ℃ and under the condition of hot pressing of 20MPa to obtain the ceramic chip.

2. The ceramic wafer processing method according to claim 1, further comprising, after the sintering step:

(5) grinding, comprising:

(5.1) uniformly coating the wax oil after hot melting on a grinding plate with a ceramic plate bonding plane, placing a plurality of ceramic plates on the other flat plate, and pressing the surface of the grinding plate coated with the wax oil to the ceramic plates placed on the flat plate so as to bond a plurality of ceramic plates on the grinding plate;

(5.2) cooling the grinding plate bonded with the ceramic plates so as to enable the ceramic plates to be tightly bonded with the grinding plate respectively;

(5.3) fixing the grinding plate bonded with the ceramic plates to grinding equipment so as to integrally grind the ceramic plates bonded on the same grinding plate.

3. The ceramic wafer processing method according to claim 2, further comprising, after the grinding step:

size correction, polishing and glazing.

4. The ceramic wafer processing method according to claim 1, further comprising, after the sintering step:

and cooling the ceramic wafer to normal temperature.

5. The ceramic wafer machining method according to any one of claims 1 to 4, further comprising:

and packaging and warehousing the finished product.

6. The ceramic sheet processing method according to any of claims 1 to 4, wherein the binder is polyvinyl alcohol and paraffin wax, and the plasticizer is vinyl acetate and hydroxymethyl cellulose.

7. The ceramic sheet processing method according to any one of claims 1 to 4, wherein the alumina ceramic fine powder has a particle size of 0.1 to 1 μm.

8. The ceramic wafer processing method according to any of claims 1 to 4, wherein the pre-sintering temperature is 1400-1450 ℃.

9. Ceramic sheet, characterized in that it is manufactured by a method of processing a ceramic sheet according to any of claims 1 to 8.

Technical Field

The invention relates to the technical field of ceramic processing, in particular to a ceramic wafer processing method and a ceramic wafer obtained by the ceramic wafer processing method.

Background

The ceramic is made of alumina material through the technological processes of proportioning, forming, drying and roasting. The ceramic wafer is a manufactured sheet ceramic device, and in the prior art, the ceramic wafer has pores and more surface defects, so that the ceramic wafer has higher reject ratio.

Disclosure of Invention

The invention mainly aims to provide a ceramic wafer processing method, aiming at reducing the reject ratio of ceramic wafers.

In order to achieve the purpose, the ceramic chip processing method provided by the invention comprises the following steps:

(1) powder preparation treatment, comprising:

(1.1) mixing Al₂O₃Pre-sintering the powder at 1350-1500 ℃;

(1.2) for Al₂O₃Grinding the powder to obtain alumina ceramic micro powder with the granularity of 0.1-9 mu m;

(1.3) uniformly mixing a dispersing agent into the alumina ceramic micro powder to weaken aggregates in the alumina ceramic micro powder;

(1.4) carrying out particle grading on the alumina ceramic micro powder to ensure that the content of particles with the particle size of less than 1 mu m is less than 40 percent, and the content of particles with the particle size of more than 5 mu m is less than 10 to 15 percent;

(2) molding, comprising:

(2.1) uniformly mixing an adhesive and a plasticizer with the alumina ceramic micro powder;

(2.2) preparing a ceramic wafer green body by adopting any one of compression molding, isostatic pressing, slip casting, gel injection molding and hot-press casting;

(3) gradually heating to dry and biscuit the ceramic wafer green body, and removing wax in a temperature range of 200-600 ℃;

(4) sintering, and sintering at the temperature of more than 1500 ℃ and under the condition of hot pressing of 20MPa to obtain the ceramic chip.

Preferably, after the sintering step, the method further comprises:

(5) grinding, comprising:

(5.1) uniformly coating the wax oil after hot melting on a grinding plate with a ceramic plate bonding plane, placing a plurality of ceramic plates on the other flat plate, and pressing the surface of the grinding plate coated with the wax oil to the ceramic plates placed on the flat plate so as to bond a plurality of ceramic plates on the grinding plate;

(5.2) cooling the grinding plate bonded with the ceramic plates so as to enable the ceramic plates to be tightly bonded with the grinding plate respectively;

(5.3) fixing the grinding plate bonded with the ceramic plates to grinding equipment so as to integrally grind the ceramic plates bonded on the same grinding plate.

Preferably, the grinding step is followed by:

size correction, polishing and glazing.

Preferably, the sintering step is followed by:

and cooling the ceramic wafer to normal temperature.

Preferably, the ceramic wafer processing method further comprises:

and packaging and warehousing the finished product.

Preferably, the adhesive is polyvinyl alcohol and paraffin wax, and the plasticizer is vinyl acetate and hydroxymethyl cellulose.

Preferably, the particle size of the alumina ceramic micro powder is 0.1-1 μm.

Preferably, the pre-sintering temperature is 1400-1450 ℃.

In order to achieve the above object, the present invention further provides a ceramic sheet, which is manufactured by the ceramic sheet processing method according to any one of the above aspects.

According to the technical scheme, the pre-sintering temperature of 1350-1500 ℃ is adopted, so that the electrical property of the ceramic is prevented from being reduced due to low temperature, and Al2O3 crystal grains are prevented from abnormally growing, have high hardness, are not easy to crush and are difficult to sinter due to overhigh temperature, so that the ceramic is favorable for forming a uniform structure. The presintered Al2O3 is crushed and ground to obtain superfine Al2O3 powder with high activity, which is beneficial to obtaining fine-grained and high-strength alumina ceramics, the finer the powder particles are, the higher the activity is, the sintering is facilitated, the higher the strength of the prepared ceramic is, the fine powder particles can also disperse stress concentration caused by different phase line expansion coefficients of corundum and glass at a crystal boundary, and the cracking risk is reduced; the fine grains can also hinder the development of microcracks, are not easy to cause crystal penetration fracture, are beneficial to improving fracture toughness and improving wear resistance, so that the alumina ceramic micro powder with the particle size of 0.1-9 mu m is beneficial to improving the surface quality of the ceramic wafer; the ground micro powder is easy to agglomerate due to gravity, adhesion and interparticle acting force, the uniformity of the powder is increased by uniformly mixing the dispersing agent, so that the acting force among the particles is weakened or eliminated, the agglomerates are weakened or eliminated, and the sintering quality is improved. Further, the alumina ceramic micro powder is subjected to particle grading, so that the content of particles with the particle size of less than 1 mu m is less than 40%, and the content of particles with the particle size of more than 5 mu m is less than 10% -15%, therefore, recrystallization caused by excessive fine particles is avoided, the performance of the ceramic wafer is prevented from being reduced by sealing air holes in crystal grains, and difficult sintering caused by excessive coarse particles is avoided. In the drying and biscuit firing processes of the green body, strictly controlling the temperature rise speed, reducing the temperature unevenness to generate thermal stress to cause the green body to crack, particularly slowly raising the temperature in a temperature region of 200-600 ℃ to remove paraffin from the green body, and controlling the temperature rise speed to be not more than 10 ℃/min; the method improves the surface quality of the ceramic wafer and can reduce the cracking probability by controlling the parameters in each step and step, thereby being beneficial to reducing the reject ratio of the ceramic wafer.

Detailed Description

It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.