阅读说明：本技术 拼接式纳米压印模板、其拼接缝的修复方法及其制作方法 (Spliced nano-imprint template, repair method of spliced seam of template and manufacturing method of template ) 是由 路彦辉 李多辉 周雪原 于 2019-11-26 设计创作，主要内容包括：本申请实施例提供了一种拼接式纳米压印模板、其拼接缝的修复方法及其制作方法。该拼接式纳米压印模板的拼接缝的修复方法包括：提供一纳米压印拼接板,纳米压印拼接板包括衬底和位于衬底之上的多个拼接模块,相邻拼接模块之间具有拼接缝,拼接模块包括单元图案；至少在拼接缝处形成修复胶层；对修复胶层进行图形化处理以形成修复模块,修复模块包括单元图案。本实施例能够实现对拼接式纳米压印模板的拼接缝的修复,从而制作出无缝的拼接式纳米压印模板；无缝的拼接式纳米压印模板不仅有利于提升光电器件的质量,而且解决了由于拼接缝而导致的脱模问题。(The embodiment of the application provides a spliced nano-imprint template, a repairing method of a spliced seam of the template, and a manufacturing method of the template. The method for repairing the splicing seam of the splicing type nano-imprint template comprises the following steps: providing a nanoimprint splicing plate, wherein the nanoimprint splicing plate comprises a substrate and a plurality of splicing modules positioned on the substrate, splicing seams are formed between every two adjacent splicing modules, and each splicing module comprises a unit pattern; forming a repair glue layer at least at the splicing seams; and carrying out graphical processing on the repair glue layer to form a repair module, wherein the repair module comprises unit patterns. The embodiment can realize the repair of the splicing seam of the spliced nano-imprint template, thereby manufacturing the seamless spliced nano-imprint template; the seamless splicing type nano-imprint template is not only beneficial to improving the quality of the photoelectric device, but also solves the problem of demoulding caused by splicing seams.)

1. A method for repairing a splicing seam of a splicing type nano-imprint template is characterized by comprising the following steps:

providing a nanoimprint splicing plate, wherein the nanoimprint splicing plate comprises a substrate and a plurality of splicing modules positioned on the substrate, splicing seams are formed between every two adjacent splicing modules, and each splicing module comprises a unit pattern;

forming a repair glue layer at least at the splicing seams;

and carrying out graphical processing on the repair glue layer to form a repair module, wherein the repair module comprises the unit pattern.

2. Repair method according to claim 1, wherein the repair glue layer is an embossed glue layer, the repair glue layer being formed at least at the splicing seams and comprising:

forming an anti-stick layer on the splice module;

and forming a stamping glue layer at the splicing seam by adopting a spraying, printing or spin coating method.

3. The method for repairing the splicing seam of the nano-imprinting template according to claim 2, wherein the step of patterning the repair glue layer to form a repair module comprises:

imprinting the imprinting adhesive layer by adopting an imprinting template, wherein the imprinting template is provided with the unit pattern;

curing the imprinting adhesive layer by taking the boundary of the imprinting template as a boundary;

separating the imprint template from the imprint glue layer to form the repair module.

4. The repair method of any one of claims 2-3, wherein forming an anti-stick layer on the splice module comprises:

and forming the anti-sticking layer on the to-be-processed area of the splicing module by adopting a printing method, wherein the distance between the boundary of the to-be-processed area and the splicing seam is less than 1 micrometer.

5. Repair method according to claim 1, characterized in that the material of the repair glue layer comprises a photoresist, the forming of the repair glue layer at least at the splice seam comprising:

and spraying or printing the photoresist at the splicing seams to form a photoresist layer.

6. The repair method of claim 5, wherein the patterning the repair glue layer to form a repair module comprises:

controlling femtosecond laser to irradiate a preset area of the photoresist layer so as to cure part of the photoresist layer;

removing the uncured photoresist layer to form the repair module.

7. The repair method of claim 6, wherein controlling a femtosecond laser to irradiate a predetermined region of the photoresist layer to cure a portion of the photoresist layer comprises:

and controlling the irradiation position of the femtosecond laser on the photoresist layer in a programming mode so as to cure the photoresist layer in a preset area.

8. Repair method according to any one of the claims 5-7, characterized in that the photoresist is a positive or negative photoresist.

9. Repair method according to any one of the claims 5-7, characterized in that the wavelength of the femtosecond laser is 800 nm.

10. A method of fabricating a nano-imprinting stamp, comprising the method of repairing of any one of claims 1-9, the method of fabricating further comprising:

providing a substrate, wherein the substrate comprises splicing areas and splicing seam areas positioned between the adjacent splicing areas;

forming a plurality of the splicing modules by adopting a nano-imprinting technology;

fixing a plurality of the stitching modules at a stitching region of the substrate to form the nanoimprinted stitching board.

11. The method of manufacturing according to claim 10, further comprising:

and forming a seed layer, wherein the seed layer is positioned on one side of the splicing module and the repairing module, which is far away from the substrate.

12. A tiled nano-imprint template, comprising:

a substrate;

the nano-imprinting structure is positioned on the substrate and comprises a plurality of splicing modules and repairing modules positioned between the adjacent splicing modules, and the splicing modules and the repairing modules respectively comprise unit patterns;

and the seed layer is positioned on one side of the nano-imprinting structure far away from the substrate.

13. The tiled nano-imprinting stamp according to claim 12, wherein the material of the repair module comprises an imprint resist or a photoresist.

Technical Field

The application relates to the technical field of nanoimprint lithography, in particular to a spliced nanoimprint lithography template, a repairing method of a splicing seam of the template and a manufacturing method of the template.

Background

As a novel high-efficiency and high-yield microstructure preparation technology, the nanoimprint technology can prepare micro-scale and nano-scale microstructures and is widely applied to the technical fields of photoelectric devices, semiconductors and the like.

At present, the method for preparing a large-area nano-imprinting template mainly splices a plurality of small-area nano-imprinting templates to form a spliced nano-imprinting template. However, seamless splicing cannot be achieved when the nano-imprint template with a small area is spliced, so that splicing seams usually exist in the spliced nano-imprint template, and the splicing seams are generally in a micron-scale.

The spliced nano-imprinting template has the advantages that due to the structural loss at the splicing seam, the quality of a photoelectric device manufactured by the spliced nano-imprinting template can be reduced, and the problem of demolding is caused due to the fact that partial imprinting glue is easily taken away from the splicing seam during demolding.

Disclosure of Invention

The application provides a splicing type nano-imprinting template, a repairing method of a splicing seam of the splicing type nano-imprinting template and a manufacturing method of the splicing seam of the splicing type nano-imprinting template aiming at the defects of the prior art, and aims to solve the technical problem that the splicing seam exists in the splicing type nano-imprinting template in the prior art.

In a first aspect, the present application provides a repair method for a stitching seam of a stitching type nano-imprint template, where the repair method includes:

providing a nanoimprint splicing plate, wherein the nanoimprint splicing plate comprises a substrate and a plurality of splicing modules positioned on the substrate, splicing seams are formed between every two adjacent splicing modules, and each splicing module comprises a unit pattern;

forming a repair glue layer at least at the splicing seams;

and carrying out graphical processing on the repair glue layer to form a repair module, wherein the repair module comprises the unit pattern.

Optionally, the repair adhesive layer is an embossed adhesive layer, and at least the repair adhesive layer is formed at the splice seam, including:

forming an anti-stick layer on the splice module;

and forming a stamping glue layer at the splicing seam by adopting a spraying, printing or spin coating method.

Optionally, performing a patterning process on the repair glue layer to form a repair module, including:

imprinting the imprinting adhesive layer by adopting an imprinting template, wherein the imprinting template is provided with the unit pattern;

curing the imprinting adhesive layer by taking the boundary of the imprinting template as a boundary;

separating the imprint template from the imprint glue layer to form the repair module.

Optionally, forming an anti-stick layer on the splice module comprises: and forming the anti-sticking layer on the to-be-processed area of the splicing module by adopting a printing method, wherein the distance between the boundary of the to-be-processed area and the splicing seam is less than 1 micrometer.

Optionally, the material of the repair adhesive layer includes a photoresist, and the forming of the repair adhesive layer at least at the splice seam includes: and spraying or printing the photoresist at the splicing seams to form a photoresist layer.

Optionally, performing a patterning process on the repair glue layer to form a repair module, including: controlling femtosecond laser to irradiate a preset area of the photoresist layer so as to cure part of the photoresist layer; removing the uncured photoresist layer to form the repair module.

Optionally, controlling a femtosecond laser to irradiate a preset region of the photoresist layer to cure part of the photoresist layer, including: and controlling the irradiation position of the femtosecond laser on the photoresist layer in a programming mode so as to cure the photoresist layer in a preset area.

Optionally, the photoresist is a positive photoresist or a negative photoresist.

Optionally, the femtosecond laser has a wavelength of 800 nm.

In a second aspect, an embodiment of the present application provides a method for manufacturing a nano-imprint template, which is characterized by including the method for repairing a joint of the spliced nano-imprint template, where the method further includes:

providing a substrate, wherein the substrate comprises splicing areas and splicing seam areas positioned between the adjacent splicing areas;

forming a plurality of the splicing modules by adopting a nano-imprinting technology;

fixing a plurality of the stitching modules at a stitching region of the substrate to form the nanoimprinted stitching board.

Optionally, the manufacturing method further includes: and forming a seed layer, wherein the seed layer is positioned on one side of the splicing module and the repairing module, which is far away from the substrate.

In a third aspect, embodiments of the present application provide a tiled nano-imprint template, including:

a substrate;

the nano-imprinting structure is positioned on the substrate and comprises a plurality of splicing modules and repairing modules positioned between the adjacent splicing modules, and the splicing modules and the repairing modules respectively comprise unit patterns;

and the seed layer is positioned on one side of the nano-imprinting structure far away from the substrate.

Optionally, the material of the repair module comprises an imprint resist or a photoresist.

The technical scheme provided by the embodiment of the application has the following beneficial technical effects:

according to the spliced nano-imprint template, the repairing method of the splicing seam of the spliced nano-imprint template and the manufacturing method of the splicing seam of the spliced nano-imprint template, the repairing module is formed by forming the repairing adhesive layer at the splicing seam and performing imaging processing on the repairing adhesive layer, and both the repairing module and the splicing module comprise unit patterns, so that repairing of the splicing seam of the spliced nano-imprint template is realized, and a seamless spliced nano-imprint template can be manufactured; the seamless splicing type nano-imprint template is not only beneficial to improving the quality of the photoelectric device, but also solves the problem of demoulding caused by splicing seams.

Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.

Drawings

The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a schematic flow chart of a repair method for a stitching seam of a stitching type nano-imprint template according to an embodiment of the present application;

FIG. 2 is a process flow diagram of step S1 in the repair method for the stitching seam of the stitching type nano-imprinting template shown in FIG. 1;

FIG. 3 is a process flow diagram of step S2 in the repair method for the stitching seam of the stitching type nano-imprinting template shown in FIG. 1;

FIG. 4 is a process flow diagram of step S3 in the repair method for the stitching seam of the stitching type nano-imprinting template shown in FIG. 1;

FIG. 5 is a schematic flow chart of step S2 in the repair method for the stitching seam of the stitching type nano-imprinting template shown in FIG. 1;

FIG. 6 is a process flow diagram of step S201 in the method for repairing the joint seam of the spliced nano-imprint template shown in FIG. 5;

FIG. 7 is a process flow diagram of step S202 in the method for repairing the joint seam of the spliced nano-imprinting template shown in FIG. 5;

fig. 8 is a schematic flow chart of step S3 in the repair method for the stitching seam of the stitching type nano-imprinting template shown in fig. 1;

FIG. 9 is a process flow diagram of step S301 in the method for repairing the joint seam of the spliced nano-imprinting template shown in FIG. 8;

FIG. 10 is a process flow diagram of step S302 in the method for repairing the joint seam of the spliced nano-imprinting template shown in FIG. 8;

fig. 11 is a process flow diagram of step S303 of the method for repairing the joint of the splicing type nano-imprint template shown in fig. 8;

FIG. 12 is another process flow diagram of step S303 of the method for repairing the joint of the splicing type nano-imprinting template shown in FIG. 8;

fig. 13 is another schematic flow chart of step S3 in the method for repairing the joint of the spliced nano-imprinting stamp shown in fig. 1;

FIG. 14 is a process flow chart of step S301' in the method for repairing the joint of the splicing type nano-imprinting template shown in FIG. 13;

FIG. 15 is a process flow diagram of one of the steps S302' in the method for repairing the joint of the splicing type nano-imprinting template shown in FIG. 13;

fig. 16 is a schematic flow chart of a method for manufacturing a tiled nano-imprint template according to an embodiment of the present application;

fig. 17 is a schematic structural diagram of a spliced nano-imprinting template according to an embodiment of the present application.

Reference numerals:

1-a substrate; 2-nanoimprint structures; 21-a splicing module; 22-a repair module; 3-a seed layer;

a-a unit pattern; c, splicing seams; f-an anti-sticking layer; g-repairing the glue layer; g1-imprint glue layer; g2-photoresist layer.

Detailed Description

Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.

It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.

The inventor of the application considers that the existing splicing type nano-imprinting template usually has a micron-sized splicing seam, and the splicing type nano-imprinting template can reduce the quality of a photoelectric device made of the splicing type nano-imprinting template due to the structural loss of the splicing seam, and on the other hand, the splicing seam is easy to take away partial imprinting glue to cause a demolding problem during demolding.

The application provides a splicing type nano-imprinting splicing plate, a manufacturing method thereof and a repairing method of a splicing seam, and aims to solve the technical problems in the prior art.

The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.

The embodiment provides a method for repairing a splicing seam of a splicing type nano-imprint template, please refer to fig. 1, and the method comprises the following steps:

s1: as shown in fig. 2, a nanoimprinted tile is provided, the nanoimprinted tile comprising a substrate 1 and a plurality of tile modules 21 positioned on the substrate 1, with a tile seam C between adjacent tile modules 21, the tile modules 21 comprising a unit pattern a. It should be noted that the pattern of the mosaic module 21 described in this application is composed of the unit pattern a, and taking the mosaic module 21 shown in fig. 2 as an example, the mosaic module 21 includes a plurality of repeated unit patterns a. The unit pattern a described in the present application includes a protrusion height, a groove depth, a distance between adjacent protrusions, a distance between adjacent grooves, and the like.

S2: as shown in fig. 3, a repair glue layer G is formed at least at the splice seam C.

S3: as shown in fig. 4, the repair glue layer G is patterned to form a repair module 22, and the repair module 22 includes a unit pattern a.

In the embodiment, the repair adhesive layer is formed at the splicing seam and is subjected to graphical processing to form the repair module, and the repair module 22 and the splicing module 21 both comprise the unit pattern A, so that the splicing seam of the spliced nano-imprint template is repaired, and the seamless spliced nano-imprint template can be manufactured; the seamless splicing type nano-imprint template is not only beneficial to improving the quality of the photoelectric device, but also solves the problem of demoulding caused by splicing seams.

Optionally, the embodiment provides another method for repairing the splicing seam of the spliced nano-imprint template. Referring to fig. 5, in the repairing adhesive layer of the present embodiment, in the repairing method provided in the present embodiment, step S2 includes:

s201: as shown in fig. 6, an anti-stick layer F is formed on the mosaic module 21. Specifically, the printing method is adopted to form the anti-sticking layer F on the splicing module 21, and in order to prevent the material of the anti-sticking layer F from not covering the splicing seam C, the printing method can be adopted to form the anti-sticking layer F on the region to be processed of the splicing module 21, and the distance between the boundary of the region to be processed and the splicing seam C is less than 1 micrometer. The material of the anti-sticking layer F includes a fluorine-containing silane compound.

S202: as shown in fig. 7, an imprinting adhesive layer G1 is formed at the splicing seam C by spraying, printing or spin coating. Since the anti-sticking layer F is formed on the splicing module 21, the imprinting adhesive cannot adhere to the anti-sticking layer F, and therefore, the imprinting adhesive layer G1 can be formed only at the splicing seam C regardless of the spraying, printing or spin coating method.

In this embodiment, the anti-adhesion layer F is formed on the splicing module 21, so that the imprinting adhesive layer G1 is formed only at the splicing seam C, which is beneficial to flexibly selecting a method for forming the imprinting adhesive layer G.

Further, the present embodiment provides a repair method for a splice seam of a spliced nano-imprint template, as shown in fig. 8, in the repair method provided in the present embodiment, step S3 includes:

s301: as shown in fig. 9, the imprint gel layer G1 is imprinted using an imprint template M having a cell pattern. Specifically, the imprint template M may be an imprint template for making the mosaic module 21.

S302: as shown in fig. 10, the curing process is performed on the imprint glue layer G1 with the boundary of the imprint template M as a boundary. Specifically, ultraviolet light curing may be employed, and thermal curing may also be employed.

S303: as shown in fig. 11, the imprint template M is separated from the imprint gel layer G1 to form the repair module 22.

In the repairing method provided by the embodiment, the spliced seam C is repaired by adopting a nanoimprint technology, the repairing method is simple, and the spliced seam C can be repaired without newly adding equipment and an imprint template.

Further, as shown in fig. 12, when there is a certain distance between the boundary of the region to be processed and the splice seam C, an embossed adhesive layer may also be formed in the region of the splicing module 21 not covered by the anti-adhesion layer F, and therefore, although the position of the embossed adhesive layer formed on the splicing module 21, i.e., the region B in the dotted circle in fig. 12, can also form a unit pattern after the embossing process, there is a step difference between the unit pattern in the region B and the unit patterns in the other positions. When the spliced nano-imprinting template is applied to imprinting a part to be imprinted, the influence of the section difference on the imprinting precision can be accepted, and especially when the part to be imprinted adopts a flexible substrate, the section difference has almost no influence on the imprinting precision.

Optionally, this embodiment provides a method for repairing a joint of a stitching type nano-imprint template, please refer to fig. 13, in the repairing method provided in this embodiment, step S3 includes:

s301': as shown in fig. 14, the femtosecond Laser is controlled to irradiate a predetermined region of the photoresist layer G2 to cure a portion of the photoresist layer G2. Specifically, the wavelength of the femtosecond laser is 800 nm; the femtosecond Laser can be controlled to irradiate a predetermined region on the photoresist layer G2 in a programmed manner to cure a portion of the photoresist layer G2.

S302': as shown in fig. 15, the uncured photoresist layer G2 is removed to form the repair module 22. Specifically, the material of the photoresist layer G2 includes a positive photoresist or a negative photoresist, and when the material of the photoresist layer G2 includes a positive photoresist, since the solubility of the positive photoresist in a solvent rises under irradiation of the femtosecond Laser, the position requiring irradiation of the femtosecond Laser is the position of the photoresist layer G2 that needs to be removed; when the material of the photoresist layer G2 includes a negative photoresist, since the negative photoresist is cured by the irradiation of the femtosecond Laser, the position requiring the irradiation of the femtosecond Laser is the position of the photoresist layer G2 to be reserved.

It should be noted that the two-photon polymerization technique provided in this embodiment is used to realize the patterning of the photoresist layer G2 at the splice joint C, and an anti-adhesion layer does not need to be manufactured, and the step S2 specifically includes: a photoresist layer G2 is formed at the splice C by spraying or printing.

In the embodiment, the patterning of the photoresist layer G2 at the splicing seam C is realized by using a two-photon polymerization technique (i.e., femtosecond laser), because the field intensity of the femtosecond laser is gaussian distributed, the curing of the photoresist layer G2 has a specific energy threshold, although the laser is focused to a micron-sized spot, the energy of the edge area of the spot is not enough to reach the threshold for curing the photoresist material, and only the energy density within a diameter range of tens of nanometers at the focus can reach the threshold required for curing the photoresist material, so the processing precision can reach tens of nanometers, and the repair module 22 at the splicing seam C has higher precision.

Based on the same inventive concept, the embodiment provides a manufacturing method of a nano-imprint template, which comprises a repairing method of a splicing seam of the spliced nano-imprint template in the embodiment. Referring to fig. 16, the manufacturing method provided in this embodiment further includes:

b1: a substrate is provided that includes splice regions and splice seam regions between adjacent splice regions.

B2: and forming a plurality of splicing modules by adopting a nano-imprinting technology.

B3: a plurality of stitching modules are secured to the stitching region of the substrate to form a nanoimprinted stitching board.

It should be noted that, in this embodiment, the order of step B1 and step B2 may be changed, that is, a plurality of splice modules may be formed first and then the substrate may be provided.

In this embodiment, the plurality of splicing modules are fixed on the substrate to form the nanoimprint splicing plate, and the spliced seam is repaired, so that the beneficial effects of the method for repairing the spliced seam of the spliced nanoimprint template in the above embodiment are not described herein again.

Optionally, the manufacturing method provided by this embodiment further includes: as shown in fig. 17, the seed layer 3 is formed, and the seed layer 3 is located on the side of the splicing module 21 and the repair module 22 away from the substrate 1. Specifically, the material of the seed layer 3 includes relatively stable metals such as nickel, copper, etc., and a nickel layer or a copper layer may be formed as the seed layer 3 on the surfaces of the splicing module 21 and the repairing module 22 away from the substrate 1 by electroplating.

Based on the same inventive concept, the present embodiment provides a spliced nano-imprinting stamp, as shown in fig. 17, including a substrate 1, a nano-imprinting structure 2, and a seed layer 3.

The nanoimprint structure 2, located on the substrate 1, includes a plurality of mosaic modules 21 and repair modules 22 located between adjacent mosaic modules 21, and each of the mosaic modules 21 and the repair modules 22 includes a unit pattern a. Specifically, the material of the repair module 22 includes an imprint resist or a photoresist, which is a positive photoresist or a negative photoresist.

A seed layer 3 on a side of the nanoimprint structures 2 remote from the substrate 1. Specifically, the material of the seed layer 3 includes nickel.

The concatenation formula nanometer impression template that this embodiment provided is filled by repair module 22 between the concatenation module 21, and concatenation seam C department is filled by repair module 22 promptly for concatenation formula nanometer impression module does not have the structure disappearance, consequently, concatenation formula nanometer impression template not only can realize the advantage of large tracts of land, easy drawing of patterns, and the photoelectric device that adopts the concatenation formula nanometer impression template preparation that this embodiment provided has better performance moreover.

By applying the embodiment of the application, at least the following beneficial effects can be realized:

according to the spliced nano-imprint template, the repairing method of the splicing seam of the spliced nano-imprint template and the manufacturing method of the splicing seam of the spliced nano-imprint template, the repairing module is formed by forming the repairing adhesive layer at the splicing seam and performing imaging processing on the repairing adhesive layer, and both the repairing module and the splicing module comprise unit patterns, so that repairing of the splicing seam of the spliced nano-imprint template is realized, and a seamless spliced nano-imprint template can be manufactured; the seamless splicing type nano-imprint template is not only beneficial to improving the quality of the photoelectric device, but also solves the problem of demoulding caused by splicing seams.

Those of skill in the art will appreciate that the various operations, methods, steps in the processes, acts, or solutions discussed in this application can be interchanged, modified, combined, or eliminated. Further, other steps, measures, or schemes in various operations, methods, or flows that have been discussed in this application can be alternated, altered, rearranged, broken down, combined, or deleted. Further, steps, measures, schemes in the prior art having various operations, methods, procedures disclosed in the present application may also be alternated, modified, rearranged, decomposed, combined, or deleted.

In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.

The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and may be performed in other orders unless explicitly stated herein. Moreover, at least a portion of the steps in the flow chart of the figure may include multiple sub-steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed alternately or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.