阅读说明：本技术 双向电子开关及其控制方法、计算机可读存储介质 (Bidirectional electronic switch, control method thereof, and computer-readable storage medium ) 是由 李稳根 廖晓斌 于 2019-11-29 设计创作，主要内容包括：本发明涉及一种双向电子开关及其控制方法、计算机可读存储介质，用于使双向电子开关能快速切换能量方向。其中双向电子开关包括主回路、可控硅支路、反向电压生成支路，可控硅支路并联反向电压生成支路后串联于主回路中；可控硅支路设有相互并联的正向支路与反向支路，正向支路具有沿同一导通方向串联的可控硅Ty1，反向支路具有相反导通方向串联的可控硅Ty2；反向电压生成支路设有串联于反向电压生成支路中的H桥正负电压生成电路，H桥正负电压生成电路具有储能电容C2和依次串联形成回路的开关管QB1、开关管QB2、开关管QB3、开关管QB4，储能电容C2一端连接开关管QB1与开关管QB2之间的接点，另一端连接开关管QB3与开关管QB4之间的接点。(The invention relates to a bidirectional electronic switch, a control method thereof and a computer readable storage medium, which are used for enabling the bidirectional electronic switch to rapidly switch energy directions. The bidirectional electronic switch comprises a main loop, a silicon controlled branch and a reverse voltage generating branch, wherein the silicon controlled branch is connected in parallel with the reverse voltage generating branch and then is connected in series in the main loop; the thyristor branch circuit is provided with a forward branch circuit and a reverse branch circuit which are mutually connected in parallel, the forward branch circuit is provided with thyristors Ty1 which are connected in series along the same conduction direction, and the reverse branch circuit is provided with thyristors Ty2 which are connected in series in the opposite conduction direction; the reverse voltage generation branch is provided with an H bridge positive and negative voltage generation circuit connected in series in the reverse voltage generation branch, the H bridge positive and negative voltage generation circuit is provided with an energy storage capacitor C2 and a switch tube QB1, a switch tube QB2, a switch tube QB3 and a switch tube QB4 which are sequentially connected in series to form a loop, one end of the energy storage capacitor C2 is connected with a contact between the switch tube QB1 and the switch tube QB2, and the other end of the energy storage capacitor C2 is connected with a contact between the switch tube QB3 and the switch tube QB 4.)

1. A bi-directional electronic switch, comprising:

the thyristor branch circuit is connected in parallel with the reverse voltage generation branch circuit and then connected in series in the main circuit;

the thyristor branch circuit is provided with a forward branch circuit and a reverse branch circuit which are connected in series with the thyristor branch circuit after being connected in parallel, the forward branch circuit is provided with at least one thyristor Ty1 which is connected in series with the forward branch circuit along the same conduction direction, and the reverse branch circuit is provided with at least one thyristor Ty2 which is connected in series with the reverse branch circuit in the opposite conduction direction;

the reverse voltage generation branch is provided with an H-bridge positive and negative voltage generation circuit, the H-bridge positive and negative voltage generation circuit is provided with an energy storage capacitor C2 and a switch tube QB1, a switch tube QB2, a switch tube QB3 and a switch tube QB4 which are sequentially connected in series to form a loop, one end of the energy storage capacitor C2 is connected with a contact between a switch tube QB1 and a switch tube QB2, the other end of the energy storage capacitor C2 is connected with a contact between the switch tube QB3 and a switch tube QB4, and the contact between the switch tube QB1 and the switch tube QB3 and the contact between the switch tube QB2 and the switch tube QB4 are respectively connected with the reverse voltage generation branch so that the H-bridge positive and negative voltage generation circuit are connected.

2. The switch of claim 1, wherein: the reverse voltage generation branch is also provided with a bidirectional switch circuit, the bidirectional switch circuit is provided with a capacitor C1 and a switch tube QA1, a diode D1, a diode D2 and a switch tube QA2 which are sequentially connected in series to form a loop, the cathodes of the diode D1 and the diode D2 in the loop are oppositely arranged, one end of the capacitor C1 is connected with a connection point between the diode D1 and the diode D2, the other end of the capacitor C1 is connected with a connection point between the switch tube QA1 and the switch tube QA2, and the connection point between the switch tube QA1 and the diode D1 and the connection point between the diode D2 and the switch tube QA2 are respectively connected with the reverse voltage generation branch so that the bidirectional switch circuit is connected in series in the.

3. The switch of claim 2, wherein: the bidirectional switch circuit has a plurality of switches, each of which is connected in series.

4. The switch of claim 2, wherein: each switch tube is connected with an RCD absorption circuit in parallel.

5. The switch of claim 1, wherein: the main loop is connected in series with a filter inductor L1 and a filter inductor L2, and the silicon controlled rectifier branch is located between the filter inductor L1 and the filter inductor L2.

6. The switch of any one of claims 1-5, wherein: the switch tubes are all IEGT tubes.

7. A method of controlling a bidirectional electronic switch as recited in any of claims 1 to 5, comprising:

s101, collecting current parameters on a main loop to compare the current parameters with a first overcurrent threshold;

and S102, at the moment t1 when the current parameter exceeds the first overcurrent threshold, the thyristor branch is turned off, and the reverse voltage generation branch is controlled to be conducted to generate a voltage reverse to the voltage at the moment t1 to be applied to the thyristor branch.

8. The method according to claim 7, further comprising step S103, executed after step S102: and continuously monitoring the current of the silicon controlled rectifier branch circuit, and when the current is reduced to zero, turning off the reverse voltage generation branch circuit so as to enable the current of the main loop to start to drop.

9. The method according to claim 8, further comprising a step S104 performed after step S103:

continuously monitoring the current of the main loop, and conducting a reverse voltage generation branch circuit when the current is reduced to zero;

during the conduction period of the reverse voltage generation branch, acquiring the current parameter of the main loop in real time to compare with a second overcurrent threshold;

and if the current parameter exceeds a second overcurrent threshold value, immediately switching off the reverse voltage generation branch and executing system reset, otherwise, switching on the silicon controlled rectifier branch again, and switching off the reverse voltage generation branch after the silicon controlled rectifier branch is switched on.

10. The method of claim 9, wherein the second over-current threshold is less than the first over-current threshold.

11. Method according to claim 7 or 9, characterized in that the current parameter is in particular a current value and/or a current rate of change.

12. A computer readable storage medium, wherein the computer readable storage medium stores one or more programs which, when executed by a controller, implement the method of any of claims 7-11.

Technical Field

The invention relates to a bidirectional electronic switch, a control method thereof and a computer readable storage medium.

Background

The existing bidirectional electronic switch is basically as shown in document 200710019429.5, and a bridge circuit is formed by high-power thyristors, and energy bidirectional flow is realized by controlling the conduction direction of the bridge circuit.

Disclosure of Invention

The invention aims to enable a bidirectional electronic switch to rapidly switch energy directions.

To this end, a two-way electronic switch is provided,

the thyristor branch circuit is connected in parallel with the reverse voltage generation branch circuit and then connected in series in the main circuit;

the thyristor branch circuit is provided with a forward branch circuit and a reverse branch circuit which are connected in series with the thyristor branch circuit after being connected in parallel, the forward branch circuit is provided with at least one thyristor Ty1 which is connected in series with the forward branch circuit along the same conduction direction, and the reverse branch circuit is provided with at least one thyristor Ty2 which is connected in series with the reverse branch circuit in the opposite conduction direction;

the reverse voltage generation branch is provided with an H-bridge positive and negative voltage generation circuit, the H-bridge positive and negative voltage generation circuit is provided with an energy storage capacitor C2 and a switch tube QB1, a switch tube QB2, a switch tube QB3 and a switch tube QB4 which are sequentially connected in series to form a loop, one end of the energy storage capacitor C2 is connected with a contact between a switch tube QB1 and a switch tube QB2, the other end of the energy storage capacitor C2 is connected with a contact between the switch tube QB3 and a switch tube QB4, and the contact between the switch tube QB1 and the switch tube QB3 and the contact between the switch tube QB2 and the switch tube QB4 are respectively connected with the reverse voltage generation branch so that the H-bridge positive and negative voltage generation circuit are connected.

Furthermore, the reverse voltage generation branch is also provided with a bidirectional switch circuit, the bidirectional switch circuit is provided with a capacitor C1 and a switch tube QA1, a diode D1, a diode D2 and a switch tube QA2 which are sequentially connected in series to form a loop, the cathodes of the diode D1 and the diode D2 in the loop are oppositely arranged, one end of the capacitor C1 is connected with a joint between the diode D1 and the diode D2, the other end of the capacitor C1 is connected with a joint between the switch tube QA1 and the switch tube QA2, and the joint between the switch tube QA1 and the diode D1 and the joint between the diode D2 and the switch tube QA2 are respectively connected with the reverse voltage generation branch so that the bidirectional switch circuit is connected in series in the reverse voltage generation branch.

Further, the bidirectional switch circuit has a plurality of switches, each of which is connected in series in turn.

Further, each switch tube is connected with an RCD absorption circuit in parallel.

Furthermore, the main loop is connected in series with a filter inductor L1 and a filter inductor L2, and the thyristor branch is located between the filter inductor L1 and the filter inductor L2.

Further, the switch tubes are all IEGT tubes.

There is also provided a method of controlling a bidirectional electronic switch, comprising:

s101, collecting current parameters on a main loop to compare the current parameters with a first overcurrent threshold;

and S102, at the moment t1 when the current parameter exceeds the first overcurrent threshold, the thyristor branch is turned off, and the reverse voltage generation branch is controlled to be conducted to generate a voltage reverse to the voltage at the moment t1 to be applied to the thyristor branch.

Further, step S103 executed after step S102 is also included: and continuously monitoring the current of the silicon controlled rectifier branch circuit, and when the current is reduced to zero, turning off the reverse voltage generation branch circuit so as to enable the current of the main loop to start to drop.

Further, step S104 executed after step S103 is also included:

continuously monitoring the current of the main loop, and conducting a reverse voltage generation branch circuit when the current is reduced to zero;

during the conduction period of the reverse voltage generation branch, acquiring the current parameter of the main loop in real time to compare with a second overcurrent threshold;

and if the current parameter exceeds a second overcurrent threshold value, immediately switching off the reverse voltage generation branch and executing system reset, otherwise, switching on the silicon controlled rectifier branch again, and switching off the reverse voltage generation branch after the silicon controlled rectifier branch is switched on.

Further, the second overcurrent threshold is smaller than the first overcurrent threshold.

Further, the current parameter is in particular a current value and/or a current rate of change.

A computer-readable storage medium is also provided, wherein the computer-readable storage medium stores one or more programs which, when executed by a controller, implement the above-described method.

Has the advantages that:

when the energy on the thyristor branch flows in the forward direction and the Ty1 needs to be quickly turned off, the QB1 and the QB4 can be turned on, the QB2 and the QB3 are turned off, and the reverse voltage generation branch generates a reverse voltage to be applied to the thyristor Ty1 which is being turned on, so that the turn-off of the thyristor is accelerated;

similarly, when the energy on the thyristor branch flows reversely and the Ty2 needs to be turned off rapidly, QB1 and QB4 can be turned off, QB2 and QB3 are turned on, so that the reverse voltage generation branch generates a forward voltage to be applied to the thyristor Ty2 which is being turned on, and the turn-off of the thyristor is accelerated.

The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:

FIG. 1 shows a circuit schematic of the bidirectional electronic switch of the present invention;

FIG. 2 shows a circuit schematic of the bi-directional switching circuit of the present invention;

FIG. 3 shows a circuit schematic of the H-bridge positive and negative voltage generation circuit of the present invention;

FIG. 4 illustrates the control flow of the bi-directional electronic switch of the present invention;

FIG. 5 illustrates the over-threshold trigger logic of the present invention;

FIG. 6 shows a schematic structural diagram of an electronic device of the present invention;

fig. 7 shows a schematic structural diagram of a computer-readable storage medium of the present invention.

Detailed Description

Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

The bidirectional electronic switch of the embodiment is suitable for high-power scenes such as 10kV/5000A, and mainly comprises an input end Vin +, an output end Vout-, a filter inductor L1, a filter inductor L2, a silicon controlled rectifier branch circuit 2 and a reverse voltage generation branch circuit 3 as shown in FIG. 1.

The input terminal Vin + is connected in series with the filter inductor L1 and the filter inductor L2 in turn and then connected to the output terminal Vout ", thereby forming the main loop 1.

The thyristor branch circuit 2 is connected in series with the main loop 1 between the filter inductor L1 and the filter inductor L2 and consists of eight thyristors with 8500V voltage level, wherein four thyristors are connected in series along the same conduction direction to form a forward branch circuit 21, the other four thyristors are connected in series along the opposite conduction direction to form a reverse branch circuit 22, and the reverse branch circuit 22 is connected in parallel with the forward branch circuit 11 to form the thyristor branch circuit 2.

For simplicity of illustration, only one thyristor in the forward branch is shown in fig. 1, and the thyristor in the reverse branch is also shown as Ty1, and the thyristor in the forward branch is also shown as Ty 2.

The working process of the controlled silicon branch circuit 2 is as follows: when Ty1 is switched on and Ty2 is switched off, energy flows in the positive direction; when Ty1 is turned off and Ty2 is turned on, energy flows in the reverse direction.

In order to deal with the scene that the energy direction needs to be switched rapidly at extreme, a reverse voltage generation branch circuit 3 is arranged to apply reverse cut-off voltage to the silicon controlled rectifier branch circuit 2, so that the silicon controlled rectifier on the silicon controlled rectifier branch circuit 2 can be switched off rapidly.

Specifically, the reverse voltage generating branch 3 is formed by connecting 4 bidirectional switch circuits 31 and an H-bridge positive and negative voltage generating circuit 32 in series, so as to satisfy the voltage class requirement, wherein, for simplifying the illustration, only one bidirectional switch circuit 31 is shown in fig. 1.

Referring to fig. 2, the bidirectional switch circuit 31 is composed of a capacitor C1, two diodes D1, D2, and two IEGT tubes QA1, QA2 with a voltage level of 4500V, wherein the IEGT tube QA1, the diode D1, the diode D2, and the IEGT tube QA2 are sequentially connected in series to form a loop, the diode D1 and the cathode of the diode D2 are disposed in the loop in an opposite manner, one end of the capacitor C1 is connected to a junction between the diode D1 and the diode D2, and the other end is connected to a junction between the IEGT tube QA1 and the IEGT tube QA 2.

The junction between the IEGT tube QA1 and the diode D1 and the junction between the diode D2 and the IEGT tube QA2 are connected as input and output terminals of the bidirectional switch circuit 31 in series with other circuits in the reverse voltage generating branch 3.

The operation process of the bidirectional switch circuit 31 is as follows: turning off QA1 and turning on QA2, energy flows in the forward direction; turning on QA1 and turning off QA2, energy flows in reverse.

Further, since the IEGT transistors generate voltage spikes during the switching process, a conventional RCD absorption circuit not shown in the figure is connected in parallel to each IEGT transistor to absorb the voltage spikes, so as to ensure the safety and reliability of the IEGT.

Referring to fig. 3, the H-bridge positive and negative voltage generating circuit 32 is composed of an energy storage capacitor C2, four IEGT tubes QB1, QB2, QB3 and QB4, wherein the IEGT tubes QB1, QB2, QB3 and QB4 are sequentially connected in series to form a loop, one end of the energy storage capacitor C2 is connected to a junction between the IEGT tubes QB1 and QB2, and the other end of the energy storage capacitor C2 is connected to a junction between the IEGT tubes QB3 and QB 4.

The junction between IEGT pipe QB1 and IEGT pipe QB3 and the junction between IEGT pipe QB2 and IEGT pipe QB4 are connected as input and output terminals of the H-bridge positive and negative voltage generating circuit 32 in series with the other circuits in the reverse voltage generating branch 3.

The working process of the H-bridge positive and negative voltage generating circuit 32 is: only the IEGT pipe QB1 and the IEGT pipe QB4 are opened, the energy storage capacitor C2 generates reverse voltage, and energy reversely flows; only the IEGT tube QB2 and the IEGT tube QB3 are opened, the energy storage capacitor C2 generates forward voltage, and energy flows in the forward direction.

Referring to fig. 1, the reverse voltage generation branch 3 drives the thyristor branch 2 as follows:

when the energy on the thyristor branch flows in the forward direction and the Ty1 needs to be quickly turned off, QA1, QB1 and QB4 can be turned on, QA2, QB2 and QB3 are turned off, so that the reverse voltage generation branch generates a reverse voltage to be applied to the thyristor Ty1 which is being turned on, and the turn-off of the thyristor Ty1 is accelerated;

similarly, when the energy on the thyristor branch circuit flows reversely and the Ty2 needs to be turned off rapidly, QA1, QB1 and QB4 can be turned off, QA2, QB2 and QB3 are turned on, so that the reverse voltage generation branch circuit generates a forward voltage to be applied to the thyristor Ty2 which is being turned on, and the turn-off of the thyristor Ty is accelerated.

In order to realize the driving of the bidirectional electronic switch, the embodiment is further provided with a conventional IEGT driving circuit, a current sensor, a voltage sensor, a temperature sensor and a controller which are not shown in the figure, wherein the controller drives each thyristor and the IEGT tube through the IEGT driving circuit to realize the on/off of the IEGT tube. The current sensor, the voltage sensor and the temperature sensor form a group and are provided with a plurality of groups, each group is respectively arranged on the main loop 1, the silicon controlled branch 2 and the reverse voltage generating branch 3 and is used for respectively collecting parameters such as current, voltage, temperature and the like of the three lines, and each sensor is respectively electrically connected with the controller to realize parameter transmission.

The controller adopts a high-speed DSP control chip, the model is TMS320C6455, 1GHz main frequency, the operation speed is high, and quick response and protection under extreme conditions can be guaranteed.

Because the bidirectional electronic switch is applied to high-power occasions, in order to avoid electric shock risks existing in near-earth control, the controller is externally connected with a remote upper computer through 485/LAN, a user can remotely operate the bidirectional electronic switch on the upper computer and simultaneously monitor working states of current, voltage, temperature and the like on the bidirectional electronic switch.

The control logic of the bidirectional electronic switch of the present embodiment is shown in fig. 4, and includes the following implementation steps executed in sequence:

and S101, when the circuit works normally, the controller detects the current value I on the main loop 1 in real time, compares the current value I with a preset first overcurrent threshold value, and generates a trigger signal when the current value I passes the threshold, such as at a time t1 in fig. 5.

Step S102, at the moment of generating the trigger signal, the controller firstly ensures that the thyristor control signal is closed to cut off the thyristor branch circuit 2, then judges the current direction, and switches on the reverse voltage generation branch circuit 3 at the moment of t2, and simultaneously controls the H-bridge positive and negative voltage generation circuit 32 to generate the voltage reverse to the moment of t1, and the bidirectional switch circuit 31 correspondingly controls the energy flowing direction, so that the reverse cut-off voltage is applied to the thyristor on the thyristor branch circuit 2 to accelerate the cut-off of the thyristor.

After the reverse voltage generating branch 3 is turned on at time t2, as shown in fig. 5, the current of the main circuit 1 (i.e. curve L1) continues to rise, and the current of the thyristor branch 2 (i.e. curve L2) gradually transfers to the reverse voltage generating branch 3, so that the current of the reverse voltage generating branch 3 (i.e. curve L3) climbs.

Step s103, after the reverse voltage generating branch 3 is turned on, the controller continuously monitors the current of the thyristor branch 2, and when the current decreases to zero at time t3 in fig. 5, the controller can turn off the IEGT tube and the H-bridge of the reverse voltage generating branch 3 after a short delay, and at time t4, the IEGT tube and the H-bridge are completely turned off, and the current of the main loop 1 starts to decrease.

The above steps are referred to as a primary shutdown operation, and after the primary shutdown operation, the following steps are performed to realize a secondary shutdown operation. The secondary turn-off operation is used for realizing the function of trying to recover and continuously protecting the bidirectional electronic switch when a system false short circuit or a recoverable short circuit phenomenon occurs.

The system refers to a whole formed by combining the controller, the driving circuit, the sensor, the upper computer and the bidirectional electronic switch together in the embodiment.

And S104, after the primary turn-off operation, the controller continuously monitors the current of the main loop 1, and when the current is reduced to zero, the controller tries a recovery action, namely temporarily switches on the reverse voltage generation branch 3 and monitors the current of the main loop 1 in real time.

And S105, comparing the current value I on the main loop 1 with a preset second overcurrent threshold value within a short time after the reverse voltage generation branch 3 is conducted, if the current value I exceeds the threshold value again, immediately turning off the reverse voltage generation branch 3 by the controller, executing system reset, and not attempting recovery action before the system reset.

It should be noted that, in order to ensure the safety when the bidirectional electronic switch is restored, the current threshold value of the secondary over-threshold detection is lower than the current threshold value during normal operation, i.e. the second over-current threshold value is smaller than the first over-current threshold value, in consideration of hardware delay.

Within a short time after the reverse voltage generation branch 3 is conducted, if the current value I is not beyond the threshold, the controller conducts the thyristor branch 2 again and continuously monitors each current, and after the thyristor branch 2 is normally conducted, the reverse voltage generation branch 3 is closed, and then the step S101 is returned to enter the threshold-crossing detection state again.

It should be noted that:

in the control logic of the present embodiment, the current value I may be replaced by other current parameters such as the current change rate di/dt;

the IEGT transistors in the reverse voltage generating branch 3 may be replaced by other switching transistors;

the bidirectional electronic switch is provided with a conventional overcurrent protection circuit, an overvoltage protection circuit, an over-temperature protection circuit and the like, and is the prior art, so that the details are not repeated herein;

the bidirectional electronic switch is arranged in a box body designed by adopting a standard screen cabinet, the total size of the box body 2708 2438 is 2591 (length, width and height), the interior of the box body is designed by adopting a modularized drawer type structure to divide the space into a control chamber and a high-pressure chamber, a 7U standard case is arranged in the control chamber, logic control devices such as a controller and the like are concealed in the 7U standard case, and the high-pressure chamber is separated by high-pressure glass fibers to realize the flame-retardant and explosion-proof functions.

The method of the present embodiment may be implemented by a method that is converted into program steps and apparatuses that can be stored in a computer storage medium and invoked and executed by a controller.

The algorithms and displays presented herein are not inherently related to any particular computer, virtual machine, or other apparatus. Various general purpose devices may be used with the teachings herein. The required structure for constructing such a device will be apparent from the description above. Moreover, the present invention is not directed to any particular programming language. It is appreciated that a variety of programming languages may be used to implement the teachings of the present invention as described herein, and any descriptions of specific languages are provided above to disclose the best mode of the invention.

In the description provided herein, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.

Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that the invention as claimed requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.

Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.

Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments.

The various component embodiments of the invention may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof. It will be appreciated by those skilled in the art that a microprocessor or Digital Signal Processor (DSP) may be used in practice to implement some or all of the functions of some or all of the components of the apparatus for detecting a wearing state of an electronic device according to embodiments of the present invention. The present invention may also be embodied as apparatus or device programs (e.g., computer programs and computer program products) for performing a portion or all of the methods described herein. Such programs implementing the present invention may be stored on computer-readable media or may be in the form of one or more signals. Such a signal may be downloaded from an internet website or provided on a carrier signal or in any other form.

For example, fig. 6 shows a schematic structural diagram of an electronic device according to an embodiment of the invention. The electronic device conventionally comprises a processor 61 and a memory 62 arranged to store computer executable instructions (program code). The memory 62 may be an electronic memory such as a flash memory, an EEPROM (electrically erasable programmable read only memory), an EPROM, a hard disk, or a ROM. The memory 62 has a storage space 63 storing program code 64 for performing any of the method steps in the embodiments. For example, the storage space 63 for the program code may comprise respective program codes 64 for implementing respective steps in the above method. The program code can be read from or written to one or more computer program products. These computer program products comprise a program code carrier such as a hard disk, a Compact Disc (CD), a memory card or a floppy disk. Such a computer program product is typically a computer readable storage medium such as described in fig. 7. The computer readable storage medium may have memory segments, memory spaces, etc. arranged similarly to the memory 62 in the electronic device of fig. 6. The program code may be compressed, for example, in a suitable form. In general, the memory unit stores program code 71 for performing the steps of the method according to the invention, i.e. program code readable by a processor such as 61, which when run by an electronic device causes the electronic device to perform the individual steps of the method described above.

It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.