Magnetic field sensing device
阅读说明:本技术 磁场感测装置 (Magnetic field sensing device ) 是由 袁辅德 于 2019-07-24 设计创作,主要内容包括:本发明提供一种磁场感测装置,包括至少一漩涡型磁电阻及至少一磁化设定元件。漩涡型磁电阻包括钉扎层、受钉扎层、间隔层及圆形自由层。受钉扎层配置于钉扎层上,间隔层配置于受钉扎层上,而圆形自由层配置于间隔层上,且具有漩涡形磁化方向分布。磁化设定元件交替地通电与不通电,当磁化设定元件不通电时,圆形自由层的漩涡形磁化方向分布随着外在磁场而变化,以达到对外在磁场的感测。当磁化设定元件通电时,磁化设定元件所产生的磁场破坏了圆形自由层的漩涡形磁化方向分布,并使圆形自由层达到磁饱和。(The invention provides a magnetic field sensing device, which comprises at least one vortex type magneto resistor and at least one magnetization setting element. The vortex magnetoresistance includes a pinned layer, a spacer layer, and a circular free layer. The pinned layer is set on the pinned layer, the spacer layer is set on the pinned layer, and the circular free layer is set on the spacer layer and has vortex-shaped magnetization direction distribution. The magnetization setting element is alternately electrified and not electrified, and when the magnetization setting element is not electrified, the spiral magnetization direction distribution of the circular free layer changes along with the external magnetic field so as to achieve the sensing of the external magnetic field. When the magnetization setting element is energized, the magnetic field generated by the magnetization setting element destroys the distribution of the spiral magnetization directions of the circular free layer and causes the circular free layer to reach magnetic saturation.)
1. A magnetic field sensing device, comprising:
at least one vortex-type magnetoresistance, comprising:
a pinning layer;
a pinned layer disposed on the pinning layer;
a spacer layer disposed on the pinned layer; and
a circular free layer disposed on the spacer layer and having a distribution of swirl magnetization directions; and
at least one magnetization setting element, configured on one side of the vortex-type magnetoresistance, wherein the at least one magnetization setting element is alternately electrified and not electrified, and when the at least one magnetization setting element is not electrified, the vortex-shaped magnetization direction distribution of the circular free layer changes along with an external magnetic field, so as to achieve the sensing of the external magnetic field; when the at least one magnetization setting element is electrified, the magnetic field generated by the at least one magnetization setting element destroys the spiral magnetization direction distribution of the circular free layer, and the circular free layer is enabled to reach magnetic saturation.
2. The magnetic field sensing device of claim 1, further comprising:
a substrate, wherein the magnetization setting element is disposed on the substrate;
a first insulating layer covering the magnetization setting element, wherein the vortex-type magnetoresistance is disposed on the first insulating layer; and
and the second insulating layer covers the vortex-type magneto resistor.
3. The magnetic field sensing device of claim 1, further comprising:
a substrate, wherein the vortex-type magnetoresistance is disposed on the substrate;
a first insulating layer covering the vortex magnetoresistance, wherein the magnetization setting element is disposed on the first insulating layer; and
a second insulating layer covering the magnetization setting element.
4. The magnetic field sensing device according to claim 1, wherein the at least one magnetization setting element comprises a first magnetization setting element and a second magnetization setting element, the magnetic field sensing device further comprising:
a substrate, wherein the first magnetization setting element is disposed on the substrate;
a first insulating layer covering the first magnetization setting element, wherein the vortex-type magnetoresistance is disposed on the first insulating layer;
a second insulating layer covering the vortex-type magnetoresistance, wherein the second magnetization setting element is disposed on the second insulating layer; and
a third insulating layer covering the second magnetization setting element.
5. The magnetic field sensing device according to claim 1, wherein the at least one vortex-type magnetoresistance is a plurality of vortex-type magnetoresistance electrically connected as a wheatstone bridge, the wheatstone bridge outputting a differential signal corresponding to the external magnetic field when the plurality of vortex-type magnetoresistance are in a state of sensing the external magnetic field.
6. The magnetic field sensing device according to claim 5, wherein the Wheatstone bridge is electrically connected to an operator, the Wheatstone bridge outputting a null signal when the plurality of vortex magnetoresistors are in a state in which the circular free layer thereof is in magnetic saturation, the operator being configured to subtract the null signal from the differential signal corresponding to the external magnetic field to obtain a net output signal.
7. The magnetic field sensing device according to claim 5, wherein the plurality of vortex-type magnetoresistances include a first vortex-type magnetoresistance, a second vortex-type magnetoresistance, a third vortex-type magnetoresistance, and a fourth vortex-type magnetoresistance, the first vortex-type magnetoresistance is electrically connected to the third vortex-type magnetoresistance and the fourth vortex-type magnetoresistance, the second vortex-type magnetoresistance is electrically connected to the third vortex-type magnetoresistance and the fourth vortex-type magnetoresistance, a pinning direction of the first vortex-type magnetoresistance is the same as a pinning direction of the second vortex-type magnetoresistance, the pinning direction of the third vortex-type magnetoresistance is the same as a pinning direction of the fourth vortex-type magnetoresistance, and the pinning direction of the first vortex-type magnetoresistance is opposite to the pinning direction of the third vortex-type magnetoresistance.
8. The magnetic field sensing device according to claim 7, wherein a direction of a magnetic field generated at the first to fourth vortex type magnetoresistance when the at least one magnetization setting element is energized is perpendicular to a pinning direction of the first to fourth vortex type magnetoresistance.
9. The magnetic field sensing device according to claim 1, wherein the spacer layer is a non-magnetic metal layer and the swirl magnetoresistance is a giant magnetoresistance.
10. The magnetic field sensing device according to claim 1, wherein the spacer layer is an insulating layer and the vortex magnetoresistance is a tunneling magnetoresistance.
11. The magnetic field sensing device according to claim 1, wherein the at least one magnetization-setting element is a conductive sheet, coil, wire, or conductor.
Technical Field
The present invention relates to a magnetic field sensing device.
Background
Magnetic field sensors are an important component that can provide electronic compass and motion tracking for the system. In recent years, related applications have rapidly developed, particularly for portable devices. In new generation applications, high accuracy, fast response, small size, low power consumption and reliable quality have become important features of magnetic field sensors.
In a conventional giant magnetoresistance or tunneling magnetoresistance sensor, there is a structure in which a pinned layer (pinning layer), a pinned layer (pinned layer), a spacer layer (spacer layer), and a free layer (free layer) are sequentially stacked, wherein the free layer has a magnetization easy axis (magnetic easy-axis) perpendicular to a pinning direction of the pinned layer. If one wants to construct a single-axis magnetic sensor with a wheatstone bridge, multiple magnetoresistors with different pinning directions are important. For a 3-axis magnetic sensor, a plurality of magnetoresistors each having 6 pinning directions are required. However, from a manufacturing standpoint, fabricating the second pinning direction in the pinned layer in one wafer can result in a significant cost increase and can reduce the stability of the magnetization orientation configuration in the pinned layer.
In addition, flicker noise (pink noise) exists in the output signal of a typical magnetic field sensor, which affects the accuracy of the magnetic field measured by the magnetic field sensor.
Disclosure of Invention
The invention provides a magnetic field sensing device which can effectively overcome the interference of flicker noise.
An embodiment of the invention provides a magnetic field sensing device, which includes at least one vortex-type magnetoresistance (vortex magnetoresistance) and at least one magnetization setting element (magnetization setting element). The at least one vortex magnetoresistance includes a pinned layer, a spacer layer, and a circular free layer. The pinned layer is set on the pinned layer, the spacer layer is set on the pinned layer, and the circular free layer is set on the spacer layer and has vortex-shaped magnetization direction distribution. The at least one magnetization setting element is disposed on one side of the at least one vortex-type magnetoresistance, and the at least one magnetization setting element is alternately energized and de-energized, when the at least one magnetization setting element is not energized, the vortex-shaped magnetization direction distribution of the circular free layer changes with an external magnetic field, so as to achieve sensing of the external magnetic field. When the at least one magnetization setting element is energized, the magnetic field generated by the at least one magnetization setting element destroys the spiral magnetization direction distribution of the circular free layer and causes the circular free layer to reach magnetic saturation.
In an embodiment of the invention, the magnetic field sensing device further includes a substrate, a first insulating layer and a second insulating layer. The magnetization setting element is disposed on the substrate, and the first insulating layer covers the magnetization setting element, wherein the vortex-type magnetoresistance is disposed on the first insulating layer. The second insulating layer covers the vortex-type magnetoresistance.
In an embodiment of the invention, the magnetic field sensing device further includes a substrate, a first insulating layer and a second insulating layer. The vortex-type magnetoresistance is disposed on the substrate, and the first insulating layer covers the vortex-type magnetoresistance, wherein the magnetization setting element is disposed on the first insulating layer. A second insulating layer covers the magnetization setting element.
In an embodiment of the invention, the at least one magnetization setting element includes a first magnetization setting element and a second magnetization setting element, and the magnetic field sensing device further includes a substrate, a first insulating layer, a second insulating layer, and a third insulating layer. The first magnetization setting element is disposed on the substrate, and the first insulating layer covers the first magnetization setting element, wherein the vortex magnetoresistance is disposed on the first insulating layer. The second insulation layer covers the vortex magnetoresistance, wherein the second magnetization setting element is configured on the second insulation layer. A third insulating layer overlies the second magnetization setting element.
In an embodiment of the invention, the at least one vortex type magnetic resistor is a plurality of vortex type magnetic resistors electrically connected to form a wheatstone bridge. When these vortex-type magnetoresistors are in a state of sensing an external magnetic field, the wheatstone bridge outputs a differential signal corresponding to the external magnetic field.
In an embodiment of the invention, the wheatstone bridge is electrically connected to the operator. When these vortex-type magnetoresistors are in a state where their circular free layers are in magnetic saturation, the wheatstone bridge outputs a null signal. The arithmetic unit is used for subtracting the null signal from the differential signal corresponding to the external magnetic field to obtain a net output signal.
In an embodiment of the invention, the vortex magnetoresistance include a first vortex magnetoresistance, a second vortex magnetoresistance, a third vortex magnetoresistance, and a fourth vortex magnetoresistance. First vortex type magnetism resistance electric property is connected to third vortex type magnetism resistance and fourth vortex type magnetism resistance, second vortex type magnetism resistance electric property is connected to third vortex type magnetism resistance and fourth vortex type magnetism resistance, the pinning direction of first vortex type magnetism resistance is the same as the pinning direction of second vortex type magnetism resistance, the pinning direction of third vortex type magnetism resistance is the same as the pinning direction of fourth vortex type magnetism resistance, and the pinning direction of first vortex type magnetism resistance is opposite to the pinning direction of third vortex type magnetism resistance.
In an embodiment of the invention, a direction of a magnetic field generated at the first to fourth vortex magnetoresistance when the at least one magnetization setting element is energized is perpendicular to a pinning direction of the first to fourth vortex magnetoresistance.
In an embodiment of the invention, the spacer layer is a nonmagnetic metal layer, and the vortex magnetoresistance is a giant magnetoresistance.
In an embodiment of the invention, the spacer layer is an insulating layer, and the vortex magnetoresistance is a tunneling magnetoresistance.
In an embodiment of the present invention, the at least one magnetization setting element is a conductive sheet, a conductive coil, a conductive wire or a conductor.
In the magnetic field sensing device of the embodiment of the invention, since the circular free layer having the swirl magnetization direction distribution is used, the external magnetic field direction that can be sensed by the swirl magnetoresistance is less restricted. In addition, in the magnetic field sensing device according to the embodiment of the present invention, since the magnetization setting element capable of breaking the distribution of the spiral magnetization directions of the circular free layer is employed to measure the flicker noise existing in the magnetic field sensing device itself, the magnetic field sensing device according to the embodiment of the present invention can effectively overcome the interference of the flicker noise.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 is a cross-sectional view of a magnetic field sensing device according to an embodiment of the present invention;
FIG. 2 is a schematic top view of the vortex-type magnetoresistive and magnetization setting element of FIG. 1;
FIG. 3 is a schematic perspective view of the vortex-type magnetoresistance of FIG. 1;
FIGS. 4A to 4D respectively show the change of four magnetization direction distributions of the circular free layer in FIG. 3 by external magnetic fields in four different directions;
FIG. 5 shows the resistance value variation of the vortex-type magnetoresistance of FIG. 3 under the influence of external magnetic fields in different directions and in the absence of external magnetic fields;
FIGS. 6A to 6D show the directions of the saturation magnetization amounts generated by the vortex-type magnetoresistors of FIGS. 1 and 2 after receiving a magnetic field applied by a magnetization setting element;
FIG. 7 shows a switching curve for the vortex-type magnetoresistance of FIG. 1;
FIG. 8 is a schematic top view of a magnetic field sensing device according to an embodiment of the present invention;
FIG. 9 is a schematic waveform diagram of the output signal of the Wheatstone bridge of FIG. 8;
FIG. 10 is a cross-sectional view of a magnetic field sensing device according to another embodiment of the present invention;
fig. 11 is a schematic cross-sectional view of a magnetic field sensing device according to another embodiment of the invention.
The reference numbers illustrate:
100. 100a, 100 b: magnetic field sensing device
110: magnetization setting element
1101: first magnetization setting element
1102: second magnetization setting element
120: substrate
130: a first insulating layer
140: a second insulating layer
150: a third insulating layer
160: arithmetic unit
200: vortex type magneto resistor
210: pinning layer
220: pinned layer
230: spacer layer
240: circular free layer
D1: a first direction
D2: second direction
D3: third direction
H: external magnetic field
I: electric current
ML: direction of magnetization
P1: pinning direction
Q1, Q2, Q3, Q4: contact point
R: resistance value
R1: first vortex type magnetoresistance
R2: second vortex type magnetoresistance
R3: third vortex type magnetoresistance
R4: fourth vortex type magneto resistor
VC: center of vortex
Detailed Description
Fig. 1 is a cross-sectional schematic view of a magnetic field sensing device according to an embodiment of the invention, fig. 2 is a top view of the vortex-type magnetoresistance and magnetization setting element in fig. 1, and fig. 3 is a perspective schematic view of the vortex-type magnetoresistance in fig. 1. Referring to fig. 1 to fig. 3, a magnetic
In the present embodiment, the magnetic
The circular
In the present embodiment, the
The at least one
The at least one
Specifically, referring to fig. 4A, when an external magnetic field H along the first direction D1 passes through the
Referring to fig. 4B, when an external magnetic field H along the opposite direction of the first direction D1 passes through the
Referring to fig. 4C, when an external magnetic field H along the second direction D2 passes through the
Referring to fig. 4D, when an external magnetic field H in the opposite direction of the second direction D2 passes through the
Fig. 5 shows changes in resistance values of the vortex-type magnetoresistance of fig. 3 under the influence of external magnetic fields in different directions and in the absence of the external magnetic fields. Referring to fig. 3, fig. 4A to fig. 4D and fig. 5, the graph in fig. 5 shows the variation of the resistance R of the
Fig. 6A to 6D show directions of saturation magnetization amounts generated by the eddy-type magnetoresistance of fig. 1 and 2 after receiving a magnetic field applied by a magnetization setting element. Referring to fig. 1, fig. 2 and fig. 6A, when a current I flowing in the second direction D2 is applied to the
Referring to fig. 1, fig. 2 and fig. 6B again, when the current I flowing in the
Referring to fig. 1, fig. 2 and fig. 6C again, when the extending direction of the
Referring to fig. 1, fig. 2 and fig. 6D again, when the extending direction of the
When the
In the present embodiment, the magnetic
Fig. 7 shows the transfer curve of the vortex-type magnetoresistance (transfer curve) of fig. 1. Referring to fig. 1, 2, 3 and 7, when a positive external magnetic field H or a negative external magnetic field H in the opposite direction of the pinning direction P1 is applied to the
When the absolute value of the external magnetic field H decreases from the above saturation point (i.e. from H)anInitially decrease or start from-HanAt the beginning of the increase), the
Thus, the
Fig. 8 is a schematic top view of a magnetic field sensing device according to an embodiment of the invention. Referring to fig. 1, 2, 3 and 8, in fig. 1, 2 and 3, a vortex-
Specifically, the first vortex type magnetoresistance R1 is electrically connected to the third vortex type magnetoresistance R3 and the fourth vortex type magnetoresistance R4, and the second vortex type magnetoresistance R2 is electrically connected to the third vortex type magnetoresistance R3 and the fourth vortex type magnetoresistance R4. In addition, the pinning direction P1 of the first vortex type magnetoresistance R1 is the same as the pinning direction P1 of the second vortex type magnetoresistance R2, and both are oriented to the second direction D2. The pinning direction P1 of the third vortex type magnetoresistance R3 is the same as the pinning direction P1 of the fourth vortex type magnetoresistance R4, which are all opposite to the second direction D2. In addition, the pinning direction P1 of the first vortex magnetoresistance R1 is opposite to the pinning direction P1 of the third vortex magnetoresistance R3.
When the external magnetic field has a magnetic field component in the second direction D2, the resistance value of the first vortex magnetoresistance R1 changes by- Δ R, and the resistance value of the second vortex magnetoresistance R2 changes by- Δ R. In addition, since the pinning direction P1 of the third magnetoresistance R3 and the fourth magnetoresistance R4 is opposite to the second direction D2, the resistance value of the third magnetoresistance R3 changes by + Δ R, and the resistance value of the fourth magnetoresistance R4 changes by + Δ R. Thus, when the node Q1 receives a reference voltage VDD and the node Q2 is coupled to ground (ground), the voltage difference between the node Q3 and the node Q4 is (VDD) × (Δ R/R), which can be an output signal, and the output signal is a differential signal, wherein the magnitude of the output signal corresponds to the magnitude of the magnetic field component of the external magnetic field in the second direction D2. The node Q1 is coupled to the conductive path between the first vortex type resistor R1 and the fourth vortex type resistor R4, the node Q2 is coupled to the conductive path between the second vortex type resistor R2 and the third vortex type resistor R3, the node Q3 is coupled to the conductive path between the first vortex type resistor R1 and the third vortex type resistor R3, and the node Q4 is coupled to the conductive path between the second vortex type resistor R2 and the fourth vortex type resistor R4.
In the present embodiment, the wheatstone bridge is electrically connected to an
Fig. 9 is a schematic waveform diagram of an output signal of the wheatstone bridge of fig. 8. Referring to fig. 8 and 9, when the wheatstone bridge is alternately switched between the sensing state (i.e. when the
Fig. 10 is a schematic cross-sectional view of a magnetic field sensing device according to another embodiment of the invention. Referring to fig. 10, the magnetic
Fig. 11 is a schematic cross-sectional view of a magnetic field sensing device according to another embodiment of the invention. Referring to fig. 10, the magnetic
In summary, in the magnetic field sensing device according to the embodiment of the invention, since the circular free layer having the vortex-shaped magnetization direction distribution is adopted, the external magnetic field direction that can be sensed by the vortex-type magnetoresistance is less limited. In addition, in the magnetic field sensing device according to the embodiment of the present invention, since the magnetization setting element capable of breaking the distribution of the spiral magnetization directions of the circular free layer is employed to measure the flicker noise existing in the magnetic field sensing device itself, the magnetic field sensing device according to the embodiment of the present invention can effectively overcome the interference of the flicker noise.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
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