Large-size silicon wafer thinning device and thinning process thereof
阅读说明:本技术 一种大尺寸硅圆片减薄装置及其减薄工艺 (Large-size silicon wafer thinning device and thinning process thereof ) 是由 裴坤羽 祝斌 刘蛟龙 武卫 孙晨光 刘建伟 王聚安 由佰玲 刘园 谢艳 杨春雪 于 2019-11-19 设计创作,主要内容包括:本发明提供一种大尺寸硅圆片减薄装置,包括用于放置硅圆片的载体座、用于放置左砂轮的左砂轮座以及用于放置右砂轮的右砂轮座,所述载体座、所述左砂轮座和所述右砂轮座同轴设置,所述左砂轮座和所述右砂轮座对称设置在所述载体座两侧且与所述载体座并行设置。本发明还提出一种大尺寸硅圆片减薄工艺。本发明尤其是适用于对尺寸直径为280-320mm的硅圆片进行立式双面减薄,结构设计合理且简单,不仅可对硅圆片两侧面同时同步进行磨削,而且各结构配合可控,拆装保养简单,省时省力,保证硅圆片双面减薄的平整度和稳定性,提升工作效率。(The invention provides a large-size silicon wafer thinning device which comprises a carrier seat for placing a silicon wafer, a left grinding wheel seat for placing a left grinding wheel and a right grinding wheel seat for placing a right grinding wheel, wherein the carrier seat, the left grinding wheel seat and the right grinding wheel seat are coaxially arranged, and the left grinding wheel seat and the right grinding wheel seat are symmetrically arranged on two sides of the carrier seat and are arranged in parallel with the carrier seat. The invention also provides a large-size silicon wafer thinning process. The vertical double-side thinning machine is particularly suitable for vertical double-side thinning of silicon wafers with the size diameter of 280-320mm, has reasonable and simple structural design, can simultaneously and synchronously grind the two side surfaces of the silicon wafers, has controllable matching of all structures, is simple to disassemble, assemble and maintain, saves time and labor, ensures the flatness and stability of double-side thinning of the silicon wafers, and improves the working efficiency.)
1. The utility model provides a jumbo size silicon disk attenuate device, its characterized in that, including the carrier seat that is used for placing the silicon disk, be used for placing left emery wheel's left emery wheel seat and be used for placing right emery wheel's right emery wheel seat, the carrier seat the left emery wheel seat with right emery wheel seat coaxial setting, the left side emery wheel seat with right emery wheel seat symmetry sets up carrier seat both sides and with the parallel setting of carrier seat.
2. The large-size silicon wafer thinning device as claimed in claim 1, wherein the carrier base, the left grinding wheel base and the right grinding wheel base are all of circular structure and have the same diameter; the carrier seat is vertically placed.
3. A large-size silicon wafer thinning device as claimed in claim 1 or 2, wherein a placing hole matched with the diameter of the silicon wafer is arranged on the inner side of the carrier seat, a V-shaped boss is arranged at any position of the edge of the placing hole, and the top end of the V-shaped boss is arranged towards the center of the placing hole.
4. The large-size silicon wafer thinning device as claimed in claim 3, wherein the carrier seat is provided with a deep inwardly-directed stepped groove on a side close to the left grinding wheel seat, and an internal gear on a side close to the right grinding wheel seat, and the stepped groove and the internal gear are symmetrically arranged relative to the placing hole.
5. The large-size silicon wafer thinning device as recited in claim 4, wherein the left wheel base comprises a first left disc and a second left disc coaxially arranged, and the first left disc is arranged far away from the carrier base; the left grinding wheel is arranged on one side, far away from the first left disc, of the second left disc.
6. The large-size silicon wafer thinning device as recited in claim 5, wherein the right grinding wheel base comprises a first right disk and a second right disk which are coaxially arranged, and the first right disk is arranged far away from the carrier base; the right grinding wheel is arranged on one side, far away from the first right disc, of the second right disc; and an external gear meshed with the external gear is arranged on the second right disc, and the external gear and the right gear are coaxially arranged.
7. A large size silicon wafer thinning apparatus as claimed in any one of claims 4 to 6 wherein the second left disc outer diameter and the second right disc outer diameter are both adapted to the placement hole inner diameter.
8. A process for thinning large-size silicon wafers, which comprises the use of the thinning apparatus according to any one of claims 1 to 7, and comprises the following steps: s1: carrying out coarse grinding and thinning on the silicon wafer; s2: step thinning is carried out on the silicon wafer; s3: finely grinding and thinning the silicon wafer; in the thinning process, the left grinding wheel seat and the right grinding wheel seat synchronously rotate at the same speed in the reverse direction, and the carrier seat and the right grinding wheel seat rotate in the same direction.
9. The large-size silicon wafer thinning process as claimed in claim 8, wherein the step S2 includes a first stage thinning and a second stage thinning, and the feeding speed of the left grinding wheel and the right grinding wheel in the first stage thinning is greater than that in the second stage thinning.
10. The process of claim 9, wherein the rotation speed of the silicon wafer is constant during the thinning process.
Technical Field
The invention belongs to the technical field of semiconductor monocrystalline silicon grinding, and particularly relates to a large-size silicon wafer thinning device and a thinning process thereof.
Background
The existing silicon wafer gradually develops large-size and thin-slice development, and the conventional small-size silicon wafer has two types of chemical thinning and mechanical thinning. The chemical thinning is to thin the silicon wafer by reacting with the surface layer of the silicon wafer by using a chemical reagent. For large-size silicon wafers, the required chemical reagent tank is limited in size due to large size and area, and the silicon wafers stacked with each other cannot be completely corroded by the chemical reagent, so that uneven thinning is easily caused, and the yield is low. The mechanical thinning is to polish the surface of the silicon wafer by using a grinding wheel, one surface of the silicon wafer is usually polished by using a single grinding wheel, and the other surface of the silicon wafer is processed after the silicon wafer is turned over; for a large-size silicon wafer, the thinning mode has long single-side processing time, cannot ensure the consistency of geometric parameters of two sides, has low productivity and unstable surface quality of a product, and cannot meet the existing production requirement.
Disclosure of Invention
The invention provides a large-size silicon wafer thinning device and a thinning process thereof, which are particularly suitable for a silicon wafer with the size diameter of 280-320mm, and solve the technical problems of inconsistent geometric parameters of two sides of the thinned silicon wafer, unstable surface quality and low production efficiency caused by unreasonable thinning structure design in the prior production technology.
In order to solve the technical problems, the invention adopts the technical scheme that:
the utility model provides a jumbo size silicon disk attenuate device, is including the carrier seat that is used for placing the silicon disk, the left wheel base that is used for placing left emery wheel and the right wheel base that is used for placing right emery wheel, the carrier seat the left side wheel base with right wheel base coaxial setting, the left side wheel base with right wheel base symmetry sets up carrier seat both sides and with the parallel setting of carrier seat.
Furthermore, the carrier seat, the left grinding wheel seat and the right grinding wheel seat are all of circular structures and have the same diameter; the carrier seat is vertically placed.
Further, a placing hole matched with the diameter of the silicon wafer is formed in the inner side of the carrier seat, a V-shaped boss is arranged at any position of the edge of the placing hole, and the top end of the V-shaped boss faces the center of the placing hole.
Further, the carrier seat is close to left side emery wheel seat one side is equipped with inwards along dark ladder groove, is close to right side emery wheel seat one side is equipped with the internal gear, the ladder groove with the internal gear for place the hole symmetry and set up.
Further, the left grinding wheel seat comprises a first left disc and a second left disc which are coaxially arranged, and the first left disc is far away from the carrier seat; the left grinding wheel is arranged on one side, far away from the first left disc, of the second left disc.
Further, the right grinding wheel seat comprises a first right disc and a second right disc which are coaxially arranged, and the first right disc is far away from the carrier seat; the right grinding wheel is arranged on one side, far away from the first right disc, of the second right disc; and an external gear meshed with the external gear is arranged on the second right disc, and the external gear and the right gear are coaxially arranged.
Further, the second left disc outer diameter and the second right disc outer diameter are both matched with the placing hole inner diameter.
A large-size silicon wafer thinning process comprises the step of adopting the thinning device, and the step comprises the following steps: s1: carrying out coarse grinding and thinning on the silicon wafer; s2: step thinning is carried out on the silicon wafer; s3: finely grinding and thinning the silicon wafer; in the thinning process, the left grinding wheel seat and the right grinding wheel seat synchronously rotate at the same speed in the reverse direction, and the carrier seat and the right grinding wheel seat rotate in the same direction.
Further, the step S2 includes a first stage thinning and a second stage thinning, and the feed rate of the left grinding wheel and the right grinding wheel in the first stage thinning is greater than the feed rate in the second stage thinning.
Furthermore, the rotating speed of the silicon wafer is always unchanged in the thinning process.
The large-size silicon wafer thinning device and the thinning process designed by the invention are used for synchronously grinding and thinning the vertical double surfaces of the large-size silicon wafer, have reasonable and simple structural design, can synchronously grind the two side surfaces of the silicon wafer at the same time, are simple in disassembly and maintenance, save time and labor, do not need other auxiliary devices, have good consistency of geometric parameters of the double surfaces of the processed silicon wafer, and have stable process, high production efficiency and high yield. The silicon wafer obtained by using the thinning device has uniform and consistent thinning thickness on two sides, good surface evenness, stable thinning processing process and high working efficiency.
Drawings
FIG. 1 is a schematic structural diagram of a large-sized silicon wafer according to an embodiment of the present invention;
FIG. 2 is an enlarged view of A in accordance with one embodiment of the present invention;
FIG. 3 is an exploded view of an apparatus for thinning large-sized silicon wafers according to an embodiment of the present invention;
FIG. 4 is a perspective view of a carrier mount according to one embodiment of the invention;
FIG. 5 is a top view of one embodiment of the present invention with the carrier seat adjacent the left grinding wheel side;
FIG. 6 is a top view of the carrier housing adjacent the right grinding wheel in accordance with one embodiment of the present invention;
FIG. 7 is a perspective view of a left wheel head of an embodiment of the present invention;
FIG. 8 is a top view of a left wheel head of an embodiment of the present invention;
FIG. 9 is a perspective view of a right wheel head of an embodiment of the present invention;
fig. 10 is a top view of a right wheel head according to an embodiment of the present invention.
In the figure:
10.
21. Placing
24.
32. A second
40. A right
43.
50. Left grinding
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The invention provides a large-size silicon wafer, as shown in figure 1, a
Further, as shown in fig. 2, the vertex angle of the V-
In the present embodiment, the
A large-size silicon wafer thinning device is shown in figure 3 and comprises a
As shown in fig. 4-6, the
Furthermore, the vertex angle of the V-
As shown in fig. 5 to 6, the
As shown in fig. 7, the
As shown in fig. 8, a
As shown in fig. 9, the
The working process of the embodiment: the silicon wafer 10 is placed in the placing hole 21 in the carrier seat 20, the left grinding wheel seat 30 drives the left grinding wheel 50 to contact with the left side surface of the silicon wafer 10, the right grinding wheel seat 40 drives the right grinding wheel 60 to contact with the right side surface of the silicon wafer 10, and meanwhile, the external gear 45 arranged on the right grinding wheel seat 40 is meshed with the internal gear 23 on the carrier seat 20; the left grinding wheel seat 30 and the right grinding wheel seat 40 reversely and synchronously rotate, so that the left grinding wheel 50 and the right grinding wheel 60 reversely and synchronously rotate, the right grinding wheel seat 40 is meshed with the inner gear 23 through the outer gear 45 to drive the carrier seat 20 and the right grinding wheel seat 40 to rotate in the same direction, namely the silicon wafer 10 and the right grinding wheel 60 rotate in the same direction, and the left grinding wheel 50 reversely rotates relative to the silicon wafer 10; the left grinding wheel seat 30 and the right grinding wheel seat 40 respectively drive the left grinding wheel 50 and the right grinding wheel 60 to rotate and feed, and the silicon wafer 10 is ground synchronously at the same side, so that the two sides of the silicon wafer 10 are synchronously thinned, the thickness grinding of the two sides of the silicon wafer 10 is uniform, the consistency of the thinned thickness is ensured, and compared with the prior art, the thinning efficiency is improved, the grinding quality of the two sides is also ensured, the yield is improved, and the production cost is reduced.
A large-size silicon wafer thinning process adopts the thinning device, and comprises the following steps:
s1: roughly grinding and thinning the
s2: step thinning is carried out on the
s3: finely grinding and thinning the
in the thinning process, the left
Specifically, in the fine grinding and thinning process of S1, the thickness of the
In the step thinning process of S2, the step thinning process includes a first stage thinning and a second stage thinning, the first stage thinning is a transitional thinning, the first stage thinning is thicker than the second stage thinning, and the feeding speed of the
In the finish grinding thinning process of S3, grinding thinning is continued on the basis of the stepped thinning, in the process, the rotating speed of the
In this embodiment, the rotation speed of the
Taking a sample wafer of a
In the coarse grinding and thinning process of S1, the rotation speeds of the
In the step thinning process of S2, the rotating speed of the
In the fine grinding and thinning process of S3, the rotating speeds of the
Finally, the
The large-size silicon wafer designed by the invention is characterized in that the V-shaped groove with an angle of 89-95 degrees is arranged on the outer circumference of the silicon wafer, the depth of the V-shaped groove is 1-1.5mm, preferably, the vertex angle of the V-shaped groove is 90 degrees, the depth is 1.25mm, and the V-shaped groove structure is arranged at any intersection point of four ridge lines of the silicon round bar and the silicon wafer, so that the whole use of the silicon wafer is not influenced, the large-size silicon wafer is convenient to be matched and fixed with a thinning device, and the silicon wafer can be prevented from cracking or breaking.
The large-size silicon wafer thinning device and the thinning process designed by the invention are used for synchronously grinding and thinning the vertical double surfaces of the large-size silicon wafer, have reasonable and simple structural design, can synchronously grind the two side surfaces of the silicon wafer at the same time, are simple in disassembly and maintenance, save time and labor, do not need other auxiliary devices, have good consistency of geometric parameters of the double surfaces of the processed silicon wafer, and have stable process, high production efficiency and high yield. The silicon wafer obtained by using the thinning device has uniform and consistent thinning thickness on two sides, good surface evenness, stable thinning processing process and high working efficiency.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
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