Scintillator panel, radiation imaging apparatus, and method for manufacturing scintillator panel

文档序号：1493593 发布日期：2020-02-04 浏览：19次中文

阅读说明：本技术 闪烁体板、放射线成像装置和闪烁体板的制造方法 (Scintillator panel, radiation imaging apparatus, and method for manufacturing scintillator panel ) 是由大池智之于 2018-04-27 设计创作，主要内容包括：本发明提供闪烁体板,该闪烁体板在基板的表面上设置有闪烁体,该闪烁体具有面向该表面的第一面和在该第一面的相反侧的第二面。该闪烁体包括多个针状晶体,每个针状晶体含有作为基材的卤化碱金属化合物、作为活化剂的碘化铊、和作为添加元素的铜和银中的至少一者,在该第二面中以不小于0.04mol％且不大于0.5mol％的浓度含有该添加元素,该添加元素在该第一面中的浓度高于在该第二面中的浓度,并且每个针状晶体的与该表面平行的面中的最大部分的厚度成为该针状晶体的从该第一面至该第二面的方向上10μm的高度处的与该表面平行的面中的厚度的1倍以上且9倍以下。(The present invention provides a scintillator panel in which a scintillator is provided on a surface of a substrate, the scintillator having a first surface facing the surface and a second surface opposite to the first surface. The scintillator includes a plurality of needle-like crystals each containing an alkali halide compound as a base, thallium iodide as an activator, and at least one of copper and silver as an additive element, the additive element being contained in the second face at a concentration of not less than 0.04 mol% and not more than 0.5 mol%, the concentration of the additive element being higher in the first face than in the second face, and a thickness of a largest portion of faces of each needle-like crystal parallel to the surface becoming 1 time or more and 9 times or less of a thickness in a face parallel to the surface at a height of 10 μm in a direction from the first face to the second face of the needle-like crystal.)

1. A scintillator panel in which a scintillator is provided on a surface of a substrate, the scintillator having a first surface facing the surface and a second surface opposite to the first surface,

characterized in that the scintillator comprises a plurality of needle-like crystals each containing an alkali halide compound as a base, thallium iodide as an activator, and at least one of copper and silver as an additive element,

the additive element is contained in the second face at a concentration of not less than 0.04 mol% and not more than 0.5 mol%,

the concentration of the additive element is higher in the first face than in the second face, and

the thickness of the largest part of the faces of each needle-like crystal parallel to the surface becomes 1 time or more and 9 times or less of the thickness in the face parallel to the surface at a height of 10 μm in the direction from the first face to the second face of the needle-like crystal.

2. Scintillator plate according to claim 1, characterised in that the thickness of the largest part of the needle-shaped crystals is not more than 4 μm.

3. Scintillator panel according to claim 1 or 2, characterised in that the alkali halide compound is cesium iodide.

4. Scintillator panel according to one of the claims 1 to 3, characterised in that the concentration of the additive element increases continuously or stepwise from the second face to the first face.

5. Scintillator panel according to one of the claims 1 to 4, characterised in that the thickness is the length of the major axis of the ellipse of the acicular crystal having the smallest area and containing a plane parallel to the surface.

6. A radiation imaging apparatus comprising:

scintillator sheets according to any one of claims 1 to 5; and

a sensor panel for receiving light emitted from the scintillator.

7. The radiation imaging apparatus according to claim 6, wherein the scintillator panel is provided with the scintillator along a light receiving surface of the sensor panel and the substrate is located on a side away from the light receiving surface.

8. A method for manufacturing a scintillator panel, comprising:

a preparation step in which a vapor deposition material is prepared by mixing cesium iodide with an additive element material in an amount of not less than 0.1 wt% and not more than 0.3 wt% with respect to the cesium iodide; and

a vapor deposition step of forming a scintillator by vapor depositing the vapor deposition material on a substrate,

wherein the additive element material comprises at least one of copper iodide, copper bromide, silver iodide and silver bromide, and

in the vapor deposition step, the temperature of the substrate at the time of starting vapor deposition is not more than 100 ℃, and the temperature of the substrate at the time of completing vapor deposition is not less than 50 ℃ and not more than 200 ℃.

9. The method of claim 8, wherein the temperature of the substrate at the completion of the vapor deposition is not less than 70 ℃ and not more than 150 ℃ in the vapor deposition step.

10. The method according to claim 8 or 9, characterized in that in the vapor deposition step, vapor deposition of thallium iodide is performed together with the vapor deposition material.

11. The method according to any of claims 8 to 10, characterized in that after the vapour-depositing step the scintillator plate is heat-treated at not more than 200 ℃.

Technical Field

The invention relates to a scintillator panel, a radiation imaging apparatus, and a method of manufacturing the scintillator panel.

Background

As a Flat Panel Detector (FPD) used for radiation imaging in medical image diagnosis, non-destructive examination, or the like, an indirect conversion FPD that converts radiation transmitted through an object into light by a scintillator and detects light emitted by the scintillator by a light receiving element may be used. Needle-shaped crystal groups of alkali halide metal compounds such as cesium iodide are widely used for scintillators that convert radiation into light to efficiently transmit the emitted light to a light receiving element. The needle crystal group has a gap formed between the respective needle crystals and repeats total reflection of light in the crystals due to a difference in refractive index between the crystals and air, thereby efficiently guiding the emitted light to the light receiving element.

PTL 1 discloses that, when a scintillator is formed by vapor deposition, a substrate is placed obliquely with respect to a vertical axis above a vertical direction of a vapor deposition source of a scintillator material to form thin needle-like crystals and improve resolution characteristics of the scintillator. PTL 2 discloses that the emission luminance of a scintillator is improved by using a raw material containing a plurality of activators having different melting points with respect to cesium iodide.

Reference list

Patent document

PTL 1: international publication No.2013/089015

PTL 2: japanese patent No.5407140

Disclosure of Invention

Technical problem

It is an object of the present invention to provide a technique that advantageously improves the resolution and brightness characteristics of a scintillator.

Solution to the problem

In view of the above, a scintillator panel according to an embodiment of the present invention is a scintillator panel in which a scintillator is provided on a surface of a substrate, the scintillator having a first surface facing the surface and a second surface opposite to the first surface, characterized in that the scintillator comprises a plurality of needle-like crystals each containing an alkali halide compound as a base, thallium iodide as an activator, and at least one of copper and silver as additives, the additive is contained in the second face at a concentration of not less than 0.04 mol% and not more than 0.5 mol%, the concentration of the additive in the first face is higher than that in the second face, and the thickness of the largest part of the face of each needle-like crystal parallel to the surface becomes 1 times or more and 9 times or less of the thickness in the face parallel to the surface at a height of 10 μm in the direction from the first face to the second face of the needle-like crystal.

Advantageous effects of the invention

The above means provide a technique that advantageously improves the resolution and brightness characteristics of the scintillator.

Other features and advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings. It should be noted that the same reference numerals are used throughout the drawings to designate the same or similar components.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention that are presently preferred, and together with the general description given above and the detailed description of the preferred embodiments given below, serve to explain the principles of the invention.

Fig. 1 is a view showing an example of the configuration of an apparatus for forming a scintillator according to an embodiment of the present invention;

FIG. 2 is a view showing a method of measuring the diameter of a scintillator according to an embodiment of the present invention;

fig. 3 is a view showing an observed image of the surface of a scintillator according to an embodiment of the present invention;

fig. 4 is a view showing an observation image of the surface of a scintillator according to a comparative example of the embodiment of the present invention;

fig. 5 is a view showing an example of a configuration of a radiation imaging apparatus using a scintillator according to an embodiment of the present invention; and

fig. 6 is a view showing characteristics of scintillators according to embodiments of the present invention and comparative examples.

Detailed Description

It should be noted that the radiation according to the present invention can include not only α rays, β rays, and γ rays which are beams generated by particles (including photons) emitted by radioactive decay but also beams having energy equal to or greater than that of these beams, such as X-rays, particle rays, and cosmic rays.

The arrangement and manufacturing method of the scintillator panel and the radiation imaging apparatus according to the embodiment of the present invention are explained with reference to fig. 1 to 6. Fig. 1 is a view illustrating an example of the configuration of a deposition apparatus 110 for forming a scintillator panel 100 having a scintillator 101 according to the present embodiment. As shown in fig. 1, a scintillator panel 100 includes a material supply source 103 and a substrate 102 for depositing a scintillator 101, which are arranged in a chamber 105 capable of being evacuated to a vacuum. The scintillator panel 100 is formed by forming a scintillator 101 on a surface 108 of a substrate 102 using a deposition method, such as a vapor deposition method. The scintillator 101 has a first face 106 facing the surface 108 of the substrate 102 and a second face 107 on the opposite side of the first face 106. A plurality of vapor deposition materials 104 (to be described later) may be stored in one material supply source 103 and vapor deposited. Alternatively, the vapor deposition materials 104a-104c may be stored in different material supply sources 103a-103c, respectively, and vapor deposited, as shown in FIG. 1.

In the present embodiment, the scintillator 101 includes a plurality of needle-like crystals formed of an alkali halide compound as a base material using thallium iodide as an activator. As the alkali halide compound capable of forming a needle-like crystal, for example, cesium iodide, cesium bromide, or the like can be selected. This embodiment uses thallium iodide as an activator, which contains 0.2 mol% to 3.2 mol% of thallium with respect to the entire scintillator 101. This allows thallium to function as a light-emitting center to achieve sufficient light emission.

In the present embodiment, the needle-like crystals of the scintillator 101 contain at least one additive element of copper and silver. The second face 107 of the scintillator 101 contains an additive element at a concentration of 0.04 mol% to 0.5 mol%. The additive element may be copper or silver only or may include both copper and silver. As an additive element material for adding an additive element to the scintillator 101, an elemental metal such as copper or silver or a compound containing copper or silver, such as copper iodide, copper bromide, silver iodide, or silver bromide, may be used.

The vapor deposition materials 104 including the alkali metal halide compound, thallium iodide, and the additive element material may be stored in different material supply sources 103 and used for vapor deposition, respectively. Further, materials having similar melting points can be mixed and stored in the same material supply source 103 and vapor-deposited. For example, when cesium iodide (melting point: 621 ℃ C.) and copper iodide (melting point: 605 ℃ C.) are selected as the base material and the additive element material, respectively, cesium iodide and copper iodide as the additive element, which are mixed at a predetermined concentration, can be stored in one material supply source 103 and vapor-deposited. Alternatively, cesium iodide (melting point: 621 ℃ C.) as a base material and silver iodide (melting point: 552 ℃ C.) as an additive element material mixed at a predetermined concentration may be stored in one material supply source 103 and vapor-deposited.

When the alkali halide compound and the additive element material are mixed in advance and vapor-deposited, the melting point of the additive element material is lower than that of the alkali halide compound. Therefore, the concentration of the additive element contained in the scintillator 101 is high in the early stage of deposition, and becomes low in the later stage of deposition. That is, the concentration of the additive element in the first face 106 of the scintillator 101 is higher than the concentration of the additive element in the second face 107. Therefore, even when the element is added to cause coloring of the scintillator 101 (which causes light absorption), the following configuration of the radiation imaging apparatus can prevent a decrease in light emitted from the scintillator 101. This enables light to be easily guided to the sensor panel. Fig. 5 shows the configuration of a radiation imaging apparatus using the scintillator panel 100 according to the present embodiment. In the radiation imaging apparatus 500, the scintillator panel 100 can be of an indirect type in which the scintillator 101 is placed along the light receiving surface 502 of the (alongside) sensor panel 501 and the substrate 102 is placed on a side away from the light receiving surface 502. In the radiation imaging apparatus 500, in order for the light receiving surface 502 to sufficiently receive the light emitted by the scintillator 101, the concentration of the additive element in the second face 107 of the scintillator 101 is controlled to be as low as 0.04 mol% to 0.5 mol% (with respect to the scintillator 101). This can suppress the influence of coloring caused by the additive element and the reduction in efficiency of receiving light on the light receiving surface 502 of the sensor panel 501. As shown in fig. 5, the radiation 503 may be caused to enter the sensor panel 501 from the scintillator panel 100 or from the opposite side of the scintillator panel 100.

As described above, the alkali halide compound and the additive element material are mixed in advance, and then vapor-deposited. In this case, the concentration of the additive element in the scintillator 101 can be gradually and continuously increased from the second face 107 to the first face 106 of the scintillator 101. In contrast, the alkali halide compound and the additive element material may be vapor-deposited without being mixed. In this case, the material supply source 103 in which the additive element material is stored may be controlled to increase the concentration of the additive element continuously or stepwise from the second face 107 to the first face 106 of the scintillator 101. For example, the opening degree, temperature, and the like of a shutter (shutter) of the material supply source 103 in which the additive element material is stored as the vapor deposition material 104 are controlled. This makes it possible to control the concentration of the additive element contained in the scintillator 101 continuously or stepwise from the first face of the scintillator 101 at the early deposition stage to the second face at the later deposition stage.

In order to efficiently transmit the light emitted by the scintillator 101 to the sensor panel 501, it is important to improve the waveguide characteristics of the needle-like crystals in the longitudinal direction from the first face 106 to the second face 107 of the scintillator 101 facing the substrate 102. For this reason, it is important to control the thickness (diameter) of each needle-like crystal itself in the direction parallel to the surface 108 of the substrate 102 and the variation in thickness (diameter) of each needle-like crystal in the film thickness direction. Generally, at the beginning of the vapor deposition step of each needle-shaped crystal of cesium iodide as an alkali halide metal compound, minute crystal nuclei (initial nuclei) are formed on the substrate. Furthermore, proper selection of substrate temperature, pressure and deposition rate will cause the crystal nuclei to preferentially grow into needle-like crystals in the <100> orientation. In the latter phase of the deposition (on the second face 107), the thickness of the crystallization nuclei increases more in a direction parallel to the surface 108 of the substrate 102. Therefore, in order to improve the resolving power of the scintillator, it is necessary to make the needle-shaped crystals thin and suppress the increase in the size of the needle-shaped crystals. When the scintillator 101 is deposited by vapor deposition, supplying the additive element in the above manner can improve the crystallinity of each needle crystal at the initial stage of deposition, in particular, further reduce the thickness of the needle crystal in the direction parallel to the surface 108 of the substrate 102. On the other hand, reducing the concentration of the additive element in the second face 107 of the scintillator 101 can suppress the attenuation of light emission caused by the additive element.

In order to improve the waveguide characteristics, it is necessary to reduce the variation in thickness of each needle-like crystal in the direction parallel to the surface 108 of the substrate 102 between the early stage and the late stage of the deposition of the needle-like crystal. Therefore, the thickness of the largest portion of the plane parallel to the surface 108 of the substrate 102 of each needle-like crystal is set to be 1 times or more and 9 times or less of the thickness in the plane parallel to the surface 108 of the substrate 102 at a height of 10 μm in the direction from the first face 106 to the second face 107 of the needle-like crystal. As shown in the later-described examples and comparative examples, making the variation (increase rate) of the thickness in the plane parallel to the surface 108 of the substrate 102 of the scintillator 101 fall within the above-described range can satisfy both the requirements for resolution capability (resolution) and brightness. Further, the thickness of the largest portion of each needle-like crystal can be 4 μm or less. The thickness of the largest portion of the needle crystal may be smaller than the size of each light receiving element arranged in the sensor panel 501.

As shown in fig. 2, the thickness (diameter) of each needle-shaped crystal of the scintillator 101 may be the length of the major axis 204 of an ellipse 202 of the needle-shaped crystal of the scintillator 101 having a minimum area and including the face 201 parallel to the surface 108 of the substrate 102. The thickness (diameter) of each needle crystal of the scintillator 101 may also be the diameter of a circle of the needle crystal of the scintillator 101 that circumscribes the face 201 parallel to the surface 108 of the substrate 102. The evaluation of the thickness of each needle crystal or the thickness variation of the needle crystal of the scintillator 101 can be measured by, for example, observing the shape of the second face 107 or the side face of the scintillator 101 with a Scanning Electron Microscope (SEM) or the like. Referring to fig. 2, an ellipse 202 has a minor axis 203.

Fig. 3 shows an SEM image of the surface of the scintillator 101 when vapor deposition is performed with the additive element added. Fig. 4 shows an SEM image of the surface of the scintillator 101 when vapor deposition was performed without adding any additive element. The addition of the additive enables the thickness of each needle-shaped crystal of the scintillator 101 to be reduced and the resolving power to be improved. Further, each ellipse surrounded by white lines in fig. 3 and 4 represents an ellipse 202 having a minimum area and including a face 201 parallel to the surface 108 of the substrate 102 of each needle-like crystal of the scintillator 101 shown in fig. 2.

The evaluation of the resolution characteristics of the scintillator 101 can be quantitatively compared by measuring MTF (Modulation Transfer Functions). The luminance characteristics of the scintillator 101 can be evaluated by using photodetectors including various light receiving elements and cameras, such as a CCD (charge-coupled device) and a CMOS (Complementary Metal-Oxide Semiconductor). The chemical composition of the additive element contained in the scintillator 101, for example, the concentration of the additive element can be evaluated by, for example, X-ray fluorescence spectroscopy or inductively coupled plasma spectroscopy. The crystallinity of the scintillator 101 can be evaluated by, for example, X-ray diffraction analysis.

Next, the temperature of the substrate 102 when the scintillator 101 is deposited by vapor deposition will be described. In order to reduce the thickness (diameter) of each needle-like crystal, it is important that the temperature of the substrate 102 at the time of vapor deposition is low at the initial stage of deposition in consideration of the surface diffusion length of vapor deposition particles reaching the surface of the substrate 102 on which deposition is performed. As shown in examples and comparative examples described later, the substrate temperature at the start of vapor deposition may be 100 ℃ or lower. Further, the substrate temperature at the start of vapor deposition may be 70 ℃ or less. If the temperature of the substrate 102 at the early stage of vapor deposition becomes higher than 130 deg.c, the surface diffusion length of the vapor deposition particles increases. Therefore, the interval between the initial nuclei increases, and as shown in a comparative example described later, the crystal size of each needle-like crystal increases on the second surface 107 side of the scintillator 101. This may disturb the crystal structure or no longer maintain the gaps between the needle-like crystals. As a result, satisfactory resolving power characteristics cannot be obtained.

In contrast, if the temperature of the substrate 102 is low when the acicular crystal of the scintillator 101 is grown, the activator serving as the luminescence center may not be sufficiently activated from the viewpoint of the luminance characteristics. For example, if the temperature of the substrate 102 is as low as 40 ℃ or less in the growth of the needle-shaped crystals of the scintillator 101, the width (diameter) of each needle-shaped crystal of the scintillator 101 extremely decreases, resulting in an excessive increase in the surface area of the scintillator 101. The alkali halide compound as a base material of the scintillator 101 exhibits deliquescence characteristics. Therefore, as the surface area increases, protection using a protective film for moisture resistance (to be described later) becomes incomplete. This makes it more difficult to prevent moisture deterioration of the scintillator 101. If the protection of the scintillator 101 is not complete, the deliquescent nature of the scintillator 101 will fuse the individual needle crystals. This may result in a reduction in resolving power.

Therefore, in the present embodiment, depositing the scintillator 101 by vapor deposition while setting the temperature of the substrate 102 to a temperature between 50 ℃ and 200 ℃ can prevent moisture deterioration while thinning each needle crystal. In other words, the substrate temperature may be 100 ℃ or less at the start of vapor deposition and may be 50 ℃ to 200 ℃ at the end of vapor deposition. Further, the substrate temperature may be 70 ℃ to 150 ℃ at the end of the vapor deposition. It is assumed that the light emission luminance is insufficient. In this case, after the vapor deposition is started, the activator as the luminescence center is activated by raising the temperature of the substrate 102 at the latter stage of the deposition to such an extent that the deterioration of the needle-like crystal structure is not caused. This can improve the light emission luminance. Further, for example, after the vapor deposition step, the substrate 102 on which the scintillator 101 is formed is subjected to a heat treatment in the deposition apparatus 110 or is moved from the deposition apparatus 110 to an external apparatus to be subjected to the heat treatment at a temperature of 200 ℃. This enables high resolution capability and brightness characteristics to be maintained while maintaining the needle-like crystal structure.

As described above, the scintillator 101 exhibits deliquescent properties, and thus a moisture-proof protective film for the needle-shaped crystals of the scintillator 101 is formed to cover the scintillator 101. For example, parylene, fluororesin, or TEOS film can be used as the protective film. These protective films can be formed by various coating methods such as a spray coating method, a coating method, and a CVD method. For example, after the scintillator panel 100 having the scintillator 101 formed on the substrate 102 is removed from the deposition apparatus 110, a protective film using parylene covering the scintillator 101 may be deposited immediately by using a spray method.

Examples and comparative examples of the present embodiment will be described below. Fig. 6 shows a summary of characteristics of the scintillator 101 according to the following examples and comparative examples. First, a comparative example will be explained.

First comparative example

In the first comparative example, by using the deposition apparatus 110 shown in fig. 1, using cesium iodide as a base material and thallium iodide as an activator, the scintillator 101 having a needle-like crystal structure was formed. First, a material supply source 103a filled with cesium iodide as a vapor deposition material 104a, a material supply source 103b filled with thallium iodide as a vapor deposition material 104b, and a substrate 102 are arranged in a deposition apparatus 110. The substrate 102 used in this case is obtained by stacking an aluminum reflective layer having a thickness of 100nm and a silicon dioxide layer having a thickness of 50nm on a silicon substrate. As the material supply sources 103a and 103b, a cylindrical material supply source made of tantalum is used.

After the deposition apparatus 110 was evacuated to 0.01Pa or less, electric current was gradually supplied to the material supply sources 103a and 103b to heat them. When the temperatures of the material supply sources 103a and 103b reach the set temperature, a shutter (not shown) provided between the substrate 102 and the material supply sources 103a and 103b is opened to start deposition of the scintillator 101 by vapor deposition. At this time, the temperature and the rotation speed of the substrate 102 were set to 40 ℃ and 30rpm, respectively. The state of deposition is checked, and the shutter is closed before the vapor deposition materials 104a and 104b are consumed, whereupon the deposition of the scintillator 101 is completed. After cooling the substrate 102 and the material supply sources 103a and 103b to room temperature, the substrate 102 was removed and observed with SEM to confirm that the needle-like crystal group was formed. The thickness of the scintillator 101 obtained was 837 μm. The thickness of the largest part of each needle-like crystal of the scintillator 101 in a plane parallel to the surface 108 of the substrate 102 was 1.7 μm. The thickness in a plane parallel to the surface 108 of the substrate 102 at a height of 10 μm in the direction from the first face 106 to the second face 107 at the initial stage of deposition of each needle crystal of the scintillator 101 is 1.2 μm. According to the above results, the rate of increase of each needle-shaped crystal of the scintillator 101 was about 1.4 times. In this case, the scintillator 101 grows in a needle-like shape from the initial nucleus into a needle-like crystal at a height of 10 μm in the direction from the first face 106 to the second face 107 of the scintillator 101. Further, as shown in fig. 2, the thickness of each needle-shaped crystal of the scintillator 101 is determined by determining the major axis 204 of an ellipse 202 of the needle-shaped crystal of the scintillator 101, which has the smallest area and includes the plane 201 parallel to the surface 108 of the substrate 102. This also applies to each example and each comparative example described below.

The second face 107 of the scintillator 101 is placed in close contact with the CMOS photodetector via an fop (fiber optical plate), and the photodetector is irradiated with X-rays from the substrate 102 side, the X-rays being in conformity with the radiation quality RQA5 defined by the international electrotechnical commission. The luminance value obtained at this time was defined as 100 and relatively compared with each corresponding value in each example and each comparative example. Further, a value whose spatial frequency corresponds to two line pairs per millimeter (2LP/mm), which is an index representing the resolving power of the scintillator obtained by the edge method (edge method) using a blade made of tungsten, was obtained as the MTF value. The MTF value obtained at this time was defined as 100 and compared with each corresponding value in each example and each comparative example.

Second comparative example

In the second comparative example, by using the deposition apparatus 110 shown in fig. 1, cesium iodide was used as a base material and thallium iodide was used as an activator, thereby forming the scintillator 101 having a needle-like crystal structure. First, a material supply source 103a filled with cesium iodide as a vapor deposition material 104a, a material supply source 103b filled with thallium iodide as a vapor deposition material 104b, and a substrate 102 are arranged in a deposition apparatus 110. The substrate 102 used in this case is obtained by stacking an aluminum reflective layer having a thickness of 100nm and a silicon dioxide layer having a thickness of 50nm on a silicon substrate. As the material supply sources 103a and 103b, a cylindrical material supply source made of tantalum is used.

After the deposition apparatus 110 was evacuated to 0.01Pa or less, electric current was gradually supplied to the material supply sources 103a and 103b to heat them. When the temperatures of the material supply sources 103a and 103b reach the set temperature, a shutter (not shown) provided between the substrate 102 and the material supply sources 103a and 103b is opened to start deposition of the scintillator 101 by vapor deposition. At this time, the temperature and the rotation speed of the substrate 102 were set to 130 ℃ and 30rpm, respectively. The state of deposition is checked, and the shutter is closed before the vapor deposition materials 104a and 104b are consumed, whereupon the deposition of the scintillator 101 is completed. After cooling the substrate 102 and the material supply sources 103a and 103b to room temperature, the substrate 102 was removed and observed with SEM to confirm that the needle-like crystal group was formed. The thickness of the scintillator 101 obtained was 853 μm. The thickness of the largest part of each needle-like crystal of the scintillator 101 in a plane parallel to the surface 108 of the substrate 102 was 9.5 μm. The thickness in a plane parallel to the surface 108 of the substrate 102 at a height of 10 μm in the direction from the first face 106 to the second face 107 at the initial stage of deposition of each needle crystal of the scintillator 101 is 1.0 μm. Therefore, the rate of increase of each needle-shaped crystal of the scintillator 101 is about 9.5 times.

The second face 107 of the scintillator 101 is placed via the FOP to be in close contact with the CMOS photodetector, and the photodetector is irradiated with X-rays from the substrate 102 side, the X-rays conforming to the radiation quality RQA 5. The obtained luminance value was 129 compared to the first comparative example. Further, the MTF value, which is an index indicating the resolving power of the scintillator, was 89 as compared with the first comparative example.

In this comparative example, the temperature of the substrate 102 when the scintillator 101 is deposited by vapor deposition is made higher than that in the first comparative example described above to activate the activator serving as the luminescence center, thereby improving the luminance. However, since the temperature at the initial stage of crystal growth is high, each needle-like crystal on the second face 107 of the scintillator 101 grows largely in the direction parallel to the surface 108 of the substrate 102. As a result, the enlargement rate of each needle-shaped crystal of the scintillator 101 was 9.5 times, which was higher than 9 times, resulting in deterioration of the resolving power characteristics as compared with the first comparative example described above.

Third comparative example

In the third comparative example, by using the deposition apparatus 110 shown in fig. 1, cesium iodide was used as a base material and thallium iodide was used as an activator, thereby forming the scintillator 101 having a needle-like crystal structure. First, a vapor deposition material was prepared by mixing copper iodide (CuI) as an additive element material with cesium iodide in an amount of 0.2 wt% relative to cesium iodide and charged into the material supply source 103 a. A material supply source 103a and a material supply source 103b filled with thallium iodide as a vapor deposition material 104b and a substrate 102 are arranged in the deposition apparatus 110. The substrate 102 used in this case is obtained by stacking an aluminum reflective layer having a thickness of 100nm and a silicon dioxide layer having a thickness of 50nm on a silicon substrate. As the material supply sources 103a and 103b, a cylindrical material supply source made of tantalum is used.

After the deposition apparatus 110 was evacuated to 0.01Pa or less, electric current was gradually supplied to the material supply sources 103a and 103b to heat them. When the temperatures of the material supply sources 103a and 103b reach the set temperature, a shutter (not shown) provided between the substrate 102 and the material supply sources 103a and 103b is opened to start deposition of the scintillator 101 by vapor deposition. At this time, the temperature and the rotation speed of the substrate 102 were set to 40 ℃ and 30rpm, respectively. The state of deposition is checked, and the shutter is closed before the vapor deposition materials 104a and 104b are consumed, whereupon the deposition of the scintillator 101 is completed. After cooling the substrate 102 and the material supply sources 103a and 103b to room temperature, the substrate 102 was removed and observed with SEM to confirm that the needle-like crystal group was formed. The thickness of the obtained scintillator 101 was 764. mu.m. The thickness of the largest part of each needle-like crystal of the scintillator 101 in a plane parallel to the surface 108 of the substrate 102 was 0.40 μm. The thickness in a plane parallel to the surface 108 of the substrate 102 at a height of 10 μm in the direction from the first face 106 to the second face 107 at the initial stage of deposition of each needle-like crystal of the scintillator 101 is 0.16 μm. Therefore, the rate of increase of each needle-shaped crystal of the scintillator 101 is 2.5 times.

The scintillator 101 was peeled off from the substrate 102, and the concentration of copper contained in the scintillator 101 was measured by X-ray fluorescence spectroscopy. The concentration of copper in the first face 106 of the scintillator 101 facing the substrate 102 was 2.24 mol%, and 1.22 mol% in the second face 107. It is found that the concentration of the additive element contained in the first surface 106, which is the surface opposite to the second surface 107 of the scintillator 101, is higher than the concentration of the additive element contained in the second surface 107. Further, the concentration of the additive element gradually increases from the second face 107 to the first face 106 of the scintillator 101.

The second face 107 of the scintillator 101 is placed via the FOP to be in close contact with the CMOS photodetector, and the photodetector is irradiated with X-rays from the substrate 102 side, the X-rays conforming to the radiation quality RQA 5. The obtained luminance value was 9.5 as compared with the first comparative example. Further, the MTF value, which is an index indicating the resolving power of the scintillator, was 131 as compared with the first comparative example.

In this comparative example, adding copper as an additive element to the scintillator 101 enables the thickness of each needle-like crystal to be greatly reduced, as compared with the first and second comparative examples described above. Therefore, the resolving power is improved as compared with the first and second comparative examples described above. On the other hand, on the front surface side of the scintillator 101, the concentration of the additive element is as high as 1.22 mol%, and the scintillator 101 is colored by the additive element. Therefore, the luminance value is greatly reduced as compared with the first and second comparative examples described above.

Fourth comparative example

In the fourth comparative example, by using the deposition apparatus 110 shown in fig. 1, cesium iodide was used as a base material and thallium iodide was used as an activator, thereby forming the scintillator 101 having a needle-like crystal structure. First, a vapor deposition material was prepared by mixing copper iodide (CuI) as an additive element material with cesium iodide in an amount of 0.2 wt% relative to cesium iodide and charged into the material supply source 103 a. A material supply source 103a and a material supply source 103b filled with thallium iodide as a vapor deposition material 104b and a substrate 102 are arranged in the deposition apparatus 110. The substrate 102 used in this case is obtained by stacking an aluminum reflective layer having a thickness of 100nm and a silicon dioxide layer having a thickness of 50nm on a silicon substrate. As the material supply sources 103a and 103b, a cylindrical material supply source made of tantalum is used.

The second face 107 of the scintillator 101 is placed via the FOP to be in close contact with the CMOS photodetector, and the photodetector is irradiated with X-rays from the substrate 102 side, the X-rays conforming to the radiation quality RQA 5. The obtained luminance value was 120 compared to the first comparative example. Further, the MTF value, which is an index indicating the resolving power of the scintillator, was 45 as compared with the first comparative example.

In this comparative example, since the temperature of the substrate 102 when the scintillator 101 is deposited by vapor deposition is higher than that of the third comparative example, thallium activation as an activator that is a light-emitting center is used, thereby improving the luminance. However, since the temperature at the initial stage of crystal growth is high, needle-like crystals grow on the second surface 107 of the scintillator 101 in a direction parallel to the surface 108 of the substrate 102. Therefore, the enlargement rate of each needle-shaped crystal of the scintillator 101 becomes as large as 40 times, resulting in significant deterioration of the resolving power.

First embodiment

Four examples of the present embodiment will be explained below. In the first embodiment, by using the deposition apparatus 110 shown in fig. 1, cesium iodide was used as a base material and thallium iodide was used as an activator, thereby forming the scintillator 101 having a needle-like crystal structure. First, a vapor deposition material was prepared by mixing copper iodide (CuI) as an additive element material with cesium iodide in an amount of 0.2 wt% relative to cesium iodide and charged into the material supply source 103 a. A material supply source 103a and a material supply source 103b filled with thallium iodide as a vapor deposition material 104b and a substrate 102 are arranged in the deposition apparatus 110. The substrate 102 used in this case is obtained by stacking an aluminum reflective layer having a thickness of 100nm and a silicon dioxide layer having a thickness of 50nm on a silicon substrate. As the material supply sources 103a and 103b, a cylindrical material supply source made of tantalum is used.

After the deposition of the scintillator 101 by vapor deposition, the scintillator panel 100 including the scintillator 101 and the substrate 102 is subjected to heat treatment at 200 ℃ or lower. More specifically, the substrate 102 is heated to 150 ℃ by using a lamp heating device (not shown) provided in the deposition apparatus 110, thereby performing a heat treatment. After the heat treatment, the substrate 102 and the material supply sources 103a and 103b are cooled to room temperature, and the substrate 102 is removed. The scintillator 101 was then observed with SEM to confirm that the needle-like crystal group was formed. The thickness of the scintillator 101 obtained was 795 μm. The thickness of the largest part of each needle-like crystal of the scintillator 101 in a plane parallel to the surface 108 of the substrate 102 was 2.1 μm. The thickness in a plane parallel to the surface 108 of the substrate 102 at a height of 10 μm in the direction from the first face 106 to the second face 107 at the initial stage of deposition of each needle crystal of the scintillator 101 is 0.30 μm. Therefore, the rate of increase of each needle-shaped crystal of the scintillator 101 is about 7.0 times.

In this example, an appropriate amount of copper as an additive element was added to cesium iodide. Further, the temperature of the substrate 102 at the time when the deposition of the scintillator 101 by vapor deposition is started and the temperature of the substrate 102 during and at the end of the vapor deposition are respectively controlled to appropriate temperatures. After the vapor deposition, the scintillator 101 is heat-treated at an appropriate temperature. The scintillator 101 formed in this process was found to achieve high resolution capability and improved brightness.

Second embodiment

In the second embodiment, by using the deposition apparatus 110 shown in fig. 1, cesium iodide was used as a base material and thallium iodide was used as an activator, thereby forming the scintillator 101 having a needle-like crystal structure. First, a vapor deposition material was prepared by mixing copper iodide (CuI) as an additive element material with cesium iodide in an amount of 0.2 wt% relative to cesium iodide and charged into the material supply source 103 a. A material supply source 103a and a material supply source 103b filled with thallium iodide as a vapor deposition material 104b and a substrate 102 are arranged in the deposition apparatus 110. The substrate 102 used in this case is obtained by stacking an aluminum reflective layer having a thickness of 100nm and a silicon dioxide layer having a thickness of 50nm on a silicon substrate. As the material supply sources 103a and 103b, a cylindrical material supply source made of tantalum is used.

After the scintillator 101 is deposited by vapor deposition, the substrate 102 on which the scintillator 101 is deposited is removed from the deposition apparatus 110 and is heat-treated in a nitrogen atmosphere at 160 ℃ by using an infrared annealing furnace (not shown). After the thermal treatment, the substrate 102 is cooled to room temperature and removed. The scintillator 101 was then observed with SEM to confirm that the needle-like crystal group was formed. The thickness of the scintillator 101 obtained was 777 μm. The thickness of the largest part of each needle-like crystal of the scintillator 101 in a plane parallel to the surface 108 of the substrate 102 was 3.5 μm. The thickness in a plane parallel to the surface 108 of the substrate 102 at a height of 10 μm in the direction from the first face 106 to the second face 107 at the initial stage of deposition of each needle-like crystal of the scintillator 101 is 0.40 μm. Therefore, the rate of increase of each needle-shaped crystal of the scintillator 101 is about 8.8 times.

The surface of the scintillator 101 is placed via the FOP to be in close contact with the CMOS photodetector, and the photodetector is irradiated with X-rays from the substrate 102 side, the X-rays conforming to the radiation quality RQA 5. The obtained luminance value was 155 as compared with the first comparative example. Further, the MTF value, which is an index indicating the resolving power of the scintillator, was 137 compared to the first comparative example.

In this example, as in the first example described above, an appropriate amount of copper as an additive was added to cesium iodide. Further, the substrate temperature at the start of vapor deposition and the substrate temperature during and at the end of vapor deposition are controlled to appropriate temperatures, respectively. After the vapor deposition, the scintillator 101 is heat-treated at an appropriate temperature. The scintillator 101 formed in this process was found to achieve high resolution capability and improved brightness.

Third embodiment

In the third embodiment, by using the deposition apparatus 110 shown in fig. 1, cesium iodide was used as a base material and thallium iodide was used as an activator, thereby forming the scintillator 101 having a needle-like crystal structure. First, a vapor deposition material was prepared by mixing copper iodide (CuI) as an additive element material with cesium iodide in an amount of 0.2 wt% relative to cesium iodide and charged into the material supply source 103 a. A material supply source 103a and a material supply source 103b filled with thallium iodide as a vapor deposition material 104b and a substrate 102 are arranged in the deposition apparatus 110. The substrate 102 used in this case is obtained by stacking an aluminum reflective layer having a thickness of 100nm and a silicon dioxide layer having a thickness of 50nm on a silicon substrate. As the material supply sources 103a and 103b, a cylindrical material supply source made of tantalum is used.

In the present embodiment, unlike each of the embodiments and each of the comparative examples described above, although the temperature of the substrate 102 was not specifically controlled, the thermosensitive tape bonded to the substrate after deposition indicated that the realized temperature was about 150 ℃. That is, the temperature of the substrate 102 at the start of vapor deposition is room temperature, but when vapor deposition is started, the substrate 102 is heated to 150 ℃ while heat is transferred to the substrate 102 from the material supply sources 103a and 103 b. As a result, the deposition of the scintillator 101 may have been performed at or near 150 ℃ after the formation of the initial nuclei at the beginning of the deposition. In this case, the room temperature can be from 10 ℃ to 30 ℃, or can be from 15 ℃ to 25 ℃, or can be, for example, 300K (27 ℃).

After cooling the substrate 102 and the material supply sources 103a and 103b to room temperature, the substrate 102 was removed and observed with SEM to confirm that the needle-like crystal group was formed. The thickness of the scintillator 101 obtained was 513 μm. The thickness of the largest part of each needle-like crystal of the scintillator 101 in a plane parallel to the surface 108 of the substrate 102 was 2.2 μm. The thickness in a plane parallel to the surface 108 of the substrate 102 at a height of 10 μm in the direction from the first face 106 to the second face 107 at the initial stage of deposition of each needle crystal of the scintillator 101 is 0.30 μm. Therefore, the rate of increase of each needle-shaped crystal of the scintillator 101 is about 7.3 times.

The second face 107 of the scintillator 101 is placed via the FOP to be in close contact with the CMOS photodetector, and the photodetector is irradiated with X-rays from the substrate 102 side, the X-rays conforming to the radiation quality RQA 5. The obtained luminance value was 143 compared to the first comparative example. Further, the MTF value, which is an index indicating the resolving power of the scintillator, was 135 compared to the first comparative example.

In this example, an appropriate amount of copper as an additive was added to cesium iodide. Further, the temperature of the substrate 102 at the start of vapor deposition and the temperature of the substrate 102 during and at the end of vapor deposition are controlled to appropriate temperatures, respectively. The scintillator 101 formed in this process was found to achieve high resolution capability and improved brightness.

Fourth embodiment

In the fourth embodiment, by using the deposition apparatus 110 shown in fig. 1, cesium iodide was used as a base material and thallium iodide was used as an activator, thereby forming the scintillator 101 having a needle-like crystal structure. First, a vapor deposition material was prepared by mixing silver iodide (AgI) as an additive element material with cesium iodide in an amount of 0.25 wt% relative to cesium iodide and charged into the material supply source 103 a. A material supply source 103a and a material supply source 103b filled with thallium iodide as a vapor deposition material 104b and a substrate 102 are arranged in the deposition apparatus 110. The substrate 102 used in this case is obtained by stacking an aluminum reflective layer having a thickness of 100nm and a silicon dioxide layer having a thickness of 50nm on a silicon substrate. As the material supply sources 103a and 103b, a cylindrical material supply source made of tantalum is used.

After cooling the substrate 102 and the material supply sources 103a and 103b to room temperature, the substrate 102 was removed and observed with SEM to confirm that the needle-like crystal group was formed. The film thickness of the scintillator 101 obtained was 464 μm. The thickness of the largest part of each needle-like crystal of the scintillator 101 in a plane parallel to the surface 108 of the substrate 102 was 3.0 μm. The thickness in a plane parallel to the surface 108 of the substrate 102 at a height of 10 μm in the direction from the first face 106 to the second face 107 at the initial stage of deposition of each needle crystal of the scintillator 101 is 0.58 μm. Therefore, the rate of increase of each needle-shaped crystal of the scintillator 101 is about 5.2 times.

The second face 107 of the scintillator 101 is placed via the FOP to be in close contact with the CMOS photodetector, and the photodetector is irradiated with X-rays from the substrate 102 side, the X-rays conforming to the radiation quality RQA 5. The MTF value, which is an index indicating the resolving power of the obtained scintillator, was 163 as compared with the first comparative example.

In this example, an appropriate amount of copper as an additive element was added to cesium iodide. Further, the temperature of the substrate 102 at the start of vapor deposition and the temperature of the substrate 102 during and at the end of vapor deposition are controlled to appropriate temperatures, respectively. It was found that the scintillator 101 formed in this process makes it possible to miniaturize the diameter of each needle-like crystal even if silver is used as an additive element, and thus realizes high resolution capability.

In the present embodiment and each example, the scintillator 101 is formed of needle-like crystals obtained by using cesium iodide (which is an alkali halide metal compound) as a base material and thallium iodide as an activator and the scintillator 101 contains at least one of additive elements including copper and silver. At this time, the second face 107 of the scintillator 101 contains the additive element at a concentration of 0.04 mol% to 0.5 mol%. Further, the scintillator 101 is formed such that the concentration of the additional element is higher in the first face 106 of the scintillator 101 than in the second face 107 thereof. The vapor deposition material for depositing the scintillator 101 is prepared by mixing cesium iodide as an alkali halide metal compound with an additive element in an amount of 0.1 wt% to 0.3 wt% with respect to cesium iodide. The temperature of the substrate 102 when the deposition of the scintillator 101 using the vapor deposition material is started is set to 100 ℃ or less, and the temperature of the substrate 102 when the vapor deposition is ended is set to 50 ℃ to 200 ℃. In each of the above-described embodiments, the temperature of the substrate 102 during and at the end of the vapor deposition process was set to 70 ℃ to 150 ℃. The scintillator 101 is deposited using this process such that the thickness of the largest portion of the plane parallel to the surface 108 of the substrate 102 of each needle-like crystal becomes 1 time or more and 9 times or less of the thickness in the plane parallel to the surface 108 of the substrate 102 at a height of 10 μm from the first face 106 of the needle-like crystal. Further, at this time, the scintillator 101 is deposited so that the thickness of the largest portion of each needle-like crystal is 4 μm or less. This enables the scintillator 101 to have high resolving power and improve luminance, thereby satisfying the requirements for both resolving power (resolution) and luminance.

The present invention is not limited to the above-described embodiments, and various changes and modifications can be made within the spirit and scope of the present invention. Therefore, to apprise the public of the scope of the present invention, the following claims are made.

The present application claims priority based on japanese patent application No.2017-117886, filed on 15/6/2017, hereby incorporated by reference in its entirety.

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Scintillator panel, radiation imaging apparatus, and method for manufacturing scintillator panel

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