阅读说明：本技术 一种钽酸锂晶片黑化装置及其使用方法 (Lithium tantalate wafer blackening device and using method thereof ) 是由 李辉 叶竹之 雷晗 于 2019-11-27 设计创作，主要内容包括：本发明公开了一种钽酸锂晶片黑化装置及其使用方法。包括盛装管,以及放置在盛装管内部的晶片放置装置,所述晶片放置装置包括底板、盖板以及设置在两者之间的多个治具,所述晶片放置装置通过底板水平放置在盛装管内部,所述治具为环状结构并且在其环状结构的两个端面均开设有通槽,多个治具重叠水平放置在底板上,且相邻治具间的通槽交错排列,所述盖板靠近治具的一侧还设置有重块,所述重块与治具内环匹配能够嵌入治具内环。本发明提高了钽酸锂晶片黑化均匀性。(The invention discloses a lithium tantalate wafer blackening device and a using method thereof. Including the splendid attire pipe to and place at the inside wafer placer of splendid attire pipe, wafer placer includes bottom plate, apron and sets up a plurality of tools between the two, wafer placer places at the splendid attire intraduct through the bottom plate level, the tool is the annular structure and all has seted up logical groove at two terminal surfaces of its annular structure, and a plurality of tools overlap the level and place on the bottom plate, and the logical groove staggered arrangement between adjacent tool, the apron still is provided with the pouring weight near one side of tool, the pouring weight can imbed the tool inner ring with the matching of tool inner ring. The invention improves the blackening uniformity of the lithium tantalate wafer.)

1. The utility model provides a lithium tantalite wafer blackening device, includes splendid attire pipe (1) to and place at inside wafer placer (2) of splendid attire pipe (1), its characterized in that: wafer placer (2) include bottom plate (21), apron (23) and set up a plurality of tool (22) between the two, wafer placer (2) are placed inside splendid attire pipe (1) through bottom plate (21) level, tool (22) are cyclic annular structure and all seted up logical groove (2201) at its cyclic annular structure's two terminal surfaces, and a plurality of tool (22) overlap the level and place on bottom plate (21), and logical groove (2201) staggered arrangement between adjacent tool (22), one side that apron (23) are close to tool (22) still is provided with pouring weight (24), pouring weight (24) and tool (22) inner ring match can imbed tool (22) inner ring.

2. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the upper end face and the lower end face of the jig (22) are provided with at least 2 through grooves (2201), and the through grooves (2201) on the upper end face of the jig (22) correspond to the through grooves (2201) on the lower end face one to one.

3. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the two end faces of the jig (22) are both of a plane structure.

4. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the bottom plate (21) is a rectangular plane plate.

5. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the jig (22) is made of stainless steel materials.

6. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the end faces of the two ends of the containing pipe (1) are also provided with heat insulation pads (3) matched with the pipe openings.

7. The blackening device for the lithium tantalate wafer according to claim 6, wherein: the inner wall of the containing pipe (1) is also provided with fins (11).

8. The blackening device for the lithium tantalate wafer according to claim 7, wherein: the fins (11) are spiral and extend to two ends of the containing pipe (1).

9. A method for using a lithium tantalate wafer blackening device, comprising the lithium tantalate wafer blackening device according to any one of claims 1 to 8, characterized by further comprising the following steps of:

s1, placing a jig (22) on the bottom plate (21), adding reducing agent powder with a fixed mass ratio into the jig (22), leveling and compacting;

s2, placing the lithium tantalate wafer on the compacted reducing agent powder in the jig (22);

s3, adding reducing agent powder with a fixed mass ratio to cover the lithium tantalate wafer, strickling and compacting;

s4, repeating the steps S1-S3, and stacking a plurality of jigs (22) and lithium tantalate wafers on the jigs (22);

s5, embedding a weight (24) in the inner ring of the uppermost jig (22), covering a cover plate (23) on the weight (24), and reinforcing and compacting the reducing agent powder;

s6, placing the whole wafer placing device (2) into the containing tube (1), filling 2-4L/min of nitrogen, carrying out heat treatment at the constant temperature of 480-550 ℃ for 3-10h, and taking out the lithium tantalate wafer after the temperature naturally drops to the room temperature.

10. The use method of the lithium tantalate wafer blackening device according to claim 9, wherein: in the step S2, the lithium tantalate wafer is placed at the center of the jig (22).