阅读说明：本技术 一种清洗剂及其制备方法和清洗工艺 (Cleaning agent and preparation method and cleaning process thereof ) 是由 袁小碧 于 2019-11-07 设计创作，主要内容包括：本发明提供了一种清洗剂,包括无机碱,有机碱,分散剂,螯合剂,阴离子表面活性剂,阳离子表面活性剂和增溶剂,溶剂为水；其中,所述阳离子表面活性剂为易溶于水的季铵盐型阳离子表面活性剂。本发明提供的一种清洗剂添加量较低,易漂洗,能有效的去除蓝宝石表面的研磨粉与抛光液,解决蓝宝石表面吸附能力较强的问题。本发明还提供了该清洗剂的制备方法,制备方法简单,方便操作。本发明还提供了一种使用上述清洗剂的清洗工艺,清洗后产品检验合格率在98％以上,工艺简单且单次添加清洗效果能保持24H以上,且可采用全自动机器控制。(The invention provides a cleaning agent, which comprises inorganic base, organic base, a dispersing agent, a chelating agent, an anionic surfactant, a cationic surfactant and a solubilizer, wherein the solvent is water; wherein the cationic surfactant is a quaternary ammonium salt type cationic surfactant which is easily soluble in water. The cleaning agent provided by the invention is low in addition amount and easy to rinse, can effectively remove grinding powder and polishing solution on the surface of sapphire, and solves the problem of strong adsorption capacity of the surface of sapphire. The invention also provides a preparation method of the cleaning agent, which is simple and convenient to operate. The invention also provides a cleaning process using the cleaning agent, the inspection qualification rate of the cleaned product is more than 98%, the process is simple, the cleaning effect can be kept more than 24H by single addition, and the cleaning process can be controlled by a full-automatic machine.)

1. A cleaning agent, comprising: inorganic base, organic base, dispersant, chelating agent, anionic surfactant, cationic surfactant and solubilizer, wherein the solvent is water; wherein the cationic surfactant is a quaternary ammonium salt type cationic surfactant which is easily soluble in water.

2. The cleaning agent according to claim 1, which is prepared from the following components in percentage by weight: 5-10% of inorganic base, 5-10% of organic base, 5-8% of dispersing agent, 10-20% of chelating agent, 5-8% of anionic surfactant, 1-3% of cationic surfactant, 2-9% of solubilizer and 35-65% of water.

3. The cleaning agent according to claim 2, wherein the inorganic base is one or both of sodium hydroxide and potassium hydroxide; the organic alkali is one or two of triethanolamine and monoethanolamine.

4. The cleaning agent according to claim 2, wherein the dispersant is one or more of sodium hexametaphosphate, methylene bis-naphthalene sulfonate, polyacrylamide and fatty acid polyglycol ester; the chelating agent is one or two of sodium gluconate, sodium citrate and tetrasodium ethylene diamine tetraacetate; the solubilizer is one of octenyl succinic acid glycoside and polyoxyethylene sorbitan ester.

5. The cleaning agent according to claim 2, wherein the anionic surfactant is one or more of methyl monoethanolamide cocoate, alkyl diphenyl ether disulfonate, fatty alcohol polyoxyethylene ether sulfate, and sodium dodecyl sulfate.

6. The cleaning agent according to claim 2, wherein the quaternary ammonium salt cationic surfactant is one or more of methyl trihydroxyethyl methyl ammonium sulfate, dimethyl octadecyl hydroxyethyl ammonium nitrate, hexadecyl bis hydroxyethyl methyl ammonium chloride and dodecyl trimethyl ammonium chloride.

7. A method for preparing the cleaning agent as claimed in any one of claims 1 to 6, which comprises the following steps:

1) preparing raw materials according to the proportion; adding water into a reaction kettle, then sequentially adding inorganic base, organic base, a dispersing agent and a chelating agent, and stirring and dispersing under normal pressure until the particles are completely dissolved;

2) after the temperature is reduced to 50 ℃, sequentially adding an anionic surfactant, a cationic surfactant and a solubilizer, and stirring for 3-4H under normal pressure;

3) stopping stirring and standing for 2-3H, cooling the liquid to room temperature, and obtaining the transparent liquid.

8. A cleaning process for cleaning sapphire to be cleaned in an ultrasonic cleaning machine is characterized by comprising the following steps:

ultrasonic cleaning with citric acid solution heated to 65-80 deg.C;

ultrasonic cleaning with a cleaning agent according to any one of claims 1 to 6 heated to 65 to 80 ℃;

spraying with normal temperature water;

ultrasonic cleaning with water heated to 65-80 deg.C;

the sapphire is dried at the temperature of 100-110 ℃.

9. A cleaning process according to claim 8, wherein citric acid is used in an amount of 3-8% of the total water in the tank of the ultrasonic cleaning machine.

10. The cleaning process according to claim 8, wherein the amount of the cleaning agent is 5-10% of the total amount of water in the water tank of the ultrasonic cleaning machine; preferably 8%.

Technical Field

The invention relates to the technical field of cleaning agents, and particularly relates to a cleaning agent, a preparation method and a cleaning process.

Background

Because sapphire has high hardness, high melting point, good light transmittance, excellent electrical insulation and stable chemical property, the sapphire is widely applied to high-tech fields such as machinery, optics, information and the like. Grinding powder, oily polishing solution and the like can be used in the sapphire processing process, and the surface of the sapphire is negatively charged, so that the adsorption capacity is stronger than that of common glass, and the residual grinding powder on the surface of the processed sapphire is difficult to remove. Meanwhile, the existing sapphire cleaning agent on the market has poor removal effect on the grinding powder and the polishing solution, and the service life is short.

Therefore, the development of cleaning agents is of great significance to the production and processing of sapphire.

Disclosure of Invention

The invention aims to provide a cleaning agent to solve the technical problems in the prior art.

In order to achieve the above object, the present invention provides a cleaning agent comprising: inorganic base, organic base, dispersant, chelating agent, anionic surfactant, cationic surfactant and solubilizer, wherein the solvent is water; wherein the cationic surfactant is a quaternary ammonium salt type cationic surfactant which is easily soluble in water.

Further, the cleaning agent is prepared from the following components in percentage by weight: 5-10% of inorganic base, 5-10% of organic base, 5-8% of dispersing agent, 10-20% of chelating agent, 5-8% of anionic surfactant, 1-3% of cationic surfactant, 2-9% of solubilizer and 35-65% of water.

Further, the inorganic base is one or two of sodium hydroxide and potassium hydroxide; the organic alkali is one or two of triethanolamine and monoethanolamine.

Further, the dispersant is one or more of sodium hexametaphosphate, methylene dinaphthalene sulfonate, polyacrylamide and fatty acid polyethylene glycol ester; the chelating agent is one or two of sodium gluconate, sodium citrate and tetrasodium ethylene diamine tetraacetate; the solubilizer is one of octenyl succinic acid glycoside and polyoxyethylene sorbitan ester.

Further, the anionic surfactant is one or more of coconut methyl monoethanolamide, alkyl diphenyl ether disulfonate, fatty alcohol-polyoxyethylene ether sulfate and sodium dodecyl sulfate.

Further, the quaternary ammonium salt cationic surfactant is one or more of methyl trihydroxyethyl ammonium methyl sulfate, dimethyl octadecyl hydroxyethyl ammonium nitrate, hexadecyl bis hydroxyethyl methyl ammonium chloride and dodecyl trimethyl ammonium chloride.

The invention also provides a preparation method of the cleaning agent, which comprises the following steps:

1) preparing raw materials according to the proportion; adding water into a reaction kettle, then sequentially adding inorganic base, organic base, a dispersing agent and a chelating agent, and stirring and dispersing under normal pressure until the particles are completely dissolved;

2) after the temperature is reduced to 50 ℃, sequentially adding an anionic surfactant, a cationic surfactant and a solubilizer, and stirring for 3-4H under normal pressure;

3) stopping stirring and standing for 2-3H, cooling the liquid to room temperature, and obtaining the transparent liquid.

The invention also provides a cleaning process for cleaning the sapphire to be cleaned in the ultrasonic cleaning machine, which comprises the following steps:

ultrasonic cleaning with citric acid solution heated to 65-80 deg.C;

ultrasonic cleaning with the cleaning agent heated to 65-80 deg.C;

spraying with normal temperature water;

ultrasonic cleaning with water heated to 65-80 deg.C;

the sapphire is dried at the temperature of 100-110 ℃.

Furthermore, the dosage of the citric acid in the first step is 3-8% of the total water amount in the water tank of the ultrasonic cleaning machine.

Furthermore, the amount of the cleaning agent in the second step is 5-10% of the total water amount in the water tank of the ultrasonic cleaning machine; preferably 8%.

The invention has the following beneficial effects:

(1) the cleaning agent provided by the invention is mainly suitable for cleaning sapphire, comprises anionic surfactant and cationic surfactant in a specific ratio, and the anionic surfactant and the cationic surfactant are matched with each other due to strong electrostatic interaction between ions of the anionic surfactant and the cationic surfactant, so that surface active molecules in a solution are more easily aggregated to form micelles, and a mixture has higher surface activity than a single component. In theory, the cationic surfactant can be used in combination with a cationic surfactant and a nonionic surfactant, and is not suitable for use in combination with an anionic surfactant. However, the invention adopts the anionic surfactant and the cationic surfactant which contain specific proportions, the anionic surfactant and the cationic surfactant can not react with each other to generate other substances, and after the anionic surfactant and the cationic surfactant are compounded, because of strong electric attraction between positive ions and negative ions, two nonpolar groups form a dovetail structure which has smaller sectional area compared with a single anionic surfactant and single cationic surfactant, the micelle is easier to form, and the cleaning effect is higher in surface activity and better. When the cationic surfactant is less than 1%, the whole surface active amount is reduced, and the cleaning efficiency is reduced after dilution, so that the requirement of the cleaning agent cannot be met; when the cationic surfactant is more than 3 percent, the solution becomes turbid or pearly or even precipitates due to the strong adsorption force between anions and cations and reaches the critical micelle concentration, so that the antistatic effect of the cationic surfactant is lost. When the anionic surfactant is less than 5%, the total surface active amount is reduced, the cleaning efficiency is reduced, and the mass ratio to the cationic surfactant approaches to 1: 1, the critical micelle concentration of the mixed solution is easily reached, and the solution becomes turbid or pearlescent reaction or even precipitation occurs. When the anionic surfactant is more than 8 percent, the high-concentration surfactant undergoes salting-out reaction under the condition of high alkali, the solution is turbid, and a uniform system cannot be obtained.

(2) Because the surface of the sapphire has negative charges, a proper amount of cationic surfactant is added into the cleaning agent provided by the invention, and the cationic surfactant has antistatic property and can reduce the surface charge of the sapphire, thereby reducing the surface adsorption capacity of the sapphire and improving the cleaning efficiency. The cationic surfactant has the function of forming an adsorption film with the hydrophobic groups facing outwards on the surface, wherein the adsorption film has the hydrophobic function, and simultaneously has the positive electricity property, so that the surface conductivity is increased, and the adsorption film has the antistatic function. Meanwhile, the selected cationic surfactant is a quaternary ammonium salt surfactant which can be directly dissolved in water and can resist certain pH value, can be dissolved in an acid solution and an alkaline solution, and has good compatibility with other types of surfactants, so that the cleaning agent disclosed by the invention becomes a uniform, clear and transparent solution system and cannot generate side effects on inorganic alkali and organic alkali in the system. Compared with the condition that the amine salt type cationic surfactant is only dissolved in an acid solution, under the alkaline condition, the amine salt is easy to react with alkali to generate free amine so as to reduce the solubility of the amine salt, the quaternary ammonium salt type cationic surfactant selected by the invention is mutually matched with other components, and has a proper cleaning effect. The cleaning agent provided by the invention adopts specific components and proportions, so that the addition amount of the cleaning agent is low during use, the cleaning agent is easy to rinse, the grinding powder and the polishing solution on the surface of the sapphire can be effectively removed, and the problem of strong adsorption capacity of the surface of the sapphire is solved.

(3) The invention also provides a cleaning process, which utilizes the acidity and chelating capacity of citric acid to ensure that most of the ground powder and the polishing solution on the surface of the cleaning agent fall off and are left in the first tank, namely the sapphire is pretreated, so that the service life of the cleaning agent can be greatly prolonged, and then the ultrasonic cleaning of the alkaline cleaning agent can quickly wet, loosen and soften stubborn dirt on the surface of the cleaning agent caused by charge adsorption so as to separate from the surface. The inspection qualification rate of the product after cleaning is more than 98%, the process is simple, the cleaning effect can be kept more than 24H by single addition, and the cleaning agent can be controlled by a full-automatic machine.

In addition to the objects, features and advantages described above, other objects, features and advantages of the present invention are also provided. The present invention will be described in further detail below.

Detailed Description

The following is a detailed description of embodiments of the invention, but the invention can be implemented in many different ways, as defined and covered by the claims.