阅读说明：本技术 半导体器件检查方法 (Semiconductor device inspection method ) 是由 松本彻 越川一成 于 2018-05-14 设计创作，主要内容包括：本发明的半导体器件检查方法是进行被检查体即半导体器件的检查的方法,且包含以下步骤：第1步骤,其将辐射率为0.9以上且300nm至2000nm的波长中的光的透过率为60％以上的粘合胶带贴附于半导体器件的被检查面；第2步骤,其检测来自被检查面中的包含贴附有粘合胶带的面的区域的光,而取得第1图案图像；第3步骤,其对贴附有粘合胶带的半导体器件输入电信号；第4步骤,其在输入电信号的状态下,检测与来自包含贴附有粘合胶带的面的区域的热辐射相应的光,而取得第1发热图像；及第5步骤,其将第1图案图像与第1发热图像重叠。(The semiconductor device inspection method of the present invention is a method for inspecting a semiconductor device as an object to be inspected, and includes the steps of: a step 1 of attaching an adhesive tape having an emissivity of 0.9 or more and a transmittance of light of 60% or more in a wavelength of 300nm to 2000nm to a surface to be inspected of a semiconductor device; a 2 nd step of detecting light from a region including a surface to which an adhesive tape is attached, out of the surfaces to be inspected, and acquiring a 1 st pattern image; a 3 rd step of inputting an electric signal to the semiconductor device to which the adhesive tape is attached; a 4 th step of detecting light corresponding to heat radiation from a region including a surface to which an adhesive tape is attached in a state where an electric signal is input, and acquiring a 1 st heat generation image; and a 5 th step of overlapping the 1 st pattern image with the 1 st heat generation image.)

1. A semiconductor device inspection method, wherein,

a semiconductor device inspection method for inspecting a semiconductor device as an object to be inspected, includes:

a step 1 of attaching an adhesive tape having an emissivity of 0.9 or more and a transmittance of light of 60% or more in a wavelength of 300nm to 2000nm to a surface to be inspected of the semiconductor device;

a 2 nd step of detecting light from a region of the surface to be inspected including a surface to which the adhesive tape is attached, and acquiring a 1 st pattern image;

a 3 rd step of inputting an electric signal to the semiconductor device to which the adhesive tape is attached;

a 4 th step of acquiring a 1 st heat generation image by detecting light corresponding to heat radiation from the region in a state where the electric signal is input; and

a 5 th step of overlapping the 1 st pattern image with the 1 st heat generation image.

2. The semiconductor device inspection method according to claim 1,

the semiconductor device has an electrode for inputting the electric signal on the side of the inspection face,

in the step 1, the adhesive tape is attached to the surface to be inspected so that at least a part of the electrode is exposed.

3. The semiconductor device inspection method according to claim 1 or 2,

in the step 1, the adhesive tape is attached to the surface to be inspected so as to include regions having emissivity different from each other.

4. The semiconductor device inspection method according to any one of claims 1 to 3,

further comprising:

a 6 th step of detecting light corresponding to heat radiation of the semiconductor device in a state where the electric signal has been input to the semiconductor device before the adhesive tape is attached to obtain a 2 nd heat generation image,

in the 1 st step, the adhesive tape is attached so as to include a heat generation source of the semiconductor device based on the 2 nd heat generation image.

5. The semiconductor device inspection method according to claim 4,

further comprising:

a 7 th step of detecting light from the semiconductor device before attaching the adhesive tape to obtain a 2 nd pattern image,

in the 1 st step, the adhesive tape is attached so as to include a heat generation source of the semiconductor device based on an image in which the 2 nd pattern image and the 2 nd heat generation image overlap each other.

6. The semiconductor device inspection method according to any one of claims 1 to 5,

the surface of the adhesive tape opposite to the surface attached to the surface to be inspected has irregularities.

7. The semiconductor device inspection method according to any one of claims 1 to 5,

the adhesive tape is attached to the surface to be inspected by a pressure-sensitive adhesive applied to the adhesive tape.

8. The semiconductor device inspection method according to claim 1,

in the 2 nd step, an image captured by an infrared camera is acquired as the 1 st pattern image.

9. The semiconductor device inspection method according to claim 1,

in the 2 nd step, the pattern image 1 is acquired by detecting the reflected light from the region with a photodetector.

Technical Field

The invention relates to a semiconductor device inspection method.

Background

Patent document 1 describes a method of determining the position of a heat source generated in a semiconductor device. In this method, an infrared sensor is used to photograph a semiconductor device while applying an electric signal to the semiconductor device, and the temperature distribution of the semiconductor device is detected from the photographed image.

Disclosure of Invention

Problems to be solved by the invention

In the conventional method as described above, even if there is a portion generating heat inside the semiconductor device, the detection accuracy of the heat ray (heat radiation) may be lowered by the material constituting the surface of the semiconductor device. In particular, when the surface of the semiconductor device is covered with metal, the amount of radiated heat rays is easily reduced.

The invention provides a semiconductor device inspection method capable of improving detection accuracy of a hot wire.

Means for solving the problems

A semiconductor device inspection method according to an aspect of the present invention is an inspection method for inspecting a semiconductor device as an object to be inspected, and includes the steps of: a step 1 of attaching an adhesive tape having an emissivity (emissivity) of 0.9 or more and a transmittance of light of 60% or more at a wavelength of 300nm to 2000nm to a surface to be inspected of a semiconductor device; a 2 nd step of detecting light from a region including a surface to which an adhesive tape is attached, out of the surfaces to be inspected, and acquiring a 1 st pattern image; a 3 rd step of inputting an electric signal to the semiconductor device to which the adhesive tape is attached; a 4 th step of detecting light corresponding to heat radiation from a region including a surface to which an adhesive tape is attached in a state where an electric signal is input, and acquiring a 1 st heat generation image; and a 5 th step of overlapping the 1 st pattern image with the 1 st heat generation image.

In the semiconductor device inspection method as described above, the heat source generates heat in the semiconductor device due to the input of the electric signal. Heat generation occurs at a defective portion in, for example, a semiconductor device. The 1 st heat generation image of the inspected surface is superimposed on the 1 st pattern image, whereby the heat generation site of the semiconductor device can be specified. Here, by attaching an adhesive tape having a high emissivity of 0.9 or more to the surface to be inspected, the emissivity of the surface to be inspected is uniformized at a high value regardless of the material of the surface of the semiconductor device. Further, since the adhesive tape easily transmits light, the 1 st pattern image of the surface to be inspected can be obtained in a state where the adhesive tape is attached. Therefore, the accuracy of detecting the heat ray can be improved, and the heat generation position can be specified with high accuracy.

In addition, in one aspect, the semiconductor device may have an electrode for inputting an electric signal on the side of the surface to be inspected, and in the 1 st step, the adhesive tape may be attached to the surface to be inspected so that at least a part of the electrode is exposed. According to this configuration, the electrical signal can be easily applied to the semiconductor device in a state where the adhesive tape is attached.

In one aspect, in step 1, an adhesive tape may be attached to the surface to be inspected so as to include regions having different emissivity from each other. At this time, the emissivity of the area to which the adhesive tape is attached can be uniformized.

In addition, in an aspect, there may be further included a 6 th step of obtaining a 2 nd heat generation image by detecting light corresponding to heat radiation of the semiconductor device in a state where an electric signal has been input to the semiconductor device before attaching the adhesive tape, and in the 1 st step, the adhesive tape is attached so as to include a heat generation source of the semiconductor device based on the 2 nd heat generation image. The adhesive tape can be attached so as to include the heat-generating source by previously shrinking the heat-generating source based on the 2 nd heat-generating image.

In one aspect, the method may further include a 7 th step of acquiring a 2 nd pattern image by detecting light from the semiconductor device before attaching the adhesive tape, and in the 1 st step, the adhesive tape may be attached so as to include the heat generation source of the semiconductor device based on an image in which the 2 nd pattern image and the 2 nd heat generation image overlap with each other. By using an image in which the 2 nd pattern image and the 2 nd heat generation image overlap with each other, the contraction of the heat generation position can be easily performed.

In addition, in an aspect, a surface of the adhesive tape opposite to the surface attached to the surface to be inspected may have irregularities. By having the unevenness, the reflectance of the surface of the adhesive tape becomes low. This can prevent the excessive light reflected on the surface of the adhesive tape from entering the imaging device.

In addition, in one aspect, the adhesive tape may be attached to the inspected surface by a pressure-sensitive adhesive applied to the adhesive tape. By using the pressure-sensitive adhesive, the adhesive tape can be easily peeled off after, for example, the inspection is finished.

In one aspect, in the 2 nd step, an image captured by the infrared camera may be acquired as the 1 st pattern image. In this case, the pattern image and the heat generation image can be acquired by the same infrared camera.

In one aspect, in the 2 nd step, the pattern image 1 may be acquired by detecting reflected light from a region including a surface to which the adhesive tape is attached with a photodetector. In this case, a pattern image with higher accuracy can be easily obtained.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the semiconductor device inspection method of an aspect, the detection accuracy of the hot wire can be improved.

Drawings

Fig. 1 is a configuration diagram of a semiconductor device inspection apparatus.

Fig. 2 is a flowchart showing a semiconductor device inspection method of one embodiment.

Fig. 3 is a schematic view showing a measurement image obtained in the semiconductor device inspection method.

Fig. 4 is a schematic view showing a measurement image obtained in the semiconductor device inspection method.

Fig. 5 is a schematic view showing a measurement image obtained in the semiconductor device inspection method.

Fig. 6 is a schematic view showing a measurement image obtained in the semiconductor device inspection method.

Fig. 7 is a flowchart showing a semiconductor device inspection method of a modification.

Detailed Description

The embodiments will be described in detail below with reference to the drawings. For convenience of explanation, substantially the same elements will be denoted by the same reference numerals, and explanations thereof will be omitted.

In the semiconductor device inspection method of the present embodiment, a heat source in a semiconductor device is detected using a semiconductor device inspection apparatus. By detecting the position of the heat source, for example, failure analysis of the semiconductor device can be performed. First, an example of a semiconductor device inspection apparatus will be described. Fig. 1 is a block diagram showing a schematic configuration of a semiconductor device inspection apparatus according to one embodiment. The semiconductor device inspection apparatus 1 detects the position of a heat generating point of a semiconductor device D as an object to be inspected, and analyzes a failure. The semiconductor device D is, for example, an individual semiconductor element (discrete element), an optoelectronic element, a sensor/actuator, a logic LSI (Large Scale Integrated Circuit), a memory element, a linear IC (Integrated Circuit), or a hybrid device of these elements. The individual semiconductor devices include diodes, power transistors, and the like. The logic LSI is constituted by a transistor having a MOS (Metal-Oxide-Semiconductor) structure, a transistor having a bipolar structure, and the like. In addition, the semiconductor device D may be a package including a semiconductor device, a composite substrate, or the like.

The semiconductor device inspection apparatus 1 is configured to include: sample stage 10, stage driving unit 12 that drives sample stage 10, voltage applying unit (electric signal supplying unit) 14, imaging device 18, control unit 20, and image processing unit 30.

Semiconductor device D is mounted on sample stage 10. Sample stage 10 is configured to be driven by stage driving unit 12 in the X-axis direction, the Y-axis direction (horizontal direction), and the Z-axis direction (vertical direction), respectively. This allows focusing of image pickup with respect to the semiconductor device D, alignment of image pickup positions, and the like. An imaging device 18 is provided above sample stage 10. In a state where semiconductor device D is mounted on sample stage 10, the upper surface of semiconductor device D faces the side of imaging device 18. At this time, the upper surface of the semiconductor device D becomes the inspection target surface Da (see fig. 3).

The imaging device 18 can acquire a two-dimensional image of the semiconductor device D. In the present embodiment, the imaging device 18 detects infrared rays corresponding to the heat radiation from the inspection surface Da of the semiconductor device D, and acquires a heat generation image based on the intensity of the infrared rays. The heat generation image is an image in which the distribution of the heat generation amount of the inspection target surface Da is visualized. The heat generation image may be an image displayed with, for example, a gray scale corresponding to the amount of heat generation. The heat radiation from the inspected surface Da is caused by a heat source in the semiconductor device D. The imaging device 18 detects light from the inspection surface Da of the semiconductor device D and acquires a pattern image. The pattern image may be an image showing the appearance of the inspected surface Da of the semiconductor device D. The imaging device 18 may be, for example, an infrared camera (e.g., InSb camera) that images infrared rays (heat rays) generated from a heat source of the semiconductor device D. At this time, the appearance of the semiconductor device D photographed by the infrared camera is acquired as a pattern image. The imaging device 18 may include a photodetector such as a two-dimensional camera in addition to the infrared camera, and may acquire a pattern image using the photodetector.

A light guide optical system 16 such as an objective lens for guiding an image of the surface of the semiconductor device D to the imaging device 18 is provided on the optical axis between the sample stage 10 and the imaging device 18. Further, a drive mechanism such as an XYZ stage may be provided in the light guide optical system 16. For example, focusing for image pickup of the semiconductor device D, positional alignment of an image pickup position, and the like can be performed by the driving mechanism.

Voltage application unit 14 is electrically connected to an electrode of semiconductor device D arranged on sample stage 10. The voltage applying section 14 may apply an electric signal such as a current or a voltage signal to the semiconductor device D. In the present embodiment, the voltage application unit 14 applies an electrical signal necessary for causing the heat generation source to generate heat to an electronic circuit in the semiconductor device D. For example, the voltage applying unit 14 may apply a voltage signal that periodically increases and decreases as the bias voltage. Further, by modulating the voltage signal, lock-in detection by the image pickup device can be performed.

The control unit 20 controls the operations of the sample stage 10, stage driving unit 12, voltage applying unit 14, light guiding optical system 16, and imaging device 18. The control unit 20 includes an imaging control unit 21, a stage control unit 22, and a synchronization control unit 23.

The imaging control unit 21 controls the application operation of the voltage signal by the voltage application unit 14 and the image acquisition operation by the imaging device 18, thereby controlling the acquisition of the analysis image of the semiconductor device D. Further, stage control unit 22 controls the operations of sample stage 10 and stage drive unit 12 (the movement operation of semiconductor device D on sample stage 10). Further, the synchronization control unit 23 performs control for achieving necessary synchronization between the imaging control unit 21 and the stage control unit 22, and the image processing unit 30 provided for the imaging device 18.

The image processing unit 30 is image processing means for performing image processing necessary for failure analysis of the semiconductor device D on the image acquired by the imaging device 18. In the present embodiment, the image processing unit 30 can generate a superimposed image in which the heat generation image and the pattern image are superimposed. That is, the image processing unit 30 can receive the pattern image and the heat generation image data from the imaging device 18, and superimpose the heat generation image on the received pattern image. The image Processing Unit 30 is configured by a computer including, for example, a processor (CPU, Central Processing Unit), and a RAM (random access Memory), a ROM (Read Only Memory), an HDD (Hard disk drive), and the like as storage media. The image processing unit 30 executes processing of the processor with respect to data stored in the storage medium. The image processing unit 30 may be configured by a microcomputer, an FPGA (Field-Programmable Gate Array), a cloud server, a smart device, and the like. An input device 36 and a display device 37 are connected to the image processing unit 30. The input device 36 is constituted by, for example, a keyboard, a mouse, and the like, and is used for inputting information and operation instructions necessary for the image acquisition operation and the failure analysis operation of the semiconductor device inspection apparatus 1. The display device 37 is configured by, for example, a CRT display, a liquid crystal display, or the like, and is used for displaying various information such as an image acquired by the image processing unit 30. The image of the semiconductor device D acquired by the imaging device 18 may be input to the image processing section 30, and stored as necessary.

The image processing unit 30 may be realized by a single control device (e.g., a single computer) together with the control unit 20. Similarly, the input device 36 and the display device 37 connected to the image processing unit 30 function as an input device and a display device connected to the control unit 20 as well as the image processing unit 30.

Next, the method for inspecting a semiconductor device according to the present embodiment will be described. Fig. 2 is a flowchart showing a semiconductor device inspection method using the semiconductor device inspection apparatus 1. Fig. 3 is a schematic view showing a measurement image obtained in the semiconductor device inspection method. Fig. 3(a) shows a pattern image 101 of the semiconductor device D. Fig. 3(b) shows a heat generation image 102 of the semiconductor device D. Fig. 4 shows a superimposed image 103 in which the image of fig. 3(b) and the image of fig. 3(a) are superimposed. Fig. 5 is a schematic view showing a measurement image obtained in the semiconductor device inspection method. Fig. 5(a) shows a pattern image 104 of the semiconductor device D. Fig. 5(b) shows a heat generation image 105 of the semiconductor device D. Fig. 6 shows a superimposed image 106 in which the image of fig. 5(b) and the image of fig. 5(a) are superimposed.

In the semiconductor device inspection method of the present embodiment, the pattern image and the heat generation image of the semiconductor device D can be obtained in a state where the adhesive tape T is attached to the surface Da to be inspected of the semiconductor device D. In fig. 3 and 4, the adhesive tape T is not attached to the semiconductor device D, and in fig. 5 and 6, the adhesive tape T is attached to the semiconductor device D. The emissivity of the adhesive tape T used in the method is 0.9 or more. The emissivity may be 0.9 or more even in a part of the wavelength range of 2000nm to 6500nm at room temperature (5 ℃ C. -35 ℃ C. [41 ℃ C. -95 ℃ C. ]), for example. The light transmittance of the adhesive tape T is 60% or more at a wavelength of 300nm to 2000 nm. Further, the transmittance of light may be an average value of transmittance of wavelengths of 300nm to 2000 nm. The adhesive tape T is formed of a film-shaped base material containing a synthetic resin and a pressure-sensitive adhesive applied to one surface of the base material. Minute irregularities may be formed on the other surface of the substrate. Due to the irregularities formed on the other surface of the substrate, the surface is physically rough (rough), and a sanding effect is imparted to the surface. For example, the adhesive tape T is a so-called invisible adhesive tape having an acetate film as a base material.

In the semiconductor device inspection method, a semiconductor device D as an object to be inspected is mounted on the sample stage 10. Electrodes Db, Dc, and Dd electrically connected to electronic circuits in the semiconductor device D are provided on the surface Da to be inspected of the semiconductor device D (see fig. 3 (a)). The electrodes Db, Dc, Dd are made of a metal material such as aluminum. The electrodes Db, Dc, Dd are formed in a film shape so as to cover a part of the surface to be inspected. In the inspection target surface Da, the region De not covered with the electrodes Db, Dc, and Dd is formed of a resin material such as polyimide having high insulation.

As shown in fig. 2, in the present method, before the adhesive tape T is attached, light from the semiconductor device D mounted on the sample stage 10 is detected, and a pattern image (2 nd pattern image) 101 of the semiconductor device D is acquired (step S10 (7 th step)). In step S10, for example, the voltage application unit 14 is electrically connected to the electrodes Db and Dc of the semiconductor device D positioned on the sample stage 10. In this state, the relative position between semiconductor device D on sample stage 10 and imaging device 18 is adjusted by the driving of stage driving unit 12. The pattern image 101 of the semiconductor device D is acquired by the imaging device 18 in a state adjusted to be able to image the inspection surface Da of the semiconductor device D. In the example of the pattern image 101 shown in fig. 3(a), a needle 14a for voltage application provided in the voltage application unit 14 is shown.

Then, in a state where an electric signal is applied to the semiconductor device D before the adhesive tape T is attached, light corresponding to heat radiation of the semiconductor device D is detected, and a heat generation image (2 nd heat generation image) 102 is acquired (step S11, step S12 (6 th step)). In step S11, a current or voltage signal is applied as an electric signal from the voltage applying section 14 to the semiconductor device D. By applying an electric signal, a hot wire is generated as a heat source at a failure site in an electronic circuit in the semiconductor device D. The heat generation image 102 is acquired by imaging the inspection surface Da using an imaging device 18 such as an infrared camera (see fig. 3 b). In the example of fig. 3(b), a part of the heat diffused from the heat generation source is detected and shown as heat generation regions 102a, 102 b.

Then, a superimposed image 103 in which the pattern image 101 and the heat generation image 102 are superimposed on each other is acquired (step S13). That is, the pattern image 101 acquired in step S10 and the heat generation image 102 acquired in step S12 are superimposed on each other by the image processing unit 30. In the present embodiment, the heat generation image 102 is superimposed on the pattern image 101. In the superimposed image 103 shown in fig. 4, the heat ray from the region De made of the resin material is detected outside the region covered with the electrode Dd. It can be estimated that the heat generation source is located below the electrode Dd from the position of the detected hot wire. In the example of fig. 4, it can be estimated that a heat source is present at a position of the electrode Dd on the heat generation regions 102a and 102b side. In this manner, by referring to the superimposed image 103, the position of the heat generation source of the semiconductor device D can be roughly determined.

Then, the adhesive tape T is attached to the surface Da to be inspected of the semiconductor device D (step S14 (step 1)). In the present embodiment, the adhesive tape T is attached so as to include a heat generation source of the semiconductor device D. In step S14, the adhesive tape T can be attached so as to include the heat generation source of the semiconductor device D based on the superimposed image 103 acquired in step S13. As shown in fig. 5(a), an adhesive tape T is attached to the electrode Dd at positions on the heat generating regions 102a and 102b side. Further, adhesive tapes T are also attached to the positions of the heat generating regions 102a and 102 b.

In step S14, the adhesive tape T may be attached to the inspection target surface Da so that at least a part of the electrode of the semiconductor device D is exposed. As shown in fig. 5(a), for example, the portions of the electrodes Db, Dc, and Dd to be connected to the pair of needles of the voltage application unit 14 can be exposed. In step S14, the adhesive tape T may be attached to the surface Da to be inspected so as to include regions having different emissivity from each other. In the present embodiment, the adhesive tape T is attached so as to span the electrode Dd having a low emissivity and the region De of the resin material having a higher emissivity than the electrode Dd. In the illustrated example, the adhesive tape T is attached obliquely so as to be inclined with respect to the peripheral edge of the semiconductor device D in a plan view. In addition, when the adhesive tape T is attached, air does not enter between the adhesive tape T and the semiconductor device D in order to suppress a decrease in heat conduction due to the air layer. The semiconductor device D to which the adhesive tape is attached is mounted on the sample stage 10 again.

Then, light from an area including the surface to which the adhesive tape T is attached in the inspected surface Da is detected, and a pattern image (1 st pattern image) is acquired (step S15 (2 nd step)). In step S15, voltage application unit 14 is electrically connected to electrodes Db and Dc of semiconductor device D positioned on sample stage 10 again. In this state, the relative position between semiconductor device D on sample stage 10 and imaging device 18 is adjusted by the driving of stage driving unit 12. The pattern image 104 of the semiconductor device D is acquired by the imaging device 18 in a state adjusted to be able to image the inspection surface Da of the semiconductor device D. Since the adhesive tape T of the present embodiment transmits light in a wavelength band detectable by the imaging device 18, the pattern can be confirmed even in the pattern image 104 acquired in a state where the adhesive tape T is attached.

Then, an electric signal is input to the semiconductor device D to which the adhesive tape T is attached (step S16 (step 3)). Then, in a state where the electric signal is input, light corresponding to heat radiation from a region including the surface to which the adhesive tape T is attached is detected, and a heat generation image (1 st heat generation image) 105 is acquired (step S17 (4 th step)). In step S16, a current or voltage signal is applied as an electric signal from the voltage applying section 14 to the semiconductor device D. By applying an electric signal, a hot wire is generated in an electronic circuit in the semiconductor device D using the failure portion as a heat source. The heat generation image 105 is obtained by imaging the inspection surface Da to which the adhesive tape T is attached by using the imaging device 18. The heat generation image 105 displays heat generation regions 105a and 105b corresponding to the heat generation regions 102a and 102b, and a heat generation region 105c not shown in the heat generation image 102. In the present embodiment, the acquisition of the image by the imaging device 18 is ended by the acquisition of the heat generation image 105 in step S17.

Then, the pattern image 104 acquired in step S15 and the heat generation image 105 acquired in step S17 are superimposed by the image processing unit 30, and a superimposed image 106 is acquired (step S18 (step 5)). As shown in fig. 6, in the present embodiment, the heat generation image 105 is superimposed on the pattern image 104. In the figure, the heat generation region 105c overlaps the portion covered with the electrode Dd. The heat generating region 105c overlaps with the region to which the adhesive tape T is attached. For example, based on the superimposed image 106, it can be analyzed that the position corresponding to the heat generation region 105c is the heat generation source. The adhesive tape T can be peeled off from the semiconductor device D at an arbitrary timing after the image acquisition by the imaging device 18 is completed (step S19).

In the semiconductor device inspection method described above, the heat source generates heat in the semiconductor device D due to the input of the electric signal. The heat generation as described above is generated at a defective portion of an electronic circuit in the semiconductor device D, for example. Therefore, the pattern image 104 of the inspected surface Da is superimposed on the heat generation image 105, whereby the heat generation source of the semiconductor device D can be specified. However, the emissivity of an electrode formed of metal is low. When the position of the heat generation source and the position of the electrode overlap, the intensity of the emitted infrared ray decreases. Thus, there is a case where the heat generation source does not appear in the heat generation image. In the present embodiment, an adhesive tape T having a high emissivity of 0.9 or more is attached to the inspected surface Da. By attaching the adhesive tape T to the inspection surface Da in this manner, the emissivity of the region to which the adhesive tape T is attached is made uniform at a high value. Thus, even when the position of the heat source and the position of the electrode overlap, the emitted infrared ray can be detected. Further, since the adhesive tape T easily transmits light, the pattern image 104 of the surface to be inspected can be acquired while the adhesive tape T is attached to the surface to be inspected. Therefore, the accuracy of detecting the heat ray can be improved, and the heat generation position can be specified with high accuracy.

In step S14, the adhesive tape T may be attached to the surface Da to be inspected so that at least a part of the electrode is exposed. With this configuration, the voltage applying unit 14 can be connected to the semiconductor device D with the adhesive tape T attached. The electrical signal can be easily applied.

In step S14, the adhesive tape T may be attached to the surface Da to be inspected so as to include regions having different emissivity from each other. For example, the regions having different emissivity are a portion covered with the electrode and a portion made of a resin material. At this time, the emissivity of the area to which the adhesive tape T is attached can be uniformized.

Further, by acquiring the heat generation image 102 before the adhesive tape T is attached, the adhesive tape T can be attached so as to include the heat generation source of the semiconductor device D based on the heat generation image 102 in step S14. By limiting the heat source in advance based on the heat generation image 102 in this manner, the adhesive tape T can be attached so as to reliably include the heat source. At this time, by acquiring the pattern image 101 before the adhesive tape T is attached, the adhesive tape T can be attached based on the superimposed image 103 in step S14. By using the superimposed image 103, the heat generation source can be easily narrowed down.

The surface of the adhesive tape T opposite to the surface to be adhered to the inspected surface Da may have irregularities. By having the unevenness, a sanding effect is given to the surface of the adhesive tape T. The surface of the adhesive tape T becomes low in reflectance due to the sanding effect. This can prevent excessive light reflected by the surface of the adhesive tape T from entering the imaging device 18.

The adhesive tape T is attached to the surface Da to be inspected with a pressure-sensitive adhesive applied to the adhesive tape T. By using the pressure-sensitive adhesive, the adhesive tape T can be easily peeled off after, for example, the inspection is finished.

In addition, a pattern image of the semiconductor device D can be captured by an infrared camera. In this case, the pattern image and the heat generation image can be acquired by the same infrared camera. The configuration of the imaging device 18 can be simplified.

Further, reflected light from a region including the inspection target surface Da is detected by a photodetector, and a pattern image is acquired. In this case, a pattern image with higher accuracy can be easily obtained as compared with an infrared camera.

While the embodiments have been described in detail with reference to the drawings, the specific configurations are not limited to the embodiments.

In the above embodiment, the position of the heat generation source is roughly estimated by acquiring the superimposed image in advance, but the present invention is not limited to this. Fig. 7 is a flowchart showing a semiconductor device inspection method of a modification. In this semiconductor device inspection method, first, an adhesive tape T is attached to the surface to be inspected of the semiconductor device (step S20). In the present embodiment, the adhesive tape T is attached while exposing only the portions of the electrodes of the surface to be inspected of the semiconductor device D to be connected to the pair of needles of the voltage applying unit 14. Thus, the adhesive tape T is attached so as to substantially surely include the heat source without acquiring a superimposed image in advance.

Then, light from the surface to be inspected is detected, and a pattern image is acquired (step S21). In step S21, voltage application unit 14 is electrically connected to the electrodes of semiconductor device D positioned on sample stage 10. In this state, the image pickup device 18 acquires the pattern image 104 of the semiconductor device D.

Then, an electric signal is input to the semiconductor device D to which the adhesive tape T is attached (step S22), and the heat generation image 105 is acquired in a state where the electric signal is input (step S23). In the present embodiment, the acquisition of the image by the imaging device 18 is ended by the acquisition of the heat generation image 105 in step S23.

Then, the pattern image 104 acquired in step S21 and the heat generation image 105 acquired in step S23 are superimposed by the image processing unit 30, and a superimposed image 106 is acquired (step S24). By analyzing the superimposed image 106, the heat generating site can be determined. After the inspection, the adhesive tape T is peeled off from the semiconductor device D (step S25).

In the above-described embodiment, an example in which a two-dimensional image is acquired by the imaging device 18 such as an infrared camera is shown, but the present invention is not limited to this. For example, the imaging device may be configured by a light source such as a laser or a superluminescent diode, an optical scanner such as a galvanometer that scans the surface to be inspected two-dimensionally with light from the light source, and a photodetector such as a photodiode or an avalanche photodiode that detects reflected light from the surface to be inspected. At this time, the heat generation image may be generated based on a change in the reflectance of the surface to be inspected.

[ notation ] to show

1 semiconductor device inspection apparatus

101 pattern image (2 nd pattern image)

102 heating image (2 nd heating image)

103 overlapping images

104 Pattern image (1 st pattern image)

105 heating image (1 st heating image)

106 overlapping images

D semiconductor device

Da face to be inspected

Db, Dc, Dd electrodes

T adhesive tape.