阅读说明：本技术 一种宽角度内反保偏膜元器件的设计及其制备 (Design and preparation of wide-angle internal reflection polarization-maintaining film component ) 是由 黄文华 马新建 吴先云 廖洪平 *** 张星 陈伟 于 2019-10-30 设计创作，主要内容包括：本发明涉及一种(1260-1750)nm宽角度内反保偏膜元器件的设计及其制备。本发明的目的在于提供一种宽角度入射时,在光纤通信全波段(1260-1750)nm范围内实现大于98%的内反射率,同时保持出入射光偏振位相差不变的光学元器件；它包括一个等腰直角棱镜(1)、出入射面增透膜(2)、内反保偏膜(3)。本发明具有简易的结构设计、易于制备、使用方便等优势。(The invention relates to a design and a preparation of a (1260-1750) nm wide-angle internal reflection polarization-maintaining film component. The invention aims to provide an optical component which realizes the internal reflectivity of more than 98 percent in the range of 1260-; the reflection type prism comprises an isosceles right-angle prism (1), an antireflection film (2) on an incident surface and an internal reflection polarization-maintaining film (3). The invention has the advantages of simple structure design, easy preparation, convenient use and the like.)

1. A design and preparation of (1260-: the reflection type prism consists of an isosceles right-angle prism (1), an incident surface and exit surface antireflection film (2) and an inner reflection polarization-preserving film (3); the method is characterized in that: the inner reverse polarization-maintaining film (3) is formed by combining three different film materials of Ag, SiO2 and Ta2O5 by adopting different film layer thicknesses, the inner reverse polarization-maintaining film is composed of 5 layers of films, and the film layers of the 5 layers of films sequentially comprise from air to the isosceles right-angle prism (1): the film comprises a 1 st layer, a SiO2 film layer (11), a2 nd layer, an Ag film layer (12), a 3 rd layer, a SiO2 film layer (11), a 4 th layer, a Ta2O5 film layer (13), a 5 th layer and a SiO2 film layer (11).

2. The design and preparation of a (1260-1750) nm wide-angle reverse polarization-preserving film component as claimed in claim 1, wherein: the 1 st layer, the SiO2 film layer (11) with a thickness of 40-70nm, the 2 nd layer, the Ag film layer (12) with a thickness of 120-130nm, the 3 rd layer, the SiO2 film layer (11) with a thickness of 255-265nm, the 4 th layer, the Ta2O5 film layer (13) with a thickness of 28-35 nm, the 5 th layer, and the SiO2 film layer (11) with a thickness of 95-105 nm.

3. The design and preparation of a (1260-1750) nm wide-angle reverse polarization-preserving film component as claimed in claim 1, wherein: the refractive index of the optical glass substrate is as follows: 1.45-1.56.

4. The design and preparation of a (1260-1750) nm wide-angle reverse polarization-preserving film component as claimed in claim 1, wherein: the glass substrate adopts K9 or D236T or B270 or BK 7.

5. Design and preparation of a (1260-1750) nm wide angle reverse polarization-preserving film component as claimed in any of claims 1-4, wherein: the preparation process comprises the following steps:

preparing a glass substrate: k9

Selecting Ag, SiO2 and Ta2O5 as coating materials;

cleaning the surface of the glass substrate: putting the polished glass substrate into an ultrasonic cleaner for cleaning, then drying, loading a clamp and putting the glass substrate into a film coating machine;

vacuumizing to make the background vacuum degree reach 2 x 10-3 Pa;

etching the glass substrate for 5-10 minutes by using a Hall ion source;

after the etching of the surface of the glass substrate in the step ⑤ is completed, SiO2 and Ta2O5 film layers are deposited by alternately using a Hall ion source assisted electron beam evaporation method from near to far in sequence from the glass substrate, but the ion source is not used for assisting when a molybdenum boat is used for evaporating silver;

in the process of completing step ⑥, when each SiO2 film layer is plated, the deposition rate is controlled to be 0.5-0.8 nm/s, the oxygen charging amount is 15-25sccm, the ion beam voltage is 100-;

when the Ag film layer is evaporated, the deposition rate is controlled to be 0.4-0.7 nm/s;

when the Ta2O5 film is plated, the deposition rate is controlled to be 0.2-0.4 nm/s, the oxygen filling amount is controlled to be 15-25sccm, the ion beam voltage is 100-150V, and the ion beam current is 4-6A.

6. The design and preparation method of reverse polarization-maintaining film component device within a wide angle of (1260-1750) nm as claimed in claim 5, wherein in the step ⑤ of claim 5, when the Hall ion source is used to etch the glass substrate (1), the ion beam voltage is 100-150V and the ion beam current is 3-5A.

7. The design and preparation of a (1260-1750) nm wide-angle reverse polarization-preserving film component as claimed in claim 5, wherein: when the SiO2 film layer, the Ag film layer and the Ta2O5 film layer are plated, the revolution speed of the workpiece disc is controlled to be 20-25 r/min.

Technical Field

A design and preparation of (1260-.

Background

According to the maxwell equation set theory, when the light wave passes through the medium interface, the optical performance parameters inevitably generate sudden changes, and as a result, the light wave field is reestablished. This is particularly noticeable in the phase change of the reflected light. It can be deduced from the fresnel formula that when light waves are incident from an optically thinner medium to an optically denser medium, the light waves change with the incident angle, and at the brewster angle, the P polarization component has a primary phase jump, while the S polarization component remains unchanged; when the light wave is incident to the light thinning medium from the optical dense medium, the P polarization component has a jump not only at the Brewster angle but also at the total reflection critical angle; and the S-polarized component will also have a transition at the critical angle for total reflection. Therefore, when the light path needs to be changed, the polarization state of incident light and outgoing light needs to be corrected inevitably; especially when wide-angle and wide-band applications are required, more components are required, and thus unnecessary loss of light flux is caused.

The polarization maintaining film component is an important light path design component, can eliminate the influence of polarization phase difference caused by oblique incidence, and has strong practicability and strong market application requirements. Reported are: under single-angle incidence, the single-wavelength outgoing polarization phase difference of the element is unchanged by using the single-layer dielectric film. However, the polarization maintaining film component with wide wavelength and wide angle, especially the high reflection polarization maintaining film with full reflection angle, is not described in detail.

Disclosure of Invention

The invention aims to provide a wide-band wide-angle internal reflection polarization-preserving film component, which aims to enable the component to be applied to the full band of optical fiber communication and keep the polarization phase difference of incident light unchanged within a wide-angle range of +/-8 degrees (including the total reflection angle of a light beam); meanwhile, the invention can effectively reduce the design difficulty of the membrane system, reduce the processing cost and is easy to prepare; in addition, the invention also provides an internal reflection polarization-maintaining prism with good film layer firmness and higher reflectivity. The working wave band is (1260, 1750) nm covering the whole wave band of the optical fiber communication, the reflectivity is more than 98 percent, and the phase difference of S polarization and P polarization is controlled within the range of +/-2 degrees.

The invention is realized by the following steps: a (1260-; the internal reflection polarization-maintaining film is composed of 5 layers of films with different film thicknesses, namely Ag, SiO2 and Ta2O5, wherein the 5 layers of films sequentially comprise the following films from air to the isosceles right-angle prism (1): the film comprises a 1 st layer, a SiO2 film layer (11), a2 nd layer, an Ag film layer (12), a 3 rd layer, a SiO2 film layer (13), a 4 th layer, a Ta2O5 film layer (12), a 5 th layer and a SiO2 film layer (13).

The invention has the advantages that:

① selecting proper coating material and coating process, designing film structure with enough tolerance and easy control, selecting SiO2 film with strong bonding force with substrate material as bottom layer, selecting metal Ag film with small polarization separation to ensure phase difference of incident light not to change and provide high reflectivity, and finally using SiO2 film as protective layer of Ag film to improve the overall damage threshold of film.

② compared with a single-waveband single-angle internal polarization-preserving device, the (1260-1750) nm wide-angle internal polarization-preserving film component provided by the invention has the advantages of wide specific wave width, large angle, small sensitivity and the like, and has a wider application range.

Drawings

FIG. 1 is a schematic structural diagram of a (1260-1750) nm wide-angle reverse polarization-preserving film device provided by the present invention;

FIG. 2 is a schematic diagram of a structure of a polarization-maintaining film layer of a (1260-1750) nm wide-angle reverse polarization-maintaining film device provided by the present invention;

FIG. 3 is a 37 degree reflectance spectrum of the polarization maintaining film of the present invention;

FIG. 4 is a diagram of a 37 ° phase difference spectrum of the polarization maintaining film of the present invention;

FIG. 5 is a 45 degree reflectance spectrum of the polarization maintaining film of the present invention;

FIG. 6 is a diagram of a 45 DEG phase difference spectrum of the polarization maintaining film of the present invention;

FIG. 7 is a 53 degree reflectance spectrum of a polarization maintaining film according to the present invention;

FIG. 8 is a 53-degree phase difference spectrum of the polarization maintaining film of the present invention;

description of reference numerals: the film comprises a 1-glass substrate, a 2-polarization maintaining film, a 11-SiO 2 film layer, a 12-Ag film layer, a 13-SiO2 film layer, a 14-Ta2O5 film layer and a 15-SiO2 film layer (13).

Detailed Description

The invention is described in detail below with reference to the drawings and specific examples:

fig. 1 is a schematic structural diagram of a (1260-.

Fig. 2 is a schematic diagram of a film structure of a (1260-, 1750) -nm wide-angle anti-polarization-maintaining film component provided by the present invention, which is composed of 5 films with different film thicknesses of three different film materials of Ag, SiO2 and Ta2O 5. The film layers of the 5 layers of films sequentially comprise from air to the isosceles right-angle prism (1): the 1 st layer, the SiO2 film layer (11) with a thickness of 40-70nm, the 2 nd layer, the Ag film layer (12) with a thickness of 120-130nm, the 3 rd layer, the SiO2 film layer (11) with a thickness of 255-265nm, the 4 th layer, the Ta2O5 film layer (13) with a thickness of 28-35 nm, the 5 th layer, and the SiO2 film layer (11) with a thickness of 95-105 nm.

The glass device structure is an isosceles right-angle prism;

the glass substrate is K9;

the preparation method comprises the following specific steps:

① preparing a glass substrate;

② selecting Ag, SiO2 and Ta2O5 as coating materials;

③ cleaning the surface of the glass substrate, namely cleaning the polished glass substrate in an ultrasonic cleaner, drying, loading a fixture and then putting the fixture in a film coating machine;

④ vacuum pumping, making background vacuum degree reach 2 x 10-3 Pa;

⑤ the workpiece disc is started to rotate, and the revolution speed is controlled at 20-25 r/min.

⑥ the glass substrate is etched for 5-10 minutes by using a Hall ion source, the ion beam voltage is controlled at 100-150V, and the ion beam current is controlled at 3-5A.

⑦ after etching the glass substrate surface in step ⑥, depositing SiO2 and Ta2O5 film layers by using a Hall ion source assisted electron beam evaporation method alternately from near to far from the glass substrate, but not using an ion source for assisting when a molybdenum boat is used for evaporating silver;

⑧ in the process of completing step ⑦, when each SiO2 film is plated, the deposition rate is controlled to be 0.5-0.8 nm/s, the oxygen charging amount is 15-25sccm, the ion beam voltage is 100-150V, and the ion beam current is 4-6A;

when the Ag film layer is evaporated, the deposition rate is controlled to be 0.4-0.7 nm/s;

when the Ta2O5 film is plated, the deposition rate is controlled to be 0.2-0.4 nm/s, the oxygen charging amount is 15-25sccm, the ion beam voltage is 100-150V, and the ion beam current is 4-6A;

FIG. 3 shows a reflectance spectrum of a (1260-; as can be seen from the figure, the reflectivities are all larger than 98% in the (1260-.

FIG. 4 shows a reflectance spectrum of a (1260-; as can be seen from the figure, the phase difference is within the range of 180+/-2 ℃ in the (1260-.

FIG. 5 shows a 45 DEG reflectance spectrum of a (1260-1750) nm wide-angle anti-polarization-maintaining film device prepared by the present invention; as can be seen from the figure, the reflectivities are all larger than 98% in the (1260-.

FIG. 6 shows a 45 DEG reflectance spectrum of a (1260-1750) nm wide-angle anti-polarization-maintaining film device prepared by the present invention; as can be seen from the figure, the phase difference is within the range of 180+/-2 ℃ in the (1260-.

FIG. 7 shows a 53-degree reflectance spectrum of a (1260-, 1750) -nm wide-angle anti-polarization-preserving film device prepared by the present invention; as can be seen from the figure, the reflectivities are all larger than 98% in the (1260-.

FIG. 8 shows a 53-degree reflectance spectrum of a (1260-, 1750) -nm wide-angle anti-polarization-preserving film device prepared by the present invention; as can be seen from the figure, the phase difference is within the range of 180+/-2 ℃ in the (1260-.

The above-mentioned specific real-time is only explained in detail by taking 1260-, 1750-nm of the BK7 material as a technical solution, and the present invention is not limited to the above-mentioned embodiments, and any modification and replacement according to the principle of the present invention shall fall within the protection scope of the present invention.