阅读说明：本技术 辐射成像系统 (Radiation imaging system ) 是由 丹尼·拉普·延·李 于 2019-07-16 设计创作，主要内容包括：本发明公开了辐射成像系统。一种辐射成像系统包括辐射发射装置和辐射成像装置。所述辐射成像装置具有：带有顶表面和底表面的电绝缘层、在所述电绝缘层的顶表面上的顶电极、电耦接到所述电绝缘层的像素单元的阵列、以及连接到所述像素单元的阵列的晶体管的阵列。(The invention discloses a radiation imaging system. A radiation imaging system includes a radiation emitting device and a radiation imaging device. The radiation imaging apparatus has: the array of transistors includes an electrically insulating layer with a top surface and a bottom surface, a top electrode on the top surface of the electrically insulating layer, an array of pixel cells electrically coupled to the electrically insulating layer, and an array of transistors connected to the array of pixel cells.)

1. A radiation imaging apparatus comprising:

an electrically insulating layer having a top surface and a bottom surface;

a top electrode on the top surface of the electrically insulating layer; and

a plurality of pixel cells electrically coupled to the electrically insulating layer and in direct contact with the bottom surface of the electrically insulating layer.

2. The radiation imaging apparatus as set forth in claim 1, wherein each of the plurality of pixel cells includes a charge collection electrode.

3. The radiation imaging apparatus as defined in claim 2, wherein the charge collection electrode is disposed within the electrically insulating layer at the bottom surface of the electrically insulating layer.

4. The radiation imaging apparatus as claimed in claim 2, wherein each of said plurality of pixel cells further comprises a charge storage capacitor and at least one transistor.

5. The radiation imaging apparatus as claimed in claim 4, wherein the plurality of pixel cells are disposed on the bottom surface of the electrically insulating layer.

6. The radiation imaging apparatus as claimed in claim 4, wherein the transistor is coupled between the charge collection electrode and a charge integrating amplifier.

7. The radiation imaging apparatus as claimed in claim 1, wherein said electrically insulating layer has a thickness of at least 0.1 micrometer.

8. A radiation imaging system, comprising:

a radiation emitting device; and

a radiation imaging apparatus configured to receive radiation from the radiation emitting apparatus and generate an image based on the radiation, the radiation imaging apparatus comprising:

an electrically insulating layer having a top surface and a bottom surface;

a top electrode on the top surface of the electrically insulating layer; and

a plurality of pixel cells electrically coupled to the electrically insulating layer and in direct contact with the bottom surface of the electrically insulating layer.

9. The radiation imaging system of claim 8, wherein each of the plurality of pixel cells includes a charge collection electrode, and

wherein the charge collection electrode is disposed within the electrically insulating layer at the bottom surface of the electrically insulating layer.

10. The radiation imaging system of claim 8, wherein the electrically insulating layer is made of one of parylene, BCB benzocyclobutene, and polyimide film KAPTON.

11. The radiation imaging system as set forth in claim 8, wherein the radiation emitting device is an x-ray emitter.

12. The radiation imaging system of claim 8, wherein the radiation emitting device is a charged particle beam emitter.

13. The radiation imaging system of claim 12, wherein the charged particle beam emitter is a proton beam emitter.

14. The radiation imaging system of claim 13, wherein the radiation imaging device is disposed between the charged particle beam emitter and a patient such that a proton beam is emitted toward the patient after passing through the radiation imaging device.

15. The radiation imaging system as claimed in claim 13, wherein the electrically insulating layer has a thickness of at least about 0.1 microns.

16. A method of operating a radiation imaging system, the radiation imaging system comprising: an electrically insulating layer having a top surface and a bottom surface, a top electrode on the top surface of the electrically insulating layer, a plurality of pixel cells electrically coupled to the electrically insulating layer and in direct contact with the bottom surface of the electrically insulating layer, and a transistor connected to each of the plurality of pixel cells, the method comprising:

(1) applying a bias voltage to the top electrode;

(2) receiving charged particles generated based on a beam of radiation directed at the top electrode, wherein the charged particles penetrate the electrically insulating layer and generate a charge signal;

(3) storing the charge signals in storage capacitors such that a plurality of charge signals are stored in a plurality of storage capacitors;

(4) changing the polarity of the gate line bias voltages of the transistors of a row; and

(5) integrating charge from orthogonal data lines, each of the orthogonal data lines connected to a respective storage capacitor among the plurality of storage capacitors.

17. The method of claim 16, wherein step (5) further comprises: the integrated charge is digitized into a value and the value is stored to computer memory.

18. The method of claim 17, wherein the method further comprises:

(6) restoring the polarity of the gate line bias voltage to place the transistors of the row in an "off" state.

19. The method of claim 18, wherein the method further comprises:

(7) the polarity of the gate line bias voltage of the next row is changed to place the transistors in the next row in an "on" state.

20. The method of claim 19, wherein a plurality of charge signals are generated by a plurality of charged particles, the plurality of charge signals being stored in the plurality of storage capacitors, and wherein the method further comprises:

(8) repeating steps (5), (6) and (7) until each charge signal is read out and stored in the computer memory.

21. The method of claim 16, wherein the bias voltage has a magnitude that is no greater than a breakdown voltage of the electrically insulating layer.

22. The method of claim 16, wherein the radiation beam is an x-ray beam.

23. The method of claim 22, wherein the method further comprises: applying the gate line bias voltage to a gate of the transistor prior to receiving the charge signal from the top electrode toward the electrically insulating layer.

24. The method of claim 23, wherein the gate line bias voltage is applied to the gate of the transistor to place the transistor in an "off" state.

25. The method of claim 24, wherein in step (4), the gate line bias voltages of the transistors of the row are reversed in polarity to place all of the transistors in the row in an "on" state.

26. The method of claim 16, wherein the radiation beam is a proton beam.

27. The method of claim 26, further comprising: irradiating a patient with the proton beam after the proton beam passes through the radiation imaging system.

28. The method of claim 26, wherein the electrically insulating layer is at least about 0.1 microns, and wherein the proton beam penetrates through and past the electrically insulating layer.

29. The method of claim 16, wherein the radiation beam is one of an electron beam, a helium ion beam, a carbon ion beam, a heavy ion beam, a muon beam, and a pi-meson beam.

Technical Field

The present invention relates to a radiation imaging system. More particularly, the present invention relates to a radiation imaging system using electrically insulating materials under an applied electric field.

Background

Radiographs have been produced by directly capturing radiographic images as image-wise modulation patterns of electric charges using a radiation-sensitive material layer. The charge is quantified using a regularly arranged array of discrete solid state radiation sensors, depending on the intensity of the incident X-ray radiation, which is generated electrically or optically by the X-ray radiation within the pixelated area.

U.S. patent No.5,319,206 describes a system that employs a layer of photoconductive material to produce an image-level modulated regional distribution of electron-hole pairs that are subsequently converted to corresponding analog pixel (picture element) values by an electro-active device, such as a thin film transistor. U.S. patent No.5,262,649 describes a system that employs a layer of phosphorescent or scintillating material to produce an image-level modulated distribution of photons that are subsequently converted by a photosensitive device (such as an amorphous silicon photodiode) into a corresponding image-level modulated distribution of charge. These solid state systems have the advantage of facilitating repeated exposure to X-ray radiation without consuming and chemically treating the silver halide film.

In systems utilizing photoconductive materials, such as selenium, such as the prior art conventional radiation imaging system 100 shown in fig. 1, a potential is applied to the top electrode 110 to provide an appropriate electric field prior to exposure to image-level modulated X-ray radiation. During exposure to X-ray radiation, electron-hole pairs are generated in the photoconductive layer 190 beneath the dielectric layer 120 in response to the intensity of the image-level modulation pattern of X-ray radiation, and these electron-hole pairs are separated by an applied bias electric field provided by a high voltage power supply. The electron-hole pairs move in opposite directions along the electric field lines toward the opposite surface of the photoconductive layer 190. After X-ray radiation exposure, a charge image is received at the charge collection electrode 130 and stored in the storage capacitor 160 of the transistor 150 formed on the substrate 170. The image charge is then read out through the orthogonal array of charge integrating amplifiers 140 and thin film transistors. This type of direct conversion system has the unique advantage of maintaining a high spatial resolution, substantially independent of the thickness of the x-ray converting photoconductive layer. However, only a very limited number of direct conversion photoconductive elements are currently available for commercial production.

The most popular and technically mature material is amorphous selenium, which has good charge transport properties for both holes and electrons generated by x-rays. However, selenium with atomic number 34 has good x-ray absorption only in the low energy range (typically below 50 KeV). Selenium has a smaller absorption coefficient for higher energy x-rays and therefore a thicker selenium layer is required for adequate x-ray capture. Since the complexity and difficulty of manufacturing good imaging quality amorphous selenium is strongly influenced by selenium thickness, successful x-ray imaging products are limited to lower energy x-ray applications (such as mammography, low energy x-ray crystallography, and low energy non-destructive testing).

For high energy or high intensity x-ray applications, a large number of electron-hole pairs can be generated from each absorbed x-ray photon. When electrons and holes move along an electric field to a charge collection electrode or to a bias electrode, a large number of electrons and/or holes may be trapped in the selenium layer. These trapped charges will alter the local electric field and thus alter the subsequent charge transfer and charge generation efficiency, resulting in shadows of the previous image superimposed on the subsequent image, a phenomenon known as "ghosting". Some image erasing process is typically required to remove these charges and restore the uniform charge conversion characteristics of the selenium layer.

After exposure to the first x-rays, selenium undergoes charge trapping and therefore it suffers from the ghosting effect. Due to these undesirable results, an erase procedure is required to reduce ghosting. K-band radiation from amorphous selenium may also degrade image resolution. Thus, systems that use photoconductive materials between the dielectric layer 120 and the charge collection electrode 130 (such as the prior art shown in FIG. 1) cannot produce high quality (e.g., high resolution) images at the high energy range of x-rays (such as in the range of 100 keV-MeV). In practice, such prior art devices are typically only capable of producing high resolution images over a range up to several tens of keV, such as below 50 keV.

It is therefore desirable to design a radiation imaging system without resolution loss and with minimized ghosting at high radiation energies or high doses.

During radiation therapy using charged particles, the patient is in a high background radiation chamber (there are a large number of background x-rays and gamma rays). In such environments, it is desirable to have a detector that has a high detection efficiency for charged particles, but a low detection efficiency for x-rays or gamma-rays.

One method of radiation therapy is proton therapy, in which a high-energy proton beam is directed at the patient. One advantage of proton therapy in providing therapy is that protons deposit most of their ionizing dose at a specific location within the body and then do not travel further through the body. This effect causes less damage to the tissue surrounding the target. However, since the proton beam does not travel through the body, in proton treatment, protons cannot be detected after passing through the patient, and it is difficult to accurately detect the energy of the proton beam.

There is a need for the physician to know whether the proton beam is irradiated to the desired treatment location and whether the intensity of the proton beam is at the desired level.

Traditionally, it has not been possible to detect or measure proton beams used to treat patients. Instead, a separate proton beam (test beam) is radiated to the detector, and the position and intensity of the beam are detected. A separate proton beam (treatment beam) is irradiated to the patient for treatment.

Fig. 6 provides an example of such a system. As shown in fig. 6, a conventional proton beam therapy system 600 includes a scintillation plate 601, a camera 602, and a mirror 603, the mirror 603 serving to guide scintillation (photons) from the scintillation plate 601 to the camera.

After the system 600 detects the position and intensity, the system 600 can be moved and the treatment beam can be delivered to the patient. In the alternative, the analog beam may be generated in parallel with the treatment beam. In either case, it is not possible to detect the position and intensity of the treatment beam in real time, or "inline dosimetry". Thus, there may be differences between the position and intensity of the analog and treatment beams, and the treatment effect may be less effective.

Disclosure of Invention

A radiation imaging apparatus according to an embodiment of the present invention has: an electrically insulating layer with a top surface and a bottom surface; a top electrode on a top surface of the electrically insulating layer; an array of pixel cells electrically coupled to the electrically insulating layer and in direct contact with a bottom surface of the electrically insulating layer; and an array of transistors connected to the array of pixel cells.

In one aspect of the present invention, there is provided a radiation imaging system having a radiation emitting device and a radiation imaging device, the radiation imaging device including: the pixel structure includes an electrically insulating layer with a top surface and a bottom surface, a top electrode on the top surface of the electrically insulating layer, an array of pixel cells electrically coupled to the electrically insulating layer and in direct contact with the bottom surface of the electrically insulating layer, and an array of transistors connected to the array of pixel cells. Each of the plurality of pixel cells includes a charge collection electrode disposed on a bottom surface of the electrically insulating layer. Each of the plurality of pixel cells further includes a charge storage capacitor and at least one transistor.

The plurality of pixel cells are electrically coupled to the electrically insulating layer without an x-ray semiconductor. A transistor is coupled between the charge collection electrode and the charge integrating amplifier.

In another aspect of the invention, a method of operating a radiation imaging system having: an electrically insulating layer with a top surface and a bottom surface; a top electrode on a top surface of the electrically insulating layer; an array of pixel cells electrically coupled to the electrically insulating layer and in direct contact with a bottom surface of the electrically insulating layer; and a transistor connected to each of the plurality of pixel units. The method comprises the following steps: applying a bias voltage to the top electrode; receiving a charged particle beam, wherein the charged particle beam penetrates an electrically insulating layer and generates a charge signal; the charge signals are stored in the storage capacitors such that a plurality of charge signals are stored in the plurality of storage capacitors. The method also includes changing the polarity of the gate line bias voltages of the transistors of a row and integrating charge from orthogonal data lines, each of the orthogonal data lines being connected to a respective storage capacitor among a plurality of storage capacitors.

Accordingly, objects, aspects and advantages of the present invention provide a radiation imaging system having: the array of pixel cells includes an electrically insulating layer with a top surface and a bottom surface, a top electrode on the top surface of the electrically insulating layer, an array of pixel cells electrically coupled to the electrically insulating layer without an x-ray semiconductor, and an array of transistors connected to the array of pixel cells.

Other objects, aspects and advantages of the present invention will become apparent by reference to the following description and appended drawings wherein like reference numbers refer to the same component, element or feature.

Drawings

Features of the present invention will become apparent to those skilled in the art from the following description with reference to the accompanying drawings, in which:

FIG. 1 shows a schematic diagram of a conventional radiation imaging system using Direct Conversion Techniques (DCT);

FIG. 2 shows a schematic view of a radiation imaging system according to an embodiment of the invention;

FIG. 3 shows a schematic diagram of a readout circuit according to one embodiment of the invention;

FIG. 4 shows a flow diagram of a method for operating a radiation imaging system according to an embodiment of the invention;

FIG. 5 illustrates a comparison of an x-ray image obtained from a radiation imaging system 200 according to one embodiment of the present invention with an x-ray image obtained from a conventional radiation imaging system;

figure 6 shows a prior art apparatus for detecting proton beam radiation in a proton beam therapy environment;

FIG. 7 is a proton beam radiation therapy system according to one embodiment;

FIG. 8 is an image of a star target obtained using a Spread Out Bragg Peak (SOBP) proton beam imaging system according to one embodiment of the present invention;

FIG. 9 is a Graphical User Interface (GUI) showing an image of a proton pencil beam obtained using a radiation imaging system of one embodiment of the present invention; and

FIG. 10 is a graph showing the intensities of five proton pencil beams with various position coordinates and beam intensity profiles measured with an imaging system according to one embodiment of the present invention.

Detailed Description

For purposes of simplicity and illustration, the present invention is described by referring primarily to exemplary embodiments thereof. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without limitation to these specific details. In other instances, well known methods and structures have not been described in detail so as not to unnecessarily obscure the present invention.

Embodiments of the present invention provide a radiation imaging system and a method for operating a radiation imaging system. The details of the present disclosure will be explained in more detail with reference to the following examples. Those skilled in the art will readily recognize and understand the embodiments not included herein and omit explanation thereof.

The radiation may be at least one selected from the group consisting of X-rays, gamma rays, and ionizing radiation. Ionizing radiation may include all radiation that penetrates a material and produces light in a scintillation material (scintillation material). For example, the ionizing radiation may include alpha rays, beta rays, proton beams, charged particle beams, neutrons, and the like.

Fig. 2 is a schematic diagram illustrating a radiation imaging system 200 according to an embodiment of the present invention. The radiation imaging system 200 includes a radiation emitting device 205 and a radiation imaging device 206. Embodiments are described below in connection with charged particle radiation. Examples of charged particle radiation include ion beam radiation. Examples of charged particle radiation or ion beam radiation include proton beam radiation, helium ion beam, carbon ion beam, heavy ion beam, electron beam, muon beam, pi-meson beam, and the like. Radiation imaging device 206 includes a top electrode 210, an electrically insulating layer 220, and a charge collection electrode 230. Radiation imaging system 200 also includes charge integrating amplifier 240, transistor 250, and storage capacitor 260. The top electrode 210 may be formed by sputter deposition and/or adhesion, and may be formed of any conductive material, such as a metal. Examples of the electrically insulating layer 220 include, but are not limited to, organic compounds including low-Z materials (e.g., chemical elements having a low atomic number of protons in atomic nuclei), such as hydrogen (H), oxygen (O), carbon (C), nitrogen (N), and fluorine (F), such as polytetrafluoroethylene (TEFLON) and acrylic resin. Preferred examples of the material for the electrical insulation layer 220 are parylene, BCB (benzocyclobutene), and polyimide film (KAPTON), which have high dielectric strength. Vacuum deposition can be used for parylene and adhesion can be used for parylene or KAPTON by preparing a film tape preferably having a thickness of 50 microns. In fig. 2, the capacitor on the left side of the radiation imaging device 206 represents the capacitance of the electrically insulating layer 220 and the storage capacitor 260.

In the radiation imaging system 200, the radiation emitting device 205 is disposed above the radiation imaging device 206, wherein the top electrode 210 is disposed on the top surface of the electrical insulation layer 220, and the charge collecting electrode 230 as a pixel unit is disposed on the bottom surface of the electrical insulation layer 220. In one embodiment, the charge collection electrode 230, which is a pixel unit, is disposed on a bottom surface of the electrically insulating layer within the electrically insulating layer. In one embodiment, the pixel cells are electrically coupled to the electrically insulating layer 220, and at least one transistor is connected to each pixel cell, such that the pixel cells are disposed at a bottom surface of the electrically insulating layer 220. Each transistor is coupled between one of the charge collection electrodes 230 disposed within the bottom surface of the electrically insulating layer 220 and ground.

In another embodiment, the pixel cell may include a charge collection electrode 230, a storage capacitor 260, and a transistor 250. The charge collecting electrode 230 collects a charge signal in the pixel region of the electrical insulation layer 220. The storage capacitor 260 is connected to the charge collecting electrode 230 for storing the charge signal collected by the charge collecting electrode 230. A Field Effect Transistor (FET)250 is connected to the charge collection electrode 230 and acts as a switch between the storage capacitor 260 and the external charge integrating amplifier 240.

In a detector (also referred to as a radiation imaging system 200) according to an embodiment of the present invention, as charged particles traverse the dielectric layer 220, continuous ionization along their path creates a conductive channel to allow current to conduct from the bias electrode 210 to the pixel electrode 230. The conductive path is only open when charged particles traverse the dielectric layer 220. In contrast, the photoelectric interaction of an x-ray or gamma ray photon with the dielectric layer 220 produces a set of electron-hole pairs at the point of interaction. Even with an electric field between the bias electrode and the pixel electrode, the charge separation and mobility of the electron-hole pairs in the dielectric layer 220 is limited, thus requiring multiple x-ray or gamma-ray photons to do this interaction at adjacent locations in the pixel to create a conductive path that allows current to flow from the bias electrode to the pixel electrode. In this detector 200 (or radiation imaging system 200), the detection of a single x-ray or gamma ray is low, but the detection of charged particles is high. Therefore, the charged particle signal to background photon-to-noise ratio is high even in high background photon radiation environments.

Fig. 3 shows a schematic diagram of a readout circuit 300 according to an embodiment of the invention.

As shown in fig. 3, the pixel matrix is arranged in a plurality of rows and a plurality of columns (such as N rows by M columns). Although fig. 3 shows an arrangement of three (3) rows by three (3) columns, other numbers of rows and columns may be used. The gate lines of each row of transistors are connected to each of a plurality of external gate drivers. A data line of each column of transistors orthogonal to the gate line is connected to each of the plurality of charge integrating amplifiers. Before the radiation beam exposure, a bias voltage of a magnitude up to, but not exceeding, the breakdown voltage of the electrical insulator is applied to the top electrode 210, and a negative voltage is applied to all gate electrodes of the pixel FET transistors. During radiation beam exposure, the ionization channel current of the insulating layer 220 increases in proportion to the intensity or dose of the radiation. The local ionized channel charge above each pixel is then stored in the storage capacitor 260.

During readout of an image caused by radiation beam exposure, the gate voltage in a ROW (ROW1, ROW2, or ROW3) is changed from negative to positive, allowing the charge stored in each pixel in the ROW to flow through the orthogonal data lines 301a, 301b, 301c to the respective charge integrating amplifiers 240a, 240b, 240c, and then digitized by a processing computer (not shown in fig. 3). After the data for one row in the matrix is complete, the potential of the gate line in that row will return to negative, returning the FET transistor to the "off" state. The potential of the next row of gate lines will then change from negative to positive, allowing the stored charge to flow to the orthogonal charge integrating amplifiers. This process will be repeated in turn until all the charges in the pixel matrix are read out.

In one embodiment, the array of pixel cells is directly coupled to the electrically insulating layer 220 without any intervening layer for the radiation converter, which has a Charge Generating Material (CGM) such as amorphous selenium, or a photoconductive layer for converting x-ray energy into electron-hole pairs. Using a thin layer of electrically insulating material without a selenium-bearing layer, the charge generation efficiency from the photoelectric effect (photon-insulating material interaction) is typically 100 times as low as from the photon-selenium interaction. However, upon exposure to particle beam radiation, the charge passing through the ionization channel maintains high spatial resolution while exhibiting orders of magnitude less charge trapping or local electric field transformations affecting subsequent images. Radiation imaging system 200 with electrically insulating layer 220 and charge collecting electrode 230 within electrically insulating layer 220 does not have a selenium-bearing layer and does not have a layer for blocking electrons on electrically insulating layer 220.

In one embodiment according to the invention, the radiation imaging system 200 is capable of obtaining an image from a beam of particle radiation. As the excited charged particle traverses the insulator, it ionizes neutral atoms in the insulating material, creating an ionization channel along its path. The ionization channel allows current to flow between the bias electrode and the pixel electrode, and charges are accumulated in the storage capacitor of the corresponding pixel. The ionization channel is closed when the excited charged particles exit from the insulator layer. Ionization of the insulating material may be caused by various types of charged particle beam radiation including electron beams, proton beams, helium ion beams, carbon ion beams, heavy ion beams, muon beams, pi-meson beams, and the like.

In an embodiment according to the invention, the radiation beam is a high intensity X-ray beam and the X-ray energy may range anywhere from about 5keV to about 10 MeV. The conductive channel may be formed when the concentration of the plurality of x-ray photons in the pixel is high enough to form a continuous path between the bias electrode and the pixel electrode. In particular, embodiments of the present invention are capable of producing high resolution images using high intensity x-rays having energy levels greater than 50keV (or 50keV-10MeV), which exceeds the range over which prior art devices are capable of producing high resolution images. Furthermore, embodiments of the present invention are capable of producing high resolution images using high intensity x-rays having energy levels of 100keV or greater (or 100keV-10MeV), which energy levels of 100keV or greater (or 100keV-10MeV) significantly exceed the range over which prior art devices are capable of producing high resolution images. However, any particular X-ray energy level may be applied depending on the purpose for which radiation imaging system 200 is used without departing from the scope of the present invention.

According to one embodiment, the range of radiation applied to the top electrode 210 is 50 milli-roentgens (mR/hr) per hour or greater. In another embodiment, the range of radiation applied to the top electrode 210 is 100mR/hr or greater. According to one embodiment, electrically insulating layer 220 may have a thickness of about 0.1 microns or greater. According to the present specification and claims, the term "about 0.1 microns" means having a variation of 10% or less. However, any thickness of electrically insulating layer 220 may be selected according to the purpose for which radiation imaging system 200 is used without departing from the scope of the present invention. According to one embodiment, the electrically insulating layer 220 has a thickness of 10mm or less.

In one embodiment, the radiation imaging system 200 is a proton beam system, and the image is produced by directing the proton beam at a top electrode 210 of the radiation imaging system 200, and the electrically insulating layer 220 is sufficiently thin so that the proton beam passes through the electrically insulating layer 220 to reach the patient after generating charge in the radiation imaging system 200. In such embodiments, the electrically insulating layer may be at least about 0.1 microns thick.

In one embodiment, an electrically insulating layer 220 may be deposited on top of the charge collecting electrode 230. The charge collecting electrode 230 may be disposed on a bottom surface of the electrical insulation layer 220, which is opposite to a top surface of the electrical insulation layer 220 to which the top electrode 210 is attached. In another embodiment, charge collection electrode 230 may be integrated in electrically insulating layer 220 at a bottom surface of electrically insulating layer 220, as shown in fig. 2. In the embodiment of the present invention, the charge collection electrode 230 is in direct contact with the electrical insulation layer 220, or in other words, a photoconductive layer is not formed between the charge collection electrode and the electrical insulation layer 220. In one embodiment, the top electrode 210 is formed directly on the top surface of the electrical insulation layer 220 to directly contact the top surface of the electrical insulation layer 220.

In one embodiment, the radiation imaging device 206 of the radiation imaging system 200 can be prepared starting from a commercially available thin film transistor panel comprising a substrate 270, a storage capacitor 260, a transistor 250, and a charge integrating amplifier 240. Commercially available panels used in liquid crystal displays can be a convenient starting point for building thin film transistor panels. The charge collecting electrode 230 may be formed on the thin film transistor panel. Over the surface of the charge collection electrode 230, an electrically insulating layer 220 may be applied. The electrically insulating layer 220 may be formed directly on the charge collecting electrode 230. The electrically insulating layer 220 may also be formed directly on the thin film transistor panel. The top electrode 210 may be formed on the electrically insulating layer 220.

The scintillation light of conventional scintillation imaging detectors needs to travel long distances, typically hundreds of microns, before converting the light into electrical charge by means of photodiodes. Along this long optical path, the scintillation light of conventional scintillation imaging detectors may experience scattering inside the scintillation material, resulting in a degradation of image sharpness.

On the other hand, a problem with conventional direct conversion photoconductive materials (such as amorphous selenium) is that some of the charge generated within the photoconductive layer may continue to remain as trapped charge, not only within the photoconductive layer, but also at the planar interface between the surface of the photoconductive layer and the surface of an adjacent layer. These residual charges must be completely eliminated before the next X-ray exposure. Otherwise, an erroneous image pattern associated with the previous radiation pattern may be added to the subsequent radiograph. In the radiation imaging system 200 of the present invention, electrically insulating materials without significant hysteresis charge movement are used with the novel structure or configuration of the top electrode 210, electrically insulating layer 220, and charge collecting electrode 230, so that no residual charge erasure scheme is required for imaging and high spatial resolution can be maintained.

Fig. 4 shows a flow diagram of a method 400 for operating the radiation imaging system 200 according to an embodiment of the invention. The radiation imaging system includes a radiation image generating apparatus having: the array of transistors includes an electrically insulating layer with a top surface and a bottom surface, a top electrode on the top surface of the electrically insulating layer, an array of pixel cells electrically coupled to the electrically insulating layer, and an array of transistors connected to the array of pixel cells. The method 400 may be performed and operated electronically using a Graphical User Interface (GUI) in a computer system. For example, a user may interact with a GUI of a computer system to generate commands for controlling a radiation emitting device to emit radiation and for controlling a radiation image generating device to generate the electrical charges required to output an electrical signal based on the emitted radiation. The computer system may then convert the received signals into an image to be displayed on a display device or stored in an electrical storage (memory).

An embodiment of the following method will now be described with reference to the following flowchart of method 400 depicted in fig. 4: in the method, the radiation imaging system 200 shown in fig. 2 and 3 may be employed for acquiring images with high spatial image resolution. It will be apparent to those of ordinary skill in the art that the method 400 represents a generalized illustration and that other steps may be added or existing steps may be removed, modified or rearranged without departing from the scope of the present invention. Additionally, the method 400 is described with respect to the radiation imaging system 200 by way of example and not limitation, and the method 400 may be performed in other types of radiation imaging systems.

In step 401, a bias voltage of a magnitude up to, but not exceeding, the breakdown voltage of the electrically insulating layer is applied to the top electrode 210 towards the electrically insulating layer 220.

At step 402, a gate line bias voltage is applied to the gates of transistors 250 to place each transistor 250 in an "off" state.

In step 403, radiation is emitted from the radiation emitting device 205 and a signal is received from the top electrode 210 towards the electrically insulating layer 220. Based on the received signal, the charged particles penetrate the electrically insulating layer 220 to generate a charge signal. In one embodiment, the radiation is high intensity x-ray radiation and the photons are x-ray photons. According to one embodiment, the voltage of the x-ray signal may range from 5KeV to about 10 MeV. According to one embodiment, the range of radiation applied to the top electrode 210 is 50 milli-roentgens (mR/hr) per hour or greater. In another embodiment, the range of radiation applied to the top electrode 210 is 100mR/hr or greater. According to another embodiment, the radiation is proton beam radiation and the photons are generated based on the proton beam directed at the top electrode 210. At step 403, signals are collected at the array of pixel cells. Each pixel cell includes a charge collection electrode 230 disposed on a bottom surface of the electrically insulating layer 220, as depicted in fig. 2. In step 403, the signal is collected within the electrically insulating layer 220.

In step 404, the charge signal is stored in the charge storage capacitor 260. The polarity of the gate line bias voltages for a row is changed so that all the pixel transistors in the corresponding row are in an "on" state. In addition, the charge from the orthogonal data lines is integrated and then digitized into a value for storage in computer memory. The polarity of the gate line bias voltage is restored to place the transistors of the corresponding row in an "off" state. The polarity of the gate line bias voltage of the next row is changed so that all the pixel transistors in the next row are in an "on" state. These steps may be repeated until all of the charge signals stored in the array have been read out and stored in the computer memory.

In step 405, a radiation image is generated based on the signal stored at the charge storage capacitor and the generated radiation image is displayed for a user. The radiation image may be displayed electronically by a computer monitor or on film or paper.

Fig. 5 illustrates a comparison of an x-ray image obtained from a radiation imaging system 200 according to an embodiment of the present invention with an x-ray image obtained from a conventional radiation imaging system. Fig. 5 (a) and 5 (C) show x-ray images obtained from the radiation imaging system 200 according to one embodiment of the present invention. Fig. 5 (B) shows an x-ray image obtained from an x-ray detector using an indirect conversion method. Fig. 5 (D) shows an x-ray image obtained from an x-ray detector using a direct conversion method including a structure similar to that shown in fig. 1 including a photoconductive layer 190. The x-ray image obtained from the radiation imaging system 200 according to an embodiment of the present invention shows superior image quality compared to the x-ray image obtained from the x-ray detector using the indirect conversion method. In addition, the x-ray image obtained from the radiation imaging system 200 according to an embodiment of the present invention shows better image quality or at least the same image quality as the x-ray image obtained from the x-ray detector using the direct conversion method.

"detection quantum efficiency" is a measure of how efficient a detection device is. The DQE of radiation imaging system 200 is less than 10% for x-rays and gamma rays, requiring the use of high energy x-rays to obtain imageable data. However, for proton beam radiation (charged particles), the DQE of the radiation imaging system 200 is very high-close to 100% (i.e., in the range of 98% -100%). An X-ray or gamma ray cannot produce a detectable imageable spot. However, each individual charged particle, such as a proton, traverses the insulating layer, creating an imageable spot in the radiation imaging system 200.

Additionally, in proton therapy, the patient may be in a room with high background radiation (i.e., where there are significant background x-rays and gamma rays). Since DQE of X-rays and gamma rays is low but detection of charged particles is high in the case of the radiation imaging system 200, the accuracy of the radiation imaging system using a proton beam is high even in a high background radiation environment. Thus, according to one embodiment, a radiation imaging system is used to receive a proton beam in a proton radiation therapy operation.

Fig. 7 shows a radiation therapy system according to an embodiment. In particular, fig. 7 shows a proton beam radiation therapy system 700. The system includes a proton accelerator 701, a proton shaper 702, and an imaging system 703.

In operation, proton particles are accelerated by the proton accelerator 701. The proton particles that have been accelerated by the proton accelerator 701 pass through a proton shaper 702 to form a beam of a desired shape. For example, in embodiments where a tumor in the patient 704 is being treated, the proton shaper 702 may shape the accelerated proton beam from the proton accelerator 701 to have a diameter (or within a predetermined size relative to the tumor) corresponding to the diameter of the tumor. The proton shaper 702 uses magnets, coils, collimators, or the like to shape the accelerated proton beam.

The imaging system 703 corresponds to the radiation imaging system 200 of fig. 2. According to an embodiment of the invention, the electrically insulating layer 220 of the radiation imaging system 200 is sufficiently thin to allow the particle beam to pass through the imaging system 703 to the patient 704 where the proton beam terminates. In one embodiment, electrically insulating layer 220 is at least about 0.1 microns.

In one embodiment, system 700 includes an imaging control computer 705. The imaging control computer 705 may include control circuitry or may be programmed to control the operation of the proton accelerator 701 and the proton shaper 702 to emit a particular shape of proton beam through the imaging system 703 to the patient 704. The imaging control computer 705 may also receive signals from the imaging system 703 that are based on the proton beam passing through the imaging system 703, and may store and analyze the data and may generate images based on the received signals. In one embodiment, based on signals received from the imaging system 703, the imaging control computer 705 stores therein position data of the patient 704 and maps the position data of the proton beam to the position data of the patient 704.

Fig. 8 is an image of a star target at the location of a patient 704 using a 150MeV SOBP (spread bragg peak) proton beam from a proton accelerator 701 and an imaging system 703 according to an embodiment of the invention.

Fig. 9 is an example of a Graphical User Interface (GUI) used in an imaging control computer 705 according to an embodiment of the present invention. The GUI includes an image 901 depicting a 150MeV proton pencil beam (pencilbeam) generated based on the signals output by the imaging system 703 and an intensity profile 902 of the proton pencil beam.

Fig. 10 is a diagram showing the intensity profiles and positions of five proton pencil beams 10a, 10b, 10c, 10d, and 10e measured using imaging system 703 according to an embodiment of the present invention. As shown in fig. 10, the imaging system 703 may output intensity and position data along the x-axis and y-axis (only the x-axis is shown in fig. 10), which are displayed as a graph by the imaging control computer 705.

While specific reference has been made throughout this disclosure, representative embodiments of the invention may be used in a wide variety of applications, and the foregoing discussion is not intended to, and should not be construed as, limiting, but is provided as an illustrative discussion of various aspects of the invention.

Described and illustrated herein are embodiments of the present invention, along with some variations thereof. The terms, descriptions and figures used herein are set forth by way of illustration only and are not meant as limitations. Those skilled in the art will recognize that many variations are possible within the spirit and scope of the invention, which is intended to be defined by the following claims and their equivalents, in which all terms are meant in their broadest reasonable sense unless otherwise indicated.