阅读说明：本技术 一种基于三维散热结构的三维异构射频模组的制作方法 (manufacturing method of three-dimensional heterogeneous radio frequency module based on three-dimensional heat dissipation structure ) 是由 郁发新 冯光建 王志宇 陈华 张兵 于 2019-09-27 设计创作，主要内容包括：本发明公开了一种基于三维散热结构的三维异构射频模组的制作方法,具体包括如下步骤：101)芯片载板制作步骤、102)转接板制作步骤、103)键合步骤；本发明提供设置大流量散热沟槽的一种基于三维散热结构的三维异构射频模组的制作方法。(The invention discloses a manufacturing method of three-dimensional heterogeneous radio frequency modules based on a three-dimensional heat dissipation structure, which specifically comprises the following steps of 101) manufacturing a chip carrier plate, 102) manufacturing an adapter plate and 103) bonding, and provides a manufacturing method of three-dimensional heterogeneous radio frequency modules based on a three-dimensional heat dissipation structure, wherein a large-flow heat dissipation groove is formed in the manufacturing method.)

1, A manufacturing method of a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure is characterized by comprising the following steps:

101) a chip carrier plate manufacturing step: manufacturing a groove on the lower surface of the chip carrier plate through photoetching and etching processes, depositing silicon oxide or silicon nitride on the lower surface of the chip carrier plate, or directly performing thermal oxidation to form an insulating layer, manufacturing a seed layer above the insulating layer through physical sputtering, magnetron sputtering or evaporation plating processes, and manufacturing a bonding metal on the seed layer through photoetching and electroplating processes to form a bonding pad;

thinning the upper surface of the chip carrier plate to a thickness of between 10 and 700 um; manufacturing a chip groove on the upper surface of the chip carrier plate, welding the radio frequency chip in the chip groove by a welding process or a heat-conducting gluing process, and filling a gap area between the radio frequency chip and the chip groove with soldering tin or heat-conducting glue; manufacturing an RDL on the upper surface of the chip carrier plate by photoetching and electroplating processes;

102) the manufacturing steps of the adapter plate are as follows: depositing silicon oxide or silicon nitride on the upper surface of the adapter plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; manufacturing RDL on the seed layer;

through photoetching and etching processes, TSV holes are formed in the positions, corresponding to the grooves in the lower surface of the chip carrier plate, of the upper surface of the adapter plate; manufacturing a heat dissipation groove in a position, corresponding to the chip groove, on the upper surface of the adapter plate by a photoetching, dry or wet etching process, wherein the depth range of the heat dissipation groove is between 10um and 700 um;

103) the bonding step comprises the steps of welding the lower surface of the chip carrier plate and the upper surface of the adapter plate, thinning the lower surface of the adapter plate, exposing the bottoms of the TSV holes, manufacturing connecting pads on the lower surface of the adapter plate through photoetching and electroplating processes, cutting the welded and bonded module to obtain a single radio frequency module, installing the radio frequency module on a corresponding PCB, and introducing a recyclable heat dissipation liquid into a heat dissipation groove to obtain the radio frequency module PCB with three-dimensional heat dissipation capability.

2. The method for manufacturing kinds of three-dimensional heterogeneous radio frequency modules based on three-dimensional heat dissipation structure according to claim 1, wherein the RDL comprises trace layout and bonding pads, the RDL is made of or a mixture of copper, aluminum, nickel, silver, gold and tin, the RDL has a layer or multilayer structure, the thickness of the RDL ranges from 10nm to 1000um, and the diameter of the bonding pads ranges from 10um to 10000 um.

3. The method for manufacturing three-dimensional heterogeneous radio frequency modules based on three-dimensional heat dissipation structures according to claim 1, wherein the groove width ranges from 1um to 10000um, the depth ranges from 10um to 1000um, the insulating layer thickness ranges from 10nm to 100um, the seed layer thickness ranges from 1nm to 100um, the structure of the three-dimensional heterogeneous radio frequency module is layer or multilayer structure, the material of the three-dimensional heterogeneous radio frequency module is or a mixture of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, the height of the bonding pad ranges from 10nm to 1000um, the bonding pad is or a mixture of copper, aluminum, nickel, silver, gold and tin, and the structure of the bonding pad is layer or multilayer.

4. The method for manufacturing three-dimensional heterogeneous radio frequency modules based on three-dimensional heat dissipation structure as claimed in claim 1, wherein the chip carrier board adopts sizes of 4, 6, 8 and 12 inches, the thickness range is 200um to 2000um, and the material is types selected from silicon, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane.

5. The method for making a three-dimensional heterogeneous radio frequency module according to claim 1, wherein the chip slot has a square shape with a depth ranging from 10um to 700um and a side length ranging from 100um to 10 mm.

Technical Field

The invention relates to the technical field of semiconductors, in particular to a manufacturing method of three-dimensional heterogeneous radio frequency modules based on a three-dimensional heat dissipation structure.

Background

The microwave millimeter wave radio frequency integrated circuit technology is the basis of modern national defense weaponry and internet industry, and along with the rapid rise of the economy of internet plus such as intelligent communication, intelligent home, intelligent logistics, intelligent transportation and the like, the microwave millimeter wave radio frequency integrated circuit which bears the functions of data access and transmission also has huge practical requirements and potential markets.

However, for the rf chip, such as the analog chip, the area of the analog chip cannot be reduced by the same factor as that of the digital chip , so that the rf microsystem with very high frequency does not have enough area to place the PA/LNA and needs to stack the PA/LNA.

A module is used for piling up is embedded PA/LNA into the cavity earlier like, then sets up microchannel heat abstractor in the bottom of cavity, but to decide the radio frequency chip of thickness, chip surface device heat will conduct the chip bottom through the chip substrate and just can dispel the heat, sets up the heat dissipation groove just like this and can not satisfy the module heat dissipation demand at the chip bottom.

Disclosure of Invention

The invention overcomes the defects of the prior art and provides a manufacturing method of three-dimensional heterogeneous radio frequency modules based on three-dimensional heat dissipation structures, wherein the three-dimensional heterogeneous radio frequency modules are provided with large-flow heat dissipation grooves.

The technical scheme of the invention is as follows:

A manufacturing method of a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure specifically comprises the following steps:

101) a chip carrier plate manufacturing step: manufacturing a groove on the lower surface of the chip carrier plate through photoetching and etching processes, depositing silicon oxide or silicon nitride on the lower surface of the chip carrier plate, or directly performing thermal oxidation to form an insulating layer, manufacturing a seed layer above the insulating layer through physical sputtering, magnetron sputtering or evaporation plating processes, and manufacturing a bonding metal on the seed layer through photoetching and electroplating processes to form a bonding pad;

thinning the upper surface of the chip carrier plate to a thickness of between 10 and 700 um; manufacturing a chip groove on the upper surface of the chip carrier plate, welding the radio frequency chip in the chip groove by a welding process or a heat-conducting gluing process, and filling a gap area between the radio frequency chip and the chip groove with soldering tin or heat-conducting glue; manufacturing an RDL on the upper surface of the chip carrier plate by photoetching and electroplating processes;

102) the manufacturing steps of the adapter plate are as follows: depositing silicon oxide or silicon nitride on the upper surface of the adapter plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; manufacturing RDL on the seed layer;

through photoetching and etching processes, TSV holes are formed in the positions, corresponding to the grooves in the lower surface of the chip carrier plate, of the upper surface of the adapter plate; manufacturing a heat dissipation groove in a position, corresponding to the chip groove, on the upper surface of the adapter plate by a photoetching, dry or wet etching process, wherein the depth range of the heat dissipation groove is between 10um and 700 um;

103) the bonding step comprises the steps of welding the lower surface of the chip carrier plate and the upper surface of the adapter plate, thinning the lower surface of the adapter plate, exposing the bottoms of the TSV holes, manufacturing connecting pads on the lower surface of the adapter plate through photoetching and electroplating processes, cutting the welded and bonded module to obtain a single radio frequency module, installing the radio frequency module on a corresponding PCB, and introducing a recyclable heat dissipation liquid into a heat dissipation groove to obtain the radio frequency module PCB with three-dimensional heat dissipation capability.

And , the RDL comprises a routing layout and a bonding pad, the RDL is made of or a mixture of copper, aluminum, nickel, silver, gold and tin, the RDL has a layer or multilayer structure, the thickness of the RDL ranges from 10nm to 1000um, and the diameter of the bonding pad ranges from 10um to 10000 um.

, the width of the groove ranges from 1um to 10000um, the depth ranges from 10um to 1000um, the thickness of the insulating layer ranges from 10nm to 100um, the thickness of the seed layer ranges from 1nm to 100um, the structure of the seed layer is layers or multilayer structure, the material of the seed layer adopts or a mixture of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel, the height of the bonding pad ranges from 10nm to 1000um, the bonding pad adopts or a mixture of copper, aluminum, nickel, silver, gold and tin, and the structure of the bonding pad is layers or multiple layers.

, the chip carrier plate adopts sizes of 4, 6, 8 and 12 inches, the thickness range is 200um to 2000um, and the material is types of silicon, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane.

And , the chip groove is square, the depth ranges from 10um to 700um, and the length of the side ranges from 100um to 10 mm.

Compared with the prior art, the invention has the advantages that: according to the invention, the large-flow heat dissipation grooves are formed in the module, so that the heat dissipation grooves are formed in the periphery and the bottom of the chip, the module has a three-dimensional heat dissipation function, and the heat dissipation capability of the module can be greatly improved.

Drawings

FIG. 1 is a schematic diagram of a chip carrier with a groove according to the present invention;

FIG. 2 is a schematic view of the present invention illustrating the chip slot of FIG. 1;

FIG. 3 is a schematic view of a chip carrier according to the present invention;

FIG. 4 is a schematic diagram of a Through Silicon Via (TSV) hole formed in an interposer according to the present invention;

FIG. 5 is a schematic view of an adapter plate of the present invention;

FIG. 6 is a schematic view of the bonding of FIGS. 5 and 6 according to the present invention;

FIG. 7 is a schematic diagram of the PCB of the present invention after being transferred and assembled.

The labels in the figure are: the chip carrier board 101, the groove 102, the interposer 103, the chip slot 104, the gap region 105, the rf chip 106, the TSV hole 107, and the heat dissipation trench 108.

Detailed Description

Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements of similar function throughout. The embodiments described below with reference to the drawings are exemplary only, and are not intended as limitations on the present invention.

It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein by .

Reference numerals in the various embodiments are provided for steps of the description only and are not necessarily associated in a substantially sequential manner. Different steps in each embodiment can be combined in different sequences, so that the purpose of the invention is achieved.

The invention is further described in conjunction with the figures and the detailed description.