Power module structure
阅读说明：本技术 功率模块结构 (Power module structure ) 是由 洪守玉 徐海滨 程伟 程娟 王涛 赵振清 于 2019-04-22 设计创作，主要内容包括：本发明提供一种功率模块结构,该功率模块结构包括第一金属层、第二金属层、第三金属层、第四金属层、第一开关和第二开关；第一金属层和第三金属层分别设置于第一参考平面和第二参考平面,其中,所述第一金属层和所述第三金属层在所述第一参考平面或所述第二参考平面上的投影有第一重叠区域,且流经所述第一金属层的电流与流经所述第三金属层的电流方向相反。通过采用本发明的功率模块结构,很好地实现了电感的抵消,降低了模组的寄生电感。(The invention provides power module structures, which comprise a metal layer, a second metal layer, a third metal layer, a fourth metal layer, a switch and a second switch, wherein the metal layer and the third metal layer are respectively arranged on a reference plane and a second reference plane, wherein a overlapping region is formed in the projection of the metal layer and the third metal layer on the reference plane or the second reference plane, and the direction of current flowing through the metal layer is opposite to that of current flowing through the third metal layer.)
1, power module structure, comprising:
an th metal layer disposed on the th reference plane;
a second metal layer disposed at the reference plane and adjacent to the metal layer;
a third metal layer disposed on a second reference plane, wherein the second reference plane is parallel to the th reference plane;
the fourth metal layer is arranged on the second reference plane and is adjacent to the third metal layer, and the fourth metal layer is electrically connected with the second metal layer through a connecting bridge;
a switch including a terminal and a second terminal, the terminal being electrically connected to the third metal layer and the second terminal being electrically connected to the second metal layer, and
a second switch comprising a third terminal electrically connected to the fourth metal layer and a fourth terminal electrically connected to the th metal layer;
wherein a th overlapping region is projected by the th metal layer and the third metal layer on the th reference plane or the second reference plane, and a current flowing through the th metal layer is opposite to a current flowing through the third metal layer.
2. The power module structure of claim 1, further comprising th and second substrates, wherein the th and second metal layers are disposed on a lower surface of the th substrate, and the third and fourth metal layers are disposed on an upper surface of the second substrate.
3. The power module structure of claim 1, further comprising:
a th pad connected to the th switch at , the th pad connected to of the third metal layer and the second metal layer, the th switch connected to another of the third metal layer and the second metal layer, and
a second pad connected to with the second switch, the second pad being connected to of the fourth metal layer and the metal layer, the second switch being connected to another of the fourth metal layer and the metal layer.
4. The power module structure of claim 3, wherein the th tile is a metal or thermally conductive insulating material and the second tile is a metal or thermally conductive insulating material.
5. The power module structure of claim 1, wherein the connecting bridges are evenly distributed between the th switch and the second switch.
6. The power module structure of claim 1, wherein the connecting bridges are collectively disposed on the same side of the th and second switches.
7. The power module structure of claim 1, further comprising:
an power terminal electrically connected to the third metal layer;
a second power terminal electrically connected to the th metal layer, and
and a third power terminal electrically connected to the connection bridge.
8. The power module structure of claim 7, wherein the th power terminal and the second power terminal have projections on the th or second reference planes that at least partially overlap.
9. The power module structure of claim 1, further comprising a signal terminal electrically connected to signal terminals of the th switch and the second switch by a bond wire or by a bond wire and a PCB board.
10. The power module architecture of claim 1, wherein each of the th switches and each of the second switches are connected in series to form pairs, and a plurality of pairs of the th switches and the second switches are arranged in parallel at .
11. The power module structure of claim 1, wherein current flowing through the th metal layer is in an opposite direction from current flowing through the third metal layer through a third reference plane, wherein the third reference plane cuts perpendicularly through the th overlap region.
12. The power module structure of claim 3, wherein said th switch and said second switch are both vertical devices, wherein,
the th end is connected to the third metal layer, the second end is connected to the th pad, and the th pad is connected to the second metal layer, and
the third end is connected to the fourth metal layer, the fourth end is connected to the second pad, and the second pad is connected to the th metal layer.
13. The power module structure of claim 3, wherein the th switch and the second switch are both planar devices, the power module structure further comprising a third pad, a th connection post, and a second connection post, wherein,
the th end is connected to the third metal layer;
the second terminal connected to a th connecting metal layer, the th connecting metal layer disposed on the second reference plane and adjacent to the third metal layer, the th connection stud connected to the th connecting metal layer and the second metal layer, and
the third terminal is connected to the third pad, the third pad is connected to a second connection metal layer, the second connection metal layer is disposed on the reference plane and adjacent to the metal layer, and the second connection stud is connected to the second connection metal layer and the fourth metal layer, and
the fourth end is connected to the second pad, and the second pad is connected to the th metal layer.
14. The power module structure of claim 3, wherein the th switch and the second switch are both planar devices, the power module structure further comprising a th connection post and a second connection post, wherein,
the th terminal connected to the third metal layer, the second terminal connected to a th connecting metal layer, the th connecting metal layer disposed on the second reference plane and adjacent to the third metal layer, the th connection stud connected to the th connecting metal layer and the second metal layer, and
the third terminal is connected to a second connection metal layer disposed on an th reference plane and adjacent to the th metal layer, the second connection stud is connected to the second connection metal layer and the fourth metal layer, and the fourth terminal is connected to the th metal layer.
15. The power module structure of claim 1, further comprising a clamp capacitor disposed between the reference plane and the second reference plane and electrically connected between the third metal layer and the metal layer.
16. The power module structure of claim 5, further comprising a clamp capacitor and a capacitor connecting block, wherein the clamp capacitor and the capacitor connecting block are located outside the connecting bridge, poles of the clamp capacitor are connected to the third metal layer, and poles of the clamp capacitor are electrically connected to the th metal layer through a third connecting metal layer and the corresponding capacitor connecting block.
17. The power module structure of claim 5, further comprising a clamp capacitor and a capacitor connection block, wherein the clamp capacitor and the capacitor connection block are located in a hollow portion of the connection bridge, poles of the clamp capacitor are connected to the third metal layer, and poles of the clamp capacitor are electrically connected to the th metal layer through a third connection metal layer and the corresponding capacitor connection block.
18. The power module structure of claim 6, further comprising a clamp capacitor and a capacitor connection block, wherein the clamp capacitor and the capacitor connection block are located between the th switch and the second switch, and wherein pole of the clamp capacitor is electrically connected to the third metal layer and pole is electrically connected to the th metal layer through the capacitor connection block.
19. The power module structure of claim 6, further comprising an upright clamp capacitor, wherein the upright clamp capacitor is located between the th switch and the second switch, and wherein of the upright clamp capacitor is electrically connected to the third metal layer and further is electrically connected to the th metal layer.
20. The power module structure of claim 1, wherein at least a portion of the th overlap region is located between a projection of a th switch region onto the th reference plane and a projection of a second switch region onto the th reference plane, wherein the th switch region is a minimum envelope region of the th switch and the second switch region is a minimum envelope region of the second switch.
21. The power module structure of claim 20, wherein a th signal terminal is connected to the th switch, a second signal terminal is connected to the second switch, and a wiring leading-out direction of the th signal terminal and a wiring leading-out direction of the second signal terminal extend respectively toward a direction away from the th overlapping area.
22. The power module structure of claim 7, wherein the th switch is linearly arranged along the th direction, the second switch is linearly arranged along the th direction, the th power terminal and the second power terminal are led out along the th direction, and the third power terminal is led out along the direction opposite to the th direction.
23. The power module structure of claim 3, wherein at least of the pad and the second pad comprises a pad plane in contact with a switch and a second pad plane in contact with a metal layer, wherein a projection of the second pad plane on the reference plane overlaps a projection of the pad plane on the reference plane, and a projection of the second pad plane on the reference plane is larger than a projection of the pad plane on the reference plane.
24. The power module structure of claim 23, wherein the side of the projection of the second pad plane at the reference plane protrudes outward 0.5-5 mm relative to the side of the projection of the reference plane at the pad plane.
25. The power module structure of claim 23, wherein at least sides of the pad plane define a pocket that is concave toward the second pad plane, the pocket including a fourth pad plane connected to the pad plane and a third pad plane connected to the fourth pad plane, the third pad plane spaced from the pad plane by more than 0.1mm, the third pad plane spaced from the second pad plane by more than 0.5 mm.
26. The power module structure of claim 1, wherein a projection of the connecting bridge at the th reference plane or the second reference plane overlaps the th overlap region.
27. The power module structure of claim 7, wherein there is an overlap in the projection of the reference plane or the second reference plane between the area where the th metal layer is connected to the second power terminal and the area where the third metal layer is connected to the power terminal.
28. The power module structure of claim 1, wherein the second metal layer and the fourth metal layer have a second overlapping area projected on the reference plane or the second reference plane, and the projection of the connection bridge on the reference plane or the second reference plane falls within the range of the second overlapping area.
29. The power module structure of claim 28, wherein the connecting bridge is a cylindrical connecting bridge.
30. The power module structure of claim 28, wherein a projection of the connecting bridge on the th reference plane or the second reference plane does not overlap with the th overlap region.
31. The power module structure of claim 28 wherein said th overlapping areas and said second overlapping areas are staggered.
32, power module arrangement, comprising:
an th metal layer disposed on the th reference plane;
a second metal layer disposed on a second reference plane, wherein the second reference plane is parallel to the th reference plane;
a third metal layer disposed on the second reference plane and adjacent to the second metal layer;
a fourth metal layer disposed between the th reference plane and the second reference plane and parallel to the th reference plane or the second reference plane;
a th switch including a th terminal and a second terminal, the th terminal being electrically connected to the second metal layer, the second terminal being electrically connected to the th metal layer, and
a second switch comprising a third terminal electrically connected to the th metal layer and a fourth terminal electrically connected to the third metal layer;
wherein the fourth metal layer is electrically connected to metal layers of the second and third metal layers, the fourth metal layer has an overlapping region with a projection of another metal layer of the second and third metal layers onto the reference plane or the second reference plane, and a current flowing through the fourth metal layer is in an opposite direction to a current flowing through the another metal layer.
33. The power module structure of claim 32, wherein at least a portion of the overlap region is located between a projection of a th switch region on a reference plane and a projection of a second switch region on a reference plane, wherein the th switch region is a minimum envelope region of the th switch and the second switch region is a minimum envelope region of the second switch.
34. The power module structure of claim 33, wherein a th signal terminal is connected to the th switch, a second signal terminal is connected to the second switch, and a lead-out direction of the th signal terminal and a lead-out direction of the second signal terminal extend in directions away from the overlapping area, respectively.
35. The power module structure of claim 32, further comprising:
an th power terminal electrically connected to the second metal layer;
a second power terminal electrically connected to the third metal layer; and
a third power terminal electrically connected to the th metal layer.
36. The power module structure of claim 35, wherein the th switch comprises a linear arrangement along the th direction, the second switch comprises a linear arrangement along the th direction, the th power terminal, the second power terminal are led out along the th direction, and the third power terminal is led out along the direction opposite to the th direction.
37. The power module structure of claim 32, further comprising:
a th pad connected to the th switch at , the th pad connected to of the second metal layer and the th metal layer, the th switch connected to the other of the second metal layer and the th metal layer, and
and a second pad connected to , the second pad being connected to of the third metal layer and the metal layer, the second switch being connected to the other of the third metal layer and the metal layer, wherein the pad and the second pad are both thermally conductive conductors.
38. The power module structure of claim 37 wherein at least of the pads and the second pads comprises a pad plane in contact with the switch and a second pad plane in contact with the metal layer, wherein a projection of the second pad plane onto the reference plane partially overlaps a projection of the pad plane onto the reference plane, and wherein a projection of the second pad plane onto the reference plane is greater than a projection of the pad plane onto the reference plane.
39. The power module structure of claim 38, wherein the side of the projection of the second pad plane at the reference plane protrudes 0.5-5 mm outward relative to the side of the projection of the reference plane at the pad plane.
40. The power module structure of claim 38, wherein at least sides of the pad plane define a pocket that is concave toward the second pad plane, the pocket including a fourth pad plane connected to the pad plane and a third pad plane connected to the fourth pad plane, the third pad plane spaced from the pad plane by more than 0.1mm, the third pad plane spaced from the second pad plane by more than 0.5 mm.
Technical Field
The invention relates to the technical field of power electronic equipment, in particular to power module structures.
Background
The goal has been a significant pursuit by those skilled in the art for ensuring long-term stable operation of power electronics and improving the power conversion efficiency of power electronics, and it is well established that finds widespread application in the power, electronics, motor, and energy industries as an important component of power conversion.
The performance of a power semiconductor device, which is a core component of modern power electronic equipment, directly determines the reliability and power conversion efficiency of a power electronic device. In order to design a more reliable, safe, and high-performance power electronic device, it is desirable that the power semiconductor device have characteristics of low voltage stress and low power loss. Power semiconductor devices used in power electronic devices operate in a switching state, and the high frequency of switching action causes a high rate of current change di/dt in the line. According to the circuit principle, a varying current acts on the parasitic inductance LstrayWill generate a voltage VsThe calculation formula is as follows:
Vs＝Lstraydi/dt
therefore, under the condition that the current change rate is not changed, a higher voltage peak value can be generated by larger parasitic inductance, and the reliability of the device can be reduced by an excessively high voltage peak value, so that the turn-off loss of the device is increased; after the line parasitic inductance is reduced, the device is allowed to use smaller driving resistance to achieve faster switching speed and reduce switching loss so as to improve the efficiency of the converter.
In summary, the requirement of reducing the parasitic inductance on the line is raised, and the parasitic inductance is related to the packaging of the power semiconductor device, therefore, reasonable packaging structures are required to reduce the parasitic inductance.
Disclosure of Invention
It is an object of the present invention to provide power module structures, thereby overcoming the above-mentioned technical problems due to limitations and disadvantages of the related art, at least to the extent of .
Additional features and advantages of the invention will be set forth in the detailed description which follows, or may be learned by practice of the invention.
According to an th aspect of the invention, there are provided power module structures, including:
an th metal layer disposed on the th reference plane;
a second metal layer disposed at the reference plane and adjacent to the metal layer;
a third metal layer disposed on a second reference plane, wherein the second reference plane is parallel to the th reference plane;
the fourth metal layer is arranged on the second reference plane and is adjacent to the third metal layer, and the fourth metal layer is electrically connected with the second metal layer through a connecting bridge;
a switch including a terminal and a second terminal, the terminal being electrically connected to the third metal layer and the second terminal being electrically connected to the second metal layer, and
a second switch comprising a third terminal electrically connected to the fourth metal layer and a fourth terminal electrically connected to the th metal layer;
wherein a th overlapping region is projected by the th metal layer and the third metal layer on the th reference plane or the second reference plane, and a current flowing through the th metal layer is opposite to a current flowing through the third metal layer.
Optionally, the package structure further comprises an th substrate and a second substrate, wherein the th metal layer and the second metal layer are disposed on the lower surface of the th substrate, and the third metal layer and the fourth metal layer are disposed on the upper surface of the second substrate.
Optionally, the method further comprises:
a th pad connected to the th switch at , the th pad connected to of the third metal layer and the second metal layer, the th switch connected to another of the third metal layer and the second metal layer, and
a second pad connected to with the second switch, the second pad being connected to of the fourth metal layer and the metal layer, the second switch being connected to another of the fourth metal layer and the metal layer.
Optionally, the th pad is a metal block or a heat conducting and insulating material block, and the second pad is a metal block or a heat conducting and insulating material block.
Optionally, the connecting bridges are evenly distributed between the th switch and the second switch.
Optionally, the connecting bridges are collectively disposed on the same side of the th switch and the second switch.
Optionally, the method further comprises:
an power terminal electrically connected to the third metal layer;
a second power terminal electrically connected to the th metal layer, and
and a third power terminal electrically connected to the connection bridge.
Optionally, the th power terminal and the second power terminal have projections on the th reference plane or the second reference plane that at least partially overlap.
Optionally, the switch further comprises a signal terminal, wherein the signal terminal is electrically connected to the th switch and the signal terminal of the second switch through a bonding wire or through a bonding wire and a PCB board.
Optionally, each of the switches and each of the second switches are connected in series to form pairs, and a plurality of pairs of the switches and the second switches are arranged in parallel at .
Optionally, a current flowing through the th metal layer is in an opposite direction than a current flowing through the third metal layer through a third reference plane, wherein the third reference plane perpendicularly cuts the th overlap region.
Optionally, the th switch and the second switch are both vertical devices, wherein,
the th end is connected to the third metal layer, the second end is connected to the th pad, and the th pad is connected to the second metal layer, and
the third end is connected to the fourth metal layer, the fourth end is connected to the second pad, and the second pad is connected to the th metal layer.
Optionally, the th switch and the second switch are both planar devices, the power module structure further includes a third pad, a th connection post and a second connection post, wherein,
the th end is connected to the third metal layer;
the second terminal connected to a th connecting metal layer, the th connecting metal layer disposed on the second reference plane and adjacent to the third metal layer, the th connection stud connected to the th connecting metal layer and the second metal layer, and
the third terminal is connected to the third pad, the third pad is connected to a second connection metal layer, the second connection metal layer is disposed on the reference plane and adjacent to the metal layer, and the second connection stud is connected to the second connection metal layer and the fourth metal layer, and
the fourth end is connected to the second pad, and the second pad is connected to the th metal layer.
Optionally, the th switch and the second switch are both planar devices, the power module structure further comprising a th connection post and a second connection post, wherein,
the th terminal connected to the third metal layer, the second terminal connected to a th connecting metal layer, the th connecting metal layer disposed on the second reference plane and adjacent to the third metal layer, the th connection stud connected to the th connecting metal layer and the second metal layer, and
the third terminal is connected to a second connection metal layer disposed on an th reference plane and adjacent to the th metal layer, the second connection stud is connected to the second connection metal layer and the fourth metal layer, and the fourth terminal is connected to the th metal layer.
Optionally, a clamping capacitor is further included, the clamping capacitor being disposed between the th reference plane and the second reference plane and being electrically connected between the third metal layer and the th metal layer.
Optionally, the power module structure further includes a clamp capacitor and a capacitor connection block, wherein the clamp capacitor and the capacitor connection block are located outside the connection bridge, poles of the clamp capacitor are connected to the third metal layer, and poles of the clamp capacitor are electrically connected to the th metal layer through a third connection metal layer and the corresponding capacitor connection block.
Optionally, the power module structure further includes a clamp capacitor and a capacitor connecting block, wherein the clamp capacitor and the capacitor connecting block are located in a hollow portion of the connecting bridge, poles of the clamp capacitor are connected to the third metal layer, and poles of the clamp capacitor are electrically connected to the th metal layer through a third connecting metal layer and the corresponding capacitor connecting block.
Optionally, the power module structure further includes a clamp capacitor of a lay-flat type and a capacitor connection block, wherein the clamp capacitor of the lay-flat type and the capacitor connection block are located between the th switch and the second switch, pole of the clamp capacitor of the lay-flat type is electrically connected to the third metal layer, and pole is electrically connected to the th metal layer through the capacitor connection block.
Optionally, the power module structure further comprises an upright clamping capacitor, wherein the upright clamping capacitor is located between the th switch and the second switch, of the upright clamping capacitor is electrically connected to the third metal layer, and is electrically connected to the th metal layer.
Optionally, at least a portion of the th overlap region is located between a projection of a th switch region onto the th reference plane and a projection of a second switch region onto the th reference plane, where the th switch region is a minimum envelope region of the th switch and the second switch region is a minimum envelope region of the second switch.
Optionally, a signal terminal is connected to the th switch, a second signal terminal is connected to the second switch, and the wiring leading-out direction of the th signal terminal and the wiring leading-out direction of the second signal terminal extend respectively toward a direction away from the th overlapping region.
Optionally, the th switch is linearly arranged along the th direction, the second switch is linearly arranged along the th direction, the th power terminal and the second power terminal are led out along the th direction, and the third power terminal is led out along the reverse direction of the th direction.
Optionally, at least of the th pad and the second pad comprises a th pad plane in contact with the switch and a second pad plane in contact with the metal layer, wherein a projection of the second pad plane on the th reference plane partially overlaps a projection of the th pad plane on the th reference plane, and a projection of the second pad plane on the th reference plane is larger than a projection of the th pad plane on the th reference plane.
Optionally, the side of the projection of the second pad plane on the th reference plane protrudes 0.5-5 mm outward relative to the side of the projection of the th pad plane on the th reference plane.
Optionally, at least sides of the pad plane are formed with a pocket that is concave toward the second pad plane, the pocket including a fourth pad plane connected to the pad plane and a third pad plane connected to the fourth pad plane, the third pad plane being spaced from the pad plane by more than 0.1mm, the third pad plane being spaced from the second pad plane by more than 0.5 mm.
Optionally, there is an overlap of a projection of the connecting bridge at the th reference plane or the second reference plane with the th overlapping region.
Optionally, there is an overlap between a region where the th metal layer is connected to the second power terminal and a region where the th metal layer is connected to the th power terminal in a projection of the th reference plane or the second reference plane.
Optionally, the second metal layer and the fourth metal layer have a second overlapping area on the th reference plane or the second reference plane, and the projection of the connecting bridge on the th reference plane or the second reference plane falls within the range of the second overlapping area.
Optionally, the connecting bridge is a cylindrical connecting bridge.
Optionally, a projection of the connecting bridge on the th reference plane or the second reference plane does not overlap with the th overlap region.
Optionally, the th overlapping area and the second overlapping area are staggered.
By adopting the power module structure of the aspect of the invention, since the overlapping region is formed by the projection of the th metal layer and the third metal layer on the th reference plane or the second reference plane, and the direction of the current flowing through the th metal layer is opposite to the direction of the current flowing through the third metal layer, the effect of inductance cancellation is well realized, and the parasitic inductance of the module is reduced.
The second aspect of the present invention further provides power module structures, including:
an th metal layer disposed on the th reference plane;
a second metal layer disposed on a second reference plane, wherein the second reference plane is parallel to the th reference plane;
a third metal layer disposed on the second reference plane and adjacent to the second metal layer;
a fourth metal layer disposed between the th reference plane and the second reference plane and parallel to the th reference plane or the second reference plane;
a th switch including a th terminal and a second terminal, the th terminal being electrically connected to the second metal layer, the second terminal being electrically connected to the th metal layer, and
a second switch comprising a third terminal electrically connected to the th metal layer and a fourth terminal electrically connected to the third metal layer;
wherein the fourth metal layer is electrically connected to metal layers of the second and third metal layers, the fourth metal layer has an overlapping region with a projection of another metal layer of the second and third metal layers onto the reference plane or the second reference plane, and a current flowing through the fourth metal layer is in an opposite direction to a current flowing through the another metal layer.
Optionally, at least a portion of the overlap region is located between a projection of an th switch region on a th reference plane and a projection of a second switch region on a th reference plane, wherein the th switch region is a minimum envelope region of the th switch, and the second switch region is a minimum envelope region of the second switch.
Optionally, a signal terminal is connected to the th switch, a second signal terminal is connected to the second switch, and the th signal terminal and the second signal terminal are respectively extended in a direction away from the overlapping region.
Optionally, the method further comprises:
an th power terminal electrically connected to the second metal layer;
a second power terminal electrically connected to the third metal layer; and
a third power terminal electrically connected to the th metal layer.
Optionally, the th switch comprises a switch arranged linearly along the th direction, the second switch is arranged linearly along the th direction, the th power terminal and the second power terminal are led out along the th direction, and the third power terminal is led out along the direction opposite to the th direction.
Optionally, the method further comprises:
a th pad connected to the th switch at , the th pad connected to of the second metal layer and the th metal layer, the th switch connected to the other of the second metal layer and the th metal layer, and
and a second pad connected to , the second pad being connected to of the third metal layer and the metal layer, the second switch being connected to the other of the third metal layer and the metal layer, wherein the pad and the second pad are both thermally conductive conductors.
Optionally, at least of the th pad and the second pad comprises a th pad plane in contact with the switch and a second pad plane in contact with the metal layer, wherein a projection of the second pad plane on the th reference plane partially overlaps a projection of the th pad plane on the th reference plane, and a projection of the second pad plane on the th reference plane is larger than a projection of the th pad plane on the th reference plane.
Optionally, the side of the projection of the second pad plane on the th reference plane protrudes 0.5-5 mm outward relative to the side of the projection of the th pad plane on the th reference plane.
Optionally, at least sides of the pad plane are formed with a pocket that is concave toward the second pad plane, the pocket including a fourth pad plane connected to the pad plane and a third pad plane connected to the fourth pad plane, the third pad plane being spaced from the pad plane by more than 0.1mm, the third pad plane being spaced from the second pad plane by more than 0.5 mm.
By adopting the power module structure of the second aspect of the present invention, since the projection of the fourth metal layer and the second metal layer or the third metal layer on the th reference plane or the second reference plane has an overlapping area, and the direction of the current flowing through the fourth metal layer is opposite to the direction of the current flowing through the second metal layer or the third metal layer, the effect of inductance cancellation is well achieved, and the parasitic inductance of the module is reduced.
To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention, which are only used to illustrate the present invention and not to limit the scope of the claims of the present invention.
Drawings
The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Fig. 1 is an equivalent circuit diagram of half-bridge modules in the prior art;
FIG. 2 is a schematic diagram of a packaged power module configuration according to an embodiment of the invention;
FIG. 3 is a diagram illustrating the structure of a power module according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view taken along line A-A of FIG. 2;
FIG. 5 is a schematic view of the direction of current flow in FIG. 4;
fig. 6 is an exploded view of the power module structure of th embodiment of the present invention;
FIG. 7 is a diagram illustrating a power module according to a second embodiment of the present invention;
fig. 8 is an exploded view of a power module structure of a second embodiment of the present invention;
FIG. 9 is a cross-sectional view taken along line B-B of FIG. 7;
fig. 10 is a schematic diagram of a power module structure according to a third embodiment of the present invention;
fig. 11 is an exploded view of a power module structure of a third embodiment of the present invention;
fig. 12 is a schematic diagram of a power module structure according to a fourth embodiment of the present invention;
fig. 13 is a schematic diagram of a power module structure according to a fifth embodiment of the present invention;
FIG. 14 is an equivalent circuit diagram of a half-bridge module with clamping capacitors added according to the present invention;
fig. 15 is a schematic diagram of a power module structure according to a sixth embodiment of the present invention;
fig. 16 is a schematic diagram of a power module structure according to a seventh embodiment of the present invention;
FIG. 17 is an enlarged view of the boxed area of FIG. 16;
FIG. 18 is a cross-sectional view taken in the direction D-D of FIG. 16;
fig. 19 is a schematic diagram of a power module structure according to an eighth embodiment of the present invention;
FIG. 20 is a cross-sectional view taken in the direction E-E of FIG. 19;
fig. 21 is a schematic view of a power module structure according to a ninth embodiment of the present invention;
FIG. 22 is a cross-sectional view taken in the direction F-F of FIG. 21;
FIG. 23 is an equivalent circuit diagram of a half bridge module employing four pairs of switches;
fig. 24 is a schematic view of a power module structure according to a tenth embodiment of the present invention;
fig. 25 and 26 are partial exploded views of a power module structure of a tenth embodiment of the present invention;
FIG. 27 is a sectional view taken in the direction H-H in FIG. 24;
FIG. 28 is a sectional view taken in the direction G-G of FIG. 24;
FIG. 29 is a schematic view of the direction of current flow shown in FIG. 27;
fig. 30 is an exploded view of a power module structure of a tenth embodiment of the present invention;
fig. 31 is a schematic diagram of a power module structure according to a tenth embodiment of the invention;
fig. 32 is a schematic view of a power module structure according to a twelfth embodiment of the present invention;
FIGS. 33-34 are schematic structural views of the th pad used in various embodiments of the present invention;
FIGS. 35-43 are schematic views of various alternative configurations of the head block of the present invention.
Reference numerals:
21 the th connection column of the
22
23
24
25
251, ,
252
253
254
26 second pads 511-514 connecting material
27 connecting
28
281
2811
2812
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2821 third terminal 74 fourth metal layer (example 11)
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31 second metal layer of Power terminal 82 (example 12)
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33
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar structures in the drawings, and thus detailed descriptions thereof will be omitted.
Herein, the connection between two components may mean that the two components are directly connected, i.e., directly contacted or attached, or that the two components are indirectly connected, i.e., connected with each other through other materials; that is, they may be physically or electrically connected. In different embodiments, they have the corresponding meanings.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in or more embodiments in the following description, however, it will be recognized by one skilled in the art that the present invention may be practiced without the or more of the specific details, or with other structures, components, steps, methods, etc. in other instances, well-known structures, components, or operations are not shown or described in detail to avoid obscuring aspects of the invention.
To solve the problems of the prior art, embodiments of the present invention provide power module structures, which include a metal layer, a second metal layer, a third metal layer, a fourth metal layer, a th switch and a second switch, wherein the th metal layer is disposed on a th reference plane, the second metal layer is disposed on a th reference plane and adjacent to the metal layer, the third metal layer is disposed on a second reference plane, and the second reference plane is parallel to the th reference plane, the fourth metal layer is disposed on the second reference plane and adjacent to the third metal layer, the fourth metal layer is electrically connected to the second metal layer through a connecting bridge, the 897 th switch includes a th end and a second end, the th end is electrically connected to the third metal layer, the second end is electrically connected to the second metal layer, the second switch includes a third end and a fourth end, the third end is electrically connected to the fourth metal layer, the third metal layer is electrically connected to the third metal layer, the second end is electrically connected to the third metal layer, the third metal layer is electrically connected to the third metal layer, the inductor 5838, the third metal layer has a reduced current flow through the third reference plane, and the third metal layer has a reduced current flow through the third metal layer , and the third metal layer, and the parasitic current flow is reduced, and the third metal layer has reduced, and the third metal layer, the.
In embodiments to shown in fig. 1 to 30, the
FIG. 1 shows an equivalent circuit diagram of a prior art half-bridge module, in which a th switch S1 is connected in series with a second switch S2, wherein the th switch S1 includes a th terminal and a second terminal, the second switch S2 includes a third terminal and a fourth terminal, a P pole is electrically connected to the th terminal of the th switch S1, an N pole is electrically connected to the fourth terminal of the second switch S2, and the second terminal of the th switch S1 is electrically connected to the third terminal of the second switch S2 and is commonly connected to an O pole, as shown in FIG. 1.
Fig. 2 to 6 are schematic diagrams illustrating a power module structure according to an embodiment of the invention, in which the power module structure includes a
As shown in fig. 4, within the power module structure, the
As shown in FIG. 5, the current directions are opposite, that is, at least third reference plane perpendicular to the or second reference plane exists, the third reference plane vertically cuts the -th overlapping area of the
As shown in fig. 3-5, in this embodiment, at least a portion of the th overlap region is located between the projection of the th switch region on the th reference plane and the projection of the second switch region on the th reference plane, where the th switch region is the minimum envelope region of the
The configuration has the advantages that the th switch region and the second switch region have empty spaces on two sides and can be used as the output end regions of the signal terminals of the
In this embodiment, the
It is noted that in other embodiments, the power module structure may be provided without a substrate, and when no substrate is provided, the metal layers of the power module are made of lead frames, which saves more material, the power device 28 is connected to the metal layer provided on the inner side of the second substrate 22 by a connecting material 511, wherein the connecting material 511 may be solder, sintered silver or conductive silver paste, the power device 28 is connected to the metal layer provided on the inner side of the substrate 21 by a pad 1, a pad 86526 and a connecting material 512, wherein the pad and the pad 26 are both thermal and electrical conductors, for example, the power device 28 is connected to the metal layer provided on the inner side of the substrate by a pad , a pad 25, a pad 86526 and a pad 512, wherein the pad and the pad 26 are both metal blocks, and the pad 7 is made of copper, aluminum, molybdenum, tungsten, copper alloy or molybdenum alloy, and the distance between the pad 513 is controlled by a connecting material such as a metal pad 6327, and a parasitic switch 26, and a corresponding pad 6327, and a switch 26 is also able to adjust the distance between the substrate 7 and the substrate 23, and the substrate 9, and the switch 26 is controlled by a similar way that the aforementioned embodiments, and the distance between the substrate may be adjusted by a parasitic switch 26, and the metal layer may be adjusted by a metal layer 9, and the substrate 9, and the same.
In this embodiment, the switch 281 and the second switch 282 are vertical devices, such as IGBT, MOSFET or diode, the signal terminal 23 is connected to the signal terminal of the power device 28 through the bonding wire 24 and the metal layer disposed inside the second substrate 22, a PCB may be disposed outside the power device 28, the signal terminal 23 is connected to the signal terminal of the power device 28 through the bonding wire 24 and the PCB, the power terminal 31 is electrically connected to the 0 switch 281 through the third metal layer 43 disposed inside the second substrate 22, the second power terminal 32 is electrically connected to the second switch 282 through the metal layer 41 disposed inside the substrate 21, the switch 281 is electrically connected to the second switch 282 through the connecting bridge 27, the third power terminal 33 is connected to the connecting bridge 27 through the fourth metal layer 44 disposed inside the second substrate 22, or directly connected to the connecting bridge 27, or the power terminal 33 and the connecting bridge 27 are , wherein the power terminal 31 and the second power terminal 31 are uniformly overlapped on the second substrate 22, or the second power terminal 31 and the second switch 27, or the parasitic metal alloy 27 may be made of a lower inductance metal alloy, such as an alloy 734, a parasitic metal alloy, a parasitic material , or a metal alloy material, or the like.
Fig. 7 to 9 are schematic diagrams showing a power module structure according to a second embodiment of the present invention, which is similar to the power module structure of the embodiment, in which the
Fig. 9 is a sectional view taken along the direction B-B of fig. 7, the
Fig. 10 to 11 are schematic diagrams showing a power module structure according to a third embodiment of the present invention, which is similar to the power module structure of the embodiment except that the projection of the
FIG. 12 shows a schematic diagram of a power module structure according to a fourth embodiment of the present invention, which is similar to the power module structure of the embodiment except that the -
The power module structure of this embodiment further includes a
In this embodiment, the
Fig. 13 is a schematic diagram illustrating a power module structure according to a fifth embodiment of the invention, which is similar to the power module structure of the fourth embodiment, wherein the
The power module structure of this embodiment further includes a
In this embodiment, the
Fig. 14 shows an equivalent circuit diagram with a clamping capacitance. Placing a clamping capacitor C in the moduleinWhen the device is turned off, the area surrounded by the corresponding high-frequency loop is reduced, and the loop parasitic inductance is also reduced. In particular, no clamping capacitor C is placed within the moduleinWhile, the parasitic inductance of the loop is Lout+Lin(ii) a Placing a clamping capacitor C in the moduleinThen, the loop parasitic inductance value becomes Lin and the inductance value decreases.
Fig. 15 shows a schematic diagram of a power module structure with a clamping capacitor according to a sixth embodiment of the present invention, which is similar to the power module structure of the embodiment, except that the power module structure further includes a clamping
In this embodiment, the clamping
Fig. 16 to 18 are schematic diagrams showing a power module structure according to a seventh embodiment of the present invention, which is similar to the power module structure of the sixth embodiment and includes a
Fig. 18 is a cross-sectional view taken along the direction D-D in fig. 16, the
Fig. 19 to 20 are schematic diagrams illustrating a power module structure according to an eighth embodiment of the invention, which is similar to the structure of the second embodiment, wherein the connecting
Fig. 20 is a cross-sectional view taken along the direction E-E in fig. 19, where there are only power electrodes on the upper and lower sides of the
Fig. 21 to 22 are schematic diagrams illustrating a power module structure according to a ninth embodiment of the invention, which is similar to the structure of the second embodiment, wherein the connecting
Fig. 22 is a cross-sectional view along the direction F-F in fig. 21, the
Fig. 23 is an equivalent circuit diagram of a half-bridge module having four pairs of switches, wherein switches S11, S12, S13 and S14 correspond to switch 281 of , and switches S21, S22, S23 and S24 correspond to switch 282, in comparison with the embodiment, the embodiment is different from the embodiment in that not only do the projections of the metal layer 41 and the third metal layer 43 on the reference plane or the second reference plane have the -th overlapping region, but also the projections of the second metal layer 42 and the fourth metal layer on the reference plane or the second reference plane have the second overlapping region, the projection of the connecting bridge 27 on the reference plane or the second reference plane falls within the range of the second overlapping region, because of the presence of the second overlapping region, the connecting bridge 27 does not need to be designed as a pillar-shaped bridge, and the connecting bridge 27 is easily connected to the power module by the connecting bridge 6327 and the connecting bridge 27 is more easily connected to the power module by the pillar-shaped connecting bridge 27, and the connecting bridge 27 is more easily connected to the power module 281, and the connecting module is more easily connected to the pillar-shaped connecting module 281, and the connecting module 281 is more easily than the pillar-shaped connecting module 281, and the pillar-shaped connecting bridge 27 is directly connected to the pillar-shaped connecting module.
In this embodiment, the projection of the
As shown in fig. 29, the current flowing through the
In this embodiment, the overlapping regions of the third metal layer 41 and the second metal layer 42 are alternately disposed in a staggered manner, that is, as shown in fig. 30, at the boundary between the th metal layer 41 and the second metal layer 42, a zigzag boundary is formed, the boundary between the th metal layer 41 and the second metal layer 42 alternately protrudes forward, similarly, at the boundary between the third metal layer 43 and the fourth metal layer 44, the third metal layer 43 and the fourth metal layer 44 alternately protrude forward, the boundary protruding portion of the th metal layer 41 and the boundary protruding portion of the third metal layer 43 are projected on the reference plane or the second reference plane to form the overlapping region of the first metal layer , and the boundary protruding portion of the second metal layer 42 and the boundary protruding portion of the fourth metal layer 44 are projected on the reference plane or the second reference plane to form the overlapping regions of the second metal, the number and distribution of the connection bridges 27 are not limited to those shown in fig. 30, the pillar-shaped connection bridges 27 are uniformly distributed between the second switches and , and the second conductive interconnections may be made of the second copper alloy material , such as molybdenum alloy, copper alloy, tungsten alloy, copper alloy, tungsten alloy, molybdenum alloy, copper alloy.
A tenth embodiment and a twelfth embodiment of the present invention are described further below in connection with fig. 31 and 32, .
In this embodiment, the
In this embodiment, the
The
The current directions are opposite, namely, at least third reference plane perpendicular to the reference plane or the second reference plane exists, the third reference plane vertically cuts an overlapped area of the
Similarly to the embodiment, in this embodiment, at least part of the overlap region is between the th switch region projection onto the th reference plane and the th switch region projection onto the th reference plane, as shown in FIG. 31, where the th switch region is the
The arrangement has the advantages that the two sides of the th switch area and the second switch area are provided with empty spaces which can be used as the output end areas of the signal terminals of the
In this embodiment, , the
The
In this embodiment,
In this embodiment, the
The
The current directions are opposite, namely, at least third reference planes which are perpendicular to the reference plane or the second reference plane exist, the third reference planes vertically cut the overlapping area of the
Similarly to the embodiment, in this embodiment, at least part of the overlap region is between the projection of the switch region on the reference plane and the second switch region on the reference plane, as shown in FIG. 32, where the th switch region is the smallest envelope region of the
The arrangement has the advantages that the two sides of the th switch area and the second switch area are provided with empty spaces which can be used as the output end areas of the signal terminals of the
In this embodiment, in steps, the
The
As shown in fig. 33 and 34, the structure of the th block used in the embodiments of the present invention is schematically illustrated, and here, the connection relationship of the th block in the embodiment is taken as an example, it is understood that the structure of the th block can be applied to the above embodiments to combine into a new technical solution, and all of them fall within the protection scope of the present invention.
As shown in FIG. 33, the
Preferably, the second
At least side of the
Here, there are only embodiments of the
As shown in fig. 35, the projection of the
In order to increase the bonding area between the
The projection of the
In the above configuration, the junction transition between the th plane and the third plane is a 90 ° right angle, which also applies to a rounded transition, as shown in fig. 42, and a transition angle greater than 90 °, as shown in fig. 43.
For example, the
In this embodiment, the second pad has a recessed land formed at least on the side of the fifth pad plane and recessed toward the sixth pad plane, the recessed land including an eighth pad plane connected to the fifth pad plane and a seventh pad plane connected to the eighth pad plane, the seventh pad plane being spaced from the fifth pad plane by a distance greater than 0.1mm, and the seventh pad plane being spaced from the sixth pad plane by a distance greater than 0.5 mm.
, the
In addition, the
In summary, by adopting the power module structure of each embodiment of the present invention, since the projections of the P-pole metal layer and the N-pole metal layer on the th reference plane or the second reference plane have an overlapping region, and the direction of the current flowing through the P-pole is opposite to that of the current flowing through the N-pole, the cancellation of the inductance is well achieved, and the parasitic inductance of the module is reduced.
The present invention has been described in the embodiments, however, the embodiments are only examples for implementing the present invention and do not limit the scope of the present invention. Rather, it is intended that all such modifications and variations be included within the spirit and scope of this invention.
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