阅读说明：本技术 一种基于低介电常数车削膜制备复合介质板的工艺 (Process for preparing composite dielectric plate based on low dielectric constant turning film ) 是由 庞子博 张伟 高枢健 纪秀峰 魏西 于 2019-11-01 设计创作，主要内容包括：本发明公开了一种基于低介电常数车削膜制备复合介质板的工艺。该工艺为：将幅面相同的、体积分数为20.0-65.0%的低介电常数含有二氧化硅陶瓷粉的全氟树脂车削膜与体积分数为9.0-70.0%的含聚四氟乙烯的玻纤布浸渍片、体积分数为10.0-56.5%全氟树脂车削膜按上下对称层叠成介质层；在介质层上下表面覆盖铜箔；采用温度为360-390℃、压强3-13MPa、热压时间2-5h的烧结过程,使全氟树脂车削膜发生熔融粘接并最终定形,制备出介电常数为2.14-2.74的复合介质板。该板具有介电常数低、介质损耗小、热膨胀系数较低的特点,可耐受酸碱腐蚀、冷热冲击等极端环境条件,广泛应用于通信等相关领域。(The invention discloses a process for preparing a composite dielectric plate based on a low dielectric constant turning film. The process comprises the following steps: laminating a perfluorinated resin turning film with the same breadth, the volume fraction of 20.0-65.0%, the low dielectric constant and containing silicon dioxide ceramic powder, a polytetrafluoroethylene-containing glass fiber cloth impregnated sheet with the volume fraction of 9.0-70.0% and a perfluorinated resin turning film with the volume fraction of 10.0-56.5% in an up-and-down symmetrical manner to form a dielectric layer; covering copper foils on the upper surface and the lower surface of the dielectric layer; the perfluorinated resin turning film is fused, bonded and finally shaped by adopting a sintering process with the temperature of 360-390 ℃, the pressure of 3-13MPa and the hot pressing time of 2-5h, and the composite dielectric plate with the dielectric constant of 2.14-2.74 is prepared. The plate has the characteristics of low dielectric constant, small dielectric loss and low thermal expansion coefficient, can resist extreme environmental conditions such as acid-base corrosion, cold and hot shock and the like, and is widely applied to related fields such as communication and the like.)

1. A process for preparing a composite dielectric plate based on a low dielectric constant turning film is characterized by comprising the following steps of: the preparation process of the composite dielectric plate comprises the following steps:

step one, laminating and arranging a polytetrafluoroethylene resin turning film or a perfluoro (ethylene-propylene) copolymer resin turning film with the same breadth size, the low dielectric constant and the silicon dioxide ceramic powder, the volume fraction of which is 20.0-65.0%, and a polytetrafluoroethylene-containing glass fiber cloth impregnated sheet with the volume fraction of 9.0-70.0%, a polytetrafluoroethylene resin turning film or a perfluoro (ethylene-propylene) copolymer resin turning film with the volume fraction of 10.0-56.5% according to an up-down symmetrical structure to form a plurality of dielectric layers;

covering a low-profile-factor copper foil with the same breadth dimension on the upper surface and the lower surface of the laminated multi-layer dielectric layer respectively, wherein the side with larger profile factor of the copper foil faces the dielectric layer;

and step three, adopting a hot-pressing sintering process with the temperature of 360-390 ℃, the pressure of 3-13MPa and the hot-pressing time of 2-5h to melt, bond and finally shape the polytetrafluoroethylene resin turning film or the perfluoro (ethylene-propylene) copolymer resin turning film, and preparing the composite dielectric plate with the dielectric constant of 2.14-2.74.

2. The process for preparing a composite dielectric plate based on the low dielectric constant turning film according to claim 1, wherein the process comprises the following steps: the mass fraction of the silicon dioxide ceramic powder in the polytetrafluoroethylene resin turning film or the perfluoro (ethylene-propylene) copolymer resin turning film is 8-55%, and the average grain diameter is 100nm-30 mu m.

3. The process for preparing a composite dielectric plate based on the low dielectric constant turning film according to claim 1, wherein the process comprises the following steps: the glass fiber cloth impregnated sheet adopts electronic grade glass fiber cloth.

4. The process for preparing a composite dielectric plate based on the low dielectric constant turning film according to claim 1, wherein the process comprises the following steps: the mass fraction of the polytetrafluoroethylene in the glass fiber cloth impregnated sheet is 40-75%.

5. The process for preparing a composite dielectric plate based on the low dielectric constant turning film according to claim 1, wherein the process comprises the following steps: the nominal thickness of the low-profile-factor copper foil is 18 mu m or 35 mu m, and the profile factor of the side with the larger profile factor is less than or equal to 8 mu m.

Technical Field

The invention relates to a preparation method of a composite dielectric plate, in particular to a process for preparing the composite dielectric plate based on a low dielectric constant turning film.

Background

With the rapid development of the field of integrated circuits, the high-frequency composite dielectric plate plays a fundamental role in realizing the miniaturization and high-frequency of products, and is often the property of the high-frequency composite dielectric plateThe design effort of the circuit can be determined. The low dielectric constant composite dielectric plate has wide application in the high frequency and high speed fields. The silicon dioxide ceramic powder has a low dielectric constant (less than 4), and is very suitable for modulating the dielectric property, the mechanical property and the thermal property of the dielectric layer of the composite board. Generally, the doping of silicon dioxide in the dielectric layer of the composite board has important functions of reducing the thermal expansion coefficient of the board, improving the thermal conductivity and the like. Perfluororesins (e.g., PTFE, FEP, etc.) have low dielectric constants (about 2) and dielectric losses (10)^-4~10^-3Magnitude), is the first choice resin material for preparing the low dielectric constant composite dielectric plate material, and has wide application.

Disclosure of Invention

The invention aims to provide a process for preparing a composite dielectric plate based on a low dielectric constant turning film, and the process is adopted to successfully prepare the composite dielectric plate with the dielectric constant of 2.14-2.74.

The invention is realized by the following technical scheme: a process for preparing a composite dielectric plate based on a low dielectric constant turning film is characterized by comprising the following steps of: the preparation process of the composite dielectric plate comprises the following steps:

step one, laminating and arranging a polytetrafluoroethylene resin turning film or a perfluoro (ethylene-propylene) copolymer resin turning film which has the same breadth size and low dielectric constant and contains silicon dioxide ceramic powder and has the volume fraction of 20.0-65.0 percent, a polytetrafluoroethylene-containing glass fiber cloth impregnated sheet with the volume fraction of 9.0-70.0 percent, and a polytetrafluoroethylene resin turning film or a perfluoro (ethylene-propylene) copolymer resin turning film with the volume fraction of 10.0-56.5 percent according to an up-down symmetrical structure to form a plurality of dielectric layers.

And step two, respectively covering a piece of low-profile-factor copper foil with the same breadth dimension on the upper surface and the lower surface of the laminated multi-layer dielectric layer, wherein the side with the larger profile factor of the copper foil faces the dielectric layer.

And step three, adopting a hot-pressing sintering process with the temperature of 360-390 ℃, the pressure of 3-13MPa and the hot-pressing time of 2-5h to melt, bond and finally shape the polytetrafluoroethylene resin turning film or the perfluoro (ethylene-propylene) copolymer resin turning film, and preparing the composite dielectric plate with the dielectric constant of 2.14-2.74.

The mass fraction of the silicon dioxide ceramic powder in the polytetrafluoroethylene resin turning film or perfluoro (ethylene-propylene) copolymer resin turning film is 8-55%, and the average grain diameter is 100nm-30 mu m.

The glass fiber cloth impregnated sheet adopts electronic-grade glass fiber cloth.

The mass fraction of the polytetrafluoroethylene in the glass fiber cloth impregnated sheet is 40-75%.

The nominal thickness of the low-profile-factor copper foil is 18 mu m or 35 mu m, and the profile factor of the side with larger profile factor is less than or equal to 8 mu m.

The beneficial effects produced by the invention are as follows: the invention can adopt widely-sold raw materials, and prepares a novel composite dielectric plate with low dielectric constant (2.14-2.74) under the conditions of high-temperature and high-pressure processes through reasonable design of a composite plate formula and a laminated structure. The dielectric plate has the advantages of low dielectric constant, low dielectric loss, low thermal expansion coefficient, acid-base corrosion resistance, cold and hot shock resistance and other extreme environmental conditions, and can be widely applied to the related fields of communication and the like.

Detailed Description

The invention is further illustrated by the following examples:

the low-dielectric-constant polytetrafluoroethylene resin turning film and perfluoro (ethylene-propylene) copolymer resin turning film containing silicon dioxide ceramic powder adopted by the process can have average thicknesses of 50 mu m and 100 mu m without limitation.

The glass fiber cloth in the polytetrafluoroethylene-containing glass fiber cloth impregnated sheet adopted by the process is electronic grade glass fiber cloth, and the types of the glass fiber cloth can be 1037, 104, 106 and 1080, but are not limited.

The polytetrafluoroethylene resin turning film and perfluoro (ethylene-propylene) copolymer resin turning film adopted by the process can have average thicknesses of 25 μm, 50 μm and 100 μm without limitation.