阅读说明：本技术 基于金属-介质-金属的增强吸收的结构、装置及系统 (Metal-medium-metal based enhanced absorption structures, devices and systems ) 是由 景志敏 李颖 张中月 白瑜 李琪 张梓彦 于 2019-12-06 设计创作，主要内容包括：本发明涉及一种基于金属-介质-金属的增强吸收的结构、装置及系统,具体而言,涉及光学结构领域。本申请的增强吸收的结构通过将嵌套部设置在金属基底上,并且该第一金属柱、介质层和第二金属柱之间形成了金属-介质-金属结构,金属-介质-金属结构在垂直于该嵌套部的方向上形成了复合式柱体结构,当光照射在该结构上时,该结构的嵌套部上形成了表面等离激元,使得该嵌套部的第一金属和第二金属表面的区域的自由电子和光子相互作用形成了的电磁振荡,使得光与该结构的耦合情况加强,进而使得照射到该结构上的光更易通过嵌套部传输到金属基底,从而提高该结构对光的吸收率。(The invention relates to a structure, a device and a system for enhancing absorption based on metal-medium-metal, in particular to the field of optical structures. The nested part is arranged on the metal substrate, the metal-medium-metal structure is formed among the first metal column, the dielectric layer and the second metal column, the composite cylinder structure is formed on the metal-medium-metal structure in the direction perpendicular to the nested part, when light irradiates on the structure, surface plasmons are formed on the nested part of the structure, electromagnetic oscillation is formed by interaction of free electrons and photons in the area of the surfaces of the first metal and the second metal of the nested part, the coupling condition of the light and the structure is enhanced, the light irradiating on the structure is enabled to be easier to be transmitted to the metal substrate through the nested part, and therefore the light absorption rate of the structure to the light is improved.)

1. A metal-media-metal based enhanced absorption structure, comprising: the metal substrate and the nesting part are arranged on the metal substrate;

the nested part comprises a first metal column, a dielectric layer and a second metal column, the first metal column is of a solid structure, the dielectric layer and the second metal column are both of a hollow structure, the dielectric layer is nested outside the first metal column, and the second metal column is nested outside the dielectric layer.

2. The metal-media-metal based enhanced absorption structure according to claim 1 wherein the structure comprises a graphene film overlying an end of the metal base distal from the nest.

3. The metal-media-metal based absorption enhancing structure of claim 1 wherein the material of the metal substrate is gold.

4. The metal-dielectric-metal based enhanced absorption structure of claim 3 wherein the material of the first metal pillar and the second metal pillar is gold.

5. The metal-dielectric-metal based enhanced absorption structure of claim 4 wherein the material of the dielectric layer is silicon dioxide.

6. The metal-dielectric-metal based absorption-enhancing structure of claim 5 wherein the metal substrate is in the shape of a cube having a side length of 400 nanometers and a height of 50 nanometers.

7. The metal-dielectric-metal based enhanced absorption structure according to claim 1 wherein the first metal pillar, the dielectric layer and the second metal pillar are each cuboid in shape.

8. The metal-dielectric-metal based enhanced absorption structure of claim 7 wherein the height of the cuboid is 500 nanometers, the side length of the first metal pillar is 100 nanometers, the side length of the dielectric layer is 150 nanometers, and the side length of the second metal pillar is 200 nanometers.

9. A metal-media-metal based enhanced absorption device comprising a plurality of structures according to any of claims 1-8, the plurality of structures being fixedly connected by a metal substrate.

10. A metal-media-metal based system for enhanced absorption, the system comprising: light intensity detection means and the means for enhancing absorption of claim 9, said light intensity detection means being connected to said means for enhancing absorption for detecting the rate of absorption of light by said means for enhancing absorption.

Technical Field

The invention relates to the field of optical structures, in particular to a structure, a device and a system for enhancing absorption based on metal-medium-metal.

Background

The absorption rate refers to the ratio of the thermal radiation energy projected onto an object to be absorbed to the total thermal radiation energy projected onto the object, and is called the absorption rate of the object.

The traditional method for improving the absorptivity of the optical device is to coat a film on the surface of the optical device, and when light irradiates the surface of the optical device, the optical film and the optical device absorb the light, so that the absorption condition of the optical device on the light is increased.

However, generally, the film is coated on the optical device, which has high cost and difficulty and limits the improvement of the absorptivity of the optical device.

Disclosure of Invention

The present invention aims to provide a structure, a device and a system for enhancing absorption based on metal-medium-metal, so as to solve the problems of high cost, high difficulty and limited improvement of the absorption rate of the optical device in the prior art when the optical device is coated with a film. To a problem of (a).

In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:

in a first aspect, an embodiment of the present invention provides a metal-dielectric-metal based structure for enhancing absorption, the structure including: the metal substrate and the nesting part are arranged on the metal substrate;

the nested part comprises a first metal column, a dielectric layer and a second metal column, the first metal column is of a solid structure, the dielectric layer and the second metal column are both of a hollow structure, the dielectric layer is nested outside the first metal column, and the second metal column is nested outside the dielectric layer.

Optionally, the structure comprises a graphene film, and the graphene film covers one end of the metal substrate far away from the nesting part.

Optionally, the material of the metal substrate is gold.

Optionally, the material of the first metal pillar and the second metal pillar is gold.

Optionally, the dielectric layer is made of silicon dioxide.

Optionally, the metal substrate is in the shape of a cube, and the side length of the cube is 400 nm and the height is 50 nm.

Optionally, the first metal pillar, the dielectric layer, and the second metal pillar are all rectangular parallelepipeds.

Optionally, the height of the cuboid is 500 nanometers, the side length of the first metal pillar is 100 nanometers, the side length of the dielectric layer is 150 nanometers, and the side length of the second metal pillar is 200 nanometers.

In a second aspect, embodiments of the present application provide another metal-dielectric-metal based device for enhancing absorption, the device comprising a plurality of structures of any one of the first aspect, the plurality of structures being fixedly connected by a metal substrate.

In a third aspect, embodiments of the present application provide another system for enhancing absorption based on metal-dielectric-metal, the system including: light intensity detection means and the means for enhancing absorption of claim 9, the light intensity detection means being connected to the means for enhancing absorption for detecting the absorption rate of light by the means for enhancing absorption.

The invention has the beneficial effects that:

the structure for enhancing absorption is characterized in that the nesting part is arranged on the metal substrate and comprises a first metal column, a dielectric layer and a second metal column, the first metal column is of a solid structure, the dielectric layer and the second metal column are both of hollow structures, the dielectric layer is nested outside the first metal column, the second metal column is nested outside the dielectric layer, so that a metal-dielectric-metal structure is formed among the first metal column, the dielectric layer and the second metal column, the metal-dielectric-metal structure forms a composite cylinder structure in a direction perpendicular to the nesting part, when light irradiates on the structure, a surface plasmon is formed on the nesting part of the structure, so that electromagnetic oscillation formed by interaction of free electrons and photons in the area of the surfaces of the first metal and the second metal of the nesting part is enhanced, and the coupling condition of the light and the structure is enhanced, and further, light irradiated on the structure is more easily transmitted to the metal base through the nested part, so that the light absorption rate of the structure is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

Fig. 1 is a schematic structural diagram of a metal-dielectric-metal-based absorption enhancement structure according to an embodiment of the present invention;

FIG. 2 is a graph illustrating the absorption effect of a metal-dielectric-metal based absorption enhancement structure according to an embodiment of the present invention;

FIG. 3 is a graph illustrating the absorption effect of another absorption enhancing structure based on metal-dielectric-metal in accordance with an embodiment of the present invention;

FIG. 4 is a schematic structural diagram of another absorption enhancing metal-dielectric-metal based structure according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of a device for enhancing absorption based on metal-dielectric-metal in accordance with an embodiment of the present invention;

fig. 6 is a schematic structural diagram of another device based on metal-dielectric-metal enhanced absorption according to an embodiment of the present invention.

Icon: 10-a metal substrate; 20-a nest; 21-a first metal pillar; 22-a dielectric layer; 23-a second metal pillar; 30-graphene thin film.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.

Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Fig. 1 is a schematic structural diagram of a structure for enhancing absorption based on metal-dielectric-metal according to an embodiment of the present invention, and as shown in fig. 1, an embodiment of the present invention provides a structure for enhancing absorption based on metal-dielectric-metal, the structure including: the metal substrate 10 and the nesting part 20, the nesting part 20 is arranged on the metal substrate 10; the nested part 20 comprises a first metal column 21, a dielectric layer 22 and a second metal column 23, wherein the first metal column 21 is of a solid structure, the dielectric layer 22 and the second metal column 23 are both of a hollow structure, the dielectric layer 22 is nested outside the first metal column 21, and the second metal column 23 is nested outside the dielectric layer 22.

The structure is that the first metal column 21, the dielectric layer 22 and the second metal column 23 are sequentially nested together to form a nesting part 20, generally, the first metal pillar 21, the dielectric layer 22 and the second metal pillar 23 may be cylindrical or rectangular, and for clarity, the first metal pillar 21, the dielectric layer 22 and the second metal pillar 23 are illustrated as rectangular parallelepiped, the dielectric layer 22 is a hollow structure, and the side length of the hollow structure inside the dielectric layer 22 is slightly larger than the outer side length of the first metal pillar 21, the second metal pillar 23 is also a hollow structure, and the side length of the hollow structure inside the second metal pillar 23 is slightly larger than the outside side length of the dielectric layer 22, when the first metal pillar 21, the dielectric layer 22 and the second metal pillar 23 are nested, a certain gap may exist, or an interference fit may also exist, which is not limited herein.

Fig. 2 is a graph of the absorption effect of a structure based on metal-dielectric-metal enhanced absorption according to an embodiment of the present invention, as shown in fig. 2, where the ordinate in fig. 2 represents the light absorption rate of the structure, the abscissa represents the wavelength, and the refractive index of the surrounding environment in fig. 2 is not changed, as can be seen from fig. 2, the light absorption rate of the structure is about 94.2% for 1280 nm, fig. 3 is a graph of the absorption effect of another structure based on metal-dielectric-metal enhanced absorption according to an embodiment of the present invention, as shown in fig. 3, the device is placed in an environment with a changed refractive index of the surrounding environment, where the ordinate in fig. 3 represents the light absorption rate of the structure, the abscissa represents the wavelength, and a broken line formed by square points represents the light absorption of the structure when the refractive index of the surrounding environment is 1, when the broken line formed by the circular points represents that the refractive index of the surrounding environment is 1.1, the structure absorbs light, when the broken line formed by the points of the upright triangle represents that the refractive index of the surrounding environment is 1.2, the structure absorbs light, and when the broken line formed by the points of the inverted triangle represents that the refractive index of the surrounding environment is 1.3, the structure absorbs light, by analyzing the graph in fig. 3, the absorption rate of the structure to light with the wavelength of 1280 nanometers is all about 94.2 when the refractive index of the surrounding environment changes, when the absorption rate of the structure to light is detected, the structure can be placed in the environment with the wavelength of 1280 nanometers to eliminate the influence of the change of the refractive index of the external environment on the absorption rate of the structure to light.

Fig. 4 is a schematic structural diagram of another metal-dielectric-metal based absorption enhancement structure according to an embodiment of the present invention, as shown in fig. 4, optionally, the structure includes a graphene film 30, and the graphene film 30 covers an end of the metal substrate 10 away from the nest 20.

The end of the nesting part 20 away from the metal substrate 10 in the structure is provided with a graphene film 30, the thickness and volume of the graphene film 30 are set according to actual needs, and are not specifically limited herein, the material of the graphene film 30 is generally graphene, and may be a layer of graphene, or may be a multilayer graphene, one side of the graphene film 30 close to the metal substrate 10 may be set to be a rough surface, so that the thickness of the graphene film 30 is not uniform, when light is transmitted through the graphene film 30, the light absorption rate of the structure is increased, the graphene film 30 may also be a structure with a thicker periphery and a thinner middle, the area of the thinner middle structure is the same as the area of the nesting part 20, and is used for nesting the thinner middle area onto the nesting part 20, so that the graphene film 30 is linked with the nesting part 20 in a shape complementary manner, thereby increasing the light absorption rate of the structure; in addition, since the graphene film 30 is disposed at one end of the nested portion 20, and the metal substrate 10 is disposed at the other end, a fabry-perot cavity is formed in the structure in a direction perpendicular to the nested portion 20, so that the excited surface plasmons form a standing wave after being reflected by a plurality of light sources, and the absorption rate of light is increased.

Optionally, the material of the metal substrate 10 is gold.

Optionally, the material of the first metal pillar 21 and the second metal pillar 23 is gold.

Optionally, the material of the dielectric layer 22 is silicon dioxide.

The gold has good conductivity and good photoelectric characteristics, so that the material of the metal substrate 10 can be gold; the first metal pillar 21 and the second metal pillar 23 need to be coupled with light irradiated into the structure, and the first metal pillar 21 and the second metal pillar 23 may be set to be gold materials, and the dielectric layer 22 is made of silicon dioxide, so that current is generated and flows among the first metal pillar 21, the dielectric layer 22 and the second metal pillar 23, thereby increasing the light absorption rate of the structure.

Alternatively, the metal substrate 10 is in the shape of a cube, and the side length of the cube is 400 nm and the height is 50 nm.

When the metal substrate 10 is a cube, the side length of the cube is 400 nm and the height is 50 nm, in practical applications, the metal substrate 10 may have a plurality of different regulations, the structures with the same regulation have the same size, and the specific regulations are set according to practical situations, which is not limited herein.

Optionally, the first metal pillar 21, the dielectric layer 22, and the second metal pillar 23 are all rectangular parallelepipeds.

Optionally, the height of the rectangular parallelepiped is 500 nm, the side length of the first metal pillar 21 is 100 nm, the side length of the dielectric layer 22 is 150 nm, and the side length of the second metal pillar 23 is 200 nm.

When the first metal column 21, the dielectric layer 22 and the second metal column 23 are all rectangular solids, the side length of the rectangular solids is 400 nanometers, and the height of the rectangular solids is 50 nanometers.

The structure for enhancing absorption of the present application is characterized in that the nesting part 20 is disposed on the metal substrate 10, the nesting part 20 includes a first metal pillar 21, a dielectric layer 22 and a second metal pillar 23, the first metal pillar 21 is a solid structure, the dielectric layer 22 and the second metal pillar 23 are both hollow structures, the dielectric layer 22 is nested outside the first metal pillar 21, the second metal pillar 23 is nested outside the dielectric layer 22, so that a metal-dielectric-metal structure is formed among the first metal pillar 21, the dielectric layer 22 and the second metal pillar 23, the metal-dielectric-metal structure forms a composite pillar structure in a direction perpendicular to the nesting part 20, when light is irradiated on the structure, a surface plasmon is formed on the nesting part 20 of the structure, so that free electrons and photons in the region of the surfaces of the first metal and the second metal of the nesting part 20 interact to form an electromagnetic oscillation, the coupling condition of light and the structure is enhanced, and the light irradiated on the structure is more easily transmitted to the metal base 10 through the nesting part 20, so that the light absorption rate of the structure is improved.

Fig. 5 is a schematic structural diagram of a device for enhancing absorption based on metal-dielectric-metal according to an embodiment of the present invention, and as shown in fig. 5, an embodiment of the present invention provides another device for enhancing absorption based on metal-dielectric-metal, where the device includes a plurality of structures of any one of the above, and the plurality of structures are fixedly connected through a metal substrate 10.

The structures are periodically arranged to form a device for enhancing absorption, and the specifications of the structures in the device are the same.

Fig. 6 is a schematic structural diagram of another device based on metal-dielectric-metal enhanced absorption according to an embodiment of the present invention, as shown in fig. 6, optionally, an end of the nest 20 away from the metal substrate 10 is covered with a graphene film 30, and the graphene film 30 is an integral body.

Optionally, since the absorption rate of the structure in the present application to light does not change with the change of the refractive index of the external environment, the embodiment of the present application provides another temperature sensor, including the above device based on metal-medium-metal enhanced absorption, which does not change with the change of the refractive index due to the absorption of light near 1280 nm, so that the change of the temperature can be known through the measurement of the resonance characteristic of the structure. The temperature sensor eliminates the change caused by the refractive index, and the result is more accurate and reliable.

Another system for enhancing absorption based on metal-medium-metal is provided in an embodiment of the present application, and includes: the light intensity detection device is connected with the absorption enhancing device and is used for detecting the light absorption rate of the absorption enhancing device.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.