Process chamber and semiconductor processing equipment
阅读说明:本技术 工艺腔室和半导体处理设备 (Process chamber and semiconductor processing equipment ) 是由 张璐 于 2018-06-29 设计创作,主要内容包括:本发明公开了一种工艺腔室和半导体处理设备。包括:腔室本体;基座,位于所述腔室本体内;盖板,盖设在所述腔室本体上,且与所述腔室本体之间绝缘间隔;下电极射频电源,与所述基座和所述盖板选择性地电连接;并且,启辉阶段,所述盖板为悬浮状态,所述下电极射频电源与所述盖板电性导通,以通过容性耦合的方式使得等离子体发生启辉;启辉结束,所述下电极射频电源与所述基座电性导通,以形成射频自偏压。盖板在启辉阶段为悬浮状态,并且,在启辉阶段,下电极射频电源与盖板电性导通,从而可以通过容性耦合的方式实现等离子体启辉,进而可以降低启辉阶段的晶圆损伤,且同时还能够有效降低腔室颗粒污染,提高晶圆的加工良率,降低制作成本。(The invention discloses a process chamber and semiconductor processing equipment. The method comprises the following steps: a chamber body; a pedestal located within the chamber body; the cover plate is covered on the cavity body and is insulated and spaced from the cavity body; a lower electrode radio frequency power supply selectively electrically connected to the base and the lid; in the glow starting stage, the cover plate is in a suspension state, the lower electrode radio frequency power supply is electrically conducted with the cover plate, and plasma is started in a capacitive coupling mode; and after the starting is finished, the lower electrode radio frequency power supply is electrically conducted with the base to form radio frequency self-bias voltage. The cover plate is in a suspension state in the glow starting stage, and the lower electrode radio frequency power supply is electrically conducted with the cover plate in the glow starting stage, so that plasma glow starting can be realized in a capacitive coupling mode, wafer damage in the glow starting stage can be reduced, particle pollution of a cavity can be effectively reduced, the processing yield of wafers is improved, and the manufacturing cost is reduced.)
1. A process chamber, comprising:
a chamber body;
a pedestal located within the chamber body;
the cover plate is covered on the cavity body and is insulated and spaced from the cavity body;
a lower electrode radio frequency power supply selectively electrically connected to the base and the lid; and the number of the first and second electrodes,
in the glow starting stage, the cover plate is in a suspension state, the lower electrode radio frequency power supply is electrically conducted with the cover plate, and plasma is started in a capacitive coupling mode;
and after the starting is finished, the lower electrode radio frequency power supply is electrically conducted with the base to form radio frequency self-bias voltage.
2. The process chamber of claim 1, further comprising a first selective coupling;
the lower electrode RF power source is selectively electrically connected to the base and the lid via the first selective connection.
3. The process chamber of claim 2, wherein the first selection connection comprises a selection switch;
the fixed contact of the selection switch is electrically connected with the lower electrode radio frequency power supply, and the moving contact of the selection switch is selectively and electrically connected with the base and the cover plate.
4. The process chamber of claim 3, further comprising:
the first matcher is arranged between the base and the selector switch in series;
and the second matcher is serially arranged between the cover plate and the selector switch.
5. The process chamber of any of claims 1 to 4, further comprising a first insulator;
the first insulating member is sandwiched between the chamber body and the cover plate so that the cover plate and the chamber body are insulated from each other.
6. The process chamber of any of claims 1 to 4, further comprising a second selective coupling;
the cover plate is selectively electrically connected with a grounding terminal through the second selective connecting piece; and the number of the first and second electrodes,
in the glow starting stage, the cover plate is not conducted with the grounding end through the second selective connecting piece, so that the cover plate is in a suspension state;
and after the glow starting is finished, the second selective connecting piece enables the cover plate to be electrically conducted with the grounding end.
7. The process chamber of any of claims 1 to 4, wherein the cover plate is a metallic material;
one surface of the cover plate facing the chamber body is subjected to rough treatment; or one surface of the cover plate facing the chamber body is provided with an insulating material layer, and the insulating material layer is subjected to rough treatment.
8. The process chamber of claim 7, wherein the material of the cover plate or the insulating material of the surface of the cover plate is the same as a metal or oxide material to which the process requires attachment.
9. The process chamber of any of claims 1 to 4, further comprising:
a dielectric window coupled with the chamber body;
the radio frequency coil is placed on the dielectric window and is electrically connected with the upper electrode radio frequency power supply through a third matcher;
and the Faraday shielding piece is positioned in the chamber body and is arranged corresponding to the medium window, and the Faraday shielding piece is directly grounded through the chamber body.
10. A semiconductor processing apparatus comprising the process chamber of any of claims 1-9.
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a process chamber and semiconductor processing equipment.
Background
Plasma equipment is widely used in the manufacturing process of semiconductors, solar cells, flat panel displays and the like. In current manufacturing processes, plasma equipment types have been used including capacitively coupled plasma types, inductively coupled plasma types, and electron cyclotron resonance plasma types. These types of discharges are currently widely used in the fields of physical vapor deposition, plasma etching, and plasma chemical vapor deposition.
Inductively coupled plasma refers to a discharge mode in which a radio frequency current is applied to a radio frequency coil, an electromagnetic field that changes with time is induced around the radio frequency coil, and plasma is generated and maintained in a discharge space. Because the mode can stably generate plasma with higher density, the application is very wide.
However, the rf current on the rf coil causes capacitive coupling to occur between the coil and the plasma in addition to inductive coupling. Such capacitive coupling causes problems of reduced coil life, reduced energy coupling efficiency, etc.
Disclosure of Invention
The invention aims to solve at least one technical problem in the prior art, and provides a process chamber and semiconductor processing equipment.
To achieve the above object, according to a first aspect of the present invention, there is provided a process chamber comprising:
a chamber body;
a pedestal located within the chamber body;
the cover plate is covered on the cavity body and is insulated and spaced from the cavity body;
a lower electrode radio frequency power supply selectively electrically connected to the base and the lid; and the number of the first and second electrodes,
in the glow starting stage, the cover plate is in a suspension state, the lower electrode radio frequency power supply is electrically conducted with the cover plate, and plasma is started in a capacitive coupling mode;
and after the starting is finished, the lower electrode radio frequency power supply is electrically conducted with the base to form radio frequency self-bias voltage.
Optionally, the process chamber further comprises a first option connector;
the lower electrode RF power source is selectively electrically connected to the base and the lid via the first selective connection.
Optionally, the first selective connection comprises a selection switch;
the fixed contact of the selection switch is electrically connected with the lower electrode radio frequency power supply, and the moving contact of the selection switch is selectively and electrically connected with the base and the cover plate.
Optionally, the process chamber further comprises:
the first matcher is arranged between the base and the selector switch in series;
and the second matcher is serially arranged between the cover plate and the selector switch.
Optionally, the process chamber further comprises a first insulator;
the first insulating member is sandwiched between the chamber body and the cover plate so that the cover plate and the chamber body are insulated from each other.
Optionally, the process chamber further comprises a second option connector;
the cover plate is selectively electrically connected with a grounding terminal through the second selective connecting piece; and the number of the first and second electrodes,
in the glow starting stage, the cover plate is not conducted with the grounding end through the second selective connecting piece, so that the cover plate is in a suspension state;
and after the glow starting is finished, the second selective connecting piece enables the cover plate to be electrically conducted with the grounding end.
Optionally, the cover plate is made of a metal material;
one surface of the cover plate facing the chamber body is subjected to rough treatment; or one surface of the cover plate facing the chamber body is provided with an insulating material layer, and the insulating material layer is subjected to rough treatment.
Optionally, the material of the cover plate or the insulating material of the surface of the cover plate is the same as the metal or oxide material to which the process needs to be attached.
Optionally, the process chamber further comprises:
a dielectric window coupled with the chamber body;
the radio frequency coil is placed on the dielectric window and is electrically connected with the upper electrode radio frequency power supply through a third matcher;
and the Faraday shielding piece is positioned in the chamber body and is arranged corresponding to the medium window, and the Faraday shielding piece is directly grounded through the chamber body.
In a second aspect of the invention, a semiconductor processing apparatus is provided, comprising the process chamber described above.
The invention relates to a process chamber and semiconductor processing equipment. The cover plate is in a suspension state in the glow starting stage, and the lower electrode radio frequency power supply is electrically conducted with the cover plate in the glow starting stage, so that plasma glow starting can be realized in a capacitive coupling mode, namely non-lower electrode glow starting of a process chamber can be realized, wafer damage in the glow starting stage can be reduced, particle pollution of the chamber can be effectively reduced, the processing yield of the wafer is improved, and the manufacturing cost is reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of a process chamber according to a first embodiment of the present invention;
fig. 2 is a schematic structural view of a faraday shield in a second embodiment of the present invention.
Description of the reference numerals
100: a process chamber;
110: a chamber body;
120: a base;
130: a cover plate;
141: a lower electrode radio frequency power supply;
142: an upper electrode radio frequency power supply;
150: a first selection link;
161: a first matcher;
162: a second matcher;
163: a third matcher;
171: a first insulating member;
172: a second insulating member;
181: a dielectric window;
182: a radio frequency coil;
190: a Faraday shield;
191: an annular body;
192: a gap.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
As shown in FIG. 1, a first aspect of the present invention is directed to a
Specifically, as shown in fig. 1, in the glow starting stage, the
After the plasma is ignited, i.e., the ignition stage is finished, the lower electrode
In the
As shown in fig. 1, the
Specifically, as shown in fig. 1, the first
It should be noted that, the specific structure of the selection switch may be, for example, a relay, or may also be a radio frequency switch, etc.
The
As shown in fig. 1, the
In the
As shown in fig. 1, the
Specific materials of the first insulating
Optionally, the
Specifically, in the glow starting phase, the second selective connection element is disconnected, so that the
Optionally, a surface of the
In addition, an insulating material layer may be disposed on one surface of the
Preferably, the material of the
As shown in fig. 1, the
Specifically, the rf current flowing through the
However, on the premise that no other plasma source exists, high voltage is required to generate plasma, so that high power is required to start the plasma, even the plasma cannot be started, or a bottom electrode starting mode is adopted, but the bias voltage of the bottom electrode starting mode is high, and the wafer is damaged.
Therefore, in the
As shown in fig. 1 and 2, the
In a second aspect of the present invention, a semiconductor processing apparatus (not shown) is provided, including the
The semiconductor processing apparatus of this embodiment has the above-mentioned
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.