阅读说明：本技术 线圈激励式压力传感器 (Coil-excited pressure sensor ) 是由 A·莱瑟姆 M·C·杜格 C·费尔蒙 X·杜阿梅尔德米利 M·帕内捷-勒克尔 于 2018-04-20 设计创作，主要内容包括：压力传感器包括：腔室,所述腔室包括传导性部分和联接到传导性部分的可变形部分,并且可变形部分易于响应于腔室的内部与腔室的外部之间的压力差而变形；响应于AC线圈驱动信号的至少一个线圈；至少一个磁场感测元件,其邻近所述至少一个线圈且邻近所述腔室的传导性部分设置,并配置成响应于由所述至少一个线圈生成并被所述传导性部分反射的反射磁场生成磁场信号；以及电路,电路联接到所述至少一个磁场感测元件,以响应于所述磁场信号生成压力传感器的输出信号,输出信号指示腔室的内部与腔室的外部之间的压力差。(The pressure sensor includes: a chamber comprising a conductive portion and a deformable portion coupled to the conductive portion and susceptible to deformation in response to a pressure differential between an interior of the chamber and an exterior of the chamber; at least one coil responsive to an AC coil drive signal; at least one magnetic field sensing element disposed adjacent to the at least one coil and adjacent to the conductive portion of the chamber and configured to generate a magnetic field signal in response to a reflected magnetic field generated by the at least one coil and reflected by the conductive portion; and circuitry coupled to the at least one magnetic field sensing element to generate an output signal of the pressure sensor in response to the magnetic field signal, the output signal being indicative of a pressure difference between an interior of the chamber and an exterior of the chamber.)

1. A pressure sensor, comprising:

a chamber comprising a conductive portion and a deformable portion coupled to the conductive portion and susceptible to deformation in response to a pressure differential between an interior of the chamber and an exterior of the chamber;

at least one coil responsive to an AC coil drive signal;

at least one magnetic field sensing element disposed adjacent to the at least one coil and adjacent to the conductive portion of the chamber, and configured to generate a magnetic field signal in response to a reflected magnetic field generated by the at least one coil and reflected by the conductive portion; and

a circuit coupled to the at least one magnetic field sensing element to generate an output signal of a pressure sensor in response to the magnetic field signal, the output signal being indicative of a pressure difference between an interior of the chamber and an exterior of the chamber.

2. The pressure sensor of claim 1, wherein the chamber comprises an elongated tube.

3. The pressure sensor of claim 2, wherein the conductive portion and the deformable portion comprise a membrane disposed at the first end of the tube adjacent the at least one magnetic field sensing element.

4. The pressure sensor of claim 3, wherein the membrane comprises one or more of stainless steel, beryllium copper, titanium alloys, and sapphire.

5. The magnetic field sensor of claim 1, wherein the at least one magnetic field sensing element comprises at least two spaced apart magnetic field sensing elements, wherein the circuitry is configured to detect a difference between a first distance between the conductive portion and a first one of the magnetic field sensing elements and a second distance between the conductive portion and a second one of the magnetic field sensing elements, thereby generating an output signal of the pressure sensor.

6. The pressure sensor of claim 5, wherein the first one of the magnetic field sensing elements is substantially aligned with an edge of the membrane and the second one of the magnetic field sensing elements is substantially aligned with a central region of the membrane.

7. The pressure sensor of claim 5, wherein the at least one magnetic field sensing element comprises a first magnetic field sensing element supported by a first substrate and a second magnetic field sensing element supported by a second substrate.

8. The pressure sensor of claim 2, wherein the deformable portion comprises a sidewall portion of the elongate tube configured to elongate in response to the pressure differential.

9. The pressure sensor of claim 7, wherein the conductive portion comprises an end of the elongate tube adjacent the at least one magnetic field sensing element.

10. The pressure sensor of claim 7, wherein the elongate tube comprises a first elongate tube, and the pressure sensor further comprises a second elongate tube, the first elongate tube being disposed in the second elongate tube.

11. The pressure sensor of claim 1, further comprising a substrate, wherein the substrate comprises a first substrate, and the pressure sensor further comprises:

a second substrate having a first surface and a second opposing surface, a recess being formed in the first surface; and

a conductive material disposed in the recess of the second substrate, wherein the first substrate and the second substrate are attached with the first surface of the second substrate adjacent the first substrate such that the chamber includes the recess of the second substrate and the conductive portion includes the conductive material.

12. The pressure sensor of claim 10, wherein the chamber is maintained at a predetermined reference pressure.

13. The pressure sensor of claim 10, wherein the recess is an etched recess.

14. The pressure sensor of claim 10, wherein the conductive material comprises copper or aluminum.

15. The pressure sensor of claim 1, wherein the at least one magnetic field sensing element comprises one or more of a Hall effect element, a giant Magnetoresistance (MR) element, an Anisotropic Magnetoresistance (AMR) element, a Tunneling Magnetoresistance (TMR) element, or a Magnetic Tunneling Junction (MTJ).

16. The pressure sensor of claim 1, wherein the at least one magnetic field sensing element and/or the coil is supported by a substrate.

17. The pressure sensor of claim 14, wherein the substrate comprises a first substrate and the pressure sensor comprises a second substrate, and wherein the at least one magnetic field sensing element is supported by the second substrate.

18. The pressure sensor of claim 1, wherein the chamber is divided into smaller portions, each of which experiences a potentially different pressure to map the pressure.

19. A pressure sensor, comprising:

a chamber comprising a conductive portion and a deformable portion coupled to the conductive portion and susceptible to deformation in response to a pressure differential between an interior of the chamber and an exterior of the chamber;

means for generating a reflected magnetic field from the chamber;

means for generating a magnetic field signal in response to the reflected magnetic field; and

means for generating an output signal of a pressure sensor in response to the magnetic field signal, the output signal being indicative of a pressure difference between an interior of the chamber and an exterior of the chamber.

Disclosure of Invention

In an embodiment, the pressure sensor comprises: a chamber comprising a conductive portion and a deformable portion coupled to the conductive portion and susceptible to deformation in response to a pressure differential between an interior of the chamber and an exterior of the chamber; at least one coil responsive to an AC coil drive signal; at least one magnetic field sensing element disposed adjacent to the at least one coil and adjacent to the conductive portion of the chamber, and configured to generate a magnetic field signal in response to a reflected magnetic field generated by the at least one coil and reflected by the conductive portion; and circuitry coupled to the at least one magnetic field sensing element to generate an output signal of a pressure sensor in response to the magnetic field signal, the output signal being indicative of a pressure difference between an interior of the chamber and an exterior of the chamber.

One or more of the following features may be included.

The chamber may comprise an elongate tube.

The conductive portion and deformable portion may comprise a membrane disposed at the first end of the tube adjacent the at least one magnetic field sensing element.

The membrane may comprise one or more of stainless steel, beryllium copper, titanium alloy, and sapphire.

The at least one magnetic field sensing element may comprise at least two spaced apart magnetic field sensing elements, wherein the circuitry is configured to detect a difference between a first distance between the conductive portion and a first one of the magnetic field sensing elements and a second distance between the conductive portion and a second one of the magnetic field sensing elements, thereby generating an output signal of the pressure sensor.

The first one of the magnetic field sensing elements may be substantially aligned with an edge of the membrane and the second one of the magnetic field sensing elements is substantially aligned with a central region of the membrane.

The at least one magnetic field sensing element may include a first magnetic field sensing element supported by the first substrate and a second magnetic field sensing element supported by the second substrate.

The deformable portion may comprise a sidewall portion of the elongate tube configured to elongate in response to the pressure differential.

The conductive portion may comprise an end of the elongate tube adjacent the at least one magnetic field sensing element.

The elongate tube may comprise a first elongate tube, and the pressure sensor further comprises a second elongate tube, the first elongate tube being disposed in the second elongate tube.

A substrate may be included, wherein the substrate comprises a first substrate, and the pressure sensor further comprises a second substrate having a first surface and a second opposing surface, a recess being formed in the first surface. A conductive material may be disposed in the recess of the second substrate, wherein the first and second substrates are attached with the first surface of the second substrate adjacent the first substrate such that the chamber includes the recess of the second substrate and the conductive portion includes the conductive material.

The chamber may be maintained at a predetermined reference pressure.

The recess may be an etched recess.

The conductive material may include copper or aluminum.

The at least one magnetic field sensing element may comprise one or more of a Hall effect element, a giant Magnetoresistance (MR) element, an Anisotropic Magnetoresistance (AMR) element, a Tunneling Magnetoresistance (TMR) element, or a Magnetic Tunnel Junction (MTJ).

The at least one magnetic field sensing element and/or the coil may be supported by a substrate.

The substrate may comprise a first substrate and the pressure sensor may comprise a second substrate, wherein the at least one magnetic field sensing element is supported by the second substrate.

The chamber may be divided into smaller portions, each of which is subjected to a potentially different pressure to create the map of pressures.

In another embodiment, a pressure sensor includes: a chamber comprising a conductive portion and a deformable portion coupled to the conductive portion and susceptible to deformation in response to a pressure differential between an interior of the chamber and an exterior of the chamber; means for generating a reflected magnetic field from the chamber; means for generating a magnetic field signal in response to the reflected magnetic field; and means for generating an output signal of a pressure sensor in response to the magnetic field signal, the output signal being indicative of a pressure difference between an interior of the chamber and an exterior of the chamber.

Drawings

The above features will be more fully understood from the following description of the drawings. The accompanying drawings are included to provide a further understanding of the disclosed technology. The drawings provided depict one or more examples of embodiments, because it is often impractical, or impossible, to illustrate and describe every possible embodiment. Accordingly, the drawings are not intended to limit the scope of the present invention. Like reference symbols in the various drawings indicate like elements.

FIG. 1 is a block diagram of a system for sensing a target.

Fig. 2 is an isometric view of a system for sensing a target.

Fig. 2A shows a cross-sectional view of the system of fig. 2.

FIG. 3 is a schematic diagram of a coil and a Magnetoresistive (MR) element for sensing a target.

Fig. 3A is a schematic diagram of a coil and MR element (including pads) for sensing a target.

FIG. 3B is a schematic diagram of an embodiment of a coil and MR element for sensing a target.

FIG. 4 is a cross-sectional view of a system for sensing a target.

FIG. 5 is a schematic diagram of a coil and MR element for sensing a target.

FIG. 5A is a schematic diagram of an embodiment of a coil and MR element for sensing a target.

FIG. 5B is a schematic diagram of an embodiment of a coil and MR element (including lead frames) for sensing a target.

FIG. 5C is a schematic diagram of an embodiment of a coil and MR element for sensing a target.

FIG. 6 is a schematic diagram of an embodiment of a coil and MR element for sensing a target.

FIG. 7 is a cross-sectional view of a coil and MR element for sensing a target.

Fig. 8 is an isometric view of a pressure sensor.

Fig. 8A is an isometric view of an embodiment of the pressure sensor of fig. 8.

FIG. 9 is a cross-sectional view of an embodiment of a pressure sensor including a substrate.

FIG. 10 is a block diagram of a circuit for sensing a magnetic target.

FIG. 10A is a block diagram of an embodiment of a circuit for sensing a magnetic target.

FIG. 11 is a block diagram of an embodiment of a circuit for sensing a magnetic target.

FIG. 11A is a block diagram of an embodiment of a circuit for sensing a magnetic target.

FIG. 11B is a block diagram of an embodiment of a circuit for sensing a magnetic target.

FIG. 11C is a block diagram of an embodiment of a circuit for sensing a magnetic target.

FIG. 11D is a block diagram of an embodiment of a circuit for sensing a magnetic target.

FIG. 11E is a block diagram of an embodiment of a circuit for sensing a magnetic target.

FIG. 11F is a block diagram of an embodiment of a circuit for sensing a magnetic target.

FIG. 12 is a diagram illustrating output signals for a system with sensitive detection.

Fig. 12A is a block diagram of a magnetic field detection circuit with sensitivity detection.

FIG. 12B is a block diagram of an embodiment of a magnetic field detection circuit with sensitivity detection.

FIG. 12C is a block diagram of an embodiment of a magnetic field detection circuit with sensitivity detection.

FIG. 13 is a schematic diagram of an embodiment of a magnetic field detection circuit including a coil and an MR element with sensitivity detection.

Fig. 13A is a schematic diagram of an embodiment of a coil having opposing coil portions (counters) with gaps between traces.

FIG. 13B is a block diagram of an embodiment of a magnetic field detection circuit with sensitivity detection.

FIG. 14 is a side view of a magnetic field sensor and a magnetic target with varying thickness of material.

FIG. 14A is a side view of a magnetic field sensor and a magnetic target having a material of varying thickness.

FIG. 14B is a side view of a magnetic field sensor and a magnetic target with a material of varying thickness.

FIG. 15 is a side view of a magnetic field sensor and a magnetic target having multiple thicknesses of material.

FIG. 15A is a side view of a magnetic field sensor and a magnetic target having multiple thicknesses of material.

FIG. 15B is a side view of a magnetic field sensor and a magnetic target having multiple thicknesses of material.

FIG. 15C is a side view of a magnetic field sensor and a magnetic target having multiple thicknesses of material.

FIG. 16 is a side view of a magnetic field sensor and a magnetic target with a bevel.

FIG. 16A is a side view of a magnetic field sensor and a magnetic target with a bevel.

Fig. 17 is a side view of a substrate and lead frame connected by lead wires.

Fig. 17A is a side view of a substrate and leadframe connected by solder joints.

Fig. 18 is a schematic diagram of a dual die package including one or more coils.

Fig. 18A is a schematic diagram of a dual die package including one or more coils.

Fig. 19 is a schematic diagram of a multi-die package including one or more coils.

Detailed Description

As used herein, the term "magnetic field sensing element" is used to describe various electronic elements capable of sensing a magnetic field. The magnetic field sensing element may be, but is not limited to, a Hall effect element, a Magnetoresistive (MR) element, or a magnetotransistor. As is known, there are different types of Hall effect elements, such as planar Hall elements, vertical Hall elements and circular vertical Hall (cvh) elements. As is also known, there are different types of magnetoresistive elements, such as semiconductor magnetoresistive elements (e.g., indium antimonide (InSb)), giant Magnetoresistive (MR) elements, anisotropic magnetoresistive elements (AMR), Tunneling Magnetoresistive (TMR) elements, and Magnetic Tunnel Junctions (MTJ). The magnetic field sensing element may be a single element, or alternatively, the magnetic field sensing element may comprise two or more magnetic field sensing elements arranged in various configurations, such as a half-bridge or a full-bridge (Wheatstone bridge). Depending on the type of device and other application requirements, the magnetic field sensing element may be a device made of a group iv semiconductor material, such as silicon (Si) or germanium (Ge), or a group iii-v semiconductor material, such as gallium arsenide (GaAs) or an indium compound, e.g., indium antimonide (InSb).

As is known, some of the above-mentioned magnetic field sensing elements tend to have axes of maximum sensitivity parallel to the substrate supporting the magnetic field sensing elements, while some of the above-mentioned magnetic field sensing elements tend to have axes of maximum sensitivity perpendicular to the substrate supporting the magnetic field sensing elements. In particular, planar Hall elements tend to have a sensitivity axis perpendicular to the substrate, while metal-based or metal magnetoresistive elements (e.g., MR, TMR, AMR) and vertical Hall elements tend to have a sensitivity axis parallel to the substrate.

As used herein, the term "magnetic field sensor" is used to describe a circuit that uses magnetic field sensing elements, typically in combination with other circuits. Magnetic field sensors are used in a variety of applications, including but not limited to: an angle sensor sensing an angle of a magnetic field direction; a current sensor that senses a magnetic field generated by a current carried by the current carrying conductor; a magnetic switch that senses proximity of a ferromagnetic object; a rotation detector that senses magnetic domains of passing ferromagnetic items, such as a ring magnet or ferromagnetic target (e.g., gear teeth), where a magnetic field sensor is used in combination with a back-biased (back-biased) magnet or other magnet; and a magnetic field sensor that senses a magnetic field density of the magnetic field.

As used herein, the terms "target" and "magnetic target" are used to describe an object to be sensed or detected by means of a magnetic field sensor or magnetic field sensing element. The target may contain a conductive material, such as a conductive metal target, that allows eddy currents to flow within the target.

FIG. 1 is a block diagram of a system 100 for detecting a conductive target 102. In various embodiments, the target 102 may be magnetic or non-magnetic. The system 100 includes one or more Magnetoresistive (MR) elements 104 and includes an MR driver circuit 106. The MR driver circuitry can include a power supply or other circuitry to power the MR element 104. In embodiments, the MR element 104 may be replaced with other types of magnetic field sensing elements, such as Hall effect elements, and the like. The MR element 104 may comprise a single MR element or a plurality of MR elements. In certain embodiments, the MR elements may be arranged in a bridge configuration.

The system 100 may further include one or more coils 108 and include a coil driver circuit 110. The coil 108 may be an electrical coil, winding, wire, trace, or the like configured to generate a magnetic field when an electrical current flows through the coil 108. In an embodiment, the coil 108 includes two or more coils, each being a conductive trace supported by a substrate (e.g., a semiconductor substrate, a glass substrate, a ceramic substrate, etc.). In other embodiments, the coil 108 may not be supported by the substrate. For example, the coil 108 may be supported by a chip package, a frame, a PCB, or any other type of structure capable of supporting coil traces. In other embodiments, the coil 108 may be a free standing wire, i.e., not supported by a separate support structure.

The coil driver 110 is a power supply circuit that supplies current to the coil 108, thereby generating a magnetic field. In an embodiment, the coil driver 110 may generate an alternating current to cause the coil 108 to generate an alternating magnetic field (i.e., a magnetic field with a time-varying magnetic moment). The coil driver 110 may be circuitry that is fully or partially implemented on a semiconductor die.

The system 100 may further include a processor 112 coupled to receive the signal 104a from the MR element 104, the signal 104a being representative of the magnetic field detected by the MR element 104. The processor 100 may receive the signal 104a and utilize the signal to determine the position, velocity, direction, or other property of the target 102.

The MR element 104 and the coil 108 can be positioned on a substrate 114. The substrate 114 may comprise a semiconductor substrate (e.g., a silicon substrate), a chip package, a PCB, or other type of board-level substrate, or the substrate may be any type of platform capable of supporting the MR element 104 and the coil 108. Substrate 114 may include a single substrate or a plurality of substrates as well as a single type of substrate or a plurality of types of substrates.

In operation, the MR driver 106 powers the MR element 104 and the coil driver 110 provides current to the coil 108. In response, the coil 108 generates a magnetic field that is detectable by the MR element 104, which generates a signal 104a representative of the detected magnetic field.

As the target 102 moves relative to the magnetic field, the position of the target and the movement through the field cause the field to change. In response, the signal 104a generated by the MR element 104 changes. The processor 112 receives the signal 104a and processes the change in the signal (and/or the change in the state of the signal) to determine the position, movement, or other characteristic of the target 102. In an embodiment, the system 100 may detect movement or position of the target 102 along the axis 116. In other words, the system 100 can detect the position of the target 102 near the MR element 104 as the target 102 moves toward or away from the MR element 104 and the coil 108. The system 102 may also be capable of detecting other types of positions or movements of the target 102.

Referring now to fig. 2, the system 200 may be the same as or similar to the system 100. The substrate 202 may be the same or similar to the substrate 114, and the substrate 202 may support the coil 204, the coil 206, and the MR element 208. Although one MR element is shown, MR element 208 may include two or more MR elements, depending on the embodiment of system 200. The target 203 would be the same or similar to the target 102.

Although not shown, MR driver circuit 106 can provide current to MR element 208 and coil driver circuit 110 can provide current to coils 204 and 206.

The coils 204 and 206 may be arranged such that current flows through the coils 204 and 206 in opposite directions, as shown by arrow 208 (indicating clockwise current in the coil 204) and arrow 210 (indicating counterclockwise current in the coil 206). Thus, the coil 204 will generate a magnetic field having a magnetic moment along the negative Z-direction (i.e., downward, in fig. 2), as indicated by arrow 212. Similarly, the coil 206 will generate a magnetic field having magnetic moments in the opposite direction (positive Z-direction), as indicated by arrow 214. The total magnetic field 211 generated by the two coils may have a similar shape as shown by the magnetic field lines 211. It will be understood that the coils 204, 206 may be formed from a single coil structure, in a manner that is wound such that the currents through the coils flow in opposite directions, respectively. Alternatively, the coils 204, 206 may be formed from separate coil structures.

In an embodiment, the MR element 208 may be placed between the coils 204 and 206. In this arrangement, the net magnetic field at the MR element 208 would be zero when there is no magnetic field other than those generated by the coils 204 and 206. For example, the negative Z-component of the magnetic field generated by coil 204 may be cancelled by the positive Z-component of the magnetic field generated by coil 206, and the negative X-component of the magnetic field shown above substrate 202 may be cancelled by the positive X-component of the magnetic field shown below substrate 202. In other embodiments, additional coils may be added to the substrate 202 and arranged such that the net magnetic field at the MR element 208 is substantially zero.

To achieve a substantially zero magnetic field at the location of the MR element 208, the coil 204 and the coil 206 may be placed such that the current through the coils flows in a circular pattern substantially in the same plane. For example, current through coils 204 and 206 flows through the coils in a circular pattern. As shown, these circular patterns are substantially coplanar with each other and with the top surface 216 of the substrate 202.

As described above, the coil driver 110 may generate an alternating field. In this arrangement, the magnetic field, shown by the magnetic field lines 211, may change direction and magnitude over time. However, during such changes, the magnetic field at the location of the MR element 208 will remain substantially zero.

In operation, as the target 203 moves toward and away from the MR element 208 (i.e., along the positive Z direction and the negative Z direction), the magnetic field 211 causes eddy currents to flow within the target 203. These eddy currents will create their own magnetic fields that will produce a non-zero magnetic field in the plane of the MR element 208 that can be sensed to detect motion or position of the target 203.

Referring to fig. 2A, a cross-sectional view 250 (view looking in the Y-direction at line 218) of the system 200 illustrates eddy currents within the target 203. The "x" symbol represents current flowing into the page, while the "·" symbol represents current flowing out of the page. As described above, the current through the coils 204 and 206 may be an alternating current that may induce a magnetic field 211 of alternating strength. In an embodiment, the phase of the alternating current through coil 204 matches the phase of the alternating current through coil 206 such that magnetic field 211 is an alternating or periodic field.

The alternating magnetic field 211 generates reflected eddy currents 240 and 242 within the magnetic target 203. The eddy currents 240 and 242 and the current flowing through the coils 204 and 206, respectively, will be in opposite directions. As shown, eddy current 246 flows out of the page and eddy current 248 flows into the page, while coil current 251 flows into the page and current 252 flows out of the page. Additionally, as shown, the direction of eddy current 242 is opposite to the direction of current through coil 206.

The eddy currents 240 and 242 form a reflected magnetic field 254 having a direction opposite to the magnetic field 211. As described above, the MR element 208 detects a net magnetic field of zero resulting from the magnetic field 211. However, in the presence of the reflected magnetic field 254, the MR element 208 will detect a magnetic field that is not zero. The value of the reflected magnetic field 254 at the MR element 208 is non-zero, as illustrated by magnetic field lines 256.

As the target 203 moves closer to the coils 204 and 206, the magnetic field 211 causes stronger eddy currents to be generated in the target 203. Thus, the strength of the magnetic field 254 changes. In FIG. 2A, magnetic field 211' (in the right-hand region of FIG. 2A) would represent a stronger magnetic field than magnetic field 211 due to, for example, the closer proximity of object 203 to coils 204 and 206. Thus, eddy currents 240 ' and 242 ' will be stronger currents than eddy currents 240 and 242, and magnetic field 254 ' will be stronger than magnetic field 254. This phenomenon can lead to: as the target 203 gets closer to the coils 204 and 206, the stronger the magnetic field (i.e., magnetic field 254') is detected by the MR element 208; while the MR element detects a weaker magnetic field (i.e., magnetic field 254) as the target 203 moves farther away from the coils 204 and 206.

In addition, eddy currents 240 'and 242' occur substantially on or near the surface of the target 203. Thus, as the target 203 moves closer to the MR element 208, the MR element 208 experiences a stronger magnetic field from eddy currents as the source of the magnetic field is also closer to the MR element 208.

FIG. 3 is a schematic diagram of a circuit 300, the circuit 300 including coils 302 and 304 and MR elements 306 and 308. Coils 302 and 304 would be the same or similar to coils 204 and 206, and MR elements 306 and 308 would each be the same or similar to MR element 208.

In an embodiment, the coils 302 and 304 and the MR elements 306 and 308 can be supported by a substrate. For example, coils 302 and 304 may include conductive traces supported by a substrate, and MR elements 306 and 308 may be formed on a surface of or in the substrate.

In an embodiment, coils 302 and 304 may comprise a single conductive trace of load current. The portion of the trace forming coil 302 may loop or spiral in the opposite direction as the portion of the trace forming coil 304 so that the current through each coil is equal and flows in the opposite direction. In other embodiments, multiple traces may be used.

Coils 302 and 304 are symmetrically positioned on opposite sides of MR elements 306 and 308 in such a way that MR elements 308 and 304 are in the middle. This may center MR elements 306 and 308 in the magnetic field generated by coils 302 and 304 such that the magnetic field detected by MR elements 306 and 308 (referred to herein as the "directly coupled magnetic field") is substantially zero due to the magnetic field generated by each coil 302 and 304 when there is no other excitation.

Fig. 3A is a schematic diagram of an embodiment of a magnetic field detection circuit 300 ', which magnetic field detection circuit 300' may be the same as or similar to system 100 of fig. 1. The coils 302 and 304 may be supported by a substrate, as described above. The circuit 300' may include four MR elements 310, 312, 314, and 316 coupled in a bridge configuration 318. In an embodiment, bridge 318 may produce a differential output comprised of signals 318a and 318 b.

In certain embodiments, arranging the MR elements as a bridge may increase the sensitivity of the magnetic field sensor. In an embodiment, the target is movable relative to the circuit 300' such that: as the target approaches the circuit, the target moves primarily toward the MR elements 310, 312, rather than toward the MR elements 314, 316. Due to this configuration, as the target approaches and recedes from the MR element, the resistance of MR elements 310 and 312 will change, while the resistance of MR elements 314 and 316 will remain relatively fixed. If, for example, the MR elements are aligned such that the MR resistance of 310, 312 decreases and the resistance of MR elements 314, 316 increases as the target approaches, then signal 318a will decrease and signal 318b will increase as the target approaches. The opposite reaction of the MR elements (and the differential signals 318a and 318b) may increase the sensitivity of the magnetic field detection circuit while also allowing the processor receiving the differential signals to ignore any common mode noise.

In an embodiment, arranging the MR elements 310-316 as a bridge may allow for detection of differences in target locations on the set of resistors and/or detection of phase differences between bridge outputs. This may be used, for example, to detect a tilt or deformation of the target.

The circuit 300' may further include a pad 320 having a plurality of leads 322 that are accessible and may form a connection outside the chip package (not shown). Lead wires or conductive traces 324 may connect the MR elements 310, 312, 314, and 316 to external leads or pads 322 so that the MR elements may be coupled to other circuitry such as, for example, the MR driver 106.

Referring to FIG. 3B, circuit 323 includes four coils 324 and 330 and includes three arrangements 332, 334 and 336 of MR elements. The circuit 323 may be used to detect the position or movement of an object.

The coils may generate magnetic fields in an alternating pattern. For example, coil 324 may generate a field into the page, coil 326 may generate a field out of the page, coil 328 may generate a field into the page, and coil 330 may generate a field out of the page. Thus, the magnetic field detected by the MR elements in the arrangements 332, 334, and 336 will be substantially zero due to the magnetic field generated by each coil 324, 326, 328, 330.

The circuit 323 can also be extended by adding additional coils and additional MR element circuits 323. In embodiments, each additional coil may be configured to create a magnetic field of alternating direction as described above, and the MR element may be disposed between the coils such that the MR element detects a substantially zero magnetic field.

The MR elements in the arrangements 332, 334, and 336 can form a grid. As the target moves over the grid and approaches the MR element, the MR element will be exposed to and detect the reflected magnetic field generated by eddy currents flowing in the target due to the magnetic field generated by each coil 324-330. For example, if the target moves past the MR elements 338 and 340, these MR elements will detect the reflected magnetic field and generate an output signal indicative thereof. The processor receiving the output signals from the MR elements may then identify the location of the target as being above or near the MR elements 338 and 340. If the target is then moved closer to the MR element 342, the MR element 342 will detect the reflected magnetic field from the target and generate an output signal indicating that the target is detected. The processor receiving the output signal may then identify the location of the target as being above or near the MR element 342.

A single large target may be placed in front of grids 332, 334, and 336. Thus, the difference in the reflected field experienced by each MR element is a map of the parallelism of the target to the plane of the grid. The difference may also be used to map the deformation of the target with external constraints.

Referring to fig. 4, the system 400 for detecting a target 402 may also detect the target 402 using a single coil and MR element. The MR element 404 can be disposed adjacent to the coil 406. In an embodiment, the MR element 404 may be placed between the coil 406 and the target 402. In other embodiments, the traces of coil 406 may be placed between MR element 404 and target 402 (not shown).

In a single coil configuration, the MR element 404 is subjected to a magnetic field even if the magnetic target 402 is not present. If the magnetic target 402 is not present, there will be no eddy currents and no reflected magnetic field. However, because the MR element 404 is disposed adjacent to a single coil 406 rather than between two opposing coils, the MR element is subject to a directly coupled magnetic field 405 generated by the coils 406.

The presence of target 402 causes a reflected magnetic field and this additional field may be detected by MR element 404, indicating the presence of target 402. For example, current through coil 406 may cause eddy currents (illustrated by currents 408 and 410) to be generated in target 402, which may generate a reflected magnetic field 412. The reflected magnetic field 412 increases the magnetic field strength experienced by the MR element 404. Thus, when target 402 is present, MR element 404 will detect a stronger magnetic field than when target 402 is not present.

The proximity of target 402 also causes the strength of the reflected magnetic field detected by MR element 404 to increase or decrease. As the target 402 moves closer to the coil 406 (or vice versa), the strength of the eddy currents (illustrated by currents 408 ' and 410 ') will increase, which will produce a reflected magnetic field 412 ' having a greater strength. Thus, as the target 402 moves closer to the coil 406, the MR element 404 will detect a stronger magnetic field.

In the embodiment shown in fig. 4, the MR element 404 is positioned adjacent to the loop of the coil 406. This may allow for greater sensitivity of the MR element 404 to facilitate detection of the reflected field 412. However, because the field generated by coil 406 is non-zero at the location of MR element 404, MR element 404 can detect not only the reflected field, but also the magnetic field directly generated by coil 406 (i.e., the "directly coupled" magnetic field). Different techniques may be used to reduce the sensitivity of the MR element 404 to directly coupled magnetic fields.

Referring to FIG. 5, a circuit 500 includes a coil 502 and four MR elements 1-4 disposed above or below the traces of the coil 502. The MR elements may be connected in a bridge configuration 504. The bridge configuration may provide a differential output consisting of signals 504a and 504 b.

In an embodiment, circuit 500 may be used for single coil circuitry that detects a target. For example, output signal 504a may change when a target approaches MR elements 1 and 2, and output signal 504b may change when a target approaches MR elements 3 and 4. The MR elements 1-4 can be aligned such that: as the target approaches elements 1-4, the value of output signal 504a increases and the value of output signal 504b decreases, or vice versa. For example, in such an embodiment, the fields created by the coils near elements 1 and 2 are of opposite sign compared to the fields created by the coils near elements 3 and 4. Thus, the reflected field is in the opposite direction, which enhances the sensitivity of the bridge differential output to the reflected field, while suppressing the deviation/variation caused by the external common field.

Referring to fig. 5A, the circuit 500' includes a coil 506, the coil 506 being arranged such that: if current flows through coil 506 in the direction indicated by arrow 508, current will flow through coil portion 510 in a clockwise direction and through reverse loop coil portion 512 in a counter-clockwise direction. Thus, coil sections 510 and 512 will generate local magnetic fields in opposite directions, as described above. The MR elements 1-4 can be arranged as shown to form a bridge that provides a differential signal when the target is in proximity. The anti-loops may attenuate the directly coupled magnetic field generated by the coil and detected by the MR element. For example, the magnetic field generated by coil 506 may be directly detected by (e.g., directly coupled to) MR elements 1-4. Coil portions 510 and 512 may each create such a local magnetic field: the local magnetic field is in the opposite direction to the magnetic field generated by the coil 506. Thus, at least in a local region around the MR elements 1-4, the local magnetic field will (at least partially) cancel the direct coupling magnetic field generated by the coil 506. This may reduce or eliminate the direct coupling field detected by the MR elements 1-4 so that the magnetic field detected by the MR elements 1-4 is the reflected field from the target.

In an embodiment, to provide sensitivity detection, an anti-loop is used to measure the reflected field and the direct field of the coil. Additionally, in such a configuration, the MR elements 1-4 can be placed such that the MR elements do not experience (see) the field created by the primary coils.

In an embodiment, the targets may be positioned adjacent to MR elements 1 and 3 rather than adjacent to 2 and 4 (or vice versa). If the MR elements 1-4 are arranged in a bridge configuration, the differential output of the bridge will change as the target moves toward or away from, for example, the MR elements 1 and 3.

In an embodiment, the target may be positioned such that: MR elements 1 and 2 experience a reflected magnetic field in one direction (e.g., one side experiencing a reflected magnetic field) while MR elements 3 and 4 experience a reflected magnetic field in the opposite direction (e.g., the other side experiencing a reflected magnetic field). In this embodiment, as the target moves closer to the MR element, signal 504a increases and signal 504b decreases (or vice versa), thereby producing a differential signal.

Referring to FIG. 5B, circuit 500' includes two MR bridges. MR bridge 514 contains MR elements 1-4 and produces a differential output signal comprised of signals 514a and 514b, while MR bridge 516 contains MR elements 5-8 and produces a differential output signal comprised of signals 516a and 516 b. As the target approaches MR elements 1-8, the output signals of MR bridges 514 and 516 change, indicating the presence and proximity of the target. Circuit 500 "is also shown with a pad 518.

In an embodiment, the target may be positioned in proximity to the bridge 514(MR elements 1-4) such that: as the target moves closer to or further from bridge 514, the differential output of bridge 514 is affected. In this embodiment, the output of bridge 516 remains relatively stable as the target moves. Thus, the output of the bridge 516 may be used as a reference. In particular, this arrangement may be applicable in the following cases: the object to be detected is relatively close to the bridge 514 such that movement of the object has a greater effect on the bridge 514 and has less or no effect on the bridge 516.

Additionally or alternatively, the same configuration may also be used to measure the difference of two distances: a first distance between a large target and MR elements 1, 2, 3 and 4, and a second distance between the corresponding target and MR elements 5, 6, 7 and 8.

Additionally or alternatively, the same configuration of FIG. 5B may also be used to accurately determine the centering of the target along the following planes: the plane is perpendicular to the coil plane and intersects the coil plane along a line 530, the line 530 being at an equal distance between the bridges 514 and 516.

Referring to fig. 5C, the circuit 501 includes a coil 520 and a plurality of MR elements 522 spaced around the coil 520. The MR elements 522 may form a grid similar to the grid described above and shown in fig. 3B. In an embodiment, the MR elements 522 may be connected in a bridge configuration. In other embodiments, the MR element 522 can function as a separate circuit (or part of a separate circuit) that is not shared with other MR elements. In either case, the MR element 522 generates a signal when the target (and its reflected magnetic field) is detected. The processor may receive these signals and calculate the position, location, velocity, parallelism, angle, or other properties of the target.

In an embodiment, the circuit 501 may be used to detect the position of a target in three dimensions relative to the coil. Since the MR elements are positioned in a plane along the coil 520, the MR elements can act as a grid. When a target is in proximity to one (or more) of the MR elements, the MR elements will generate an output signal that can be used to determine the position of the target along both dimensions of the grid. In addition, as described above, the coil 520 and the MR element may be used to detect distances from the MR element in a direction orthogonal to the two dimensions of the coil and the grid (i.e., in and out of the page).

Referring now to fig. 6, a circuit 600 for detecting a target may include a coil 602 and include one or more MR elements 604 and 606. The coil 602 may have two coil portions 608 and 610 separated by a gap 612. In an embodiment, current through portions 608 and 610 flows in the same direction. For example, if the current through portion 608 flows around the coil in a clockwise direction, then the current through portion 610 also flows in a clockwise direction.

The MR elements 604 and 606 may be placed within the gap such that the MR elements are not directly above (or directly below) the traces of the coil 602. Placing the MR element within the gap 612 can reduce capacitive or inductive coupling between the coil 602 and the MR elements 604 and 606. Additionally, the gap 612 may have a width W that is less than the distance between the MR element and the target. Because the gap 612 is relatively small, eddy currents induced in the target and thus the reflected magnetic field may appear (i.e., what the MR element detects) as if a single coil without any gaps between the parts is generating a magnetic field.

In an embodiment, positioning the MR element within the gap 612 may reduce the sensitivity of the MR element to the directly coupled magnetic field generated by the gap 612, allowing the MR element to maintain sensitivity to the reflected field.

In other embodiments, the coil 602 may include a jog (jog) in one or more traces. The MR elements 604 and 606 may be aligned with the jog.

FIG. 7 is a cross-sectional view of a circuit having MR elements 604 and 606 sandwiched between traces of a coil 700. In an embodiment, coil 700 and coil 602 would be the same or similar. The coil traces 602a and 602b may be positioned on a surface of a substrate (not shown). The MR elements 604 and 606 can be placed on top of the traces 602a and 602b such that the traces 602a and 602b are positioned between the MR elements 604 and 606 and the substrate. Additional layers of traces 614a and 614b may be positioned atop MR elements 604 and 606. Traces 602a, 602b, 614a, and 614b may be part of the same coil such that current flowing through the traces flows in a circular or spiral pattern to induce a magnetic field. Placing MR elements 604 and 606 between the traces of the coil may attenuate the direct coupling magnetic field generated by the coil.

Referring to FIG. 8, a pressure sensor 800 includes a magnetic field sensor 802 having a substrate 803 supporting a coil 804 and MR elements 806 and 808. In an embodiment, the magnetic field sensor may be the same or similar to circuit 500 in fig. 5, circuit 300 in fig. 3, or any of the magnetic field detection circuits described above that are capable of detecting the proximity of an object.

In an embodiment, the coil 804 and the MR elements 806, 808 can be supported by the same substrate 803. In other embodiments, the MR element 806, the MR element 808, and the coil 804 can be supported on different substrates (not shown). For example, the coil 804 may be supported by one substrate, while the MR elements 806 and 808 may be supported by a different substrate. In another example, the MR element 806, the MR element 808, and the coil 804 can each be supported by a separate substrate. Any other combination of substrates supporting the circuit elements is also possible.

Pressure sensor 800 includes a chamber 810, chamber 810 having a conductive portion 811 and a deformable portion 812. In an embodiment, the chamber 810 is formed from an elongated tube. In the embodiment of fig. 8, the conductive portion and deformable portion 812 may comprise a membrane disposed at one end of the tube, which may act as a diaphragm, and which may be deformed to move toward or away from the magnetic field detection circuit 802.

The deformable portion 812 may be formed of stainless steel, beryllium copper, titanium alloys, superalloys, and/or sapphire. When the pressure inside chamber 810 is greater than the pressure outside chamber 810, deformable portion 812 may bulge toward magnetic field detection circuit 802. If the pressure outside the chamber 810 is greater, the deformable portion 812 will retract away from the magnetic field detection circuitry 812, and if the pressure inside and outside the chamber 810 is in equilibrium, the deformable portion will assume a neutral position between the projected position and the retracted position.

In the case where the deformable portion is circular, the deformation of the membrane is given by the following equation:

where h is the thickness of the deformable portion, ν is the Poisson modulus, E is the young's modulus, a is the radius of the deformable portion, and r is the point at which deformation is measured.

In an embodiment, the maximum deformation may be small enough that the deformable portion is always within the elastic domain of the material even at temperatures above 180 ℃. For this reason, superalloys like maraging alloys or titanium alloys may be suitable materials.

The magnetic field detection circuit 802 may include at least one magnetic field sensing element 806 and/or 808 disposed proximate to the coil 804, as described above. The coil 804 may generate such a magnetic field: the magnetic field induces eddy currents and reflected magnetic fields in the conductive portion 812 similar to those described above. The magnetic field detection circuit 802 may further include circuitry for generating an output signal indicative of a pressure difference between the interior and exterior of the chamber 810.

In an embodiment, the magnetic field detection circuit 802 includes two spaced apart MR elements 806 and 808, and the magnetic field detection circuit detects a distance between the conductive portion 812 and one of the MR elements 806 and 808 when the deformable portion protrudes toward and/or retracts away from the MR element. In an embodiment, the magnetic field detection circuit 802 may be configured to detect a difference between: a) a distance between the conductive portion 812 and the magnetic field sensor 808, and b) a distance between the conductive portion 812 and the magnetic field sensor 806. The difference between these distances may be used to generate an output signal for the magnetic field detection circuit 802.

The output signal generated by the magnetic field detection circuit 802 is representative of the distance, which the processor can then receive to calculate the associated pressure within the chamber 810. The MR elements 806 and 808 may include multiple MR elements and may be arranged in a bridge configuration (as described above) to produce differential outputs.

In an embodiment, the MR element 806 is aligned with an edge of the conductive deformable portion 812, and the MR element 808 is aligned with a center or central region of the conductive deformable portion 812. In this arrangement, as the deformable portion 812 moves toward and away from the MR element 808, the MR element 808 will react while the MR element 806 will not be affected or will be affected to a significantly lesser degree than the element 808 and, thus, the MR element 806 will have a relatively fixed resistance value. Positioning the MR element in this manner can be used to remove errors caused by stray fields. Positioning the MR elements in this manner can also help compensate for air gap tolerances between the MR elements. For example, the difference in the distance detected by the two sensors may be used to compensate for small changes in the air gap over time, temperature, etc.

Referring to fig. 8A, another embodiment of a pressure sensor 818 includes a first elongate tube 820 having a deformable sidewall 821 and an opening 823 that allows fluid to enter a chamber within the elongate tube 820. When the fluid induces pressure within tube 820, sidewall 821 may bulge or bulge like a balloon. The end 828 of the tube 820 may be conductive.

Pressure sensor 818 also includes a second elongated tube 822 having an opening 824. Elongate tube 822 may have rigid walls 826 and an opening 824. The opening 824 may have a diameter or size large enough to enable the tube 820 to be inserted into the opening 824.

Pressure sensor 818 may include a magnetic field sensor 830, and magnetic field sensor 830 may be the same or similar to magnetic field sensor 802 and/or any of the magnetic field sensors described above.

In an embodiment, when the tubes 820, 822 are assembled, the conductive end 828 of the tube 820 may be positioned adjacent to the MR element 808. The rigid walls of tube 822' may inhibit lateral expansion of deformable sidewall 821 as the pressure within tube 820 increases and decreases. However, end 828 can bulge and, when the pressure within lumen 823 changes, end 828 can bulge toward MR element 808 and retract away from MR element 808. The magnetic field sensor 830 can detect the change in distance and generate an output signal representative of the distance between the tip 828 and the MR element 808. In an embodiment, the magnetic field detection circuit 802 may be configured to detect a difference between: a) the distance between conductive end 828 and magnetic field sensor 808, and b) the distance between conductive 808 and magnetic field sensor 806. The difference between these distances may be used to generate an output signal for magnetic field detection circuit 830. The processor circuit may receive the signal and calculate the pressure within the tube 820 based on the distance.

Referring also to fig. 9, pressure sensor 900 includes a first substrate 902, which may be the same as or similar to substrate 803 of fig. 8, and a second substrate 904 attached to first substrate 902. The second substrate 904 may include a surface 908 and a recess 906 formed in the surface. The recess 906 may be etched into the substrate. In an embodiment, the wafer 904 may be etched such that the wafer is thin enough to be able to flex under pressure, as shown by the dashed line 910. The flexure of the wafer 904 may be detected (via the reflected magnetic field as described above) by an MR element supported by the substrate 902. The detected deflection may then be correlated/correlated to pressure.

In an embodiment, similar to the arrangement described above and illustrated in fig. 8A, the MR elements on the substrate 902 may be positioned such that: the one or more MR elements are adjacent to an edge (e.g., a non-flexing portion) of the recess 906 and the one or more MR elements are adjacent to a center (e.g., a flexing portion) of the recess 906.

In an embodiment, substrate 904 may be formed of a conductive material (e.g., copper). Thus, movement of the conductive deformable portion of substrate 904 caused by pressure on substrate 904 (and/or pressure within recess 906) may be detected by the magnetic field sensor on substrate 902.

Alternatively, the substrate 904 may be formed of a crystalline material (e.g., sapphire) coated with a sufficiently thick conductive material (e.g., copper).

In an embodiment, the recess 906 is evacuated during the manufacturing process in order to determine the reference pressure. In an embodiment, the reference pressure is a vacuum or a pressure less than a standard pressure (e.g., less than 100 kPa). In some configurations, one or more of the output signals of an MR bridge (e.g., bridge 318 in fig. 3A) may be used to generate a value representative of the reference pressure.

Referring to FIG. 10, a block diagram of a magnetic field sensor 1000 is shown. The magnetic field sensor includes a coil 1002 for generating a magnetic field, a coil driver 1004 for powering the coil, an MR element 1006, and an MR driver circuit 1008 for powering the MR element 1006. The MR element 1006 may be a single MR element, or the MR element 1006 may include multiple MR elements, which may be arranged in a bridge configuration. As described above, the coil 1002 and MR element 1006 may be configured to detect the distance of a conductive target. In an embodiment, the coil driver 1004 and/or the MR driver 1008 may generate AC outputs to drive the coils 1002 and the MR element 1008, as described above and as indicated by the AC source. The AC source 1010 may be a common source for both the drive coil 1002 and the MR element 1006. In an embodiment, signal 1012 may be an AC signal.

The magnetic field sensor 1000 further comprises an amplifier for amplifying the output signal 1012 of the MR element 1006. The output signal 1012 may be a differential signal and the amplifier 1014 may be a differential amplifier. The output signal 1012 and the amplified signal 1016 may be DC signals.

The magnetic field sensor 1000 may further include a low pass filter 1018 for filtering noise and other artifacts from the signal 1016, and an offset/compensation module 1024 that may vary the magnitude of the output signal based on the temperature (e.g., the temperature measured by the temperature sensor 1020) and the type of material derived from the material type module 1022. A piecewise linearization circuit 1026 may also be included that may perform a linear regression on the compensated signal 1028 and generate an output signal 1030.

In an embodiment, the reflected magnetic field from the target will have a frequency f (the same frequency as the coil driver 1004). Since the magnetic field generated by the coil 1002 has the same frequency as the reflected field, the output of the MR element 1006 will include a 0Hz (or DC) component, a frequency f component, and a harmonic component of the frequency f. Those skilled in the art will appreciate that the lowest frequency harmonic components will occur at the frequency 2 x f. However, any difference in the balance of the MR bridge also generates a frequency component, which may also be present in the signal. Thus, low pass filter 1018 may be configured to remove frequencies f andhigher (frequency) (i.e., low pass filter 1018 may include a cut-off frequency f_cutoffWherein f is_cutoff<f. In an embodiment, the filter may be designed to remove possible f-signals. Accordingly, the frequency f may be selected to be a frequency greater than the target motion frequency range.

In an embodiment, the sensitivity of the MR element 1008 varies with temperature. The intensity of the reflected field will also vary with temperature depending on the target material type and frequency. To compensate, module 1022 may include parameters for compensating for temperature effects and/or effects of materials used. The parameters may include linear and/or second order compensation values.

In an embodiment, processing circuit 1032 may process signals representative of the magnetic field. Since the MR element 1006 and the coil 1002 are driven using a common source 1010, the frequency of the coil 1002 and the MR element 1006 are approximately the same. In this case, post-processing of the signal may include filtering, linear regression, gain and amplification, or other signal shaping techniques.

The MR element 1006 can detect the magnetic field directly generated by the coil 1002 and the reflected magnetic field generated by eddy currents induced in the conductive target by the magnetic field generated by the current through the coil 1002.

Referring to fig. 10A, a magnetic field sensor 1000' may include a coil 1002, a coil driver 1004, a common AC source 1010, an MR driver 1008, an MR element 1006, an amplifier 1014, and a low pass filter 1018, as described above.

The magnetic field sensor 1000' differs from the sensor 1000 of FIG. 10 in the following ways: the magnetic field sensor 1000' is a closed loop sensor and thus may further comprise a second coil 1035, which may operate at a different AC frequency than the coil 1002. In this example, coil 1035 may be 180 degrees out of phase with coil 1002, as indicated by the "-f" symbol. The coil 1035 also generates a first magnetic field that can be used to detect the target. In an embodiment, coil 1035 may be relatively smaller than coil 1002. The coil 1035 may be placed adjacent to the MR element 1006 to generate a magnetic field that can be detected by the MR element 1006 but that does not generate eddy currents in the target.

In an embodiment, the coil 1035 may be used to offset/compensate for errors caused by the magnetoresistance of the MR element. For example, the magnitude of the current driven through the coil 1035 may be varied until the output of the MR element 1006 becomes zero volts. At this point, the current through coil 1035 may be measured (e.g., by measuring the voltage across a shunt resistor in series with coil 1035). The measured current can be processed similarly to the output of the MR element 1006 to remove the magnetoresistive error associated with the MR element 1006.

The magnetic field sensor 1000' may further include an amplifier 1036 for receiving the signal 1038. The magnetic field sensor 1000' may further include a low pass filter 1019, a material type module 1022, a temperature sensor 1020, an offset/compensation module 1024, and a piecewise linearization module 1026, as described above.

Fig. 11-11F include different examples of magnetic field sensors having signal processing for attenuating inductive coupling or other noise from affecting signal accuracy. The example magnetic field sensors of fig. 11-11F may also employ various features related to detecting reflected fields from a target, such as frequency hopping, etc. Such a magnetic field sensor may further comprise circuitry for calculating a sensitivity value.

Referring now to FIG. 11, a magnetic field sensor 1100 may include a coil 1002, a coil driver 1004, an AC driver 1010, an MR driver 1008, an MR element 1006, an amplifier 1014, a low pass filter 1018, a temperature sensor 1020, a material type module 1022, an offset/compensation module 1024, and a piecewise linearization module 1026.

The MR element 1006 may be responsive to the sensing element drive signal and configured to detect the directly coupled magnetic field generated by the coil 1002 to produce a signal 1012 in response. The processing circuitry may calculate a sensitivity value associated with the detection of the directly coupled magnetic field generated by the coil 1002 by the MR element 1006. The sensitivity value will be substantially independent of the reflected field generated by eddy currents in the target.

As shown, the AC driver 1010 is coupled to the coil driver 1004 but not to the MR driver 1008 in the sensor 1100. In this embodiment, the MR driver 1008 can generate a DC signal (e.g., a signal having a frequency of about zero) to drive the MR element 1006.

The coil 1002 may generate a DC (or substantially low frequency AC) magnetic field that may be detected by the MR element 1006, but that does not generate eddy currents in the target. The signal resulting from detecting a DC (or substantially low frequency AC) magnetic field can be used to adjust the sensitivity of the magnetic field sensor.

The coil 1002 may also generate a higher frequency AC magnetic field that induces eddy currents in the target that generate a reflected magnetic field at the higher frequency that is detectable by the MR element 1006.

The MR element 1006 may generate a signal 1012, which signal 1012 may include a frequency component of a DC or substantially low AC frequency (e.g., a "directly coupled" signal or signal component) representing a lower frequency magnetic field that does not induce eddy currents in the target, and/or a frequency component of a higher AC frequency (e.g., a "reflected" signal or signal component) representing the detected reflected field. The directly coupled signal may be used to adjust the sensitivity of the sensor, while the reflected signal may be used to detect a target. The coil driver 1004 and/or the MR driver 1008 may use the directly coupled signals as sensitivity signals in response to which their respective output drive signals are adjusted.

In an embodiment, the directly coupled signal and the reflected signal may be included as frequency components of the same signal. In this case, the coil 1002 may be driven to generate two frequency components simultaneously. In other embodiments, the generation of the directly coupled signal and the reflected signal may be generated at different times, such as with a time division multiplexing scheme.

The sensor 1100 may further include a demodulator circuit 1050 that may modulate the signal 1016 to remove AC components from the signal or to shift AC components within the signal to different frequencies. For example, demodulator circuit 1050 may modulate signal 1016 at frequency f. Since signal 1016 includes a frequency f signal component representative of the detected magnetic field, modulating signal 1016 at frequency f may shift the signal elements representative of the detected magnetic field to 0Hz or DC, as is known in the art. Other frequency components within the signal 1016 may be shifted to higher frequencies so that these other frequency components may be removed by the low pass filter 1018. In an embodiment, the DC or low frequency components of signal 1016, which may represent sensitivity values, may be fed back to: a coil driver 1004 to adjust the output of the coil 1002 in response to the signal; and/or an MR driver 1008 to adjust the drive signal 1009 in response to the sensitivity value. The DC output signal 1052 may represent the proximity of a target to the MR element 1006.

In other embodiments, a time division multiplexing scheme may be used. For example, the coil driver 1004 may drive the coil 1002 at a first frequency during a first time period, at a second frequency during a second time period, and so on. In some examples, the first and second (and subsequent) time periods do not overlap. In other examples, the first and second time periods may overlap. In these examples, the coil driver 1004 may drive the coils 1002 at two or more frequencies simultaneously. When the first and second time periods do not overlap, the demodulator 1050 may operate at the same frequency as the coil driver 1004. When the time periods overlap, multiple modulators may be used, with a first modulator operating at a first frequency and a second modulator operating at a second frequency to separate out the signals at each frequency.

While it may be advantageous to attenuate the directly coupled magnetic field detected by the MR element 1006 to enable accurate readings of the reflected field (and hence the target being detected), it may also be advantageous to have a certain amount of direct coupling (i.e., for directly detecting the magnetic field generated by the coil 1002) to allow for the calculation of sensitivity values. The simultaneous measurement of both the reflected field and the field created by the coil allows to accurately determine object distances independent of the sensitivity of the MR element, the coil drive current, etc. The sensitivity of the MR element can vary with temperature and/or with the presence of unwanted DC or AC stray fields in the plane of the MR array. The ratio between the reflected field and the coil field depends only on the design in terms of geometry and is therefore a good parameter for accurately determining the distance.

Referring to fig. 11, a frequency hopping scheme may be used. For example, the coil driver 1004 may drive the coil 1002 at various frequencies (e.g., alternating between frequencies over time, or producing a signal containing multiple frequencies). In such embodiments, the sensor 1100 may include multiple demodulator circuits and/or filters to detect signals at each frequency.

Referring to FIG. 11A, a magnetic field sensor 1100' includes a coil 1002, a coil driver 1004, an AC driver 1010, an MR driver 1008, an MR element 1006, an amplifier 1014, a low pass filter 1018, a temperature sensor 1020, a material type module 1022, and an offset/compensation module 1024.

As shown, the AC drive 1010 is coupled to the coil drive 1004 to drive the coil 1002 at a frequency f 1. The MR driver 1008 is coupled to the AC driver 1102 to drive the MR element 1006 at a frequency f 2. The frequencies f1 and f2 may be different frequencies, and may be non-harmonic frequencies (in other words, f1 may not be a harmonic frequency of f2 and vice versa). In an embodiment, the frequency f1 is lower than the frequency f 2. In other embodiments, the frequencies f1 and f2 may be relatively close to each other such that the difference between the two frequencies is much lower than f1 and f 2. The frequency f2 may be a null or non-null frequency, but alternatively f1 may be selected to be greater than f 2. Then, demodulation is performed at f2-f 1.

In an embodiment, the frequency f1 may be selected to avoid generating eddy currents in the target greater than a predetermined level, and/or the frequency f1 may be selected to provide total reflection of the target. The reflected field will be related to the skin depth of the target according to the following formula:

in the above equation, σ is the conductivity of the target material, μ is the permeability of the target material, and f is the operating frequency. If the thickness of the target material is greater than about 5 times the skin depth δ, the field will be fully reflected. In the case where the target thickness is equal to the skin depth, only about half of the field will be reflected. Therefore, selecting the frequency f low enough so that the skin depth becomes larger than the target thickness can induce low eddy currents and reflected fields with reduced intensity. The formula given above would be effective for high conductivity and low magnetic materials. For low conductivity materials or for ferromagnetic materials, the loss of eddy currents (which can be interpreted as complex skin depth) can lead to a reduction in the strength of the reflected field.

The circuit 1100' may further include a band pass filter 1104 and a demodulator circuit 1106. The band pass filter 1104 may have a pass band that does not include frequencies f1 and f2 but retains frequencies | f1-f2 |. In this way, the induced noise carried into the magnetic sensor by the coils and/or the GMR driver can be filtered out. The circuit 1100' may further include a demodulator circuit 1106 that demodulates at a frequency | f1-f2| and a low pass filter to recover a signal centered at/near DC that may represent the magnetic field sensed by the magnetic sensor at (frequency) f 1. In one embodiment, signals with frequencies | f1-f2| may contain information about the target and/or the directly coupled magnetic field, but noise from inductive coupling or other noise sources may be attenuated.

Referring now to FIG. 11B, a magnetic field sensor 1100' includes a coil 1002, a coil driver 1004, an AC driver 1010, an MR driver 1008, an MR element 1006, an amplifier 1014, a low pass filter 1018, a temperature sensor 1020, a material type module 1022, an offset/compensation module 1024, and a piecewise linearization module 1026.

As shown, the AC driver 1010 is coupled to the coil driver 1004, but not to the MR driver 1008 in the sensor 1100. In this embodiment, the MR driver 1008 can generate a DC signal (e.g., a signal having a frequency of about zero) to drive the MR element 1006.

The coil 1002 may generate an AC magnetic field that induces eddy currents and a reflected magnetic field in the target.

The sensor 1100 "can further include demodulation circuitry 1060 that can demodulate the signal 1016. Demodulation circuit 1060 may multiply signal 1016 by a signal of frequency f, which may shift information about the object in signal 1016 to DC and may shift noise or other information in the signal to a higher frequency. The low pass filter 1018 may remove higher frequency noise from the signal. In an embodiment, demodulation circuit 1060 may be a digital circuit that demodulates signal 1016 in the digital domain or an analog signal (circuit) that demodulates signal 1016 in the analog domain.

The sensor 1100 "may further include a phase detection and compensation circuit 1062 that detects the phase and/or frequency of the current in the coil 1002 and the magnetic field generated by the coil. Circuitry 1062 may detect and compensate for the inconsistency in the phase and f of coil 1002 and generate a correction signal 1063 that may be used to modulate signal 1016.

In embodiments, the frequency f, the type of target material, the shape of the target, wiring and electronics, and/or other factors may cause a phase shift between the drive signal 1010 of the coil 1002 and the reflected magnetic field detected by the MR element 1008. The phase between the signals may be measured and may be used to adjust the phase of the signal 1063 from the phase detection and compensation circuit 1062 to match the phase of the signal 1016.

A frequency hopping scheme may also be used. For example, the coil driver 1004 and/or the MR driver 1008 may drive signals at multiple frequencies. The phase detection and compensation module 1062 may adjust the phase of the phase matched signal 1016 of the signal 1063 at each frequency.

Referring now to fig. 11C, a magnetic field sensor 1100' "includes a coil 1002, a coil driver 1004, an AC driver 1010, an MR driver 1008, an MR element 1006, an amplifier 1014, a temperature sensor 1020, a material type module 1022, an offset/compensation module 1024, and a piecewise linearization module 1026.

As shown, the AC driver 1010 is coupled to the coil driver 1004, but not to the MR driver 1008 in the sensor 1100. In this embodiment, the MR driver 1008 can generate a DC signal (e.g., a signal having a frequency of about zero) to drive the MR element 1006.

The coil 1002 may generate an AC magnetic field that induces eddy currents and a reflected magnetic field in the target. The reflected magnetic field may be detected by the MR element 1006, which generates a signal 1012 representative of the detected magnetic field.

The sensor 1100' "may further include Fast Fourier Transform (FFT) circuitry 1070 that is capable of performing an FFT on the signal 1016. Performing an FFT can identify one or more frequency components in the signal 1016. In an embodiment, FFT circuit 1070 is able to identify the frequency component of signal 1016 having the largest magnitude, which may represent the detected magnetic field at frequency f. FFT circuitry 1070 may generate output signal 1072, output signal 1072 including the detected signal at frequency f and also any other frequency components of signal 1016.

Alternatively, the driver may generate different frequencies fa, fb, fc simultaneously, and the FFT module may calculate the amplitudes of fa, fb, fc (frequency components), which may be used to determine different parameters of the target including position, material, thickness, etc. Furthermore, if a disturbance (e.g., due to deformation of the target, stray magnetic fields, noise sources, etc.) occurs at a particular frequency, the system may detect the disturbance and ignore the data for that frequency. The magnitude calculated by the FFT module may also be used to determine whether there is interference at any particular frequency, which may be ignored by subsequent processing. In an embodiment, FFT temperature gain compensation and linearization may be calculated in the analog domain and/or the digital domain.

Referring now to fig. 11D, a magnetic field sensor 1100D includes a coil 1002, a coil driver 1004, an MR driver 1008, and an MR element 1006. The output signal 1007 of the MR sensor 1006 may represent the detected magnetic field. Although not shown, the sensor 1100D may further include an amplifier 1014, a low pass filter 1018, a temperature sensor 1020, a material type module 1022, an offset/compensation module 1024, and a piecewise linearization module 1026. An oscillator 1182 may be used to operate the coil driver 1004 at the frequency f.

As shown, vibrator 1182 is coupled to coil driver 1004, but not to MR driver 1008 in sensor 1100D. In this embodiment, the MR driver 1008 can generate a DC signal (e.g., a signal having a frequency of about zero) to drive the MR element 1006.

Sensor 1100D also includes quadrature demodulation circuit 1180. Quadrature demodulation circuit 1180 includes a phase shift circuit 1188 that produces a 90 ° phase shift of drive frequency f. The oscillator 1182 may generate a cosine signal having a frequency f. Thus, the output of the phase shift circuit 1188 will be a sinusoidal signal at frequency f. Thus, the detected signal of the MR sensor 1006 can be separated into in-phase and out-of-phase components (such as signals 1184a and 1186a) by multiplication in demodulators 1190 and 1192 (and subsequent low pass filters). The resulting phase and amplitude can be used to determine information about the reflected field and the target. For example, the phase information may be used to determine whether a defect or anomaly is present in the target, to determine the magnetic properties of the target material, whether the target is properly aligned, and so forth. The oscillator 1182 may also generate a square wave with a period of 1/f, and the phase shift circuit 1188 may shift the time of the square wave by 1/(4 f).

Referring to fig. 11E, in another embodiment, instead of providing both in-phase and out-of-phase information, the magnetic field sensor 1100E may generate quadrature modulated signals via two signal paths. In circuit 1100E, half of the MR elements may be driven by a signal of frequency f, and half of the MR elements may be driven at 90 ° out of phase frequency. The demodulation loop (e.g. the circuit comprising the demodulation function of the system) would be the same or similar to the demodulation circuit in fig. 10, including the DC low pass filter and compensation and linearization would also be the same or similar.

In an embodiment, quadrature modulation may be used to determine the absolute amplitude and phase of the return signal. This may allow for automatic correction of unwanted phase loss in the signal, which may provide a more accurate determination of the target property and recovery of information related to the magnetic or loss properties of the material.

Referring to FIG. 11F, a magnetic field sensor 1100F includes a coil driver 1004, the coil driver 1004 being at a frequency F₁The coil 1002 is driven. The MR driver 1008 can be at the same frequency f₁But drive the MR elements 90 degrees out of phase with respect to the coil driver 1004. Thus, the signal 1016 generated by the MR element 1006 can have a value of f₁Two times (i.e., 2 f)₁) Which is the result of a multiplication of a sine and a cosine. Sensor 1100F can include a demodulator circuit 1195 that can demodulate the signal, thereby converting the reflected field information to a frequency near DC.

Referring to fig. 12, the signal 1270 may represent a signal used by the coil driver 1004 to drive the coil 1002. When the signal is high, the coil driver 1004 will drive the coil 1002 in a manner that causes current to flow in one direction, and when the signal is low, the coil driver will drive the coil 1002 in a manner that causes current to flow in the opposite direction. In an embodiment, the coil driver 1004 may drive the coil 1002 at a direct current (i.e., DC) or at a frequency that: the frequency is low enough that the magnetic field generated by the coil 1002 does not cause eddy currents in the target.

As an example, referring to the skin depth formula above, the skin depth of copper at 50Hz would be about 10mm, and at 10kHz the skin depth of copper would be about 600 μm. Thus, given a 0.5mm thick copper target, frequencies below 5kHz create a relatively low intensity reflected magnetic field.

The coil driver 1004 may drive the coil 1002 at a relatively low frequency or at a DC frequency, as shown by the signal portions 1272 and 1274. The frequency will be low enough and thus the duration of the portions 1272 and 1274 will be long enough so that any eddy currents generated in the target as a result of the signal 1270 switching (e.g., from a high value during portion 1272 to a low value during portion 1274) have sufficient time to settle and dissipate. The direct coupling signal shown during portions 1272 and 1274 may be switched from high to low (representing a change in the detected magnetic field) to remove any offset caused by the direct coupling magnetic field of the coil 1002.

A portion 1276 of the signal 1270 may represent the magnetic field detected by the MR element 1006 when the coil driver 1004 drives the coil 1002 at a frequency high enough to induce eddy currents in the target. When the portion 1276 is active, the MR element 1006 can detect the directly coupled magnetic field generated directly by the coil 1002 and also detect the magnetic field generated by eddy currents in the target. The detected signal can then be processed to separate the direct coupling field from the field generated by the eddy currents. Although not shown, portion 1276 may have a greater or lesser amplitude than portion 1272 because each portion may contain different information. For example, portion 1276 may include reflected signals as well as directly coupled signals.

As shown in signal 1270, low frequency portions 1272 and 1274 that differ in polarity may be adjacent to each other within signal 1270. In other embodiments, as shown in signal 1270 ', low frequency portions 1272 ' and 1274 ' of different polarity may also not be adjacent to each other within the signal. For example, they may be separated by a high frequency signal portion 1276.

In other embodiments, the coils may be driven at both low frequencies (of the low frequency portions 1272 and 1274) and high frequencies (of the high frequency portion 1276). The frequencies can then be separated using signal processing techniques to measure the response of the MR element.

In some examples, the ratio of the low frequency portions 1272 and 1274 to the high frequency portion 1276 may be used to determine or indicate the amplitude of the reflected signal. Measuring the ratio in this manner may reduce the sensitivity of the amplitude measurement to external, undesirable variations (e.g., variations due to temperature, stray magnetic fields, etc.).

Referring now to fig. 12A, a magnetic field sensor 1200 may be configured to adjust an output signal of the magnetic field sensor in response to a sensitivity value. The sensor 1200 may include a coil 1202 and a coil driver 1204. The MR element 1206 can detect the magnetic field generated by the coil 1202 and reflected by the target, as described above. In an embodiment, the output signal 1208 of the MR element 1206 may include a first frequency and a second frequency. For example, the first frequency may be the frequency of the coil driver and the second frequency may be 0Hz or DC. In this case, the MR element 1206 may be driven by the DC bias circuit 1210. In other examples, the second frequency may be a non-zero frequency.

In another embodiment, the coil driver 1204 may drive the coil 1202 at one frequency during a first time period and at another frequency during a second time period. The time periods may be alternating and non-overlapping.

The sensor 1200 may further include a splitter circuit, which may include one or more low pass filters 1214 and 1216, and demodulators 1224 and 1226. The sensor 1200 may further include a mixer circuit 1212. Oscillators 1218 and 1220 can provide an oscillating signal for driving coil 1202 and processing signal 1208. In an embodiment, oscillator 1220 may provide a frequency (f) that is greater than oscillator 1218_low) Higher frequency (f)_high) Of the signal of (1). In the examples, f_lowAre the frequencies: the frequency is low enough that the target factor frequency f_lowAny reflected field generated is zero; is small enough not toIs detected; or small enough so that its effect on the output is negligible or within the tolerance of the system.

The mixer 1212 may mix (e.g., add) the signals from the oscillators 1218 and 1220 to produce a signal 1222, which is fed to the coil driver 1204. The coil driver 1204 may then drive the coil 1202 in accordance with the mixed signal 1202.

Since the coil 1202 is driven with a mixed signal, the output signal 1208 will contain f detected by the MR sensor 1206_highAnd f_lowOscillation of (frequency component). Demodulator 1226 may be at frequency f_highDemodulating signal 1208 such that frequency f in signal 1208_highThe portions are separated from other frequencies in the signal. Those skilled in the art will appreciate that the demodulation process may cause other frequencies in the signal to shift to higher frequencies. Low pass filter 1214 may then remove these frequencies from the signal and produce a filtered signal 1228, which may include primarily frequency f_highInformation or DC information.

Similarly, demodulator 1224 may operate at frequency f_lowDemodulating signal 1208 such that frequency f in signal 1208_lowThe portions are separated from other frequencies in the signal. Those skilled in the art will appreciate that the modulation process may result in shifting other frequencies in the signal to higher frequencies. The low pass filter 1216 may then remove these frequencies from the signal and generate a filtered signal 1230, which may include primarily the frequency f_lowInformation or DC information. The processing circuitry 1232 may process the signals 1228 and 1230 to generate an output signal 1232 representative of the detected object.

The processing circuitry 1232 may process the signals 1228 and 1230 in various ways, including taking a signal ratio to provide an output of: the output is substantially insensitive to undesirable variations caused by stray magnetic field interference, temperature drift, package stress, or other external stimuli. The acquisition signal ratio may also provide an output of: the output is substantially insensitive to variations in the coil driver (e.g., variations in the current or voltage provided by the coil driver) due to temperature, supply voltage variations, external excitation, etc.

The signal 1230 may also be used as a sensitivity signal fed into the DC bias circuit 1220, as shown by arrow 1234. The DC bias circuit 1210 can adjust the voltage level used to drive the MR element 1206 based on the value of the signal 1230 to compensate for changes in system sensitivity caused by temperature, stray magnetic fields, package stress, and the like.

Referring to fig. 12B, a magnetic field sensor 1200 'would be similar to sensor 1200, and magnetic field sensor 1200' may further include additional in-plane field coils 1236. The DC bias circuit 1236 may drive the coil 1232 with a DC current to create a constant magnetic field. The constant magnetic field would be detected directly by the MR element 1206 and would be a bias magnetic field. In other embodiments, the magnetic field produced by the in-plane field coils 1232 can be used to generate a signal proportional to MR sensitivity that can be detected by MR element 1206 and then fed back and used to adjust the sensitivity of the circuit 1200'. In an embodiment, the magnetic field generated by the in-plane field coils 1232 can be perpendicular to the magnetic field generated by the coils 1202, and the magnetic field generated by the in-plane field coils can be used to increase/decrease the sensitivity of the MR element. The DC bias circuit 1236 may drive the coil 1232 such that sensitivity variations felt by the closed loop system are compensated. In other words, the DC bias circuit may vary the magnitude of the drive current supplied to the coil 1232 in response to the feedback signal 1234 to compensate for the sensitivity error up to the bandwidth of the feedback loop system. The bandwidth may be determined (or at least largely affected) by the cut-off frequency of the filter 1216.

As shown, the DC bias circuit 1236 may receive the signal 1230 and adjust the amount of current provided to the in-plane field coil 1232, which in turn may adjust the strength of the magnetic field generated by the in-plane field coil 1232. Although not shown in FIG. 12B, the DC bias circuit 1210' can also receive a signal 1230 and use the signal 1230 to adjust the current driving the MR element 1206. In an embodiment, the DC bias circuit 1210', the DC bias circuit 1236, or both may adjust their outputs based on the signal 1230.

Referring to fig. 12C, the magnetic field sensor 1240 includes an oscillator 1220, an oscillator 1218, and a mixer 1212. CoilDriver 1204 receives the signal generated by mixer 1212 and uses the signal containing frequency f_highAnd f_lowDrives the coil 1202.

Sensor 1240 may include two (or more) MR elements 1254 and 1256. MR driver 1250 can be coupled to oscillator 1220 and can be at frequency f_highThe MR sensor 1254 is driven, and the MR driver 1252 may be coupled to an oscillator 1218 and may be at a frequency f_lowThe MR sensor 1256 is driven. Low pass filter 1216 may filter output signal 1258 from MR sensor 1254, and low pass filter 1264 may filter output signal 1260 from MR sensor 1256. Due to the frequency employed by each drive MR sensor 1254 and 1256, the output signal 1258 will include f_highFrequency components, and the output signal 1260 would include f_lowA frequency component. The filtered signal 1230 would be a sensitivity signal that can be used to adjust the sensitivity of the sensor 1240. Thus, the signal 1230 may be fed back to the MR driver 1252, the MR driver 1250, and/or the coil driver 1204, which may each adjust their output based on the value of the signal 1230. In an embodiment, signal 1230 may be a DC signal or an oscillating signal.

Referring to FIG. 13, a circuit 1300 includes coils 1302 and MR elements 1-8 arranged in a bridge configuration. The coil 1302 may include so-called opposing coil portions 1304A, 1304B and 1306A, 1306B. The first opposing coil portion 1304A will generate a field to the left for the MR element below it. Subsequently, portion 1304B will produce a field to the right, portion 1306A will produce a field to the right, and portion 1306B will produce a field to the left. MR elements 1 and 3 are positioned near the counter coil portion 1304A, while MR elements 2 and 4 are positioned near the counter coil portion 1304B. The MR elements 5, 6 are positioned near the counter coil portion 1306A, while the MR elements 7, 8 are positioned near the counter coil portion 1306B. In addition, the MR bridges are split such that some elements in each bridge are positioned near the opposing coil portion 1304 and some elements are positioned near the opposing coil portion 1306. For example, the MR bridge 1308 includes MR elements 1 and 3 (positioned near the opposing coil portion 1304) and MR elements 5 and 6 (positioned near the opposing coil portion 1306). The placement of the opposing coil portions 1304 and 1306 affects the magnitude and polarity of the directly coupled field across the MR element.

The MR elements 1, 3 may have a first coupling factor associated with the coil 1302, the MR elements 2, 4 may have a second coupling factor, the MR elements 5 and 6 may have a third coupling factor, and the MR elements 7, 8 may have a fourth coupling factor associated with the coil 1302. In an embodiment, the coupling factors of MR elements 1, 3, 7, and 8 would be equal, and the coupling factors of MR elements 1, 3, 7, and 8 would be opposite to the coupling factors of MR elements 2, 4, 5, and 6. This can be attributed to, for example, coil portions 1304A, 1304B and 1306A, 1306B that are loaded with equal currents in opposite coil directions and the positioning of the MR element relative to them.

In an embodiment, the bridges 1308 and 1310 will respond equally to the reflected field. However, the two bridges will respond oppositely to the directly coupled field. The addition of the outputs of the two bridges will contain information about the reflected field, while the subtraction of the two bridges will contain information about the directly coupled field. The directly coupled field information can then be used as a measure of the sensitivity of the system and can be used to normalize/normalize the reflected field information. In another embodiment, the bridges 1308 and 1310 are equally responsive to the reflected field. However, the two bridges may respond differently (not necessarily exactly oppositely) to the directly coupled field. The subtraction of the two bridges still results in a signal containing only information about the directly coupled field, which can be used as a measure of the sensitivity of the system. The two bridge sums will contain some direct coupling field information together with information about the reflected field. However, when it shows a constant offset, this can be compensated for with the linearizing module.

For example, during operation, the following formula may be applied:

V_bridge1＝(C_r+C₁)*i*S₁

V_bridge2＝(C_r+C₂)*i*S₂

in the above formula, C_rRepresents the reflected field, C₁Representing the directly coupled field detected by the first MR bridge, C₂Representing the directly coupled field detected by the second MR bridge, i is the current through the coil, S₁Represents the firstSensitivity of an MR bridge, and S₂Representing the sensitivity of the second MR bridge. Suppose S1 is S2 and solves for C_r：

The above equation provides C independent of current and sensitivity of the MR element_rAnd (4) calculating an expression. In an embodiment, the geometric layout of the coils, MR elements, and targets can provide C₁＝-C₂. In other embodiments, the geometric layout of the system may provide C₁And C₂Other ratios of (a). With the ratio known, C can be calculated_rThereby providing the value of the reflected field.

Referring to fig. 13A, coil 1302 ' may include opposing coil portions 1304 ' a, 1304 ' B and 1306 ' a, 1306 ' B and gaps between the coil elements. In FIG. 13A, only the middle portion of the coil 1302' and the MR elements 1-8 are shown.

The opposing coil portions 1304 'and 1306' may each be disposed in respective gaps 1350 and 1352 between the primary coil traces. The MR elements 1-8 may also be placed in the gap of the main coil. As with the gaps in FIG. 6, placing the MR elements within the gaps 1350 and 1350 can reduce the sensitivity of the MR elements to directly coupled magnetic fields. Thus, by including gaps 1350 and 1352 for reduced sensitivity and opposing coil portions 1304 ' and 1306 ' for increased sensitivity, the coil design for the coil 1302 ' can adjust the sensitivity of the MR element to the direct coupling field to achieve the desired direct coupling on each element. In an embodiment, the direct coupling field is similar/close in magnitude to the reflected field.

Referring to fig. 13B, a magnetic field sensor 1320 may include a coil 1302, an MR bridge 1308, and an MR bridge 1310, as arranged in fig. 13. The coil driver 1322 may drive the coil 1302 at a frequency f. MR driver 1324 can drive one or both of MR bridges 1308 and 1310 at 0Hz (i.e., DC) or at another frequency.

Demodulators 1324 and 1326 can demodulate the output signals from MR bridges 1308 and 1310, respectively, at frequency f. This may shift frequency components of the frequency f in the signal to 0Hz or DC and may shift other frequency components in the signal to higher frequency bands. Lowpass filters 1328 and 1330 may remove the higher frequency components from the signal and provide a DC signal V1 (corresponding to the magnetic field detected by MR bridge 1308) and a DC signal V2 (corresponding to the magnetic field detected by MR bridge 1310) to processing block 1332. Processing block 1332 may process signals V1 and V2 to generate signals representative of the detected object. In an embodiment, the processing block may perform an operation of (V1+ V2)/(V1-V2), where X is a signal representing the detected object. In this embodiment, the location of the MRs of the bridges 1308 and 1310 are chosen such that the first bridge experiences a negative signal from the coil (directly coupled field) while the second bridge experiences a positive signal from the coil. Both bridges will experience the same reflected signal. Thus, V1+ V2 may generally comprise a reflected signal, while V1-V2 may generally comprise a coil signal. The ratio then gives a quantity X which is independent of variations in the sensitivity of the MR element and variations in the coil current caused by e.g. temperature or stray fields. In this embodiment, the location of the MR (and/or coil) may be selected such that: each MR-sensed (e.g., detectable) coil signal and reflected signal have the same amplitude range, i.e., the reflected field varies substantially from 0.1% to 100% of the direct detection field.

Referring now to FIG. 14, a system 1400 includes a magnetic field sensor 1402 and a target 1404. The magnetic field sensor 1402 may be the same or similar to the magnetic field sensor 100 and/or any of the magnetic field sensors described above. Accordingly, the magnetic field sensor 1402 may include a coil for generating a magnetic field and generating eddy currents within the conductive target 1404 and one or more magnetic field sensing elements for detecting reflected fields from the eddy currents.

By controlling the amount of reflected magnetic signal and using the amount of reflected signal to encode the target position, the skin effect of the target 1404 can be used for linear, velocity, and angle measurement (in the case of a rotating target) detection. The target can be created by combining a high conductivity material (shallow skin depth, measured with a high frequency signal) and a relatively low conductivity material (deep skin depth, measured with a medium or low frequency signal). The target may be created by milling or etching a straight ramp or digitized tooth into a low conductivity material. In a subsequent step, a high conductivity material may be deposited over the surface, after which the surface is milled or polished to create a flat surface. Alternatively, the low conductivity material may be omitted.

The measurement technique may also utilize different frequencies (e.g., of the coil 1002) and the skin effect of the target. The relatively high frequency and shallow skin depth can be used to measure the air gap distance between the sensor and the face of the target. This signal can then be used to calibrate the sensitivity of the system. The mid-frequency, together with a skin depth that exceeds the maximum thickness of the high-conductivity material, can be used to sense the position of the portion of the target formed of the low-conductivity material. A relatively low frequency signal (e.g., low enough so that it is not reflected by the target) can be used to measure the overall sensitivity of the MR sensor and to provide feedback to compensate for any sensitivity changes caused by stray fields, temperature, or package stress. Referring again to fig. 14, target 1404 may include a first material portion 1406 and a second material portion 1408. First material portion 1406 would be a high conductivity material, such as a metal; while second material portion 1408 may be a relatively low conductivity material, such as plastic, ceramic, or other insulating material; or vice versa. In embodiments, first material portion 1406 and second material portion 1408 may be a unitary structure (e.g., may be integrally formed), or first material portion and second material portion may be separate elements physically coupled to one another, as shown in fig. 14.

Thickness 1410 of first material portion 1406 may vary along the length of target 1404 such that: at one end 1412, the first material portion 1406 is relatively thick, and at the other end 1414, the first material portion 1406 is relatively thin. The eddy current induced by magnetic field sensor 1402 at thick end 1412 and thin end 1414 of first material portion 1406 will be different. Accordingly, the reflected magnetic field generated at the thick end 1406 and the reflected magnetic field generated at the thin end 1414 will also differ. Since the thickness of first material portion 1406 varies linearly along the length of target 1404, the reflected magnetic field also varies linearly along the length of target 1404. Thus, the magnetic field sensing elements of the magnetic field sensor 1402 can detect the difference in reflected magnetic field, thereby determining where along the length of the target 1404 the magnetic field sensor 1402 is located. In an embodiment, if a relatively high frequency is used to sense the air gap, the thickness at end 1414 may be selected to be greater than one skin depth at the selected frequency and less than five skin depths at the selected frequency. The thickness at the end 1412 may be selected as compared to a skin depth at relatively lower frequencies.

In an embodiment, target 1404 is movable in a linear direction (shown by arrow 1416) relative to magnetic field sensor 1402. As the target 1404 moves, the magnetic field sensor 1402 can detect changes in the reflected field, thereby determining the position of the target 1404 relative to the magnetic field sensor 1402. Of course, in other embodiments, target 1416 may be stationary while magnetic field sensor 1402 may move relative to target 1404.

As another example, multiple frequencies may be used to determine the air gap and the position of solution target 1404. For example, if the thickness of first material portion 1406 at end 1414 is greater than one skin depth at frequency f1, then the response at frequency f1 will vary only with the air gap between target 1404 and the MR element. Using the second frequency, if the thickness of first material portion 1406 at end 1414 is less than one skin depth at frequency f2, then the response will vary with both the air gap and the position of target 1404.

Referring now to fig. 14A, a system 1400' may include a magnetic field sensor 1402 and a rotating target 1418, which may be cylindrical, gear-shaped, etc. Target 1418 can include a first material portion 1420 and a second material portion 1422. The first material portion 1420 would be a high conductivity material, such as a metal; while second material portion 1422 would be a relatively low conductivity material, such as plastic, ceramic, or other insulating material; or vice versa. In embodiments, the first material portion 1420 and the second material portion 1422 can be a unitary structure (e.g., can be integrally formed), or the first material portion and the second material portion can be separate elements physically coupled to one another, as shown in fig. 14.

The thickness 1423 of the first material portion 1420 may vary around the circumference of the target 1418 with the angle around the target 1418 such that: at point 1424, the first material portion 1420 is relatively thin, while at point 1426, the first material portion 1420 is relatively thick. The eddy current induced by the magnetic field sensor 1402 in the thicker portion of the first material 1420 will be different from the eddy current induced at the thinner portion. Accordingly, the reflected magnetic field generated at point 1424 and the reflected magnetic field generated at point 1426 may also differ. Since the thickness of the first material portion 1420 varies around the circumference of the target 1418 with angle around the target 1418, the reflected magnetic field also varies around the circumference.

Magnetic field sensor 1402 may be placed outside a radius of target 1418 and adjacent to an outer surface of target 1418. Thus, the magnetic field sensing elements of the magnetic field sensor 1402 may detect the difference in the reflected magnetic field in order to determine the angle of rotation of the target 1418. The magnetic field sensor 1402 may also detect a rotational speed and/or a rotational direction of the target 1418.

Referring now to FIG. 14B, the system 1400 "can include a magnetic field sensor 1402 and a rotating target 1428. Target 1428 may include a first material portion 1430 and a second material portion 1432. The first material portion 1430 may be a high conductivity material, such as a metal; while second material portion 1432 would be a relatively low conductivity material, such as plastic, ceramic, or other insulating material; or vice versa. In embodiments, the first and second material portions 1430, 1432 can be a unitary structure (e.g., can be integrally formed), or the first and second material portions can be separate elements physically coupled to one another, as shown in fig. 14.

In FIG. 14B, the thickness of the first material portion 1430 extends into the page. The thickness of the first material portion 1430 may vary around the circumference of the target 1428 with the angle around the target 1428 such that: at point 1434, first material portion 1430 is relatively thick, and at point 1436, first material portion 1430 is relatively thin. The eddy current induced by the magnetic field sensor 1402 in the thicker portion of the first material 1430 and the eddy current induced at the thinner portion may be different. Accordingly, the reflected magnetic field generated at point 1434 and the reflected magnetic field generated at point 1436 will also differ. Since the thickness of the first material portion 1430 varies around the circumference of the target 1428, the reflected magnetic field also varies around the circumference.

Magnetic field sensor 1402 may be placed within a radius of target 1428 and adjacent to a substantially flat face 1440 of target 1428. In other words, if the target 1428 were placed at the end of a rotating shaft, the magnetic field sensor 1402 would be positioned adjacent to the face of one end of the shaft. Thus, the magnetic field sensing elements of the magnetic field sensor 1402 may detect the difference in the reflected magnetic field in order to determine the angle of rotation of the target 1428. The magnetic field sensor 1402 may also detect a rotational speed and/or a rotational direction of the target 1418.

The magnetic field sensor 1402 may be mounted in a slope gauge mode (as illustrated, for example, in fig. 3A). Half of the gradiometers may be in a position where the distance between the conductive portion 1450 and the target remains substantially constant, while half of the gradiometers may be in a position where the slope 1404 of the conductive material is. The difference between the two signals can be used to suppress unwanted fluctuations caused by target vibrations.

Referring to FIG. 15, a system 1500 can include a magnetic field sensing element 1502 and a target 1504. Magnetic field sensor 1502 may be the same as or similar to magnetic field sensor 100 and/or any of the magnetic field sensors described above. Accordingly, the magnetic field sensor 1502 may include a coil for generating a magnetic field and generating eddy currents within the target 1504 and one or more magnetic field sensing elements for detecting reflected fields from the eddy currents.

Target 1504 may include a first material portion 1506 and a second material portion 1508. The first material portion 1506 may be a high conductivity material, such as a metal; while second material portion 1508 may be a relatively low conductivity material, such as plastic, ceramic, or other insulating material; or vice versa. In embodiments, the first and second material portions 1506, 1508 may be a unitary structure (e.g., may be integrally formed), or the first and second material portions may be separate elements physically coupled to one another, as shown in fig. 14.

The first material portion 1506 may include a series of alternating wells 1510 and valleys 1512. Well 1510 will have a thickness 1514 that is relatively greater than the thickness of valleys 1512. Accordingly, the reflected magnetic field generated within well 1510 will be different from the reflected magnetic field generated at valleys 1512. Thus, as the target 1504 moves relative to the magnetic field sensor 1502, the magnetic field sensing elements of the magnetic field sensor 1502 may detect the different magnetic fields generated by the wells 1510 and valleys 1512. The detected magnetic field may be used to detect, for example, the speed, position, angle of rotation, and/or direction of the magnetic target 1500.

System 1500' can include a magnetic field sensor 1502 and a target 1516. The target 1516 may include one or more first material portions 1518 and include second material portions 1520. The first material portion 1518 can be a high conductivity material, such as a metal; while the second material portion 1522 would be a relatively low conductivity material, such as plastic, ceramic, or other insulating material; or vice versa.

The first material portion 1518 may comprise a series of discrete wells positioned in a spaced arrangement along the length of the target 1516. Accordingly, when the magnetic field sensor 1502 is adjacent to the tooth 1518, a reflected magnetic field will be generated and detected. When the magnetic field sensing element is adjacent to an insulating region (e.g., region 1522), the insulating region 1522 does not generate a reflected magnetic field. Thus, as target 1516 moves relative to magnetic field sensor 1502, the magnetic field sensing element of magnetic field sensor 1502 can detect the reflected magnetic field generated by well 1518 and detect when no reflected magnetic field is generated. The detected magnetic field may be used to detect, for example, the speed and/or direction of the magnetic target 1516.

Referring to fig. 15A, a system 1522 may include a magnetic field sensor 1502 and a rotating target 1524. The target 1524 may include a first material portion 1526 and a second material portion 1528. First material portion 1526 would be a high conductivity material, such as a metal; while second material portion 1528 would be a relatively low conductivity material, such as plastic, ceramic, or other insulating material; or vice versa.

The first material portion 1526 may include one or more teeth 1530 positioned at different angles around the circumference of the target 1524 in a spaced arrangement around the circumference of the target 1524. Although two teeth are shown, target 1524 may include one tooth, two teeth, or more teeth in spaced relation around the circumference of target 1524. The teeth may be evenly spaced or spaced in a non-uniform manner.

Accordingly, when the magnetic field sensor 1502 is adjacent to the teeth 1530, a reflected magnetic field will be generated and detected. When the magnetic field sensing element is not adjacent to the teeth, the first material portion 1526 may generate reflected magnetic fields of different strengths. Thus, as the target 1524 rotates relative to the magnetic field sensor 1502, the magnetic field sensing elements of the magnetic field sensor 1502 can detect the reflected magnetic field generated by the teeth 1530 and the reflected magnetic field generated by the un-toothed regions of the first material 1526. The detected magnetic field may be used to detect, for example, the speed and/or direction of the magnetic target 1500.

Referring to fig. 15B, a system 1522' may include a magnetic field sensor 1502 and a rotating target 1532. The target 1532 may include one or more first material portions 1534 and a second material portion 1536. The first material portion 1534 may be a high conductivity material, such as a metal; while the second material portion 1536 may be a relatively low conductivity material such as plastic, ceramic, or other insulating material; or vice versa.

The first material portion 1534 may include a series of discrete wells positioned in a spaced arrangement about a radial circumference of the target 1532. The first material portions 1530 may be evenly spaced or spaced according to any type of pattern. Accordingly, when the magnetic field sensor 1502 is adjacent to one of the first material portions 1534, a reflected magnetic field will be generated and detected. When the magnetic field sensor 1502 is adjacent to an insulating region (e.g., region 1538), the insulating region 1538 does not generate a reflected magnetic field. Thus, as the target 1532 rotates relative to the magnetic field sensor 1502, the magnetic field sensing element of the magnetic field sensor 1502 can detect the reflected magnetic field generated by the first material portion 1534 and detect when no reflected magnetic field is generated due to the insulating region 1538. The detected magnetic field may be used to detect, for example, a rotational speed and/or a rotational direction of the magnetic target 1532.

Magnetic field sensor 1502 may be placed within the outermost radius of target 1532 and adjacent to substantially flat face 1540 of target 1532. In other words, if the target 1532 is placed at the end of the axis of rotation, the magnetic field sensor 1502 would be positioned adjacent to the face of one end of the axis. Thus, as the target 1532 rotates, the magnetic field sensing elements of the magnetic field sensor 1502 may detect the first material portion 1534 as it passes by.

Referring to fig. 15C, a system 1522 "may include a magnetic field sensor 1502 and a rotating target 1532. The target 1532 may include one or more first material portions 1534' and include a second material portion 1536. The first material portion 1534 may be a high conductivity material, such as a metal; while the second material portion 1536 may be a relatively low conductivity material such as plastic, ceramic, or other insulating material; or vice versa.

The first material portion 1534' may include several series of discrete wells positioned in a spaced arrangement around different radial circumferences of the target 1532. The first material portions 1530 may be evenly spaced or spaced according to any type of pattern. Accordingly, when the magnetic field sensor 1502 is adjacent to one of the first material portions 1534, a reflected magnetic field will be generated and can be detected. When the magnetic field sensor 1502 is adjacent to an insulating region (e.g., region 1538), the insulating region 1538 does not generate a reflected magnetic field. Thus, as the target 1532 rotates relative to the magnetic field sensor 1502, the magnetic field sensing element of the magnetic field sensor 1502 can detect the reflected magnetic field generated by the first material portion 1534 and detect when no reflected magnetic field is generated due to the insulating region 1538. The wells of the second radial series may be arranged such that each well 1560 of the second radial series is disposed adjacent to a gap 1562 between wells 1534 of the first radial series. As magnetic field sensor 1502 detects each radial series, there may be a 90 degree phase shift or a different pitch between the detections of the first radial series well and the second radial series well, which may be used to increase the accuracy of the angle in a Vernier type approximation.

Magnetic field sensor 1502 may be placed within the outermost radius of target 1532 and adjacent to substantially flat face 1540 of target 1532. In other words, if the target 1532 is placed at the end of the axis of rotation, the magnetic field sensor 1502 would be positioned adjacent to the face of one end of the axis. Thus, as the target 1532 rotates, the magnetic field sensing element of the magnetic field sensor 1502 detects the first material portion 1534 as it passes by.

Referring to FIG. 16, system 1600 may include a first magnetic field sensor 1602, a second magnetic field sensor 1604, and a rotating target 1606. Magnetic field sensors 1602 and 1604 may be the same or similar to magnetic field sensor 100 and/or any of the magnetic field sensors described above.

Target 1606 may include a helical ramp 1608 positioned about a central axis 1610. In an embodiment, the central axis 1610 may be a rotational axis. Target 1606 may further include a conductive reference portion 1612. The reference portion 1612 and the ramp 1608 may be formed of a conductive material.

In an embodiment, the magnetic field sensor 1602 may be positioned adjacent to the reference portion 1612. The coil of magnetic field sensor 1602 generates a magnetic field, which in turn generates eddy currents in reference portion 1612. The magnetic field sensor 1602 may detect a reflected magnetic field generated by eddy currents.

Similarly, magnetic field sensor 1604 may be positioned relative to ramp 1608. The coil of magnetic field sensor 1608 may generate a magnetic field, which in turn may generate eddy currents in a portion 1614 of the ramp adjacent to magnetic field sensor 1604. The magnetic field sensor 1604 may detect a reflected magnetic field generated by eddy currents in the ramp 1608.

As target 1606 rotates, portion 1614 of ramp 1608 adjacent to magnetic field sensor 1604 will move toward and/or away from magnetic field sensor 1604. The proximity D of the portion 1614 to the magnetic field sensor 1604 may be detected by the magnetic field sensor 1604. Processing circuitry (not shown) may correlate/translate the proximity D with the rotational angle of the target 1606 and determine position, rotational speed, rotational direction, etc.

Referring to FIG. 16A, a system 1600' can include a grid of magnetic field sensors 1616 and include a rotating target 1606.

Target 1606 may include a helical ramp 1608 positioned about a central axis 1610. In an embodiment, the central axis 1610 may be a rotational axis. Target 1606 may further include a conductive reference portion 1612. The reference portion 1612 and the ramp 1608 may be formed of a conductive material.

In an embodiment, the magnetic field sensors 1602 of the grid 1616 are positioned adjacent to the reference portion 1612. The coil of magnetic field sensor 1602 generates a magnetic field, which in turn generates eddy currents in reference portion 1612. The magnetic field sensor 1602 may detect a reflected magnetic field generated by eddy currents.

Other magnetic field sensors 1618a-h may be positioned on the grid 1616 in different locations relative to the ramp 1608. The coil of each magnetic field sensor 1618a-h may generate a magnetic field, which in turn may generate eddy currents in the portion of the ramp adjacent to each magnetic field sensor 1618a-h, each magnetic field sensor 1618a-h may each detect a local reflected magnetic field generated by the eddy currents in the ramp 1608.

As target 1606 rotates, portions of ramp 1608 adjacent to magnetic field sensors 1618a-h will move toward and/or away from magnetic field sensors 1618 a-h. The proximity D of any portion 1614 to any magnetic field sensor 1618a-h may be detected by each magnetic field sensor. Processing circuitry (not shown) may correlate/translate the proximity D with the rotational angle of the target 1606 and determine position, rotational speed, rotational direction, etc.

Referring to fig. 16A, a plurality of sensors 1618a-h forming a grid can also be used to measure the distance of the screw at different points so that it allows correction of the vibration of the screw in a direction perpendicular to the axis of rotation, while the center sensor of the grid dampens the vibration along the axis of rotation.

Referring to fig. 17, a substrate 1700 may support one or more of the magnetic field sensor circuits described above, the magnetic field sensor including a coil and a magnetic field sensing element. The substrate 1700 may be positioned on (and attached to) the frame 1702. The substrate 1700 may be a semiconductor substrate, a glass substrate, a ceramic substrate, or the like. Wire bonds 1704 may electrically couple connection pads on substrate 1700 to leads of frame 1702. The frame 1702 may be a leadframe, a (pad) frame, or any structure capable of supporting the substrate 1700.

In an embodiment, the substrate 1700 may support a coil 1701, which coil 1701 may be the same or similar to the coils described above. The coil 1701 may generate a magnetic field capable of inducing eddy currents and a reflected magnetic field in the target, and/or the coil 1701 may generate a magnetic field capable of being directly coupled to (e.g., directly detected by) the MR element. As shown, the coil 1701 may be positioned adjacent (or opposite) a gap 1703 in the frame 1702. If the frame 1702 is a conductive material (such as metal), the magnetic field generated by the coil 1701 may induce eddy currents and reflected fields from the frame 1702. Placing the coil 1701 near the gap 1703 may attenuate or eliminate any unwanted reflected fields that the frame 1702 might otherwise generate.

In fig. 17A, a substrate 1703 may support one or more of the magnetic field sensor circuits described above, including the coils and magnetic field sensing elements. Substrate 1706 may be positioned on (and attached to) leadframe 1707. The substrate 1706 may include one or more vias 1708 that may be coupled to solder balls (or pads) 1710. Solder balls 1710 may be coupled to leads of the leadframe 1707, providing electrical connections between the vias 1708 and the leads of the leadframe 1707. The electrical connections may couple the sensor circuitry (generally supported by one surface of the substrate 1700) to external systems and components through leads 1707.

In an embodiment, the substrate 1706 may support coils 1709, which may be the same or similar to the coils described above. The coil 1709 may generate a magnetic field capable of inducing eddy currents and a reflected magnetic field in the target, and/or the coil 1709 may generate a magnetic field capable of coupling directly to (e.g., being detected directly by) the MR element. As shown, the coil 1709 may be positioned adjacent (or opposite) a gap 1705 in the frame 1707. If the frame 1707 is a conductive material (e.g., metal), the magnetic field generated by the coil 1709 induces eddy currents and reflected fields from the frame 1707. Placing the coil 1709 near the gap 1705 may reduce or eliminate any unwanted reflected fields that the frame 1707 may otherwise generate.

In an embodiment, a grid of sensors 1608a-h in FIG. 16A can be formed on the surface of a substrate 1700 or 1706.

Referring to FIG. 18, magnetic field sensor circuit 1800 may be supported by one or more substrates. As shown in fig. 18, a first substrate 1802 can support one or more coils 1804, 1806 capable of generating a magnetic field. The second substrate 1808 may support one or more magnetic field sensing elements 1810 capable of detecting a reflected magnetic field as discussed above. The semiconductor dies 1802, 1808 may also include additional circuitry as discussed above. The circuitry supported by substrate 1802 may be coupled to the circuitry supported by substrate 1808 using lead wires (not shown). The supported circuitry may also be coupled to leads of frame 1811 by lead wires. A semiconductor package (not shown) may surround the substrate.

In an embodiment, the second die 1808 may be glued to the top surface of the first die 1802. Alternatively, the die 1808 may be flipped and electrically connected to the die 1802 with die-to-die (die-to-die) electrical connections.

The magnetic fields generated by the coils 1804 and 1808 cancel each other out in the region between the coils 1804 and 1806 (i.e., the region in which the MR element 1810 is located). Thus, the substrate 1808 may be positioned such that the MR element 1810 falls within the region of magnetic field cancellation to minimize any stray or directly coupled fields detected by the MR element 1810.

For example, substrates 1802 and 1808 may be different types of substrates. For example, substrate 1802 may be an inexpensive substrate for supporting metal traces, such as coils 1804 and 1806, and substrate 1808 may be a substrate for supporting MR elements and/or other integrated circuits.

Referring to FIG. 18A, magnetic field sensor circuit 1800' may be supported by a plurality of semiconductor dies. As shown, the first die 1812 may support two (or more) sets of coils. The first set of coils can include coils 1814 and 1816. The second set may include coils 1818 and 1820. The second die 1822 may support a first set of magnetic field sensing elements 1824, and the third die 1826 may support a second set of magnetic field sensing elements 1828.

In an embodiment, magnetic field sensor circuit 1800' may include two magnetic field sensors. The first sensor may include coils 1814 and 1816, die 1822, and magnetic field sensing element 1824. The second magnetic field sensor may include coils 1818 and 1820, a die 1826, and a magnetic field sensing element 1828. In other embodiments, magnetic field sensor circuit 1800' may include additional magnetic field sensors including additional coils, dies, and magnetic field sensing elements.

Magnetic field sensor circuit 1800' may be used in any of the systems described above that employ two (or more) magnetic field sensors. Additionally or alternatively, two magnetic field sensors in circuit 1800' may be driven at different frequencies to avoid cross-talk between the two sensors.

Referring to FIG. 19, magnetic field sensor circuit 1900 may be supported by a plurality of substrates. The first substrate may support the coil 1902. The four smaller substrates 1904 and 1910 may each support one or more magnetic field sensing elements. As shown, the substrate 1904 and 1910 can be positioned adjacent to the traces of the coil 1902. In some embodiments, the substrates 1904-1910 may be positioned such that the magnetic field sensing elements they support are disposed adjacent to the gaps 1912 between the traces of the coils 1902.

The fifth substrate 1914 may support circuitry for driving the coil 1902 and the magnetic field sensing elements and processing circuitry for processing signals received from the magnetic field sensing elements. The circuits on the different dies may be coupled together by the lead wires 1916.

Although not shown, in another embodiment, the larger substrate 1402 may support the coils and MR element. The smaller substrates 1904 and 1908 may support circuitry for driving the coils and MR element and/or circuitry for processing the magnetic field signals.

In an embodiment, the magnetic field sensing elements and coils 1902 may be the same as or similar to the magnetic field sensing elements (e.g., MR elements) and coils described in some or all of the magnetic field detection systems described above.

Having described preferred embodiments for illustrating the various concepts, structures and techniques of the inventive subject matter, it will now become apparent to those of ordinary skill in the art that other embodiments incorporating such concepts, structures and techniques may be used. Accordingly, it is claimed that the scope of the patent should not be limited to the described embodiments, but should be defined only by the spirit and scope of the appended claims. All references cited herein are hereby incorporated by reference in their entirety.