阅读说明：本技术 具有增大的操作范围的磁阻元件 (Magnetoresistive element with increased operating range ) 是由 P·康皮戈里欧 J·伊根 于 2018-04-19 设计创作，主要内容包括：沉积在衬底上的磁阻元件包括具有相对的第一表面和第二表面并且包括第一多个层的第一堆叠部分。所述第一堆叠部分具有对应于第一磁场强度范围内的外加磁场的第一基本上线性的响应。所述磁阻元件还包括具有相对的第一表面和第二表面并且包括第二多个层的第二堆叠部分。第二堆叠部分的第一表面设置在第一堆叠部分的第二表面之上,并且第二堆叠部分具有不同于第一基本上线性的响应的第二基本上线性的响应。第二基本上线性的响应对应于第二磁场强度范围内的外加磁场。(A magnetoresistive element deposited on a substrate includes a first stack portion having opposing first and second surfaces and including a first plurality of layers. The first stacked portion has a first substantially linear response to an externally applied magnetic field within a first range of magnetic field strengths. The magnetoresistive element further includes a second stack portion having opposing first and second surfaces and including a second plurality of layers. The first surface of the second stack portion is disposed above the second surface of the first stack portion, and the second stack portion has a second substantially linear response different from the first substantially linear response. The second substantially linear response corresponds to the externally applied magnetic field within a second magnetic field strength range.)

1. A magnetoresistive element deposited on a substrate, comprising:

a first stack portion having opposing first and second surfaces and comprising a first plurality of layers, the first stack portion having a first substantially linear response to an externally applied magnetic field within a first magnetic field strength range; and

a second stack portion having opposing first and second surfaces and comprising a second plurality of layers, wherein the first surface of the second stack portion is disposed above the second surface of the first stack portion and the second stack portion has a second substantially linear response different from the first substantially linear response, the second substantially linear response corresponding to the externally applied magnetic field within a second range of magnetic field strengths.

2. The magnetoresistive element of claim 1, wherein the first substantially linear response of the first stack portion is such that the magnetoresistive element has a first level of sensitivity to magnetic field strength changes when the externally applied magnetic field is within the first range of magnetic field strengths.

3. The magnetoresistive element of claim 2, wherein the second substantially linear response of the second stack portion is such that the magnetoresistive element has a reduced second level of sensitivity to magnetic field strength changes when the externally applied magnetic field is within the second range of magnetic field strengths as compared to the first level of sensitivity.

4. The magnetoresistive element according to claim 1, wherein the first magnetic field strength range comprises a negative magnetic field.

5. The magnetoresistive element according to claim 1, wherein the second magnetic field strength range comprises a positive magnetic field.

6. The magnetoresistive element of claim 1, wherein the first magnetic field strength range overlaps one or more portions of the second magnetic field strength range.

7. The magnetoresistive element according to claim 1, wherein each of the layers of the first stack portion has a respective thickness, and the thickness of at least one of the layers of the first stack portion is selected such that the first stack portion has the first substantially linear response.

8. The magnetoresistive element according to claim 1, wherein each of the layers of the second stack portion has a respective thickness, and the thickness of at least one of the layers of the second stack portion is selected such that the second stack portion has the second substantially linear response.

9. The magnetoresistive element according to claim 1, wherein an ordering of the first plurality of layers in the first stack portion is selected such that the first stack portion has the first substantially linear response, and wherein an ordering of the second plurality of layers in the second stack portion is selected such that the second stack portion has the second substantially linear response.

10. The magnetoresistive element according to claim 1, wherein the first and second plurality of layers comprise the same number of layers.

11. The magnetoresistive element according to claim 1, wherein the first and second plurality of layers comprise a different number of layers.

12. The magnetoresistive element according to claim 1, wherein the first stack portion includes: a first pinning layer structure; a first spacer layer disposed over the first pinning layer structure; and a first free layer structure disposed over the first spacer layer, wherein the first spacer layer is comprised of a first material having a first thickness, the first material and the first thickness being selected such that the first stacked portion has the first substantially linear response.

13. The magnetoresistive element according to claim 12, wherein the second stack portion includes: a second pinning layer structure; a second spacer layer disposed over the second pinning layer structure; and a second free layer structure disposed over the second spacer layer, wherein the second spacer layer is comprised of a second material having a second thickness, the second material and the second thickness selected such that the second stack portion has the second substantially linear response.

14. The magnetoresistive element according to claim 13, wherein the first spacer layer and the second spacer layer are composed of ruthenium (Ru).

15. The magnetoresistive element of claim 14, wherein the second selected thickness of the second spacer layer is in a range between about 1.6 nanometers (nm) to about 1.8nm, about 2.2nm to about 2.4nm, about 2.9nm to about 3.1nm, or about 3.5nm to about 3.7 nm.

16. The magnetoresistive element of claim 14, wherein the first selected thickness of the first spacer layer is approximately 1.3nm, and wherein the second selected thickness of the second spacer layer is approximately 1.7 nm.

17. The magnetoresistive element of claim 13, wherein the first pinned layer structure and the second pinned layer structure include one respective pinned layer.

18. The magnetoresistive element of claim 13, wherein the first pinned layer structure and the second pinned layer structure each include a respective Synthetic Antiferromagnetic (SAF) structure.

19. The magnetoresistive element according to claim 1, wherein the magnetoresistive element is one of a Giant Magnetoresistive (GMR) element, a Magnetic Tunnel Junction (MTJ) element, and a Tunnel Magnetoresistive (TMR) element.

20. Magnetoresistive element according to claim 1, wherein the magnetoresistive element is provided in a magnetic field sensor.

21. A magnetic field sensor, comprising:

a magnetoresistive element configured to generate a first substantially linear response and a second substantially linear response to an applied magnetic field, wherein the first substantially linear response and the second substantially linear response have an offset of about zero relative to an expected response of the magnetoresistive element at an applied magnetic field strength of about zero oersteds.

22. A magnetic field sensor, comprising:

means for generating a first substantially linear response and a second substantially linear response to an externally applied magnetic field, wherein the first substantially linear response and the second substantially linear response have an offset of about zero relative to an expected response at an externally applied magnetic field strength of about zero oersted.

23. The magnetic field sensor of claim 22, wherein the means for generating the first and second substantially linear responses is a magnetoresistive element, and the expected response is an expected response of the magnetoresistive element.

24. The magnetic field sensor of claim 23, wherein the magnetoresistive element comprises:

a first stacked portion having opposing first and second surfaces and including a first plurality of layers; and

a second stack portion having opposing first and second surfaces and comprising a second plurality of layers, wherein the first surface of the second stack portion is disposed above the second surface of the first stack portion, and the first stack portion has the first substantially linear response and the second stack portion has the second substantially linear response.

25. The magnetic field sensor of claim 24, wherein the second substantially linear response is different from the first substantially linear response, and wherein the first substantially linear response corresponds to the externally applied magnetic field within a first range of magnetic field strengths and the second substantially linear response corresponds to the externally applied magnetic field within a second range of magnetic field strengths.