阅读说明：本技术 一种紫外探测器 (Ultraviolet detector ) 是由 周幸叶 吕元杰 王元刚 谭鑫 韩婷婷 李佳 梁士雄 冯志红 于 2019-09-29 设计创作，主要内容包括：本发明适用于半导体技术领域,提供了一种紫外探测器,所述紫外探测器包括：隔离台面,所述隔离台面包括侧壁为倾斜结构的上部分和侧壁为垂直结构的下部分。其中,所述上部分包括所述紫外探测器的全部的欧姆接触层,所述上部分的最大横截面的直径不大于所述下部分的横截面的直径；其中,所述上部分的纵向剖面为梯形,该梯形的下内角为锐角。本发明能够有效地抑制紫外探测器的侧壁表面的提前击穿,同时提高芯片的填充因子,节约成本。(The invention is suitable for the technical field of semiconductors, and provides an ultraviolet detector, which comprises: the isolation mesa includes an upper portion whose sidewall is an inclined structure and a lower portion whose sidewall is a vertical structure. Wherein the upper portion includes all of the ohmic contact layers of the ultraviolet detector, a diameter of a maximum cross-section of the upper portion is not greater than a diameter of a cross-section of the lower portion; wherein, the longitudinal section of the upper part is trapezoidal, and the lower internal angle of the trapezoid is an acute angle. The invention can effectively inhibit the advanced breakdown of the side wall surface of the ultraviolet detector, simultaneously improve the filling factor of the chip and save the cost.)

1. An ultraviolet detector is characterized by comprising an isolation table top, wherein the isolation table top comprises an upper part with an inclined side wall and a lower part with a vertical side wall;

wherein the upper portion includes all of the ohmic contact layers of the ultraviolet detector, a diameter of a maximum cross-section of the upper portion is not greater than a diameter of a cross-section of the lower portion;

wherein, the longitudinal section of the upper part is trapezoidal, and the lower internal angle of the trapezoid is an acute angle.

2. The ultraviolet detector of claim 1, wherein the junction of the upper portion and the lower portion coincides with a top surface of the lower portion.

3. The ultraviolet detector of claim 1, wherein the junction of the upper portion and the lower portion is located inside a top surface of the lower portion.

4. The ultraviolet detector of claim 1, wherein the lower interior angle is 2 ° to 15 °.

5. The ultraviolet detector of claim 1, further comprising a passivation layer and an upper metal electrode disposed on an upper surface of the upper portion;

the passivation layer covers a region on an outer surface of the upper portion except for the upper metal electrode, and the passivation layer covers an outer surface of the lower portion.

6. The UV detector of any one of claims 1-5, wherein said isolation mesa comprises an ohmic contact layer and an absorption multiplying layer in sequence from top to bottom, and said upper portion further comprises a portion of said absorption multiplying layer.

7. The UV detector of any one of claims 1-5, wherein said isolation mesa comprises an ohmic contact layer, a multiplication layer and an absorption layer in sequence from top to bottom, and said upper portion further comprises all of said multiplication layer and a portion of said absorption layer.

8. The UV detector of any one of claims 1-5, wherein said isolation mesa comprises an ohmic contact layer, a multiplication layer, a charge layer, and an absorption layer in sequence from top to bottom, and said upper portion further comprises all of said multiplication layer, all of said charge layer, and a portion of said absorption layer.

9. An ultraviolet detector array, characterized in that the ultraviolet detector array comprises more than two ultraviolet detectors as claimed in any of the preceding claims 1 to 8.

10. A preparation method of an ultraviolet detector is characterized by comprising the following steps:

preparing a semiconductor epitaxial wafer, wherein the semiconductor epitaxial wafer comprises a vertical table-board;

coating photoresist on the outer surface of the upper part of the vertical table top, and carrying out photoetching and developing to pattern the photoresist;

heating the patterned photoresist to enable the patterned photoresist to reflow to form an inclined side wall;

etching the epitaxial wafer with the inclined sidewall patterned photoresist to form an inclined mesa at an upper portion of the vertical mesa, wherein the inclined mesa includes all of the ohmic contact layers of the ultraviolet detector, and a diameter of a maximum cross section of the inclined mesa is not greater than a diameter of a cross section of the vertical mesa;

the longitudinal section of the inclined table top is trapezoidal, and the lower internal angle of the trapezoidal shape is an acute angle.