Implant system, microelectrode module and dielectrophoresis method
阅读说明：本技术 种植体系统、微电极模块及介电泳方法 (Implant system, microelectrode module and dielectrophoresis method ) 是由 屈治国 孙帼 任秦龙 李昂 于 2019-09-24 设计创作，主要内容包括：公开了种植体系统、微电极模块及介电泳方法,系统中,绝缘种植体主体配置成可植入牙槽骨,所述绝缘种植体主体包括颈部和根部,所述绝缘种植体主体设有从所述颈部向所述根部方向开通的植入孔,微电极模块配置成在所述绝缘种植体主体周围生成不均匀电场,所述微电极模块包括第一正电极、第二正电极和负电极,第一正电极设置于所述颈部,第二正电极设置于所述颈部,负电极设置于所述根部,第一正电极和第二正电极与所述负电极生成不均匀电场。(An implant system, a microelectrode module and a dielectrophoresis method are disclosed, in which system, an insulating implant body is configured to be implantable into an alveolar bone, the insulating implant body comprises a neck portion and a root portion, the insulating implant body is provided with an implantation hole opening from the neck portion in a direction towards the root portion, the microelectrode module is configured to generate an uneven electric field around the insulating implant body, the microelectrode module comprises a first positive electrode, a second positive electrode and a negative electrode, the first positive electrode is arranged at the neck portion, the second positive electrode is arranged at the neck portion, the negative electrode is arranged at the root portion, and the first positive electrode, the second positive electrode and the negative electrode generate an uneven electric field.)
1. An implant system, comprising,
an insulating implant body configured to be implantable into an alveolar bone, the insulating implant body including a neck portion and a root portion, the insulating implant body being provided with an implantation hole opened from the neck portion toward the root portion,
a microelectrode module configured to generate a non-uniform electric field around the insulative implant body, the microelectrode module comprising,
a first positive electrode disposed at the neck,
a second positive electrode disposed at the neck,
a negative electrode disposed at the root, the first and second positive electrodes and the negative electrode generating a non-uniform electric field.
2. The implant system according to claim 1, wherein preferably the first positive electrode and the second positive electrode arranged at the neck are symmetrically distributed along the diameter of the insulating implant body, and the negative electrode is located at the center of the root.
3. The implant system of claim 1, wherein said insulative implant body is a porous structure.
4. The implant system of claim 1, wherein the insulative implant body is a microcentre structure, and the first positive electrode, second positive electrode, and/or the negative electrode is Si3N4A microelectrode which is formed by plating materials on the insulation implant body through a plasma enhanced chemical vapor deposition method.
5. The implant system of claim 1, wherein the insulative implant body is formed from hydroxyapatite or a bioceramic material via additive manufacturing, the insulative implant body having a diameter of 3.1mm-5.6mm and a height of 6mm-10mm, the first positive electrode and the second positive electrode being no less than 1mm from a top edge of the insulative implant body.
6. The implant system of claim 1, wherein the implant hole is located inside the insulative implant body coaxially with the diameter of the insulative implant body, the implant hole has a diameter of 1mm-3mm and a hole depth of 2mm-5mm, the outer surface of the insulative implant body is provided with a thread including a square thread, a V-shaped thread, a buttress thread, and a helical thread, the thread pitch is 0.75mm-2mm, and the thread depth is 0.5mm-2 mm.
7. The implant system of claim 1 wherein said microelectrode module comprises a dc power supply having a voltage in the range of 1-5V.
8. The implant system according to claim 1, wherein the microelectrode module comprises a processing unit for controlling the inhomogeneous electric field and a wireless communication device for wireless connection to a mobile terminal, the processing unit comprising a digital signal processor, an application specific integrated circuit ASIC or a field programmable gate array FPGA, the wireless communication device comprising at least a wireless local area network communication device comprising a bluetooth, ZigBee and/or Wi-Fi module and/or a mobile communication network device comprising a 2G wireless communication chip, a 3G wireless communication chip and/or a 4G wireless communication chip, the mobile terminal comprising a cell phone, pad or personal digital terminal.
9. A dielectrophoretic method of the implant system of any of claims 1 to 8, comprising the steps of,
the first step, setting the insulation implant body at a predetermined position,
and a second step, generating an uneven electric field by the first positive electrode, the second positive electrode and the negative electrode, and adjusting the voltage value and action time of the uneven electric field based on the particle size parameters of the particles in the liquid to form dielectrophoresis.
10. A microelectrode module for an insulating implant, comprising:
a first positive electrode disposed at the neck of the insulating implant,
a second positive electrode disposed at a neck of the insulating implant,
and the negative electrode is arranged at the root of the insulating implant, and the first positive electrode, the second positive electrode and the negative electrode generate uneven electric fields.
Technical Field
The invention relates to the technical field of dielectrophoresis, in particular to an implant system, a microelectrode module and a dielectrophoresis method.
Background
The implant restoration is a restoration method that titanium or titanium alloy implant with good tissue compatibility is implanted into alveolar bone of an edentulous area, and is connected with an upper dental crown restoration body through an abutment after the implant is combined with the alveolar bone, so that the implant restoration has the advantages of no harm to residual teeth, good retention stability, high chewing efficiency and small foreign body sensation, is known as a third pair of human teeth, and gradually replaces the traditional restoration technology to become a preferred treatment scheme for dentition defect and dentition defect. In 2017, the number of planting and repairing operations in China reaches 120 thousands, and the market demand is huge. At present, the optimization improvement of the surface roughness, the surface morphology, the surface chemical composition, the surface free energy and the hydrophilicity of the implant material is commonly used for improving the osseointegration capability, but the effect is not good enough, and the osseointegration period is still as long as 3-6 months. The enrichment and adhesion of platelets on the surface of the implant is a prerequisite for the formation of rapid, continuous osseointegration. Therefore, it is important to find an efficient, safe and active method for promoting the enrichment of platelets on the surface of an implant.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide an implant system, a micro-electrode module and a dielectrophoresis method for overcoming the above drawbacks of the prior art, which can construct a non-uniform electric field on the surface of an insulating implant and implement dielectrophoresis using dielectrophoresis. The purpose of the invention is realized by the following technical scheme.
An implant system includes a plurality of implant components,
an insulating implant body configured to be implantable into an alveolar bone, the insulating implant body including a neck portion and a root portion, the insulating implant body being provided with an implantation hole opened from the neck portion toward the root portion,
a microelectrode module configured to generate a non-uniform electric field around the insulative implant body, the microelectrode module comprising,
a first positive electrode disposed at the neck,
a second positive electrode disposed at the neck,
a negative electrode disposed at the root, the first and second positive electrodes and the negative electrode generating a non-uniform electric field.
In the implant system, the dielectric force of the particles subjected to the non-uniform electric field is as follows:
In the implant system, a first positive electrode and a second positive electrode which are arranged on the neck are symmetrically distributed along the diameter of the insulating implant body, and a negative electrode is positioned in the center of the root.
In the implant system, the insulating implant body is a porous structure, and the porosity of the insulating implant body is in the range of 0.005-0.2.
In the implant system, the insulating implant body is a micro-cone structure, and the first positive electrode, the second positive electrode and/or the negative electrode is Si3N4The material is a microelectrode plated on the insulating implant body by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
In the implant system, an insulating implant main body is formed by hydroxyapatite or biological ceramic materials through additive manufacturing, the diameter of the insulating implant main body is 3.1-5.6 mm, the height of the insulating implant main body is 6-10 mm, and the distance between a first positive electrode and a second positive electrode and the top edge of the insulating implant main body is not less than 1 mm.
In the implant system, the implantation hole is positioned in the insulating implant main body and coaxial with the diameter of the insulating implant main body, the diameter of the implantation hole is 1mm-3mm, the hole depth is 2mm-5mm, the outer surface of the insulating implant main body is provided with threads, the threads comprise square threads, V-shaped threads, buttress threads and spiral threads, the thread pitch is 0.75mm-2mm, and the thread depth is 0.5mm-2 mm.
In the implant system, the microelectrode module comprises a direct current power supply, the voltage range of the direct current power supply is 1-5V, and the continuous discharge time exceeds 12 hours.
In the implant system, the microelectrode module comprises a processing unit for controlling the uneven electric field and a wireless communication device in wireless connection with a mobile terminal, the processing unit comprises a digital signal processor, an Application Specific Integrated Circuit (ASIC) or a Field Programmable Gate Array (FPGA), the wireless communication device at least comprises a wireless local area network communication device and/or a mobile communication network device, the wireless local area network communication device comprises a Bluetooth module, a ZigBee module and/or a Wi-Fi module, the mobile communication network device comprises a 2G wireless communication chip, a 3G wireless communication chip and/or a 4G wireless communication chip, and the mobile terminal comprises a mobile phone, a pad or a personal digital terminal.
According to another aspect of the present invention, a dielectrophoresis method of the implant system comprises the steps of,
the first step, setting the insulation implant body at a predetermined position,
and a second step, generating an uneven electric field by the first positive electrode, the second positive electrode and the negative electrode, and adjusting the voltage value and action time of the uneven electric field based on the particle size parameters of the particles in the liquid to form dielectrophoresis.
According to still another aspect of the present invention, a microelectrode module for an insulation implant includes:
a first positive electrode disposed at the neck of the insulating implant,
a second positive electrode disposed at a neck of the insulating implant,
and the negative electrode is arranged at the root of the insulating implant, and the first positive electrode, the second positive electrode and the negative electrode generate uneven electric fields.
Compared with the prior art, the invention has the beneficial effects that:
the implant system of the invention can accelerate the particle enrichment effect, for example, the diffusion behavior of blood platelets in blood is actively regulated within 12 hours after the implant is implanted, and the voltage value and the action time are set according to the particle size difference between the blood platelets and red blood cells in the blood. The electric field formed by the positive electrode and the negative electrode is unevenly distributed in the porous structure of the insulating implant main body, the electric field lines close to the surface of the porous structure of the implant main body are dense, and the electric field intensity is high; the electric field lines in the blood far away from the implant body are sparse, and the electric field intensity is weakened. Both platelets and red blood cells are subjected to negative dielectrophoretic forces. Because the particle size of the red blood cells is about 3 times of that of the platelets, the negative dielectrophoresis force of the red blood cells is larger and about 9 times of that of the platelets, the red blood cells migrate to a porous structure far away from the implant; and the dielectrophoresis force of the platelets is smaller than the electric heating flow drag force, the platelets migrate to the porous structure of the implant, the platelet enrichment on the surface of the porous structure of the implant is realized, the adhesion effect of the platelets is promoted, the bone union time is further shortened, and the bone union rate is optimized. The voltage used in the invention has biological safety, actively regulates and controls the biological process, and has high efficiency. The voltage and action time used in the dielectrophoresis platelet enrichment promotion implant system can be accurately regulated and controlled according to the blood characteristic parameters (erythrocyte distribution width and blood viscosity) of a patient, so that the individualized and accurate regulation and control of platelet enrichment are realized.
The above description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly apparent, and to make the implementation of the content of the description possible for those skilled in the art, and to make the above and other objects, features and advantages of the present invention more obvious, the following description is given by way of example of the specific embodiments of the present invention.
Drawings
Various other advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. It is obvious that the drawings described below are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. Also, like parts are designated by like reference numerals throughout the drawings.
In the drawings:
figure 1 is a schematic structural view of an implant system according to one embodiment of the present invention;
figure 2 is a schematic step diagram of a dielectrophoresis method according to one embodiment of the invention.
The invention is further explained below with reference to the figures and examples.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to fig. 1 to 2. While specific embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
It should be noted that certain terms are used throughout the description and claims to refer to particular components. As one skilled in the art will appreciate, various names may be used to refer to a component. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. The description which follows is a preferred embodiment of the invention, but is made for the purpose of illustrating the general principles of the invention and not for the purpose of limiting the scope of the invention. The scope of the present invention is defined by the appended claims.
For the purpose of facilitating understanding of the embodiments of the present invention, the following description will be made by taking specific embodiments as examples with reference to the accompanying drawings, and the drawings are not to be construed as limiting the embodiments of the present invention.
For a better understanding, as shown in fig. 1, an implant system includes,
an
a microelectrode module configured to generate a non-uniform electric field around the insulating
a first
a second
and a
For the purpose of facilitating an understanding of the embodiments of the present invention, the following detailed description will be given by way of example with reference to the accompanying drawings, which are not intended to limit the embodiments of the present invention.
For better understanding, a dielectrophoresis platelet-enriching implant system comprises an insulating
Specifically, an implant cavity matched with the size of the implant main body is prepared in the alveolar bone of the edentulous area, and the implant cavity is washed by normal saline. The carrying head is inserted into the insulating implant implantation hole, the insulating implant main body is rotationally implanted into the implantation hole, blood infiltrates into a gap between the implant porous structure and the alveolar bone along the surface of the thread structure, and the implant has initial stability and is not easy to separate.
Specifically, the
Specifically, the platelet conductivity is σ10.25S/m, a dielectric constant of 50, and a size of 2-3 μm; red blood cell conductivity of sigma10.31S/m, a dielectric constant of 59, and a size of 6-9 μm; the dynamic viscosity of blood was 0.005 pas.
According to the formula (1), in the same solution, the dielectric force applied to the particles is related to the electric field gradient, the morphology of the particles themselves, the electrical parameters, and the electrical parameters of the solution.
Wherein FDEPFor dielectric power, R represents the radius of the platelet and is a particle morphology parameter,. epsilonmIs the relative dielectric constant of the solution. f. ofCMIs a dielectric polarization factor, which comprises the dielectric constant and conductivity of the solution, the dielectric constant and conductivity of the particles, which are complex numbers, Re represents the real part of Re, E represents the electric field, and the gradient is solved.
Specifically, the action time of the microelectrode is 12 hours after implantation, the action time can be properly shortened or prolonged according to the blood viscosity of a patient reagent and the distribution width of red blood cells, and the number of the microelectrodes is correspondingly reduced or increased so as to meet the actual enrichment requirement.
Compared with the prior art, the invention realizes the enrichment effect of platelets on the surface of the implant by combining the dielectrophoresis technology, improves the bone union speed to the maximum extent and actively, shortens the bone union time and the implantation process, and can be widely applied to the field of oral implantation repair.
In a preferred embodiment of the implant system, the dielectrophoretic force of the particles subjected to the non-uniform electric field is:
In the preferred embodiment of the implant system, the first
In a preferred embodiment of the implant system, the insulating
In a preferred embodiment of the implant system, the insulating
In a preferred embodiment of said implant system, the insulating
In the preferred embodiment of the implant system, the
In a preferred embodiment of the implant system, the microelectrode module comprises a DC power supply, the voltage of the DC power supply is in a range of 1-5V, and the discharge duration exceeds 12 hours.
In a preferred embodiment of the implant system, the microelectrode module comprises a processing unit for controlling the inhomogeneous electric field and a wireless communication device wirelessly connected with a mobile terminal, the processing unit comprises a digital signal processor, an application specific integrated circuit ASIC or a field programmable gate array FPGA, the wireless communication device at least comprises a wireless local area network communication device and/or a mobile communication network device, the wireless local area network communication device comprises a bluetooth module, a ZigBee module and/or a Wi-Fi module, the mobile communication network device comprises a 2G wireless communication chip, a 3G wireless communication chip and/or a 4G wireless communication chip, and the mobile terminal comprises a mobile phone, a pad or a personal digital terminal.
In a preferred embodiment of the implant system, the implant system comprises an insulating implant body and a microelectrode module.
In a preferred embodiment of the implant system, the insulating implant body is a micro-cone structure, and the implant body is made of: hydroxyapatite or bioceramic material. And printing the main body structure of the implant by using an additive manufacturing method, wherein the diameter of the main body of the implant is 3.1-5.6 mm, and the height of the implant is 6-10 mm. The main body of the implant is a porous structure, and the porosity of the main body is in the range of 0.005-0.2. Comprises an
In the preferred embodiment of the implant system, the surface of the
In a preferred embodiment of the implant system, the implant holes 2 include an implant hole opening from the neck portion to the root portion, the hole diameter is 1mm-3mm, and the hole depth is 2mm-5 mm.
In a preferred embodiment of the implant system, the microelectrode modules are located at the top and bottom of the
In the preferred embodiment of the implant system, the power supply is a direct current power supply, the voltage range is 1-5V, and the implant system has biosafety.
As shown in fig. 2, a dielectrophoresis method of the implant system includes the steps of,
a first step S1, of disposing the
in the second step S2, the first
The liquid comprises blood. But not limited thereto, e.g. providing the implant in other environments, the non-uniform electric field is generated based on size parameters of particles of the liquid surrounding the implant.
A certain voltage is applied to the micro-electrode to generate a non-uniform electric field, and the micro-nano particles in the solution are efficiently, accurately and quickly manipulated and separated through the dielectrophoresis effect of the generated non-uniform electric field on the particles. For example, an uneven electric field is generated in blood around the insulated implant, dielectrophoresis is generated according to the difference of morphological parameters of platelets and red blood cell particles, the concentration of the platelets on the surface of the insulated implant is actively regulated and controlled by means of dielectric force, the osseointegration speed is improved to the maximum extent, the osseointegration time is shortened, and the design and development of the implant with better osseointegration capability and shorter operation process are facilitated.
A microelectrode module for an insulation implant of the present invention includes:
a first positive electrode disposed at the neck of the insulating implant,
a second positive electrode disposed at a neck of the insulating implant,
and the negative electrode is arranged at the root of the insulating implant, and the first positive electrode, the second positive electrode and the negative electrode generate uneven electric fields.
Further, the second positive electrode is arranged opposite to the first positive electrode.
Industrial applicability
The implant system, the microelectrode module and the dielectrophoresis method can be manufactured and used in the field of dielectrophoresis.
The foregoing describes the general principles of the present application in conjunction with specific embodiments, however, it is noted that the advantages, effects, etc. mentioned in the present application are merely examples and are not limiting, and they should not be considered essential to the various embodiments of the present application. Furthermore, the foregoing disclosure of specific details is for the purpose of illustration and description and is not intended to be limiting, since the foregoing disclosure is not intended to be exhaustive or to limit the disclosure to the precise details disclosed.
The foregoing description has been presented for purposes of illustration and description. Furthermore, the description is not intended to limit embodiments of the application to the form disclosed herein. While a number of example aspects and embodiments have been discussed above, those of skill in the art will recognize certain variations, modifications, alterations, additions and sub-combinations thereof.
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