阅读说明：本技术 一种硅料的检测方法 (Detection method of silicon material ) 是由 刘卿 何亮 陈欣文 于 2019-10-17 设计创作，主要内容包括：本发明提供了一种硅料的检测方法,用于同时检测不同批次的硅料,包括：提供多个坩埚,将待检测的所述不同批次的硅料分别盛放于所述多个坩埚中；将盛放有所述硅料的多个所述坩埚置于同一铸锭炉中铸锭；将铸锭后每一所述坩埚制得的硅锭进行检测,将所述硅锭的检测参数与预设参数比较,确定所述硅锭对应的所述硅料的合格程度,所述预设参数包括预设硅锭少子寿命值和预设硅锭电阻率值中的至少一种。通过将多个坩埚同时置于同一铸锭炉中,对不同批次的硅料进行同时铸锭,检测制得的硅锭进而判断硅料是否合格；该方法可以一次性检测多个批次的硅料,减少检测时间,且检测方法简单快速,降低检测成本,加快硅料质量的检测,有利于降低硅锭的制备成本。(The invention provides a detection method of a silicon material, which is used for simultaneously detecting silicon materials of different batches and comprises the following steps: providing a plurality of crucibles, and respectively placing the silicon materials to be detected in different batches into the plurality of crucibles; placing a plurality of crucibles containing the silicon material in the same ingot furnace for ingot casting; and detecting the silicon ingot prepared by each crucible after ingot casting, comparing the detection parameters of the silicon ingot with preset parameters, and determining the qualification degree of the silicon material corresponding to the silicon ingot, wherein the preset parameters comprise at least one of a preset silicon ingot minority carrier lifetime value and a preset silicon ingot resistivity value. Simultaneously casting ingots of silicon materials of different batches by simultaneously placing a plurality of crucibles in the same ingot furnace, and detecting the prepared silicon ingot to judge whether the silicon materials are qualified or not; the method can detect a plurality of batches of silicon materials at one time, reduces the detection time, is simple and quick, reduces the detection cost, accelerates the detection of the quality of the silicon materials, and is beneficial to reducing the preparation cost of silicon ingots.)

1. A detection method of silicon materials is used for simultaneously detecting silicon materials of different batches, and is characterized by comprising the following steps:

providing a plurality of crucibles, and respectively placing the silicon materials to be detected in different batches into the plurality of crucibles;

placing a plurality of crucibles containing the silicon material in the same ingot furnace for ingot casting;

and detecting the silicon ingot prepared by each crucible after ingot casting, comparing the detection parameters of the silicon ingot with preset parameters, and determining the qualification degree of the silicon material corresponding to the silicon ingot, wherein the preset parameters comprise at least one of a preset silicon ingot minority carrier lifetime value and a preset silicon ingot resistivity value.

2. The method for detecting a silicon material as claimed in claim 1, wherein a plurality of said crucibles are arranged in an array.

3. The method for detecting silicon material according to claim 1, wherein a plurality of the crucibles are stacked.

4. The method for detecting the silicon material as claimed in claim 1, wherein the ingot furnace is a G6 ingot furnace, and the crucible has a length of 173mm, a width of 173mm, a height of 290mm and a wall thickness of 10 mm.

5. The method for detecting the silicon material as claimed in claim 4, wherein the number of the crucibles is 72, and the crucibles are distributed in the ingot furnace in a 6 x 6 manner and stacked in two layers.

6. The method for detecting the silicon material as claimed in claim 1, wherein the step of comparing the detection parameter of the silicon ingot with a preset parameter to determine the qualification degree of the silicon material corresponding to the silicon ingot comprises the steps of:

when the detection parameter of the silicon ingot is greater than or equal to the preset parameter, the silicon material corresponding to the silicon ingot is qualified;

and when the detection parameter of the silicon ingot is smaller than the preset parameter, the silicon material corresponding to the silicon ingot is unqualified.

7. The method for detecting silicon material according to claim 1, wherein the average value of minority carrier lifetime of the predetermined silicon ingot is 1 μ s, and the average value of resistivity of the predetermined silicon ingot is 0.2 Ω.

8. The method for detecting silicon material as claimed in claim 1, wherein adjacent crucibles are separated by a carbon-carbon plate.

9. The method for detecting the silicon material as claimed in claim 1, wherein the crucible is spaced from the ingot furnace by a graphite plate.

10. The method for detecting a silicon material as claimed in claim 1, wherein a plurality of said crucibles form a crucible area, and said crucible area is provided with a carbon cover plate on one side in the opening direction of said crucibles.